CN109585267B - 氮化硅膜的形成方法 - Google Patents
氮化硅膜的形成方法 Download PDFInfo
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- CN109585267B CN109585267B CN201811131218.5A CN201811131218A CN109585267B CN 109585267 B CN109585267 B CN 109585267B CN 201811131218 A CN201811131218 A CN 201811131218A CN 109585267 B CN109585267 B CN 109585267B
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- 238000000034 method Methods 0.000 title claims abstract description 82
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 81
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 239000004065 semiconductor Substances 0.000 claims abstract description 79
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 74
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 63
- 150000004767 nitrides Chemical class 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 36
- 238000000151 deposition Methods 0.000 claims abstract description 32
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 24
- 230000008021 deposition Effects 0.000 claims abstract description 21
- 239000007789 gas Substances 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- 238000002161 passivation Methods 0.000 claims description 47
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 20
- 238000007599 discharging Methods 0.000 claims 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- 239000003546 flue gas Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 230000003746 surface roughness Effects 0.000 description 34
- 239000000460 chlorine Substances 0.000 description 23
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 13
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- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 238000010494 dissociation reaction Methods 0.000 description 5
- 230000005593 dissociations Effects 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
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- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229960002050 hydrofluoric acid Drugs 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
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- 238000004544 sputter deposition Methods 0.000 description 2
- 101100112111 Caenorhabditis elegans cand-1 gene Proteins 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
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- 229910052731 fluorine Inorganic materials 0.000 description 1
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- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract
披露了一种在氮化物半导体层上沉积氮化硅(SiN)膜的方法。该方法包括以下步骤:(a)将包括氮化物半导体层的外延衬底装入处于第一温度的反应炉内,并将炉内的气氛转换为氮气(N2);(b)将炉内的压力保持为高于30kPa,并将炉内的温度升至第二温度;(c)在第二温度下,将炉内气氛转换为氨气(NH3);(d)在低于100Pa的第二压力下,通过供给SiH2Cl2作为硅(Si)的源气体从而开始进行沉积。本发明的特征为从炉内温度达到临界温度到供给SiH2Cl2的时间长度小于20分钟,其中第一压力在所述临界温度下达到平衡压力。
Description
相关申请的交叉引用
本申请基于并要求2017年9月29日提交的日本专利申请No.JP-2017-191009和2018年5月24日提交的JP-2018-099897的优先权的权益,它们的全部内容通过引用并入本文。
技术领域
本发明涉及一种形成由氮化硅(SiN)制成的钝化膜的方法,特别是形成用于氮化物半导体器件的SiN膜的方法。
背景技术
日本专利待审查公开Nos.JP-2013-077621A和JP-2013-127047公开了半导体器件类型的高电子迁移率晶体管(HEMT)。在前一专利文献中公开的HEMT在由碳化硅(SiC)制成的衬底上设置有由化合物半导体材料制成的半导体层和覆盖该半导体层的SiN钝化膜。该专利文献中所公开的SiN钝化膜设置有开口。形成栅极以通过该开口与半导体层接触。也就是说,栅极填充该开口。该文献中公开的SiN钝化膜通过称为等离子体辅助化学气相沉积(p-CVD)技术的技术来形成。
在后一专利文献中公开的另一种HEMT具有在衬底上形成的半导体堆叠体,其中该半导体堆叠体包括氮化物半导体层。半导体堆叠体在其顶部被SiN钝化膜覆盖,确切地说,被由Si3N4制成的钝化膜覆盖,Si3N4是通过所谓的低压化学气相沉积(LPCVD)技术在高于550℃、优选高于700℃的生长温度下沉积而获得的。
由诸如氮化镓(GaN)之类的氮化物半导体材料制成的电子器件在本领域中变得非常流行。这种电子器件通常具有由包含硅(Si)的无机材料(通常为氮化硅(SiN))制成的钝化膜,以便通过物理方式和化学方式保护氮化物半导体层的表面。SiN膜可以通过例如p-CVD技术和/或使用电子回旋共振(ECR)等的溅射形成,其中这些技术可以在相对较低的温度下形成SiN膜。p-CVD和/或ECR溅射可能会使氮化物半导体层表面损坏。
在半导体制造工艺领域中,在半导体材料上形成SiN膜的另一种技术已知为LPCVD技术,其中LPCVD技术在相对较高的温度和较低的压力下形成具有令人满意的质量的SiN膜。LPCVD技术在主要由硅(Si)制成的半导体器件的制造工艺中非常流行,这是因为Si材料固有地具有更强的耐温性。在LPCVD技术变得适用于由氮化物半导体材料制成的电子器件的情况下,这种器件可能具有吸引人的性能。
然而,当氮化物半导体材料设置在高温和低压条件下时,氮化物半导体材料中所包含的氮原子容易从其中解离,这降低了氮化物半导体材料的表面质量。另外,为了提高SiN膜的均匀性,优选二氯硅烷(SiH2Cl2)作为LPCVD技术中的硅(Si)的原料;然而,已知二氯硅烷中含有的氯(Cl)是蚀刻氮化物半导体材料的元素,这可能会进一步降低氮化物半导体材料表面的质量。
发明内容
本发明涉及在氮化物半导体层上沉积氮化硅(SiN)膜的方法。该方法包括以下步骤:(a)将包括氮化物半导体层的外延衬底装入处于低于500℃的第一温度的炉内;(b)将所述炉内的气氛由空气转换为氮气(N2),并将所述炉内的压力设定为高于30kPa的第一压力;(c)将温度升至高于750℃的第二温度,同时保持压力为所述第一压力;(d)在20分钟内将所述炉内的气氛由氮气(N2)转换为氨气(NH3);(e)将所述炉内的压力设定为低于100Pa的第二压力;和(f)通过供给二氯硅烷(SiH2Cl2)和氨(NH3)来沉积所述SiN膜。
本发明方法的另一个方面具有如下特征:升高温度的步骤(c)和将气氛转换为氨气(NH3)的步骤(d)中,将经过时间设定为短于60分钟,其中将温度达到由以下等式定义的临界温度TC的时刻到开始沉积的时间测定为所述经过时间:
103·A/TC+B=exp(P/C),
其中P是以帕斯卡(Pa)为单位的所述第一压力,TC是以开尔文(K)为单位的所述临界温度,A至C分别是-10.1、12.5和0.434。
附图说明
通过参考附图对本发明优选实施方案的以下详细描述,将更好地理解前述和其他目的、方面和优点,其中:
图1是根据本发明第一实施方案的设置在外延衬底上的由氮化硅(SiN)制成的钝化膜的截面图;
图2是示出了形成SiN钝化膜的方法的流程图;
图3表示通过LPCVD技术形成SiN钝化膜的炉内温度曲线和气氛;
图4示出了在升温期间,覆盖有SiN钝化膜的氮化物半导体层的表面粗糙度相对于炉内压力的变化,其中表面粗糙度通过均方根(RMS)测量;
图5示出了氮化物半导体层的表面粗糙度相对于装载温度TLOAD的变化,在装载温度TLOAD下,将外延衬底装载在炉内;
图6示出了表面粗糙度相对于经过时间的变化,所述经过时间为从炉的第一次排气到供给二氯硅烷(SiH2Cl2)的时间;
图7示出了氮气(N2)的平衡压力与温度之间的关系;
图8示出了以摄氏度为单位的温度与以帕斯卡为单位的N2的平衡压力之间的关系;
图9示出了外延衬底的表面粗糙度与经过时间之间的关系,该经过时间为从炉的温度达到临界温度的时刻到供给二氯硅烷(SiH2Cl2)的时间;
图10A至图10C示出了通过原子力显微镜(AFM)技术研究的氮化物半导体层的表面形态;
图11A至图11C是在形成根据本发明第三实施方案的半导体器件的方法的各个步骤中的半导体器件的截面图;
图12A和图12B是在图11C所示步骤之后,所述方法的各个步骤中的半导体器件的截面图;
图13A和图13B是在图12B所示步骤之后,所述方法的各个步骤中的半导体器件的截面图;和
图14示出了对于具有利用各种条件形成的SiN钝化膜的HEMT而言,栅极漏电流相对于栅极-漏极反向偏压的变化。
具体实施方式
接下来,将参考附图描述根据本发明的实施方案。在附图的描述中,彼此相同或相似的数字和符号将表示彼此相同或相似的元件而不重复说明。注意,本发明不限于这些实施方案,并且具有在所附权利要求中限定的范围以及在该范围及其等同物内的所有修改和变化。
第一实施方案
图1是在外延衬底9上设置的由氮化硅(SiN)制成的钝化膜3的截面图,该外延衬底9包括衬底7和氮化物半导体层5。SiN钝化膜3可以由低压化学气相沉积(LPCVD)技术形成。氮化物半导体层5可以外延生长在衬底7上,衬底7由例如碳化硅(SiC)、蓝宝石(Al2O3)、氮化镓(GaN)、硅(Si)等制成。氮化物半导体层5可以包括一个或多个层,包括GaN层、氮化铝镓(AlGaN)层、氮化铝(AlN)层等。
图2示出了形成SiN钝化膜3的方法的流程图。首先在步骤S1通过MOCVD(金属有机化学气相沉积)技术在衬底7上外延生长氮化物半导体层5,从而制备外延衬底9。然后,在步骤S2将SiN钝化膜3沉积在外延衬底9上,这将参考图2和图3详细描述,其中图3示出了炉内温度曲线和在炉内供给源气体的顺序。
该方法首先在步骤S21设定炉内温度低于500℃,优选低于300℃,该温度为被称为装载温度TLOAD(第一温度),其中本实施方案设定装载温度为500℃。在炉内温度稳定在上述装载温度TLOAD之后,在步骤S22,可以在空气气氛下将外延衬底9装入炉内。然后,在步骤S23中,通过重复进行炉的排气和引入氮气(N2),可以将炉内气氛转换为氮气(N2),这有时被称为循环吹扫。
在循环吹扫完成之后,在步骤S24,将炉内压力设定为高于3kPa的第一压力。第一压力可以低于100kPa,这几乎是空气压力。本实施方案将第一压力设定为30kPa。此后,对包括源气体供给路径的炉的气密性进行检查。具体而言,对炉进行排气,然后将炉与外部气密地隔离,检查是否观察到压力的变化或增量。此后,在步骤S25中,将炉内的压力保持为第一压力,同时将炉内温度升高到高于700℃的第二温度,其中第二温度通常等于SiN钝化膜的沉积温度。温度的上升速率优选尽可能快,例如,约10℃/分钟以上。本实施方案在10分钟内将炉温从500℃升高到800℃。第二温度,即沉积温度,优选高于800℃但低于900℃。
此后,在步骤S26,将炉排气从而将炉内的气氛从氮气(N2)置换为氨气(NH3)。首先将炉排气,使得其压力从第一压力降至低于第一压力的第二压力。具体而言,第二压力优选低于20Pa,或进一步优选低于2Pa但高于1Pa。本实施方案将炉子排气至2Pa的压力;然后引入氨气(NH3)。重复进行几次炉内排气和NH3的引入。在第二温度下将气氛从氮气(N2)转换为氨气(NH3)的过程中,氮化物半导体层5的表面在低压(例如,低于10Pa)下暴露尽可能短的时间,例如,氮化物半导体层5的表面在低压下暴露的累积时间优选短于20分钟,进一步优选短于10分钟。
在最后一次排气之后,在步骤S27中,该方法同时在炉内引入NH3和二氯硅烷(SiCl2H2),以开始沉积SiN钝化膜3。步骤S27可以设定NH3和SiH2Cl2的供给量相等。例如,NH3和SiH2Cl2的流量可以各自为100sccm,其中1sccm是在0℃、1atm下的流量。
在沉积具有设计厚度的SiN钝化膜3之后,该方法切断二氯硅烷(SiH2Cl2)的供给以将炉内气氛变为氨气(NH3)。此后,炉内温度下降到低于第二温度的温度,例如700℃。然后,在步骤S28中,通过重复排气和N2的引入从而将炉内气氛转换为氮气N2。重复上述过程,直到检测不到二氯硅烷(SiH2Cl2)或氯(Cl2)。最后,在步骤S29中,将具有SiN钝化膜3的外延衬底9从炉中取出。
本文所述的方法在温度下降后吹扫氨气(NH3)和二氯硅烷(SiH2Cl2)。或者,可以在第二温度下中断二氯硅烷(SiH2Cl2)之后立即进行源气体的吹扫。在这种情况下,当炉子保持在氮气(N2)气氛中时,温度降至较低温度,例如500℃。
将描述根据该实施方案的方法的优点。在上述步骤S24中,炉内温度在相对较高的压力(例如高于30kPa)下升高到沉积温度。图4示出了在升温期间,覆盖有通过LPCVD技术形成的SiN钝化膜3的氮化物半导体层5的表面粗糙度相对于炉内压力的变化,其中表面粗糙度通过均方根(RMS)测量。
在通过氟酸(HF)去除沉积的SiN膜3之后,通过用原子力显微镜(AFM)检查氮化物半导体层5的表面以测量RMS。将装载温度TLOAD设定为400℃。参考图4,随着温度升高期间炉内压力的增加,表面粗糙度降低,或其表面质量提高。例如,大于30kPa的压力使表面的RMS值降低至小于0.32nm;并且大于100kPa的压力可以将表面RMS值降低至0.27nm。
在图2中所示的步骤S21中,将外延衬底9装载在炉内的装载温度TLOAD设定为低于500℃。图5示出了表面粗糙度RMS相对于装载温度TLOAD的变化,其中将炉子温度升高期间的压力设定为100kPa,即,几乎为空气压力,并且将从炉子的第一次排气到沉积开始的经过时间设定为5分钟,在该经过时间内,外延衬底9暴露于高温和低压下。
参考图5,随着装载温度TLOAD降低,表面粗糙度单调下降。装载温度TLOAD低于500℃时,表面粗糙度RMS为0.28nm。此外,装载温度TLOAD为约400℃时,表面粗糙度RMS为0.27nm。另外,本实施方案在第一温度(即装载温度TLOAD)下进行泄漏检查;因此,本步骤可以缩短外延衬底9在高温和低压条件下暴露的经过时间,即,从用于转换炉内气氛的第一次炉内排气到开始沉积的时间。
图6示出了表面粗糙度RMS相对于经过时间的变化,所述经过时间为从用于转换气氛的第一次炉内排气到开始沉积(即,供给二氯硅烷(SiH2Cl2)的时刻)的时间,这对应于衬底9在高温和低压条件下暴露的时间。实际上,排气和氨气(NH3)的供给重复多次,外延衬底9在高温和低压条件下暴露的时间比从第一次排气到开始沉积的时间短。
参见图6,随着经过时间变短,外延衬底9的表面粗糙度RMS逐渐地单调降低。当经过时间短于20分钟时,表面粗糙度RMS为约0.3nm。假设可接受的表面粗糙度RMS限制为小于0.35,则外延衬底9在这些条件下暴露的经过时间优选短于20分钟。
第二实施方案
将进一步研究在这些严苛条件下暴露的经过时间。在所描述的本方法中从步骤S25到步骤S26期间,即,在外延衬底9置于高温和低压条件下期间,氮(N2)可以容易地从外延衬底9的表面上解离,这降低了表面质量。为了抑制氮(N2)的解离,根据本发明的实施方案在下面描述的时刻开始沉积SiN钝化膜3,或者开始将气氛转换为氨气(NH3)。图7示出氮气(N2)的压力相对于温度T的变化,其中横轴表示绝对温度的倒数(1/T),而纵轴对应于以帕斯卡(Pa)为单位的压力。直线L1对应于氮的平衡压力。在温度和压力下降到图7中的阴影区域的条件下,可以加速氮从外延衬底9的表面的解离。图8还示出了以摄氏度为单位的温度与以帕斯卡为单位的氮气压力(N2)的关系,其中曲线L2对应于图7中所示的线性行为。
下面的等式(1)对应于图7中所示的直线L1,其中,T是以开尔文为单位的温度,P表示以帕斯卡为单位的压力。参数A、B和C分别是常数-10.1、12.5和0.434。
103·A/TC+B=exp(P/C)…(1)
转换上面的等式(1),将获得以下等式(2):
P=C·ln(103·A/TC+B)…(2)
在步骤S25中,在第一压力下升高炉内温度,当温度达到对应于平衡条件L1的临界温度Tc时,氮气(N2)的解离加速。因此,为了抑制氮的解离,将经过时间设定为尽可能短是非常重要且不可避免的,其中经过时间测量为从炉内温度达到上述临界温度TC的时刻到开始沉积SiN膜3的时刻。
图9示出了外延衬底9的表面粗糙度(以RMS为单位)相对于外延衬底9暴露于高温(高于临界温度)和低压的严苛条件下的经过时间的变化图。在通过氟酸(HF)去除沉积的SiN膜3之后,通过原子力显微镜(AFM)研究外延衬底9的表面粗糙度RMS。在获得图9中所示的结果时,将外延衬底9装入500℃的炉中。参见图9,表面粗糙度RMS随着经过时间变短而单调减小。具体而言,经过时间短于90分钟时,表面粗糙度小于0.41nm。当经过时间短于60分钟时,可以获得小于0.34nm的表面粗糙度,并且当经过时间短于30分钟时,可获得小于0.30nm的表面粗糙度。因此,根据本实施方案的方法优选在炉内温度达到由上述第一压力确定的临界温度后60分钟内开始沉积SiN膜3。考虑到步骤S26,其中步骤S26重复炉内排气至压力小于10Pa以及供给氨气(NH3);该方法进一步优选地在炉内温度达到临界温度后30分钟内开始沉积SiN膜3。
图10A至图10C示出了通过AFM技术获得的1μm×1μm的区域中的氮化物半导体层5的表面的形态,其中,图10A至图10C分别对应于小于0.35nm、0.35nm至0.50nm和大于0.50nm的表面粗糙度。在SiN膜3沉积在其上之前,氮化物半导体层5可以具有图10A中所示的表面粗糙度。图10A清楚地示出了原子层形成的梯级(step)和可能由位错引起的若干缺陷。当表面粗糙度RMS超过(例如)0.35nm时,氮化物半导体层5的表面可能由于氮(N2)的解离而引起凹坑,如图10B所示。此外,当表面粗糙度RMS超过0.5nm时,如图10C所示,表面不再显示由原子层形成的梯级,而是出现由氮(N2)的解离引起的大量的凹坑。出现在图10B中的凹坑的直径为5nm至20nm,深度为0.5nm至2nm,而图10C中观察到的凹坑不仅数量增多而且尺寸也扩大了。
如上所述,将经过时间设定为短于60分钟,则表面粗糙度RMS可以小于0.34nm,这意味着这种缩短的经过时间可以得到类似于图10A所示的平滑表面。另外,通过将第一压力(即,温度升高期间炉内的压力)设定为大于30kPa,半导体层5的表面粗糙度减小至小于0.32nm,这意味着可获得具有足够平滑表面的氮化物半导体层5。此外,当装载温度TLOAD设定为低于500℃时,氮化物半导体层5的表面粗糙度RMS减小至0.32nm,这使得氮化物半导体层5具有平滑表面。
在步骤S26中,在将炉内气氛由氮气(N2)转换至氨气(NH3)期间,氮化物半导体层5暴露于沉积温度和第二压力的苛刻条件下。因此,该方法必须将经过时间设定得尽可能短,优选地短于20分钟。步骤S26期间缩短的经过时间可以使氮化物半导体层5具有平滑表面。
进行沉积的第二温度可以低于900℃,这可以抑制氮化物半导体层5的表面质量不必要地降低。
步骤S26重复进行炉内排气至压力低于10Pa并且供给氨气(NH3)。炉内气氛的转换通常将炉内排气至小于1Pa的压力,然后在炉内供给氨气(NH3)至压力为1Pa至10Pa。但是,在高温下压力小于1Pa的条件可能加速半导体层表面质量的降低。因此,根据本实施方案的气氛转化重复进行炉内排气至压力为1Pa至10Pa而不进入小于1Pa的范围,并且供给氨气(NH3)若干次。
此外,可以在将二氯硅烷(SiH2Cl2)和氨气(NH3)的供给量设定为彼此相等的情况下进行SiN膜3的沉积。步骤S27(其中该方法将炉中的气氛从氨气(NH3)和二氯硅烷(SiH2Cl2)的混合物转换为氮气(N2))可以在温度下降之前在沉积温度下进行。优选尽可能快地从炉中排出SiH2Cl2中所含的氯(Cl2)。当在温度下降之后将气氛转换为氮气(N2)时,炉内的氨气(NH3)气氛可以进一步抑制氮化物半导体层5的表面劣化。氨气(NH3)气氛可以抑制氮原子从SiN膜3中的解离,也可以抑制氮气(N2)从氮化物半导体层5向SiN膜3的扩散。
此外,升高炉内温度的步骤S25可以进行炉的泄漏检查。泄漏检查在炉子排气和关闭所有供给管线后调查炉的气密性。泄漏检查通常在步骤S25之后在高温下进行,因为在高温下的检查可以提高其可靠性。本实施方案在升温之前在步骤S24中执行泄漏检查,或者在步骤S25中但在炉温达到由上述等式(1)定义的临界温度TC之前执行泄漏检查。用于泄漏检查的这些步骤可以缩短外延衬底在苛刻条件下暴露的经过时间。
此外,步骤S25将炉内温度升高到第二温度,即沉积温度,但是,在步骤S25结束时,炉内温度逐渐达到第二温度。因此,转换气氛的步骤S26可以在炉内温度达到临时温度的时刻开始进行排气,所述临时温度以℃计比所述第二温度低第二温度和第一温度之差的10%。向氨气(NH3)的转换(包括排气和供给氨气(NH3))可以在温度最终升高到第二温度期间进行,并且可以缩短经过时间。
第三实施方案
接下来,作为本发明的第三实施方案,将描述氮化物半导体器件的形成方法,其中氮化物半导体器件设置有SiN钝化膜3。图11A至图13B是在该方法的各个步骤中的半导体器件的截面图。尽管第三实施方案聚焦于主要由氮化物半导体材料(通常是氮化镓(GaN))制成的半导体器件类型的高电子迁移率晶体管(HEMT),然而第三实施方案的方法也可以适用于其他类型的半导体器件并且由其他半导体材料制成。
如图11A所示,该实施方案的方法首先在衬底10上形成半导体堆叠体20。衬底10可以由碳化硅(SiC)制成,其主表面上生长有半导体堆叠体20,其具有表面取向(0001)。因此,半导体堆叠体20具有沿晶体取向[0001]的堆叠方向。从衬底10侧起,半导体堆叠体包括成核层12、沟道层14、阻挡层16和盖层18。成核层12可以由氮化铝(AlN)制成,具有达到纳米级的厚度。沟道层14可以由未掺杂的氮化镓(GaN)层制成,厚度为约1μm。阻挡层16可以由n型氮化铝镓(n-AlGaN)制成,厚度为20nm。盖层18可以由n型GaN制成,厚度为5nm。
此后,如图11B所示,该方法通过LPCVD技术将SiN钝化膜26沉积在半导体堆叠体20上。SiN钝化膜26的沉积工序的细节与第一和第二实施方案中的前述工序的细节基本相同。SiN钝化膜26的沉积温度设定为(例如)800℃。二氯硅烷(SiH2Cl2))和氨气(NH3)用作硅(Si)和氮气(N2)的源气体。SiN钝化膜26可具有约100nm的厚度。
此后,如图11C所示,光刻可以在SiN钝化膜26上形成图案化光刻胶50。图案化光刻胶50在将要形成源极和漏极的位置处具有开口50a。使用含氟(F)反应气体的反应离子蚀刻(RIE)可以在SiN钝化膜26中形成开口26a,其中开口26a反映了光刻胶中的开口50a。
此后,如图12A所示,光刻可以在SiN钝化膜26上形成另一个图案化光刻胶51,其中该另一个光刻胶51也具有完全覆盖在SiN钝化膜26中形成的开口26a的开口51a。也就是说,在SiN钝化膜26中的开口26a内暴露的半导体堆叠体20的表面被完全暴露于光刻胶51中的开口51a内。开口51a暴露SiN钝化膜26的表面和SiN钝化膜26中的开口26a,开口26a中暴露半导体堆叠体20的表面。使用含氯(Cl2)反应气体的RIE工艺可以蚀刻在钝化膜26中的开口26a内暴露的半导体堆叠体20。即,暴露于开口26a内的盖层18和也在开口26a内的阻挡层16的一部分可以通过RIE工艺蚀刻。在使用氯气的RIE工艺期间,SiN钝化膜26的位于开口26a的周边的表面暴露于氯等离子体。
此后,通过(例如)金属蒸发和在金属蒸发之后进行的金属的剥离(lift-off)技术形成源极22和漏极24,以便通过SiN钝化膜26中的开口26a与阻挡层16接触。具体而言,金属蒸发沉积厚度为30nm的钛(Ti)和厚度为300nm的铝(Al)的堆叠金属。在可替代的方案中,可以用钽(Ta)替代Ti。金属蒸发可以在掩模51上沉积残留金属23;但是用溶剂溶解掩模51的剥离技术可以去除掩模51上的残留金属23。通过使在开口26a内和SiN钝化膜26上残留的堆叠金属在约500℃的温度下合金化,可以形成源极22和漏极24。高于550℃的合金化温度可有效降低源极22和漏极24的接触电阻。
此后,如图12B所示,光刻可以在半导体堆叠体20上制备另一个图案化光刻胶52,其中图案化光刻胶52在将要形成栅极28的位置处具有开口52a。使用图案化光刻胶52作为掩模的RIE工艺可以在SiN钝化膜26中形成栅极开口26b。在RIE工艺之后去除图案化光刻胶52。
此后,光刻可以在绝缘膜26上形成另一个图案化光刻胶,这在图中未示出。所述另一个图案化光刻胶具有对应于栅极金属的开口;也就是说,所述另一个图案化光刻胶中的开口与SiN钝化膜26中的栅极开口26b完全重叠。蒸发镍(Ni)和金(Au)的堆叠金属,以便通过栅极开口26b与盖层18接触,并且进行剥离工艺以去除沉积在所述另一个图案化光刻胶上的残留金属,如图13A所示,形成具有T形截面的栅极。厚度为约50nm的镍(Ni)与盖层18形成肖特基接触;而厚度为约400nm的金(Au)可以降低栅极电阻。
此后,如图13B所示,在源极22、漏极24和栅极28上以及在暴露于电极22至28之间的SiN钝化膜26上沉积另一个绝缘膜30。绝缘膜30的厚度可以为(例如)500nm,并且可以由SiN制成。形成开口30a以暴露源极22和栅极24的顶部,由此可以完成根据本实施方案的HEMT 1A的形成方法。
根据如此描述的方法,SiN钝化膜26(其通过LPCVD技术以图2所示的顺序沉积)可以抑制半导体堆叠体20的表面(即,盖层18的表面)质量的劣化。图14示出了在HEMT 1A的源极浮置(即,不与任何地方连接)、并且在栅极和漏极之间提供反向偏压的条件下测量的栅极漏电流的行为。对于通过下表中的条件沉积的SiN钝化膜26,获得行为G1至G3。测量中使用的HEMT具有以下尺寸:源极-漏极长度LDS为7.2μm,栅极-源极长度LGS为1.4μm,栅极-漏极长度LGD为5.2μm,栅极长度LG为0.6μm并且栅极宽度WG为500μm。
表I
如上表清楚地示出,与其他条件G2和G3相比,条件G1可以显著地抑制半导体堆叠体20的表面粗糙度RMS,其中条件G1设定装载温度为400℃,升温过程中炉内的第一压力为100kPa,即几乎为空气压力,并且从第一次排气到供给SiH2Cl2的经过时间为5分钟。如图14清楚地示出,随着表面粗糙度RMS变小,栅极漏电流变小。
下面的表II总结了第二实施方案的结果,即测定相对于经过时间的表面粗糙度RMS,该经过时间为从温度达到由第一氮气压力(N2)引起的临界温度TC的时刻到通过供给二氯硅烷(SiH2Cl2)开始进行沉积的时间。如下表II清楚地表明,当将经过时间设定为15分钟并且装载温度TLOAD设定为400℃时,表面粗糙度RMS和栅极漏电流显著降低;然而,装载温度TLOAD为600℃且经过时间为90分钟的条件表明,表面粗糙度RMS(=0.55nm)和栅极漏电流(=7.1mA)显著劣化。
表II
虽然本文已出于说明的目的描述了本发明的特定实施方案,但许多修改和变化对于本领域技术人员而言是显而易见的。例如,所描述的实施方案可以根据必要的主题和预期的功能彼此组合。此外,第三实施方案集中于电子器件类型的HEMT;本发明的精神和范围可适用于其他类型的电子器件。因此,所附权利要求旨在包含落入本发明的真实精神和范围内的所有这些修改和变化。
Claims (14)
1.一种在氮化物半导体层上沉积氮化硅(SiN)膜的方法,包括以下步骤:
将包括所述氮化物半导体层的外延衬底装入处于低于500℃的第一温度的炉内;
将所述炉内的气氛由空气转换为氮气(N2),并在所述转换后,将所述炉内的氮气的压力设定为高于30kPa且低于100kPa的第一压力;
将所述炉内的温度升至高于750℃的第二温度,同时保持所述炉内的压力为所述第一压力;
在20分钟内将所述炉内的气氛由氮气(N2)转换为氨气(NH3);
将所述炉内的压力设定为低于100Pa的第二压力;和
通过供给二氯硅烷(SiH2Cl2)和氨(NH3)来沉积所述氮化硅膜。
2.根据权利要求1所述的方法,
其中所述第二温度低于900℃。
3.根据权利要求1或2所述的方法,
其中将气氛转换为氨气(NH3)的步骤重复以下步骤:
将所述炉排气至低于20Pa但高于1Pa的压力;和
供给氨(NH3)。
4.根据权利要求1或2所述的方法,
其中沉积所述氮化硅膜的步骤中所供给的二氯硅烷和氨的供给量彼此相等。
5.根据权利要求1或2所述的方法,
在将气氛由空气转换为氮气(N2)的步骤之后但在将所述炉内的温度升至第二温度的步骤之前,进一步包括检查所述炉内的气密性的步骤。
6.根据权利要求1或2所述的方法,
在沉积所述氮化硅膜的步骤之后进一步包括以下步骤:
中断二氯硅烷的供给;
将所述炉内的温度设定为低于所述第二温度;和
将所述炉内的气氛由氨气(NH3)转换为氮气(N2)。
7.一种在氮化物半导体层上沉积氮化硅(SiN)膜的方法,包括以下步骤:
将包括所述氮化物半导体层的外延衬底装入处于低于500℃的第一温度的炉内;
将所述炉内的气氛由空气转换为氮气(N2),并在所述转换后,将所述炉内的氮气的压力设定为高于30kPa且低于100kPa的第一压力;
逐渐将所述炉内的温度升至高于750℃的第二温度,同时保持所述炉内的压力为所述第一压力;
在所述炉内的温度达到临时温度的时刻开始进行排气,所述临时温度比所述第二温度低所述第二温度和所述第一温度之差的10%,并在20分钟内将所述炉内的气氛由氮气(N2)转换为氨气(NH3);
将所述炉内的压力设定为低于100Pa的第二压力;和
通过供给二氯硅烷(SiH2Cl2)和氨(NH3)来沉积所述氮化硅膜。
8.一种在氮化物半导体层上形成由氮化硅(SiN)制成的钝化膜的方法,该方法包括以下步骤:
将包括所述氮化物半导体层的外延衬底装入处于第一温度的炉内;
将所述炉内的气氛由空气转换为氮气(N2),并在所述转换后,将所述炉内的氮气的压力设定为第一压力;
将所述炉内的温度升至高于700℃的第二温度;
将所述炉内的气氛转换为氨气(NH3);和
在所述炉内供给二氯硅烷(SiH2Cl2),以开始在所述氮化物半导体层上沉积所述钝化膜,
其中设定升高温度的步骤和将气氛转换为氨气的步骤的经过时间为短于60分钟,将炉内温度达到由以下等式定义的临界温度TC的时刻到开始沉积的时间测定为所述经过时间:
103·A/TC+B=exp(P/C),
其中P是以帕斯卡(Pa)为单位的所述第一压力,TC是以开尔文(K)为单位的所述临界温度,A至C分别是-10.1、12.5和0.434。
9.根据权利要求8所述的方法,
其中所述第一温度为500℃以下。
10.根据权利要求8或9所述的方法,
在将气氛转换为氮气(N2)的步骤之后但在升高所述炉内的温度的步骤之前,进一步包括检查所述炉内的气密性的步骤。
11.根据权利要求8或9所述的方法,
其中将气氛转换为氨气(NH3)的步骤重复以下步骤:
将所述炉排气至1Pa至10Pa的压力,并且
供给氨(NH3)。
12.根据权利要求8或9所述的方法,
其中所述第二温度低于900℃。
13.根据权利要求8或9所述的方法,
其中供给二氯硅烷的步骤将二氯硅烷和氨的供给量设置为彼此相等。
14.一种在氮化物半导体层上形成由氮化硅(SiN)制成的钝化膜的方法,该方法包括以下步骤:
将包括所述氮化物半导体层的外延衬底装入处于第一温度的炉内;
将所述炉内的气氛由空气转换为氮气(N2),并在所述转换后,将所述炉内的氮气的压力设定为第一压力;
逐渐将所述炉内的温度升至高于700℃的第二温度;
在所述炉内的温度达到临时温度的时刻开始进行排气,所述临时温度比所述第二温度低所述第二温度和所述第一温度之差的10%,并将所述炉内的气氛转换为氨气(NH3);和
在所述炉内供给二氯硅烷(SiH2Cl2),以开始在所述氮化物半导体层上沉积所述钝化膜,
其中设定升高温度的步骤和将气氛转换为氨气的步骤的经过时间为短于60分钟,将炉内温度达到由以下等式定义的临界温度TC的时刻到开始沉积的时间测定为所述经过时间:
103·A/TC+B=exp(P/C),
其中P是以帕斯卡(Pa)为单位的所述第一压力,TC是以开尔文(K)为单位的所述临界温度,A至C分别是-10.1、12.5和0.434。
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