CN110034040A - 基板处理方法及基板处理装置 - Google Patents

基板处理方法及基板处理装置 Download PDF

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Publication number
CN110034040A
CN110034040A CN201811453149.XA CN201811453149A CN110034040A CN 110034040 A CN110034040 A CN 110034040A CN 201811453149 A CN201811453149 A CN 201811453149A CN 110034040 A CN110034040 A CN 110034040A
Authority
CN
China
Prior art keywords
organic solvent
substrate
wafer
chemical solution
ipa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811453149.XA
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English (en)
Chinese (zh)
Inventor
菅野至
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN110034040A publication Critical patent/CN110034040A/zh
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046Dry cleaning only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN201811453149.XA 2017-11-30 2018-11-30 基板处理方法及基板处理装置 Pending CN110034040A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-230652 2017-11-30
JP2017230652A JP6967951B2 (ja) 2017-11-30 2017-11-30 基板処理方法および基板処理装置

Publications (1)

Publication Number Publication Date
CN110034040A true CN110034040A (zh) 2019-07-19

Family

ID=66848591

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811453149.XA Pending CN110034040A (zh) 2017-11-30 2018-11-30 基板处理方法及基板处理装置

Country Status (3)

Country Link
JP (1) JP6967951B2 (ko)
KR (1) KR102638072B1 (ko)
CN (1) CN110034040A (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7336956B2 (ja) 2019-10-10 2023-09-01 東京エレクトロン株式会社 基板処理システム、及び基板処理方法
WO2021161824A1 (ja) * 2020-02-14 2021-08-19 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP2023019610A (ja) * 2021-07-29 2023-02-09 株式会社Screenホールディングス 基板処理方法
JP2023047036A (ja) * 2021-09-24 2023-04-05 株式会社Screenホールディングス 基板乾燥用処理液及び基板乾燥方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002252197A (ja) * 2001-02-26 2002-09-06 Dainippon Screen Mfg Co Ltd 基板処理方法
JP2003297792A (ja) * 2002-04-03 2003-10-17 Mitsubishi Electric Corp 基板洗浄方法および洗浄乾燥装置並びに半導体装置の製造方法
WO2006087990A1 (ja) * 2005-02-15 2006-08-24 Intellectual Property Bank Corp. ガス式シリコンウエハ精密洗浄乾燥装置
JP2009016800A (ja) * 2007-06-04 2009-01-22 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板洗浄装置
JP2011249454A (ja) * 2010-05-25 2011-12-08 Toshiba Corp 超臨界乾燥方法
JP2017073504A (ja) * 2015-10-08 2017-04-13 東京エレクトロン株式会社 基板処理方法および基板処理装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5996424B2 (ja) * 2012-12-28 2016-09-21 東京エレクトロン株式会社 基板処理装置および基板処理方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002252197A (ja) * 2001-02-26 2002-09-06 Dainippon Screen Mfg Co Ltd 基板処理方法
JP2003297792A (ja) * 2002-04-03 2003-10-17 Mitsubishi Electric Corp 基板洗浄方法および洗浄乾燥装置並びに半導体装置の製造方法
WO2006087990A1 (ja) * 2005-02-15 2006-08-24 Intellectual Property Bank Corp. ガス式シリコンウエハ精密洗浄乾燥装置
JP2009016800A (ja) * 2007-06-04 2009-01-22 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板洗浄装置
JP2011249454A (ja) * 2010-05-25 2011-12-08 Toshiba Corp 超臨界乾燥方法
JP2017073504A (ja) * 2015-10-08 2017-04-13 東京エレクトロン株式会社 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
JP2019102600A (ja) 2019-06-24
KR20190064479A (ko) 2019-06-10
JP6967951B2 (ja) 2021-11-17
KR102638072B1 (ko) 2024-02-20

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