CN107064565A - The hot many reference amounts coupling microscope probe of magnetoelectricity, its preparation method and detection method - Google Patents
The hot many reference amounts coupling microscope probe of magnetoelectricity, its preparation method and detection method Download PDFInfo
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- CN107064565A CN107064565A CN201710391075.0A CN201710391075A CN107064565A CN 107064565 A CN107064565 A CN 107064565A CN 201710391075 A CN201710391075 A CN 201710391075A CN 107064565 A CN107064565 A CN 107064565A
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- 239000000523 sample Substances 0.000 title claims abstract description 135
- 230000008878 coupling Effects 0.000 title claims abstract description 18
- 238000010168 coupling process Methods 0.000 title claims abstract description 18
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 5
- 238000001514 detection method Methods 0.000 title claims description 13
- 239000000463 material Substances 0.000 claims abstract description 50
- 230000005291 magnetic effect Effects 0.000 claims abstract description 49
- 230000005619 thermoelectricity Effects 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 15
- 230000005294 ferromagnetic effect Effects 0.000 claims description 13
- 238000004458 analytical method Methods 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 9
- 238000006073 displacement reaction Methods 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910017052 cobalt Inorganic materials 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 6
- 229910021389 graphene Inorganic materials 0.000 claims description 6
- 238000012876 topography Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- 239000004952 Polyamide Substances 0.000 claims description 3
- 244000062793 Sorghum vulgare Species 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 235000019713 millet Nutrition 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- 229920002492 poly(sulfone) Polymers 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- 239000002262 Schiff base Substances 0.000 claims description 2
- 150000004753 Schiff bases Chemical class 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 2
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 229960004643 cupric oxide Drugs 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910001004 magnetic alloy Inorganic materials 0.000 claims description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 2
- 229910000859 α-Fe Inorganic materials 0.000 claims description 2
- 229910000531 Co alloy Inorganic materials 0.000 claims 1
- 229910000640 Fe alloy Inorganic materials 0.000 claims 1
- 229910000990 Ni alloy Inorganic materials 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 claims 1
- 229910052946 acanthite Inorganic materials 0.000 claims 1
- 210000000746 body region Anatomy 0.000 claims 1
- 229910000428 cobalt oxide Inorganic materials 0.000 claims 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims 1
- 238000009833 condensation Methods 0.000 claims 1
- 230000005494 condensation Effects 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 claims 1
- 229940056910 silver sulfide Drugs 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 238000011065 in-situ storage Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000004621 scanning probe microscopy Methods 0.000 description 4
- 238000012512 characterization method Methods 0.000 description 3
- 239000002585 base Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000005381 magnetic domain Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910002902 BiFeO3 Inorganic materials 0.000 description 1
- 229910016411 CuxO Inorganic materials 0.000 description 1
- 229910032387 LiCoO2 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- KAGOZRSGIYZEKW-UHFFFAOYSA-N cobalt(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Co+3].[Co+3] KAGOZRSGIYZEKW-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002465 magnetic force microscopy Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- 238000004647 photon scanning tunneling microscopy Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- FSJWWSXPIWGYKC-UHFFFAOYSA-M silver;silver;sulfanide Chemical compound [SH-].[Ag].[Ag+] FSJWWSXPIWGYKC-UHFFFAOYSA-M 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/08—Probe characteristics
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
- G01Q30/02—Non-SPM analysing devices, e.g. SEM [Scanning Electron Microscope], spectrometer or optical microscope
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/08—Probe characteristics
- G01Q70/14—Particular materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/16—Probe manufacture
Abstract
It is outside from feeler arm and needle point body surface the invention provides a kind of hot many reference amounts coupling microscope probe of magnetoelectricity, including feeler arm, and the needle point body being connected with feeler arm, thermoelectricity double-layer, thermally conductive insulating layer and magnetic conductive layer are covered with successively；Thermoelectricity double-layer constitutes electrothermal circuit with external circuit；Magnetic conductive layer constitutes galvanic circle with sample, external circuit.The probe structure is simple, preparation difficulty is low, is capable of in-situ micro area and detects magnetic signal, electric signal and the thermal signal of magneto-electric functional material, and the signal interference that can be prevented effectively between electrothermal circuit and electrical circuit.
Description
Technical field
The present invention relates to a kind of probe of scanning probe microscopy, a kind of magnetic-electric-thermal many reference amounts coupling is especially related to
Microscope probe, its preparation method and detection method.
Background technology
With the rapid development of information technology, the electronic component of integrated circuit tends to miniaturization and integrated direction hair
Exhibition, the size of electronic component enter in a subtle way/receive yardstick, it generates heat, and to have become restriction with heat dissipation problem further highly integrated
Bottleneck problem.Micro-/to receive the physical property related with heat is characterized under yardstick, understanding the physical process of heating and radiating, to have become the modern times hot
- micro-/the yardstick science of heat of receiving of a brand-new branch in science.It is micro-/receive under yardstick, the microstructure of material and domain structure
The influence of (for magnetic, ferroelectric material) to thermal property is particularly important, micro-crack, hole, crystal boundary or even a domain wall
The thermal property of material may all be had influence on.By taking multi-iron material as an example, magnetic/electricdomain upset under being driven in outfield (or domain wall is moved
It is dynamic) and leakage current can all cause microcell to generate heat.Although people have developed multiple technologies means to study these parameters, simply arrive
So far, also no technology and equipment can carry out in situ-in real time-simultaneous synthesis sign to these parameters, limit to material
Middle heating and the deep understanding of the physical mechanism of radiating, thus can not find out solve material it is micro-/receive the heating and radiating of yardstick
Problem.
Atomic force microscope technology has obtained hair at full speed as a kind of important research nanoscale science and technology research meanses
Exhibition.Scanning probe microscopy technology is high with spatial resolution based on being developed on the basis of PSTM, can
Vacuum, air, even alternating temperature works in a variety of environment such as solution many advantages, such as, it is widely used in physics quickly
The research field such as, chemistry, biology, electronics.People pass through all kinds of interactions between exploratory probe and sample surfaces
The physical quantity such as power or electric current detects the surface topography and other physical characteristics of sample, developed AFM,
The technologies such as magnetic force microscopy, piezoelectricity force microscope, conductive force microscope, can be for detection sample surface morphology, domain structure, micro-
Area's conductance, etc. physical parameter.
In recent years, newly-developed scanning calorimeter probe technique, scanning probe microscopy technique extension to calorifics is studied and led
Domain, realizes and the spatial distribution of the thermal property such as material and device surface micro-area temperature and heat conduction is characterized and studied.Although people
The microcell thermal imaging based on scanning probe microscopy has been developed, but be currently based on the technology and be merely able to solely
Calorifics information is obtained, in-situ synchronization is still unable in real time while obtaining domain structure, ferroelectricity/piezoelectricity domain structure, conductive domain structure
It is not clear particularly with the relevance people of period etc. all multi informations, it is impossible to carry out magnetic-electric-thermal coupling imaging, limit pair
In material generate heat with radiating physical mechanism deep understanding so that can not find out solve material it is micro-/receive yardstick heating with
Heat dissipation problem.
The present invention proposes a kind of novel nano magnetic-electric-thermal many reference amounts coupling microscope probe, will overcome existing single magnetic,
The limitation of electric, hot functional module, develops the probe for having magnetic-electric-thermal property detection concurrently, is equipped with corresponding signal detection and place
Reason system, is possible to realize in-situ characterization magnetic domain, ferroelectric domain, microcell conductance, the change of microcell heating property and its each other
Association.Therefore, in nanometer technical field of measurement and test, Development of Novel nanometer characterization technique, especially probe characterization technique are current
One of study hotspot of Related Research Domain.
The content of the invention
For the above-mentioned state of the art, microscope probe is coupled the invention provides a kind of nano magnetic-electric-thermal many reference amounts, its
It is simple in construction, can many physical parameters such as original position, synchro measure magnetic, electricity, heat, realize the influence rule of magnetic domain, electricdomain to thermal property
Rule research.
The technical scheme is that：A kind of magnetic-electric-thermal many reference amounts coupling microscope probe, including feeler arm, Yi Jiyu
The connected needle point body of feeler arm, the tip of the needle point body is used to contact with sample or noncontact, to measure sample letter
Number；It is characterized in that：From needle point body surface outwards, thermoelectricity double-layer, thermally conductive insulating layer, magnetic conductive layer are followed successively by；
Described thermoelectricity double-layer is covered with the region A and region B of needle point body surface, and needle point body surface is except region A
It is remaining area, non-overlapping regions of region A and region B and in the sophisticated position phase of needle point body with the region outside the B of region
Connection；Overlay area A material is materials A, and overlay area B material is material B, and materials A is different from material B, with external electrical
Road constitutes electrothermal circuit；
Described thermally conductive insulating layer is covered with the remaining area of thermoelectricity double-layer and needle point body surface；
Described magnetic conductive layer is located at heat conductive insulating layer surface, the sophisticated position of needle point body is at least covered with, with sample
Product, external circuit constitute galvanic circle.
The three-dimensional structure of described needle point body is not limited, and can be pyramid, circular cone, terrace with edge, round platform etc..
In order to improve detectivity, preferably, described region A and region B not phases in addition to the sophisticated position of needle point
Connection.
Preferably, feeler arm surface includes region A ' and the non-overlapping region of region B ', region A ' and region B ', region A '
It is connected with region A, region B ' is connected with region B；Described external circuit includes being covered with the materials A on region A ' surfaces,
It is covered with the material B on region B ' surfaces.
Described materials A and material B are conductive, and the two is connected to form loop, during tie point temperature change, thermoelectricity
Electrical potential difference is produced in even loop.Described materials A is not limited, including one kind in metal and semiconductor with excellent conductive performance
Material or two or more combined materials, the metal such as palladium, gold, bismuth (Bi), nickel (Ni), cobalt (Co), potassium (K) and its conjunction
At least one of gold, the semiconductor such as graphite, graphene.Described material B is not limited, including the metal with excellent conductive performance
With a kind of material or two or more combined materials in semiconductor, such as palladium, gold, bismuth (Bi), nickel (Ni), cobalt (Co), potassium
(K) at least one of metal and its alloy such as, the semiconductor such as graphite, graphene.
Described heat conductive insulating has heat conductivity, while having electrical insulating property, its material is not limited, including with certain exhausted
Semiconductor, inorganic material or the organic material of edge performance, such as zinc oxide (ZnO), bismuth ferrite (BiFeO3), cobalt acid lithium
(LiCoO2), nickel oxide (NiO), cobalt oxide (Co2O3), cupric oxide (CuxO), silica (SiO2), silicon nitride (SiNx), two
Titanium oxide (TiO2), tantalum pentoxide (Ta2O5), niobium pentaoxide (Nb2O5), tungsten oxide (WOx), hafnium oxide (HfO2), oxygen
Change aluminium (Al2O3), graphene oxide, amorphous carbon, copper sulfide (CuxS), silver sulfide (Ag2S), non-crystalline silicon, titanium nitride (TiN), poly-
At least one of acid imide (PI), polyamide (PAI), poly- Schiff base (PA), polysulfones (PS) etc..
Described magnetic conductive layer has magnetic and electric conductivity, and its material is not limited, including ferromagnetic metal iron (Fe), cobalt
(Co), nickel (Ni) and magnetic alloy etc..
For the ease of connection external circuit, described ferromagnetic conductive layer can also cover needle point body remove sophisticated position its
His position.As a kind of implementation, during working condition, ferromagnetic conductive layer is contacted with sample, sample ground connection, external circuit connection
Ferromagnetic conductive layer, i.e. external circuit, ferromagnetic conductive layer connect, sample and the earth constitute electrical circuit, for measuring sample
Electric signal.
The method that above-mentioned magnetic-electric-thermal many reference amounts couple microscope probe is prepared present invention also offers a kind of, including it is following
Step：
Step 1：Using magnetron sputtering technique in the region A surfaces deposition materials A of needle point body, in region, B surface is deposited
Material B, obtains thermoelectricity double-layer；
Step 2：Using magnetron sputtering technique or pulsed laser technique on the surface of thermoelectricity double-layer, and needle point this body surface
The remaining area surface in addition to region A and region B in face deposits thermally conductive insulating layer；
Step 3：Using magnetron sputtering technique in heat conductive insulating layer surface deposited magnetic conductive layer.
The pattern, magnetic signal, electricity of sample can be detected using magnetic-electric-thermal many reference amounts coupling microscope probe of the present invention
Signal and thermal signal, its detection method are as follows：
(1) surface topography of sample is detected with magnetic signal
Using contact mode.
That is, probe actuation unit driving probe, makes the tip displacement of its needle point body to sample surfaces initial position, visits
Pin is oriented tip and the sample table millet cake that needle point body is controlled in scanning, scanning process from the initial position to sample surfaces
Contact or oscillation point contact, gather the displacement signal or vibration signal of needle point body, the topography signal of sample are obtained through analysis；
Probe is back to described initial position and raises certain distance upwards, then according to described orientation to sample
Surface is scanned, and is controlled the tip of needle point body to carry out displacement or vibration along described feature image in scanning process, is adopted
Collect the displacement signal or vibration signal of needle point body, the magnetic signal image of sample is obtained through analysis.
(2) the thermal signal detection of sample
The electrothermal circuit of the thermoelectricity double-layer formation closure of external circuit and probe, during tie point temperature change, thermocouple is returned
Electrical potential difference change is produced in road.When the tip of needle point body is in contact with sample surfaces, pass through each coating needle point at tip
Body carries out heat exchange with sample, the electrical potential difference in calorifics loop is changed, acquired, analysis, obtains the heat letter of sample
Number image.
(3) the electric signal detection of sample
The tip of needle point body is in contact with sample surfaces, and external circuit, the magnetic conductive layer of probe, and sample are formed
The electrical return of closure, i.e. electric signal flows into the magnetic conductive layer and sample of probe, forms voltage signal, acquired, point
Analysis, obtains the electric signal image of sample.
Compared with prior art, the present invention uses thermocouple structure, and thermoelectricity double-layer independently constitutes electrothermal circuit with external power,
Testing sample, magnetic conductive layer independently constitute electrical circuit with external power, and thermally conductive insulating layer is led positioned at thermoelectricity resistance layer with magnetic
Between electric layer, effectively obstructed the signal interference between electrothermal circuit and electrical circuit, can to the magnetic signal of magneto-electric functional material,
Electric signal and the detection of thermal signal in-situ micro area, are included in the original position of magnetic signal under micron, nanoscale, electric signal and thermal signal
Microcell is detected.
Brief description of the drawings
Fig. 1 is the feeler arm and needle point body of magnetic-electric-thermal many reference amounts coupling microscope probe in the embodiment of the present invention 1
Positive structure schematic；
Fig. 2 is Fig. 1 side structure schematic diagram；
Fig. 3 is the thermoelectricity double-layer enlarged diagram of needle point body surface shown in Fig. 1；
Fig. 4 is the structural representation of thermoelectricity double-layer shown in Fig. 3 and part external circuit；
Fig. 5 is the structural representation that detecting probe surface shown in Fig. 4 covers thermally conductive insulating layer；
Fig. 6 and 7 is the structural representation of the covering magnetic conductive layer of detecting probe surface shown in Fig. 5.
Wherein：1 feeler arm, 2 needle point bodies, a side of 3 needle point bodies, another side, 5 pins of 4 needle point bodies
The front of sharp body, the back side of 6 needle point bodies, 7 thermally conductive insulating layer, 8 magnetic conductives layer.
Embodiment
The present invention is described in further detail with reference to embodiments, it is pointed out that embodiment described below is intended to
It is easy to the understanding of the present invention, the present invention is not limited in any way.
Embodiment 1：
In the present embodiment, from commercially available uncoated Si probes, its structure as shown in figure 1, including feeler arm 1 and with spy
The connected needle point body 2 of needle arm 1.As shown in Figure 1, 2, needle point body 2 is in tetrahedron pyramidal structure, relative with front by front 5
The back side 6, and two sides 3 and 4 constitute.
As shown in figure 3, the surface of needle point body is divided into region A, region B, and the area in addition to region A and region B
Domain is remaining area.The region that lines are filled in the surface of needle point body in Fig. 3 is region A (that is a, side of needle point body
3), the region of Rectangle filling is region B (that is, another side 4 of needle point body), region A and the non-overlapping regions of region B and
Only it is connected at the sophisticated position of needle point body.
As shown in figure 4, feeler arm surface includes region A ' and region B ', the region of Fig. 4 middle probe arms lines on surface filling
For A ', the region of Rectangle filling is the non-overlapping region of B ', region A ' and region B ' and is not connected with, region A ' and region A phases
Connection, region B ' is connected with region B.
Such as lower caldding layer is prepared in the detecting probe surface.
(1) the uncoated Si probes are cleaned with 50000Hz ultrasonic wave, scavenging period is 5min.
(2) as shown in figure 3, design given shape and the mask plate of size, utilize magnetron sputtering technique or pulse laser
Technology, the A surface evaporation platinum in region, the B surface gold evaporation in region forms thermoelectricity double-layer.Also, as shown in figure 4, in area
Domain A ' surface evaporation platinum, B ' the surface gold evaporation in region constitutes a part for external circuit.Thermoelectricity double-layer is constituted with external circuit
Electrothermal circuit, the thermal signal for measuring sample.
(3) as shown in figure 5, using magnetron sputtering technique or pulsed laser technique on the surface of thermoelectricity double-layer, Yi Jizhen
The surface of the remaining area (that is, the front 5 of needle point body and the back side 6) in addition to region A and region B of sharp body surface is deposited
Silica, obtains thermally conductive insulating layer 7, as shown in the cross-wise lines filling in Fig. 5；
(4) as shown in fig. 6, using magnetron sputtering technique or pulsed laser technique on the surface of thermoelectricity double-layer, in heat conduction
Surface of insulating layer deposition iron-base magnetic conductive layer 8, as shown in grid lines filling in Fig. 6.Ferromagnetic conductive layer connection dispatch from foreign news agency
Road, during working condition, ferromagnetic conductive layer is contacted with sample, and sample ground connection, external circuit connects ferromagnetic conductive layer, i.e.
External circuit, ferromagnetic conductive layer connect, sample and the earth constitute electrical circuit, the electric signal for measuring sample.
When detecting the pattern of sample using probe obtained above with magnetic signal, thermal signal and electric signal, it is detected
Method is as follows：
(1) it is used for the surface topography and magnetic signal for detecting sample
Probe actuation unit drives probe, makes the tip displacement of its needle point body to sample surfaces initial position, probe
Transversely sample surfaces are oriented with tip and the sample table that needle point body is controlled in scanning, scanning process from the initial position
Millet cake is contacted or oscillation point contact, gathers the length travel signal or vibration signal of needle point body, the shape of sample is obtained through analysis
Looks signal；
Probe is back to described initial position and raises certain distance upwards, then according to described transversal orientation pair
Sample surfaces are scanned, controlled in scanning process the tip of needle point body along described feature image carry out length travel or
Vibration, gathers the length travel signal or vibration signal of needle point body, and the magnetic signal image of sample is obtained through analysis；
(2) it is used for the thermal signal for detecting sample
The calorifics loop of the thermoelectricity double-layer formation closure of external circuit and probe, the tie point temperature change at needle point tip
When, Thermocouple Circuit is interior to produce electrical potential difference change；Probe actuation unit driving probe is moved to sample surfaces position, makes needle point
The tip of body is in contact with sample surfaces, and needle point body carries out heat exchange by each coating and sample, makes in calorifics loop
Electric potential signal change, it is acquired, analysis, obtain the thermal signal image of sample；
(3) it is used for the electric signal for detecting sample
Probe actuation unit driving probe is moved to sample surfaces position, makes tip and the sample surfaces phase of needle point body
The electrical return of contact, external circuit, the magnetic conductive layer of probe, and sample formation closure, i.e. electric signal flows into probe
Magnetic conductive layer and sample, form voltage signal, and acquired, analysis obtains the electric signal image of sample.
Embodiment 2：
In the present embodiment, probe structure and Si probe structures in embodiment 1 are essentially identical, it is unique unlike it is described
Step (4) is as follows：
As shown in fig. 7, using magnetron sputtering technique or pulsed laser technique on the surface of thermoelectricity double-layer, in heat conductive insulating
Layer surface deposition iron-base magnetic conductive layer 8, as shown in grid lines filling in Fig. 7.That is, compared with Fig. 6, the iron-based magnetic in Fig. 7
Property the cladding probe tip of conductive layer 8 whole front and coat probe bodies front end, the structure is easy to magnetic conductive layer connection
External circuit.During working condition, ferromagnetic conductive layer is contacted with sample, and sample ground connection, external circuit connects ferromagnetic conductive layer,
That is, external circuit, ferromagnetic conductive layer connect, sample and the earth constitute electrical circuit, the electric signal for measuring sample.
Technical scheme is described in detail embodiment described above, it should be understood that it is described above only
For the specific embodiment of the present invention, it is not intended to limit the invention, all any modifications made in the spirit of the present invention,
Supplement or similar fashion replacement etc., should be included in the scope of the protection.
Claims (10)
1. a kind of magnetic-electric-thermal many reference amounts coupling microscope probe, including feeler arm, and the needle point body being connected with feeler arm,
The tip of the needle point body is used to contact with sample or noncontact, to measure sample signal；It is characterized in that：From needle point body
Surface outwards, is followed successively by thermoelectricity double-layer, thermally conductive insulating layer, magnetic conductive layer；
Described thermoelectricity double-layer is covered with the region A and region B of needle point body surface, and needle point body surface is except region A and area
Region outside the B of domain is remaining area, and region A is connected with the non-overlapping regions of region B and at the sophisticated position of needle point body；
Overlay area A material is materials A, and overlay area B material is material B, and materials A is different from material B, is constituted with external circuit
Electrothermal circuit；
Described thermally conductive insulating layer is covered with the remaining area of thermoelectricity double-layer and needle point body surface；
Described magnetic conductive layer is located at heat conductive insulating layer surface, is at least covered with the sophisticated position of needle point body, with sample, outside
Portion's circuit constitutes galvanic circle.
2. magnetic according to claim 1-electric-thermal many reference amounts coupling microscope probe, it is characterized in that：Described needle point body
Three-dimensional structure include pyramid, circular cone, terrace with edge, round platform.
3. magnetic according to claim 1-electric-thermal many reference amounts coupling microscope probe, it is characterized in that：Described region A with
Region B is not connected with addition to the sophisticated position of needle point.
4. magnetic according to claim 1-electric-thermal many reference amounts coupling microscope probe, it is characterized in that：Feeler arm surface includes
Region A ' and the non-overlapping region of region B ', region A ' and region B ', region A ' are connected with region A, and region B ' is connected with region B
Connect；Described external circuit includes being covered with the materials A on region A ' surfaces, is covered with the material B on region B ' surfaces.
5. magnetic according to claim 1-electric-thermal many reference amounts coupling microscope probe, it is characterized in that：Described materials A choosing
From a kind of material or two or more combined materials in metal and semiconductor with excellent conductive performance；
A kind of materials or two or more group of the described material B in metal and semiconductor with excellent conductive performance
Condensation material.
6. magnetic according to claim 1-electric-thermal many reference amounts coupling microscope probe, it is characterized in that：Described materials A bag
Include one or more kinds of combinations in palladium, gold, bismuth, nickel, cobalt, potassium, graphite, graphene；Described material B include palladium,
One or more kinds of combinations in gold, bismuth, nickel, cobalt, potassium, graphite, graphene.
7. magnetic according to claim 1-electric-thermal many reference amounts coupling microscope probe, it is characterized in that：Described heat conductive insulating
Layer material include zinc oxide, bismuth ferrite, cobalt acid lithium, nickel oxide, cobalt oxide, cupric oxide, silica, silicon nitride, titanium dioxide,
Tantalum pentoxide, niobium pentaoxide, tungsten oxide, hafnium oxide, aluminum oxide, graphene oxide, amorphous carbon, copper sulfide, silver sulfide,
One or more kinds of combinations in non-crystalline silicon, titanium nitride, polyimides, polyamide, poly- Schiff base, polysulfones.
8. magnetic according to claim 1-electric-thermal many reference amounts coupling microscope probe, it is characterized in that：Described magnetic conductive
Layer material includes ferromagnetic metal iron, cobalt, nickel and magnetic alloy.
9. magnetic-electric-thermal many reference amounts according to any claim in claim 1 to 8 couple the preparation of microscope probe
Method, it is characterized in that：Comprise the following steps：
Step 1：Using magnetron sputtering technique needle point body region A surfaces deposition materials A, in region B surface deposition materials
B, obtains thermoelectricity double-layer；
Step 2：Using magnetron sputtering technique or pulsed laser technique on the surface of thermoelectricity double-layer, and needle point body surface
Remaining area surface in addition to region A and region B deposits thermally conductive insulating layer；
Step 3：Using magnetron sputtering technique in heat conductive insulating layer surface deposited magnetic conductive layer.
10. using the magnetic described in any claim in claim 1 to 8-electric-thermal many reference amounts coupling microscope probe detection sample
The method of the pattern of product and magnetic signal, thermal signal and electric signal is as follows：
(1) surface topography of sample is detected with magnetic signal
Using contact mode, the tip displacement of needle point body is to sample surfaces initial position, from the initial position to sample table
Face, which is oriented, controls the tip of needle point body to be contacted with sample table millet cake or oscillation point is contacted in scanning, scanning process, gather
The displacement signal or vibration signal of needle point body, the topography signal of sample is obtained through analysis；
Probe is back to described initial position and raises certain distance upwards, then according to described orientation to sample surfaces
It is scanned, controls the tip of needle point body to carry out displacement or vibration along described feature image in scanning process, gather pin
The displacement signal or vibration signal of sharp body, the magnetic signal image of sample is obtained through analysis.
(2) the thermal signal detection of sample
The electrothermal circuit of the thermoelectricity double-layer formation closure of external circuit and probe, it is electric in Thermocouple Circuit during tie point temperature change
Potential difference changes.When needle point body tip be in contact with sample surfaces when, by tip each coating needle point body and
Sample carries out heat exchange, the electric potential signal in calorifics loop is changed, acquired, analysis, obtains the thermal signal figure of sample
Picture；
(3) the electric signal detection of sample
The tip of needle point body is in contact with sample surfaces, external circuit, the magnetic conductive layer of probe, and sample formation closure
Electrical return, i.e. electric signal flow into probe magnetic conductive layer and sample, formed voltage signal, it is acquired, analysis, obtain
To the electric signal image of sample.
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| CN110146726A (en) * | 2019-05-22 | 2019-08-20 | 季华实验室 | Method for controlling probe temperature |
| CN110333372A (en) * | 2019-07-18 | 2019-10-15 | 中国科学院宁波材料技术与工程研究所 | A kind of magnetic scanning microscope probe and preparation method thereof |
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| CN110146726B (en) * | 2019-05-22 | 2022-06-14 | 季华实验室 | Method for controlling temperature of probe |
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