CN110146726A - Method for controlling probe temperature - Google Patents
Method for controlling probe temperature Download PDFInfo
- Publication number
- CN110146726A CN110146726A CN201910427559.5A CN201910427559A CN110146726A CN 110146726 A CN110146726 A CN 110146726A CN 201910427559 A CN201910427559 A CN 201910427559A CN 110146726 A CN110146726 A CN 110146726A
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- Prior art keywords
- temperature
- tip
- electrode
- heating
- heating electrode
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/02—Probe holders
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/08—Probe characteristics
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q80/00—Applications, other than SPM, of scanning-probe techniques
Abstract
This application discloses a kind of methods for controlling probe temperature.Probe includes cantilever part, tip and controller.Tip is located at cantilever portion distal end and protrudes from cantilever part.Tip includes pedestal, needle tip and the multiple support arms extended from pedestal, and each support arm is connected to needle tip in the end far from pedestal.Multiple electrodes are equipped in pedestal, multiple electrodes include heating electrode and sensing electrode.Method of the invention is able to carry out the maskless pattern of passivation layer, efficiently quick, at low cost and technique simplifies by accurately controlling the temperature of probe.
Description
Technical field
The present invention relates to the showing methods on the passivation layer of substrate material, are particularly used for control and are passivated on substrate material
The method of the probe temperature of 3-D graphic structure is formed on layer.
Background technique
With the fast development of microelectronic technique, the difficulty of the miniaturization of device also increasingly increases.Due to three wieners
The extensive use of rice structure, therefore the construction of three-dimension device also becomes an important channel for improving device integration.
Currently, the method for common preparation three-dimensional structure mainly has two-Photon Interference exposure technology, laser interference exposure work
Skill, gradation exposure technique, ion beam etch process and depositing operation.But there are many disadvantages in these techniques, for example, sharp
When with two-Photon Interference exposure technology or laser interference exposure technique preparation 3-D graphic, dimension of picture is influenced by spot size
It is very big, and the minimum dimension for preparing the 3-D graphic obtained is extremely difficult to nanoscale scale all in micron or sub-micrometer scale
Precision.
Therefore this field needs the production method of a kind of three-dimensional micro-nano structure or figure, especially a kind of based on high-precision
Maskless pattern method, replace traditional optical lithography techniques using pattern mask version.Realize high-precision two-dimensional or
Person's three-dimensional micro-nano structure figure direct write and manipulation, to prepare three-dimensional micro-nano functional structure and device.
Summary of the invention
The purpose of the present invention is to provide a kind of on the passivation layer of substrate material prepares the probe temperature of 3-D graphic structure
Control method is spent, by carrying out being heated to required temperature to scanning probe, high-precision material vaporization is carried out to graphical target.
Probe forms an angle along substrate plane motion or shape to be moved to form three-dimensional structure, realizes truly three-dimensional knot
The preparation of structure provides new technology for the processing of three-dimension device.Further, since passivating material is vaporized by probe scanning,
Probe motion resistance is small, can be realized and carries out high-precision motion control, so as to be formed by this method with micro-nano
The three-dimensional structure of scale dimensions precision.
In order to achieve the above objectives, the present invention provides a kind of method for controlling probe temperature, and the probe includes: cantilever
Part；Tip, the tip are located at the cantilever portion distal end and protrude from the cantilever part；And controller；Wherein institute
Stating tip includes pedestal, needle tip and the multiple support arms extended from the pedestal, and each support arm is far from the pedestal
End be connected to the needle tip；Wherein be equipped with multiple electrodes in the pedestal, the multiple electrode include heating electrode and
Sensing electrode；
The described method includes:
Pass through tip described in the heating heated by electrodes；
The temperature at the tip is sensed by the sensing electrode；
The temperature for being measured the sensing electrode by the controller is compared with predetermined temperature, and according to comparison result tune
Save the heating electrode.
In a preferred embodiment, adjusting the heating electrode includes described in the temperature measured when the detection-sensitive motor is higher than
When predetermined temperature, then the power of the heating electrode is reduced；And when the temperature that the detection-sensitive motor measures is lower than the predetermined temperature
When spending, then increase the power of the heating electrode.
In a preferred embodiment, adjusting the heating electrode includes described in the temperature measured when the detection-sensitive motor is higher than
When predetermined temperature, then stop the operation of the heating electrode；And when the temperature that the detection-sensitive motor measures is lower than the predetermined temperature
When spending, then the operation of the heating electrode is opened.
In a preferred embodiment, the heating electrode includes multiple heating electrodes, and adjusting the heating electrode includes working as
When the temperature that the detection-sensitive motor measures is higher than the predetermined temperature, then the quantity for the heating electrode being currently running is reduced；
And when the temperature that the detection-sensitive motor measures is lower than the predetermined temperature, then reduce the number for the heating electrode being currently running
Amount.
In a preferred embodiment, adjusting the heating electrode includes that the temperature measured when the detection-sensitive motor is higher than or low
When the predetermined temperature, then different heating electrode combinations is selected to decrease or increase the heating electrode being currently running
General power.
In a preferred embodiment, conducting wire is equipped in the support arm, the conducting wire is used for the multiple electrode and institute
State needle tip connection.
According to the method for the present invention, by accurately controlling the temperature of probe, be able to carry out passivation layer maskless pattern,
Efficiently quick, at low cost and technique simplifies；The structure size precision of formation can reach micro/nano level；Two-dimentional knot can not only be formed
Structure can also form three-dimensional structure.
Detailed description of the invention
Fig. 1 is the schematic top plan view using substrate material according to the method for the present invention；
Fig. 2 is the schematic front view of substrate material shown in FIG. 1；
Fig. 3 is that probe is located at the schematic diagram above the passivation layer of substrate material；
Fig. 4 is the schematic diagram for forming X-Y scheme on the passivation layer of substrate material by probe；
Fig. 5 is the schematic diagram for forming 3-D graphic on the passivation layer of substrate material by probe；
Fig. 6 A is the schematic diagram of probe, and Fig. 6 B is the enlarged diagram of probe tip；
Fig. 7 is that the passivation layer of substrate material is the schematic diagram of oxide layer；
Fig. 8 is that the passivation layer of substrate material is the composite construction that oxide layer is equipped with photoresist；
Fig. 9 is the schematic diagram of the first embodiment of the support arm of probe；
Figure 10 is the schematic diagram of the second embodiment of the support arm of probe；
Figure 11 is the schematic diagram of the 3rd embodiment of the support arm of probe；
Figure 12 is the schematic diagram of the fourth embodiment of the support arm of probe.
Specific embodiment
Presently preferred embodiments of the present invention is described in detail below with reference to attached drawing, it is of the invention to be clearer to understand
Objects, features and advantages.It should be understood that embodiment shown in the drawings does not limit the scope of the present invention, and only it is
Illustrate the connotation of technical solution of the present invention.
In the following description, elaborate certain details to provide for the purpose for illustrating various disclosed embodiments
To the thorough understanding of various open embodiments.But it one skilled in the relevant art will recognize that can be in without these details
One or more details the case where practice embodiment.Under other circumstances, well known device associated with this application, knot
Structure and technology may not be illustrated in detail or describe to avoid unnecessarily obscuring the description of embodiment.
Unless context has other needs, and in the whole instruction and claim, word " comprising " and its modification, such as
"comprising" and " having " should be understood meaning that is open, including, that is, should be interpreted that " including, but are not limited to ".
Expression is in conjunction with the embodiments described to be referred to " one embodiment " or " embodiment " throughout the specification
Certain features, structure or feature are included at least one embodiment.Therefore, in each position of the whole instruction " at one
In embodiment " or " in an embodiment " in appearance without all referring to identical embodiment.In addition, certain features, structure or feature
It can combine in any way in one or more embodiments.
The singular as used in the specification and appended " one " and " described " include plural object, are removed
It is clearly dictated otherwise in non-text.It should be noted that term "or" is usually used with the meaning that it includes "and/or", unless literary
In clearly dictate otherwise.
In the following description, structure and working method of the invention in order to clearly demonstrate, will be by many Directional words
It is described, but should be by the words such as "front", "rear", "left", "right", "outside", "inner", " outside ", " inside ", "upper", "lower"
Language understands for convenience of term, and is not construed as word of limitation.
The method that the present invention relates to a kind of to form 3-D graphic structure on the passivation layer of substrate material.Referring to Fig. 1, show
Various substrate materials such as substrate material 1 and substrate material 2 of applicable the method for the present invention, they are placed on objective table 3.
Substrate material 2 shown in Fig. 1 is square and round, it should be appreciated that substrate material 2 can also in rectangle, ellipse or other do not advise
Then shape.Substrate material 2 can be silicon wafer, sheet glass or potsherd etc..Fig. 2 shows its side views.First in such as substrate material
Passivation layer 5 is prepared on the clean substrate material of material 2.Preferably, being cleaned before preparing passivation layer 5 to substrate material 2.
Specific cleaning method and cleaning step are selected according to the material of substrate material 2.For example, being the feelings of silicon wafer in substrate material 2
Under condition, cleaning step includes heating, boiling, rinsing.Remove surface impurity, oxide or other non-substrate on substrate material 2
The impurity of material, to avoid the impurity effect passivation layer of surface impurity, oxide or other non-substrate materials on substrate material 2
Compactness, robustness, corrosion resistance and the etch resistance of the passivation layer 5 of 5 formation and formation.It is prepared after cleaning is completed
Passivation layer 5.Passivation layer 5 can be formed by oxidation, vapor deposition or coating etc..Passivation layer 5 can be single layer, such as
It is photoresist layer or silica, silicon nitride or metal layer, is also possible to composite layer, such as in silica, silicon nitride or gold
Belong to the composite layer that layer is equipped with photoresist.When stating composite layer in use, photoresist is coated preferably by the mode of spin coating
On the silica, silicon nitride or metal layer being disposed below.The coating method is convenient and efficient, and coats the photoresist layer formed
13 uniformity is good.In the specific implementation, different passivation layers can be selected as needed.
Then, probe 4 is provided, probe 4 includes cantilever part 41 and is located at 41 end of cantilever part and from cantilever part 41
Tip 42 outstanding, as shown in Figure 6.As shown in figure 3, the probe 4 for being used to scan vaporization to be placed in the passivation layer 5 of substrate material 2
Top, then by the tip 42 of probe 4 close to passivation layer 5.
Then heated probe 4, the specifically tip 42 of heated probe 4, are heated to the temperature that can vaporize passivation layer 5
Degree.Specifically, the temperature that the material that tip 42 is heated to 5 upper surface of passivation layer can be vaporized.Passivation for different structure
Layer, the heating temperature is not also identical, for example, heating temperature is 200 DEG C -500 DEG C in the case where passivation layer 5 is photoresist layer,
More generally at 300-400 DEG C.And in the case where passivation layer 5 is metal layer, heating temperature may be up to 1000 DEG C.
When the tip of probe 4 42 is heated to the temperature for enabling passivation layer 5 to vaporize, by probe 4, specifically tip
42 move above passivation layer 5.The mode that tip 42 is moved above passivation layer 5 is mobile similar to scan-type, moves basis
Scheduled 3-D graphic is carried out by control system.Control system can receive sheet template, and be converted into corresponding dynamic
Make signal, so that it is mobile to guide probe to be scanned formula.It is scanned across place at tip 42, passivation layer 5 vaporizes, thus being passivated
3-D graphic is formed on layer 5.Specifically tip 42 be moved to scheduled vertical position in passivation layer 5, and in the vertical position
It is moved horizontally in horizontal plane where setting.After the scanning in the horizontal plane for having carried out a vertical position is mobile, point
End 42 is moved to next vertical position, and moves horizontally in the horizontal plane where next vertical position, so repeats, directly
Extremely scheduled 3-D graphic is formed on passivation layer 5.Since the movement at tip 42 is almost without resistance, by accurately controlling,
Tip 42 can reach 1 nanometer the distance between from a vertical position to next vertical position.
X-Y scheme (see Fig. 4) can either be formed on passivation layer 5 by the above method also can form three on passivation layer 5
It ties up figure (see Fig. 5).Here, X-Y scheme refers to that the figure to be formed is identical in different vertical position sections, and 3-D graphic
Refer to that the figure to be formed is different in different vertical position sections.
It is formed after 3-D graphic on passivation layer 5, the substrate material 2 with patterned passivation layer 5 is put into can be rotten
In the chemical solution for losing passivation layer 5, passivation layer 5 is removed.It is photoresist and silica, silicon nitride or metal layer shape in passivation layer 5
At composite layer in the case where, removal photoresist layer first then removes silicon, silicon nitride or metal layer.After utilizing followed by
Continuous technique, such as diffusion technique, thin-film technique, sacrifice layer process, interconnection process, wet corrosion technique, dry etch process, steaming
Depositing process and sputtering technology etc. process substrate material, and 3-D nano, structure or figure can be formed on substrate material
Shape.
As described above, probe 4 includes cantilever part 41 and is located at 41 end of cantilever part and protrudes from cantilever part 41
Tip 42.The enlarged drawing at tip 42 is also shown in Fig. 6 B.Tip 42 includes pedestal 421, the pedestal 421 and cantilever part 41
It is integrally formed or is fixedly attached to cantilever part 41.Multiple electrodes 425 are equipped in the pedestal 421.Each support arm 423 is from pedestal
421 extend and are connected to needle tip 422 in the end far from pedestal 421.Support arm 422 is made of heat-resisting material.It is supporting
The 422 settable conducting wire in inside of arm, for connecting the electrode in needle tip 422 and pedestal 421.Preferably, support arm 422 is in bending
Shape, to prevent support arm 422 from fractureing due to touching or high temperature.Multiple electrodes 425 are including multiple heating electrodes and extremely
A few temperature-sensitive electrode.Tip 42 passes through each heating heated by electrodes to required predetermined temperature.Temperature-sensitive electrode is for sensing tip
42 temperature.Sensing electrode can be such as thermistor, determine sensing electrode by measuring the resistance varied with temperature
Temperature.
The temperature control at tip 42 passes through controller, such as PID control (proportional integral differential control) Lai Shixian.To visit
Needle 4 provides controller, measures the temperature at tip 42 by sensing electrode, and by controller by the temperature measured and predetermined temperature ratio
Compared with when the difference of the temperature and predetermined temperature that measure reaches certain numerical value, then by increasing or decreasing the heating electrode of work
Quantity, increase reduce the power of heating electrode and start or stop the work of each heating electrode to adjust tip 42
Temperature.In the case where each heating electrode power is different, different heating electrode combinations can also be selected to reduce as needed
Or increase the general power for the heating electrode being currently running to adjust the temperature at tip 42.
It is shown in Fig. 9-12 and pinpoint structure is carried out to probe 2.Specifically, as shown in figure 9, probe 4 is by bracket 6
Support.Bracket 6 is configured to any structure being supported to the cantilever part of probe 4.In the illustrated embodiment, bracket
6 be the support rod of roughly vertical extension.One end of cantilever part is fixed to bracket 6 and from 6 horizontal extension of bracket, and tip 42 is arranged
In one end of the separate bracket 6 of cantilever part.In this embodiment, cantilever portion point includes cantilever support portion 412 and cantilever drive
Portion 413.The end of the separate bracket 6 in cantilever drive portion 413 is equipped with tip 42.Cantilever drive portion 413 and 412 edge of cantilever support portion
Vertical direction is closely adjacent to each other and is spaced apart.As shown in fig. 7, it is equipped with electromagnetic plate 416 in the downside in cantilever support portion 412, and outstanding
Arm driving portion 413 is arranged below cantilever support portion 412 and position corresponding with electromagnetic plate 416 is equipped with electromagnetic plate on it
71.It when needing to move down in cantilever support portion 412 to move down tip 42, can be powered to electromagnetic plate 416 and 71, make the two magnetic
Property is on the contrary, move down cantilever support portion 412 by the attraction between electromagnetic plate 416 and 71, so that tip 42 be driven to move down.
It when needing to move up in cantilever support portion 412 to move up tip 42, can be powered to electromagnetic plate 416 and 71, keep the two magnetic
It is identical, move up cantilever support portion 412 by the repulsive force between electromagnetic plate 416 and 71, so that tip 42 be driven to move up.?
In illustrated embodiment, the lower section in cantilever support portion 412 is arranged in cantilever drive portion 413, it should be appreciated that can also be by cantilever drive portion
413 are arranged in the top in cantilever support portion 412.In this case, then in the upside and cantilever drive portion in cantilever support portion 412
Electromagnetic plate 416 and 71 is arranged in the position relative to each other of 413 downside.
In addition, one group or more of electromagnetic plate can be arranged in cantilever support portion 412 and cantilever drive portion 413.Such as scheming
Shown in 10, three groups of electromagnetic plates are each provided in the downside of 412 upside of cantilever support portion and cantilever drive portion 413.
It will further be understood that one in every group of electromagnetic plate 416 and 71 can also be set to permanent magnet piece, and another
For electromagnetic plate.
The displacement of tip 42 along the vertical direction is realized using aforesaid way, it can be by accurately adjusting towards electromagnetic plate
Electric current adjusts attraction or the size of repulsive force between cantilever support portion 412 and cantilever drive portion 413, so that tip 42
Displacement accuracy along the vertical direction can significantly improve, and even up to 1 nanometer.
Figure 11 shows another embodiment.In this embodiment, one arranged along its length is equipped on cantilever part
Strain section 417.The strain section 417 is made of multilayer materials.Each layer in multilayer materials has different thermal expansions
Different degrees of expansion or shrinkage deformation occurs for coefficient, when the temperature is changed, layers of material.For example, strain section 417 can be by two kinds
Different material layer is combined.By the temperature of controlled strain section 417, so that bending upward or downward occurs for strain section 417,
Thus it drives cantilever part to move or move down on the whole, and then drives and realize that tip 42 moves up or moves down.In addition, can be in cantilever part
The upper more than one strain section 417 of setting.Such as be shown in FIG. 12, there are three strain section 417 for setting on cantilever part.
The displacement of tip 42 along the vertical direction is realized by using aforesaid way, it can be by controlling accurate system strain section 417
Temperature change carry out the bending of controlled strain section 417 so that the displacement accuracy of tip 42 along the vertical direction can be mentioned significantly
Height, even up to 1 nanometer.
Being shown in above-described embodiment using electromagnetic plate and strain section realizes the tip 42 on cantilever part along vertical side
To mobile embodiment.Cantilever part is realized it should be understood that can also combine on cantilever part using electromagnetic plate and strain section
Move up and move down.
Presently preferred embodiments of the present invention has already been described in detail above, it is understood that if desired, the side of embodiment can be modified
Face provides other embodiment to use the aspect, feature and design of various patents, application and publication.
In view of detailed descriptions above, these and other variation can be made to embodiment.In general, in claim
In, term used should not be construed as limited to specific embodiment disclosed in description and claims, but be understood that
Being includes whole equivalency ranges that all possible embodiment is enjoyed together with these claims.
Claims (6)
1. a kind of method for controlling probe temperature, the probe includes: cantilever part；Tip, the tip are located at described
Cantilever portion distal end is simultaneously prominent from the cantilever part；And controller；Wherein the tip includes pedestal, needle tip and from institute
Multiple support arms of pedestal extension are stated, each support arm is connected to the needle tip in the end far from the pedestal；Wherein
Multiple electrodes are equipped in the pedestal, the multiple electrode includes heating electrode and sensing electrode；
The described method includes:
Pass through tip described in the heating heated by electrodes；
The temperature at the tip is sensed by the sensing electrode；
The temperature for being measured the sensing electrode by the controller adjusts institute compared with predetermined temperature, and according to comparison result
State heating electrode.
2. the method according to claim 1, wherein
Adjusting the heating electrode includes when the temperature that the detection-sensitive motor measures is higher than the predetermined temperature, then described in reduction
Heat the power of electrode；And when the temperature that the detection-sensitive motor measures is lower than the predetermined temperature, then increase the heating electricity
The power of pole.
3. the method according to claim 1, wherein
Adjusting the heating electrode includes when the temperature that the detection-sensitive motor measures is higher than the predetermined temperature, then described in stopping
Heat the operation of electrode；And when the temperature that the detection-sensitive motor measures is lower than the predetermined temperature, then open the heating electricity
The operation of pole.
4. the method according to claim 1, wherein
The heating electrode includes multiple heating electrodes, and adjusting the heating electrode includes the temperature when the detection-sensitive motor measures
When higher than the predetermined temperature, then the quantity for the heating electrode being currently running is reduced；And measured when the detection-sensitive motor
When temperature is lower than the predetermined temperature, then the quantity for the heating electrode being currently running is reduced.
5. the method according to claim 1, wherein adjusting the heating electrode includes when the detection-sensitive motor is surveyed
When the temperature obtained is higher or lower than the predetermined temperature, then different heating electrode combinations is selected to be currently running to decrease or increase
The heating electrode general power.
6. the conducting wire is used for will the method according to claim 1, wherein being equipped with conducting wire in the support arm
The multiple electrode is connect with the needle tip.
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| CN201910427559.5A CN110146726B (en) | 2019-05-22 | 2019-05-22 | Method for controlling temperature of probe |
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| CN201910427559.5A CN110146726B (en) | 2019-05-22 | 2019-05-22 | Method for controlling temperature of probe |
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| CN110146726B CN110146726B (en) | 2022-06-14 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111812357A (en) * | 2020-07-10 | 2020-10-23 | 浙江大学 | Self-filling three-arm type thermal scanning probe for micro-nano manufacturing |
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