CN109036487B - Multistage optical memory based on short-channel organic transistor and preparation method thereof - Google Patents
Multistage optical memory based on short-channel organic transistor and preparation method thereof Download PDFInfo
- Publication number
- CN109036487B CN109036487B CN201810806368.5A CN201810806368A CN109036487B CN 109036487 B CN109036487 B CN 109036487B CN 201810806368 A CN201810806368 A CN 201810806368A CN 109036487 B CN109036487 B CN 109036487B
- Authority
- CN
- China
- Prior art keywords
- organic
- source electrode
- electrode
- thickness
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
- G11C13/041—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using photochromic storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
Abstract
The invention relates to a multistage optical memory based on a short-channel organic transistor and a preparation method thereof, wherein the multistage optical memory of the short-channel organic transistor comprises a substrate, a grid electrode, a charge blocking layer, a floating gate layer, a tunneling layer, a net-shaped source electrode, a source contact electrode, an organic semiconductor layer and a drain electrode which are arranged in a stacked mode; the mesh source electrode, the organic semiconductor layer and the drain electrode form a sandwich stack structure, the overlapping area of the mesh source electrode and the drain electrode is the effective channel area of the device, the thickness of the organic semiconductor layer is the channel length of the device, and the preparation of the short-channel organic transistor can be realized by controlling the thickness of the organic semiconductor layer; the preparation method of the multistage optical memory based on the short-channel organic transistor not only improves the driving capability and the response speed of the device, but also improves the storage capacity of the device, has great application value in flexibility, and provides reference for the application of the future memory device.
Description
Technical Field
The invention relates to the field of organic photoelectric materials, in particular to a multistage optical memory based on a short-channel organic transistor and a preparation method thereof.
Background
With the rapid development of organic electronic technology, its application in the field of new consumer electronics is also continuously developing. The floating gate type organic transistor type memory plays an important role in an organic electronic device as a basic element in the organic electronic device. Among the numerous types of organic memories, the floating gate type organic transistor type memory has many unique advantages such as its working mechanism is perfect, lossless reading, stable data retention capability, ultra-high storage density, structure compatibility with integrated circuits, and the like. In a floating gate type organic transistor type memory, the shift of the threshold voltage of the transistor is controlled by applying write and erase voltages, resulting in the device exhibiting on and off states, which correspond to "1" and "0" in the logic circuit, respectively. The magnitude of the threshold voltage drift after the application of the write and erase voltages is called the memory window, the ratio of the on-state and off-state currents is called the memory ratio, the stability of the on-state and off-state currents of the device with the increase of the number of cycles is called the endurance characteristic, and the stability of the threshold voltage (or the on-state and off-state currents) of the device with the change of time is called the retention characteristic; the memory window, memory ratio, endurance characteristic and retention characteristic are important performance characteristics of the nonvolatile floating gate organic transistor type memory. Over the past, a great deal of research has been directed to finding floating gate materials with greater charge trapping capabilities, including metal nanoparticles, semiconductor nanoparticles, small molecules, quantum dots, and carbon materials. However, the driving capability and operating speed of the device are very important performance parameters of the floating gate organic transistor type memory and few researches are carried out. Particularly, with the rapid development of organic electronic devices, the driving capability of a common organic nonvolatile floating gate transistor type memory is not sufficient to meet the development requirement of organic electronics, and the further development of organic electronic technology is hindered. Meanwhile, as the size of the device is smaller and smaller, the requirement on the integration level of the basic element is higher and higher, and the integration of the device is more and more difficult due to the current accuracy limitation of the photoetching equipment and the like. Therefore, in order to solve these problems, it is necessary to design a suitable device structure to improve the driving capability and operating speed of the device, while increasing the storage capacity of a single memory device.
Disclosure of Invention
The invention aims to provide a preparation method of a multistage optical memory based on a short-channel organic transistor, which overcomes the defects in the prior art.
In order to achieve the purpose, the technical scheme of the invention is as follows: the multistage optical memory based on the short-channel organic transistor comprises a substrate, a grid electrode, a charge blocking layer, a floating grid layer, a tunneling layer, a net-shaped source electrode, a source electrode contact electrode, an organic semiconductor layer and a drain electrode which are arranged in a stacked mode; the organic semiconductor layer and the source electrode contact electrode are arranged on the surface of the reticular source electrode, the drain electrode is arranged on the organic semiconductor layer, the reticular source electrode, the organic semiconductor layer and the drain electrode on the reticular source electrode form a sandwich stack structure, the overlapping region of the reticular source electrode and the drain electrode is the effective channel area of the device, the thickness of the organic semiconductor layer is the channel length of the device, and the preparation of the short-channel organic transistor can be realized by controlling the thickness of the organic semiconductor layer; and writing the device by adopting illumination with different wavelengths according to different absorption capacities of the organic semiconductor layer to different wavelengths of light to realize multi-level storage of the device.
In an embodiment of the present invention, the substrate may be a rigid substrate or a flexible substrate.
In one embodiment of the invention, the gate material is gold, silver or aluminum, and is prepared by a thermal evaporation method; or indium tin oxide prepared by sputtering, and the thickness is 20 nm to 150 nm.
In an embodiment of the invention, the charge blocking layer material is an insulating oxide material, and is prepared by atomic layer deposition, and the thickness of the charge blocking layer material is 30 nm to 150 nm.
In an embodiment of the present invention, the floating gate layer is an organic insulating polymer film doped with a quantum dot material, and the adopted material is formed by mixing a quantum dot solution and an organic insulating polymer solution according to a preset ratio, that is: dissolving an organic insulating polymer material in an organic solvent, and obtaining an organic insulating polymer solution after the organic insulating polymer material is completely dissolved; dissolving a quantum dot material in a solvent, and obtaining a quantum dot solution after complete dissolution; mixing the organic insulating polymer solution and the quantum dot solution according to a preset proportion; the solvent of the quantum dot solution and the organic solvent of the organic insulating polymer solution are mutually soluble, and the solvent and the organic solvent can be the same or different; the organic insulating polymer film doped with the quantum dot material is prepared by spin coating, blade coating or printing, and has a thickness of 80 nm to 120 nm.
In an embodiment of the invention, the tunneling layer is an insulating oxide thin film, and is prepared by atomic layer deposition, and the thickness is 2 nm to 10 nm.
In one embodiment of the invention, the mesh source is a nano material capable of forming a mesh structure, and is prepared by spin coating, blade coating or printing; the source electrode contact electrode material is gold, silver or aluminum, is prepared in a thermal evaporation mode, and has a thickness of 20 nm to 80 nm.
In an embodiment of the present invention, the organic semiconductor layer is made of organic small molecules, organic polymer materials or a mixture of organic small molecules and organic polymer materials capable of absorbing light with a wavelength of 400 nm to 850 nm, and is prepared by spin coating, blade coating or printing, and the thickness of the organic semiconductor layer is 40 nm to 160 nm; the drain electrode of the organic material is an indium tin oxide transparent electrode and is prepared in a sputtering mode, the thickness of the electrode is 20 nm to 80 nm, and the electrode can also be a silver nanowire mesh electrode and is prepared in a spin coating, blade coating or printing mode.
In an embodiment of the present invention, the short-channel organic transistor-based multi-level optical memory is prepared by the following steps:
s1: preparing a cleaned substrate, wherein the substrate can be a rigid substrate or a flexible substrate;
s2: preparing a grid on the substrate through a mask plate by adopting a thermal evaporation or sputtering mode;
s3: preparing a charge blocking layer on the grid electrode in an atomic layer deposition mode;
s4: dissolving an organic insulating polymer material in an organic solvent, and obtaining an organic insulating polymer solution after complete dissolution;
s5: dissolving a quantum dot material in a solvent, and obtaining a quantum dot solution after complete dissolution;
s6: mixing the organic insulating polymer solution and the quantum dot solution according to a preset proportion to obtain a floating gate layer material;
s7: after the mixture is completely mixed, preparing a floating gate layer on the charge blocking layer in a spin coating, blade coating or printing mode;
s8: preparing a tunneling layer on the floating gate layer by adopting an atomic layer deposition mode;
s9: preparing a mesh source electrode on the tunneling layer in a spin coating, blade coating or printing mode;
s10: preparing a source electrode contact electrode on the mesh source electrode through a mask plate by adopting a thermal evaporation mode;
s11: dissolving an organic material in another organic solvent, and preparing the organic semiconductor layer on the mesh-shaped source electrode in a spin coating, blade coating or printing mode after the organic material is completely dissolved;
s12: and preparing the drain electrode on the organic semiconductor layer by adopting a sputtering, spin coating, blade coating or printing mode.
In an embodiment of the present invention, the method for manufacturing a multi-level optical memory based on a short-channel organic transistor is characterized in that: in the step S6, in the mixed solution of the organic insulating polymer and the quantum dots, the mass percentage of the quantum dots is 1% to 10%; in the steps S3 and S8, the temperature of the atomic layer deposition is 160 ℃ to 200 ℃, and the deposition speed is 0.09 nm/S to 0.12 nm/S; in step S9, the size of the holes of the mesh-shaped source is 100 nm to 10 um.
Compared with the prior art, the invention has the following beneficial effects:
the ultrashort channel length (nanometer level) of the invention provides ultrahigh current density and rapid response speed of the device, and excitons generated under illumination can be rapidly separated, so that the photoresponse of the device is improved, and the application of the device in the aspect of optical storage is expanded. The sandwich stack structure specially arranged in the device enables current to be vertically transmitted to the drain electrode from the mesh source electrode below through the organic semiconductor layer, and the vertical direction current transmission mode can effectively avoid the influence of a transverse crack generated in the bending process on current transmission, and is very suitable for being applied to a flexible device. And the ultrashort channel length enables a current carrier to be quickly transmitted from the source electrode to the drain electrode, so that the on-state current density and the operation speed of the device are improved, the problems of low current density and slow response of the device caused by low mobility of an organic semiconductor material are effectively solved, and the driving capability and the operation speed of the device are improved. In an ultrashort channel, excitons generated by the organic semiconductor layer under illumination can be quickly separated, and according to different absorption capacities of the device on different wavelengths of light, multistage storage of the device under the illumination condition can be realized, and the storage capacity of the device is improved. The multistage optical memory based on the short-channel organic transistor not only has strong driving capability and high operation speed, but also has high storage capacity of a single device, and promotes the application of the device in an integrated circuit.
Drawings
Fig. 1 is a schematic structural diagram of a short-channel organic transistor-based multilevel optical memory prepared in embodiment 1 of the present invention, wherein: 100 is a substrate, 110 is a gate, 120 is a charge blocking layer, 130 is a floating gate layer, 140 is a quantum dot, 150 is a tunneling layer, 160 is a mesh source, 170 is a source contact electrode, 180 is an organic semiconductor layer, 190 is a drain, and 200 is an irradiation light source.
FIG. 2 is the electrical transfer characteristic curves of a multi-level optical memory based on short-channel organic transistors, prepared in example 1 of the present invention, under different lighting conditions.
Fig. 3 is a graph showing the endurance curves of a multi-level optical memory based on a short-channel organic transistor prepared in example 1 of the present invention.
Fig. 4 is a retention characteristic curve of a multi-level optical memory based on a short-channel organic transistor prepared in example 1 of the present invention.
Detailed Description
The technical scheme of the invention is specifically explained below with reference to the accompanying drawings.
The invention provides a preparation method of a multistage optical memory based on a short-channel organic transistor, and provides a multistage optical memory based on a short-channel organic transistor, wherein the multistage optical memory of the short-channel organic transistor sequentially comprises a substrate, a charge blocking layer, a floating gate layer, a tunneling layer, a mesh source electrode, a source electrode contact electrode, an organic semiconductor layer and a drain electrode from top to bottom; the mesh source electrode, the organic semiconductor layer and the drain electrode on the mesh source electrode form a sandwich stack structure, the overlapping area of the mesh source electrode and the drain electrode is the effective channel area of the device, the thickness of the organic semiconductor layer is the channel length of the device, and the preparation of the short-channel organic transistor can be realized by controlling the thickness of the organic semiconductor layer. And writing the device by adopting illumination with different wavelengths according to different absorption capacities of the organic semiconductor layer to different wavelengths of light to realize multi-level storage of the device.
Further, in this embodiment, the substrate may be a rigid substrate or a flexible substrate.
Further, in this embodiment, the gate material is gold, silver, or aluminum, and is prepared by a thermal evaporation method; or indium tin oxide prepared by sputtering, and the thickness is 20 nm to 150 nm.
Further, in this embodiment, the charge blocking layer material is an insulating oxide material, and is prepared by atomic layer deposition, and the thickness of the charge blocking layer material is 30 nm to 150 nm.
Further, in this embodiment, the floating gate layer is an organic insulating polymer film doped with a quantum dot material, and the adopted material is formed by mixing a quantum dot solution and an organic insulating polymer solution according to a preset ratio, that is: dissolving an organic insulating polymer material in an organic solvent, and obtaining an organic insulating polymer solution after the organic insulating polymer material is completely dissolved; dissolving a quantum dot material in a solvent, and obtaining a quantum dot solution after complete dissolution; mixing the organic insulating polymer solution and the quantum dot solution according to a preset proportion; the solvent of the quantum dot solution and the organic solvent of the organic insulating polymer solution are mutually soluble, and the solvent and the organic solvent can be the same or different; the organic insulating polymer film doped with the quantum dot material is prepared by spin coating, blade coating or printing, and has a thickness of 80 nm to 120 nm.
Further, in this embodiment, the tunneling layer is an insulating oxide thin film, and is prepared by atomic layer deposition, and the thickness is 2 nm to 10 nm.
Further, in this embodiment, the mesh source is a nano material capable of forming a mesh structure, and is prepared by spin coating, blade coating or printing; the source electrode contact electrode material is gold, silver or aluminum, is prepared in a thermal evaporation mode, and has a thickness of 20 nm to 80 nm.
Further, in this embodiment, the organic semiconductor layer material is an organic small molecule, an organic polymer material or a mixture of the organic small molecule and the organic polymer material, which can absorb light with a wavelength of 400 nm to 850 nm, and is prepared by spin coating, blade coating or printing, and has a thickness of 40 nm to 160 nm; the drain electrode of the organic material is an indium tin oxide transparent electrode and is prepared in a sputtering mode, the thickness of the electrode is 20 nm to 80 nm, and the electrode can also be a silver nanowire mesh electrode and is prepared in a spin coating, blade coating or printing mode.
Further, in this embodiment, the short-channel organic transistor-based multilevel optical memory is prepared by the following steps:
s1: preparing a cleaned substrate, wherein the substrate can be a rigid substrate or a flexible substrate;
s2: preparing a grid on the substrate through a mask plate by adopting a thermal evaporation or sputtering mode;
s3: preparing a charge blocking layer on the grid electrode in an atomic layer deposition mode;
s4: dissolving an organic insulating polymer material in an organic solvent, and obtaining an organic insulating polymer solution after complete dissolution;
s5: dissolving a quantum dot material in a solvent, and obtaining a quantum dot solution after complete dissolution;
s6: mixing the organic insulating polymer solution and the quantum dot solution according to a preset proportion to obtain a floating gate layer material;
s7: after the mixture is completely mixed, preparing a floating gate layer on the charge blocking layer in a spin coating, blade coating or printing mode;
s8: preparing a tunneling layer on the floating gate layer by adopting an atomic layer deposition mode;
s9: preparing a mesh source electrode on the tunneling layer in a spin coating, blade coating or printing mode;
s10: preparing a source electrode contact electrode on the mesh source electrode through a mask plate by adopting a thermal evaporation mode;
s11: dissolving an organic material in another organic solvent, and preparing the organic semiconductor layer on the mesh-shaped source electrode in a spin coating, blade coating or printing mode after the organic material is completely dissolved;
s12: and preparing the drain electrode on the organic semiconductor layer by adopting a sputtering, spin coating, blade coating or printing mode.
Further, in this embodiment, in the step S6, in the mixed solution of the organic insulating polymer and the quantum dots, the mass percentage of the quantum dots is 1% to 10%; in the steps S3 and S8, the temperature of the atomic layer deposition is 160 ℃ to 200 ℃, and the deposition speed is 0.09 nm/S to 0.12 nm/S; in step S9, the size of the holes of the mesh-shaped source is 100 nm to 10 um.
The following are specific embodiments of the invention and should not be construed as limited to the embodiments set forth herein.
Where the reference figures are schematic illustrations of idealized embodiments of the present invention, the illustrated embodiments of the present invention should not be construed as limited to the particular shapes of regions illustrated in the figures. In the present embodiments, all are represented by rectangles, and the representation in the figures is schematic, but this should not be construed as limiting the scope of the invention.
The present invention will be described in further detail below with reference to specific examples.
Example 1
1) Glass substrates of about 1.5 cm by 1.5 cm were ultrasonically cleaned in acetone and isopropanol, respectively, for ten minutes, and then dried with nitrogen gas to serve as substrates.
2) A thermal evaporation mode is adopted, and a special mask plate is utilized to evaporate 100 nm of aluminum on a clean substrate to be used as a gate electrode.
3) And depositing an alumina film as a charge blocking layer on the grid electrode by adopting an atomic layer deposition mode, wherein the deposition temperature is 200 ℃, and the thickness of the obtained alumina film is 100 nm.
4) Dissolving an organic insulating polymer PVP in a propylene glycol monomethyl ether acetate solvent according to a ratio of 15 mg/ml, stirring at normal temperature for 48 hours to completely dissolve the PVP, dissolving CdSe/ZnS quantum dots in chloroform according to a ratio of 3 mg/ml, and completely mixing the PVP solution and the quantum dot solution which are completely dissolved in a volume ratio of 5: 2. The solution was used as a floating gate layer material and filtered through a filter plug having a diameter of 0.22 μm, and then spin-coated on the substrate obtained in step 3). The spin coating speed is firstly low at 600 rpm/min for 5 s, and then high at 2000 rpm/min for 30 s. And annealing for 2 h in the glove box after spin coating to obtain the floating gate layer film with the thickness of 80 nm.
5) Depositing an aluminum oxide film on the floating gate layer obtained in the step 4) by adopting an atomic layer deposition mode to be used as a tunneling layer, wherein the deposition temperature is 200 ℃, and the thickness of the obtained aluminum oxide film is 4 nm.
6) Dispersing silver nanowires in isopropanol solvent according to the proportion of 1 mg/ml, and preparing the solution serving as the reticular source electrode material on the tunneling layer obtained in the step 5) by adopting a spin coating mode. The spin coating speed was 2000 rpm/min for 60 s, followed by annealing at 100 ℃ for 1 min.
7) And (3) evaporating gold with the width of 200 mu m and the thickness of 50 nm on the reticular source electrode obtained in the step 6) by using a special mask plate in a thermal evaporation mode to serve as a source electrode contact electrode.
8) Dissolving a semiconductor polymer material PDVT-8 in a chloroform solvent according to the proportion of 10 mg/ml, and preparing the solution as an organic semiconductor layer material on the reticular source electrode obtained in the step 6) by adopting a spin coating mode. The spin coating speed is 1000 rpm/min, the time is 60 s, and then the annealing is carried out for 10 min at 150 ℃, so as to obtain the organic semiconductor layer film with the thickness of 120 nm.
9) The device was partially immersed in chloroform solvent to completely bubble away PDVT-8 on the source contact electrode, which was just exposed to be independent of PDVT-8.
10) And sputtering Indium Tin Oxide (ITO) with the width of 200 mu m and the thickness of 50 nm on the organic semiconductor layer obtained in the step 9) by using a special mask in a sputtering mode to serve as a drain electrode.
The electrical transfer characteristic curves of the multi-level optical memory based on the short-channel organic transistor prepared in the embodiment 1 after the writing (P) voltage and the erasing (E) voltage are applied are shown in fig. 2, in which the transfer characteristic curves of the device under the illumination conditions of the voltage of + 40V and the voltage of + 40V plus different wavelengths are respectively tested, and it can be seen that the threshold voltage of the device is maximally shifted under the illumination condition of 545 nm wavelength, and the threshold voltage of the device shows different threshold voltage shifts for different wavelengths of illumination. Further testing the light resistance of the device under different wavelength illumination conditionsThe endurance curves, as shown in fig. 3, show no significant drop in the device's six different state currents after 200 write/read/erase/read cycles of testing, showing comparable stability. The retention characteristics for these six different states are shown in FIG. 4, passing through 104After the test of s, these six different states of the device are also very stable, indicating a stable multi-level storage capability of the device. The specific nanoscale channel length and the vertical current transmission mode of the short-channel organic transistor multi-level optical storage device endow the device with ultrahigh current density and quick response capability, and meanwhile, the vertical current transmission mode can effectively avoid the influence of transverse cracks generated in the bending process on current transmission, and can be effectively applied to flexible devices. And a single device can simultaneously have a plurality of different storage states, so that multi-level storage is realized, the storage capacity of the single device is improved, and the method has a great application prospect in future storage device integration.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (1)
1. A multi-level optical memory based on short channel organic transistors,
1) ultrasonically cleaning glass substrates with the size of 1.5 cm multiplied by 1.5 cm in acetone and isopropanol respectively for ten minutes, and drying the glass substrates by using nitrogen to be used as substrates;
2) evaporating 100 nm aluminum on a clean substrate by using a special mask plate in a thermal evaporation mode to be used as a gate electrode;
3) depositing an alumina film as a charge blocking layer on the grid electrode by adopting an atomic layer deposition mode, wherein the deposition temperature is 200 ℃, and the thickness of the obtained alumina film is 100 nm;
4) dissolving an organic insulating polymer PVP in a propylene glycol monomethyl ether acetate solvent according to the proportion of 15 mg/ml, stirring at normal temperature for 48 hours to enable the PVP to be completely dissolved, dissolving CdSe/ZnS quantum dots in chloroform according to the proportion of 3 mg/ml, and then completely mixing the PVP solution and the quantum dot solution which are completely dissolved in a volume ratio of 5: 2; using the solution as a floating gate layer material, filtering the floating gate layer material by using a filter plug with the diameter of 0.22 mu m, and then spin-coating the floating gate layer material on the substrate obtained in the step 3); the spin coating speed is firstly low speed 600 rpm/min for 5 s, and then high speed 2000 rpm/min for 30 s; annealing for 2 h in the glove box after spin coating to obtain a floating gate layer film with the thickness of 80 nm;
5) depositing an aluminum oxide film as a tunneling layer on the floating gate layer obtained in the step 4) by adopting an atomic layer deposition mode, wherein the deposition temperature is 200 ℃, and the thickness of the obtained aluminum oxide film is 4 nm;
6) dispersing silver nanowires in isopropanol solvent according to the proportion of 1 mg/ml, and preparing the solution serving as a reticular source electrode material on the tunneling layer obtained in the step 5) by adopting a spin coating mode; the spin coating speed is 2000 rpm/min, the time is 60 s, and then annealing is carried out for 1 min at the temperature of 100 ℃;
7) gold with the width of 200 mu m and the thickness of 50 nm is evaporated on the reticular source electrode obtained in the step 6) by using a special mask plate in a thermal evaporation mode to be used as a source electrode contact electrode;
8) dissolving a semiconductor polymer material PDVT-8 in a chloroform solvent according to the proportion of 10 mg/ml, and preparing the solution serving as an organic semiconductor layer material on the reticular source electrode obtained in the step 6) by adopting a spin coating mode; spin-coating at 1000 rpm/min for 60 s, and annealing at 150 deg.C for 10 min to obtain 120 nm thick organic semiconductor layer film;
9) soaking the device part into a chloroform solvent to completely bubble away PDVT-8 on the source electrode contact electrode, wherein the source electrode contact electrode just exposes to be independent from the PDVT-8;
10) and sputtering Indium Tin Oxide (ITO) with the width of 200 mu m and the thickness of 50 nm on the organic semiconductor layer obtained in the step 9) by using a special mask in a sputtering mode to serve as a drain electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810806368.5A CN109036487B (en) | 2018-07-20 | 2018-07-20 | Multistage optical memory based on short-channel organic transistor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810806368.5A CN109036487B (en) | 2018-07-20 | 2018-07-20 | Multistage optical memory based on short-channel organic transistor and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109036487A CN109036487A (en) | 2018-12-18 |
| CN109036487B true CN109036487B (en) | 2021-03-02 |
Family
ID=64644786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810806368.5A Active CN109036487B (en) | 2018-07-20 | 2018-07-20 | Multistage optical memory based on short-channel organic transistor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109036487B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101295765A (en) * | 2008-06-19 | 2008-10-29 | 中国科学院化学研究所 | Organic field effect transistor, preparation and application thereof |
| CN102682838A (en) * | 2011-03-17 | 2012-09-19 | 中国科学院微电子研究所 | Programming method for organic field effect transistor memory |
| CN102823009A (en) * | 2010-03-04 | 2012-12-12 | 佛罗里达大学研究基金会公司 | Semiconductor devices including an electrically percolating source layer and methods of fabricating the same |
| CN106299122A (en) * | 2016-09-29 | 2017-01-04 | 福州大学 | A kind of method improving non-volatile floating boom OTFT type memory performance |
| CN106953010A (en) * | 2017-03-07 | 2017-07-14 | 南京邮电大学 | A kind of organic field effect tube memory based on polymer-doped semi-conductor nano particles |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6424001B1 (en) * | 2001-02-09 | 2002-07-23 | Micron Technology, Inc. | Flash memory with ultra thin vertical body transistors |
| US6894339B2 (en) * | 2003-01-02 | 2005-05-17 | Actrans System Inc. | Flash memory with trench select gate and fabrication process |
| US7335943B2 (en) * | 2005-05-06 | 2008-02-26 | Atmel Corporation | Ultrascalable vertical MOS transistor with planar contacts |
| US20070034922A1 (en) * | 2005-08-11 | 2007-02-15 | Micron Technology, Inc. | Integrated surround gate multifunctional memory device |
| US8633537B2 (en) * | 2007-05-25 | 2014-01-21 | Cypress Semiconductor Corporation | Memory transistor with multiple charge storing layers and a high work function gate electrode |
| CN101179108A (en) * | 2007-12-12 | 2008-05-14 | 中国科学院长春应用化学研究所 | Non-volatile organic thin-film transistor memory based on floating gate structure and manufacturing method therefor |
| CN101425562B (en) * | 2008-11-25 | 2010-08-11 | 中国科学院微电子研究所 | Nano-scale channel organic field effect transistor and preparation thereof |
| KR101600353B1 (en) * | 2009-05-22 | 2016-03-21 | 삼성전자주식회사 | Optical memory device and recording/reproducing information by using the same |
| CN103247626A (en) * | 2013-05-02 | 2013-08-14 | 复旦大学 | Semi-floating gate device and manufacturing method thereof |
| FR3030883B1 (en) * | 2014-12-17 | 2017-12-22 | Stmicroelectronics Rousset | VERTICAL SELECTION GRID MEMORY CELL FORMED IN A FDSOI TYPE SUBSTRATE |
| CN106571378B (en) * | 2015-10-10 | 2020-03-17 | 清华大学 | Organic memory, press monitoring system and preparation method thereof |
-
2018
- 2018-07-20 CN CN201810806368.5A patent/CN109036487B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101295765A (en) * | 2008-06-19 | 2008-10-29 | 中国科学院化学研究所 | Organic field effect transistor, preparation and application thereof |
| CN102823009A (en) * | 2010-03-04 | 2012-12-12 | 佛罗里达大学研究基金会公司 | Semiconductor devices including an electrically percolating source layer and methods of fabricating the same |
| CN102682838A (en) * | 2011-03-17 | 2012-09-19 | 中国科学院微电子研究所 | Programming method for organic field effect transistor memory |
| CN106299122A (en) * | 2016-09-29 | 2017-01-04 | 福州大学 | A kind of method improving non-volatile floating boom OTFT type memory performance |
| CN106953010A (en) * | 2017-03-07 | 2017-07-14 | 南京邮电大学 | A kind of organic field effect tube memory based on polymer-doped semi-conductor nano particles |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109036487A (en) | 2018-12-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Bertolazzi et al. | Nonvolatile memories based on graphene and related 2D materials | |
| Kim et al. | Electrical memory devices based on inorganic/organic nanocomposites | |
| Shih et al. | High performance transparent transistor memory devices using nano-floating gate of polymer/ZnO nanocomposites | |
| JP5281267B2 (en) | Modifyable gate stack memory device | |
| Chiu et al. | Multilevel nonvolatile transistor memories using a star-shaped poly ((4-diphenylamino) benzyl methacrylate) gate electret | |
| KR100909365B1 (en) | Nonvolatile Organic Bistable Memory and Manufacturing Method Thereof | |
| Dhar et al. | Threshold voltage shifting for memory and tuning in printed transistor circuits | |
| US20060231889A1 (en) | Two-terminal solid-state memory device and two-terminal flexible memory device based on nanocrystals or nanoparticles | |
| KR100654361B1 (en) | Nonvolatile polymer bistability memory devices utilizing nano particles embedded in polymer thin films and manufacturing method thereof | |
| KR100631965B1 (en) | Non-volatile Polymer Bistability Memory Device | |
| JP5738868B2 (en) | Organic dual gate memory and manufacturing method thereof | |
| CN109036487B (en) | Multistage optical memory based on short-channel organic transistor and preparation method thereof | |
| KR20050096224A (en) | Flash memory device comprising floating gate utilizing nanocrystals embeded in polymer thin film and fabrication method thereof | |
| Yang et al. | Flexible multi-level quasi-volatile memory based on organic vertical transistor | |
| KR100868096B1 (en) | Non-Volatile memory fabricated with embedded nano-crystals in conductive polymer and method for manufacturing the same | |
| Wu et al. | Solution processed nonvolatile polymer transistor memory with discrete distributing molecular semiconductor microdomains as the charge trapping sites | |
| KR20090116593A (en) | Organic thin film transistor, method for preparation of the transistor and biosenser using the same | |
| KR100855559B1 (en) | Non-volatile memory with conducting polymer embedded by nano-crystals and method for manufacturing the same | |
| CN109494228B (en) | Nonvolatile memory with multi-bit storage function and preparation method thereof | |
| Paul et al. | Storing electronic information on semi-metal nanoparticles | |
| CN107968151A (en) | A kind of nano complex transistorized memory and preparation method thereof | |
| KR20100123250A (en) | Non-volatile memory device and method for manufacturing the same | |
| CN106981573B (en) | A kind of organic field effect tube memory and preparation method thereof from barrier layer structure | |
| KR100889779B1 (en) | Memory devices and method of fabricating the same | |
| JP2022107072A (en) | Variable resistance device and manufacturing method for the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |