CN107425101A - A kind of method of micro-led chip flood tide transfer - Google Patents

A kind of method of micro-led chip flood tide transfer Download PDF

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Publication number
CN107425101A
CN107425101A CN201710561814.6A CN201710561814A CN107425101A CN 107425101 A CN107425101 A CN 107425101A CN 201710561814 A CN201710561814 A CN 201710561814A CN 107425101 A CN107425101 A CN 107425101A
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type electrode
type
micro led
led chips
fixed block
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CN107425101B (en
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尹灵峰
王江波
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HC Semitek Zhejiang Co Ltd
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HC Semitek Zhejiang Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81053—Bonding environment
    • H01L2224/81085—Bonding environment being a liquid, e.g. for fluidic self-assembly
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112—Aligning
    • H01L2224/81143—Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
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    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/08—Magnetic details
    • H05K2201/083—Magnetic materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10636—Leadless chip, e.g. chip capacitor or resistor

Abstract

The invention discloses a kind of method of micro-led chip flood tide transfer, belong to technical field of semiconductors.Including：Some first Micro LED chips are made, the P-type electrode of the first Micro LED chips and N-type electrode the same side are synonyms pole；Installed on drive circuit board and P-type electrode fixed block and N-type electrode fixed block are set on the position of the first Micro LED chips, the opposite side of P-type electrode fixed block and P-type electrode is synonyms pole, and the opposite side of N-type electrode fixed block and N-type electrode is synonyms pole；Drive circuit board and some first Micro LED chips are put into same solution, the first Micro LED chips are fixedly mounted on drive circuit board in the presence of magnetic force.The present invention can realize the flood tide transfer of Micro LED chips, the problem of just changing all chips in the absence of a chip existing defects, improve production efficiency, reduce production cost.

Description

A kind of method of micro-led chip flood tide transfer
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of side of micro-led chip flood tide transfer Method.
Background technology
Light emitting diode (English：Light Emitting Diode, referred to as：LED it is) that one kind can change into electric energy The semiconductor diode of luminous energy, there is the characteristics of small volume, brightness are high and energy consumption is small, be widely used in display screen, backlight Source and lighting field.Chip is LED core component, micro-led (English abbreviation：Micro LED) chip is size Reach micron-sized LED chip.
Micro LED chips can carry out flood tide transfer generally after completing, specially will be a large amount of (usually several Ten thousand to hundreds of thousands) Micro LED chips are transferred on drive circuit board and form LED array.At present flood tide transfer method be Formed on substrate after some chips, first by all adhesive die attachments on same blue film, remove substrate；Blue film is carried out again Diffusion, to increase the distance between adjacent chips on blue film；All chips on blue film are finally separately fixed at drive circuit board On, remove blue film.
During the present invention is realized, inventor has found that prior art at least has problems with：
As long as there is a chip existing defects in some chips formed in wafer, then chip all in wafer all can be by Change, cause very big waste, and yield rate is very low, greatly reduces the production efficiency of Micro LED chips so that The production cost of Micro LED chips is very high.
The content of the invention
In order to solve problem of the prior art, the embodiments of the invention provide a kind of transfer of Micro LED chips flood tide Method.The technical scheme is as follows：
The embodiments of the invention provide a kind of method of Micro LED chips flood tide transfer, methods described includes：
Some first Micro LED chips are made, the first Micro LED chips include N-type layer, luminescent layer, p-type Layer, P-type electrode and N-type electrode, the N-type layer, the luminescent layer and the P-type layer stack gradually, and the P-type layer, which is provided with, prolongs The groove of the N-type layer is extended, the N-type electrode is arranged in the N-type layer in the groove, and the P-type electrode is arranged on institute State in P-type layer, the P-type electrode and the N-type electrode are magnet, one end away from the P-type layer of the P-type electrode and described The one end of N-type electrode away from the N-type layer is synonyms pole；
Installed on drive circuit board and P-type electrode fixed block and N-type are set on the position of the first Micro LED chips Electrode fixed block, the P-type electrode fixed block and the N-type electrode fixed block are magnet, and the P-type electrode fixed block is away from institute The one end of one end and the P-type electrode away from the P-type layer for stating drive circuit board is synonyms pole, and the N-type electrode is fixed The one end of one end and the N-type electrode away from the N-type layer of block away from the drive circuit board is synonyms pole；
The drive circuit board and some first Micro LED chips are put into same solution, the P-type electrode Absorption is on the P-type electrode fixed block in the presence of magnetic force, while the N-type electrode is adsorbed in institute in the presence of magnetic force State on N-type electrode fixed block, realize that the first Micro LED chips are fixedly mounted on the drive circuit board.
Alternatively, some first Micro LED chips of making, including：
Grow N-type layer, luminescent layer, P-type layer successively on substrate；
The photoresist of the first figure is formed in the P-type layer using photoetching technique；
The P-type layer and the luminescent layer are etched under the protection of the photoresist of first figure, in the P-type layer Form the groove for extending to the N-type layer；
Remove the photoresist of first figure；
The photoresist of second graph is formed in the N-type layer in the P-type layer and the groove using photoetching technique；
Magnetic is laid in the P-type layer exposed in the photoresist of the second graph and the photoresist of the second graph Property material；
Remove the photoresist of the second graph, the magnetic material in the P-type layer forms P-type electrode；
The P-type electrode is put into the magnetic field of first direction, it is described until the P-type electrode externally shows magnetic First direction is parallel with the stacked direction of the first Micro LED chips；
3rd figure is formed using photoetching technique in the N-type layer in the P-type layer, the P-type electrode and the groove Photoresist；
Magnetic is laid in the N-type layer exposed in the photoresist of the 3rd figure and the photoresist of the 3rd figure Property material；
Remove the photoresist of the 3rd figure, the magnetic material in the N-type layer forms N-type electrode；
The N-type electrode is put into the magnetic field of second direction, it is described until the N-type electrode externally shows magnetic Second direction is opposite to the first direction.
Alternatively, P-type electrode is set on the position that the first Micro LED chips are installed on drive circuit board Fixed block and N-type electrode fixed block, including：
The photoresist of the 4th figure is formed on the drive circuit board using photoetching technique；
The drive circuit board upper berth exposed in the photoresist of the 4th figure and the photoresist of the 4th figure If magnetic material；
Remove the photoresist of the 4th figure, the magnetic material on the drive circuit board forms P-type electrode fixed block；
The p-type fixed block is put into the magnetic field of third direction, until the p-type fixed block externally shows magnetic, The third direction is vertical with the surface for the photoresist that the drive circuit board forms the 4th figure；
The photoetching of the 5th figure is formed on the drive circuit board and the P-type electrode fixed block using photoetching technique Glue；
The drive circuit board upper berth exposed in the photoresist of the 5th figure and the photoresist of the 5th figure If magnetic material；
Remove the photoresist of the 5th figure, the magnetic material on the drive circuit board forms N-type electrode fixed block；
The N-type fixed block is put into the magnetic field of fourth direction, until the N-type fixed block externally shows magnetic, The fourth direction is opposite with the third direction.
Preferably, the magnetic material be Al-Ni-Co series permanent-magnet alloy, it is siderochrome cobalt system permanent-magnet alloy, permanent-magnet ferrite, dilute Native permanent-magnet material or composite permanent-magnetic material.
It is alternatively, described to be put into the drive circuit board in same solution with some first Micro LED chips, Including：
The drive circuit board is put into solution, the drive circuit board sets P-type electrode fixed block and N-type electrode to consolidate The side of block is determined back to ground；
Some first Micro LED chips are put into the solution, some first Micro LED chips exist It is fixedly mounted under the collective effect of gravity and magnetic force on the diverse location of the drive circuit board.
Alternatively, the solution is acetone soln.
Alternatively, methods described also includes：
Make some 2nd Micro LED chips, structure and the first Micro of the 2nd Micro LED chips The structure of LED chip is identical, the color that the 2nd Micro LED chips emit beam and the first Micro LED chips The color to emit beam is different；
Installed on the drive circuit board sets the P-type electrode to consolidate on the position of the 2nd Micro LED chips Determine block and the N-type electrode fixed block；
The drive circuit board and some 2nd Micro LED chips are put into same solution, described second Micro LED chips are fixedly mounted in the presence of magnetic force on the drive circuit board.
Alternatively, methods described also includes：
After some first Micro LED chips of making, the first Micro LED chips are detected；
Choose except the underproof first Micro LED chips of detection.
Alternatively, the one end of the P-type electrode away from the P-type layer is N poles, and the N-type electrode is away from the N-type layer One end is S poles.
Alternatively, ultimate range of the first Micro LED chips between 2 points on the section of stacked direction For 3 μm~50 μm.
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：
By the Micro LED chips for making P-type electrode and N-type electrode is magnet, P-type electrode and N-type electrode the same side For synonyms pole, and P-type electrode fixed block and N-type electrode is set to consolidate on the position of Micro LED chips on drive circuit board Determine block, the opposite side of P-type electrode fixed block and P-type electrode is synonyms pole, and N-type electrode block and N-type electrode opposite side are different name Magnetic pole, finally drive circuit board and Micro LED chips are put into same solution, Micro LED chips are under magneticaction Meeting automatic absorbing is in the specified location of drive circuit board, it is possible to achieve the flood tide transfer of Micro LED chips, it is simple and convenient fast Speed, and the problem of just change all chips in the absence of a chip existing defects, greatly improve the life of Micro LED chips Efficiency is produced, reduces the production cost of Micro LED chips.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, make required in being described below to embodiment Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for For those of ordinary skill in the art, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings Accompanying drawing.
Fig. 1 is a kind of flow chart of the method for Micro LED chips flood tide transfer provided in an embodiment of the present invention；
Fig. 2 a- Fig. 2 d are the schematic diagrames of method implementation procedure chips provided in an embodiment of the present invention and drive circuit board.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention Formula is described in further detail.
Embodiment
The embodiments of the invention provide a kind of method of Micro LED chips flood tide transfer, referring to Fig. 1, this method includes：
Step 101：Make some first Micro LED chips.
In the present embodiment, the first Micro LED chips include N-type layer, luminescent layer, P-type layer, P-type electrode and N-type electricity Pole, N-type layer, luminescent layer and P-type layer stack gradually, and P-type layer is provided with the groove for extending to N-type layer, and N-type electrode is arranged on groove In interior N-type layer, P-type electrode is arranged in P-type layer, and P-type electrode and N-type electrode are magnet, P-type electrode away from P-type layer one End and the one end of N-type electrode away from N-type layer are synonyms pole.
Specifically, ultimate range of the first Micro LED chips between 2 points on the section of stacked direction can be with For 3 μm~50 μm.
Alternatively, the one end of P-type electrode away from P-type layer can be N poles, and the one end of N-type electrode away from N-type layer can be S Pole.Or the one end of P-type electrode away from P-type layer is S poles, the one end of N-type electrode away from N-type layer is N poles.
Fig. 2 a are the structural representation of the chip after step 101 execution.Wherein, 11 be N-type layer, and 12 be luminescent layer, 13 It is P-type electrode for P-type layer, 14,15 be N-type electrode, and the one end of P-type electrode away from P-type layer is N poles, and N-type electrode is away from N-type layer One end be S poles.
Specifically, the step 101 can include：
The first step, grow N-type layer, luminescent layer, P-type layer successively on substrate.
Second step, the photoresist of the first figure is formed in P-type layer using photoetching technique.
3rd step, removes the P-type layer and luminescent layer of part under the protection of the photoresist of the first figure, and formation extends to N The groove of type layer.
4th step, remove the photoresist of the first figure.
5th step, the photoresist of second graph is formed in the N-type layer in P-type layer and groove using photoetching technique.
6th step, magnetic is laid in the P-type layer exposed in the photoresist of second graph and the photoresist of second graph Material.
7th step, removes the photoresist of second graph, and the magnetic material in P-type layer forms P-type electrode.
8th step, P-type electrode is put into the magnetic field of first direction, until P-type electrode externally shows magnetic, first party To parallel with the stacked direction of the first Micro LED chips.
9th step, the photoetching of the 3rd figure is formed in the N-type layer in P-type layer, P-type electrode and groove using photoetching technique Glue.
Tenth step, magnetic is laid in the N-type layer exposed in the photoresist of the 3rd figure and the photoresist of the 3rd figure Material.
11st step, the photoresist of the 3rd figure is removed, the magnetic material in N-type layer forms N-type electrode.
12nd step, N-type electrode is put into the magnetic field of second direction, until N-type electrode externally shows magnetic, second Direction is opposite with first direction.
Alternatively, magnetic material can be Al-Ni-Co series permanent-magnet alloy, it is siderochrome cobalt system permanent-magnet alloy, permanent-magnet ferrite, dilute Native permanent-magnet material or composite permanent-magnetic material.
Specifically, substrate can be Sapphire Substrate, or silicon substrate.N-type layer can be n type gallium nitride layer, p-type Layer can be p-type gallium nitride layer.Luminescent layer can include multiple indium gallium nitrogen layers and multiple gallium nitride layers, multiple indium gallium nitrogen layers and more The individual alternately laminated setting of gallium nitride layer.
Alternatively, the first Micro LED chips can also include cushion, and cushion and luminescent layer are located at the two of N-type layer Side.
Specifically, cushion can be gallium nitride layer, or aln layer.
Correspondingly, in Grown N-type layer, first in Grown cushion, then N-type is grown on the buffer layer Layer, to alleviate the lattice mismatch between N-type layer and substrate, improves overall crystal mass, avoids causing luminous efficiency bad Influence.
Alternatively, the first Micro LED chips can also include transparency conducting layer, and transparency conducting layer and luminescent layer are located at P The both sides of type layer.
Specifically, transparency conducting layer can be tin indium oxide (English：Indium tin oxide, referred to as：ITO) layer, It can be zinc oxide film.
Correspondingly, after Grown P-type layer, transparency conducting layer is grown in P-type layer., can be with when forming groove The photoresist of first figure is formed over transparent conductive layer, and electrically conducting transparent is etched under the protection of the photoresist in the first figure Layer, P-type layer and luminescent layer；Original constant (the photoetching for using photoetching technique to form the first figure in P-type layer can also be retained Glue, and P-type layer and luminescent layer are etched under the protection of the photoresist in the first figure), form first over transparent conductive layer in addition The photoresist of figure, and etch transparency conducting layer under the protection of the photoresist in the first figure.
More specifically, the thickness of substrate can be 400 microns, the thickness of cushion can be 200 nanometers, N-type layer, light The thickness sum of layer and P-type layer can be 5 microns, and the number of plies sum of indium gallium nitrogen layer and gallium nitride layer can be 16 in luminescent layer Layer, the thickness of transparency conducting layer can be 500 nanometers.
In actual applications, in the first step, it is organic that Sapphire Substrate can be put into Veeco K465i or C4 metals Compound chemical gaseous phase deposition (English：Metal Organic Chemical Vapor Deposition, referred to as：MOCVD) set Standby middle grown buffer layer, N-type layer, luminescent layer and P-type layer.High-purity hydrogen (H can specifically be used2) or high pure nitrogen (N2) or it is high Pure H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As nitrogen source, trimethyl gallium (TMGa) and triethyl-gallium (TEGa) As gallium source, trimethyl indium (TMIn) is used as indium source, and trimethyl aluminium (TMAl) is used as silicon source, and silane (SiH4) is used as n-type doping Agent, two luxuriant magnesium (CP2Mg) it is used as P-type dopant.Chamber pressure is controlled in 100~600torr.
In second step, the photoresist of the first figure is covered in the area on p type semiconductor layer in addition to groove position Domain.In the 5th step, the photoresist of second graph is covered in the region in P-type layer in addition to P-type electrode position.The 9th In step, the photoresist of the 3rd figure is covered in the N-type layer removed in P-type electrode and P-type layer in groove except where N-type electrode Region outside position.
In the third step, dry etching technology can be used to form groove, can also be formed using wet etch techniques recessed Groove.
In the 4th step, the 7th step and the 11st step, it can use and remove glue stripping photoresist.
In the 6th step and the tenth step, physical vapor technology laying magnetic material can be used.
It should be noted that being divided into many small regions inside magnetic material, each small region is referred to as one Magnetic domain, each magnetic domain have the magnetic moment (i.e. a small magnetic field) of oneself.Generally, the magnetic moment direction of each magnetic domain Different, magnetic field is cancelled out each other, and whole magnetic material does not show magnetic externally.It is put into when magnetic material in magnetic field, by outer The effect in magnetic field, the magnetic moment direction of each magnetic domain reach unanimity, and whole magnetic material externally shows magnetic.Now remove outer magnetic , the magnetic moment direction of each magnetic domain can continue to keep, and whole magnetic material becomes magnet.8th step and the 12nd step Exactly magnetic material is magnetized, it is become magnet.
Alternatively, after step 101, this method can also include：
First Micro LED chips are detected；
Choose except the underproof first Micro LED chips of detection.
In the specific implementation, photoelectric parameter testing instrument, automated optical detection equipment (English can be used：Automatic Optic Inspection, abbreviation AOI) etc. equipment all chips are detected, and record the position for detecting unqualified chip Put, therefrom chosen except the underproof chip of detection further according to the position of record.
Step 102：Installed on drive circuit board and P-type electrode fixed block is set on the position of the first Micro LED chips With N-type electrode fixed block.
In the present embodiment, P-type electrode fixed block and N-type electrode fixed block are magnet, and P-type electrode fixed block is away from driving The one end of one end and P-type electrode away from P-type layer of circuit board is synonyms pole, and N-type electrode fixed block is away from drive circuit board The one end of one end and N-type electrode away from N-type layer is synonyms pole.
Fig. 2 b are the structural representation of the drive circuit board after step 102 execution.Wherein, 20 be drive circuit board, 21 It is N poles fixed block for P poles fixed block, 22, the one end of P-type electrode fixed block away from drive circuit board is S poles, and N-type electrode is fixed The one end of block away from drive circuit board is N poles.
Specifically, the step 102 can include：
The first step, the photoresist of the 4th figure is formed on drive circuit board using photoetching technique.
Second step, the drive circuit board upper berth exposed in the photoresist of the 4th figure and the photoresist of the 4th figure If magnetic material.
3rd step, the photoresist of the 4th figure is removed, the magnetic material on drive circuit board forms P-type electrode fixed block.
4th step, p-type fixed block is put into the magnetic field of third direction, until p-type fixed block externally shows magnetic, Three directions are vertical with the surface for the photoresist that drive circuit board forms the 4th figure.
5th step, the photoresist of the 5th figure is formed on drive circuit board and P-type electrode fixed block using photoetching technique.
6th step, the drive circuit board upper berth exposed in the photoresist of the 5th figure and the photoresist of the 5th figure If magnetic material.
7th step, the photoresist of the 5th figure is removed, the magnetic material on drive circuit board forms N-type electrode fixed block.
8th step, N-type fixed block is put into the magnetic field of fourth direction, until N-type fixed block externally shows magnetic, Four directions are opposite with third direction.
In actual applications, in the first step, the photoresist of the 4th figure is covered on drive circuit board except P-type electrode is consolidated Determine the region outside block.In the 5th step, the photoresist of the 5th figure is covered in P-type electrode fixed block, removes N on drive circuit board Region outside type electrode fixed block position.
In second step and the 6th step, physical vapor technology laying magnetic material can be used.
In the 3rd step and the 7th step, it can use and remove glue stripping photoresist.
Alternatively, magnetic material can be Al-Ni-Co series permanent-magnet alloy, it is siderochrome cobalt system permanent-magnet alloy, permanent-magnet ferrite, dilute Native permanent-magnet material or composite permanent-magnetic material.By using permanent-magnet material so that the magnetic of magnet is constant, it is ensured that Micro LED Chip can be permanently affixed on drive circuit board.
In the specific implementation, integrated circuit (English can be used on drive circuit board：Integrated Circuit, letter Claim：IC) technology laying drive circuit, P-type electrode is accessed by P-type electrode fixed block the positive pole of power supply, and N-type electrode passes through N-type electrode fixed block accesses the negative pole of power supply.
Step 103：Drive circuit board and some first Micro LED chips are put into same solution, P-type electrode is in magnetic Absorption is on P-type electrode fixed block in the presence of power, while N-type electrode is adsorbed in N-type electrode fixed block in the presence of magnetic force On, realize that the first Micro LED chips are fixedly mounted on drive circuit board.
Fig. 2 c and Fig. 2 d are the structural representation of chip and drive circuit board after step 103 execution.Wherein, 10 be One Micro LED chips.
Alternatively, the step 103 can include：
Drive circuit board is put into solution, drive circuit board sets the side of P-type electrode fixed block and N-type electrode fixed block Face is back to ground；
Some first Micro LED chips are put into solution, some first Micro LED chips are in gravity and magnetic force It is fixedly mounted under collective effect on the diverse location of drive circuit board.
By first that drive circuit board is horizontal positioned in the solution, P-type electrode fixed block and N-type electrode fixed block upward, Chip is put into solution again, chip can fall on drive circuit board under gravity, while in the presence of magnetic force, P Type electrode meeting automatic absorbing is on P-type electrode fixed block, and N-type electrode meeting automatic absorbing is on N-type electrode fixed block so that chip Automatically it is fixed on the position of setting.
In the specific implementation, solution can be contained in beaker container.
Alternatively, solution can be acetone soln.Acetone soln can volatilize, it is easy to remove clean, the simple side of processing Just.
Alternatively, this method can also include：
The first step, make some 2nd Micro LED chips, structure and the first Micro of the 2nd Micro LED chips The structure of LED chip is identical, and the color that the 2nd Micro LED chips emit beam emits beam with the first Micro LED chips Color it is different.
Second step, on drive circuit board install the 2nd Micro LED chips position on set P-type electrode fixed block and N-type electrode fixed block.
3rd step, drive circuit board and some 2nd Micro LED chips are put into same solution, the 2nd Micro LED chip is fixedly mounted on drive circuit board in the presence of magnetic force.
In actual applications, the Micro LED chips of three kinds of colors can be arranged on drive circuit board, can be first in driving electricity Installed on the plate of road and P-type electrode fixed block and N-type electrode fixed block are set on a kind of position of the Micro LED chips of color, entered And the Micro LED chips of this color are fixedly mounted on drive circuit board；According still further to same method by drive circuit Installed on plate and P-type electrode fixed block and N-type electrode fixed block are set on the position of the Micro LED chips of another color, and The Micro LED chips of this color are fixedly mounted on drive circuit board；Finally after the same method by drive circuit Installed on plate and P-type electrode fixed block and N-type electrode fixed block be set on a kind of position for the Micro LED chips for being left color, And the Micro LED chips of this color are fixedly mounted on drive circuit board, so as to realize three color Micro LED chip battle arrays The making of row.
The embodiment of the present invention is by making the Micro LED chips of P-type electrode and N-type electrode for magnet, P-type electrode and N Type electrode the same side is synonyms pole, and sets P-type electrode fixed block on the position of Micro LED chips on drive circuit board With N-type electrode fixed block, the opposite side of P-type electrode fixed block and P-type electrode is synonyms pole, N-type electrode block and N-type electrode phase Offside is synonyms pole, and finally drive circuit board and Micro LED chips are put into same solution, and Micro LED chips exist Meeting automatic absorbing is in the specified location of drive circuit board under magneticaction, it is possible to achieve the flood tide transfer of Micro LED chips, It is simple and convenient rapid, and the problem of just change all chips in the absence of a chip existing defects, greatly improve Micro The production efficiency of LED chip, reduce the production cost of Micro LED chips.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and Within principle, any modification, equivalent substitution and improvements made etc., it should be included in the scope of the protection.

Claims (10)

  1. A kind of 1. method of micro-led Micro LED chips flood tide transfer, it is characterised in that methods described includes：
    Some first Micro LED chips are made, the first Micro LED chips include N-type layer, luminescent layer, P-type layer, p-type Electrode and N-type electrode, the N-type layer, the luminescent layer and the P-type layer stack gradually, and the P-type layer is provided with and extends to institute The groove of N-type layer is stated, the N-type electrode is arranged in the N-type layer in the groove, and the P-type electrode is arranged on the P-type layer On, the P-type electrode and the N-type electrode are magnet, the P-type electrode one end and the N-type electrode away from the P-type layer One end away from the N-type layer is synonyms pole；
    Installed on drive circuit board and P-type electrode fixed block and N-type electrode are set on the position of the first Micro LED chips Fixed block, the P-type electrode fixed block and the N-type electrode fixed block are magnet, and the P-type electrode fixed block is away from the drive The one end of one end and the P-type electrode away from the P-type layer of dynamic circuit board is synonyms pole, and the N-type electrode fixed block is remote The one end of one end and the N-type electrode away from the N-type layer from the drive circuit board is synonyms pole；
    The drive circuit board and some first Micro LED chips are put into same solution, the P-type electrode is in magnetic Absorption is on the P-type electrode fixed block in the presence of power, while the N-type electrode is adsorbed in the N in the presence of magnetic force On type electrode fixed block, realize that the first Micro LED chips are fixedly mounted on the drive circuit board.
  2. 2. according to the method for claim 1, it is characterised in that some first Micro LED chips of making, including：
    Grow N-type layer, luminescent layer, P-type layer successively on substrate；
    The photoresist of the first figure is formed in the P-type layer using photoetching technique；
    The P-type layer and the luminescent layer are etched under the protection of the photoresist of first figure, is formed in the P-type layer Extend to the groove of the N-type layer；
    Remove the photoresist of first figure；
    The photoresist of second graph is formed in the N-type layer in the P-type layer and the groove using photoetching technique；
    Magnetic material is laid in the P-type layer exposed in the photoresist of the second graph and the photoresist of the second graph Material；
    Remove the photoresist of the second graph, the magnetic material in the P-type layer forms P-type electrode；
    The P-type electrode is put into the magnetic field of first direction, until the P-type electrode externally shows magnetic, described first Direction is parallel with the stacked direction of the first Micro LED chips；
    The light of the 3rd figure is formed in the N-type layer in the P-type layer, the P-type electrode and the groove using photoetching technique Photoresist；
    Magnetic material is laid in the N-type layer exposed in the photoresist of the 3rd figure and the photoresist of the 3rd figure Material；
    Remove the photoresist of the 3rd figure, the magnetic material in the N-type layer forms N-type electrode；
    The N-type electrode is put into the magnetic field of second direction, until the N-type electrode externally shows magnetic, described second Direction is opposite to the first direction.
  3. 3. according to the method for claim 1, it is characterised in that described that first Micro is installed on drive circuit board P-type electrode fixed block and N-type electrode fixed block are set on the position of LED chip, including：
    The photoresist of the 4th figure is formed on the drive circuit board using photoetching technique；
    Magnetic is laid on the drive circuit board exposed in the photoresist of the 4th figure and the photoresist of the 4th figure Property material；
    Remove the photoresist of the 4th figure, the magnetic material on the drive circuit board forms P-type electrode fixed block；
    The p-type fixed block is put into the magnetic field of third direction, it is described until the p-type fixed block externally shows magnetic Third direction is vertical with the surface for the photoresist that the drive circuit board forms the 4th figure；
    The photoresist of the 5th figure is formed on the drive circuit board and the P-type electrode fixed block using photoetching technique；
    Magnetic is laid on the drive circuit board exposed in the photoresist of the 5th figure and the photoresist of the 5th figure Property material；
    Remove the photoresist of the 5th figure, the magnetic material on the drive circuit board forms N-type electrode fixed block；
    The N-type fixed block is put into the magnetic field of fourth direction, it is described until the N-type fixed block externally shows magnetic Fourth direction is opposite with the third direction.
  4. 4. according to the method in claim 2 or 3, it is characterised in that the magnetic material is Al-Ni-Co series permanent-magnet alloy, iron Chromium cobalt system permanent-magnet alloy, permanent-magnet ferrite, rare earth permanent-magnetic material or composite permanent-magnetic material.
  5. 5. according to the method described in any one of claims 1 to 3, it is characterised in that described by the drive circuit board and some The first Micro LED chips are put into same solution, including：
    The drive circuit board is put into solution, the drive circuit board sets P-type electrode fixed block and N-type electrode fixed block Side back to ground；
    Some first Micro LED chips are put into the solution, some first Micro LED chips are in gravity It is fixedly mounted on under the collective effect of magnetic force on the diverse location of the drive circuit board.
  6. 6. according to the method described in any one of claims 1 to 3, it is characterised in that the solution is acetone soln.
  7. 7. according to the method described in any one of claims 1 to 3, it is characterised in that methods described also includes：
    Make some 2nd Micro LED chips, structure and the first Micro LED of the 2nd Micro LED chips The structure of chip is identical, and the color that the 2nd Micro LED chips emit beam is sent with the first Micro LED chips The color of light is different；
    Installed on the drive circuit board and the P-type electrode fixed block is set on the position of the 2nd Micro LED chips With the N-type electrode fixed block；
    The drive circuit board and some 2nd Micro LED chips are put into same solution, the 2nd Micro LED chip is fixedly mounted in the presence of magnetic force on the drive circuit board.
  8. 8. according to the method described in any one of claims 1 to 3, it is characterised in that methods described also includes：
    After some first Micro LED chips of making, the first Micro LED chips are detected；
    Choose except the underproof first Micro LED chips of detection.
  9. 9. according to the method described in any one of claims 1 to 3, it is characterised in that the P-type electrode is away from the P-type layer One end is N poles, and the one end of the N-type electrode away from the N-type layer is S poles.
  10. 10. according to the method described in any one of claims 1 to 3, it is characterised in that the first Micro LED chips are vertical Ultimate range between on the section of stacked direction 2 points is 3 μm~50 μm.
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