CN109991807A - 光致抗蚀剂面涂层组合物和处理光致抗蚀剂组合物的方法 - Google Patents
光致抗蚀剂面涂层组合物和处理光致抗蚀剂组合物的方法 Download PDFInfo
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- CN109991807A CN109991807A CN201811553566.1A CN201811553566A CN109991807A CN 109991807 A CN109991807 A CN 109991807A CN 201811553566 A CN201811553566 A CN 201811553566A CN 109991807 A CN109991807 A CN 109991807A
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Abstract
光致抗蚀剂面涂层组合物,其包含:包含具有以下通式(I)的单体作为聚合单元的含水碱溶性聚合物:其中:R1选自H、卤素原子、C1‑C3烷基或C1‑C3卤代烷基;R2独立地选自经取代或未经取代的C1‑C12烷基或经取代或未经取代的C5‑C18芳基;R3和R4独立地是H、经取代或未经取代的C1‑C12烷基、经取代或未经取代的C5‑C18芳基;X是C2‑C6经取代或未经取代的亚烷基;其中X可以任选地包含一个或多个环并且与R2一起可以任选地形成环;L1是单键或连接基团;p是1到50的整数;并且q是1到5的整数;和溶剂。还提供涂布有所描述的面涂层组合物的衬底和处理光致抗蚀剂组合物的方法。本发明尤其适用于制造半导体器件。
Description
技术领域
本发明涉及可以施用于光致抗蚀剂组合物之上的光致抗蚀剂面涂层组合物。本发明尤其适用作用于形成半导体器件的浸没式光刻工艺(immersion lithography process)中的面涂层。
背景技术
光致抗蚀剂用于将图像转印到衬底上。在衬底上形成光致抗蚀剂层并且接着经由光掩模使光致抗蚀剂层暴露于激活辐射源。光掩模具有对激活辐射不透明的区域和对激活辐射透明的其它区域。暴露于激活辐射提供光致抗蚀剂涂层的光诱导化学转化,由此将光掩模的图案转印到经光致抗蚀剂涂布的衬底上。在暴露之后,对光致抗蚀剂进行烘烤并且通过与显影剂溶液接触以使其显影,从而得到允许选择性加工衬底的浮雕图像。
用于在半导体器件中实现纳米(nm)级特点大小的一个方法是使用较短波长的光。然而,找到在193nm以下透明的材料的难度产生浸没式光刻工艺以通过使用液体增加透镜的数值孔径来将更多的光聚焦到膜中。浸没式光刻在成像器件(例如ArF光源)的最后一个表面与衬底例如半导体晶片上的第一表面之间采用相对较高的折射率液体,通常是水。
在浸没式光刻中,浸没流体与光致抗蚀剂层之间的直接接触可以引起光致抗蚀剂的组分滤出到浸没流体中。这种滤出可以造成光学透镜的污染并且引起浸没流体的有效折射率和传输特性的变化。为了解决这个问题,在浸没流体和底层光致抗蚀剂层之间引入光致抗蚀剂面涂层作为阻挡后者。
为了改进面涂层材料的性能,已经例如在以下中提出使用自隔离面涂层组合物以形成分级面涂层:《用于浸没式光刻的自隔离材料(Self-segregating Materials forImmersion Lithography)》,Daniel P.Sanders等人,《抗蚀剂材料和处理技术XXV的进展(Advances in Resist Materials and Processing Technology XXV)》,《SPIE会议记录(Proceedings of the SPIE)》,第6923卷,第692309-1-692309-12页(2008)。自隔离面涂层在理论上允许在浸没液体界面与光致抗蚀剂界面处的具有所需特性的经调整材料,例如在浸没流体界面处的改进的水后退接触角(receding contact angle)和在光致抗蚀剂界面处的良好的显影剂溶解度。
然而,在浸没式光刻中使用面涂层存在各种挑战。视特征如面涂层折射率、厚度、酸性、与抗蚀剂的化学相互作用以及浸泡时间而定,面涂层可以影响例如加工窗口、临界尺寸(CD)变化以及抗蚀剂轮廓中的一种或多种。另外,使用面涂层可能不利地影响器件产率,这归因于例如微桥接缺陷或阻止恰当的抗蚀剂图案形成的其它图案化缺陷。面涂层聚合物的所需特性包括例如有机配制物溶剂中良好的溶解度以及在含水碱显影剂中高溶解速率(DR)、低涂层缺陷、抗分层性和良好的图案塌陷外边距(pattern collapse margin)。
所属领域一直需要改进的光致抗蚀剂面涂层组合物和利用解决了与现有技术相关的一个或多个问题的这类材料的光刻方法。
发明内容
根据本发明的第一方面,提供光致抗蚀剂面涂层组合物。所述组合物包含:包含作为聚合单元的具有以下通式(I)的单体的含水碱溶性聚合物:
其中:R1选自H、卤素原子、C1-C3烷基或C1-C3卤代烷基;R2独立地选自经取代或未经取代的C1-C12烷基或经取代或未经取代的C5-C18芳基;X是C2-C6经取代或未经取代的亚烷基;其中X可以任选地包含一个或多个环并且与R2一起可以任选地形成环;L1是单键或连接基团;p是1到50的整数;并且q是1到5的整数;和溶剂。
根据本发明的另一个方面,提供经涂布衬底。经涂布衬底包含:衬底上的光致抗蚀剂层;和光致抗蚀剂层上的由如本文所描述的光致抗蚀剂面涂层组合物形成的面涂层。
根据本发明的另一个方面,提供处理光致抗蚀剂组合物的方法。所述方法包含:(a)将光致抗蚀剂组合物施用于衬底上以形成光致抗蚀剂层;(b)在光致抗蚀剂层上施用如本文所描述的光致抗蚀剂面涂层组合物以形成面涂层;(c)使面涂层和光致抗蚀剂层暴露于激活辐射;并且(d)使所暴露的面涂层和光致抗蚀剂层与显影剂接触以形成抗蚀图案。
具体实施方式
施用于光致抗蚀剂层上的本发明的优选面涂层组合物可以最小化或防止光致抗蚀剂层的组分迁移到浸没式光刻工艺中使用的浸没流体中。如本文所使用的术语“浸没流体”是指介于暴露工具的透镜与经光致抗蚀剂涂布的衬底之间的流体(通常是水)以进行浸没式光刻。
此外如本文所使用,如果相对于经相同方式处理但不存在面涂层组合物层的相同光致抗蚀剂***而言,在使用面涂层组合物时在浸没流体中检测到减少量的酸或有机材料,则认为面涂层抑制光致抗蚀剂材料迁移到浸没流体中。可以在暴露于光致抗蚀剂(存在和不存在外涂布面涂层组合物层)之前,然后在光刻处理光致抗蚀剂层(存在和不存在外涂布面涂层组合物层)并且进行穿过浸没液体的暴露之后,通过浸没流体的质谱分析进行浸没流体中的光致抗蚀剂材料的检测。优选地,面涂层组合物使浸没流体中所残留的光致抗蚀剂材料(例如如通过质谱分析所检测到的酸或有机物)相对于不采用任何面涂层(即浸没流体直接接触光致抗蚀剂层)的相同光致抗蚀剂而言减少至少10%,更优选地,面涂层组合物使浸没流体中所残留的光致抗蚀剂材料相对于不采用面涂层的相同光致抗蚀剂而言减少至少20%、50%或100%。
本发明的优选面涂层组合物具有例如含水碱显影剂中针对层的暴露与未暴露区域的极佳显影剂溶解度。本发明的优选面涂层组合物可以进一步允许改进在浸没式光刻工艺中至关重要的各种水接触角特征中的一种或多种,例如在浸没流体界面处的静态接触角、后退接触角、前进接触角以及滑动角。
所述组合物可以用于干式光刻中或更通常用于浸没式光刻工艺中。暴露波长除了受到光致抗蚀剂组合物的限制之外,不受特定限制,并且通常是248nm或低于200nm如193nm或EUV波长(例如13.4nm)。
适用于本发明的聚合物是含水碱溶性的以使得由所述组合物形成的面涂层可以在抗蚀剂显影步骤中使用含水碱性显影剂来移除,所述含水碱性显影剂例如是氢氧化季铵溶液,例如氢氧化四甲基铵(TMAH),通常是0.26N含水TMAH。适当地,不同的聚合物可以以不同的相对量存在。
本发明的面涂层组合物的聚合物可以含有各种重复单元,包括例如以下各项中的一种或多种:疏水基团;弱酸基团;强酸基团;分支链任选取代的烷基或环烷基;氟烷基;或极性基团,如酯基、醚基、羧基或磺酰基。聚合物的重复单元上的特定官能团的存在将视例如聚合物的预期官能度而定。如本文所使用的“取代的”是指使一个或多个氢原子经一个或多个取代基置换,所述取代基例如选自羟基、卤素(即F、Cl、Br、I)、C1-C10烷基、C6-C10芳基或包含前述物质中的至少一种的组合。
面涂层组合物的聚合物可以含有在光刻处理期间具有反应性的一种或多种基团,例如可以在存在酸和热的情况下经历裂解反应的一种或多种光酸不稳定基团,如酸不稳定酯基(例如,如通过丙烯酸叔丁酯或叔丁基甲基丙烯酸酯、金刚烷基丙烯酸酯的聚合得到的叔丁基酯基)和/或如通过乙烯基醚化合物的聚合得到的缩醛基。这类基团的存在可以使得一种或多种相关聚合物更加可溶于显影剂溶液中,由此有助于显影处理期间的显影性和面涂层的移除。
所述聚合物可以有利地进行选择以调整面涂层的特征,并且每个特征一般服务于一个或多个目标或功能。这类功能包括例如以下各项中的一种或多种:光致抗蚀剂轮廓调节、面涂层表面调节、减少缺陷以及减少面涂层与光致抗蚀剂层之间的界面混合。
本发明的面涂层组合物包含基质聚合物并且通常包括一种或多种额外的添加剂聚合物。基质聚合物是含水碱溶性的。也就是说,基质聚合物可溶于含水碱如氢氧化季铵溶液如0.26N氢氧化四甲基铵(TMAH)中。含水碱溶性聚合物包含作为聚合单元的具有以下通式(I)的单体:
R1选自H、卤素原子、C1-C3烷基或C1-C3卤代烷基;R2独立地选自经取代或未经取代的C1-C12烷基或经取代或未经取代的C5-C18芳基;X是C2-C6经取代或未经取代的亚烷基,通常是C2-C4并且更通常是C2经取代或未经取代的亚烷基;其中X可以任选地包含一个或多个环并且与R2一起可以任选地形成环;L1是例如选自任选取代的亚烷基如C1到C6亚烷基和任选取代的亚芳基如C5-C20亚芳基以及其组合的单键或连接基团,和选自-O-、-S-、-COO-和-CONR-的任选的一个或多个连接部分,其中R选自氢和任选取代的C1到C10烷基;并且p是1到50的整数,通常是1到20、1到10或最通常为1;并且q是1到5的整数,通常是1到2或最通常是1。据信,具有通式(I)的单元允许面涂层组合物溶剂中的基质聚合物的良好溶解度,并可以赋予含水碱显影剂中的基质聚合物以所需溶解度特征。这允许在光致抗蚀剂显影期间进行有效的移除。以基质聚合物的总聚合单元计,具有通式(I)的单元在基质聚合物中的存在量通常是1到90mol%,通常是10到70mol%、15到60mol%或20到50mol%。
用于形成具有通式(I)的聚合单元的示例性合适单体包括以下各者:
其中p是1到50的整数。
基质聚合物通常进一步包含额外类型的聚合单元以进一步赋予基质聚合物以所需特性,例如配方和显影剂溶解度。合适的单元类型包括例如一个或多个具有通式(II)和/或具有通式(III)的重复单元:
其中:R3和R5独立地表示H、卤素原子、C1-C3烷基、C1-C3卤代烷基,通常H或甲基;R4表示任选取代的直链、分支链、环状或非环状C1-C20烷基,通常C1-C12烷基;L2表示例如选自任选取代的脂族物如C1-C6亚烷基和任选地取代的芳族物如C5-C20芳族物、烃以及其组合的单键或多价连接基团,和选自-O-、-S-、-COO-和-CONR-的任选的一个或多个连接部分,其中R选自氢和任选取代的C1到C10烷基;并且n是1到5的整数,通常是1。
据信具有通式(II)的单元允许基质聚合物在用于面涂层组合物的溶剂中具有良好的溶解度。因为其高极性性质,具有通式(III)的单元可以赋予含水碱显影剂中的基质聚合物以所需溶解度特征。这允许在光致抗蚀剂显影期间进行有效的移除。
以基质聚合物的总聚合单元计,具有通式(II)的单元在基质聚合物中的存在量通常是1到90mol%,更通常20到60mol%或35到50mol%。以基质聚合物的总聚合单元计,具有通式(III)的单元在基质聚合物中的存在量通常是1到90mol%,更通常5到40mol%或15到30mol%。
用于形成具有通式(II)的单元的示例性合适单体包括以下各者:
用于具有通式(III)的单元的示例性合适单体包括以下各者:
基质聚合物可以包括如本文所描述的一种或多种额外类型的单元。基质聚合物可以例如包括含有磺酰胺基(例如-NHSO2CF3)、氟烷基和/或氟醇基(例如-C(CF3)2OH)的单元以增强聚合物的显影剂溶解速率。如果使用额外类型的单元,则以基质聚合物的总聚合单元计,其在基质聚合物中的存在量通常是1到40mol%。
基质聚合物应提供足够高的显影剂溶解速率以降低由于例如微桥接所致的整体缺陷率。用于基质聚合物的典型的显影剂溶解速率大于300纳米/秒,优选大于1000纳米/秒并且更优选大于3000纳米/秒。
基质聚合物优选具有高于表面活性聚合物表面能的表面能并且优选地基本上不可与表面活性聚合物混溶,从而使表面活性聚合物与基质聚合物相分离并且远离面涂层/光致抗蚀剂层界面迁移到面涂层的上表面上。基质聚合物的表面能通常是30到60mN/m。
根据本发明的示例性基质聚合物包括由如上所描述的具有通式(I)的单体形成的均聚物和如下的共聚物:
以面涂层组合物的总固体计,基质聚合物在所述组合物中的存在量通常是70到99wt%,更通常85到95wt%。基质聚合物的重均分子量Mw通常小于400,000Da,例如1000到50,000Da或2000到25,000Da。
本发明的面涂层组合物可以进一步包含表面活性聚合物。表面活性聚合物的表面能通常低于基质聚合物和所述组合物中的其它聚合物的表面能。在浸没式光刻工艺的情况下,表面活性聚合物可以改进面涂层/浸没流体界面处的表面特性。具体地说,表面活性聚合物有益地可以提供关于水的所需表面特性,例如面涂层/浸没流体界面处的改进的静态接触角(SCA)、后退接触角(RCA)、前进接触角(ACA)以及滑动角(SA)中的一个或多个。具体地说,表面活性聚合物可以允许较高的RCA,这可以允许较快的扫描速度和增加的处理吞吐量(process throughput)。呈干燥状态的面涂层组合物层的水后退接触角通常是75到90°,并且优选80到90°,并且更优选83到90°,例如83到88°。短语“呈干燥状态”是指以全部面涂层组合物计含有8wt%或更少的溶剂。
表面活性聚合物优选是含水碱溶性的以允许在用含水碱显影剂进行显影期间进行完全移除,所述显影剂如氢氧化季铵溶液,例如0.26N含水TMAH显影剂。表面活性聚合物优选不含羧酸基团,因为这类基团可能减小聚合物的后退接触角特性。
表面活性聚合物具有低于基质聚合物表面能的表面能。表面活性聚合物优选具有显著低于基质聚合物以及外涂层组合物中存在的其它聚合物表面能的表面能并且基本上不可与其混溶。面涂层组合物以此方式可以是自隔离的,其中在涂布、通常旋涂期间,表面活性聚合物远离一种或多种其它聚合物迁移到面涂层的上表面上。因此,在浸没式光刻工艺的情况下,在面涂层/浸没流体界面处的面涂层上表面处,所得面涂层富含表面活性聚合物。富含表面活性聚合物的表面区域的厚度通常是一个到两个或一个到三个单层,或厚度是约10到 尽管表面活性聚合物的所需表面能将视特定基质聚合物和其表面能而定,但表面活性聚合物表面能通常是15到35mN/m、优选18到30mN/m。表面活性聚合物通常比基质聚合物的那些小5到25mN/m,优选比基质聚合物的那些小5到15mN/m。
表面活性聚合物优选是氟化的。合适的表面活性聚合物可以包括例如那些包含具有通式(IV)的重复单元和具有通式(V)的重复单元的表面活性聚合物:
其中:R6独立地表示H、卤素原子、C1-C3烷基,通常H或甲基;R7表示直链、分支链或环状任选取代的C1到C20或C1到C12烷基,通常氟烷基;R7表示直链、分支链或环状C1到C20氟烷基,通常C1到C12氟烷基;L3表示例如选自任选取代的脂族物如C1到C6亚烷基和芳族烃和其组合的多价连接基团,和选自-O-、-S-、-COO-和-CONR-的任选的一个或多个连接部分,其中R选自氢和任选取代的C1到C10烷基,L3优选是-C(O)OCH2-;并且n是1到5的整数,通常是1。
据信由具有通式(IV)的单体形成的单元允许表面活性聚合物与所述组合物中的其它聚合物的有效相分离、增强的动态接触角例如增大的后退角和减小的滑动角。据信由具有通式(V)的单体形成的单元有助于相分离和增强的动态接触角特性,以及赋予表面活性聚合物以有益的滞后特征和改进的含水碱显影剂中溶解度。
以表面活性聚合物的总重复单元计,具有通式(IV)的单元在表面活性聚合物中的存在量通常是1到90mol%,例如10到40mol%。以表面活性聚合物的总重复单元计,具有通式(V)的单元在表面活性聚合物中的存在量通常是1到90mol%,例如50到80mol%。
用于具有通式(IV)的单元的示例性合适单体包括以下各者:
用于具有通式(V)的单元的示例性合适单体包括以下各者:
表面活性聚合物可以包括一个或多个额外的具有通式(III)、通式(IV)的单元和/或额外类型的单元。表面活性聚合物可以例如包括一个或多个额外的包含以下各项的单元:含氟基团,如氟化磺酰胺基、氟化醇基、氟化酯基或其组合;或酸不稳定离去基团;或其组合。含氟醇基的单元可以存在于表面活性聚合物中以达到增强显影剂溶解度或允许增强的动态接触角例如增大的后退角和减小的滑动角以及改进显影剂亲和力和溶解度的目的。如果使用额外类型的单元,则以表面活性聚合物计,其在表面活性聚合物中的存在量通常是1到70mol%。
适用作表面活性聚合物的示例性聚合物包括例如以下各者:
用于浸没式光刻的表面活性聚合物的含量下限值一般由防止光致抗蚀剂组分滤出的需要指定。以面涂层组合物的总固体计,表面活性聚合物在所述组合物中的存在量通常是1到30wt%,更通常3到20wt%或5到15wt%。表面活性聚合物的重均分子量通常小于400,000,优选5000到50,000,更优选5000到25,000。
面涂层组合物中可以存在任选的额外的聚合物。举例来说,除了基质聚合物和表面活性聚合物之外,还可以提供添加剂聚合物以达到调整抗蚀剂特点轮廓和/或控制抗蚀剂顶部缺失的目的。添加剂聚合物通常可与基质聚合物混溶并且基本上不可与表面活性聚合物混溶以使得表面活性聚合物可以远离面涂层/光致抗蚀剂界面从其它聚合物中自隔离到面涂层表面上。
用于配制并且浇铸面涂层组合物的典型的溶剂材料是溶解或分散面涂层组合物的组分但不明显地溶解底层光致抗蚀剂层的任何溶剂材料。总溶剂优选是基于有机物的(即大于50wt%有机物),通常是90到100wt%、更通常99到100wt%或100wt%有机溶剂,不包括例如以总溶剂计可以以0.05到1wt%的量存在的残留的水或其它污染物。优选地,不同溶剂例如两种、三种或更多种溶剂的混合物可以用于实现隔离表面活性聚合物与所述组合物中的一种或多种其它聚合物的有效相分离。溶剂混合物还可以有效地降低配制物的粘度,这使得分配体积减小。
在示例性方面中,可以在本发明的面涂层组合物中使用双溶剂***或三溶剂***。优选的溶剂***包括主要溶剂和附加溶剂并且可以包括较稀溶剂。关于面涂层组合物的非溶剂组分,主要溶剂通常表现出极佳的溶解度特征。尽管主要溶剂的所需沸点将视溶剂***的其它组分而定,但所述沸点通常小于附加溶剂的沸点,并且沸点通常是120℃到140℃,如约130℃。合适的主要溶剂包括例如C4到C10单价醇,如正丁醇、异丁醇2-甲基-1-丁醇、异戊醇、2,3-二甲基-1-丁醇、4-甲基-2-戊醇、异己醇、异庚醇、1-辛醇、1-壬醇和1-癸醇以及其混合物。以溶剂***计,主要溶剂的存在量通常是30到80wt%。
附加溶剂可以促进表面活性聚合物与面涂层组合物中的一种或多种其它聚合物之间的相分离以促进自隔离面涂层结构。另外,较高沸点的附加溶剂可以降低涂布期间的末端干燥效应。附加溶剂通常具有比溶剂***的其它组分沸点更高的沸点。尽管附加溶剂的所需沸点将视溶剂***的其它组分而定,但沸点通常是170℃到200℃,如约190℃。合适的附加溶剂包括例如羟基烷基醚,如具有下式的那些羟基烷基醚:
R11-O-R12-O-R13-OH
其中R11是任选取代的C1到C2烷基并且R12和R13独立地选自任选取代的C2到C4烷基和这类羟基烷基醚的混合物,包括异构体混合物。示例性羟基烷基醚包括二烷基二醇单烷基醚和其异构体,例如二乙二醇单甲醚、二丙二醇单甲醚、三丙二醇单甲醚、其异构体和其混合物。以溶剂***计,附加溶剂的存在量通常是3到15wt%。
较稀溶剂可以用于降低粘度并在较低的分配体积下改进涂层覆盖率。较稀溶剂通常是相对于主要溶剂的用于所述组合物的非溶剂组分的较贫溶剂。尽管较稀溶剂的所需沸点将视溶剂***的其它组分而定,但沸点通常是140℃到180℃,如约170℃。合适的较稀溶剂包括例如烷烃,如C8到C12正烷烃,例如正辛烷、正癸烷和十二烷;其异构体以及其异构体的混合物;和/或烷基醚,如具有式R14-O-R15的那些烷基醚,其中R14和R15独立地选自C2到C8烷基、C2到C6烷基和C2到C4烷基。烷基醚基团可以是直链或分支链的和对称的或不对称的。特别合适的烷基醚包括例如异丁基醚、异戊基醚、异丁基异己基醚和其混合物。其它合适的较稀溶剂包括酯溶剂,例如由通式(VII)表示的那些酯溶剂:
其中:R16和R17独立地选自C3到C8烷基;并且合在一起的R16和R17中的碳原子总数大于6。合适的这类酯溶剂包括例如戊酸丙酯、戊酸异丙酯、3-甲基丁酸异丙酯、2-甲基丁酸异丙酯、特戊酸异丙酯、异丁酸异丁酯、异丁酸2-甲基丁酯、2-甲基丁酸2-甲基丁酯、2-甲基己酸2-甲基丁酯、庚酸2-甲基丁酯、庚酸己酯、正丁酸正丁酯、正丁酸异戊酯和异戊酸异戊酯。如果使用较稀溶剂,则以溶剂***计,其存在量通常是10到70wt%。
特别优选的溶剂***包括4-甲基-2-戊醇、二丙二醇甲醚和异丁酸异丁酯。尽管示例性溶剂***已经关于两组分***和三组分***有所描述,但应该清楚,可以使用额外的溶剂。举例来说,可以采用一种或多种额外的主要溶剂、较稀溶剂、附加溶剂和/或其它溶剂。
面涂层组合物可以包含一种或多种其它任选的组分。举例来说,所述组合物可以包括用于增强抗反射特性的光化染料和对比染料、抗条纹剂等中的一种或多种。如果使用这类任选的添加剂,则以外涂层组合物的总固体计,其通常以微量如0.1到10wt%存在于所述组合物中。
面涂层组合物中包括酸生成剂化合物如光酸生成剂(PAG)和/或热酸生成剂(TAG)化合物可以是有益的。合适的光酸生成剂在化学增幅型光致抗蚀剂领域中是已知的,并且包括例如:鎓盐,例如三苯基锍三氟甲烷磺酸盐、(对叔丁氧基苯基)二苯基锍三氟甲烷磺酸盐、三(对叔丁氧基苯基)锍三氟甲烷磺酸盐、三苯基锍对甲苯磺酸盐;硝基苄基衍生物,例如2-硝基苄基-对甲苯磺酸盐、2,6-二硝基苄基-对甲苯磺酸盐和2,4-二硝基苄基-对甲苯磺酸盐;磺酸酯,例如1,2,3-三(甲烷磺酰基氧基)苯、1,2,3-三(三氟甲烷磺酰基氧基)苯和1,2,3-三(对甲苯磺酰基氧基)苯;重氮甲烷衍生物,例如双(苯磺酰基)重氮甲烷、双(对甲苯磺酰基)重氮甲烷;乙二肟衍生物,例如双-O-(对甲苯磺酰基)-α-二甲基乙二肟和双-O-(正丁烷磺酰基)-α-二甲基乙二肟;N-羟基酰亚胺化合物的磺酸酯衍生物,例如N-羟基琥珀酰亚胺甲磺酸酯、N-羟基琥珀酰亚胺三氟甲磺酸酯;和含卤素的三嗪化合物,例如2-(4-甲氧基苯基)-4,6-双(三氯甲基)-1,3,5-三嗪和2-(4-甲氧基萘基)-4,6-双(三氯甲基)-1,3,5-三嗪。可以使用这类PAG中的一种或多种。
合适的热酸生成剂包含例如甲苯磺酸硝基苄酯,如甲苯磺酸2-硝基苄酯、甲苯磺酸2,4-二硝基苄酯、甲苯磺酸2,6-二硝基苄酯、甲苯磺酸4-硝基苄酯;苯磺酸酯,如4-氯苯磺酸2-三氟甲基-6-硝基苄酯、4-硝基苯磺酸2-三氟甲基-6-硝基苄酯;酚醛磺酸酯,如苯基、4-甲氧基苯磺酸酯;有机酸的烷基铵盐,如10-樟脑磺酸、三氟甲基苯磺酸、全氟丁烷磺酸的三乙铵盐;和特定的鎓盐。各种芳族(蒽、萘或苯衍生物)磺酸胺盐可以用作TAG,包括美国专利第3,474,054号、第4,200,729号、第4.251,665号和第5,187,019号中所公开的那些盐。TAG的实例包括由美国康涅狄格州诺沃克的King Industries以NACURECDX和K-PURE名称例如NACURE 5225、CDX-2168E、K-PURE2678和K-PURE2700出售的那些TAG。可以使用这类TAG中的一种或多种。
如果采用一种或多种酸生成剂,则以所述组合物的总固体计,其可以以相对较少量例如0.1到8wt%用于面涂层组合物中。一种或多种酸生成剂化合物的这种使用可以有利地影响在底层抗蚀剂层中图案化的显影图像的光刻性能,特别是分辨率。
由所述组合物形成的面涂层的折射率通常在193nm下是1.4或更大,优选在193nm下是1.47或更大。折射率可以通过改变基质聚合物、表面活性聚合物、添加剂聚合物或外涂层组合物的其它组分的组成来调整。举例来说,增加外涂层组合物中的有机内容物的相对量可以提供层的增加的折射率。优选的外涂层组合物层在目标暴露波长下的折射率在浸没流体的折射率与光致抗蚀剂的折射率之间。
光致抗蚀剂面涂层组合物可以遵照已知程序来制备。举例来说,所述组合物可以通过将所述组合物的固体组分溶解于溶剂组分中来制备。所述组合物的所需总固体含量将视如所述组合物中的特定聚合物和所需最终层厚度的因素而定。以所述组合物的总重量计,外涂层组合物的固体含量优选是1到10wt%,更优选1到5wt%。全部组合物的粘度通常是1.5到2厘泊(cp)。
光致抗蚀剂
适用于本发明的光致抗蚀剂组合物包括包含酸敏感性基质聚合物的化学增幅型光致抗蚀剂组合物,意味着作为光致抗蚀剂组合物层的一部分,聚合物和组合物层经历显影剂中溶解度的变化,这是因为其与由光酸生成剂生成的酸进行反应,随后进行软烘烤,暴露于激活辐射和后暴露烘烤。抗蚀剂配制物可以是正作用的或负作用的,但通常是正作用的。在正型光致抗蚀剂中,溶解度变化通常发生在基质聚合物中的酸不稳定基团如光酸不稳定酯或缩醛基在暴露于激活辐射和热处理时经历光酸促进的去保护反应之时。适用于本发明的合适的光致抗蚀剂组合物是市售的。
对于在如193nm的波长下的成像,基质聚合物通常基本上不含(例如小于15摩尔%)或完全不含苯基、苄基或其它芳族基团,其中这类基团高度吸收辐射。欧洲申请EP930542A1和美国专利第第6,692,888号和第6,680,159号中公开了基本上不含或完全不含芳族基团的合适的聚合物,其全部都是Shipley Company的。优选的酸不稳定基团包括例如含有共价连接到基质聚合物的酯的羧基氧的叔非环烷基碳(例如叔丁基)或叔脂环族碳(例如甲基金刚烷基)的缩醛基或酯基。
合适的基质聚合物进一步包括含有(烷基)丙烯酸酯单元的聚合物,优选包括酸不稳定的(烷基)丙烯酸酯单元,如丙烯酸叔丁酯、甲基丙烯酸叔丁酯、丙烯酸甲基金刚烷酯、甲基丙烯酸甲基金刚烷酯、丙烯酸乙基葑酯、甲基丙烯酸乙基葑酯等以及其它非环烷基和脂环族(烷基)丙烯酸酯。例如美国专利。第6,057,083号、欧洲公开申请EP01008913A1和EP00930542A1以及美国专利第6,136,501号中描述了这类聚合物。其它合适的基质聚合物包括例如那些含有非芳族环烯烃(内环双键)的聚合单元的基质聚合物,如任选取代的降冰片烯,例如美国专利第5,843,624号和第6,048,664号中描述了聚合物。再其它合适的基质聚合物包括含有聚合酐单元、特别地聚合马来酸酐和/或衣康酸酐单元的聚合物,如公开于欧洲公开申请EP01008913A1和美国专利第6,048,662号中。
还适用作基质聚合物的是含有含杂原子、特别地氧和/或硫的重复单元(但酸酐除外,即所述单元不含酮环原子)的树脂。杂脂环单元可以稠合到聚合物主链,并且可以包含如通过聚合降冰片烯基团得到的稠合碳脂环单元和/或如通过聚合马来酸酐或衣康酸酐得到的酸酐单元。PCT/US01/14914和美国专利第6,306,554号中公开了这类聚合物。其它合适的含杂原子基团的基质聚合物包括含有经一个或多个含杂原子(例如氧或硫)的基团例如羟基萘基取代的聚合碳环芳基单元的聚合物,如公开于美国专利第7,244,542号中。
上述基质聚合物中的两种或更多种的掺合物可以适当地用于光致抗蚀剂组合物中。
用于光致抗蚀剂组合物中的合适的基质聚合物是市售的,并且可由所属领域技术人员容易地制备。基质聚合物以足以使抗蚀剂的暴露涂层可在合适的显影剂溶液中显影的量存在于抗蚀剂组合物中。通常,以抗蚀剂组合物的总固体计,基质聚合物在所述组合物中的存在量通常是50到95wt%。基质聚合物的重均分子量Mw通常小于100,000,例如5000到100,000,更通常5000到15,000。
光致抗蚀剂组合物进一步包含光活性组分,如以足以在暴露于激活辐射后在所述组合物的涂层中产生潜像的量采用的光酸生成剂(PAG)。举例来说,以光致抗蚀剂组合物的总固体计,光酸生成剂的存在量应适当地是约1到20wt%。通常,与非化学增幅型材料相比,较少量的PAG适用于化学增幅型抗蚀剂。合适的PAG在化学增幅型光致抗蚀剂领域中是已知的,并且包括例如以上关于面涂层组合物所描述的那些物质。
适用于光致抗蚀剂组合物的溶剂包括例如:二醇醚,如2-甲氧基***(二乙二醇二甲醚)、乙二醇单甲醚和丙二醇单甲醚;丙二醇单甲醚乙酸酯;乳酸酯,如乳酸甲酯和乳酸乙酯;丙酸酯,如丙酸甲酯、丙酸乙酯、乙基乙氧基丙酸酯和异丁酸甲基-2-羟酯;溶纤剂酯,如甲基溶纤剂乙酸酯;芳族烃,如甲苯和二甲苯;和酮,如丙酮、甲基乙基酮、环己酮和2-庚酮。溶剂的掺合物,如以上所描述的溶剂中的两种、三种或更多种的掺合物也是合适的。以光致抗蚀剂组合物的总重量计,溶剂在所述组合物中的存在量通常是90到99wt%,更通常95到98wt%。
光致抗蚀剂组合物还可以包括其它任选的材料。举例来说,所述组合物可以包括光化染料和对比染料、抗条纹剂、增塑剂、增速剂、敏化剂等中的一种或多种。如果使用此类任选的添加剂,则其通常以光致抗蚀剂组合物的总固体计以微量如0.1到10wt%存在于所述组合物中。
抗蚀剂组合物的优选的任选添加剂是添加的碱。合适的碱是所属领域中已知的并且包含例如直链和环状酰胺和其衍生物,如N,N-双(2-羟乙基)特戊酰胺、N,N-二乙基乙酰胺、N1,N1,N3,N3-四丁基丙二酰胺、1-甲基氮杂环庚烷-2-酮、1-烯丙基氮杂环庚烷-2-酮和1,3-二羟基-2-(羟甲基)丙酰-2-基氨基甲酸叔丁酯;芳族胺,如吡啶和二叔丁基吡啶;脂族胺,如三异丙醇胺、正叔丁基二乙醇胺、双(2-乙酰氧基-乙基)胺、2,2',2",2"'-(乙烷-1,2-二基双(氮烷三基))四乙醇和2-(二丁氨基)乙醇,2,2',2"-氮基三乙醇;环状脂族胺,如1-(叔丁氧基羰基)-4-羟基哌啶、1-吡咯烷羧酸叔丁酯、2-乙基-1H-咪唑-1-羧酸叔丁酯、哌嗪-1,4-二羧酸二叔丁酯和N(2-乙酰氧基-乙基)吗啉。以光致抗蚀剂组合物的总固体计,添加的碱适当地以相对较小的量例如0.01到5wt%、优选0.1到2wt%使用。
光致抗蚀剂可以遵照已知程序来制备。举例来说,可以通过将光致抗蚀剂的固体组分溶解于溶剂组分中来将抗蚀剂制备为涂层组合物。光致抗蚀剂的所需总固体含量将视如所述组合物中的特定聚合物、最终层厚度和暴露波长的因素而定。以光致抗蚀剂组合物的总重量计,光致抗蚀剂的固体含量通常在1到10wt%、更通常2到5wt%之间变化。
光刻处理
液体光致抗蚀剂组合物可以通过如旋涂、浸渍、滚涂或其它常规的涂布技术并且通常是旋涂来施用于衬底。当旋涂时,涂料溶液的固体含量可以基于所利用的特定旋转设备、溶液粘度、旋转器速度以及允许旋转的时间量来进行调节以得到所期望的膜厚度。
用于本发明方法的光致抗蚀剂组合物以用于施用光致抗蚀剂的常规方式适当地施用于衬底。举例来说,可以将所述组合物施用于硅晶片或涂布有一个或多个层并且具有表面特点的硅晶片上以产生微处理器或其它集成电路组件。还可以适当地采用铝-氧化铝、砷化镓、陶瓷、石英、铜、玻璃衬底等。光致抗蚀剂组合物通常施用于抗反射层例如有机抗反射层上。
本发明的面涂层组合物可以通过如以上参考光致抗蚀剂组合物所描述的任何合适的方法并且通常是旋涂来施用于光致抗蚀剂组合物上。
在将光致抗蚀剂涂布到表面上之后,可以将其加热(软烘烤)以移除溶剂直到通常光致抗蚀剂涂层是无粘性的,或可以在施用面涂层组合物之后干燥光致抗蚀剂层并且在单一热处理步骤中将来自光致抗蚀剂组合物层和面涂层组合物层的溶剂基本上移除。
接着使具有外涂布面涂层的光致抗蚀剂层经由图案化光掩模暴露以针对光致抗蚀剂的光活性组分激活的辐射。暴露通常在浸没式扫描仪情况下进行,但可替代地可以在干燥(非浸没)暴露工具情况下进行。
在暴露步骤期间,光致抗蚀剂组合物层暴露于图案化激活辐射,并且视暴露工具和光致抗蚀剂组合物的组分而定暴露能通常在约1到100mJ/cm2范围内。本文对将光致抗蚀剂组合物暴露于针对光致抗蚀剂激活的辐射的提及表明辐射能够在光致抗蚀剂中形成潜像,如通过引起光活性组分的反应进行,例如由光酸生成剂化合物产生光酸。
光致抗蚀剂组合物(如果是光敏性的,和面涂层组合物)通常通过短暴露波长来光活化,例如波长小于300nm如248nm、193nm和EUV波长如13.5nm的辐射。暴露之后,通常在约70℃到约160℃范围内的温度下烘烤所述组合物层。
此后,使膜显影,通常通过用例如选自以下各项的含水碱显影剂处理:氢氧化季铵溶液,如氢氧化四烷基铵溶液,通常0.26N氢氧化四甲基铵;胺溶液,如乙胺、正丙胺、二乙胺、二正丙胺、三乙胺或甲基二乙胺;醇胺,如二乙醇胺或三乙醇胺;和环胺,如吡咯或吡啶。一般来说,显影依照所属领域所公认的程序。
在光致抗蚀剂层显影之后,可以例如根据所属领域中已知的程序通过化学蚀刻或镀覆缺乏抗蚀剂的衬底区域,在缺乏抗蚀剂的那些区域上对经显影衬底进行选择性处理。在这类处理之后,可以使用已知剥离程序移除衬底上剩余的抗蚀剂。
以下非限制性实例说明了本发明。
实例
分子量测定:
在配备有折射率检测器Waters Alliance System GPC上通过凝胶渗透色谱法(GPC)测量聚合物的数量和重均分子量Mn和Mw以及多分散性(PDI)值(Mw/Mn)。将样品溶解于约1mg/mL浓度的HPCL级THF中,并且经由四个Shodex柱(KF805、KF804、KF803和KF802)注射。维持1mL/min流速和35℃温度。用窄分子量PS标准(EasiCal PS-2,PolymerLaboratories,Inc.)校准所述柱。
溶解速率(DR)测量:
在TEL ACT-8晶片轨迹上,在120℃下使8英寸硅晶片涂有底漆HMDS持续30秒,然后使用1500rpm转速涂布有含有含14wt%固体的4-甲基-2-戊醇的基质聚合物溶液,并且在90℃下软烘烤晶片60秒。膜厚度是在Thermawave Optiprobe膜厚度测量工具上进行测量并且通常是约400nm。在LTG ARM-808EUV溶解速率监测器上在470nm入射波长下使用0.001秒的数据收集间隔测量MF CD-26显影剂(0.26N含水氢氧化四甲基铵)中的溶解速率。
树脂制备:
如下所述,使用以下单体制备基质聚合物P1到P38、CP1到CP3和表面活性聚合物X1到X2。
面涂层聚合物P1合成:
通过将10g丙二醇单甲醚(PGME)、7.70g单体A1、2.30g单体C1和0.50g Wako V-601引发剂在容器中组合并搅动混合物以溶解组分来制备进料溶液。将8.6g PGME引入反应容器中并且用氮气吹扫容器30分钟。接着伴以搅动将反应容器加热到95℃。然后将进料溶液引入反应容器中并在1.5小时内进料。伴以搅动使反应容器再维持在95℃下三个小时,并且接着使其冷却到室温。通过将反应混合物逐滴添加到1/5甲醇/水(v/v)中来沉淀聚合物,过滤收集,并真空干燥。得到呈白色固体粉末状的聚合物P1[产量:8.75g,Mw=10.6kDa,PDI=1.9]。
面涂层聚合物P2到P38和CP1到CP3(比较)合成:
使用类似的程序制备树脂P2到P38和CP1到CP3(比较),并且组成如表1中所述。
添加剂聚合物X1合成:
通过将9.1g丙二醇单甲醚(PGME)、14.24g单体B9、0.76g单体B10和0.54g Wako V-601引发剂在容器中组合并搅动混合物以溶解组分来制备进料溶液。将11.1g PGME引入反应容器中并且用氮气吹扫容器30分钟。接着伴以搅动将反应容器加热到95℃。然后将进料溶液引入反应容器中并在1.5小时内进料。伴以搅动使反应容器在95℃下再维持三个小时,并且接着使其冷却到室温。通过将反应混合物逐滴添加到1/4甲醇/水(v/v)中来沉淀聚合物,过滤收集,并真空干燥。得到呈白色固体粉末状之聚合物X1[产量:11.80g,Mw=45.5kDa,PDI=3.0]。
添加剂聚合物X2合成:
使用类似的程序制备树脂X2,并且其组成如表1中所述。
表1
面涂层添加剂:
使用以下小分子添加剂制备如下所描述的面涂层组合物。
面涂层组合物制备:
通过将表2中所示的组分添加到溶剂***中来配制面涂层组合物,所述溶剂***包括4-甲基-2-戊醇、异丁酸异丁酯和二丙二醇甲醚,其量如表2中所述。将每种混合物过滤通过0.2μm PTFE盘。
表2
Comp=比较实例;4M2P=4-甲基-2-戊醇;IBIB=异丁酸异丁酯;DPM=二丙二醇甲醚。
涂层缺陷测试:
在TEL Lithius轨迹上,使用90℃/60秒的SB将面涂层涂布到裸300mm原生硅晶片上到厚度。在KLA-Tencor Surfscan SP2晶片表面检测工具上检测经涂布膜。
剥离量测:
在TEL ACT-8轨迹上,在120℃下使8"硅晶片涂有底漆HMDS持续30秒并且随后使用90℃/60秒的SB旋涂有面涂层。将经涂布晶片完全浸入蒸馏水中并且在5秒、30秒、1分钟、10分钟、30分钟和1小时之后视觉上检查膜分层。在检测时间内偶尔手动摇荡容纳晶片和水浴的容器以平缓地搅动溶液。认为在1小时之后不显示膜分层的面涂层在剥离测试中合格。认为在1小时之时或在1小时之前显示分层的那些面涂层不合格。
浸没式光刻和图案化塌陷外边距(PCM)测量:
用TEL Lithius 300mm晶片轨迹和ASML 1900i浸没式扫描仪在1.3NA、0.98/0.71内部/外部σ下进行浸没式光刻,并且用XY极化进行环形照明。使300mm晶片涂布有AR40A第一底部抗反射涂层(BARC)(陶氏化学公司(The Dow Chemical Company))并在205℃下固化60秒。随后将AR104BARC涂布在第一BARC上并在175℃下固化60秒。将EPIC2389光致抗蚀剂(陶氏化学公司)涂布在BARC堆上并在100℃下软烘烤60秒。将面涂层组合物层涂布在光致抗蚀剂层上并在90℃下软烘烤60秒。经由具有在最佳焦点下的55nm1:1线-空间图案并增加剂量的光掩模暴露晶片并且随后在90℃下暴露后烘烤(PEB)60秒。PEB之后,在0.26N含水TMAH显影剂中将晶片显影12秒,用蒸馏水冲洗并旋转干燥。在Hitachi CG4000CD-SEM上进行度量。将图案塌陷CD(PCM)定义为最小临界尺寸(CD),在此之下线保持静止并且表现为直线。示例性和比较面涂层组合物的性能数据显示于表3中。
表3
Claims (10)
1.一种光致抗蚀剂面涂层组合物,其包含:
包含具有以下通式(I)的单体作为聚合单元的含水碱溶性聚合物:
其中:R1选自H、卤素原子、C1-C3烷基或C1-C3卤代烷基;R2独立地选自经取代或未经取代的C1-C12烷基或经取代或未经取代的C5-C18芳基;X是C2-C6经取代或未经取代的亚烷基;其中X可以任选地包含一个或多个环并且与R2一起可以任选地形成环;L1是单键或连接基团;p是1到50的整数;并且q是1到5的整数;和
溶剂。
2.根据权利要求1所述的光致抗蚀剂面涂层组合物,其中p是1到5的整数。
3.根据权利要求1所述的光致抗蚀剂面涂层组合物,其中在通式(I)中,L1是单键,X是-CH2CH2-,p是1并且q是1。
4.根据权利要求1到3中任一项所述的光致抗蚀剂面涂层组合物,其中所述含水碱聚合物进一步包含具有以下通式(II)的单体作为聚合单元:
其中:R3选自H、卤素原子、C1-C3烷基或C1-C3卤代烷基;并且R4选自任选取代的直链、分支链、环状或非环状C1到C20烷基。
5.根据权利要求1到4中任一项所述的光致抗蚀剂面涂层组合物,其中所述含水碱聚合物进一步包含具有以下通式(III)的单体作为聚合单元:
其中:R5是H、卤素原子、C1-C3烷基或C1-C3卤代烷基;L2表示单键或多价连接基团;并且n是1到5的整数。
6.根据权利要求1到5中任一项所述的光致抗蚀剂面涂层组合物,其中所述溶剂是基于有机物的溶剂。
7.根据权利要求1到6中任一项所述的光致抗蚀剂面涂层组合物,其进一步包含不同于所述含水碱溶性聚合物的含氟聚合物。
8.根据权利要求7所述的光致抗蚀剂面涂层组合物,其中以所述光致抗蚀剂面涂层组合物的总固体计,所述含水碱溶性聚合物的存在量是70到99wt%并且所述含氟聚合物在所述光致抗蚀剂面涂层组合物中的存在量是1到30wt%。
9.一种经涂布衬底,其包含:
衬底上的光致抗蚀剂层;和
所述光致抗蚀剂层上的由根据权利要求1到8中任一项所述的光致抗蚀剂面涂层组合物形成的面涂层。
10.一种处理光致抗蚀剂组合物的方法,其包含:
(a)将光致抗蚀剂组合物施用于衬底上以形成光致抗蚀剂层;
(b)在所述光致抗蚀剂层上施用根据权利要求1到8中任一项所述的光致抗蚀剂面涂层组合物以形成面涂层;
(c)使所述面涂层和所述光致抗蚀剂层暴露于激活辐射;并且
(d)使所述经暴露面涂层和光致抗蚀剂层与显影剂接触以形成抗蚀剂图案。
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