CN106981573B - A kind of organic field effect tube memory and preparation method thereof from barrier layer structure - Google Patents

A kind of organic field effect tube memory and preparation method thereof from barrier layer structure Download PDF

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CN106981573B
CN106981573B CN201710166292.XA CN201710166292A CN106981573B CN 106981573 B CN106981573 B CN 106981573B CN 201710166292 A CN201710166292 A CN 201710166292A CN 106981573 B CN106981573 B CN 106981573B
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organic
substrate
field effect
effect tube
barrier layer
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CN106981573A (en
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仪明东
李焕群
凌海峰
解令海
包岩
宋子忆
黄维
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Nanjing Post and Telecommunication University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The invention discloses a kind of organic field effect tube memories from barrier layer structure, it is followed successively by source-drain electrode, organic photosensitive semiconductor layer, gate insulation layer and substrate from top to bottom, mixed polymer is equipped between the organic photosensitive semiconductor layer and gate insulation layer from block film layer；The present invention improves the storage performance of device by simple process means, its memory capacity, switching speed and tolerance is made to be greatly improved；And device preparation cost is reduced, convenient for promoting, applying.

Description

A kind of organic field effect tube memory and preparation method thereof from barrier layer structure
Technical field
The invention belongs to semicon industry memory technology field more particularly to a kind of organic field effects from barrier layer structure Answer transistorized memory and preparation method thereof.
Background technique
Organic field effect tube as the basic component in electronic circuit, because its with material source extensively, it is soft, The simple feature of processing technology, and can be applied to large area printing technology, it is very suitable to next-generation wearable electronic industry development Direction.Organic field effect tube determines that it has functional application abundant from its structure simultaneously, such as shines, storage, passes Sense, switch etc., therefore be with a wide range of applications in information electronic field.
There is one kind can be with the insulating materials of persistence charge in charge transport layer.Because charge can be stored for a long time, Tolymer electrets have been used in a variety of applications such as sensor, electronics development, optical presentation system.Have at present The report of many high speeds, the long dielectric type organic field effect tube memory held time.
In order to optimize charge transport layer, people have done many effort, organic using different materials, such as inorganic material Molecule and polymer and metal nanoparticle are all proved to can be used as charge storage layer, effectively improve non-volatile organic The performance of field effect transistor memory, and these materials have it is from a wealth of sources, can carry out it is molecular engineering, it is cheap etc. Feature is to more advance the application of organic field effect tube memory.
The present invention provides a kind of photosensitive memory of the organic field effect tube from barrier layer and preparation method thereof, uses two Kind of polymer material, the memory can improve storage characteristics simultaneously, and have low operating voltage, high speed of photoresponse, The features such as high storage density and high data stability.
Summary of the invention
The technical issues of solution: the present invention is mainly to propose that a kind of organic field effect tube from barrier layer structure stores Device and preparation method thereof, solution exist in the prior art material source not extensively, operation voltage it is higher, speed of photoresponse supports, deposits Store up the low technical problems such as low with data stability of density.
Technical solution: a kind of organic field effect tube memory from barrier layer structure, it is described from barrier layer structure Organic field effect tube memory is followed successively by source-drain electrode, organic photosensitive semiconductor layer, gate insulation layer and substrate from top to bottom, Mixed polymer is equipped between the organic photosensitive semiconductor layer and gate insulation layer from block film layer, the mixed polymer is certainly Polymer in block film layer in polyvinylcarbazole PVK, polystyrene PS, polymethyl methacrylate PMMA two Kind, the mixed polymer reaches Nano grade from block film thickness 15-25nm, the particle ruler diameter of hybrid polymer film.
As a preferred technical solution of the present invention: the material that the source-drain electrode uses is selected from metal or organic conductor Material, the material that the source-drain electrode uses is selected from metal or organic conductor material, with a thickness of 60 ~ 100 nm, preparation side Method is magnetron sputtering method, ink-jet printing or vacuum vapour deposition, and the material that the source-drain electrode uses is selected from copper or gold.
As a preferred technical solution of the present invention: the material that the organic photosensitive semiconductor layer uses is selected from simultaneously five Benzene, aphthacene, CuPc, fluorinated phthalocyanine copper, rubrene, 3- hexyl thiophene or anthracene, the organic photosensitive semiconductor layer are adopted Formed a film with vacuum vapour deposition, organic photosensitive semiconductor layer with a thickness of 30 ~ 50 nm.
As a preferred technical solution of the present invention: the material that the gate insulation layer uses is selected from silica, oxidation Aluminium, zirconium oxide or polyvinylpyrrolidone PVP, gate insulation layer with a thickness of 50 ~ 300 nm；The substrate is selected from highly doped silicon Piece, sheet glass or plastics PET.
As a preferred technical solution of the present invention: the substrate is equipped with gate electrode, the material that the gate electrode uses Material is selected from highly doped silicon, aluminium, copper, silver, gold, titanium or tantalum.
As a preferred technical solution of the present invention: the organic field effect tube memory from barrier layer structure Preparation method, include the following steps:
Step 1: two kinds of polymer, is dissolved in toluene, chlorobenzene, chloroform or chlorine by configuration two kinds of polymer solution respectively Imitative, concentration is 5 mg/mL, and standing is mixed to get mixed polymer solution after being uniformly dispersed；
Step 2: sequentially form gate electrode and gate insulation layer on substrate, be made substrate, substrate successively use acetone, ethyl alcohol, Deionized water is respectively cleaned by ultrasonic 10min, and supersonic frequency is 100 KHz, then is dried up substrate surface liquid to protect with high pure nitrogen It is clean to demonstrate,prove substrate surface, is put into 120 DEG C of baking oven and dries later；
Step 3: the clean substrate after drying is handled 3 ~ 5 min using UV ozone；
Step 4: in air, by the prepared mixed polymer of the spin coating first step above the substrate prepared in third step Solution, spin coating revolving speed is 3000 r/min, spin-coating time 30s, with a thickness of 15 ~ 25 nm, forms mixed polymer from block film Layer, in air, is placed on 30 min of drying and annealing in 80 DEG C of baking oven for the good substrate of spin coating；
Step 5: the mixed polymer prepared in the 4th step successively organic light of vacuum evaporation from above block film layer Sensitive semiconductor layer and source-drain electrode.
As a preferred technical solution of the present invention: vacuum evaporation organic photosensitive semiconductor layer material described in the 5th step Material is pentacene, and evaporation rate is 1/s, and vacuum degree control is 5 × 10-4Pa hereinafter, using crystal oscillator control thickness 30 ~ 50nm；Patterned process, vacuum evaporation described in the 5th step are carried out plus mask plate in the organic photosensitive semiconductor layer surface of preparation Source-drain electrode materials be copper or gold, 0.5/s of evaporation rate, control thickness in 60 ~ 100nm；The ditch road width of the mask plate Degree is 2000 μm, and length is 100 μm.
The utility model has the advantages that of the present invention a kind of from the organic field effect tube memory of barrier layer structure and its preparation side Method compared with the prior art by using the above technical solution, has following technical effect that 1, will answer from barrier layer and preparation method thereof In organic field effect tube memory, serve as the charge storage of device source-drain electrode and organic semiconductor layer it is thin Film layer, this hybrid polymer film reach Nano grade using its particle ruler diameter, are ideal capture charge points and mention significantly High storage density adjusts film tunneling barrier, improves device storage performance；2, storage characteristics can be improved simultaneously, and had low The features such as operating voltage, high speed of photoresponse, high storage density and high data stability；3, this organic field provided by the invention Effect transistor memory construction, can not increase process complexity and simple equipment preparation under the premise of, effectively Improve device to the efficiency in capture hole, reduce contact resistance and charge tunneling barrier, thus reduce to operation voltage according to Rely, reduce energy loss, provides a kind of feasible thinking for the commercialization popularization of organic photosensitive memory；4, the memory knot Structure improves the tolerance of memory simultaneously；5, the memory construction improves the storage performance and light sensitivity of photosensitive memory simultaneously Energy；6, metallic copper can be used as device source-drain electrode in the memory construction, reduces device preparation cost, convenient for promoting, Using；7, the preparation method of organic field effect tube memory provided by the invention, this method simple process, convenient for operating, Reduce human cost.
Detailed description of the invention:
Fig. 1 is the structural schematic diagram of the organic field effect tube memory of the present invention from barrier layer structure；
Fig. 2 is in embodiment 1 from the organic field effect tube memory of barrier layer structure from barrier layer ratio position PS: The transfer characteristic curve figure that PVK=1:0 is written in -120V grid voltage；
Fig. 3 be in embodiment 1 from the organic field effect tube memory of barrier layer structure from barrier layer ratio be PS: The transfer characteristic curve figure that PVK=5:1 is written in -120V grid voltage；
Fig. 4 be in embodiment 1 from the organic field effect tube memory of barrier layer structure from barrier layer ratio be PS: The transfer characteristic curve figure that PVK=1:1 is written in -120V grid voltage；
Fig. 5 be in embodiment 1 from the organic field effect tube memory of barrier layer structure from barrier layer ratio be PS: The transfer characteristic curve figure that PVK=10:1 is written in -120V difference grid voltage；
Fig. 6 be in embodiment 1 from the organic field effect tube memory of barrier layer structure from barrier layer ratio be PS: Circulation figure is wiped in the read-write of PVK=1:1；
Fig. 7 be in embodiment 1 from the organic field effect tube memory of barrier layer structure from barrier layer ratio be PS: Circulation figure is wiped in the read-write of PVK=5:1.
Fig. 8 be in embodiment 1 from the organic field effect tube memory of barrier layer structure from barrier layer ratio be PS: Circulation figure is wiped in the read-write of PVK=10:1.
Fig. 9 is in embodiment 1 The figure of holding time of different proportion.
Description of symbols: 1, source-drain electrode, 2, organic photosensitive semiconductor layer, 3, mixed polymer from block film layer, 4, gate insulation layer, 5, substrate.
Specific embodiment
Specific embodiments of the present invention will be described in further detail with reference to the accompanying drawings of the specification:
Embodiment 1
As shown in figs 1-9, step 1: at 25 DEG C, polystyrene PS solution is configured, solution concentration is 5 mg/ml, molten Agent makes it be uniformly dispersed to stand 12 h in the solution of toluene；
Step 2: configuration polyvinylcarbazole PVK solution, solution concentration is 5 mg/ml, quiet in the solution that solvent is toluene 2 h are set, it is made to be uniformly dispersed；
Step 3: the PS solution of configuration and PVK solution are pressed the doping of 1:1,5:1,10:1 and 1:0 volume ratio respectively；
Step 4: sequentially form gate electrode and gate insulation layer 4 on substrate 5, gate insulation layer 4 with a thickness of 300 nm, system At substrate, substrate successively uses acetone, ethyl alcohol, deionized water to be respectively cleaned by ultrasonic 10min, and supersonic frequency is 100 KHz, then with high-purity Nitrogen dries up substrate surface liquid to guarantee substrate surface cleaning, is put into 120 DEG C of baking oven and dries later；
Step 5: placing substrate dried in the 4th step as handled 3min in UV ozone machine；
Step 6: in air, the configured solution of substrate surface spin coating third step that the 5th step is handled well, spin coating turns Speed is 3000 r/min, spin-coating time 30s, and thickness control forms mixed polymer from block film layer 3 in 20 nm；In air In, the good substrate of spin coating is placed on 30 min of drying and annealing in 80 DEG C of baking oven；
Step 7: the mixed polymer prepared in step 6 is from vacuum evaporation organic photosensitive above block film layer 3 half Conductor layer 2,2 material of organic photosensitive semiconductor layer are pentacene, and evaporation rate is 1/s, and vacuum degree control is 5 × 10-4 Pa with Under, using crystal oscillator control evaporated film with a thickness of 50 nm, organic photosensitive semiconductor layer 2 is made；It is partly led in the organic photosensitive of preparation 2 surface of body layer carries out patterned process plus mask plate, then vacuum evaporation copper serves as source-drain electrode 1,0.5/s of evaporation rate, Thickness is controlled in 60 ~ 80 nm；The channel width of mask plate is 2000 μm, and length is 100 μm.
After the completion of device preparation, electric property is characterized by 4200 semiconductor analysis instrument of Agilent, and data processing is drawn Manufactured transfer curve is as shown in figs. 2-9.
Fig. 2 is the bent from the negative sense storage characteristics transfer that block film layer is simple PS application -120V grid voltage respectively of device Line, it can be seen from the figure that device is also without very big memory window when applying sizable negative sense grid voltage.
Fig. 3 be device from block film layer PS:PVK doping ratio 1:1 when, the negative sense of application -120V grid voltage is deposited respectively Store up characteristic transfer curve, it can be seen from the figure that memory window of the device under identical grid voltage than simple PS Fig. 2 than Greatly, memory window can reach 22.2V when application -120V grid voltage.
Fig. 4 be device from block film layer PS:PVK doping ratio 5:1 when, the negative sense of application -120V grid voltage is deposited respectively Store up characteristic transfer curve, it can be seen from the figure that memory window of the device under identical grid voltage than simple PS Fig. 2 than Greatly, more smaller than mixing dielectric layer PS:PVK doping ratio 1:1, memory window can reach 20.4V when application -120V grid voltage.
Fig. 5 be device from block film layer PS:PVK doping ratio 10:1 when, the negative sense of application -120V grid voltage is deposited respectively Store up characteristic transfer curve, it can be seen from the figure that memory window of the device under different grid voltages will than simple PS Fig. 2 than Greatly, smaller than mixing dielectric layer PS:PVK doping ratio 5:1, memory window can reach 12.7V when application -120V grid voltage.
Fig. 6 be device from block film layer PS:PVK doping ratio 1:1 when read-write wipe circulation, current on/off ratio does not have It varies widely, and it is 1.2x10 that current on/off ratio after recycling is wiped in 20 read-writes2。
Fig. 7 be device from block film layer PS:PVK doping ratio 5:1 when read-write wipe circulation, current on/off ratio is very flat Surely, and after 20 read-writes wiping circulations current on/off ratio is 3.5x102。
Fig. 8 be device from block film layer PS:PVK doping ratio 10:1 when read-write wipe circulation, current on/off ratio does not have It varies widely, and it is 8.3x10 that current on/off ratio after recycling is wiped in 20 read-writes1。
Fig. 9 is holding time from what block film layer different proportion adulterated for device, and mixing dielectric layer PS:PVK adulterates ratio When example 10:1, the current on/off ratio after 10000s reaches 1.8x101；When mixing dielectric layer PS:PVK doping ratio 5:1,10000s Current on/off ratio afterwards reaches 1.2x103；Current on/off ratio when mixing dielectric layer PS:PVK doping ratio 10:1, after 10000s Reach 2.8x102。
All test results show the organic field effect tube memory device according to the present invention from barrier layer structure Functional, stability is good, and data keep high reliablity, device when from block film layer PS:PVK doping ratio 10:1 with PS:PVK doping ratio 1:1 has found that its memory window is larger compared with the device of 10:1；Tolerance and stability are more preferable； Current on/off ratio is maximum.And easy to operate in preparation process, low in cost, main processes are completed in the solution, are saved The energy, and can be mass produced.
Embodiment 2
Step 1: configuring polymethyl methacrylate PMMA solution, solution concentration is 5 mg/ml, in solvent at 25 DEG C To stand 12 h in the solution of toluene, it is made to be uniformly dispersed；
Step 2: configuration polyvinylcarbazole PVK solution, solution concentration is 5 mg/ml, quiet in the solution that solvent is toluene 2 h are set, it is made to be uniformly dispersed；
Step 3: the PMMA solution of configuration and PVK solution are pressed the doping of 1:1,5:1,10:1 and 1:0 volume ratio respectively；
Step 4: sequentially form gate electrode and gate insulation layer 4 on substrate 5, gate insulation layer 4 with a thickness of 300 nm, system At substrate, substrate successively uses acetone, ethyl alcohol, deionized water to be respectively cleaned by ultrasonic 10min, and supersonic frequency is 100 KHz, then with high-purity Nitrogen dries up substrate surface liquid to guarantee substrate surface cleaning, is put into 120 DEG C of baking oven and dries later；
Step 5: placing substrate dried in the 4th step as handled 3min in UV ozone machine；
Step 6: in air, the configured solution of substrate surface spin coating third step that the 5th step is handled well, spin coating turns Speed is 3000 r/min, spin-coating time 30s, and thickness control forms mixed polymer from block film layer 3 in 10 nm；In air In, the good substrate of spin coating is placed on 30 min of drying and annealing in 80 DEG C of baking oven；
Step 7: the mixed polymer prepared in step 6 is from vacuum evaporation organic photosensitive above block film layer 3 half Conductor layer 2,2 material of organic photosensitive semiconductor layer are pentacene, and evaporation rate is 1/s, and vacuum degree control is 5 × 10-4 Pa with Under, using crystal oscillator control evaporated film with a thickness of 30 nm, organic photosensitive semiconductor layer 2 is made；It is partly led in the organic photosensitive of preparation 2 surface of body layer carries out patterned process plus mask plate, then vacuum evaporation copper serves as source-drain electrode 1,0.5/s of evaporation rate, Thickness is controlled in 100 nm；The channel width of mask plate is 2000 μm, and length is 100 μm.
The present invention passes through letter for based on being introduced into organic field effect tube memory from the film of barrier polymers The problem of single process means effective solution organic memory memory window is small, poor resistance, for organic memory quotient Industryization promotes important in inhibiting.
It will be applied from barrier layer and preparation method thereof in organic field effect tube memory, and serve as the charge of device The source-drain electrode of storage and the film layer of organic semiconductor layer, this hybrid polymer film are reached using its particle ruler diameter and are received Meter level is other, is ideal capture charge point and greatly improves storage density, adjusts film tunneling barrier, improve device storage Energy；Storage characteristics can be improved simultaneously, and there is low operating voltage, high speed of photoresponse, high storage density and high data stabilization The features such as property；This organic field effect tube memory construction provided by the invention can not increase process complexity simultaneously And under the premise of the preparation of simple equipment, the effective device that improves reduces contact resistance and charge to the efficiency in capture hole Tunneling barrier reduces energy loss to reduce the dependence to operation voltage, mentions for the commercialization popularization of organic photosensitive memory For a kind of feasible thinking；The memory construction improves the tolerance of memory simultaneously；The memory construction is improved simultaneously The storage performance and photosensitive property of photosensitive memory；Metallic copper can be used as device source-drain electrode, drop in the memory construction Low device preparation cost, convenient for promoting, application；The preparation method of organic field effect tube memory provided by the invention, This method simple process reduces human cost convenient for operation.
Embodiments of the present invention are explained in detail above in conjunction with attached drawing, but the present invention is not limited to above-mentioned implementations Mode within the knowledge of a person skilled in the art can also be without departing from the purpose of the present invention It makes a variety of changes.

Claims (7)

1. a kind of organic field effect tube memory from barrier layer structure, the organic effect from barrier layer structure is brilliant Body pipe memory is followed successively by source-drain electrode (1), organic photosensitive semiconductor layer (2), gate insulation layer (4) and substrate (5) from top to bottom, It is characterized by: being equipped with mixed polymer between the organic photosensitive semiconductor layer (2) and gate insulation layer (4) from block film layer (3), the mixed polymer is selected from polyvinylcarbazole PVK, polystyrene PS, poly- first from the polymer in block film layer (3) Two kinds in base methacrylate PMMA, for the mixed polymer from block film layer (3) thickness 15-25nm, mixed polymer is thin The particle ruler diameter of film reaches Nano grade.
2. the organic field effect tube memory according to claim 1 from barrier layer structure, it is characterised in that: described The material that source-drain electrode (1) uses is selected from metal or organic conductor material, and with a thickness of 60 ~ 100 nm, preparation method is magnetic Sputtering method, ink-jet printing or vacuum vapour deposition are controlled, the material that the source-drain electrode (1) uses is selected from copper or gold.
3. the organic field effect tube memory according to claim 1 from barrier layer structure, it is characterised in that: described Organic photosensitive semiconductor layer (2) use material be selected from pentacene, aphthacene, CuPc, fluorinated phthalocyanine copper, rubrene, 3- oneself Base thiophene or anthracene, the organic photosensitive semiconductor layer (2) are formed a film using vacuum vapour deposition, organic photosensitive semiconductor layer (2) With a thickness of 30 ~ 50 nm.
4. the organic field effect tube memory according to claim 1 from barrier layer structure, it is characterised in that: described The material that gate insulation layer (4) uses is selected from silica, aluminium oxide, zirconium oxide or polyvinylpyrrolidone PVP, gate insulation layer (4) with a thickness of 50 ~ 300 nm；The substrate (5) is selected from highly doped silicon wafer, sheet glass or plastics PET.
5. the organic field effect tube memory according to claim 1 from barrier layer structure, it is characterised in that: described Substrate (5) is equipped with gate electrode, and the material that the gate electrode uses is selected from highly doped silicon, aluminium, copper, silver, gold, titanium or tantalum.
6. a kind of side for preparing any organic field effect tube memory from barrier layer structure of claim 1-5 Method, which comprises the steps of:
Step 1: two kinds of polymer, is dissolved in toluene, chlorobenzene, chloroform or chloroform by configuration two kinds of polymer solution respectively, it is dense Degree is 5 mg/mL, and standing is mixed to get mixed polymer solution after being uniformly dispersed；
Step 2: sequentially forming gate electrode and gate insulation layer (4) on substrate (5), substrate is made, substrate successively uses acetone, second Alcohol, deionized water are respectively cleaned by ultrasonic 10min, and supersonic frequency is 100 KHz, then with high pure nitrogen by substrate surface liquid dry up with Guarantee that substrate surface is clean, is put into 120 DEG C of baking oven and dries later；
Step 3: the clean substrate after drying is handled 3 ~ 5 min using UV ozone；
Step 4: in air, by the prepared mixed polymer solution of the spin coating first step above the substrate prepared in third step, Spin coating revolving speed is 3000 r/min, spin-coating time 30s, with a thickness of 15 ~ 25 nm, forms mixed polymer from block film layer (3), the good substrate of spin coating in air, is placed on 30 min of drying and annealing in 80 DEG C of baking oven；
Step 5: the mixed polymer prepared in the 4th step is from block film layer (3) the successively organic light of vacuum evaporation above Sensitive semiconductor layer (2) and source-drain electrode (1).
7. the preparation method of the organic field effect tube memory according to claim 6 from barrier layer structure, special Sign is: vacuum evaporation organic photosensitive semiconductor layer (2) material described in the 5th step is pentacene, and evaporation rate is 1/s, Vacuum degree control is 5 × 10-4Pa is hereinafter, using crystal oscillator control thickness in 30 ~ 50nm；In the organic photosensitive semiconductor layer of preparation (2) surface carries out patterned process plus mask plate, and source-drain electrode (1) material of vacuum evaporation described in the 5th step is copper or gold, 0.5/s of evaporation rate controls thickness in 60 ~ 100nm；The channel width of the mask plate is 2000 μm, and length is 100 μ m。
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