CN109326548B - Method for realizing huge transfer of mLED or uLED in vertical structure - Google Patents
Method for realizing huge transfer of mLED or uLED in vertical structure Download PDFInfo
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- CN109326548B CN109326548B CN201810994703.9A CN201810994703A CN109326548B CN 109326548 B CN109326548 B CN 109326548B CN 201810994703 A CN201810994703 A CN 201810994703A CN 109326548 B CN109326548 B CN 109326548B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
Abstract
The invention relates to a method for realizing huge transfer of a vertical structure mLED or uLED. Preprocessing a magnetic material on the positive electrode surface of the LED; spraying a magnetic material on a receiving substrate, then attaching an ACF (anisotropic conductive film), and simultaneously attaching an ACF to a common cathode substrate; attaching the LED to a receiving substrate by combining the screen plate and the magnetic material control circuit, and then applying certain temperature and pressure for bonding; and (3) applying a certain temperature and pressure to the common cathode substrate, and then carrying out bonding. The method can realize the huge transfer of the mLED or uLED with the vertical structure.
Description
Technical Field
The invention relates to a method for realizing huge transfer of a vertical structure mLED or uLED.
Background
The liquid crystal display is constructed by placing liquid crystal between two parallel glass substrates, arranging TFT (thin film transistor) on the lower substrate glass, arranging color filter on the upper substrate glass, and controlling the rotation direction of liquid crystal molecules by changing the signal and voltage on the TFT, so as to control whether polarized light of each pixel point is emitted or not to achieve the purpose of display. Conventional liquid crystal displays require a backlight to provide a light source. The conventional liquid crystal display has problems of poor contrast, color saturation, lifespan, etc. due to its own structure, and also has limitations in terms of thinning of the conventional liquid crystal display because it requires a backlight to provide a light source. The invention discloses a method for realizing huge transfer of mLED & uLED Display with a vertical structure, which can realize mLED/uLED Display, wherein the Display is self-luminous, namely, after the LED structural design is thinned and arrayed, huge transfer is carried out on a circuit substrate to form LEDs with small spacing. It also enables individual addressing, individual driving of light emission (self-luminescence) for each pixel.
Disclosure of Invention
The invention aims to provide a method for realizing huge transfer of mLED or uLED in a vertical structure, which can realize huge transfer of uLED of a vertical chip.
In order to achieve the purpose, the technical scheme of the invention is as follows: a method for realizing the huge transfer of a vertical structure mLED or uLED comprises the following steps of firstly, spraying a magnetic material on the positive electrode surface of the LED; then, spraying the magnetic material on the receiving substrate; then, the screen plate and the magnetic material control circuit are combined, the LED is attached to the receiving substrate, and the LED and the receiving substrate are attached and conducted; finally, pressing the common cathode substrate and the receiving substrate; the method comprises the following concrete implementation steps:
step S1, LED preprocessing:
(1.1) spraying a magnetic material on the surface of the LED positive electrode on the LED substrate;
(1.2) cutting the LED into pcs shapes;
step S2, receiving substrate preprocessing:
(2.1) spraying a magnetic material on the receiving substrate, wherein the magnetism of the magnetic material is controlled by a magnetic material control circuit;
(2.2) removing the magnetic material of the non-RGB area;
(2.3) attaching an ACF on the receiving substrate on which the magnetic material has been sprayed;
step S3, common cathode substrate pretreatment:
(3.1) laying cathode wires in the visible area range of the common cathode substrate, and then attaching ACF (anisotropic conductive film) above the cathode wires;
step S4, LED transfer:
(4.1) adsorbing the pretreated receiving substrate on a machine table by adopting vacuum adsorption;
(4.2) arranging a screen plate corresponding to the type of the LED on the machine table according to the type of the LED to be transferred;
(4.3) placing the LED of the LED type to be transferred on the screen plate; switching on a magnetic material control circuit at a position corresponding to the LED type on the receiving substrate to enable the position corresponding to the LED type on the receiving substrate to be magnetic, and vibrating the screen plate to enable one magnetic side of the LED type to be adsorbed at the position corresponding to the LED type on the receiving substrate;
(4.4) heating the receiving substrate, and applying pressure to make the LED of the LED type and the receiving substrate be attached and conducted;
(4.5) repeating the steps (4.2) - (4.4) to transfer the LEDs of other LED types;
and (4.6) after the transfer of all the LED types is finished, pressing the common cathode substrate and the receiving substrate.
In an embodiment of the present invention, before the step (2.1), an LED loop is designed on the receiving substrate as required.
In an embodiment of the invention, in the step (1.1), the method of spraying the magnetic material on the LED positive electrode surface is printing or sputtering.
In an embodiment of the invention, in the step (2.2), the removing manner of the magnetic material in the non-RGB area is a manner including laser and waterfall photo development.
In an embodiment of the invention, in the step (3.1), a manner of laying the cathode traces within the visible area of the common cathode substrate is a printing or sputtering manner.
In an embodiment of the present invention, the outer dimension of the mesh plate in the step (4.2) is equivalent to the outer dimension of the receiving substrate.
In an embodiment of the present invention, the mesh position of the screen plate in the step (4.2) corresponds to the position of the LED type to be transferred, which is placed on the receiving substrate.
In an embodiment of the present invention, the mesh size of the mesh plate in the step (4.2) is the LED size of the LED type to be transferred.
In an embodiment of the present invention, the LED types are R, G, B three types of LEDs, and the corresponding screen is R, G, B three types of screens.
Compared with the prior art, the invention has the following beneficial effects: the method realizes the huge transfer of the mLED or uLED with the vertical structure; the mLED/uLED Display realized by the method integrates the advantages of low power consumption, high brightness, ultrahigh resolution, color saturation, high response speed, super power saving, long service life, high efficiency and the like.
Drawings
Fig. 1 is a schematic diagram of spraying a magnetic material on a positive electrode surface of an LED.
Fig. 2 is a schematic diagram of the cutting of LEDs into pcs shapes.
Fig. 3 is a schematic diagram of an LED circuit designed on a receiving substrate.
Fig. 4 is a schematic view of spraying a magnetic material on a receiving substrate.
Fig. 5 is a schematic diagram of removing the magnetic material in the non-RGB region on the receiving substrate.
Fig. 6 is a schematic view of attaching an ACF to a receiving substrate on which a magnetic material has been sprayed.
FIG. 7 is a schematic view of a screen positioned over a receiving substrate on a stage.
Fig. 8 is a schematic diagram of the adsorption of the R LED to the corresponding position of the receiving substrate.
Fig. 9 is a schematic view of the R LED and the receiving substrate being further attached by pressure at corresponding positions.
FIG. 10 is a schematic view of pressing the common cathode substrate and the receiving substrate.
Detailed Description
The technical scheme of the invention is specifically explained below with reference to the accompanying drawings.
The invention provides a method for realizing huge transfer of a vertical structure mLED or uLED, which comprises the following steps of firstly, spraying a magnetic material on a positive electrode surface of an LED; then, spraying the magnetic material on the receiving substrate; then, the screen plate and the magnetic material control circuit are combined, the LED is attached to the receiving substrate, and the LED and the receiving substrate are attached and conducted; finally, pressing the common cathode substrate and the receiving substrate; the method comprises the following concrete implementation steps:
step S1, LED preprocessing:
(1.1) spraying a magnetic material on the surface of the LED positive electrode on the LED substrate;
(1.2) cutting the LED into pcs shapes;
step S2, receiving substrate preprocessing:
(2.1) spraying a magnetic material on the receiving substrate, wherein the magnetism of the magnetic material is controlled by a magnetic material control circuit;
(2.2) removing the magnetic material of the non-RGB area;
(2.3) attaching an ACF on the receiving substrate on which the magnetic material has been sprayed;
step S3, common cathode substrate pretreatment:
(3.1) laying cathode wires in the visible area range of the common cathode substrate, and then attaching ACF (anisotropic conductive film) above the cathode wires;
step S4, LED transfer:
(4.1) adsorbing the pretreated receiving substrate on a machine table by adopting vacuum adsorption;
(4.2) arranging a screen plate corresponding to the type of the LED on the machine table according to the type of the LED to be transferred;
(4.3) placing the LED of the LED type to be transferred on the screen plate; switching on a magnetic material control circuit at a position corresponding to the LED type on the receiving substrate to enable the position corresponding to the LED type on the receiving substrate to be magnetic, and vibrating the screen plate to enable one magnetic side of the LED type to be adsorbed at the position corresponding to the LED type on the receiving substrate;
(4.4) heating the receiving substrate, and applying pressure to make the LED of the LED type and the receiving substrate be attached and conducted;
(4.5) repeating the steps (4.2) - (4.4) to transfer the LEDs of other LED types;
and (4.6) after the transfer of all the LED types is finished, pressing the common cathode substrate and the receiving substrate.
Before the step (2.1), designing an LED loop on the receiving substrate according to needs.
In the step (1.1), the method for spraying the magnetic material on the surface of the positive electrode of the LED is a printing or sputtering method.
In the step (2.2), the method for removing the magnetic material in the non-RGB region includes laser, waterfall photo development, and the like.
In the step (3.1), the cathode wiring is laid within the visible area of the common cathode substrate by printing or sputtering.
And (4) the shape size of the screen plate in the step (4.2) is equivalent to the shape size of the receiving substrate, the mesh position of the screen plate corresponds to the position of the LED of the type of the LED to be transferred, which is placed on the receiving substrate, and the mesh size of the screen plate is the size of the LED of the type of the LED to be transferred.
The LED type is R, G, B and the like, and the corresponding screen plate is R, G, B and the like.
The following is a specific implementation of the present invention.
A method for realizing huge transfer of mLED or uLED in vertical structure is realized as follows:
(1) mLED/uLED pretreatment, see FIGS. 1, 2:
1) spraying a magnetic material 12 on the positive electrode surface of the LED11 on the LED substrate 10 in a printing and sputtering way;
2) cutting the LED into pcs shapes;
(2) receive substrate pre-treatment, see fig. 3-6;
1) the receiving substrate 22 is designed with the RGB circuit 21 (R, G, B circuits from left to right in fig. 3, and the cycle is repeated as required);
2) spraying a magnetic material on the receiving substrate, wherein the magnetism of the magnetic material is controlled by a magnetic material control circuit 23;
3) removing the magnetic material 24 in the non-RGB area by adopting modes such as laser or waterfall photodevelopment and the like;
4) attaching ACF25 to the receiving substrate sprayed with the magnetic material;
(3) common cathode substrate pretreatment
Arranging cathode wires in the visible area of the substrate by adopting a printing or sputtering mode, and then attaching ACF (anisotropic conductive film) above the wires;
(4) bulk transfer, see FIGS. 7-10;
1) adsorbing the pretreated receiving substrate on a machine table by adopting vacuum adsorption
2) Arranging a screen plate 26 on the machine table, wherein the screen plate has the following setting requirements:
a. the screen plate is fixed above the receiving substrate, and the screen plate can carry out vibration operation when working;
b. the external dimension of the screen plate is the same as that of the receiving substrate;
c. the position of the mesh on the screen 27 corresponds to the corresponding R, G, B on the receiving substrate, in this example, the R LED is used for explanation, so the mesh on the screen in the figure only corresponds to the R on the receiving substrate;
d. the mesh size on the screen plate is the LED size;
e. three types of screens are provided as three color LEDs (R, G, B) are involved, R types being: the mesh position and size correspond to R on the receiving substrate; the G type is: the mesh position and size correspond to G on the receiving substrate; the type B is as follows: the mesh position and size correspond to B on the receiving substrate; the screen type is not limited to R, G, B, and can be set according to the actual LED type;
3) placing R LEDs on the screen, this example is illustrated with R LEDs
4) The circuit of the magnetic material at the corresponding position R on the receiving substrate is switched on to make the receiving substrate have magnetism, and the screen plate is vibrated to make the magnetic side of the LED adsorbed on the receiving substrate
5) Heating the substrate, and applying a certain pressure F to make the LED and the receiving substrate be attached and conducted;
6) placing corresponding G LED and B LED net plates, and operating the same R LED;
7) and pressing the common cathode substrate and the receiving substrate after R, G and B LEDs are both bonded on the receiving substrate.
The above are preferred embodiments of the present invention, and all changes made according to the technical scheme of the present invention that produce functional effects do not exceed the scope of the technical scheme of the present invention belong to the protection scope of the present invention.
Claims (9)
1. A method for realizing huge transfer of a vertical structure uLED is characterized in that firstly, a magnetic material is sprayed on a positive electrode surface of the LED; then, spraying the magnetic material on the receiving substrate; then, the screen plate and the magnetic material control circuit are combined, the LED is attached to the receiving substrate, and the LED and the receiving substrate are attached and conducted; finally, pressing the common cathode substrate and the receiving substrate; the method comprises the following concrete implementation steps:
step S1, LED preprocessing:
(1.1) spraying a magnetic material on the surface of the LED positive electrode on the LED substrate;
(1.2) cutting the LED into pcs shapes;
step S2, receiving substrate preprocessing:
(2.1) spraying a magnetic material on the receiving substrate, wherein the magnetism of the magnetic material is controlled by a magnetic material control circuit;
(2.2) removing the magnetic material of the non-RGB area;
(2.3) attaching an ACF on the receiving substrate on which the magnetic material has been sprayed;
step S3, common cathode substrate pretreatment:
(3.1) laying cathode wires in the visible area range of the common cathode substrate, and then attaching ACF (anisotropic conductive film) above the cathode wires;
step S4, LED transfer:
(4.1) adsorbing the pretreated receiving substrate on a machine table by adopting vacuum adsorption;
(4.2) arranging a screen plate corresponding to the type of the LED on the machine table according to the type of the LED to be transferred;
(4.3) placing the LED of the LED type to be transferred on the screen plate; switching on a magnetic material control circuit at a position corresponding to the LED type on the receiving substrate to enable the position corresponding to the LED type on the receiving substrate to be magnetic, and vibrating the screen plate to enable one magnetic side of the LED type to be adsorbed at the position corresponding to the LED type on the receiving substrate;
(4.4) heating the receiving substrate, and applying pressure to make the LED of the LED type and the receiving substrate be attached and conducted;
(4.5) repeating the steps (4.2) - (4.4) to transfer the LEDs of other LED types;
and (4.6) after the transfer of all the LED types is finished, pressing the common cathode substrate and the receiving substrate.
2. The method for realizing huge transfer of vertical structure uLED according to claim 1, wherein said step (2.1) is preceded by designing LED loops on the receiving substrate as required.
3. The method for realizing huge transfer of vertical structure uLED according to claim 1, wherein in the step (1.1), the way of spraying the magnetic material on the LED positive electrode surface is printing or sputtering.
4. The method according to claim 1, wherein the step (2.2) is to remove the magnetic material in the non-RGB areas by laser or exposure development.
5. The method according to claim 1, wherein in the step (3.1), the cathode traces are disposed within the visible area of the common cathode substrate by printing or sputtering.
6. The method for realizing huge transfer of vertical structure uLED according to claim 1, wherein the net board in step (4.2) has the external dimension equivalent to that of the receiving substrate.
7. The method for realizing huge transfer of vertical structure uLED according to claim 1, wherein the mesh position of the mesh plate in step (4.2) corresponds to the position of the LED of the type of LED to be transferred placed on the receiving substrate.
8. The method for realizing huge transfer of vertical structure uLED according to claim 1, wherein the mesh size of the mesh plate in step (4.2) is the size of the LED of the type of LED to be transferred.
9. The method of claim 1, wherein the LED types are R, G, B three types of LEDs, and the corresponding screen is R, G, B three types of screens.
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| CN110289279B (en) * | 2019-06-04 | 2021-09-24 | 上海天马微电子有限公司 | Transfer method, array substrate, manufacturing method of array substrate and display device |
| CN110335844B (en) * | 2019-06-17 | 2021-08-03 | 华中科技大学 | MicroLED bulk transfer device and method based on selective heating demagnetization |
| CN110265341B (en) * | 2019-07-05 | 2021-04-02 | 深超光电（深圳）有限公司 | Light emitting element transfer method, display panel, preparation method of display panel and substrate |
| CN110364607B (en) * | 2019-07-18 | 2020-08-07 | 京东方科技集团股份有限公司 | Light emitting diode, display substrate, transfer device and method thereof |
| CN110690245B (en) * | 2019-10-16 | 2022-03-25 | 福州大学 | Light-emitting display device based on special-shaped nanometer LED crystal grains |
| CN112635400B (en) * | 2021-01-07 | 2022-10-04 | Tcl华星光电技术有限公司 | Magnetic type micro LED bulk transfer structure and method |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011072373A1 (en) * | 2009-12-17 | 2011-06-23 | Cooledge Lighting Inc. | Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques |
| US8518204B2 (en) * | 2011-11-18 | 2013-08-27 | LuxVue Technology Corporation | Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer |
| CN105449054A (en) * | 2015-11-11 | 2016-03-30 | 海迪科（南通）光电科技有限公司 | Accurate positioning method for LED chips |
| CN107026124A (en) * | 2014-11-27 | 2017-08-08 | 广州硅芯电子科技有限公司 | Manufacture the method and miniature light-emitting diode display of miniature light-emitting diode display |
| CN107425101A (en) * | 2017-07-11 | 2017-12-01 | 华灿光电（浙江）有限公司 | A kind of method of micro-led chip flood tide transfer |
| CN107910413A (en) * | 2017-11-21 | 2018-04-13 | 福州大学 | The flood tide transfer device and transfer method of a kind of MicroLED |
| CN107910414A (en) * | 2017-11-21 | 2018-04-13 | 歌尔股份有限公司 | Light-emitting diode display preparation method and light-emitting diode display |
| CN108461438A (en) * | 2018-04-03 | 2018-08-28 | 泉州市盛维电子科技有限公司 | A kind of micro-led flood tide transfer device and transfer method |
| CN109065677A (en) * | 2018-08-17 | 2018-12-21 | 京东方科技集团股份有限公司 | Micro-LED flood tide transfer method and Micro-LED substrate |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11061276B2 (en) * | 2015-06-18 | 2021-07-13 | X Display Company Technology Limited | Laser array display |
| TWI605536B (en) * | 2017-04-12 | 2017-11-11 | 財團法人工業技術研究院 | Magnetic transfer module and method for transferring electronic element |
-
2018
- 2018-08-29 CN CN201810994703.9A patent/CN109326548B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011072373A1 (en) * | 2009-12-17 | 2011-06-23 | Cooledge Lighting Inc. | Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques |
| US8518204B2 (en) * | 2011-11-18 | 2013-08-27 | LuxVue Technology Corporation | Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer |
| CN107026124A (en) * | 2014-11-27 | 2017-08-08 | 广州硅芯电子科技有限公司 | Manufacture the method and miniature light-emitting diode display of miniature light-emitting diode display |
| CN105449054A (en) * | 2015-11-11 | 2016-03-30 | 海迪科（南通）光电科技有限公司 | Accurate positioning method for LED chips |
| CN107425101A (en) * | 2017-07-11 | 2017-12-01 | 华灿光电（浙江）有限公司 | A kind of method of micro-led chip flood tide transfer |
| CN107910413A (en) * | 2017-11-21 | 2018-04-13 | 福州大学 | The flood tide transfer device and transfer method of a kind of MicroLED |
| CN107910414A (en) * | 2017-11-21 | 2018-04-13 | 歌尔股份有限公司 | Light-emitting diode display preparation method and light-emitting diode display |
| CN108461438A (en) * | 2018-04-03 | 2018-08-28 | 泉州市盛维电子科技有限公司 | A kind of micro-led flood tide transfer device and transfer method |
| CN109065677A (en) * | 2018-08-17 | 2018-12-21 | 京东方科技集团股份有限公司 | Micro-LED flood tide transfer method and Micro-LED substrate |
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