CN110246941A - 在硅衬底上生长的发光器件 - Google Patents
在硅衬底上生长的发光器件 Download PDFInfo
- Publication number
- CN110246941A CN110246941A CN201910406069.7A CN201910406069A CN110246941A CN 110246941 A CN110246941 A CN 110246941A CN 201910406069 A CN201910406069 A CN 201910406069A CN 110246941 A CN110246941 A CN 110246941A
- Authority
- CN
- China
- Prior art keywords
- layer
- nitride
- transparent material
- substrate
- type area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract description 49
- 229910052710 silicon Inorganic materials 0.000 title abstract description 28
- 239000010703 silicon Substances 0.000 title abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 239000012780 transparent material Substances 0.000 claims abstract description 27
- 229910002704 AlGaN Inorganic materials 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 229910004205 SiNX Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 12
- 238000002360 preparation method Methods 0.000 description 23
- 239000000463 material Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000004411 aluminium Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- 230000005518 electrochemistry Effects 0.000 description 4
- 210000004276 hyalin Anatomy 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000003447 ipsilateral effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
根据本发明的实施例的方法包括在包括硅的衬底上生长半导体结构。半导体衬底包括与衬底直接接触的含铝层,以及布置在n型区与p型区之间的III族氮化物发光层。该方法还包括移除衬底。在移除衬底之后,形成与含铝层直接接触的透明材料。透明材料被纹理化。
Description
技术领域
本发明涉及半导体发光器件,诸如在硅衬底上生长的III族氮化物发光二极管。
背景技术
包括发光二极管(LED)、谐振腔发光二极管(RCLED)、垂直腔激光二极管(诸如表面发射激光器(VCSEL))和边缘发射激光器的半导体发光器件是当前可用的最高效的光源之一。当前在能够跨可见光谱进行操作的高亮度发光器件的制造中感兴趣的材料体系包括III-V族半导体,特别是镓、铝、硼、铟和氮的二元、三元和四元合金,,其也被称为III族氮化物材料。典型地,通过借由金属-有机化学气相沉积(MOCVD)、分子束外延(MBE)或其它外延技术在蓝宝石、碳化硅、硅、III族氮化物或其它合适的衬底上外延生长不同组成和掺杂浓度的半导体层的堆叠来制作III族氮化物发光器件。堆叠通常包括形成在衬底之上的掺杂有例如Si的一个或多个n型层、形成在一个或多个n型层之上的有源区中的一个或多个发光层以及形成在有源区之上的掺杂有例如Mg的一个或多个p型层。电接触形成在n型区和p型区上。
图1图示了在US 7,256,483中更详细地描述的倒装芯片LED。该LED包括n型层16、有源层18以及p型层20,其生长在蓝宝石生长衬底(未示出)上。p层20和有源层18的部分在LED形成过程期间被蚀刻掉,并且金属50(金属化层加键合金属)在与p接触金属24同侧上接触n层16。底层填充材料52可以沉积在LED下方的空隙中以降低跨LED的热梯度,增加LED与封装衬底之间的附连的机械强度,并且防止污染物接触LED材料。n金属50和p金属24分别被键合到封装衬底12上的垫22A和22B。封装衬底12上的接触垫22A和22B使用通孔28A和28B和/或金属迹线连接到可焊电极26A和26B。生长衬底被移除,从而暴露n型层16的表面。例如通过使用KOH溶液的光电化学蚀刻来粗糙化该表面以得到增加的光提取。
发明内容
本发明的目的是提供展现改善的光提取的生长在硅衬底上的发光器件。
本发明的实施例包括半导体结构,该半导体结构包括布置在n型区与p型区之间的III族氮化物发光层,以及含铝层。含铝层形成半导体结构的顶部表面。透明材料被布置在含铝层上。透明材料的表面被纹理化。
根据本发明的实施例的方法包括在包括硅的衬底上生长半导体结构。半导体衬底包括与衬底直接接触的含铝层,以及布置在n型区与p型区之间的III族氮化物发光层。该方法还包括移除衬底。在移除衬底之后,形成与含铝层直接接触的透明材料。透明材料被纹理化。
本发明的实施例包括半导体结构,其包括布置在n型区与p型区之间的III族氮化物发光层。该半导体结构还包括含铝层。多孔III族氮化物区被布置在含铝层与III族氮化物发光层之间。
附图说明
图1图示了具有粗糙化的顶部表面的倒装芯片LED。
图2图示了生长在硅衬底上的III族氮化物结构。
图3图示了在倒装芯片配置中附连到支撑的图2的结构。
图4图示了包括布置在图3的半导体结构上的粗糙化的透明材料的器件的顶部表面的部分。
图5图示了包括布置在准备层与器件结构之间的多孔层的半导体结构的部分。
图6图示了包括波导中断区和散射结构的器件。
图7图示了多孔III族氮化物层中的孔的生长。
图8图示了用于形成多孔III族氮化物层的装置。
具体实施方式
尽管以下示例是指发射蓝光或UV光的III族氮化物LED,但是诸如激光二极管之类的LED以外的半导体发光器件,以及由其它材料体系(诸如其它III-V族材料、III族磷化物以及III族砷化物材料)制成的半导体发光器件都可以使用在本发明的实施例中。
III族氮化物器件通常生长在蓝宝石或SiC衬底上。如上所述,可以通过蚀刻、激光剥离或任何其它合适的技术来移除这些衬底。通过移除这些衬底而暴露的III族氮化物材料常常是GaN,其可以例如通过光电化学蚀刻被容易地粗糙化。
硅因其低成本、宽可用性以及良好表征的电属性和热属性而是用于III族氮化物器件的生长的有吸引力的衬底。由于包括III族氮化物材料与硅之间的晶格失配和热失配引起的破裂的材料质量问题,硅尚未被广泛用作用于III族氮化物器件的生长的衬底。此外,Ga与Si之间的化学相互作用要求第一生长层本质上是无Ga的。典型地,AlN被用作第一生长层。AlN第一生长层导致生长在AlN第一生长层之上的GaN层中的压缩应变。在晶片从高的生长温度冷却期间,Si与GaN之间的热膨胀中的失配导致GaN中的拉伸应变。通过在高温下以压缩状态生长,通过冷却生成的拉伸应变被调节。
图2图示了生长在硅衬底30上的III族氮化物结构。在本文所描述的实施例中,硅衬底30可以是硅晶片或复合衬底,诸如绝缘体上的硅衬底,其中生长表面(即,顶部表面)是硅。为了减少或消除与晶格失配和热失配相关联的问题,首先在硅衬底30上生长一个或多个准备层32。在图2中,图示了两个准备层,AlN种子层34和AlGaN缓冲层36。AlN种子层34可以是例如小于100nm厚并且以低于GaN的生长温度的温度沉积的AlN层,所述GaN的生长温度通常大于900℃。A1GaN缓冲层36可以是例如在高温(例如大于800℃)下生长的基本上单晶层。A1GaN缓冲层36可以在III族氮化物器件结构38、特别是在n型区40中生成压缩应力,其可以减少III族氮化物器件结构38中的破裂。在一些实施例中,省略A1GaN缓冲层36,并且在AlN种子层34上直接生长III族氮化物器件结构38。包括n型区40、发光区42和p型区44的III族氮化物器件结构38生长在准备层32上。下文更详细地描述III族氮化物器件结构38。
如上所述,含铝准备层32可以减少或消除与晶格失配和热失配相关联的问题。然而,由于种种原因,含铝准备层32是成问题的。首先,如上参照图1所述,在一些器件中,移除生长衬底并且粗糙化或图案化通过移除生长衬底而暴露的半导体结构以改善光提取。与通常是通过移除常规的蓝宝石或SiC生长衬底而暴露的III族氮化物表面的GaN不同,上述AlN种子层34难以用诸如湿法蚀刻和光电化学蚀刻之类的常见技术粗糙化。AlN必须通过干法蚀刻被粗糙化或移除,这是能够损坏半导体结构并且从而减少晶片产量的侵略性过程。其次,含铝准备层32的低折射率(AlN具有~2.2的折射率)可能导致在较高折射率的主要为GaN(~2.4的折射率)的器件结构38中生成的光损失于沿含铝准备层32与器件结构38之间的界面的内部波导。
本发明的实施例可以减少或消除与生长在Si衬底上的III族氮化物器件中的含铝准备层相关联的问题。
图6图示了根据本发明的实施例的器件。在图6中所示的器件中,半导体结构相对于III族氮化物层的生长方向翻转,并且n和p接触46和48以如本领域中已知的倒装芯片方式形成在半导体结构上。为了解决在移除硅衬底之后粗糙化含铝准备层以用于光提取的难度问题,图6中所示的器件包括在硅衬底30被移除之后形成在准备层32上的散射结构72。散射结构72可以是例如如下所述的粗糙化的氧化硅或氮化硅层。为了解决沿含铝准备层32与器件结构38之间的界面的波导的问题,图6的器件包括在准备层32与器件结构38之间的波导中断散射结构70。散射结构70可以是例如如下所述的多孔III族氮化物层或粗糙化的、图案化的或纹理化的III族氮化物层。
图6中所示的器件可以如下形成。如上参照图2所述,准备层32首先生长在硅衬底30上。在生长准备层32之后,在一些实施例中,形成可选的散射结构70。
散射结构70可以是粗糙化的、图案化的或纹理化的III族氮化物层。在一些实施例中,生长A1N种子层34和AlGaN缓冲层36,然后晶片从反应器移除并且例如通过蚀刻或机械技术被处理以在AlGaN缓冲层36上创建粗糙化的、纹理化的或图案化的非平面表面。然后将晶片返回到生长腔,并且在AlGaN缓冲层36的非平面表面之上生长下文所述的器件结构38。在其中省略A1GaN缓冲层36的器件中,在器件结构38的生长之前,可以将AlN种子层34的表面制成非平面的。粗糙化的、纹理化的或图案化的表面可以增加界面处的散射量,这可以减少损失于界面处的波导的光的量。
散射结构70可以是形成在准备层32与器件结构38之间的多孔半导体材料区60,如图5中所示。多孔区60可以增加界面处的散射量,这可以减少损失于界面处的波导的光的量。
如在本领域中已知的,多孔区60可以通过任何合适的技术形成。例如,多孔区60可以如下形成:如上所述,在Si生长衬底上生长一个或多个含铝准备层32。在准备层32之上生长将被制成多孔的通常是GaN以及包括但不限于AlGaN和InGaN的任何合适的III族氮化物材料的III族氮化物层62。在图8中图示用于将III族氮化物层62制成多孔的设备。银81通过热蒸发被沉积在半导体结构80的顶部表面区中,所述半导体结构80包括III族氮化物层62、准备层32以及硅衬底30。晶片80被放置在特氟隆(Teflon)表面82上。银区域81与垫片84接触,并且半导体结构80用螺栓86固定到特氟隆表面82。在阳极蚀刻过程中,充当阳极和阴极的铂线88连接到电源90。阳极线连接到垫片84。晶片80和铂线88被浸泡在2M NaOH或KOH溶液92中。例如以10与20 mA/cm2之间的密度通过线和晶片施加直流电。通过250W汞灯供应可选的UV照明94。适当的孔隙度可能要求10到60分钟的处理,此后关断灯和电流源。可替换地,铂可以直接被施加在晶片的表面之上,或诸如KOH、氟化物酸、或CH3OH∶HF∶H2O2之类的不同溶液被用在光电化学驱动过程中。孔隙度的密度和尺寸可以通过变化溶液的浓度来控制。可以用低摩尔浓度溶液(0.5%KOH)产生小孔层。可以用高摩尔浓度溶液(2%KOH)产生表面下方的大孔层。
图7图示了孔76的生长。在孔76的末端,蚀刻几乎仅仅发生在电解质-半导体界面的端头处,使得孔从孔的底部向下生长,如图7中箭头所示。通过在蚀刻期间更改溶液,可以创建多层孔隙度。
在如图7中所示的多孔区60中,气孔76形成在III族氮化物材料中。空隙可以具有宽度78,其在尺寸方面在数十到数百nm的量级上,例如在一些实施例中在尺寸方面大于10nm并且在一些实施例中在尺寸方面小于500nm。最邻近的空隙可以具有间隔80,其相距数十到数百nm的量级,例如在一些实施例中相距大于10nm并且在一些实施例中相距小于500nm。如图5中所示的多孔区60可以具有厚度82,其在一些实施例中大于0.02厚并且在一些实施例中小于3厚。定义为作为多孔区60的总体积的百分比的空隙体积的百分比孔隙度在一些实施例中可以大于20%,在一些实施例中小于80%,并且在一些实施例中大于50%。在一些实施例中,孔可以是从多孔区60的表面向准备层32延伸的基本上并行的隧道。孔内的III族氮化物材料与环境气体之间的折射率中的差异导致散射。
被制成多孔区60的III族氮化物层62的厚度可以例如在一些实施例中大于0.5,在一些实施例中小于5,在一些实施例中小于2,在一些实施例中在0.5与1.5之间,并且在一些实施例中为1。尽管在一些实施例中,III族氮化物层可以是无掺杂的或p型材料,但其通常是n型GaN。在一些实施例中,整个厚度的III族氮化物层62可以被制成多孔的,或者在一些实施例中,小于整个厚度的III族氮化物层62可以被制成多孔的,使得III族氮化物层62的无孔区被布置在多孔区60与准备层32之间。在一些实施例中,多孔区60延伸到准备层32中。在形成多孔区60之后,该结构被返回到生长反应器并且生长器件结构38,如下所述。
III族氮化物器件结构38生长在上述的任何结构之上:没有粗糙化或纹理化的准备层32、粗糙化的或纹理化的准备层32或多孔区60。器件结构38包括夹在n和p型区40和44之间的发光或有源区42,其通常包括至少一个InGaN发光层,每个典型地包括至少一个GaN层。n型区40可以首先生长,并且可以包括不同组成和掺杂浓度的多个层,其包括例如可以是n型或非有意掺杂的层,以及设计用于对发光区高效发射光而言合期望的特定光学、材料或电属性的n型或者甚至p型器件层。发光或有源区42生长在n型区40之上。合适的发光区42的示例包括单个厚或薄的发光层,或者多量子阱发光区,其包括由阻挡层分离的多个薄或厚的发光层。p型区44然后可以生长在发光区42之上。类似于n型区40,p型区44可以包括不同组成、厚度和掺杂浓度的多个层,其包括非有意掺杂的层,或n型层。在衬底30上生长的所有层(包括区32和38)的总厚度在一些实施例中可以小于10,并且在一些实施例中可以小于6。
在器件结构38的生长之后,可以进一步处理包括衬底30和生长在衬底上的半导体结构32和38的晶片。例如,为了形成倒装芯片LED,反射性金属p接触形成在p型区44上。然后,器件结构38通过标准光刻操作被图案化,并且对于每个LED,其被蚀刻以移除p型区44的整个厚度的一部分和发光区42的整个厚度的一部分,以形成台面,其露出其上形成金属n接触的n型区40的表面。可以以任何合适的方式形成台面和p接触以及n接触。形成台面和p接触以及n接触为本领域技术人员所公知。
然后,晶片可以被单个化成单独地附连到支撑的各个器件,或者在单个化之前在晶片规模上附连到支撑。支撑是机械支撑半导体结构的结构。合适的支撑的示例包括具有用于形成到半导体结构的电连接的导电通孔的绝缘或半绝缘晶片(诸如硅晶片)、例如通过镀层形成在半导体结构上的厚金属键合垫,或陶瓷、金属或任何其它合适的底座。在将半导体结构附连到支撑之后,在单个化之前或之后,可以从III族氮化物结构移除生长衬底。
图3图示了附连到支撑的倒装芯片器件,其中生长衬底被移除。器件结构38通过金属n接触46和金属p接触48附连到支撑50。n接触和p接触可以通过间隙47被电隔离,所述间隙47可以填充有空气、环境气体或固体绝缘材料,诸如硅的氧化物、硅树脂或环氧树脂。通过移除硅生长衬底30而暴露的所生长的半导体材料的表面是AlN种子层34的表面。因为接触46和48中的一个或二者是反射性的,所以大部分光通过顶部和侧表面逃脱图3的结构。
为了避免粗糙化、纹理化或者移除在移除如上所述的生长衬底之后暴露的AlN种子层所造成的损坏,在一些实施例中,粗糙化的材料层形成在通过移除生长衬底而露出的半导体结构的表面上。图4图示了根据本发明的实施例的器件的部分。如上所述,当生长衬底被移除时,AlN种子层34的表面被暴露。在图4中所示的结构中,具有与AlN种子层34的折射率接近或匹配的折射率的光学透明材料层56形成在AlN种子层34的表面之上。层56的顶部表面54被粗糙化以增强从半导体结构的光提取。
透明材料56被选择成对发光区所发射的光透明,使得通过透明材料52的吸收或散射微不足道。透明材料56的折射率在一些实施例中为至少1.9,在一些实施例中为至少2.0,并且在一些实施例中为至少2.1,使得透明材料56的折射率接近A1N种子层34(2.2的折射率)和器件结构38中的任何GaN层(2.4的折射率)的折射率。合适的透明材料56的示例包括非III族氮化物材料、硅的氧化物、硅的氮化物、硅的氮氧化物、SiO2、Si3N4、SiOxNy及其混合物。在一些实施例中,透明材料56可以是多层结构。透明材料56可以通过例如化学气相沉积或任何其它合适的技术形成。
可以通过任何合适的技术或技术的组合来图案化、粗糙化或纹理化透明材料56的表面54,包括例如,干法或湿法蚀刻以及利用自掩蔽、图案化掩蔽、光刻图案化、微球图案化或任何其它合适的掩蔽技术的干法或湿法蚀刻。例如,Si3N4层56可以使用已知的光刻技术被图案化有随机或规则的特征,诸如i-线光致抗蚀剂图案化,随后为CHF3等离子体蚀刻,如本领域中已知的那样。在一些实施例中,图案化、纹理化或粗糙化通过透明材料56的整个厚度延伸到种子层34的表面。
在一些实施例中,一个或多个附加的、可选的结构可以形成在透明层56的粗糙化表面54之上。例如,一个或多个波长转换材料、光学器件、滤波器(诸如二向色滤波器)或其它结构可以被布置在透明层56之上,与透明层56接触或从透明层56间隔开。
在已经详细描述了本发明的情况下,本领域技术人员将领会到,考虑到本公开,可以在不脱离于本文所描述的发明概念的精神的情况下对本发明做出修改。例如,不同实施例的不同元件可以被组合以形成新的实施例。因此,不旨在将本发明的范围局限于所图示和描述的特定实施例。
Claims (14)
1.一种器件,包括:
半导体结构,其包括布置在n型区与p型区之间的III族氮化物发光层;
具有纹理化表面的透明材料;
在半导体结构与透明材料之间的含铝层;以及
在半导体结构与含铝层之间的纹理化的III族氮化物层。
2.权利要求1的器件,其中纹理化的III族氮化物层是波导中断散射结构。
3.权利要求1的器件,其中透明材料是SiOx和SiNx之一。
4.权利要求1的器件,其中含铝层包括n型区上的AlGaN层。
5.权利要求4的器件,还包括AlGaN层上的AlN层。
6.权利要求1的器件,其中透明材料具有在1.9和2.2之间的折射率。
7.权利要求1的器件,其中透明材料形成器件的最外表面。
8.一种器件,包括:
半导体结构,其包括布置在n型区与p型区之间的III族氮化物发光层;
具有纹理化表面的透明材料;
在半导体结构与透明材料之间的含铝层;以及
在含铝层与半导体结构之间的多孔III族氮化物区。
9.权利要求8的器件,其中多孔III族氮化物区是GaN。
10.权利要求8的器件,其中透明材料在含铝层上。
11.权利要求8的器件,其中含铝层包括n型区上的AlGaN层。
12.权利要求11的器件,还包括AlGaN层上的AlN层。
13.权利要求8的器件,其中透明材料具有在1.9和2.2之间的折射率。
14.权利要求8的器件,其中透明材料形成器件的最外表面。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261612536P | 2012-03-19 | 2012-03-19 | |
US61/612536 | 2012-03-19 | ||
CN201380015388.6A CN104205369A (zh) | 2012-03-19 | 2013-03-18 | 在硅衬底上生长的发光器件 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380015388.6A Division CN104205369A (zh) | 2012-03-19 | 2013-03-18 | 在硅衬底上生长的发光器件 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110246941A true CN110246941A (zh) | 2019-09-17 |
Family
ID=48326360
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910406069.7A Pending CN110246941A (zh) | 2012-03-19 | 2013-03-18 | 在硅衬底上生长的发光器件 |
CN201380015388.6A Pending CN104205369A (zh) | 2012-03-19 | 2013-03-18 | 在硅衬底上生长的发光器件 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380015388.6A Pending CN104205369A (zh) | 2012-03-19 | 2013-03-18 | 在硅衬底上生长的发光器件 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20150084058A1 (zh) |
EP (1) | EP2828899B1 (zh) |
JP (2) | JP6574130B2 (zh) |
KR (1) | KR102116152B1 (zh) |
CN (2) | CN110246941A (zh) |
RU (1) | RU2657335C2 (zh) |
TW (2) | TWI594457B (zh) |
WO (1) | WO2013140320A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11095096B2 (en) | 2014-04-16 | 2021-08-17 | Yale University | Method for a GaN vertical microcavity surface emitting laser (VCSEL) |
KR102425935B1 (ko) | 2014-09-30 | 2022-07-27 | 예일 유니버시티 | GaN 수직 마이크로캐비티 표면 방출 레이저(VCSEL)를 위한 방법 |
US11018231B2 (en) | 2014-12-01 | 2021-05-25 | Yale University | Method to make buried, highly conductive p-type III-nitride layers |
CN107710381B (zh) * | 2015-05-19 | 2022-01-18 | 耶鲁大学 | 涉及具有晶格匹配的覆层的高限制因子的iii族氮化物边发射激光二极管的方法和器件 |
US10096975B1 (en) | 2017-03-27 | 2018-10-09 | International Business Machines Corporation | Laterally grown edge emitting laser |
JP2023510979A (ja) * | 2020-01-22 | 2023-03-15 | ポロ テクノロジーズ リミテッド | 半導体構造及び製造方法 |
GB2593693B (en) * | 2020-03-30 | 2022-08-03 | Plessey Semiconductors Ltd | LED precursor |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006093602A (ja) * | 2004-09-27 | 2006-04-06 | Toyoda Gosei Co Ltd | 発光素子 |
US20070018183A1 (en) * | 2005-07-21 | 2007-01-25 | Cree, Inc. | Roughened high refractive index layer/LED for high light extraction |
US20090127575A1 (en) * | 2007-09-21 | 2009-05-21 | Ray-Hua Horng | Light-Emitting Diode Chip With High Light Extraction And Method For Manufacturing The Same |
CN102067343A (zh) * | 2008-06-27 | 2011-05-18 | 奥斯兰姆奥普托半导体有限责任公司 | 用于制造光电子器件的方法以及光电子器件 |
US20110227037A1 (en) * | 2010-03-12 | 2011-09-22 | Applied Materials, Inc. | Enhancement of led light extraction with in-situ surface roughening |
CN102376839A (zh) * | 2010-08-20 | 2012-03-14 | 亚威朗(美国) | 具有光学高密度材料涂层衬底的发光器件 |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3325479B2 (ja) * | 1997-01-30 | 2002-09-17 | 株式会社東芝 | 化合物半導体素子及びその製造方法 |
US6266355B1 (en) * | 1997-09-12 | 2001-07-24 | Sdl, Inc. | Group III-V nitride laser devices with cladding layers to suppress defects such as cracking |
EP1234344B1 (en) * | 1999-12-03 | 2020-12-02 | Cree, Inc. | Enhanced light extraction in leds through the use of internal and external optical elements |
JP2001223165A (ja) * | 2000-02-10 | 2001-08-17 | Hitachi Cable Ltd | 窒化物半導体及びその製造方法 |
JP2003218396A (ja) * | 2001-11-15 | 2003-07-31 | Mitsubishi Cable Ind Ltd | 紫外線発光素子 |
JP3960815B2 (ja) * | 2002-02-12 | 2007-08-15 | シャープ株式会社 | 半導体発光素子 |
JP2003347601A (ja) * | 2002-05-28 | 2003-12-05 | Matsushita Electric Works Ltd | 発光ダイオード照明装置 |
JP4329374B2 (ja) * | 2002-07-29 | 2009-09-09 | パナソニック電工株式会社 | 発光素子およびその製造方法 |
JPWO2004042832A1 (ja) * | 2002-11-06 | 2006-03-09 | サンケン電気株式会社 | 半導体発光素子及びその製造方法 |
JP4590905B2 (ja) * | 2003-10-31 | 2010-12-01 | 豊田合成株式会社 | 発光素子および発光装置 |
JP2005244201A (ja) * | 2004-01-28 | 2005-09-08 | Matsushita Electric Ind Co Ltd | 半導体発光素子及びその製造方法 |
JP4843235B2 (ja) * | 2004-03-18 | 2011-12-21 | 昭和電工株式会社 | Iii族窒化物半導体発光素子の製造方法 |
WO2005091390A1 (en) * | 2004-03-18 | 2005-09-29 | Showa Denko K.K. | Group iii nitride semiconductor light-emitting device and producing method thereof |
JP2007533164A (ja) * | 2004-04-15 | 2007-11-15 | トラスティーズ オブ ボストン ユニバーシティ | テクスチャ出しされた半導体層を特徴とする光学装置 |
JP4857596B2 (ja) * | 2004-06-24 | 2012-01-18 | 豊田合成株式会社 | 発光素子の製造方法 |
US7256483B2 (en) | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
KR100712753B1 (ko) * | 2005-03-09 | 2007-04-30 | 주식회사 실트론 | 화합물 반도체 장치 및 그 제조방법 |
JP4476912B2 (ja) * | 2005-09-29 | 2010-06-09 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
TWI270222B (en) * | 2005-10-07 | 2007-01-01 | Formosa Epitaxy Inc | Light emitting diode chip |
JP2007134388A (ja) * | 2005-11-08 | 2007-05-31 | Sharp Corp | 窒化物系半導体素子とその製造方法 |
US8729580B2 (en) * | 2005-12-06 | 2014-05-20 | Toshiba Techno Center, Inc. | Light emitter with metal-oxide coating |
JP2007266571A (ja) * | 2006-02-28 | 2007-10-11 | Mitsubishi Cable Ind Ltd | Ledチップ、その製造方法および発光装置 |
CN101043059A (zh) * | 2006-03-24 | 2007-09-26 | 中国科学院半导体研究所 | 采用衬底表面粗化技术的倒装结构发光二极管制作方法 |
JP2007329464A (ja) * | 2006-05-09 | 2007-12-20 | Mitsubishi Chemicals Corp | 半導体発光素子 |
JP2008117922A (ja) * | 2006-11-02 | 2008-05-22 | Yamaguchi Univ | 半導体発光素子及びその製造方法 |
CN101821861B (zh) * | 2007-10-12 | 2012-02-01 | 新加坡科技研究局 | 不含磷的基于氮化物的红和白发光二极管的制造 |
CN101257075B (zh) * | 2008-03-13 | 2010-05-12 | 鹤山丽得电子实业有限公司 | 一种发光二极管器件及其制造方法 |
JP5164641B2 (ja) * | 2008-04-02 | 2013-03-21 | Dowaエレクトロニクス株式会社 | 電流狭窄型半導体発光素子の製造方法 |
JP4719244B2 (ja) * | 2008-04-25 | 2011-07-06 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
JP2009289947A (ja) * | 2008-05-29 | 2009-12-10 | Kyocera Corp | 発光素子及び照明装置 |
WO2010020069A1 (en) * | 2008-08-19 | 2010-02-25 | Lattice Power (Jiangxi) Corporation | METHOD FOR FABRICATING InGaAlN LIGHT-EMITTING DIODES WITH A METAL SUBSTRATE |
TWI401729B (zh) * | 2008-10-16 | 2013-07-11 | Advanced Optoelectronic Tech | 阻斷半導體差排缺陷之方法 |
TWI422063B (zh) * | 2008-11-14 | 2014-01-01 | Samsung Electronics Co Ltd | 半導體發光裝置 |
JP5311408B2 (ja) * | 2008-12-26 | 2013-10-09 | シャープ株式会社 | 窒化物半導体発光素子 |
WO2010112980A1 (en) * | 2009-04-02 | 2010-10-07 | Philips Lumileds Lighting Company, Llc | Iii-nitride light emitting device including porous semiconductor layer |
JP5597933B2 (ja) * | 2009-05-01 | 2014-10-01 | 住友電気工業株式会社 | Iii族窒化物半導体層貼り合わせ基板およびその製造方法 |
JP2011082233A (ja) * | 2009-10-05 | 2011-04-21 | Hitachi Cable Ltd | 発光素子 |
KR101082788B1 (ko) * | 2009-10-16 | 2011-11-14 | 한국산업기술대학교산학협력단 | 다공성 질화물 반도체 상의 고품질 비극성/반극성 반도체 소자 및 그 제조 방법 |
CN102782818B (zh) * | 2010-01-27 | 2016-04-27 | 耶鲁大学 | 用于GaN装置的基于导电性的选择性蚀刻和其应用 |
US8692198B2 (en) * | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
US8154052B2 (en) * | 2010-05-06 | 2012-04-10 | Koninklijke Philips Electronics N.V. | Light emitting device grown on wavelength converting substrate |
JP5277270B2 (ja) * | 2010-07-08 | 2013-08-28 | 学校法人立命館 | 結晶成長方法および半導体素子 |
JP2012124306A (ja) * | 2010-12-08 | 2012-06-28 | Toyoda Gosei Co Ltd | 半導体発光素子 |
US20130026480A1 (en) * | 2011-07-25 | 2013-01-31 | Bridgelux, Inc. | Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow |
US20130082274A1 (en) * | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
JP5803708B2 (ja) * | 2012-02-03 | 2015-11-04 | 豊田合成株式会社 | 半導体発光素子の製造方法 |
US8946747B2 (en) * | 2012-02-13 | 2015-02-03 | Cree, Inc. | Lighting device including multiple encapsulant material layers |
-
2013
- 2013-03-18 WO PCT/IB2013/052137 patent/WO2013140320A1/en active Application Filing
- 2013-03-18 US US14/384,173 patent/US20150084058A1/en not_active Abandoned
- 2013-03-18 EP EP13721400.3A patent/EP2828899B1/en active Active
- 2013-03-18 CN CN201910406069.7A patent/CN110246941A/zh active Pending
- 2013-03-18 RU RU2014142050A patent/RU2657335C2/ru active
- 2013-03-18 KR KR1020147029213A patent/KR102116152B1/ko active IP Right Grant
- 2013-03-18 JP JP2015501026A patent/JP6574130B2/ja active Active
- 2013-03-18 CN CN201380015388.6A patent/CN104205369A/zh active Pending
- 2013-03-19 TW TW102109746A patent/TWI594457B/zh active
- 2013-03-19 TW TW106114060A patent/TW201735398A/zh unknown
-
2018
- 2018-08-10 JP JP2018150949A patent/JP2019004164A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006093602A (ja) * | 2004-09-27 | 2006-04-06 | Toyoda Gosei Co Ltd | 発光素子 |
US20070018183A1 (en) * | 2005-07-21 | 2007-01-25 | Cree, Inc. | Roughened high refractive index layer/LED for high light extraction |
US20090127575A1 (en) * | 2007-09-21 | 2009-05-21 | Ray-Hua Horng | Light-Emitting Diode Chip With High Light Extraction And Method For Manufacturing The Same |
CN102067343A (zh) * | 2008-06-27 | 2011-05-18 | 奥斯兰姆奥普托半导体有限责任公司 | 用于制造光电子器件的方法以及光电子器件 |
US20110227037A1 (en) * | 2010-03-12 | 2011-09-22 | Applied Materials, Inc. | Enhancement of led light extraction with in-situ surface roughening |
CN102376839A (zh) * | 2010-08-20 | 2012-03-14 | 亚威朗(美国) | 具有光学高密度材料涂层衬底的发光器件 |
Also Published As
Publication number | Publication date |
---|---|
CN104205369A (zh) | 2014-12-10 |
WO2013140320A1 (en) | 2013-09-26 |
KR20140144228A (ko) | 2014-12-18 |
RU2014142050A (ru) | 2016-05-20 |
RU2657335C2 (ru) | 2018-06-13 |
US20150084058A1 (en) | 2015-03-26 |
JP2015514312A (ja) | 2015-05-18 |
TW201349574A (zh) | 2013-12-01 |
EP2828899A1 (en) | 2015-01-28 |
EP2828899B1 (en) | 2018-12-26 |
KR102116152B1 (ko) | 2020-05-28 |
TWI594457B (zh) | 2017-08-01 |
JP6574130B2 (ja) | 2019-09-11 |
JP2019004164A (ja) | 2019-01-10 |
TW201735398A (zh) | 2017-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9373755B2 (en) | Light-emitting diodes on concave texture substrate | |
US8674375B2 (en) | Roughened high refractive index layer/LED for high light extraction | |
KR101732524B1 (ko) | 붕소를 포함하는 ⅲ-질화물 발광 장치 | |
JP6419077B2 (ja) | 波長変換発光デバイス | |
CN110246941A (zh) | 在硅衬底上生长的发光器件 | |
US20100038661A1 (en) | Light-Emitting Diode With Non-Metallic Reflector | |
KR100969127B1 (ko) | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 | |
JP2011060966A (ja) | 発光装置 | |
US10002988B2 (en) | Surface treatment of a semiconductor light emitting device | |
KR20130066308A (ko) | 발광소자 | |
KR20130072825A (ko) | 발광소자 | |
KR20120005662A (ko) | 발광 소자 | |
KR101104645B1 (ko) | 발광 소자 및 그의 제조 방법 | |
US10147840B2 (en) | Light emitting diode with light emitting layer containing nitrogen and phosphorus | |
KR20090041179A (ko) | 발광 다이오드 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190917 |
|
WD01 | Invention patent application deemed withdrawn after publication |