CN109494264A - A kind of crystal silicon solar batteries and preparation method thereof - Google Patents
A kind of crystal silicon solar batteries and preparation method thereof Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 89
- 239000010703 silicon Substances 0.000 title claims abstract description 89
- 239000013078 crystal Substances 0.000 title claims abstract description 81
- 238000002360 preparation method Methods 0.000 title description 5
- 239000011159 matrix material Substances 0.000 claims abstract description 76
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 230000006698 induction Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 201
- 238000002161 passivation Methods 0.000 claims description 18
- 239000004411 aluminium Substances 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 239000011241 protective layer Substances 0.000 claims description 11
- 230000004907 flux Effects 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 30
- 230000008569 process Effects 0.000 abstract description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 14
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract description 5
- 238000007667 floating Methods 0.000 abstract description 4
- 238000005215 recombination Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 4
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 4
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 210000004209 hair Anatomy 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000009279 wet oxidation reaction Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
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- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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Abstract
The invention discloses a kind of crystal silicon solar batteries, including p-type matrix；The side to light of the p-type matrix successively includes n type semiconductor layer and front electrode outward；It successively includes dielectric layer and rear electrode that the backlight of the p-type matrix, which faces out,；The dielectric layer is the dielectric layer with high fixed positive charge；The dielectric layer forms N-type inversion layer in the surface induction that the p-type matrix is contacted with the dielectric layer；The dielectric layer has the pattern that matches with the rear electrode, make the rear electrode can directly with the p-type substrate contact.The present invention is formed about floating junction on the shady face surface of p-type matrix, inhibit the surface recombination of shady face, increase the photoelectric conversion efficiency of crystal silicon solar batteries, simultaneously, above-mentioned dielectric layer can be arranged by simple depositing operation, aluminium oxide in compared to the prior art, low in cost, simple process.The present invention goes back while providing a kind of production method of crystal silicon solar batteries with above-mentioned beneficial effect.
Description
Technical field
The present invention relates to area of solar cell, more particularly to a kind of crystal silicon solar batteries and preparation method thereof.
Background technique
Solar energy is as a kind of renewable energy, from invention initial stage just by global attention, into after 21 century, more
It is developed come more solar cell power generation technologies, wherein the PERC battery in crystal silicon battery is because of its transformation efficiency
Height, and industrialized production can be put into, therefore PERC (the Passivated Emitter and of passivating back is carried out using dielectric layer
RearCell) extensive attention of the crystal silicon solar battery by photovoltaic industry, production capacity are promoted rapidly, are increased from the 5GW in the end of the year 2015
To the 35GW in the end of the year 2017, the ratio for accounting for crystal silicon battery aggregated capacity is also continuously improved.
But the passivating back of existing PERC battery mainly uses Al2O3, and Al2O3Depositing device is expensive, makes
The cost of PERC crystal silicon battery is high, and the cost of producing line upgrading is also more high, therefore, find out one it is effective at
The passivating back method of this cheap and simple process crystal silicon solar batteries, being that those skilled in the art are urgently to be resolved asks
Topic.
Summary of the invention
The object of the present invention is to provide a kind of crystal silicon solar batteries and preparation method thereof, to solve crystal silicon in the prior art
Rear surface of solar cell is passivated problem with high costs.
In order to solve the above technical problems, the present invention provides a kind of crystal silicon solar batteries, including p-type matrix；
The side to light of the p-type matrix successively includes n type semiconductor layer and front electrode outward；
It successively includes dielectric layer and rear electrode that the backlight of the p-type matrix, which faces out,；
The dielectric layer is the dielectric layer with high fixed positive charge；
The dielectric layer forms N-type inversion layer in the surface induction that the p-type matrix is contacted with the dielectric layer；
The dielectric layer has the pattern that matches with the rear electrode, make the rear electrode can directly with the P
Mold base contact.
Optionally, in above-mentioned crystal silicon solar batteries, the crystal silicon solar batteries further include insulating layer；
The insulating layer is set between the rear electrode and the N-type inversion layer, for preventing the rear electrode
It is conducted between the N-type inversion layer.
Optionally, in above-mentioned crystal silicon solar batteries, the crystal silicon solar batteries further include protective layer；
The protective layer is set to the insulating layer and the dielectric layer surface, for protecting the insulating layer and being given an account of
Matter layer is scratched from machinery and physical chemistry corrosion.
Optionally, in above-mentioned crystal silicon solar batteries, the silicon solar cell further includes P+ type layer；
The P+ type layer is set between the rear electrode and the p-type matrix；
The doping concentration of the P+ type layer is greater than the doping concentration of the p-type matrix.
Optionally, in above-mentioned crystal silicon solar batteries, the rear electrode is metal aluminium electrode.
Optionally, in above-mentioned crystal silicon solar batteries, the crystal silicon solar batteries further include passivation layer；
The passivation layer is set between the n type semiconductor layer and the front electrode.
Optionally, in above-mentioned crystal silicon solar batteries, the crystal silicon solar batteries further include anti-reflection layer；
The anti-reflection layer is set between the passivation layer and the front electrode, is entered in the passivation layer for increasing
Luminous flux.
Optionally, in above-mentioned crystal silicon solar batteries, the anti-reflection layer and the passivation layer are silicon nitride.
The present invention also provides a kind of production methods of crystal silicon solar batteries, comprising:
P-type matrix is provided；
In the side to light of the p-type matrix, n type semiconductor layer is set；
Dielectric layer is set in the shady face of the p-type matrix, the dielectric layer is the dielectric layer with high fixed positive charge；
Front electrode is set in the N-type semiconductor layer surface, and is arranged in the dielectric layer surface according to predetermined pattern
Rear electrode enables the rear electrode and the p-type substrate contact, obtains the crystal silicon solar batteries.
Optionally, in the production method of above-mentioned crystal silicon solar batteries, it is described in the dielectric layer surface according to default
Pattern setting rear electrode specifically includes:
Aluminium paste is printed according to predetermined pattern in the dielectric layer surface；
The p-type matrix oversintering of aluminium paste will be printed, metallization is completed, obtains the rear electrode.
Crystal silicon solar batteries provided by the present invention, including p-type matrix；The side to light of the p-type matrix is outward successively
Including n type semiconductor layer and front electrode；It successively includes dielectric layer and rear electrode that the backlight of the p-type matrix, which faces out,；Institute
Stating dielectric layer is the dielectric layer with high fixed positive charge；The table that the dielectric layer is contacted in the p-type matrix with the dielectric layer
Face incudes to form N-type inversion layer；The dielectric layer has the pattern matched with the rear electrode, makes the rear electrode can
Directly with the p-type substrate contact.Crystal silicon solar batteries provided by the invention, using shady face with high fixed positive charge
Dielectric layer incudes to form N-type inversion layer in p-type matrix surface, the back of N-type inversion layer and p-type matrix in crystal silicon solar batteries
Smooth surface surface is formed about floating junction, it is suppressed that the surface recombination of shady face increases the photoelectric conversion of crystal silicon solar batteries
Efficiency, meanwhile, above-mentioned dielectric layer can be arranged by simple depositing operation, compared to the prior art in aluminium oxide, it is low in cost,
Simple process.
Detailed description of the invention
It, below will be to embodiment or existing for the clearer technical solution for illustrating the embodiment of the present invention or the prior art
Attached drawing needed in technical description is briefly described, it should be apparent that, the accompanying drawings in the following description is only this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is a kind of structural schematic diagram of specific embodiment of crystal silicon solar batteries provided by the invention；
Fig. 2 is the structural schematic diagram of another specific embodiment of crystal silicon solar batteries provided by the invention；
Fig. 3 is the structural schematic diagram of another specific embodiment of crystal silicon solar batteries provided by the invention；
Fig. 4 is also a kind of structural schematic diagram of specific embodiment of crystal silicon solar batteries provided by the invention；
Fig. 5 is a kind of process signal of specific embodiment of the production method of crystal silicon solar batteries provided by the invention
Figure；
Fig. 6 is that the process of another specific embodiment of the production method of crystal silicon solar batteries provided by the invention is shown
It is intended to.
Specific embodiment
In order to enable those skilled in the art to better understand the solution of the present invention, with reference to the accompanying drawings and detailed description
The present invention is described in further detail.Obviously, described embodiments are only a part of the embodiments of the present invention, rather than
Whole embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall within the protection scope of the present invention.
Core of the invention is to provide a kind of crystal silicon solar batteries, and a kind of structural schematic diagram of specific embodiment is such as
Shown in Fig. 1, it is called specific embodiment one, including p-type matrix 101；
The side to light of aforementioned p-type matrix 101 successively includes n type semiconductor layer 102 and front electrode 103 outward；
It successively includes dielectric layer 104 and rear electrode 105 that the backlight of aforementioned p-type matrix 101, which faces out,；
Above-mentioned dielectric layer 104 is the dielectric layer 104 with high fixed positive charge；
Above-mentioned dielectric layer 104 forms N-type transoid in the surface induction that aforementioned p-type matrix 101 is contacted with above-mentioned dielectric layer 104
Layer 106；
The dielectric layer 104 has the pattern matched with above-mentioned rear electrode 105, makes above-mentioned rear electrode 105 can be straight
It connects and is contacted with aforementioned p-type matrix 101.
Further, above-mentioned crystal silicon solar batteries are the solar battery that side to light passes through surface wool manufacturing processing, too
Positive energy battery is substantially increased the absorbability of light, photoelectric conversion efficiency can also greatly improve after surface wool manufacturing.
Further, aforementioned p-type matrix 101 is P-type silicon, and above-mentioned N-type semiconductor is phosphorus doping N-type silicon.
Further, above-mentioned crystal silicon solar batteries further include passivation layer 111；Above-mentioned passivation layer 111 is set to above-mentioned N
Between type semiconductor layer 102 and above-mentioned front electrode 103, it is also provided with passivation layer 111 in above-mentioned crystal silicon solar batteries side to light,
It is matched with the dielectric layer 104 of shady face, reaches stronger passivation effect, can further promote above-mentioned crystal silicon solar batteries
Generating efficiency.
Further, above-mentioned crystal silicon solar batteries further include anti-reflection layer 112；Above-mentioned anti-reflection layer 112 is set to above-mentioned
Between passivation layer 111 and above-mentioned front electrode 103, for increasing the luminous flux into above-mentioned passivation layer 111.Above-mentioned anti-reflection layer
112 can be anti-reflection film, by controlling the refractive index and film thickness of anti-reflection layer 112, allow the reflection light of 112 upper and lower surface of anti-reflection layer
It cancels out each other because of opposite in phase, to increase the luminous flux into above-mentioned crystal silicon solar batteries.
Further, above-mentioned dielectric layer 104 can be silicon nitride layer.
Further, above-mentioned front electrode 103 can be metallic silver electrode, and above-mentioned metal silver electrode can be with above-mentioned N-type
Semiconductor layer 102 forms Ohmic contact.
The structural schematic diagram for being additionally arranged the crystal silicon solar batteries of above-mentioned anti-reflection layer and above-mentioned passivation layer is as shown in Figure 2.
Crystal silicon solar batteries provided by the present invention, including p-type matrix 101；The side to light of aforementioned p-type matrix 101 to
It outside successively include n type semiconductor layer 102 and front electrode 103；It successively includes medium that the backlight of aforementioned p-type matrix 101, which faces out,
Layer 104 and rear electrode 105；Above-mentioned dielectric layer 104 is the dielectric layer 104 with high fixed positive charge；Above-mentioned dielectric layer 104 is upper
It states the surface induction that p-type matrix 101 is contacted with above-mentioned dielectric layer 104 and forms N-type inversion layer 106；The dielectric layer 104 have with
The pattern that above-mentioned rear electrode 105 matches contact above-mentioned rear electrode 105 can directly with aforementioned p-type matrix 101.This hair
The crystal silicon solar batteries of bright offer, using the dielectric layer 104 with high fixed positive charge of shady face, on 101 surface of p-type matrix
Induction forms N-type inversion layer 106, and N-type inversion layer 106 and p-type matrix 101 are near the shady face surface of crystal silicon solar batteries
Forming floating junction, it is suppressed that the surface recombination of shady face increases the photoelectric conversion efficiency of crystal silicon solar batteries, meanwhile, it is above-mentioned
Dielectric layer 104 can be arranged by simple depositing operation, compared to the prior art in aluminium oxide, low in cost, simple process.
On the basis of specific embodiment one, the structure of above-mentioned shady face is further improved, is embodied
Mode two, structural schematic diagram is as shown in figure 3, include p-type matrix 101；
The side to light of aforementioned p-type matrix 101 successively includes n type semiconductor layer 102 and front electrode 103 outward；
It successively includes dielectric layer 104 and rear electrode 105 that the backlight of aforementioned p-type matrix 101, which faces out,；
Above-mentioned dielectric layer 104 is the dielectric layer 104 with high fixed positive charge；
Above-mentioned dielectric layer 104 forms N-type transoid in the surface induction that aforementioned p-type matrix 101 is contacted with above-mentioned dielectric layer 104
Layer 106；
The dielectric layer 104 has the pattern matched with above-mentioned rear electrode 105, makes above-mentioned rear electrode 105 can be straight
It connects and is contacted with aforementioned p-type matrix 101；
Above-mentioned crystal silicon solar batteries further include insulating layer 107；
Above-mentioned insulating layer 107 is set between above-mentioned rear electrode 105 and above-mentioned N-type inversion layer 106, above-mentioned for preventing
It is conducted between rear electrode 105 and above-mentioned N-type inversion layer 106；
Above-mentioned crystal silicon solar batteries further include protective layer 108；
Above-mentioned protective layer 108 is set to 104 surface of above-mentioned insulating layer 107 and above-mentioned dielectric layer, for protecting above-mentioned insulation
Layer 107 and above-mentioned dielectric layer 104 are scratched from machinery and physical chemistry corrosion.
Present embodiment and above-mentioned specific embodiment the difference is that, present embodiment further limits
The structure of the shady face of above-mentioned crystal silicon solar batteries is determined, remaining structure is identical as above-mentioned specific embodiment, herein not
It is reinflated to repeat.
Further, above-mentioned insulating layer 107 can be the silica of thermal oxide or wet oxidation formation, prevent above-mentioned back
It is in contact generation electric leakage between face electrode 105 and above-mentioned N-type inversion layer 106, reduces the photoelectricity of above-mentioned crystal silicon solar batteries
Transfer efficiency.
Further, above-mentioned protective layer 108 can be silicon nitride, silicon oxynitride or silica, play and give an account of in protection
The effect of matter layer 104 and above-mentioned insulating layer 107.
It should be noted that present embodiment takes a single example, in actual production, above-mentioned insulation can also be only set
Layer 107, or above-mentioned protective layer 108 is only set.
On the basis of above-mentioned specific embodiment, further to above-mentioned rear electrode 105 and aforementioned p-type matrix 101
Junction limits, and obtains specific embodiment three, and structural schematic diagram is as shown in figure 4, include p-type matrix 101；
The side to light of aforementioned p-type matrix 101 successively includes n type semiconductor layer 102 and front electrode 103 outward；
It successively includes dielectric layer 104 and rear electrode 105 that the backlight of aforementioned p-type matrix 101, which faces out,；
Above-mentioned dielectric layer 104 is the dielectric layer 104 with high fixed positive charge；
Above-mentioned dielectric layer 104 forms N-type transoid in the surface induction that aforementioned p-type matrix 101 is contacted with above-mentioned dielectric layer 104
Layer 106；
The dielectric layer 104 has the pattern matched with above-mentioned rear electrode 105, makes above-mentioned rear electrode 105 can be straight
It connects and is contacted with aforementioned p-type matrix 101；
Above-mentioned crystal silicon solar batteries further include insulating layer 107；
Above-mentioned insulating layer 107 is set between above-mentioned rear electrode 105 and above-mentioned N-type inversion layer 106, above-mentioned for preventing
It is conducted between rear electrode 105 and above-mentioned N-type inversion layer 106；
Above-mentioned crystal silicon solar batteries further include protective layer 108；
Above-mentioned protective layer 108 is set to 104 surface of above-mentioned insulating layer 107 and above-mentioned dielectric layer, for protecting above-mentioned insulation
Layer 107 and above-mentioned dielectric layer 104 are scratched from machinery and physical chemistry corrosion；
Above-mentioned silicon solar cell further includes P+ type layer 109；
Above-mentioned P+ type layer 109 is set between above-mentioned rear electrode 105 and aforementioned p-type matrix 101；
The doping concentration of above-mentioned P+ type layer 109 is greater than the doping concentration of aforementioned p-type matrix 101.
Present embodiment and above-mentioned specific embodiment the difference is that, present embodiment is in above-mentioned P
P+ type layer 109 is additionally arranged between mold base 101 and above-mentioned rear electrode 105, remaining structure with above-mentioned specific embodiment phase
Together, not reinflated herein to repeat.
Further, above-mentioned rear electrode 105 is metal aluminium electrode, above-mentioned rear electrode 105 can be arranged in sintering
Above-mentioned P+ type layer 109 is directly obtained in the process.
P+ type layer 109 in present embodiment can constitute height with aforementioned p-type matrix 101 and tie, that is, local table
Face, is able to suppress the Carrier recombination of interface, and reduce contact resistance, further decreases the same of current drain in element
When, promote the photoelectric conversion efficiency of solar battery.
The present invention also provides a kind of production method of crystal silicon solar batteries, a kind of process of specific embodiment is shown
It is intended to as shown in figure 5, being called specific embodiment four, comprising:
Step S101: p-type matrix 101 is provided.
Further, aforementioned p-type matrix 101 also through over cleaning, go in the processes such as cutting damage and surface wool manufacturing one
A or multiple process processing.
Step S102: n type semiconductor layer 102 is set in the side to light of aforementioned p-type matrix 101.
Step S103: dielectric layer 104 is set in the shady face of aforementioned p-type matrix 101, above-mentioned dielectric layer 104 is band Gao Gu
Determine the dielectric layer 104 of positive charge.
Further, above-mentioned dielectric layer 104 is set as using PECVD (PlasmaEnhanced Chemical
Vapor Deposition) method overleaf deposited silicon nitride layer；
The range of the thickness of above-mentioned silicon nitride layer is 10 nanometers to 100 nanometers, including endpoint value, such as 10.0 nanometers, 55.6
Nanometer or any of 100.0 nanometers.
This step, which may also include, deposits the second silicon nitride layer in front using PECVD, serves as anti-reflection layer 112 and passivation layer
111。
Step S104: front electrode 103 is set on above-mentioned 102 surface of n type semiconductor layer, and in above-mentioned 104 table of dielectric layer
Rear electrode 105 is arranged according to predetermined pattern in face, so that above-mentioned rear electrode 105 is contacted with aforementioned p-type matrix 101, obtains
State crystal silicon solar batteries.
It should be noted that above-mentioned steps S102 and step S103 have no absolute sequencing, can exchange.
This step specifically includes the aperture on the silicon nitride layer of shady face using corrosivity slurry or laser, in opening area
Expose 101 surface of aforementioned p-type matrix；
Using thermal oxidation method or wet oxidation method, growth is used as insulating layer on 101 surface of p-type matrix of opening area
107 silica, the range of the thickness of above-mentioned insulating layer 107 is 2 nanometers to 20 nanometers, including endpoint value, such as 2.0 nanometers,
Any of 12.5 nanometers or 20.0 nanometers；
Using PECVD shady face deposit protective layer 108, above-mentioned protective layer 108 can for silicon nitride, silicon oxynitride or
Silica, the range of thickness are 50 nanometers to 200 nanometers, such as any of 50.0 nanometers, 156.2 nanometers or 200.0 nanometers；
Aperture is continued out in the opening area of shady face using corrosivity slurry or laser, exposes 101 table of aforementioned p-type matrix
The edge spacing in face, the hole on hole and above-mentioned dielectric layer 104 on above-mentioned insulating layer 107 is 10 microns to 100 microns, packet
Endpoint value is included, such as 10.0 microns, 52.3 microns or 100.0 microns；
Using silk-screen printing technique above-mentioned crystal silicon solar batteries side to light and shady face setting front electrode 103 with
Rear electrode 105.
The production method of crystal silicon solar batteries provided by the present invention, including p-type matrix 101 is provided；In aforementioned p-type base
N type semiconductor layer 102 is arranged in the side to light of body 101；Dielectric layer 104 is set in the shady face of aforementioned p-type matrix 101, is above given an account of
Matter layer 104 is the dielectric layer 104 with high fixed positive charge；On above-mentioned 102 surface of n type semiconductor layer, front electrode 103 is set, and
Rear electrode 105 is set according to predetermined pattern on above-mentioned 104 surface of dielectric layer, enables above-mentioned rear electrode 105 and aforementioned p-type base
Body 101 contacts, and obtains above-mentioned crystal silicon solar batteries.The production method of crystal silicon solar batteries provided by the invention, utilizes back
The dielectric layer 104 with high fixed positive charge of smooth surface forms N-type inversion layer 106, N-type transoid in 101 surface induction of p-type matrix
Layer 106 is formed about floating junction on the shady face surface of crystal silicon solar batteries with p-type matrix 101, it is suppressed that the table of shady face
Face is compound, increases the photoelectric conversion efficiency of crystal silicon solar batteries, meanwhile, above-mentioned dielectric layer 104 can be by simply depositing work
Skill setting, compared to the prior art in aluminium oxide, low in cost, simple process.
On the basis of above-mentioned specific embodiment, further the setting up procedure of above-mentioned rear electrode 105 is limited, is obtained
To specific embodiment five, flow diagram is as shown in Figure 6, comprising:
Step S201: p-type matrix 101 is provided.
Step S202: n type semiconductor layer 102 is set in the side to light of aforementioned p-type matrix 101.
Step S203: dielectric layer 104 is set in the shady face of aforementioned p-type matrix 101, above-mentioned dielectric layer 104 is band Gao Gu
Determine the dielectric layer 104 of positive charge.
Step S204: front electrode 103 is set on above-mentioned 102 surface of n type semiconductor layer.
Step S205: aluminium paste is printed according to predetermined pattern on above-mentioned 104 surface of dielectric layer.
Step S206: will print 101 oversintering of p-type matrix of aluminium paste, completes metallization, obtains above-mentioned rear electrode
105, and above-mentioned rear electrode 105 is enable to contact with aforementioned p-type matrix 101, obtain above-mentioned crystal silicon solar batteries.
It should be noted that the sequence of the setting of above-mentioned front electrode and above-mentioned rear electrode is interconvertible, Ke Yixian
Front electrode is arranged in setting rear electrode again.
The difference of present embodiment and the mode of above-mentioned specific implementation, present embodiment is to the above-mentioned back side
The setting method of electrode 105 limits, remaining step is identical as above-mentioned specific embodiment, not reinflated herein to repeat.
In present embodiment, material using metallic aluminium as above-mentioned rear electrode 105, aluminium paste is in sintering process
In, meeting and the p-type matrix 101 contacted adulterate, the final aluminium doped p-type semiconductor for obtaining high-dopant concentration, i.e., on
P+ type layer 109 is stated, the beneficial effect of above-mentioned P+ type layer 109 had been described above, and details are not described herein, therefore used metallic aluminium
As the raw material of above-mentioned rear electrode 105, it can be further simplified technique, improve production efficiency.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with it is other
The difference of embodiment, same or similar part may refer to each other between each embodiment.For being filled disclosed in embodiment
For setting, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is referring to method part
Explanation.
It should be noted that in the present specification, relational terms such as first and second and the like are used merely to one
A entity or operation with another entity or operate distinguish, without necessarily requiring or implying these entities or operation it
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant are intended to
Cover non-exclusive inclusion, so that the process, method, article or equipment for including a series of elements not only includes those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or setting
Standby intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in the process, method, article or equipment for including above-mentioned element.
Crystal silicon solar batteries provided by the present invention and preparation method thereof are described in detail above.It answers herein
With a specific example illustrates the principle and implementation of the invention, the explanation of above example is only intended to help to manage
Solve method and its core concept of the invention.It should be pointed out that for those skilled in the art, not departing from
, can be with several improvements and modifications are made to the present invention under the premise of the principle of the invention, these improvement and modification also fall into this hair
In bright scope of protection of the claims.
Claims (10)
1. a kind of crystal silicon solar batteries, which is characterized in that including p-type matrix；
The side to light of the p-type matrix successively includes n type semiconductor layer and front electrode outward；
It successively includes dielectric layer and rear electrode that the backlight of the p-type matrix, which faces out,；
The dielectric layer is the dielectric layer with high fixed positive charge；
The dielectric layer forms N-type inversion layer in the surface induction that the p-type matrix is contacted with the dielectric layer；
The dielectric layer has the pattern that matches with the rear electrode, make the rear electrode can directly with the p-type base
Body contact.
2. crystal silicon solar batteries as described in claim 1, which is characterized in that the crystal silicon solar batteries further include insulation
Layer；
The insulating layer is set between the rear electrode and the N-type inversion layer, for preventing the rear electrode and institute
It states and is conducted between N-type inversion layer.
3. crystal silicon solar batteries as claimed in claim 2, which is characterized in that the crystal silicon solar batteries further include protection
Layer；
The protective layer is set to the insulating layer and the dielectric layer surface, for protecting the insulating layer and the dielectric layer
It is scratched from machinery and physical chemistry corrodes.
4. crystal silicon solar batteries as described in any one of claims 1 to 3, which is characterized in that the silicon solar cell is also
Including P+ type layer；
The P+ type layer is set between the rear electrode and the p-type matrix；
The doping concentration of the P+ type layer is greater than the doping concentration of the p-type matrix.
5. crystal silicon solar batteries as described in claim 1, which is characterized in that the rear electrode is metal aluminium electrode.
6. crystal silicon solar batteries as described in claim 1, which is characterized in that the crystal silicon solar batteries further include passivation
Layer；
The passivation layer is set between the n type semiconductor layer and the front electrode.
7. crystal silicon solar batteries as claimed in claim 6, which is characterized in that the crystal silicon solar batteries further include anti-reflection
Layer；
The anti-reflection layer is set between the passivation layer and the front electrode, for increasing the light into the passivation layer
Flux.
8. crystal silicon solar batteries as claimed in claim 7, which is characterized in that the anti-reflection layer is nitridation with the passivation layer
Silicon.
9. a kind of production method of crystal silicon solar batteries characterized by comprising
P-type matrix is provided；
In the side to light of the p-type matrix, n type semiconductor layer is set；
Dielectric layer is set in the shady face of the p-type matrix, the dielectric layer is the dielectric layer with high fixed positive charge；
Front electrode is set in the N-type semiconductor layer surface, and the back side is set according to predetermined pattern in the dielectric layer surface
Electrode enables the rear electrode and the p-type substrate contact, obtains the crystal silicon solar batteries.
10. the production method of crystal silicon solar batteries as claimed in claim 9, which is characterized in that described in the dielectric layer
Surface is specifically included according to predetermined pattern setting rear electrode:
Aluminium paste is printed according to predetermined pattern in the dielectric layer surface；
The p-type matrix oversintering of aluminium paste will be printed, metallization is completed, obtains the rear electrode.
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| CN110076456A (en) * | 2019-05-29 | 2019-08-02 | 浙江晶科能源有限公司 | A kind of photovoltaic welder, photovoltaic module manufacturing equipment and solar battery |
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