CN110335844B - MicroLED bulk transfer device and method based on selective heating demagnetization - Google Patents
MicroLED bulk transfer device and method based on selective heating demagnetization Download PDFInfo
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Abstract
The invention belongs to the technical field of mass transfer, and particularly discloses a micro LED mass transfer device and method based on selective heating demagnetization. The invention can realize patterning and selective mass transfer of the MicroLED and has the advantages of convenient operation, strong applicability, accurate positioning and the like.
Description
Technical Field
The invention belongs to the technical field of mass transfer, and particularly relates to a micro LED mass transfer device and method based on selective heating demagnetization.
Background
Micro light emitting diodes (micro LEDs, μ LEDs) are a new generation of display technology, and have higher brightness, higher light emitting efficiency, longer lifetime, and lower power consumption than existing Organic Light Emitting Diodes (OLEDs). The micro light emitting diode has the characteristics of self luminescence and no need of a backlight source, and each pixel can be addressed and independently driven to light.
The manufacturing process of the micro light emitting diode display generally includes thinning, miniaturizing and arraying a diode (LED) structure to make the size of the diode be about 10 micrometers, transferring a large number (tens of thousands to tens of thousands) of micro light emitting diode chips onto a display circuit substrate to form an LED array, and finally packaging. The key difficulty of this process is how to Transfer a large number of micro-led chips with a small scale onto a display circuit substrate, and Mass Transfer (Mass Transfer) technology is also developed. The mass transfer technology requires that micro-led chips with micron size are selectively transferred from a native substrate to a circuit substrate in batch, and because the micro-leds have very small size and the mass transfer technology requires very high yield (99.9999%), efficiency and transfer accuracy, the mass transfer technology also becomes the most challenging issue in the development process of micro-leds, and hinders the development of micro-leds.
In addition to batch transfer of micro leds onto a circuit substrate during mass transfer, selective transfer is also required to achieve the purpose of patterned transfer. At present, there are several techniques for selective transfer: 1) variable-pitch transfer is realized by film stretching and patterned laser, in the method, chips are temporarily adhered on a stretching layer of a high-molecular transparent film, then the transparent film is stretched to realize the adjustment of the chip pitch, and finally the chips are released by the patterned laser, so that the method has the problems of uneven stretching time pitch and the like, and the patterned laser has higher cost; 2) the selective transfer is realized by the transfer seal, the chip is selectively picked up by using the transfer seal with the microstructure in a patterning way, and then the chip is released to the circuit substrate, and the method has the problems of troublesome seal manufacturing, inaccurate positioning and the like.
Disclosure of Invention
Aiming at the defects or improvement requirements of the prior art, the invention provides a device and a method for transferring the huge amount of MicroLEDs based on selective heating demagnetization.
In order to achieve the above object, according to one aspect of the present invention, a bulk transfer device for micro leds based on selective heating demagnetization is provided, the device includes a substrate and a magnetic square array disposed on an upper surface of the substrate, each magnetic square in the magnetic square array has magnetism, upper and lower surfaces of the magnetic square array are opposite magnetic poles, and each magnetic square can lose magnetism under the action of external heating.
As a further preferred, the array of magnetic squares is preferably prepared as follows: and evaporating or sputtering a layer of magnetic material on the substrate, then arraying the magnetic material by laser cutting or etching, and finally putting the magnetic material into a magnetic field for magnetization so as to prepare the magnetic square array on the substrate.
As a further preference, the selective heating of the magnetic block to render it non-magnetic is achieved by: selectively electrifying the electrode of the target circuit substrate to light the corresponding MicroLED, and generating a thermal effect to heat the corresponding magnetic square block after the MicroLED is lighted, so that the magnetism of the corresponding magnetic square block is eliminated.
As a further preferred aspect, it is preferable that the selective energization of the target circuit substrate electrode is realized by using a driving circuit control unit, where the driving circuit control unit includes an upper computer, a lower computer, a row driver and a column driver, where the lower computer is in communication with the upper computer, the row driver and the column driver are both connected to the lower computer and the target circuit substrate electrode, and the lower computer controls the conduction of the corresponding row driver and the corresponding column driver according to an instruction of the upper computer, so as to energize the corresponding target circuit substrate electrode.
According to another aspect of the present invention, there is provided a micro led bulk transfer method based on selective heating demagnetization, which includes the following steps:
s1, transferring the MicroLED array to be transferred from the base to the middle transparent carrier substrate with the glue layer, and bonding the electrode of the MicroLED with the glue layer;
s2, pressing the device on the MicroLED arrays transferred to the middle transparent carrier substrate, enabling the magnetic square arrays of the device to correspond to the MicroLED arrays on the middle transparent carrier substrate one by one, then irradiating the adhesive layer on the middle transparent carrier substrate by ultraviolet light to reduce the viscosity of the adhesive layer, and capturing each MicroLED in the MicroLED arrays under the action of the corresponding magnetic square, so that the overall pickup of the MicroLEDs is realized;
s3, the device after picking up the MicroLEDs is pressed on a magnetic target circuit substrate, the MicroLED arrays on the device correspond to the electrode arrays on the target circuit substrate one by one, the magnetic square in the magnetic square array (12) is selectively heated to lose magnetism, the MicroLEDs on the magnetic square losing magnetism are captured by the corresponding electrodes on the target circuit substrate, and therefore massive transfer of the MicroLEDs based on selective heating demagnetization is completed.
As a further preference, step S1 includes the following sub-steps:
s11, preparing a magnetic MicroLED array on a substrate;
s12, pressing the MicroLED array on the adhesive layer of the middle transparent carrier substrate to bond the electrodes of the MicroLEDs with the adhesive layer;
s13, irradiating uv laser at the interface of the micro led array and the substrate, so that the micro led array is separated from the substrate, thereby transferring the micro led array as a whole onto the intermediate transparent carrier substrate.
As a further preferred method, in step S3, the selective heating of the magnetic dice in the magnetic dice array to make them lose magnetism is preferably implemented as follows: selectively electrifying the electrode of the target circuit substrate to light the corresponding to-be-transferred MicroLED, and generating a thermal effect to heat the corresponding magnetic square block after the to-be-transferred MicroLED is lighted, so that the magnetism of the corresponding magnetic square block disappears.
Generally, compared with the prior art, the above technical solution conceived by the present invention mainly has the following technical advantages:
1. the invention realizes the purpose of selectively transferring the micro light-emitting diode to the target circuit substrate by selectively heating the magnetic block to lose magnetism (namely selectively demagnetizing), can selectively and patternwise transfer the arrayed micro light-emitting diode to the target circuit substrate, and effectively solves the problem of unmatched space between the micro light-emitting diode array and the target circuit substrate.
2. When the micro light-emitting diode array is prepared on the primary substrate, a certain amount of dead spots may exist, the micro light-emitting diode transfer is realized by selectively electrifying the electrode of the target circuit substrate to light the corresponding micro light-emitting diode to be transferred, when the micro light-emitting diode is a dead spot, the micro light-emitting diode cannot be lightened, namely cannot be transferred, compared with other selective batch transfer methods, the transfer of the dead spots can be effectively avoided, and the transfer yield is ensured.
3. The invention realizes the huge transfer of the micro light-emitting diode based on the principle of selective heating demagnetization, has no problem of uneven stretching time distance compared with the prior art, does not need to manufacture a stamp, and has the advantages of low cost, simple structure, high transfer efficiency, accurate positioning and the like.
Drawings
FIG. 1 is a schematic three-dimensional structure diagram of a MicroLED bulk transfer device based on selective heating demagnetization according to an embodiment of the present invention;
FIG. 2 is a schematic two-dimensional cross-sectional view of a MicroLED bulk transfer device based on selective heat demagnetization provided by an embodiment of the present invention;
FIG. 3 is a schematic diagram of a process for transferring micro light-emitting diodes from a substrate to an intermediate transparent carrier substrate according to an embodiment of the present invention;
fig. 4 is a schematic process diagram for realizing the overall pickup of the micro light emitting diode by the transfer device according to the embodiment of the invention;
FIG. 5 is a schematic diagram of a process for implementing selective release of micro light-emitting diodes by a transfer device according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a process of removing magnetism of a magnetic block by selectively lighting micro LEDs according to an embodiment of the present invention;
fig. 7 is a schematic diagram of a driving circuit control unit of the target circuit substrate according to an embodiment of the present invention.
The same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein:
10-transfer device, 11-substrate, 12-magnetic block array, 13-heated magnetic block, 14-unheated magnetic block, 20-substrate, 30-micro light-emitting diode, 31-micro light-emitting diode electrode, 32-micro light-emitting diode to be transferred, 33-micro light-emitting diode without transfer, 40-intermediate transparent carrier substrate, 41-glue layer, 50-ultraviolet laser, 51-ultraviolet light, 60-target circuit substrate, 61-target circuit substrate electrode, 62-lead, 63-upper computer, 64-lower computer, 65-row drive and 66-row drive.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1-2, a huge transfer device of micro light emitting diode (micro led) based on selective heating demagnetization provided by the embodiment of the present invention includes a substrate 11 and a magnetic square array 12 disposed on the upper surface of the substrate 11, each magnetic square in the magnetic square array 12 has magnetism, and the upper and lower surfaces (i.e. upper and lower ends) of each magnetic square are unlike magnetic poles, i.e. the upper surface of the magnetic square is S pole, the lower surface is N pole, or the upper surface is N pole, the lower surface is S pole, the magnetic poles of each magnetic square are arranged consistently, each magnetic square can reach its curie temperature by external heating to reduce its magnetism until it disappears, during the transfer operation, the magnetic square array 12 corresponds to the magnetic micro led array to be transferred one-to-one, the magnetic square array 12 first picks up the micro led array as a whole, then selectively heating the magnetic block (i.e. selecting the magnetic block corresponding to the micro light-emitting diode to be transferred) to make it lose magnetism, so as to selectively transfer the micro light-emitting diode onto the magnetic target circuit substrate, thereby implementing the bulk transfer of the micro light-emitting diode based on selective heating demagnetization.
Specifically, the magnetic square array 12 may be formed by evaporating or sputtering a layer of magnetic material on the substrate 11, then forming the magnetic square array into an array by means of laser cutting or reactive ion etching, and finally magnetizing the magnetic square array in a magnetic field. Each magnetic square block obtained by the method has certain magnetism so as to effectively adsorb the micro light-emitting diode to be transferred. The upper surface and the lower surface of the magnetic square block are the synonym magnetic poles, so that the magnetic field around the magnetic square block is mainly concentrated on two sides of the synonym magnetic poles, namely the magnetic field intensity of the upper side and the lower side of the magnetic square block is stronger, and the magnetic field intensity of the periphery of the magnetic square block is weaker, so that the influence on the adjacent micro light-emitting diodes is avoided, and the magnetism of the magnetic square block can be quickly reduced until the magnetic square block disappears after the Curie temperature of the magnetic square block is reached through external heating. By the above characteristics of the magnetic block 12, the overall pickup can be realized, then the micro light emitting diode can be released selectively, and finally the micro light emitting diode can be patterned and transferred onto the target circuit substrate selectively.
The invention also provides a micro light-emitting diode bulk transfer method based on selective heating demagnetization, which comprises the following steps:
s1 transferring the micro LED array to be transferred from the substrate 20 to the intermediate transparent carrier substrate 40 prepared with the glue layer 41, so that the electrodes of the micro LEDs are bonded with the glue layer 41;
s2 implements a global pick (as shown in fig. 4):
pressing the transfer device 10 of the invention on the micro light-emitting diode array transferred to the middle transparent carrier substrate 40, and enabling the magnetic square array 12 of the device to correspond to the micro light-emitting diode array on the middle transparent carrier substrate one by one, then irradiating the adhesive layer 41 on the middle transparent carrier substrate 40 by using ultraviolet light to reduce the viscosity of the adhesive layer, and capturing each micro light-emitting diode in the micro light-emitting diode array by the corresponding magnetic square under the action of magnetic force, thereby realizing the integral pickup of the micro light-emitting diode;
s3 achieving selective release (as shown in fig. 5):
pressing the device with the picked micro light-emitting diodes on a magnetic target circuit substrate 60, and enabling the micro light-emitting diode arrays on the device to correspond to the electrode arrays on the target circuit substrate one by one, so that the micro light-emitting diode electrodes are in good contact with the circuit substrate electrodes; the target circuit substrate electrode is then selectively energized, with the energized target circuit substrate electrode being able to illuminate the micro light emitting diode thereon, and the non-energized target circuit substrate electrode being unable to illuminate the micro light emitting diode thereon. Specifically, the target circuit substrate electrode has a certain magnetism, the intensity of which is much smaller than that of the magnetic square block on the transfer device, and the target circuit substrate electrode is selectively electrified to light the corresponding micro light-emitting diode. The micro light-emitting diode can generate a heat effect when being lightened, the heat power of the micro light-emitting diode can be controlled by controlling the magnitude of the input current, the lightened micro light-emitting diode can heat the corresponding magnetic square block, and the magnetism of the magnetic square block can be rapidly reduced until the magnetism disappears after the Curie temperature of the magnetic square block is reached. And because of different magnetic square materials, the Curie point of the target circuit substrate electrode and the electrode of the micro light-emitting diode is higher, and the magnetic action between the target circuit substrate electrode and the electrode of the micro light-emitting diode is not influenced. Under the guidance of the magnetic force of the target circuit substrate electrode, the micro light-emitting diode is captured by the electrode of the target circuit substrate, so that the selective release of the micro light-emitting diode is realized, and finally, the selective transfer of the micro light-emitting diode from the substrate to the target circuit substrate is realized.
Specifically, as shown in fig. 3, step S1 includes the following sub-steps:
s11, preparing a magnetic micro led array on a substrate 20 (e.g., a sapphire substrate), where the electrodes of the micro leds 30 have certain magnetism so as to be picked up or released by a magnetic block, and how to make the electrodes of the micro leds have magnetism, which can be realized by the conventional method, such as doping some magnetic materials or plating a layer of magnetic materials on the electrodes when making the electrodes of the micro leds, or making the electrodes of the micro leds by magnetic materials so as to have magnetism, which is not described herein in detail for the prior art, and finally forming an arrayed and tightly arranged micro led array, where the size of each micro led 30 is about 10 μm to 20 μm;
s12, pressing the micro light-emitting diode array on the adhesive layer 41 of the middle transparent carrier substrate 40 to bond the electrodes of the micro light-emitting diodes with the adhesive layer 41;
s13 irradiating the interface of the micro light emitting diode 30 and the substrate 20 with the ultraviolet laser 50 through the substrate 20, so that the adhesion strength of the interface of the micro light emitting diode 30 and the substrate 20 is significantly reduced to separate the micro light emitting diode 30 from the substrate 20, thereby transferring the micro light emitting diode 30 onto the intermediate transparent carrier substrate 40 as a whole.
Specifically, the electrodes of the target circuit substrate have magnetism, so as to accurately position the micro light emitting diode, and how to make the electrodes of the target circuit substrate have magnetism can be implemented by using the conventional method, for example, some magnetic materials can be doped when the electrodes of the target circuit substrate are manufactured, or a layer of magnetic materials is plated on the electrodes of the target circuit substrate, or the electrodes are made of magnetic materials so as to have magnetism, and the like, which is not described herein in detail for the prior art.
Further, in step S2, since the intermediate transparent carrier substrate performs a temporary transition function, the interfacial adhesion between the micro-led electrodes and the glue layer 41 can be reduced until disappeared, so as to release the micro-led array, wherein the method includes modifying the glue layer by ultraviolet irradiation to reduce the viscosity thereof, and the like. Specifically, the ultraviolet light 51 is irradiated on the adhesive layer 41 through the intermediate transparent carrier substrate 40 for a certain time on the non-adhesive side of the intermediate transparent carrier substrate 40, so that the adhesiveness of the adhesive layer 41 for bonding the micro light emitting diode 30 is significantly reduced. The residual viscosity of the adhesive layer can be controlled by ultraviolet irradiation light intensity and time, the transferred chip can be prevented from being polluted, and the specific irradiation light intensity and time can be determined according to actual needs. Specifically, the adhesive layer 41 may be a UV photoresist or a light-induced photoresist, which is widely used in the field of transferring micro devices and is not described herein. Under the action of the magnetic force between the magnetic block 12 of the transfer device and the micro-leds electrodes, the micro-leds 30 are captured by the corresponding magnetic block 12, thereby achieving the overall pick-up of the micro-leds 30 onto the transfer device 10.
In a preferred embodiment, in step S3, the electrodes of the target circuit substrate are selectively controlled by an external control command to energize the corresponding micro light emitting diodes 32 to be transferred, the micro light emitting diodes to be transferred generate a thermal effect when being illuminated, the illuminated micro light emitting diodes 32 to be transferred heat the corresponding magnetic squares thereon, and the magnetism of the magnetic squares is rapidly reduced until the magnetic squares disappear after the curie temperature of the magnetic squares is reached, which is an irreversible process, that is, the magnetic squares which have been heated and demagnetized still have no magnetism after the temperature of the magnetic squares is returned to room temperature. Under the action of the magnetic force of the target circuit substrate electrode, the micro light-emitting diode 32 to be transferred is captured by the target circuit substrate electrode, so that the transfer of the micro light-emitting diode is realized. The micro light emitting diode 33 which does not need to be transferred (i.e. the micro light emitting diode which is not lighted) is still adsorbed on the corresponding magnetic square block and does not transfer, thereby realizing the patterned and selective transfer of the micro light emitting diode to the target circuit substrate 60, wherein the patterning is obtained by selectively lighting the micro light emitting diode through the transfer method, and heating and demagnetizing the corresponding magnetic square block by utilizing the heat effect when the micro light emitting diode emits light, thereby realizing the selective release. The micro light emitting diodes which are not transferred at this time can wait for the next transfer, and after all the micro light emitting diode arrays on the transfer device 10 are transferred, the transfer device 10 can be placed into the magnetic field again for magnetization, and a new transfer is started.
FIG. 6 is a schematic diagram of a magnetic block being heated to remove its magnetic properties by selectively lighting micro LEDs, the general process is as follows: the transfer device 10 with the absorbed micro light-emitting diode array is pressed onto the target circuit substrate 60, so that the micro light-emitting diode array corresponds to the target circuit substrate electrode 61, and specifically, the micro light-emitting diode electrode 31 and the target circuit substrate electrode 61 are in good contact and can be normally conducted. A lead 62 is connected to each target circuit substrate electrode 61, and the target circuit substrate electrode 61 is selectively energized through each lead 62 to light the corresponding micro led 32 to be transferred. Theoretical calculations indicate that when the light irradiance of the micro led pixel increases from 1 mw/sq mm to 20 mw/sq mm at room temperature, the internal maximum temperature increases from 100 ℃ to about 150 ℃. The thermal power of the micro light-emitting diode can be controlled by controlling the magnitude of the current input by the electrode lead, the photovoltaic illumination of the micro light-emitting diode and the temperature of the working environment of the micro light-emitting diode, and further the surface temperature of the micro light-emitting diode is controlled. The lighted micro light emitting diode 32 to be transferred can heat the magnetic square block above the light emitting diode, the magnetism of the heated magnetic square block 13 is rapidly reduced until the heated magnetic square block disappears after reaching the Curie temperature of the heated magnetic square block, and the magnetic square block still has no magnetism after being recovered to the normal temperature. A feasible magnetic square material for the step is a soft magnetic ferrite material which is prepared by mixing and sintering powders of iron oxide, manganese oxide, zinc oxide and the like, has a mature preparation process, is commonly used for a temperature sensing magnet part of a temperature sensor in an electric cooker, has the Curie temperature of about 103 +/-2 degrees, and can be adjusted and controlled to a larger extent by changing the proportion of the components and doping other materials. The micro light-emitting diode electrode 31 and the target circuit substrate electrode 61 are made of materials with Curie temperature higher than that of the magnetic square block, so that the heat effect of the micro light-emitting diode only reaches the Curie temperature of the magnetic square block but not reaches the Curie temperature of the micro light-emitting diode electrode 31 and the target circuit substrate electrode 61, and the magnetic action between the micro light-emitting diode electrode 31 and the target circuit substrate electrode 61 is not influenced. The electrode can be made of various materials, such as Al-Ni-Co permanent magnetic alloy with Curie temperature of about 860 ℃, Fe-Cr-Co permanent magnetic alloy with Curie temperature of about 680 ℃, which is far higher than that of the magnetic square. The micro light emitting diode 32 to be transferred is captured by the target circuit substrate electrode by the magnetic force of the target circuit substrate electrode 61, thereby realizing the transfer of the micro light emitting diode. The unlighted micro light-emitting diodes are still adsorbed on the corresponding unheated magnetic blocks 14 and are not transferred, so that the micro light-emitting diodes are selectively transferred to the target circuit substrate in a patterning mode.
Fig. 7 is a schematic diagram of a control unit of a driving circuit of a target circuit substrate, in which the driving circuit system mainly selectively energizes electrodes on the target circuit substrate to selectively light the micro light emitting diodes, so as to finally achieve the purpose of selective and patterned transfer. The drive circuit control unit is a conventional control system in the field, and mainly comprises an upper computer 63, a lower computer 64 which is communicated with the upper computer 63, and a row drive 65 and a column drive 66 which are respectively connected with the lower computer 64 and a target circuit substrate electrode, wherein the upper computer 63 can adopt a common PC (personal computer) and is mainly responsible for editing display data and transmitting the display data to the lower computer 64, the rows of electrodes of the target circuit substrate 60 are then sequentially gated under the control of the lower computer 64 (i.e. the electrodes of the corresponding row of the target circuit substrate 60 are brought into communication by the row drive 65), the data for each row and column is also prepared before each row is strobed, and once the row is strobed, the electrodes on that row are selectively energized according to the column data, that is, the column driver 66 is used to make the electrodes of the corresponding column of the target circuit substrate 60 communicate, so as to selectively energize the corresponding electrodes on the target circuit substrate 60.
The transfer device and the method provided by the invention selectively light the micro light-emitting diode by utilizing the mature drive circuit control technology, so as to utilize the heat effect when the micro light-emitting diode emits light to rapidly heat the corresponding magnetic block to ensure that the temperature of the magnetic block reaches the Curie temperature, thus the magnetism of the magnetic block can be rapidly reduced until the magnetic block disappears, and the individually controllable patterning and selective mass transfer of the micro light-emitting diode can be realized.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (7)
1. The device is characterized by comprising a substrate (11) and a magnetic square array (12) arranged on the upper surface of the substrate (11), wherein each magnetic square in the magnetic square array (12) has magnetism, the upper surface and the lower surface of the magnetic square array are different magnetic poles, each magnetic square can lose magnetism under the action of external heating, when the bulk transfer device performs transfer action, the magnetic square array (12) corresponds to the magnetic MicroLED array to be transferred one by one, the magnetic square array (12) is used for picking up the MicroLED array in a whole manner, then the magnetic square is selectively heated to lose magnetism so as to selectively transfer the MicroLED onto a target circuit substrate with magnetism, and therefore the bulk transfer of the MicroLED based on selective heating and demagnetization is achieved.
2. A micro led bulk transfer device based on selective heat demagnetization according to claim 1, wherein the magnetic square array (12) is prepared by: and (2) evaporating or sputtering a layer of magnetic material on the substrate (11), then arraying the magnetic material by laser cutting or etching, and finally putting the magnetic material into a magnetic field for magnetization so as to prepare the magnetic square array (12) on the substrate (11).
3. A micro led bulk transfer device based on selective heat demagnetization according to claim 1 or 2, wherein the selective heating of the magnetic block to make it demagnetized is achieved by: selectively electrifying the electrode of the target circuit substrate to light the corresponding MicroLED, and generating a thermal effect to heat the corresponding magnetic square block after the MicroLED is lighted, so that the magnetism of the corresponding magnetic square block is eliminated.
4. The MicroLED bulk transfer device based on selective heating demagnetization of claim 3, wherein a driving circuit control unit is adopted to realize selective energization of the target circuit substrate electrode, the driving circuit control unit comprises an upper computer (63), a lower computer (64), a row driver (65) and a column driver (66), wherein the lower computer (64) is communicated with the upper computer (63), the row driver (65) and the column driver (66) are both connected with the lower computer (64) and the target circuit substrate electrode, and the lower computer (64) controls the corresponding row driver (65) and the corresponding column driver (66) to be conducted according to an instruction of the upper computer (63) so as to electrify the corresponding target circuit substrate electrode.
5. A method for transferring a huge amount of MicroLED based on selective heating demagnetization is characterized by comprising the following steps:
s1, transferring the MicroLED array to be transferred from the substrate (20) to an intermediate transparent carrier substrate (40) prepared with a glue layer (41), and bonding the electrode of the MicroLED with the glue layer (41);
s2 pressing the device according to any one of claims 1-4 on the array of MicroLEDs transferred to the intermediate transparent carrier substrate (40) and making the array of magnetic squares (12) of the device correspond to the array of MicroLEDs on the intermediate transparent carrier substrate one by one, then irradiating the glue layer (41) on the intermediate transparent carrier substrate (40) with ultraviolet light to reduce the viscosity, and capturing each MicroLED in the array of MicroLEDs under the action of the corresponding magnetic squares, thereby realizing the overall pickup of the MicroLEDs;
s3, the device after picking up the MicroLEDs is pressed on a magnetic target circuit substrate (60), the MicroLED arrays on the device correspond to the electrode arrays on the target circuit substrate one by one, the magnetic squares in the magnetic square array (12) are selectively heated to lose magnetism, the MicroLEDs on the magnetic squares losing magnetism are captured by the corresponding electrodes on the target circuit substrate (60), and therefore massive transfer of the MicroLEDs based on selective heating demagnetization is achieved.
6. The method for transferring a micro led bulk based on selective heat demagnetization of claim 5, wherein the step S1 includes the following sub-steps:
s11, preparing a magnetic MicroLED array on a substrate (20);
s12, pressing the MicroLED array on the adhesive layer (41) of the middle transparent carrier substrate (40) to enable the electrodes of the MicroLEDs to be bonded with the adhesive layer (41);
s13 irradiates an ultraviolet laser (50) at the interface of the micro led array and the substrate (20) so that the micro led array is separated from the substrate (20), thereby transferring the micro led array as a whole onto an intermediate transparent carrier substrate (40).
7. The method for transferring a MicroLED bulk based on selective heat demagnetization according to claim 5 or 6, wherein the step S3 of selectively heating the magnetic dice in the magnetic dice array (12) to make them demagnetized is performed by: selectively electrifying the electrode of the target circuit substrate to light the corresponding MicroLED, and generating a thermal effect to heat the corresponding magnetic square block after the MicroLED is lighted, so that the magnetism of the corresponding magnetic square block is eliminated.
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6763452B1 (en) * | 2019-04-15 | 2020-09-30 | 富士ゼロックス株式会社 | Light emitting device, optical device and information processing device |
| CN110828364B (en) * | 2019-11-20 | 2023-07-14 | 广东省半导体产业技术研究院 | Mass transfer method, manufacturing method of display device and display device |
| WO2021109007A1 (en) * | 2019-12-03 | 2021-06-10 | 重庆康佳光电技术研究院有限公司 | Mass transfer method and system for semiconductor element |
| WO2021168615A1 (en) * | 2020-02-24 | 2021-09-02 | 重庆康佳光电技术研究院有限公司 | Mass transfer method for light-emitting diodes, and display back panel assembly |
| CN113540309A (en) * | 2020-04-22 | 2021-10-22 | 重庆康佳光电技术研究院有限公司 | Mass transfer method of Micro LED |
| CN111508888B (en) * | 2020-04-26 | 2024-04-05 | Tcl华星光电技术有限公司 | LED array transfer device and LED array transfer method |
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| CN112635400B (en) * | 2021-01-07 | 2022-10-04 | Tcl华星光电技术有限公司 | Magnetic type micro LED bulk transfer structure and method |
| CN114193937B (en) * | 2021-11-05 | 2022-10-14 | 华中科技大学 | Mu LED full-color display manufacturing method and equipment for removing dead spots and self-aligning jet printing |
| CN114141930A (en) * | 2021-11-22 | 2022-03-04 | 惠州华星光电显示有限公司 | Light emitting diode transfer method, light emitting substrate and display panel |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107680983A (en) * | 2017-10-30 | 2018-02-09 | 厦门乾照光电股份有限公司 | Micro LED array devices, pick device and its related production, conveyer method |
| CN108400108A (en) * | 2018-03-23 | 2018-08-14 | 京东方科技集团股份有限公司 | A kind of micro element transfer device and micro element transferring system |
| CN109216400A (en) * | 2018-10-29 | 2019-01-15 | 厦门乾照光电股份有限公司 | Micro LED array device, flood tide transfer device and correlation technique |
| CN109273565A (en) * | 2018-10-15 | 2019-01-25 | 华映科技（集团）股份有限公司 | A kind of transfer method of micro- light-emitting diode chip for backlight unit |
| CN109326548A (en) * | 2018-08-29 | 2019-02-12 | 华映科技（集团）股份有限公司 | A method of realizing the transfer of vertical structure mLED or uLED flood tide |
| CN109524512A (en) * | 2018-11-15 | 2019-03-26 | 华中科技大学 | Micro-led flood tide transfer method based on controllable micro reflector array |
| CN109661122A (en) * | 2018-11-09 | 2019-04-19 | 华中科技大学 | It is a kind of suitable for micro-led selective flood tide transfer method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI605536B (en) * | 2017-04-12 | 2017-11-11 | 財團法人工業技術研究院 | Magnetic transfer module and method for transferring electronic element |
-
2019
- 2019-06-17 CN CN201910519471.6A patent/CN110335844B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107680983A (en) * | 2017-10-30 | 2018-02-09 | 厦门乾照光电股份有限公司 | Micro LED array devices, pick device and its related production, conveyer method |
| CN108400108A (en) * | 2018-03-23 | 2018-08-14 | 京东方科技集团股份有限公司 | A kind of micro element transfer device and micro element transferring system |
| CN109326548A (en) * | 2018-08-29 | 2019-02-12 | 华映科技（集团）股份有限公司 | A method of realizing the transfer of vertical structure mLED or uLED flood tide |
| CN109273565A (en) * | 2018-10-15 | 2019-01-25 | 华映科技（集团）股份有限公司 | A kind of transfer method of micro- light-emitting diode chip for backlight unit |
| CN109216400A (en) * | 2018-10-29 | 2019-01-15 | 厦门乾照光电股份有限公司 | Micro LED array device, flood tide transfer device and correlation technique |
| CN109661122A (en) * | 2018-11-09 | 2019-04-19 | 华中科技大学 | It is a kind of suitable for micro-led selective flood tide transfer method |
| CN109524512A (en) * | 2018-11-15 | 2019-03-26 | 华中科技大学 | Micro-led flood tide transfer method based on controllable micro reflector array |
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