CN110126106A - Wafer processing method - Google Patents
Wafer processing method Download PDFInfo
- Publication number
- CN110126106A CN110126106A CN201910523988.2A CN201910523988A CN110126106A CN 110126106 A CN110126106 A CN 110126106A CN 201910523988 A CN201910523988 A CN 201910523988A CN 110126106 A CN110126106 A CN 110126106A
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- Prior art keywords
- chip
- face
- wafer processing
- processing method
- cylinder material
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/0053—Control means for lapping machines or devices detecting loss or breakage of a workpiece during lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention provides a kind of wafer processing methods, are related to wafer processing techniques field, and wafer processing method provided by the invention includes: to draw circle processing to obtain cylinder material；Milling processing is so that the end face of cylinder material is smooth, and end face is perpendicular to the axis of cylinder material；Change round processing, using the end face of cylinder material as positioning reference plane, around the periphery of the axis amendment cylinder material of cylinder material；Cylinder material is cut to obtain chip.Wafer processing method provided by the invention alleviates the technical problem that wafer processing yields is lower in the prior art.
Description
Technical field
The present invention relates to wafer processing techniques fields, more particularly, to a kind of wafer processing method.
Background technique
The processing flow of glass wafer generally includes: drawing circle, changes circle, wire cutting, finishing impression, grinding, polishing, cleaning and selected
And etc..Draw circle mostly uses sleeve to drill through cylinder material in block greatly, is changed the periphery of circle processing amendment cylinder material, then
It is circular chip through linear cutter Formation cross-section.In process, cylinder material and chip easily rupture, and produce
The probability of raw rupture increases with the radial dimension of institute's processed wafer and is increased, therefore there are wafers to process the lower technology of yields
Problem.
Summary of the invention
The purpose of the present invention is to provide a kind of wafer processing method, with alleviate in the prior art wafer processing yields compared with
Low technical problem.
In a first aspect, wafer processing method provided by the invention, comprising:
Round processing is drawn, to obtain cylinder material；
Milling processing, so that the end face of the cylinder material is smooth, and the end face is perpendicular to the axis of the cylinder material
Line；
Change round processing, using the end face of the cylinder material as positioning reference plane, the axis around the cylinder material corrects institute
State the periphery of cylinder material；
The cylinder material is cut to obtain chip.
With reference to first aspect, the present invention provides the first possible embodiments of first aspect, wherein described to draw circle
The step of processing includes:
Block is fixed on the carrying end face of base, and pad sets filling between the block and the carrying end face
Object；
The block is cut, to obtain the cylinder material.
With reference to first aspect, the present invention provides second of possible embodiments of first aspect, wherein the wafer
Processing method further include:
Chip described in finishing impression is so that the periphery edge of the chip forms chamfering.
The possible embodiment of second with reference to first aspect, the third the present invention provides first aspect are possible
Embodiment, wherein after the step of the chip described in the finishing impression, the end face for the chip of polishing.
The third possible embodiment with reference to first aspect, the 4th kind the present invention provides first aspect are possible
Embodiment, wherein the step of end face of the polishing chip includes:
The chip is placed between top lap and lower abrasive disk, the top lap and the lower abrasive disk difference are made
Around the axis differential speed rotation of the chip；
Polishing agent is cooled to preset temperature, and polishing agent is poured into leaching between the top lap and lower abrasive disk.
The third possible embodiment with reference to first aspect, the 5th kind the present invention provides first aspect are possible
Embodiment, wherein the wafer processing method further includes the total thickness deviation for detecting the chip；
If the total thickness deviation is more than or equal to 0.5 μm, the end face for the chip that continues to polish.
The 5th kind of possible embodiment with reference to first aspect, the 6th kind the present invention provides first aspect are possible
Embodiment, wherein the step of end face of the polishing chip includes:
The chip is rotated around the axis of the chip, and/or, the end face of the chip is exchanged in overturning.
With reference to first aspect, the present invention provides the 7th kind of possible embodiments of first aspect, wherein the wafer
Processing method further include:
Chip described in alkaline cleaner soaking and washing；
Pure water cleans the chip；
It is dried the chip.
With reference to first aspect, the present invention provides the 8th kind of possible embodiments of first aspect, wherein the cutting
The step of cylinder material includes:
Cylinder material described in wire cutting；
Wherein, wire travelling speed range is 600m/min~700m/min, and thread tension range is 28N~30N, waving angle
0~3deg shakes rate 100deg~120deg.
With reference to first aspect, the present invention provides the 9th kind of possible embodiments of first aspect, wherein the wafer
The optical glass that processing method is 1.7~2.1 using ranges of indices of refraction is raw material.
The embodiment of the present invention bring it is following draw circle processing the utility model has the advantages that using to obtain cylinder material, milling processing with
Keep the end face of cylinder material smooth, and end face is perpendicular to the axis of cylinder material, using the end face of cylinder material as positioning reference plane
It carries out, carries out cutting cylinder material to change round processing to obtain crystalline substance around the periphery of the axis amendment cylinder material of cylinder material
The mode of piece is processed the flatness for improving cylinder material end face by milling, and guarantees cylinder material end face and cylinder material
The verticality of axis, so that the probability for change around the axis of cylinder material material generation rupture in round process is reduced, into
And improve yields.
To enable the above objects, features and advantages of the present invention to be clearer and more comprehensible, preferred embodiment is cited below particularly, and cooperate
Appended attached drawing, is described in detail below.
Detailed description of the invention
Technical solution in order to illustrate more clearly of the specific embodiment of the invention or in the related technology, below will be to specific
Attached drawing needed in embodiment or description of Related Art is briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is the flow chart of wafer processing method provided in an embodiment of the present invention.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation,
It is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, term " first ", " second ",
" third " is used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.
Embodiment one
As shown in Figure 1, wafer processing method provided in an embodiment of the present invention, comprising: round processing is drawn, to obtain cylinder
Material；Milling processing, so that the end face of cylinder material is smooth, and end face is perpendicular to the axis of cylinder material；Change round processing, with cylinder
The end face of material is positioning reference plane, around the periphery of the axis amendment cylinder material of cylinder material；Cylinder material is cut to obtain
Obtain chip.
Specifically, it uses cross sectional shape to drill through cylinder material in block for the cutter of annular, uses milling cutter or grinding wheel
The axial end face of grinding cylinder material, so that end face of the axis of cylinder material perpendicular to cylinder material.Cutting or grinding cylinder
The periphery of material using the axial end face of cylinder material as the fixed cylinder material in benchmark face, and makes to change dise knife tool around cylinder material
Axis cutting or grinding cylinder material, due to the axis of cylinder material at this time level off to the end face of cylinder material it is vertical, into
And change dise knife tool and be uniformly distributed relative to the feeding dynamics of cylinder material along the circumferential direction of cylinder material, it is possible thereby to avoid cylinder
Material generates rupture in changing round process.
It should be noted that the section circularity of cylinder material can be improved by changing circle processing, along parallel after being changed circle processing
It is circular chip that in the direction of cylinder material circumferential end faces, cutting cylinder material, which can get cross sectional shape,.Hereafter without being to improve
Wafer cross-section circularity and use machining, and then can to avoid because chip circumferential size it is smaller, machining easily causes chip
The technical issues of sliver；That is, the relatively thin machining of chip easily causes chip chipping or sliver, to cylinder before cutting forms chip
Material carries out changing round processing, without carrying out the biggish machining of the amount of feeding to chip, it is possible thereby to improve Wafer yield
Rate.
In embodiments of the present invention, draw circle processing the step of include: block is fixed on the carrying end face of base, and
Pad sets filler between block and carrying end face；Block is cut to obtain cylinder material.
Specifically, drawing circle processing using cube block as raw material, circle is drilled through in block by the cutter that section is annular
Column material.It needs that first block is fixed on the carrying end face of base in the process, due between block and the carrying end face of base
There are gaps, and in drawing round process, cutter applies active force to block and easily generates in the side of block towards carrying end face
Chipping, pad sets filler between block and carrying end face thus, is filled up between block and the carrying end face of base with filler
Gap, so as to avoid drawing circle processing when generate chipping bad phenomenon.Wherein, filler includes: foam pad or atom
Ash is located between block and the carrying end face of base by foam pad or poly-putty base pad, when the cutter that section is annular is in block
When drilling through cylinder material on material, foam pad or poly-putty base are compressed between block and the carrying end face of base, pass through foam
Pad or poly-putty base carry block, so that block be avoided to generate phenomenon of bursting apart due to there are gap towards the side of carrying end face.
Further, wafer processing method further include: finishing impression chip, so that the periphery edge of chip forms chamfering.Its
In, through drawing periphery of the end face perpendicular to cylinder material for the cylinder material that circle processing obtains, thus in the end face of cylinder material
The arris of cracky is formed with periphery intersection.So that the periphery edge of chip is formed chamfering by finishing impression, and then can solve
The technical issues of certainly stress is concentrated at arris can avoid chip during following process because of chipping caused by colliding at arris.This
Outside, chamfering can reduce the sharpness of Waffer edge, and then chip is avoided to scratch operator when installing and using.
For processing diameter of section as the chip of 150mm, drawing circle processing and drilling through diameter of section in block is 157mm's
Cylinder material, and the axial dimension of cylinder material is 45mm, being changed circle processing can make the diameter of section of cylinder material reach 151mm
~152mm can make the diameter of section of chip reach 150mm to meet technology needs through finishing impression.When cutting cylinder material, it can be used
Multi-line cutting machine cuts cylinder material, to efficiently obtain more wafers.
Further, after the finishing impression chip the step of, the end face for chip of polishing.Overall thickness for reduction chip end face is inclined
Difference can be such that chip end face successively throws through corase grinding, middle mill, fine grinding, just throwing, middle throwing and essence, when polishing chip end face, chip end face
Arris at vulnerable to power generate stress concentrate, be thus also easy to produce chipping problem.It polishes after the finishing impression chip the step of end of chip
Face so as to avoid grinder and polishing machine from acting on the arris of chip, and then can generate to avoid chip chipping problem.
Further, polish chip end face the step of include: that chip is placed between top lap and lower abrasive disk, make
The axis differential speed rotation of top lap and lower abrasive disk rotating around chip；Polishing agent is cooled to preset temperature, and by polishing agent
Leaching is poured between top lap and lower abrasive disk.
Specifically, using twin grinder carry out chip end face polish, make abrasive disk big side dish-type control 8 μm with
Interior, thus small side dish-type control can be such that the total thickness deviation of chip controls within 2 μm within 4 μm.Twin grinder it is upper
Abrasive disk and lower abrasive disk are metal casting, can be generated in bruting process amount of heat, top lap and lower abrasive disk by
Can be expanded after heat, to influence the planarization of operative end surface, thus using polishing agent to top lap and lower abrasive disk into
Row cooling.In the container side wall for containing polishing agent, cooling water channel is set, make the temperature of polishing agent between 17 degrees Celsius in the process and
Between 22 degrees Celsius, and then avoid in process because the overall thickness of chip caused by top lap and lower abrasive disk temperature distortion is inclined
Difference increases.
For using the gloomy equipment of Two sides milling and polishing forever, the technological parameter of grinding and polishing process is referring to following table.
Wherein, top lap and lower abrasive disk polish to chip end face with a constant-speed ratio, so that it is guaranteed that top lap
It is relatively uniform with the abrasion of lower abrasive disk, and then guarantee the planarization of top lap and lower grinding side surface.In addition, can be ground upper
Groove is arranged in mill and lower grinding panel surface, so that polishing agent can be flowed along groove, and then improves top lap and lower grinding
The cooling efficiency of disk.
Further, wafer processing method further includes the total thickness deviation for detecting chip；If total thickness deviation is more than or equal to
0.5 μm, then continue the end face of polishing chip.The total thickness deviation of chip is less than 0.5 μm, so as to improve diffraction grating exposure
Dimension of picture uniformity and consistency.
Further, polish chip end face the step of include: around chip axis rotate chip, and/or, overturning is exchanged
The end face of chip.Wherein, chip can be rotated around the axis of chip in preset time, alternatively, exchanging chip in preset time overturning
End face, to change abrasive disk to the active position of chip end face, to be able to bear each position on chip end face
More balanced burnishing action, to reduce total wafer thickness deviation.Chip is detected using laser interferometer, until overall thickness is inclined
Difference is less than 0.5 μm, and gradient is less than 20 microradians.In addition, by carrying out multiple turn-over and position to chip in grinding and polishing
It exchanges, angularity face type can gradually be repaired, so that chip is finally reached angularity less than 20 μm, curvature is less than 10 μ
m。
Further, wafer processing method further include: alkaline cleaner soaking and washing chip；Pure water cleans chip；It is dry
Handle chip.After examining the total thickness deviation of chip to reach preset standard, alkaline cleaner is successively carried out to chip and is impregnated clearly
It washes, pure water overflow rinsing, spray cleaning and drying, to remove the impurity adhered on chip.It should be noted that clear brilliant
The alkaline cleaner that hydrogen ionexponent is greater than 12 is generallyd use when piece, using the side for heating and increasing sonic oscillation when cleaning
Formula cleans chip, and since the glass material with high index is easily corroded, heating and sonic oscillation are easy under strong alkali environment
Wafer surface is caused to be corroded.For this purpose, making chip impregnate certain time in release agent when cleaning chip, no longer being added
Heat and sonic oscillation, so that chip be avoided to be corroded.
Further, the step of cutting cylinder material includes: wire cutting cylinder material；Wherein, wire travelling speed range is
600m/min~700m/min, thread tension range be 28N~30N, 0~3deg of waving angle, shake rate 100deg~
120deg.For the chip for being 6 inches to process diameter, usual clipping time needs 10 hours or more；Using high bird 812SD line
Cutting machine, and make wire travelling speed range 600m/min~700m/min, thread tension range is 28N~30N, waving angle 0
~3deg shakes rate 100deg~120deg, and then cutting can be completed within 7 hours, and the angularity of chip is less than
26 μm, chip processing efficiency is so greatly improved.
The optical glass that wafer processing method provided in an embodiment of the present invention is 1.7~2.1 using ranges of indices of refraction is raw material.
To process diameter dimension range for 140mm~210mm, for the chip of axial width 0.1mm~3mm, using ranges of indices of refraction
Optical glass for 1.7~2.1 is Raw material processing chip, and makes the total thickness deviation of chip less than 0.5 μm, and gradient is micro- less than 20
Radian, angularity is less than 20 μm, and curvature is less than 10 μm, in the color solid image of the AR video glass using optical waveguide technique
In Transmission system, substrate of glass using this glass wafer as nanoscale diffraction grating pattern, so as to so that field angle reaches
To 30 degree~40 degree, and then enhance the feeling of immersion and the sense of reality of AR video glass user.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of wafer processing method characterized by comprising
Round processing is drawn, to obtain cylinder material；
Milling processing, so that the end face of the cylinder material is smooth, and the end face is perpendicular to the axis of the cylinder material；
Change round processing, using the end face of the cylinder material as positioning reference plane, the axis around the cylinder material corrects the circle
The periphery of column material；
The cylinder material is cut to obtain chip.
2. wafer processing method according to claim 1, which is characterized in that it is described draw circle processing the step of include:
Block is fixed on the carrying end face of base, and pad sets filler between the block and the carrying end face；
The block is cut to obtain the cylinder material.
3. wafer processing method according to claim 1, which is characterized in that the wafer processing method further include:
Chip described in finishing impression, so that the periphery edge of the chip forms chamfering.
4. wafer processing method according to claim 3, which is characterized in that after the step of the chip described in the finishing impression,
It polishes the end face of the chip.
5. wafer processing method according to claim 4, which is characterized in that the step of the end face of the polishing chip
Include:
The chip is placed between top lap and lower abrasive disk, makes the top lap and the lower abrasive disk rotating around institute
State the axis differential speed rotation of chip；
Polishing agent is cooled to preset temperature, and the polishing agent is poured into leaching between the top lap and lower abrasive disk.
6. wafer processing method according to claim 4, which is characterized in that the wafer processing method further includes detection institute
State the total thickness deviation of chip；
If the total thickness deviation is more than or equal to 0.5 μm, the end face for the chip that continues to polish.
7. wafer processing method according to claim 6, which is characterized in that the step of the end face of the polishing chip
Include:
The chip is rotated around the axis of the chip, and/or, the end face of the chip is exchanged in overturning.
8. wafer processing method according to claim 1, which is characterized in that the wafer processing method further include:
Chip described in alkaline cleaner soaking and washing；
Pure water cleans the chip；
It is dried the chip.
9. wafer processing method according to claim 1, which is characterized in that the step of cutting cylinder material includes:
Cylinder material described in wire cutting；
Wherein, wire travelling speed range be 600m/min~700m/min, thread tension range be 28N~30N, waving angle 0~
3deg shakes rate 100deg~120deg.
10. wafer processing method according to claim 1, which is characterized in that the wafer processing method is with refractive index model
Enclosing for 1.7~2.1 optical glass is raw material.
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| CN201910523988.2A CN110126106B (en) | 2019-06-17 | 2019-06-17 | Wafer processing method |
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| CN110625835A (en) * | 2019-09-12 | 2019-12-31 | 西安奕斯伟硅片技术有限公司 | Silicon wafer forming processing method |
| CN114227173A (en) * | 2021-12-30 | 2022-03-25 | 中航工业南京伺服控制***有限公司 | Process method for improving machining efficiency of jet sheet |
| CN115256061A (en) * | 2022-08-19 | 2022-11-01 | 潘芳琳 | Microcrystalline cover plate production process |
| CN115415896A (en) * | 2022-08-19 | 2022-12-02 | 潘芳琳 | Wafer production process |
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| CN110126106B (en) | 2021-09-24 |
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