CN205354051U - M face sapphire wafer , fingerprint identification apron and fingerprint identification module - Google Patents
M face sapphire wafer , fingerprint identification apron and fingerprint identification module Download PDFInfo
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- CN205354051U CN205354051U CN201520932984.7U CN201520932984U CN205354051U CN 205354051 U CN205354051 U CN 205354051U CN 201520932984 U CN201520932984 U CN 201520932984U CN 205354051 U CN205354051 U CN 205354051U
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Abstract
The utility model belongs to the technical field of fingerprint identification, the utility model provides a M face sapphire wafer, M face sapphire wafer's angularity is 0~15 mu m. The utility model provides a M face sapphire wafer's angularity is less, can be better be applied to in the fingerprint identification module to compare in current C face sapphire, the utility model provides a protection apron dielectric constant that M face sapphire wafer made is higher, and response speed is faster. Experiment results show that, the utility model provides a response speed of fingerprint identification apron only has 0.43s. The utility model also provides a fingerprint identification apron and fingerprint identification module, protection apron in the fingerprint identification module is lapped for above -mentioned fingerprint identification.
Description
Technical field
This utility model belongs to fingerprint identification technology field, particularly relates to a kind of M surface sapphire wafer, fingerprint recognition cover plate and fingerprint recognition module.
Background technology
Along with people's demand to smart mobile phone security performance; and the progressively development of internet payment platform and perfect; except concluding the business except password; fingerprint recognition payment function is increasingly subject to the favor of domestic and international cell phone manufacturer; relatively reliable safety and convenience can be brought to mobile-phone payment; fingerprint recognition parts will progressively become the standard configuration parts of smart mobile phone future; therefore; adopt which kind of material to go to make fingerprint recognition massage protection cover plate and can meet the demand of fingerprint recognition corresponding speed and sensitivity, one of this technical research problem having become mobile phone vendor and substrate processing factory.
IPhone5S/6 smart mobile phone has adopted c-plane sapphire wafer as the cover plate materials of its fingerprint recognition button (Home key) at present；C-plane sapphire crystal is by cutting polishing processing; and after cut, silk-screen and plated film, it is made into cover sheet finished product; assembly plant is installed in the outermost of fingerprint recognition button as cover sheet, and existing IPhone5S/6 smart mobile phone fingerprint recognition module includes soft-touch control, tactile sensor, detection ring and cover sheet successively.
IPhone5S/6 smart mobile phone adopts c-plane sapphire wafer as the cover plate materials of fingerprint recognition button, it is due to sapphire material hardness height damage resistant, and c-plane sapphire dielectric constant is compared the other materials such as glass, resin and is wanted height, it is more suitable for being applied on fingerprint recognition button, but it is as developing rapidly of recent cell phone internet payment function, the demand of fingerprint recognition response speed can be promoted by user accordingly, adopts the response speed (0.52s) of c-plane sapphire cover plate cannot meet the higher demand of user gradually.
Utility model content
This utility model provides a kind of M surface sapphire wafer, fingerprint recognition cover plate and fingerprint recognition module, and the fingerprint recognition cover plate response speed that the M surface sapphire wafer that this utility model provides is made is faster.
This utility model provides a kind of M surface sapphire wafer, and the angularity of described M surface sapphire wafer is 0～15 μm.
Preferably, the angularity of described M surface sapphire wafer is 1～14 μm.
Preferably, the specification of described M surface sapphire wafer is 2 inches.
This utility model provides a kind of fingerprint recognition cover plate, and described fingerprint recognition cover plate is obtained by the processing of above-mentioned M surface sapphire wafer.
Preferably, described fingerprint recognition cover plate is rectangle, square or circular.
Preferably, described rectangle fingerprint recognition cover plate has chamfering；
The R angle of described rectangle fingerprint recognition cover plate is 1～2mm.
Preferably, described square fingerprint recognition cover plate has R angle；
The R angle of described foursquare fingerprint recognition cover plate is 1～2mm.
Preferably, the thickness of described fingerprint recognition cover plate is 0.15～0.4mm.
Preferably, the area of described fingerprint recognition cover plate is 0.1～20cm2。
This utility model provides a kind of fingerprint recognition module, and wherein, described cover sheet is above-mentioned fingerprint recognition cover plate.
This utility model provides a kind of M surface sapphire wafer, and the angularity of described M surface sapphire wafer is 0～15 μm.The angularity of the M surface sapphire wafer in this utility model is less; when adopting identical fingerprints identification module chip and same thickness cover plate; compared to existing c-plane sapphire cover sheet; the cover sheet response speed that in this utility model, M surface sapphire wafer is made faster, and can better be applied in fingerprint recognition module.Test result indicate that, the response speed of the fingerprint recognition cover plate that the M surface sapphire wafer in this utility model is made only has 0.43s.
Accompanying drawing explanation
In order to be illustrated more clearly that this utility model embodiment or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in the following describes is only embodiment of the present utility model, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to the accompanying drawing provided.
Fig. 1 is the side view of sapphire crystal；
Fig. 2 is the structural representation of fingerprint recognition cover plate in this utility model embodiment 1；
Fig. 3 is the angularity schematic diagram of 2 inches of M surface sapphire cutting blades in this utility model embodiment 1.
Detailed description of the invention
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is clearly and completely described, it is clear that described embodiment is only a part of embodiment of this utility model, rather than whole embodiments.Based on the embodiment in this utility model, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of this utility model protection.
This utility model provides a kind of M surface sapphire wafer, and the angularity of described M surface sapphire wafer is 0～15 μm.
The fingerprint recognition cover plate that the M surface sapphire wafer that this utility model provides is made has response speed faster.
In this utility model, the corresponding relation in sapphire crystal plane structure and M face, C face and A face is as it is shown in figure 1, Fig. 1 is the side view of sapphire crystal, the angularity of described M surface sapphire wafer is 0～15 μm, it is preferably 1～14 μm, more preferably 5～10 μm, it is most preferred that be 6～8 μm；The Mohs' hardness of described M surface sapphire wafer is 9 grades, has excellent anti-scratch performance and light transmission；The specification of described M surface sapphire wafer is 2 inches.
The fingerprint recognition cover plate that this utility model provides is obtained by the processing of above-mentioned M surface sapphire wafer, and the dielectric constant of described fingerprint recognition cover plate is preferably 11～12, more preferably 11.52；The response speed of described fingerprint recognition cover plate is 0.43s.
The size and dimension of described fingerprint recognition cover plate is not had special restriction by this utility model, it can be rectangle, square or circular, concrete, in embodiment of the present utility model, can for the shape shown in Fig. 2, Fig. 2 is the structural representation of fingerprint recognition cover plate in this utility model embodiment 1；The area of described fingerprint recognition cover plate is preferably 0.1～20cm2, more preferably 0.2～18cm2, it is most preferred that it is 0.5～15cm2；The thickness of described fingerprint recognition cover plate is preferably 0.15～0.4mm, more preferably 0.26mm；When described fingerprint recognition cover plate is rectangle or square, described fingerprint recognition cover plate has chamfering, and described R angle is preferably 1～2mm, more preferably 1.2～1.8mm.
Fingerprint recognition cover plate in this utility model preferably prepares according to following steps:
After M surface sapphire crystal bar is sequentially carried out line cutting, grinding, chemically mechanical polishing and cut, obtain fingerprint recognition cover plate；
The linear velocity of described line cutting is 360～380mm/min, and the speed of table of described line cutting is 16～16.8mm/ hour；
The power of described cut is 15～30%；The frequency of described cut is 500～700Hz；The pulse width of described cut is 0.1～0.2ms；The cutting speed of described cut is 4～6mm/s.
Before this utility model cuts preferably in described line, first inspection M surface sapphire crystal bar, and described M surface sapphire is carried out sizing, then described M surface sapphire is being carried out line cutting, in this utility model, the linear velocity of described line cutting is 360～380mm/min, it is preferred to 365～375mm/min；The speed of table of described line cutting is 16～16.8mm/ hour, it is preferred to 16.3～16.5mm/ hour；The line tension of described line cutting is preferably 30～40N, more preferably 35～38N；The waving angle of described line cutting is preferably 4～6 °/min, more preferably 5 °/min.In this utility model, what warp cutting obtained is the M surface sapphire wafer of 2 inches.
In this utility model, when described M surface sapphire compares c-plane sapphire cutting on line, the angularity produced can be bigger than normal, the processing quality of follow-up grinding and chemically mechanical polishing can be directly affected, this utility model decline cutting speed in the reasonable scope is conducive to line of cut uniformly to consume, the angularity (warp is up to less than 15 μm) of wafer, thickness scattered error all can be greatly improved, it is possible to the processing quality requirement of operation after meeting.
After completing line cutting, the M surface sapphire wafer after the cutting of described line is preferably sequentially carried out cleaning and bevelling by this utility model, is then being ground, the M surface sapphire wafer after being ground.In this utility model, described cleaning and bevelling are technological means well known to those skilled in the art, and described grinding is preferably twin grinding, and described twin grinding is the conventional processing method of those skilled in the art.
After completing described grinding, the M surface sapphire wafer after grinding preferably is sequentially carried out cleanings, anneals, cleans, waxes by this utility model, copper is thrown and cleaning, is then being carried out chemically mechanical polishing.In this utility model, the cleaning, the annealing that carry out after described grinding, before chemically mechanical polishing, clean, wax, copper throws and cleaning is technological means well known to those skilled in the art, do not repeat them here.
In this utility model, described chemically mechanical polishing (CMP planarization) preferably includes preliminary polishing and trimming polishing successively, before preliminary polishing, polishing cloth is preferably first modified by this utility model with diamond ingot, particularly as follows: first dry finishing 6min clockwise, repair 6min counterclockwise adding water, then carry out follow-up preliminary polishing and trimming polishing.In the process of described preliminary polishing and trimming polishing, preferably employing silicon oxide polishing fluid, in described silicon oxide polishing fluid, the mean diameter of silicon oxide is preferably 100～130nm, more preferably 110～120nm, the pH value of described silicon oxide polishing fluid is preferably 11.5～12.5, more preferably 12.In this utility model, the polish pressure of described preliminary polishing is preferably 400～460g/cm2, more preferably 410～450g/cm2, it is most preferred that it is 420～440g/cm2；The rotating speed of described preliminary polishing is preferably 55～65rpm, 58～63rpm；The temperature of described preliminary polishing is preferably 50～60 DEG C, more preferably 51～57 DEG C, it is most preferred that be 53～55 DEG C；The polish pressure of described trimming polishing is preferably 200～250g/cm2, more preferably 210～240g/cm2, it is most preferred that it is 220～230g/cm2；The rotating speed of described trimming polishing is preferably 30～38rpm, more preferably 33～35rpm；The temperature of described trimming polishing is preferably 50～60 DEG C, more preferably 51～57 DEG C, it is most preferred that be 53～55 DEG C
This utility model research finds, it is more corrosion-resistant that M surface sapphire compares c-plane sapphire, causes adopting conventional sapphire glossing to be very difficult to remove size (being namely difficult to throwing bright), removes speed too low (average 0.5 μm/h), polishing time is long, and processing cost is too high.This utility model adopts special card finishing mode and technological parameter, makes M surface sapphire polishing efficiency be increased dramatically, on average can reach 2.5 μm/h, is 5 times of traditional handicraft efficiency, and surface quality is good, thus reducing its processing cost.
After completing described chemically mechanical polishing, the M surface sapphire wafer of described chemically mechanical polishing is preferably carried out and checks by this utility model, then carries out cut.In this utility model, described cut carries out preferably under protective gas atmosphere, and described protective gas is preferably one or more in nitrogen, helium, neon and argon；The concentration of described protective gas is preferably 99.9～99.999%；The pressure of described protective gas is preferably 6.7～7.2MPa, more preferably 6.8～7.0MPa.Carrying out cut under the protective gas atmosphere of this concentration and this pressure is conducive to the continuous zigzag improving M surface sapphire lens edge collapse limit and burn continuously a little.In this utility model, the power of described cut is 15～30%, it is preferred to 20～25%；The frequency of described cut is preferably 500～700Hz, it is preferred to 550～650Hz, more preferably 600Hz；The pulse width of described cut is 0.1～0.2ms, it is preferred to 0.15ms；The cutting speed of described cut is 4～6mm/s, it is preferred to 5mm/s.
This utility model research finds; when adopting conventional laser cutting technique cutting M surface sapphire wafer; it is bad that Waffer edge very easily produces to collapse limit; cause that processing yield is low; this utility model adopts specific protective gas condition and technological parameter, it is possible to being effectively improved edge quality and the cutting efficiency of cut crystal, in this utility model, cut yield improves more than 10%; up to more than 95%, the processing of follow-up silk-screen is also provided that quality guarantee.
After completing described cut, the M surface sapphire wafer after described cut is sequentially carried out cleaning, inspection, cleaning, silk-screen, cleaning and inspection by this utility model, obtains fingerprint recognition cover plate.In this utility model, described cleaning, inspection, cleaning, silk-screen, cleaning and inspection are the technological means that those skilled in the art commonly use.
The fingerprint recognition lid surface obtained preferably is plated one layer of AF film (high anti-fingerprint AF film thoroughly) by this utility model, to prevent fingerprint and dust.In this utility model, the method for described AF film and plating AF film is technological means well known to those skilled in the art.
This utility model additionally provides a kind of fingerprint recognition module, and the cover sheet in described fingerprint recognition module is above-mentioned fingerprint recognition cover plate.The kind of the miscellaneous part such as sensor, soft-touch control in described fingerprint recognition module and source are not had special restriction by this utility model, adopt conventional.
This utility model adopts touch-switch, fingerprint Identification sensor, driving ring, sapphire cover sheet; the cover plate being respectively mounted the M surface sapphire in c-plane sapphire, A surface sapphire and this utility model prepared responds velocity test; result shows; the response speed of c-plane sapphire is 0.52s; the response speed of A surface sapphire is 0.50s, and the response speed of the M surface sapphire fingerprint recognition cover plate in this utility model is 0.43s.
This utility model provides a kind of M surface sapphire wafer, and the angularity of described M surface sapphire wafer is 0～15 μm.The angularity of the M surface sapphire wafer in this utility model is less, it is possible to be better applied in fingerprint recognition module, and compared to existing c-plane sapphire, the cover sheet response speed that in this utility model, M surface sapphire wafer is made is faster.Test result indicate that, in this utility model, the response speed of the fingerprint recognition cover plate that M surface sapphire wafer is made only has 0.43s.
Embodiment 1
M surface sapphire crystal bar is bonded on flitch, adopts Japanese high bird wire cutting machine to carry out line cutting, obtain 2 inches of M surface sapphire wafers, line cutting speed 380mm/min, speed of table 16.8mm/ hour, line tension 35N, 5 °/min of waving angle；
By bevelling after 2 inches of M surface sapphire wafer cleanings, then adopt double-side rough grinding machine to carry out twin grinding, clean after grinding, anneal in the constant temperature oven of 1780 DEG C 48 hours, clean after waxing again, adopt copper dish buffing machine to carry out copper throwing the wafer waxed.
Wafer after copper throwing adopts chemical-mechanical polishing mathing to carry out CMP planarization, first with diamond ingot, polishing cloth is repaired before polishing, first dry finishing 6min clockwise, add water and repair 6min counterclockwise, adopt mean diameter at the silicon oxide polishing fluid of 120nm, the course of processing make pH value control 12 ± 0.5, with 400g/cm2Pressure, 55rpm rotating speed first tentatively polish, and by installing electromagnetic valve on equipment additional, accurately control polish temperature within the scope of 54 ± 3 DEG C, after preliminary polishing, adopt 220g/cm2Low pressure repair throwing wafer surface；
Carrying out cut under the nitrogen atmosphere that concentration is 99.999% after cleaning, the pressure of nitrogen is 6.7MPa, and cutting speed is 5mm/s, and power is 20%, and frequency is 600Hz, and pulse width is set to 0.15ms, and cutting yield is 95%.
Obtain small pieces wafer after cut, by silk-screen, plating AF film after small pieces wafer cleaning, obtain fingerprint recognition cover plate.
This utility model determines the response speed of the fingerprint recognition cover plate that the present embodiment obtains, it is shown that the response speed of fingerprint recognition cover plate that the present embodiment obtains is 0.43s.
This utility model determines the angularity of 2 inches of M surface sapphires that the present embodiment obtains, and result is as it is shown on figure 3, angularity schematic diagram that Fig. 3 is 2 inches of M surface sapphires in this utility model embodiment 1.It is shown that the angularity of 2 inches of M surface sapphires that the present embodiment obtains is 11.01 μm.
Embodiment 2
M surface sapphire crystal bar is bonded on flitch, adopts Japanese high bird wire cutting machine to carry out line cutting, obtain 2 inches of M surface sapphire wafers, line cutting speed 375mm/min, speed of table 16.5mm/ hour, line tension 40N, 5 °/min of waving angle；
By bevelling after 2 inches of M surface sapphire wafer cleanings, then adopt double-side rough grinding machine to carry out twin grinding, clean after grinding, anneal in the constant temperature oven of 1780 DEG C 48 hours, clean after waxing again, adopt copper dish buffing machine to carry out copper throwing the wafer waxed.
Wafer after copper throwing adopts chemical-mechanical polishing mathing to carry out CMP planarization, first with diamond ingot, polishing cloth is repaired before polishing, first dry finishing 6min clockwise, add water and repair 6min counterclockwise, adopt mean diameter at the silicon oxide polishing fluid of 120nm, the course of processing make pH value control 12 ± 0.5, with 460g/cm2Pressure, 65rpm rotating speed first tentatively polish, and by installing electromagnetic valve on equipment additional, accurately control polish temperature within the scope of 54 ± 3 DEG C, after preliminary polishing, adopt 200g/cm2Low pressure repair throwing wafer surface；
Carrying out cut under the nitrogen atmosphere that concentration is 99.999% after cleaning, the pressure of nitrogen is 7.2MPa, and cutting speed is 5mm/s, and power is 15%, and frequency is 500Hz, and pulse width is set to 0.1ms, and cutting yield is 95%.
Obtain small pieces wafer after cut, by silk-screen, plating AF film after small pieces wafer cleaning, obtain fingerprint recognition cover plate.
This utility model determines the response speed of the fingerprint recognition cover plate that the present embodiment obtains, it is shown that the response speed of fingerprint recognition cover plate that the present embodiment obtains is 0.43s.
This utility model determines the angularity of 2 inches of M surface sapphires that the present embodiment obtains, it is shown that the angularity of 2 inches of M surface sapphires that the present embodiment obtains is 11.01 μm.
Embodiment 3
M surface sapphire crystal bar is bonded on flitch, adopts Japanese high bird wire cutting machine to carry out line cutting, obtain 2 inches of M surface sapphire wafers, line cutting speed 380mm/min, speed of table 16.8mm/ hour, line tension 35N, 5 °/min of waving angle；
By bevelling after 2 inches of M surface sapphire wafer cleanings, then adopt double-side rough grinding machine to carry out twin grinding, clean after grinding, anneal in the constant temperature oven of 1780 DEG C 48 hours, clean after waxing again, adopt copper dish buffing machine to carry out copper throwing the wafer waxed.
Wafer after copper throwing adopts chemical-mechanical polishing mathing to carry out CMP planarization, first with diamond ingot, polishing cloth is repaired before polishing, first dry finishing 6min clockwise, add water and repair 6min counterclockwise, adopt mean diameter at the silicon oxide polishing fluid of 120nm, the course of processing make pH value control 12 ± 0.5, with 430g/cm2Pressure, 50rpm rotating speed first tentatively polish, and by installing electromagnetic valve on equipment additional, accurately control polish temperature within the scope of 54 ± 3 DEG C, after preliminary polishing, adopt 250g/cm2Low pressure repair throwing wafer surface；
Carrying out cut under the nitrogen atmosphere that concentration is 99.999% after cleaning, the pressure of nitrogen is 7.0MPa, and cutting speed is 5mm/s, and power is 30%, and frequency is 700Hz, and pulse width is set to 0.2ms, and cutting yield is 95%.
Obtain small pieces wafer after cut, by silk-screen, plating AF film after small pieces wafer cleaning, obtain fingerprint recognition cover plate.
This utility model determines the response speed of the fingerprint recognition cover plate that the present embodiment obtains, it is shown that the response speed of fingerprint recognition cover plate that the present embodiment obtains is 0.43s.
This utility model determines the angularity of 2 inches of M surface sapphires that the present embodiment obtains, it is shown that the angularity of 2 inches of M surface sapphires that the present embodiment obtains is 11.01 μm.
Claims (10)
1. a M surface sapphire wafer, it is characterised in that the angularity of described M surface sapphire wafer is 0～15 μm.
2. M surface sapphire wafer according to claim 1, it is characterised in that the angularity of described M surface sapphire wafer is 1～14 μm.
3. M surface sapphire wafer according to claim 1, it is characterised in that the specification of described M surface sapphire wafer is 2 inches.
4. a fingerprint recognition cover plate, it is characterised in that the M surface sapphire wafer processing described in claims 1 to 3 any one of the described fingerprint recognition cover plate obtains.
5. fingerprint recognition cover plate according to claim 4, it is characterised in that described fingerprint recognition cover plate is rectangle, square or circular.
6. fingerprint recognition cover plate according to claim 5, it is characterised in that described rectangle fingerprint recognition cover plate has R angle；
The R angle of described rectangle fingerprint recognition cover plate is 1～2mm.
7. fingerprint recognition cover plate according to claim 5, it is characterised in that described square fingerprint recognition cover plate has R angle；
The R angle of described foursquare fingerprint recognition cover plate is 1～2mm.
8. fingerprint recognition cover plate according to claim 4, it is characterised in that the thickness of described fingerprint recognition cover plate is 0.15～0.4mm.
9. fingerprint recognition cover plate according to claim 4, it is characterised in that the area of described fingerprint recognition cover plate is 0.1～20cm2。
10. a fingerprint recognition module, it is characterised in that the cover sheet in fingerprint recognition module is the fingerprint recognition cover plate described in claim 4～9 any one.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110126106A (en) * | 2019-06-17 | 2019-08-16 | 浙江晶特光学科技有限公司 | Wafer processing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110126106A (en) * | 2019-06-17 | 2019-08-16 | 浙江晶特光学科技有限公司 | Wafer processing method |
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