CN106653600A - GPP chip electrophoresis fabrication process - Google Patents
GPP chip electrophoresis fabrication process Download PDFInfo
- Publication number
- CN106653600A CN106653600A CN201611218647.7A CN201611218647A CN106653600A CN 106653600 A CN106653600 A CN 106653600A CN 201611218647 A CN201611218647 A CN 201611218647A CN 106653600 A CN106653600 A CN 106653600A
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- Prior art keywords
- chip
- cleaning
- gpp
- silicon chip
- manufacture craft
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- GVVPGTZRZFNKDS-JXMROGBWSA-N geranyl diphosphate Chemical compound CC(C)=CCC\C(C)=C\CO[P@](O)(=O)OP(O)(O)=O GVVPGTZRZFNKDS-JXMROGBWSA-N 0.000 title claims abstract description 33
- 238000001962 electrophoresis Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 53
- 239000010703 silicon Substances 0.000 claims abstract description 53
- 238000004140 cleaning Methods 0.000 claims abstract description 33
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 28
- 239000011574 phosphorus Substances 0.000 claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000002253 acid Substances 0.000 claims abstract description 17
- 229910052796 boron Inorganic materials 0.000 claims abstract description 17
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 238000005488 sandblasting Methods 0.000 claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 12
- 239000011521 glass Substances 0.000 claims abstract description 10
- 239000012459 cleaning agent Substances 0.000 claims abstract description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 24
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 239000000725 suspension Substances 0.000 claims description 12
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 8
- 229920002301 cellulose acetate Polymers 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 239000003792 electrolyte Substances 0.000 claims description 7
- 238000002604 ultrasonography Methods 0.000 claims description 6
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 4
- 239000000428 dust Substances 0.000 claims description 4
- 238000007654 immersion Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000005416 organic matter Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005868 electrolysis reaction Methods 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract 6
- 230000008021 deposition Effects 0.000 abstract 2
- 238000001035 drying Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 239000002609 medium Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Dicing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a GPP chip electrophoresis fabrication process. The fabrication process comprises the steps of manufacturing material selection, silicon wafer cleaning, phosphorus deposition in advance, boron diffusion, double-sided sandblasting to remove an oxide layer, passivation protection, glass passivation, rinsing and scribing, wherein in the step of manufacturing material selection, N-type straight-pull monocrystalline silicon is used, and an original silicon wafer with a thickness about 270+/-10 micrometers is selected; in the step of silicon wafer cleaning, the silicon wafer is cleaned in a cleaning groove or an ultrasonic cleaner with a mixed acid, a cleaning agent and pure water, and a surface of the silicon wafer is clean and dried by using a drying machine after cleaning; and in the step of phosphorus deposition in advance, a P60 paper phosphorus source is selected and is more suitable for production of a GPP chip, and a piece of phosphorus paper is placed between each two silicon wafers. During the full process of GPP chip manufacturing, all steps of material selection to final object finish are related, the attachment surface of glass is wider by using an electrophoresis method to perform passivation on the glass, more uniform attachment is achieved, the quality of the GPP chip is improved, and information conduction can be performed better.
Description
Technical field
The present invention relates to GPP chip technical field, specially a kind of GPP chip electrophoresis manufacture craft.
Background technology
With the development of semiconductor technology, the requirement more and more higher to semiconductor surface passivation is blunt as GPP chip one kind
Change material, undoubtedly should possess：One is good electric property and reliability, including resistivity, dielectric strength, ionic mobility
Deng the introducing of material should not bring side effect to device；Two is good chemical stability, and semiconductor technology is to use chemical reagent
The technique of development, as the passivating material of device, should there is certain resistance to chemical attack；Three is operability, and technique will letter
It is single, it is reproducible, can be compatible with device fabrication, the coefficient of expansion of material is consistent with silicon materials or close；Four is Jing
Ji property.Can be mass-produced, manufacturing cost is low, there is the market competitiveness, material and technique have powerful vitality and exploitation latent
Power, according to above-mentioned requirements, the utilization semiconductor passivation special glass for occurring on market in recent years makes glassivation silicon diode
(GPP) chip is exactly a kind of ideal semiconductor passivation material, at present, using glassivation silicon diode (GPP) chip
Cry more and more higher, and obtain the generally accreditation of personage in electron trade.
Now certain methods on the market are to the process of GPP chip and do not meet preferable state now, so city now
A kind of electrophoresis passivation GPP chip is needed on face.
The content of the invention
It is an object of the invention to provide a kind of GPP chip electrophoresis manufacture craft, to solve background technology in propose
Problem.
For achieving the above object, the present invention provides following technical scheme：A kind of GPP chip electrophoresis manufacture craft, it is described
Manufacture craft include select manufacture material, Wafer Cleaning, phosphorus pre-deposited, boron diffusion, two-sided sandblasting oxide layer, passivation protection,
Glassivation, rinsing and scribing.
Preferably, the selection manufacture material adopts N-type czochralski silicon, selects original silicon chip thickness about 270 ± 10um.
Preferably, the Wafer Cleaning mixed acid, cleaning agent and pure water are cleaned in rinse bath or supersonic wave cleaning machine
Silicon chip, using dryer makes its clean surface and dries after the completion of cleaning.
Preferably, the phosphorus pre-deposited selects P60 papery phosphorus sources, the P60 paperys phosphorus source to be more suitable for the life of GPP chip
Produce, the silicon chip by silicon chip marshalling and is pressed in quartz boat per a phosphorus source paper is put in the middle of two panels.
Preferably, the boron diffusion boron source selects B40 papery boron sources.
Preferably, the two-sided sandblasting oxide layer, Jing after running water cleaning, sandblasting removes the not attached phosphorus paper side to silicon chip
Diffusion layer, while thinning silicon chip remove about 10um, with mixed acid, cleaning agent and pure water in rinse bath or supersonic wave cleaning machine
Cleaning silicon chip, removes defect, metal impurities, mobile ion and the organic matter of silicon chip surface so as to which clean surface is simultaneously dried.
Preferably, the passivation protection passivating solution includes hydrogen oxide, phosphoric acid and deionized water, and the proportioning of the passivating solution is
Hydrogen peroxide：Phosphoric acid：Deionized water=1：1：2-4；Temperature 70 C ± 5 DEG C, the time is 40s-60s.
Preferably, the glassivation is comprised the following steps：
(1) ethylene glycol and cellulose acetate are 1 as the volume ratio of suspension medium, the ethylene glycol and cellulose acetate:
1。
(2) per 100 grams of suspension in add 2--4 gram of glass dust, ultrasonic 4--5 minutes are carried out using ultrasonic wave, by ultrasound
Later liquid is poured in quartzy liquid bath after standing 4--5 minutes.
(3) 28% ammoniacal liquor is added in the ratio of 2.0-4.0g/L.
(4) then ultrasonic mixing will carry the device immersion of silicon chip and its counterelectrode for 4 minutes after above-mentioned electrolyte adds
In electrolyte, the optimum distance of silicon chip and counterelectrode is 2 centimetres.
(5) by dc source by the terminal of electrophoretic apparatus in addition 100--200V/cm field intensity after suspension stands 30 seconds,
Stand 2-4 minutes.
Preferably, the rinse liquid of the rinsing is fluoboric acid, and chip is rinsed with the mixed liquor of fluoboric acid and water,
Rinsing time is 60-90s, for removing the oxide layer on surface.
Preferably, the scribing is that the chip rinsed after completing is carried out into scribing process according to the shape of regulation, is obtained
Required chip.
The overall process of the GPP chip manufacture that the present invention is adopted, from the selection of material to last object make all referring to
Arrive, and glass is passivated using electrophoresis make the attachment surface of glass wider, makes attachment more uniform, improves GPP cores
The quality of piece, can preferably enter the conduction of row information.
Specific embodiment
Technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only
It is a part of embodiment of the invention, rather than the embodiment of whole.Based on the embodiment in the present invention, ordinary skill people
The every other embodiment that member is obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
Embodiment one：
A kind of GPP chip electrophoresis manufacture craft, manufacture craft include select manufacture material, Wafer Cleaning, phosphorus pre-deposited,
Boron diffusion, two-sided sandblasting oxide layer, passivation protection, glassivation, rinsing and scribing.
Select manufacture material to adopt N-type czochralski silicon, select original silicon chip thickness about 270um.
Wafer Cleaning mixed acid, the cleaning agent and pure water cleaning silicon chip in rinse bath or supersonic wave cleaning machine, has cleaned
Its clean surface is made into rear use dryer and dry.
P60 papery phosphorus sources are selected in phosphorus pre-deposited, and P60 papery phosphorus sources are more suitable for the production of GPP chip, in the middle of the every two panels of silicon chip
A phosphorus source paper is put, by silicon chip marshalling and is pressed in quartz boat.
Boron diffusion boron source selects B40 papery boron sources.
Two-sided sandblasting oxide layer, Jing after running water cleaning, sandblasting removes the diffusion layer of the not attached phosphorus paper side to silicon chip, together
When thinning silicon chip remove 10um, with mixed acid, cleaning agent and pure water in rinse bath or supersonic wave cleaning machine cleaning silicon chip, remove
The defect of silicon chip surface, metal impurities, mobile ion and organic matter so as to which clean surface is simultaneously dried.
Passivation protection passivating solution includes hydrogen oxide, phosphoric acid and deionized water, and the proportioning of passivating solution is hydrogen peroxide：Phosphoric acid：
Deionized water=1：1：3；72 DEG C of temperature, the time is 50s.
Glassivation is comprised the following steps：
(1) ethylene glycol and cellulose acetate are 1 as the volume ratio of suspension medium, ethylene glycol and cellulose acetate:1.
(2) per 100 grams of suspension in add 3 grams of glass dust, using ultrasonic wave carry out ultrasound 4 minutes, after ultrasound
Liquid is poured in quartzy liquid bath after standing 4 minutes.
(3) 28% ammoniacal liquor is added in the ratio of 4.0g/L.
(4) then ultrasonic mixing will carry the device immersion of silicon chip and its counterelectrode for 4 minutes after above-mentioned electrolyte adds
In electrolyte, the optimum distance of silicon chip and counterelectrode is 2 centimetres.
(5) 4 are stood by the terminal of electrophoretic apparatus in addition 200V/cm field intensity by dc source after suspension stands 30 seconds
Minute.
The rinse liquid of rinsing is fluoboric acid, and chip is rinsed with the mixed liquor of fluoboric acid and water, and rinsing time is
80s, for removing the oxide layer on surface.
Scribing is that the chip after rinsing is completed carries out scribing process according to the shape of regulation, obtains required chip
Embodiment two：
A kind of GPP chip electrophoresis manufacture craft, manufacture craft include select manufacture material, Wafer Cleaning, phosphorus pre-deposited,
Boron diffusion, two-sided sandblasting oxide layer, passivation protection, glassivation, rinsing and scribing.
Select manufacture material to adopt N-type czochralski silicon, select original silicon chip thickness about 265um.
Wafer Cleaning mixed acid, the cleaning agent and pure water cleaning silicon chip in rinse bath or supersonic wave cleaning machine, has cleaned
Its clean surface is made into rear use dryer and dry.
P60 papery phosphorus sources are selected in phosphorus pre-deposited, and P60 papery phosphorus sources are more suitable for the production of GPP chip, in the middle of the every two panels of silicon chip
A phosphorus source paper is put, by silicon chip marshalling and is pressed in quartz boat.
Boron diffusion boron source selects B40 papery boron sources.
Two-sided sandblasting oxide layer, Jing after running water cleaning, sandblasting removes the diffusion layer of the not attached phosphorus paper side to silicon chip, together
When thinning silicon chip remove about 10um, with mixed acid, cleaning agent and pure water in rinse bath or supersonic wave cleaning machine cleaning silicon chip, go
Except the defect of silicon chip surface, metal impurities, mobile ion and organic matter so as to which clean surface is simultaneously dried.
Passivation protection passivating solution includes hydrogen oxide, phosphoric acid and deionized water, and the proportioning of passivating solution is hydrogen peroxide：Phosphoric acid：
Deionized water=1：1：4；Temperature 65, the time is 40s.
Glassivation is comprised the following steps：
(1) ethylene glycol and cellulose acetate are 1 as the volume ratio of suspension medium, ethylene glycol and cellulose acetate:1.
(2) per 100 grams of suspension in add 2 grams of glass dust, using ultrasonic wave carry out ultrasound 5 minutes, after ultrasound
Liquid is poured in quartzy liquid bath after standing 5 minutes.
(3) 28% ammoniacal liquor is added in the ratio of 2.0g/L.
(4) then ultrasonic mixing will carry the device immersion of silicon chip and its counterelectrode for 4 minutes after above-mentioned electrolyte adds
In electrolyte, the optimum distance of silicon chip and counterelectrode is 2 centimetres.
(5) 2 are stood by the terminal of electrophoretic apparatus in addition 200V/cm field intensity by dc source after suspension stands 30 seconds
Minute.
The rinse liquid of rinsing is fluoboric acid, and chip is rinsed with the mixed liquor of fluoboric acid and water, and rinsing time is
90s, for removing the oxide layer on surface.
Scribing is that the chip after rinsing is completed carries out scribing process according to the shape of regulation, obtains required chip.
Although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding can carry out various changes, modification, replacement to these embodiments without departing from the principles and spirit of the present invention
And modification, the scope of the present invention be defined by the appended.
Claims (10)
1. a kind of GPP chip electrophoresis manufacture craft, it is characterised in that：The manufacture craft includes selecting manufacture material, silicon chip
Cleaning, phosphorus pre-deposited, boron diffusion, two-sided sandblasting oxide layer, passivation protection, glassivation, rinsing and scribing.
2. a kind of GPP chip electrophoresis manufacture craft according to claim 1, it is characterised in that：It is described to select manufacture material
Material adopts N-type czochralski silicon, selects original silicon chip thickness about 270 ± 10um.
3. a kind of GPP chip electrophoresis manufacture craft according to claim 2, it is characterised in that：The Wafer Cleaning is used
Mixed acid, the cleaning agent and pure water cleaning silicon chip in rinse bath or supersonic wave cleaning machine, it is made after the completion of cleaning using dryer
Clean surface is simultaneously dried.
4. a kind of GPP chip electrophoresis manufacture craft according to claim 3, it is characterised in that：The phosphorus pre-deposited choosing
With P60 papery phosphorus sources, the P60 paperys phosphorus source is more suitable for the production of GPP chip, the silicon chip per two panels in the middle of put a phosphorus source
Paper, by silicon chip marshalling and is pressed in quartz boat.
5. a kind of GPP chip electrophoresis manufacture craft according to claim 4, it is characterised in that：The boron spreads boron source
From B40 papery boron sources.
6. a kind of GPP chip electrophoresis manufacture craft according to claim 5, it is characterised in that：The two-sided sandblasting is gone
Oxide layer, Jing after running water cleaning, sandblasting removes the diffusion layer of the not attached phosphorus paper side to silicon chip, while thinning silicon chip is removed about
10um, with mixed acid, cleaning agent and pure water in rinse bath or supersonic wave cleaning machine cleaning silicon chip, remove silicon chip surface lack
Sunken, metal impurities, mobile ion and organic matter so as to which clean surface is simultaneously dried.
7. a kind of GPP chip electrophoresis manufacture craft according to claim 6, it is characterised in that：The passivation protection is blunt
Changing liquid includes hydrogen oxide, phosphoric acid and deionized water, and the proportioning of the passivating solution is hydrogen peroxide：Phosphoric acid：Deionized water=1：1：
2-4；Temperature 70 C ± 5 DEG C, the time is 40s-60s.
8. a kind of GPP chip electrophoresis manufacture craft according to claim 7, it is characterised in that：The glassivation bag
Include following steps：
(1) ethylene glycol and cellulose acetate are 1 as the volume ratio of suspension medium, the ethylene glycol and cellulose acetate:1.
(2) per 100 grams of suspension in add 2-4 gram of glass dust, ultrasonic 4-5 minutes are carried out using ultrasonic wave, after ultrasound
Liquid is poured in quartzy liquid bath after standing 4-5 minutes.
(3) 28% ammoniacal liquor is added in the ratio of 2.0-4.0g/L.
(4) then ultrasonic mixing will carry the device immersion electrolysis of silicon chip and its counterelectrode for 4 minutes after above-mentioned electrolyte adds
In liquid, the optimum distance of silicon chip and counterelectrode is 2 centimetres.
(5) 2- is stood by the terminal of electrophoretic apparatus in addition 100-200V/cm field intensity by dc source after suspension stands 30 seconds
4 minutes.
9. a kind of GPP chip electrophoresis manufacture craft according to claim 8, it is characterised in that：The rinsing of the rinsing
Liquid is fluoboric acid, and chip is rinsed with the mixed liquor of fluoboric acid and water, and rinsing time is 60-90s, for removing surface
Oxide layer.
10. a kind of GPP chip electrophoresis manufacture craft according to claim 9, it is characterised in that：The scribing is to float
Chip after washing into carries out scribing process according to the shape of regulation, obtains required chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611218647.7A CN106653600A (en) | 2016-12-26 | 2016-12-26 | GPP chip electrophoresis fabrication process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611218647.7A CN106653600A (en) | 2016-12-26 | 2016-12-26 | GPP chip electrophoresis fabrication process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106653600A true CN106653600A (en) | 2017-05-10 |
Family
ID=58826817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611218647.7A Withdrawn CN106653600A (en) | 2016-12-26 | 2016-12-26 | GPP chip electrophoresis fabrication process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106653600A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109309143A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | Wet cleaning texturing process |
| CN109755103A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | Method for reducing glass points of electrophoresis glass passivation process |
-
2016
- 2016-12-26 CN CN201611218647.7A patent/CN106653600A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109309143A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | Wet cleaning texturing process |
| CN109309143B (en) * | 2017-07-26 | 2021-02-26 | 天津环鑫科技发展有限公司 | Wet cleaning texturing process |
| CN109755103A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | Method for reducing glass points of electrophoresis glass passivation process |
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| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20170510 |
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