CN111106230A - Micro-temperature difference power generation device with planar radiation structure - Google Patents
Micro-temperature difference power generation device with planar radiation structure Download PDFInfo
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- CN111106230A CN111106230A CN201911406015.7A CN201911406015A CN111106230A CN 111106230 A CN111106230 A CN 111106230A CN 201911406015 A CN201911406015 A CN 201911406015A CN 111106230 A CN111106230 A CN 111106230A
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- 238000010248 power generation Methods 0.000 title claims abstract description 38
- 230000005855 radiation Effects 0.000 title claims abstract description 23
- 239000000178 monomer Substances 0.000 claims abstract description 18
- 238000005516 engineering process Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 230000010354 integration Effects 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 229910021389 graphene Inorganic materials 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000004377 microelectronic Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000004321 preservation Methods 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 238000005289 physical deposition Methods 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 3
- 230000026683 transduction Effects 0.000 description 3
- 238000010361 transduction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 230000008092 positive effect Effects 0.000 description 1
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- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
- H10N19/101—Multiple thermocouples connected in a cascade arrangement
Abstract
The invention belongs to the technical field of thermoelectric technology, and particularly relates to a planar radiation structure micro-thermoelectric power generation device. The power generation device has a radial integral structure, the center of the device is a square heat source area, and a plurality of pairs of thermoelectric monomers are uniformly distributed on the periphery of the heat source area; each pair of thermoelectric monomers comprises a hot end conducting layer, a cold end conducting layer and a P/N type thermoelectric element; the hot end conducting layer is arranged at the boundary of the heat source area; the cold end conducting layer and the hot end conducting layer are arranged at the edge of the whole power generation device in a corresponding mode; the hot end conducting layer is connected with one end of the P-type thermoelectric element and one end of the N-type thermoelectric element at the hot end; the cold end conducting layer is connected with the other ends of the P-type thermoelectric element and the N-type thermoelectric element at the cold end; each pair of adjacent thermoelectric monomers are connected in series. The invention can obviously improve the working temperature difference of the device; the high heat conduction layer and the low heat conduction layer are respectively designed on the upper surface and the lower surface of a position point in contact with a heat source, so that the direction of heat flow is effectively controlled, and the effective conversion of heat is realized to the maximum extent.
Description
Technical Field
The invention belongs to the technical field of thermoelectric technology, and particularly relates to a planar radiation structure micro-thermoelectric power generation device.
Background
With the rapid development of intelligent electronic products, a new generation of intelligent micro-nano electronic systems represented by wearable and implantable types urgently needs to develop a micro-watt-milliwatt self-powered technology. The thermoelectric power generation technology can utilize the temperature difference between the body temperature and the surrounding environment to generate power, the miniaturized energy conversion device is expected to become an effective solution of the portable intelligent electronic device self-power supply technology, and the wireless endurance of the electronic device can be realized due to the characteristic of uninterrupted continuous output of the device. Therefore, the application value of the micro-temperature difference power generation technology in the intelligent micro-nano electronic equipment draws high attention of the scientific community.
The research on the thin film thermoelectric cell is mostly carried out internationally in the United states and Germany, and related universities and scientific research institutions carry out related research works at home. At present, the domestic reported micro-temperature difference technology mostly focuses on the preparation of thin film materials, and the micro-temperature difference power generation devices are few. Most of micro devices reported at home and abroad are of laminated structures, heat flow is conducted from top to bottom, a device cannot establish a large working temperature difference (only a few K) due to a thin transduction micro area, and the output performance is low; the substrate is mostly rigid, and the degree of adhesion with the surface of the special-shaped heat source is lower.
Disclosure of Invention
Aiming at the technical problems in the prior art, the invention provides a planar radiation structure micro-temperature difference power generation device based on the design concept of large temperature difference of the device.
In order to achieve the purpose, the invention adopts the following technical scheme:
a plane radiation structure micro-temperature difference power generation device is radial in overall structure, a square heat source area is arranged in the center of the device, and a plurality of pairs of thermoelectric monomers are uniformly distributed on the periphery of the heat source area; each pair of thermoelectric monomers comprises a hot end conducting layer, a cold end conducting layer and a P/N type thermoelectric element; the hot end conducting layer is arranged at the boundary of the heat source area; the cold end conducting layer and the hot end conducting layer are arranged at the edge of the whole power generation device in a corresponding mode; the hot end conducting layer is connected with one end of the P-type thermoelectric element and one end of the N-type thermoelectric element at the hot end; the cold end conducting layer is connected with the other ends of the P-type thermoelectric element and the N-type thermoelectric element at the cold end; each pair of adjacent thermoelectric monomers are connected in series.
Further, when the heat source device is used, the back surface of the heat source area is in contact with the heat source, and the area of the heat source area is determined by the size of the heat source, so that the heat can be efficiently utilized to the maximum extent.
Furthermore, a high-heat-resistance ceramic layer is manufactured on the front side of the heat source area through a physical deposition method, and a super-heat-conduction graphene film is manufactured on the back side of the heat source area, so that heat flow is transmitted in a plane in a radiation mode, and heat flow loss in the vertical direction (between planes) is avoided.
Further, the power generation device is manufactured by selecting a rigid or flexible substrate, the rigid substrate is made of high-insulation silicon with an oxide layer, and the flexible substrate is made of polyimide with the thickness of less than 50 micrometers.
Furthermore, the thicknesses of the materials of the hot end conducting layer, the P/N type thermoelectric element and the cold end conducting layer are controlled to be 5-30 microns, and the thickness of the film can be selected and limited according to the temperature difference requirement of practical application.
Furthermore, the conducting layer at the cold end and the hot end is made of any one of Mo, Ti, Au and Al, and the metals have good chemical stability and conductivity.
Furthermore, the thermoelectric monomer is a P/N type heavily doped BiTe material which has excellent performance and can meet the requirement of the working temperature of a device.
Furthermore, the size of the heat source area is 0.3mm multiplied by 0.3mm, the thicknesses of the hot end conducting layer and the cold end conducting layer are both 20 micrometers, the cross section size of the P/N type thermoelectric element is 20 micrometers multiplied by 30 micrometers, and the length of the P/N type thermoelectric element is 0.5 mm.
Furthermore, the power generation device comprises 24 pairs of thermoelectric monomers all around.
Furthermore, the power generation device adopts the technology of combining unbalanced magnetron sputtering and microelectronic photoetching to realize the manufacturing integration of the radial battery, and the whole device is subjected to heat treatment after the integration, wherein the heat treatment temperature is 280-380 ℃, the temperature rise speed is 1-5 ℃/s, and the heat preservation time is 20-40 min.
The invention has the advantages and positive effects that:
the planar radiation structure micro-temperature difference power generation device creatively provides a product design of a micro quasi-two-dimensional micro-temperature difference device of a planar radiation structure, and the cold end conducting layer and the hot end conducting layer establish working temperature difference in a plane, so that heat flow is transmitted in the plane in a radiation manner, and heat flow loss in the vertical direction (between planes) is avoided. The working temperature difference of the device can be obviously improved by manufacturing a micro-temperature difference transduction micro-area with a large height-to-section area ratio; the high heat conduction layer and the low heat conduction layer are respectively designed on the upper surface and the lower surface of a position point in contact with a heat source, so that the direction of heat flow is effectively controlled, and the effective conversion of heat is realized to the maximum extent.
Description of the drawings:
fig. 1 is a schematic structural diagram of a planar radiation structure micro-temperature difference power generation device in a preferred embodiment of the invention.
Wherein: 1. a heat source region; 2. a cold-side conductive layer; 3. a hot side conductive layer; 4. a P-type thermoelectric element; 5. an N-type thermoelectric element.
Detailed Description
The drawings in the embodiments of the invention will be combined; the technical scheme in the embodiment of the invention is clearly and completely described; obviously; the described embodiments are only some of the embodiments of the invention; rather than all embodiments. Based on the embodiments of the invention; all other embodiments obtained by a person skilled in the art without making any inventive step; all fall within the scope of protection of the present invention.
As shown in figure 1, the invention discloses a plane radiation structure micro-temperature difference power generation device, the whole structure of the power generation device is radial, the center of the device is a square heat source area 1, and a plurality of pairs of thermoelectric monomers are uniformly distributed on the periphery of the heat source area 1; each pair of thermoelectric monomers comprises a cold end conducting layer 2, a hot end conducting layer 3 and a P/N type thermoelectric element; the hot end conductive layer 3 is arranged at the boundary (cold end) of the heat source area 1; the cold end conducting layer 2 and the hot end conducting layer 3 are arranged at the edge (hot end) of the whole power generation device in a relative mode; the hot end conducting layer 3 is connected with one end of the P-type thermoelectric element 4 and one end of the N-type thermoelectric element 5 at the hot end; the cold end conducting layer 2 is connected with the other ends of the P-type thermoelectric element 4 and the N-type thermoelectric element 5 at the cold end; each pair of adjacent thermoelectric monomers are connected in series; thus, the P-type thermoelectric element 4 and the N-type thermoelectric element 5 form a plane radiation-shaped structure, and the two establish working temperature difference in a plane, so that heat flow is radiated and transmitted in the plane, and heat flow loss in the vertical direction (between the planes) is avoided. The length of the element can be freely adjusted according to the position and the requirement in practical use, and can be designed to be millimeter magnitude so as to establish larger working temperature difference.
Preferably, the power generation device adopts the technology of combining unbalanced magnetron sputtering and microelectronic photoetching to realize the manufacturing integration of the radial battery, and the whole device is subjected to heat treatment after the integration, wherein the heat treatment temperature is 280-380 ℃, the temperature rise speed is 1-5 ℃/s, and the heat preservation time is 20-40 min.
Preferably, when in use, the back surface of the heat source area is in contact with the heat source, so that the area of the area can be determined according to the size of the heat source; in addition, in order to realize the high-efficiency transmission of heat flow in the surface and prevent the heat loss between the surfaces as much as possible, the invention uses a physical deposition method to manufacture a high-heat-resistance ceramic layer (ZnO, ZrO) on the front surface of a heat source area2、AlN、Al2O3And the like) and manufacturing the super heat conduction graphene film on the back surface.
Preferably, the power generating device is made of a rigid or flexible substrate, wherein: the rigid substrate is preferably high-insulation silicon with an oxide layer, and the flexible substrate is preferably polyimide with the thickness of less than 50 microns;
preferably, the thicknesses of the materials of the hot-end conducting layer, the P/N type thermoelectric element and the cold-end conducting layer are controlled to be 5-30 micrometers and are arranged in sequence from inside to outside;
preferably, the conducting layer materials of the cold end and the hot end of the invention are selected from Mo, Ti, Au, Al and the like, and the thermoelectric monomer is a P/N type heavily doped BiTe material.
Example 1
A planar radiation structure micro-temperature difference power generation device adopts the technology of combining unbalanced magnetron sputtering and micro-electronic photoetching to realize the manufacturing integration of a radial battery, and the whole device is subjected to heat treatment after the integration, wherein the heat treatment temperature is 300 ℃, the temperature rise speed is 1 ℃/s, and the heat preservation time is 20 min. The back of the heat source region 1 is a graphene film, and the front of the heat source region is a ZnO ceramic layer; the size of a heat source area is 0.3mm multiplied by 0.3mm, the periphery of the power generation device totally comprises 24 pairs of P-N BiTe base transduction thermoelectric monomers, the thicknesses of the cold end conducting layer 2 and the hot end conducting layer are both 20 mu m, the cross section size of the P/N type thermoelectric element is 20 mu m multiplied by 30 mu m, and the length is 0.5 mm. The test shows that the temperature difference of the device is 17K, the open-circuit voltage is close to 0.063V, and the maximum output power is 1.98 muW.
The embodiments of the present invention have been described in detail, but the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (10)
1. The utility model provides a little temperature difference of plane radiation structure power generation device which characterized in that: the power generation device has a radial integral structure, the center of the device is a square heat source area, and a plurality of pairs of thermoelectric monomers are uniformly distributed on the periphery of the heat source area; each pair of thermoelectric monomers comprises a hot end conducting layer, a cold end conducting layer and a P/N type thermoelectric element; the hot end conducting layer is arranged at the boundary of the heat source area; the cold end conducting layer and the hot end conducting layer are arranged at the edge of the whole power generation device in a corresponding mode; the hot end conducting layer is connected with one end of the P-type thermoelectric element and one end of the N-type thermoelectric element at the hot end; the cold end conducting layer is connected with the other ends of the P-type thermoelectric element and the N-type thermoelectric element at the cold end; each pair of adjacent thermoelectric monomers are connected in series.
2. The planar radiation structure micro-thermoelectric power generation device according to claim 1, wherein: when the heat source device is used, the back of the heat source area is in contact with a heat source, and the area of the heat source area is determined by the size of the heat source.
3. The planar radiation structure micro-thermoelectric power generation device according to claim 1, wherein: and manufacturing a high-heat-resistance ceramic layer on the front side of the heat source area and manufacturing a super-heat-conduction graphene film on the back side of the heat source area by a physical deposition method.
4. The planar radiation structure micro-thermoelectric power generation device according to claim 1, wherein: the power generation device is made of a rigid or flexible substrate, the rigid substrate is made of high-insulation silicon with an oxide layer, and the flexible substrate is polyimide with the thickness of less than 50 microns.
5. The planar radiation structure micro-thermoelectric power generation device according to claim 1, wherein: the material thickness of the hot end conducting layer, the P/N type thermoelectric element and the cold end conducting layer is controlled to be 5-30 mu m.
6. The planar radiation structure micro-thermoelectric power generation device according to claim 1, wherein: the conducting layer material of the cold end and the hot end is any one of Mo, Ti, Au and Al.
7. The planar radiation structure micro-thermoelectric power generation device according to claim 1, wherein: the thermoelectric monomer is a P/N type heavily doped BiTe material.
8. The planar radiation structure micro-thermoelectric power generation device according to claim 1, wherein: the size of the heat source area is 0.3mm multiplied by 0.3mm, the thicknesses of the hot end conducting layer and the cold end conducting layer are both 20 micrometers, the cross section size of the P/N type thermoelectric element is 20 micrometers multiplied by 30 micrometers, and the length of the P/N type thermoelectric element is 0.5 mm.
9. The planar radiation structure micro-thermoelectric power generation device according to claim 1, wherein: the power generation device comprises 24 pairs of thermoelectric monomers all around.
10. The planar radiation structure micro-differential temperature power generation device according to any one of claims 1 to 9, wherein: the power generation device adopts the technology of combining unbalanced magnetron sputtering and microelectronic photoetching to realize the manufacturing integration of the radial battery; and after integration, the whole device is subjected to heat treatment at the temperature of 280-380 ℃, the heating rate of 1-5 ℃/s and the heat preservation time of 20-40 min.
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2019
- 2019-12-31 CN CN201911406015.7A patent/CN111106230A/en active Pending
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|---|---|---|---|---|
| US20110155202A1 (en) * | 2008-09-18 | 2011-06-30 | University Of Florida Research Foundation, Inc. | Miniature Thermoelectric Power Generator |
| JP2012212838A (en) * | 2011-03-23 | 2012-11-01 | National Institute Of Advanced Industrial & Technology | Thermoelectric thin film device |
| JP2013062370A (en) * | 2011-09-13 | 2013-04-04 | Daikin Ind Ltd | Planar thin-film thermoelectric module |
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