CN109542394A - 控制器、半导体存储器装置及具有它们的存储器*** - Google Patents
控制器、半导体存储器装置及具有它们的存储器*** Download PDFInfo
- Publication number
- CN109542394A CN109542394A CN201810479164.5A CN201810479164A CN109542394A CN 109542394 A CN109542394 A CN 109542394A CN 201810479164 A CN201810479164 A CN 201810479164A CN 109542394 A CN109542394 A CN 109542394A
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Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
- G06F7/58—Random or pseudo-random number generators
- G06F7/588—Random number generators, i.e. based on natural stochastic processes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
- G06F13/1668—Details of memory controller
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
- G06F11/0751—Error or fault detection not based on redundancy
- G06F11/0754—Error or fault detection not based on redundancy by exceeding limits
- G06F11/076—Error or fault detection not based on redundancy by exceeding limits by exceeding a count or rate limit, e.g. word- or bit count limit
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
- G06F11/0793—Remedial or corrective actions
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/06—Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication
- G06F12/0638—Combination of memories, e.g. ROM and RAM such as to permit replacement or supplementing of words in one module by words in another module
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0638—Organizing or formatting or addressing of data
- G06F3/064—Management of blocks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0646—Horizontal data movement in storage systems, i.e. moving data in between storage devices or systems
- G06F3/0652—Erasing, e.g. deleting, data cleaning, moving of data to a wastebasket
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40618—Refresh operations over multiple banks or interleaving
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5644—Multilevel memory comprising counting devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5647—Multilevel memory with bit inversion arrangement
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Human Computer Interaction (AREA)
- Quality & Reliability (AREA)
- Computational Mathematics (AREA)
- Pure & Applied Mathematics (AREA)
- Mathematical Optimization (AREA)
- Mathematical Analysis (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170122393A KR20190033791A (ko) | 2017-09-22 | 2017-09-22 | 컨트롤러, 반도체 메모리 장치 및 이들을 포함하는 메모리 시스템 |
KR10-2017-0122393 | 2017-09-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109542394A true CN109542394A (zh) | 2019-03-29 |
Family
ID=65807954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810479164.5A Withdrawn CN109542394A (zh) | 2017-09-22 | 2018-05-18 | 控制器、半导体存储器装置及具有它们的存储器*** |
Country Status (3)
Country | Link |
---|---|
US (1) | US20190096485A1 (ko) |
KR (1) | KR20190033791A (ko) |
CN (1) | CN109542394A (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113220219A (zh) * | 2020-01-21 | 2021-08-06 | 爱思开海力士有限公司 | 储存装置、操作控制器和半导体存储器装置的方法 |
CN115357523A (zh) * | 2022-07-08 | 2022-11-18 | 镕铭微电子(济南)有限公司 | 一种随机化方法及数据读写方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11294820B2 (en) * | 2019-06-28 | 2022-04-05 | Micron Technology, Inc. | Management of programming mode transitions to accommodate a constant size of data transfer between a host system and a memory sub-system |
US10854304B1 (en) * | 2019-12-03 | 2020-12-01 | Micron Technology, Inc. | Apparatus and methods for seeding operations concurrently with data line set operations |
US11494254B2 (en) * | 2019-12-20 | 2022-11-08 | Cnex Labs, Inc. | Storage system with predictive adjustment mechanism and method of operation thereof |
KR20210094696A (ko) * | 2020-01-21 | 2021-07-30 | 삼성전자주식회사 | 비휘발성 메모리 장치, 스토리지 장치, 및 그것의 프로그램 방법 |
KR20220064096A (ko) * | 2020-11-11 | 2022-05-18 | 에스케이하이닉스 주식회사 | 메모리 시스템 |
Citations (5)
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CN102737719A (zh) * | 2011-04-15 | 2012-10-17 | 三星电子株式会社 | 非易失性存储器器件、其操作方法以及包括其的*** |
US20130121090A1 (en) * | 2011-11-14 | 2013-05-16 | SK Hynix Inc. | Semiconductor memory device, operating method thereof, and data storage apparatus including the same |
US20140037086A1 (en) * | 2012-07-31 | 2014-02-06 | Changkyu Seol | Memory system generating random number and method generating random number |
US20140372714A1 (en) * | 2011-04-19 | 2014-12-18 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and nonvolatile memory system and random data read method thereof |
US20170090764A1 (en) * | 2015-09-30 | 2017-03-30 | Seagate Technology Llc | Data randomization using memory block access counts |
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US8154918B2 (en) * | 2008-06-30 | 2012-04-10 | Sandisk Il Ltd. | Method for page- and block based scrambling in non-volatile memory |
KR20100124087A (ko) * | 2009-05-18 | 2010-11-26 | 삼성전자주식회사 | 메모리 컨트롤러, 그것을 포함하는 메모리 시스템 그리고 그것의 동작 방법 |
KR101678915B1 (ko) * | 2010-12-27 | 2016-11-23 | 삼성전자주식회사 | 플래시 메모리 장치, 그것의 데이터 랜덤화 방법, 및 그것을 포함하는 메모리 시스템 |
KR101736337B1 (ko) * | 2011-02-28 | 2017-05-30 | 삼성전자주식회사 | 비휘발성 메모리 장치, 상기 메모리 장치를 제어하는 컨트롤러, 및 상기 컨트롤러 동작 방법 |
KR20120107336A (ko) * | 2011-03-21 | 2012-10-02 | 삼성전자주식회사 | 메모리 시스템 및 그것의 어드레싱 방법 |
KR102036348B1 (ko) * | 2012-02-27 | 2019-10-24 | 삼성전자 주식회사 | 메모리 컨트롤러 및 이의 동작 방법 |
US20140115234A1 (en) * | 2012-10-24 | 2014-04-24 | Samsung Electronics Co., Ltd. | Memory system comprising nonvolatile memory device and related method of operation |
KR102069864B1 (ko) * | 2012-11-05 | 2020-01-23 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 이의 동작 방법 |
KR102211220B1 (ko) * | 2013-11-12 | 2021-02-03 | 에스케이하이닉스 주식회사 | 반도체 장치 및 이의 동작 방법 |
KR102133542B1 (ko) * | 2013-12-03 | 2020-07-14 | 에스케이하이닉스 주식회사 | 랜더마이저 및 디랜더마이저를 포함하는 메모리 시스템 |
US10372948B2 (en) * | 2015-12-15 | 2019-08-06 | Taiwan Semiconductor Manufacturing Company Ltd. | Scrambling apparatus and method thereof |
US10019314B2 (en) * | 2016-04-27 | 2018-07-10 | Silicon Motion Inc. | Flash memory apparatus and storage management method for flash memory |
US10381090B2 (en) * | 2017-03-31 | 2019-08-13 | Samsung Electronics Co., Ltd. | Operation method of nonvolatile memory device and storage device |
KR20190074890A (ko) * | 2017-12-20 | 2019-06-28 | 에스케이하이닉스 주식회사 | 메모리 컨트롤러 및 그 동작 방법 |
-
2017
- 2017-09-22 KR KR1020170122393A patent/KR20190033791A/ko not_active Application Discontinuation
-
2018
- 2018-04-25 US US15/962,460 patent/US20190096485A1/en not_active Abandoned
- 2018-05-18 CN CN201810479164.5A patent/CN109542394A/zh not_active Withdrawn
Patent Citations (6)
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CN102737719A (zh) * | 2011-04-15 | 2012-10-17 | 三星电子株式会社 | 非易失性存储器器件、其操作方法以及包括其的*** |
US20120265928A1 (en) * | 2011-04-15 | 2012-10-18 | Kui-Yon Mun | Non-volatile memory devices, methods of operating non-volatile memory devices, and systems including the same |
US20140372714A1 (en) * | 2011-04-19 | 2014-12-18 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and nonvolatile memory system and random data read method thereof |
US20130121090A1 (en) * | 2011-11-14 | 2013-05-16 | SK Hynix Inc. | Semiconductor memory device, operating method thereof, and data storage apparatus including the same |
US20140037086A1 (en) * | 2012-07-31 | 2014-02-06 | Changkyu Seol | Memory system generating random number and method generating random number |
US20170090764A1 (en) * | 2015-09-30 | 2017-03-30 | Seagate Technology Llc | Data randomization using memory block access counts |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113220219A (zh) * | 2020-01-21 | 2021-08-06 | 爱思开海力士有限公司 | 储存装置、操作控制器和半导体存储器装置的方法 |
CN115357523A (zh) * | 2022-07-08 | 2022-11-18 | 镕铭微电子(济南)有限公司 | 一种随机化方法及数据读写方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20190033791A (ko) | 2019-04-01 |
US20190096485A1 (en) | 2019-03-28 |
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