CN109087989A - A kind of preparation method of Multifunction thermoelectric film power generation and light intensity sensor part - Google Patents
A kind of preparation method of Multifunction thermoelectric film power generation and light intensity sensor part Download PDFInfo
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- CN109087989A CN109087989A CN201810821846.XA CN201810821846A CN109087989A CN 109087989 A CN109087989 A CN 109087989A CN 201810821846 A CN201810821846 A CN 201810821846A CN 109087989 A CN109087989 A CN 109087989A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
Abstract
The invention discloses a kind of preparation methods of Multifunction thermoelectric film power generation and light intensity sensor part, belong to miniature thin-film function element energy collection and field of sensing technologies.The method includes the steps: substrate is pre-processed；Deposit patterned high density N-type thermal electric film in substrate after the pre-treatment；The N-type thermal electric film is made annealing treatment；Deposit patterned high density p-type thermal electric film and electrode film in substrate after the pre-treatment, the thermocouple that electrode film forms the pattern of p-type thermal electric film and N-type thermal electric film are connected；Absorption film post package, which is pasted, in the hot end of thermocouple forms thermo-electric device；Thermo-electric device and the Fresnel Lenses, radiator structure and shell are carried out to be assembled to form the Multifunction thermoelectric film power generation and light intensity sensor part.Power generation and light intensity sensing may be implemented in the present invention, by light intensity sensing testing, has the characteristics that high output voltage, high-responsivity etc. using thermal electric film device prepared by the method for the present invention.
Description
Technical field
The invention belongs to miniature thin-film function element energy collection and field of sensing technologies, and in particular to a kind of high output electricity
Pressure, high-responsivity, highly sensitive, high accuracy, high reliability and wide response range the power generation of multi-functional high density thermal electric film with
The preparation method of light intensity sensor part.
Background technique
Thermo-electric device does not include any moving parts as full solid-state device, therefore reduces physically and electrically failure, and
And there is high reliability also without noise in long-term independent operational process.Thermo-electric device based on Seebeck effect is
Applied to fields such as power generation, temperature measurement and infrared acquisitions.But with the development of low-power consumption and wireless electronic device, and
The components such as sensor, MEMS are kept updating, it would be highly desirable to a kind of system that micro-energy is collected and sensed.Thin film thermoelectric
The output power of device is able to satisfy the power demands of many systems up to microwatt even milliwatt rank.And relative to block heat
Electrical part, thin-film device have many advantages, such as small in size, light-weight, response quickly, easily integrate with other devices.
Thin film sensor is due to being widely used in communication, military, fire report with high responsiveness, the fast speed of response
In the fields such as police, aerospace, but the complexity of low transfer efficiency and preparation restricts its development, therefore also needs in material
Material, the structure design of device and the more researchs of system integration aspect investment.In addition, in solar heat electrical part, input
What it is into device is fixed heat flow rather than the temperature difference, the distribution of temperature with the structure of device and locating environment etc. because
Element changes.(bibliography [1] Kraemer D, Jie Q, Mcenaney K, et in the report of Kraemer
al.Concentrating solar thermoelectric generators with a peak efficiency of
7.4% [J] .Nature Energy, 2016,1.), describe a kind of high-performance sun block thermoelectricity with light and heat aggregation
Generator.However, in the combination of energy accumulating method and thin film thermoelectric device, being rarely reported due to assembly difficulty.Heat accumulation
Module is commonly attached on electrothermal module, the fexible film thermo-electric device mechanical performance limited and poor due to contact area, because
This is difficult to be cooperated.Although (bibliography [2] Mizoshiri M, Mikami M, Ozaki K, et in the literature
al.Thin-Film Thermoelectric Modules for Power Generation Using Focused Solar
Light [J] .Journal of Electronic Materials, 2012,41 (6): 1713-1719.) it has attempted to sunlight
Assembled, but prepared thin film thermoelectric device generated energy is very low.
The basic physical principle of traditional optical detector is generally divided into two classes: photon effect and photo-thermal effect.According to photon
The photo-sensing device that effect prepares is constantly present noise only to having higher sensitivity in the wave-length coverage of part；Base
It is no to optical wavelength range selective in principle in the photo-sensing device of the preparation of photo-thermal effect, but since material inhales infrared ray
High income is rarely used in the detection of visible light so being widely used in the detection to infrared ray.
Summary of the invention
To solve problems of the prior art, the present invention provide a kind of high output voltage, high-responsivity, it is highly sensitive,
The design of the multi-functional high density thermal electric film power generation of high accuracy, high reliability and wide response range and light intensity sensor part with
Preparation method realizes that thermal energy is mutually converted with electric energy using thermoelectric material solid interior carrier transport, by designing high density
Thermal electric film device develops compatible micro Process preparation method, greatly improves the power output of device, Intensity response and reliable
Property, it is sensed to carry out environment thermal energy and collect power generation with active light intensity, realizing has the dual of thermo-electric generation and sensing
Function.
The multi-functional high density thermal electric film power generation and the design and preparation method of light intensity sensor part specifically include as
Lower realization step:
Step 1: being pre-processed to substrate；
The pretreated process cleans substrate specifically by ultrasound and plasma, obtains pretreated base
Bottom, to improve substrate adhesion strength and reliability；
The material of the substrate is glass, quartz, aluminium nitride, aluminium oxide, polyimides (PI), poly terephthalic acid second two
Alcohol ester or dimethyl silicone polymer；
Step 2: depositing the N-type thermal electric film of given pattern in substrate after the pre-treatment；
Specifically by magnetron sputtering and the micro-machined technique of photoetching-removing, deposits and obtain in substrate after the pre-treatment
The N-type thermal electric film with given pattern is taken, the N-type thermal electric film is specially N-type-Bi2Te3Base thermal electric film, the N-type-
Bi2Te3Base thermal electric film with a thickness of 1 μm -20 μm；
Step 3: being made annealing treatment to the N-type thermal electric film；
The annealing specifically: by the N-type thermal electric film in the case where temperature is 350 DEG C -400 DEG C and reducing atmosphere
Annealing 20-60 minutes, the high-performance N-type thermal electric film after obtaining annealing；
Step 4: depositing the p-type thermal electric film of given pattern in substrate after the pre-treatment；
Specifically by magnetron sputtering and the micro-machined technique of photoetching-removing, deposits and obtain in substrate after the pre-treatment
The p-type thermal electric film with given pattern is taken, the p-type thermal electric film is specially p-type-Sb2Te3Base thermal electric film, the p-type-
Sb2Te3Base thermal electric film with a thickness of 1 μm -20 μm；
The p-type thermoelectric arm in N-type thermoelectric arm and adjacent p-type thermal electric film in the N-type thermal electric film forms a pair
Thermocouple.
Step 5: being deposited in substrate after the pre-treatment by magnetron sputtering and the micro-machined technique of photoetching-removing
Copper/nickel electrode film；
The deposition of copper/nickel electrode film is specifically by magnetron sputtering and the micro-machined technique of photoetching-removing pre-
The very thin film figure preparation of high density, high-reliability electrical is carried out in substrate that treated, is prepared nickel layer pattern first, is sequentially connected with all
Thermoelectric arm, then prepares one layer of layers of copper on nickel layer pattern, and nickel layer and layers of copper form copper/nickel electrode Thinfilm pattern.
Step 6: pasting absorption film in all pyrometer fire-ends；
And the thermocouple, copper/nickel electrode film and absorption film are encapsulated and to form thermo-electric device with casting glue；
Step 7: the thermo-electric device with Fresnel Lenses, radiator structure and shell be assembled to form multi-functional
The power generation of high density thermal electric film and light intensity sensor part.
The thermo-electric device is fixed on radiator structure upper surface, and is arranged below Fresnel Lenses, passes light through Fei Nie
It is focused to and the consistent focal beam spot of absorption film size and shape after your lens.
The top setting Fresnel Lenses of the shell is to improve energy density by optically focused, by adjusting the luxuriant and rich with fragrance alunite
The distance between absorption film on that lens and thermo-electric device, the focal beam spot after passing light through Fresnel Lenses falls in absorption film
On, enclosure interior is provided with radiator structure, and the thermo-electric device is fixed on radiator structure upper surface, to realize thermal electric film device
The foundation of the big temperature difference of part hot and cold side.Under intensity of illumination effect, heat absorption film temperature is improved, and pyrometer fire-end temperature increases；According to
Seebeck effect principle can generate corresponding electromotive force between hot end and cold end, generate output voltage；Meanwhile it can acquire defeated
Voltage out can calculate the size of intensity of illumination according to the corresponding relationship of output voltage and intensity of illumination, realize illumination is strong
The function that degree is converted to convenient for acquisition and the output voltage of measurement.
The focal beam spot is identical as the shape and size of absorption film, the shape and size phase of the absorption film and hot end
Together.
The present invention has the advantages that
1, the present invention utilize the micro-machined technique of photoetching-removing, realize Miniaturized Thermoelectric device middle-high density thermocouple with
The patterning of electrode film is processed.
2, the present invention is aided with annealing process, realizes the promotion of thermo-electric device conducting material thermoelectricity performance.
3, the temperature difference at thermocouple both ends is promoted in thermo-electric device of the invention, the generating efficiency of thermo-electric device and
Output voltage is greatly improved.
4, by carrying out light intensity sensing testing to it, thermo-electric device of the invention has high output voltage, high-responsivity, height
The characteristics of sensitive, high accuracy, high reliability and wide response range.
Detailed description of the invention
Fig. 1 is multi-functional high density thermal electric film provided by the present invention and light intensity sensor part structural schematic diagram；
Fig. 2 is thermo-electric device structural schematic diagram provided by the present invention；
Fig. 3 is thermo-electric device of the present invention and electrode film positional diagram；
Fig. 4 is that thermocouple is connected partial schematic diagram with copper/nickel electrode film in the present invention；
Fig. 5 is that the voltage generated with/without the lower thermo-electric device of the present invention of illumination and cold heat end temperature change with time and show
It is intended to；
Fig. 6 is that the voltage of the thermo-electric device of the present invention generation under different optical power densities changes with time schematic diagram；
Fig. 7 is the relation schematic diagram between the output voltage and different optical power densities of thermo-electric device of the present invention；
Fig. 8 is thermo-electric device of the present invention under different light application times, the output voltage of generation with optical power density variation
Schematic diagram.
In figure:
1, Fresnel Lenses；2, shell；3, thermo-electric device；
4, radiator structure；5, absorption film；6, substrate；
7, copper/nickel electrode film；8, p-type thermal electric film；9, N-type thermal electric film.
Specific embodiment
Below in conjunction with drawings and examples, the present invention is described in further detail.
The present invention provides the design and preparation method of a kind of multi-functional high density thermal electric film power generation and light intensity sensor part,
Realize that thermal energy is mutually converted with electric energy using thermoelectric material solid interior carrier transport, by designing high density thermal electric film device
Part develops compatible micro Process preparation method, power output, Intensity response and the reliability of device is greatly improved, to carry out
Environment thermal energy is collected power generation and is sensed with active light intensity, realizes there is the dual function of thermo-electric generation and sensing, prepared
Thermal electric film power generation with light intensity sensor part have high output voltage, high-responsivity, highly sensitive, high accuracy, high reliability
With wide response range, it is prepared by following specific steps:
Step 1: being pre-processed to substrate；
The pretreated process cleans substrate specifically by ultrasound and plasma, obtains pretreated base
Bottom, to improve substrate adhesion strength and reliability.The pretreated substrate surface is smooth, and the substrate material is glass
Glass, quartz, aluminium nitride, aluminium oxide, polyimides (PI), polyethylene terephthalate or dimethyl silicone polymer；Into one
Step is preferably PI.
Step 2: depositing the N-type thermal electric film of given pattern in substrate after the pre-treatment；
Specifically by magnetron sputtering and the micro-machined technique of photoetching-removing, figure is carried out in substrate after the pre-treatment
Case high density deposition obtains the N-type thermal electric film with given pattern, and the N-type thermal electric film is particularly preferred as N-type-
Bi2Te3Base thermal electric film, the N-type-Bi2Te3Base thermal electric film with a thickness of 1 μm -20 μm, preferably with a thickness of 2 μm.
Step 3: being made annealing treatment to the N-type thermal electric film；
The annealing specifically: by the N-type thermal electric film in the case where temperature is 350 DEG C -400 DEG C and reducing atmosphere
Annealing 20-60 minutes obtains the high-performance N-type thermal electric film after making annealing treatment, the N-type thermal electric film after the annealing
Thermoelectricity capability gets a promotion, and the reducing atmosphere is the mixed atmosphere of argon gas and hydrogen.
Step 4: depositing the p-type thermal electric film of given pattern in substrate after the pre-treatment；
Specifically by magnetron sputtering and the micro-machined technique of photoetching-removing, figure is carried out in substrate after the pre-treatment
Case high density deposition obtains the p-type thermal electric film with given pattern, and the p-type thermal electric film is particularly preferred as p-type-
Sb2Te3Base thermal electric film, the p-type-Sb2Te3Base thermal electric film with a thickness of 1 μm -20 μm, preferably with a thickness of 2 μm.
N-type thermoelectric arm and adjacent p-type thermoelectric arm in the N-type thermal electric film form a pair of of thermocouple.
Step 5: depositing electricity in substrate after the pre-treatment by magnetron sputtering and the micro-machined technique of photoetching-removing
Very thin films；The depositing electrode film specifically:
By carrying out high density, height in the substrate of magnetron sputtering and the micro-machined technique of photoetching-removing after the pre-treatment
Reliable electrode film pattern preparation, prepares nickel layer pattern first and thermoelectric arm is connected, one layer of layers of copper, nickel are then prepared on nickel layer
Layer and layers of copper formed multilayer copper/nickel electrode film 7, the nickel layer of the electrode film directly with the thermoelectricity arm contact of thermocouple,
Contact resistance is reduced, the cohesive force between 7 pattern of electrode film and thermal electric film is improved.
The copper/nickel electrode film 7 thickness is greater than the thickness of p-type thermal electric film, the simultaneously greater than thickness of N-type thermal electric film
Degree.Preferably, for copper/nickel electrode film 7 with a thickness of 3 μm, the thickness of p-type thermal electric film and the thickness of N-type thermal electric film are 2
μm。
As shown in Figures 2 and 3, the pattern of the p-type thermal electric film 8 is circular ring shape, the pattern of N-type thermal electric film 9
It is circular ring shape, the thermoelectric arm of the p-type thermal electric film 8 and the thermoelectric arm of N-type thermal electric film 9 are handed in the position of anchor ring circumferential direction
It replaces, forms circular ring shape thermocouple pattern, such as Fig. 4, and all thermoelectric arms are connected by the copper/7 pattern of nickel electrode film.
Step 6: pasting absorption film or heat absorbing sheet in the hot end of all thermocouples, and with casting glue to the thermocouple, electricity
Very thin films 7 and absorption film 5 are packaged to form thermo-electric device.
As shown in Fig. 2, absorption film 5 is pasted in the hot end of the thermo-electric device 3, wherein the inner ring of circular loop pattern is heat
End, outer ring is cold end, and the absorption film 5 is circle, is pasted on the electrode film 7 in hot end, will accumulate in above absorption film 5
Intensity of illumination is converted into temperature.
The material of the casting glue can be dimethyl silicone polymer (PDMS), in embodiments of the present invention specifically can be with
Using KenseerTMSE901 casting glue.
The absorption film 5 rich siphon hotting mask rich using section hundred in Sichuan.
Step 7: the thermo-electric device with Fresnel Lenses, radiator structure and shell be assembled to form multi-functional
The power generation of high density thermal electric film and light intensity sensor part.
As shown in Figure 1, Fresnel Lenses 1 is arranged in the top of the shell 2, shell 2 is internally provided with radiator structure 4,
The thermo-electric device 3 is located at the upper surface of radiator structure 4.It is absorbed heat on the Fresnel Lenses 1 and thermo-electric device 3 by adjusting
The distance between film 5, the focal beam spot after passing light through Fresnel Lenses 1 are fallen on absorption film 5.
There is groove, the groove is designed according to the shape of cold end, the groove among the surface of the radiator structure 4
With the pattern fits of thermo-electric device 3, when thermo-electric device 3 is placed on radiator structure 4, the edge of the only described thermo-electric device 3
Thermocouple cold junction contacted with radiator structure 4, and all thermocouples and all pyrometer fire-ends are located in groove, do not tie with heat dissipation
Structure 4 contacts, and increases the temperature difference of cold and hot end.
Further, the radiator structure 4 is copper billet.
In use, Multifunction thermoelectric film power generation is exposed under illumination condition with light intensity sensor part,
Light is fallen on absorption film 5 by the focal beam spot after Fresnel Lenses 1, the size and shape of focal beam spot with 5 phase of absorption film
Together, focal beam spot is circle in the present embodiment, in the same size with round absorption film 5.Under intensity of illumination effect, absorption film 5
(hot end) temperature improves, and pyrometer fire-end temperature increases；According to Seebeck effect principle, correspondence can be generated between hot end and cold end
Electromotive force, and then generate output voltage, have power generation effect；Meanwhile output voltage can be acquired, according to output voltage and light
According to the corresponding relationship of intensity, the size of intensity of illumination can be calculated, has the function of light intensity sensing, realizes and turn intensity of illumination
It is changed to the output voltage convenient for acquisition and measurement.As shown in figure 3, the cold end is the figure of the edge electrodes film 7 of thermo-electric device 3
Case structure, intensity of illumination and highest stabilizing temperature are to correspond.
The theoretical output voltage V of multi-functional high density the thermal electric film power generation and light intensity sensor partCMeet as follows
Formula:
VC=n × (Sp-type-Sn-type)×ΔT
Wherein, the n in formula is the logarithm of thermocouple, Sp-typeAnd Sn-typeThe respectively Seebeck of p-type and N-type thermal electric film
Coefficient, Δ T are the temperature difference of cold and hot end.It is known that by taking the logarithm n for increasing thermocouple, improving p-type thermal electric film
With the Sai Beier coefficient S of N-type thermal electric filmp-typeAnd Sn-type, and increase cold and hot end temperature difference T can be used to enhance
Theoretical output voltage VC.Using the micro-machined technique of photoetching-removing, the phase done with generalling use the methods of printing, exposure mask at present
Than the density of thermocouple is much higher, i.e. p-type thermal electric film on the pretreated area of base of unit and N-type thermal electric film
Number of patterns is more.
In the present invention, miniature thin-film pattern is prepared by using this micro-processing technology of photoetching first, increases thermocouple
Logarithm, realize high density thermocouple；The performance of thermoelectric material is improved secondly by the method for annealing to improve p-type thermal electric film
With the Seebeck coefficient of N-type thermal electric film；It is absorbed finally by the light intensity for introducing 5 pairs of absorption film aggregations, heat is greatly improved
The heat absorption capacity at end；And Fresnel Lenses is introduced as light concentrating components, light is assembled.It is fluted by introducing Intermediate Gray
Radiator structure of the copper billet as thermo-electric device, only radiate to cold end, cold junction temperature reduced, to improve thermocouple both ends temperature
Difference.
In addition, the sensing capabilities of photo-sensing device are mainly to be determined by the thermal diffusion of thermo-electric device in the present invention, therefore
The thermoelectricity capability in senser element can be regulated and controled, adjusting means is carried out by the substrate of selection unlike material and thickness
The sensing capabilities of responsiveness and the speed of response.By realizing thin-film device in unlike material and thickness substrate deposition device
Flexible-hardness transformation, and the performance of sensor is regulated and controled.
Be illustrated in figure 5 with/without lower thermo-electric device generation of the present invention of illumination voltage and cold heat end temperature at any time
Change schematic diagram, (the optical power density 80mV/cm when there is illumination2), the voltage that thermo-electric device generates increases sharply, and is then in
It gradually rises, it is final to keep stablizing.Maximum stable output voltage is about 995mV；After illumination is removed, voltage declines suddenly, so
Afterwards slowly close to zero.Cyclically-varying with/without illumination also results in the cyclically-varying of output voltage, and in several weeks
Without there is any deterioration after phase；Cold heat end temperature is also at any time in cyclically-varying.
It is illustrated in figure 6 the voltage that thermo-electric device of the present invention generates under different optical power densities and changes with time and show
It is intended to, when there is illumination, voltage increase quickly, then gradually rises to stable value, and is able to maintain and stablizes 10 minutes；And
Voltage increases with the increase of optical power density.
Complex chart 5 and Fig. 6 can learn, highly sensitive, the Gao Zhun of the optical sensor of thin film thermoelectric device prepared by the present invention
True property, high reliability and periodicity.
The relationship signal being illustrated in figure 7 between the output voltage of thermo-electric device of the present invention and different optical power densities
Figure, responsiveness (RS) be evaluation sensor performance a key parameter, it be byIt provides, wherein
VOPIt is output voltage, G is incident optical power,It is effective coverage.In device architecture of the invention, the size in heat absorption area is
It is identical, therefore can be by RS=VOP/ G is defined as responsiveness.As can be seen from Figure 7: stabilizing the output voltage close with optical power
Degree shows very strong linear relationship, is obtained by linear fit, responsiveness reaches 12.5Vcm2The superelevation value of/W.Particularly,
1.25V will be reached under a standard sunlight conditions by calculating stable output voltage, show there is Gao Xiang in optical detection
Response.
Thermo-electric device of the present invention is illustrated in figure 8 under different light application times, the output voltage of generation is with optical power density
Variation schematic diagram, it is as shown in table 1 below to pass through the linear fit result table that Fig. 7 and Fig. 8 carries out linear fit.
1 linear fit result table of table
By table 1, it can be concluded that, output voltage increases with the increase of testing time.However, when starting, the journey of fitting
Spend (R high not enough2< 0.99), when the time being longer than 10s, output voltage and time graph show perfect linear fit (R2>
0.999).Table 1 is listed in optical power density 20mW/cm2When output voltage calculated value and measured value.The thermo-electric device is in phase
To having under lower luminous intensity very high output voltage (tens of millivolts), and measurement error is about 5% (t=10s), while
When time of measuring is more than 10s, optical power density can be accurately measured.
Heat is converted by absorption film by light additionally, due in test process, then output electricity is generated by Seebeck effect
Pressure；Absorption film is not selective to the wave-length coverage of light, therefore is had compared to tradition based on photoelectric thermo-electric device
There is very wide response range.
The present invention not only increases thermal electric film power generation and the generating efficiency of light intensity sensor part, and it is creative will be hot
Electrical effect is applied to light-intensity test field；By introducing absorption film and concentration structure, so that the thermocouple two on thermo-electric device
The temperature difference at end increases and the structure of optimised devices, greatly enhances output voltage；After tested, obtained thermal electric film hair
The conversion efficiency of thermoelectric of electricity and light intensity sensor part is greatly improved；As light intensity sensor part have high output voltage,
The characteristics of high-responsivity, highly sensitive, high accuracy, high reliability and wide response range.The micro-energies such as environmental monitoring collect with
Sensory field has huge application potential.
According to the above description of this invention, so it is easy to understand that embodiment of the present invention can have a variety of variations.These
Variation is not viewed as deviating from the spirit and scope of the present invention, and is to those skilled in the art readily comprehensible
All such modifications, which are intended to, to be included in scope of the appended claims.
Claims (10)
1. a kind of preparation method of Multifunction thermoelectric film power generation and light intensity sensor part, it is characterised in that: utilize thermoelectric material
Solid interior carrier transport realizes that thermal energy is mutually converted with electric energy, by designing high density thermo-electric device, using magnetron sputtering
And the micro-machined technique of photoetching-removing, power output, Intensity response and the reliability of thermo-electric device are improved, to carry out ring
Thermal energy collecting power generation in border is sensed with active light intensity, and realizing has the dual function of thermo-electric generation and sensing, the preparation
Method specifically comprises the following steps:
Step 1: being pre-processed to substrate；
Step 2: by magnetron sputtering and the micro-machined technique of photoetching-removing, the specified figure of deposition in substrate after the pre-treatment
The N-type thermal electric film of case；
Step 3: being made annealing treatment to the N-type thermal electric film；
Step 4: by magnetron sputtering and the micro-machined technique of photoetching-removing, the specified figure of deposition in substrate after the pre-treatment
The p-type thermal electric film of case；
The p-type thermoelectric arm in N-type thermoelectric arm and adjacent p-type thermal electric film in the N-type thermal electric film forms thermocouple；
Step 5: by magnetron sputtering and the micro-machined technique of photoetching-removing, deposition of copper/nickel in substrate after the pre-treatment
Electrode film；
Prepare nickel layer pattern first thermoelectric arm in thermocouple is connected, then on nickel layer pattern prepare one layer of layers of copper, nickel layer and
Copper/nickel electrode Thinfilm pattern of layers of copper formation multilayer；
Step 6: pasting absorption film in the hot end of all thermocouples；
And it encapsulates the thermocouple, electrode film and absorption film to form thermo-electric device with casting glue；
Step 7: carrying out the thermo-electric device and Fresnel Lenses, radiator structure and shell to be assembled to form Multifunction thermoelectric
Film power generation and light intensity sensor part.
2. the preparation method of Multifunction thermoelectric film power generation and light intensity sensor part as described in claim 1, which is characterized in that institute
It states pretreatment to clean substrate specifically by ultrasound and plasma, obtains pretreated substrate.
3. the preparation method of Multifunction thermoelectric film power generation and light intensity sensor part as described in claim 1, which is characterized in that institute
The material for stating substrate is glass, quartz, aluminium nitride, aluminium oxide, polyimides, polyethylene terephthalate or poly dimethyl
Siloxanes.
4. the preparation method of Multifunction thermoelectric film power generation and light intensity sensor part as described in claim 1, which is characterized in that step
The rapid two N-type thermal electric film is specially N-type-Bi2Te3Base thermal electric film, the N-type-Bi2Te3Base thermal electric film with a thickness of
1μm-20μm。
5. the preparation method of Multifunction thermoelectric film power generation and light intensity sensor part as described in claim 1, which is characterized in that institute
Stating annealing is specially that the N-type thermal electric film is annealed 20-60 points in the case where temperature is 350-400 DEG C and reducing atmosphere
Clock, the N-type thermal electric film after obtaining annealing.
6. the preparation method of Multifunction thermoelectric film power generation and light intensity sensor part as described in claim 1, which is characterized in that step
The rapid four p-type thermal electric film is specially p-type-Sb2Te3Base thermal electric film, the p-type-Sb2Te3Base thermal electric film with a thickness of
1μm-20μm。
7. the preparation method of Multifunction thermoelectric film power generation and light intensity sensor part as described in claim 1, which is characterized in that step
Copper described in rapid five/nickel electrode film thickness is greater than the thickness of p-type thermal electric film, the simultaneously greater than thickness of N-type thermal electric film.
8. the preparation method of Multifunction thermoelectric film power generation and light intensity sensor part as described in claim 1, which is characterized in that institute
The fixed Fresnel Lenses in the top of the shell stated, by adjust on the Fresnel Lenses and thermo-electric device between absorption film away from
From the focal beam spot after passing light through Fresnel Lenses is fallen on absorption film, and radiator structure, the thermoelectricity is arranged in enclosure interior
Device is fixed on radiator structure upper surface.
9. the preparation method of Multifunction thermoelectric film power generation and light intensity sensor part as claimed in claim 8, which is characterized in that institute
It is identical as the shape and size of absorption film to state focal beam spot.
10. the preparation method of Multifunction thermoelectric film power generation and light intensity sensor part as described in claim 1, which is characterized in that
There are groove, the pattern fits of the groove and thermo-electric device, when thermo-electric device is set among the surface of the radiator structure
When on radiator structure, the cold end at the edge of the only described thermo-electric device is contacted with radiator structure, and hot end and thermocouple part
It is not contacted with radiator structure.
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| CN201810821846.XA CN109087989B (en) | 2018-07-24 | 2018-07-24 | Preparation method of multifunctional thermoelectric thin film power generation and light intensity sensing device |
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| CN110289348A (en) * | 2019-04-24 | 2019-09-27 | 电子科技大学 | A kind of the ink printing-type preparation method and its structure of light auxiliary thermo-electric device |
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| CN111446358A (en) * | 2020-05-22 | 2020-07-24 | 北京航空航天大学杭州创新研究院 | High-precision rapid thin-film thermoelectric device based on pulse laser ablation and preparation method thereof |
| CN112333978A (en) * | 2020-10-19 | 2021-02-05 | Oppo广东移动通信有限公司 | Heat dissipation assembly, electronic equipment and heat dissipation control method |
| CN112510142A (en) * | 2021-02-05 | 2021-03-16 | 南京卓永创光电科技有限公司 | Boron alkene-based photo-thermal-electric conversion thin film device and preparation method thereof |
| CN113248767A (en) * | 2021-05-11 | 2021-08-13 | 苏州鸿凌达电子科技有限公司 | Bending-resistant thermoelectric thin film and preparation method thereof |
| CN114122540A (en) * | 2021-11-15 | 2022-03-01 | 电子科技大学 | Temperature detector, preparation method thereof and lithium battery structure combination |
| CN114199372A (en) * | 2021-12-03 | 2022-03-18 | 大连理工大学 | Self-supporting flexible optical power strength testing device and preparation method thereof |
| CN114464725A (en) * | 2022-02-07 | 2022-05-10 | 中国航空发动机研究院 | Thermoelectric film, manufacturing method thereof and thermoelectric device |
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| CN110289348B (en) * | 2019-04-24 | 2021-05-14 | 电子科技大学 | Printing ink printing type preparation method and structure of photo-assisted thermoelectric device |
| CN110289348A (en) * | 2019-04-24 | 2019-09-27 | 电子科技大学 | A kind of the ink printing-type preparation method and its structure of light auxiliary thermo-electric device |
| CN111106230A (en) * | 2019-12-31 | 2020-05-05 | 中国电子科技集团公司第十八研究所 | Micro-temperature difference power generation device with planar radiation structure |
| CN111446358A (en) * | 2020-05-22 | 2020-07-24 | 北京航空航天大学杭州创新研究院 | High-precision rapid thin-film thermoelectric device based on pulse laser ablation and preparation method thereof |
| CN111446358B (en) * | 2020-05-22 | 2022-08-05 | 北京航空航天大学杭州创新研究院 | High-precision rapid thin-film thermoelectric device based on pulse laser ablation and preparation method thereof |
| CN112333978A (en) * | 2020-10-19 | 2021-02-05 | Oppo广东移动通信有限公司 | Heat dissipation assembly, electronic equipment and heat dissipation control method |
| CN112333978B (en) * | 2020-10-19 | 2023-06-06 | Oppo广东移动通信有限公司 | Heat dissipation assembly, electronic equipment and heat dissipation control method |
| CN112510142B (en) * | 2021-02-05 | 2021-05-04 | 南京卓永创光电科技有限公司 | Boron alkene-based photo-thermal-electric conversion thin film device and preparation method thereof |
| CN112510142A (en) * | 2021-02-05 | 2021-03-16 | 南京卓永创光电科技有限公司 | Boron alkene-based photo-thermal-electric conversion thin film device and preparation method thereof |
| CN113248767A (en) * | 2021-05-11 | 2021-08-13 | 苏州鸿凌达电子科技有限公司 | Bending-resistant thermoelectric thin film and preparation method thereof |
| CN113248767B (en) * | 2021-05-11 | 2022-01-18 | 苏州鸿凌达电子科技有限公司 | Bending-resistant thermoelectric thin film and preparation method thereof |
| CN114122540A (en) * | 2021-11-15 | 2022-03-01 | 电子科技大学 | Temperature detector, preparation method thereof and lithium battery structure combination |
| CN114199372A (en) * | 2021-12-03 | 2022-03-18 | 大连理工大学 | Self-supporting flexible optical power strength testing device and preparation method thereof |
| WO2022068976A3 (en) * | 2021-12-03 | 2022-10-13 | 大连理工大学 | Self-supporting, flexible, optical power intensity testing device and preparation method therefor |
| CN114464725A (en) * | 2022-02-07 | 2022-05-10 | 中国航空发动机研究院 | Thermoelectric film, manufacturing method thereof and thermoelectric device |
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