CN108950679B - Method for on-line monitoring shape of long grain boundary surface in czochralski crystal growing furnace - Google Patents
Method for on-line monitoring shape of long grain boundary surface in czochralski crystal growing furnace Download PDFInfo
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- CN108950679B CN108950679B CN201810690392.7A CN201810690392A CN108950679B CN 108950679 B CN108950679 B CN 108950679B CN 201810690392 A CN201810690392 A CN 201810690392A CN 108950679 B CN108950679 B CN 108950679B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
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Abstract
The invention discloses a method for monitoring the shape of a long grain boundary surface in a czochralski crystal growing furnace on line. The temperature measuring device is used for measuring the temperatures of two monitoring points on the side wall of the crystal, so that the shape change of the long crystal boundary surface in the crystal pulling process can be conveniently and accurately predicted, guidance is provided for the adjustment of the crystal growing process, and finally the high-quality semiconductor single crystal is obtained.
Description
Technical Field
The invention belongs to the field of Czochralski method single crystal growth, and particularly relates to a method for monitoring the shape of a long crystal boundary surface in a Czochralski single crystal furnace on line.
Background
The Czochralski method is a method for growing single crystals proposed by Polish scientist JanCzochraski in 1918. This method is applied first to growing single crystal germanium and later to growing single crystal silicon. The method has the advantages of easy growth of large-diameter, dislocation-free and low-point defect concentration single crystals, and is widely applied to the field of growth of large-size semiconductor grade single crystal silicon at present.
During the crystal growth process, the shape of the crystal growth interface has a great influence on the final quality of the crystal. Crystal internal vacancies and interstitial point defects are generated near long grain boundary faces, the shape of which can significantly affect the type of crystal internal point defects. Meanwhile, the unreasonable shape of the long grain boundary surface can cause the internal thermal stress of the crystal to be overlarge, thereby causing the generation of dislocation. In addition, the uniformity of the radial distribution of dopants and impurities in the crystal is also affected by the shape of the long grain boundary faces.
During the crystal pulling process, the crystal growth interface is covered by the melt and the crystal and is difficult to directly observe.
Disclosure of Invention
The invention aims to provide a method for monitoring the shape of a long crystal boundary surface in a czochralski crystal growing furnace on line, which aims to solve the technical problem that the shape of a crystal growth interface is difficult to observe in the crystal pulling process.
The invention is realized by adopting the following technical scheme:
a method for monitoring the shape of a long grain boundary surface in a czochralski crystal growing furnace on line comprises the following steps: two temperature monitoring points, namely a first temperature monitoring point and a second temperature monitoring point, are arranged on the side wall of the high-temperature crystal, and the shape change of the long grain boundary surface between the high-temperature crystal and the melt is predicted by combining the temperatures of the three phase points.
The invention is further improved in that the first temperature monitoring point and the second temperature monitoring point are distributed with the three-phase point at equal intervals along the crystal pulling direction.
The invention is further improved in that the distance between the first temperature monitoring point and the three-phase point and the second temperature monitoring point is 2cm-20 cm.
A further development of the invention is that the position of the first temperature monitoring point and the second temperature monitoring point is kept constant during the crystal pulling process.
The invention is further improved in that the temperature T is monitored according to the first temperature1And the temperature T of the second temperature monitoring point2And temperature T of triple point3Due to the fact that
Exhibits a remarkably strong linear relationship with the convexity h of the crystal growth interface, and therefore passes
The change in the shape of the long grain boundary surface is predicted.
The invention has the following beneficial technical effects:
according to the method for monitoring the shape of the long grain boundary surface in the czochralski crystal growing furnace on line, the shape change of the long grain boundary surface in the crystal pulling process can be conveniently and accurately predicted by monitoring the temperatures of two monitoring points on the side wall of the crystal and combining the temperatures of three phase points, so that guidance is provided for adjusting a crystal growing process, and finally, a high-quality semiconductor single crystal is obtained.
Drawings
FIG. 1 is a schematic diagram of the temperature monitoring point arrangement of the present invention.
FIG. 2 is a schematic view of the shape of a long grain boundary face.
FIG. 3 is a schematic diagram showing the results of the relationship between the shape of the long grain boundary surface and φ in the present invention.
In the figure: 1-a first temperature monitoring point; 2-a second temperature monitoring point; 3-triple point; 4-high temperature crystallization; 5-melting the mixture; 6-crystal growth interface.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
As shown in FIG. 1, the invention provides a method for on-line monitoring the shape of a long grain boundary surface in a czochralski crystal growing furnace, which comprises the following steps: two temperature monitoring points, namely a first temperature monitoring point 1 and a second temperature monitoring point 2, are arranged on the side wall of the high-temperature crystal 4. In particular, the distance H between the first temperature monitoring point 1 and the third phase point 3 is equal to the distance H between the second temperature monitoring point 2 and the third phase point 3, and is 2-20 cm. The positions of the first temperature monitoring point 1 and the second temperature monitoring point 2 are kept unchanged during the whole crystal pulling process. The shape of the nucleation interface is generally described by the convexity h of the nucleation interface, as shown in FIG. 2.
During the crystal pulling process, the temperature T of the first temperature monitoring point 1 is monitored1And the temperature T of the second temperature monitoring point 22And temperature T of triple point 33By passing
The change in the shape of the crystal growth interface 6 is predicted.
To illustrate the feasibility and effectiveness of this solution, numerical simulations were performed on different crystal growth conditions during the crystal pulling process, and the simulation results are shown in fig. 3, and it can be found that,
exhibits a pronounced strong linear relationship with the convexity h of the nucleation interface, i.e. by
The change in the shape of the long grain boundary face can be accurately predicted.
The temperature of the temperature measuring point can be obtained in a plurality of modes, such as contact temperature measurement or non-contact temperature measurement. All modifications which can be derived or suggested directly from the disclosure of the present invention by a person skilled in the art are to be considered within the scope of the present invention.
Claims (3)
1. Method for on-line monitoring shape of long grain boundary surface in czochralski crystal growing furnace, and methodCharacterized in that the method comprises: two temperature monitoring points, namely a first temperature monitoring point (1) and a second temperature monitoring point (2), are arranged on the side wall of the high-temperature crystal (4), and the temperature T of the first temperature monitoring point (1) is used1And the temperature T of the second temperature monitoring point (2)2And the temperature T of the triple point (3)3Due to the fact that
Has a strong linear relationship with the convexity h of the nucleation interface, and thus passes
Predicting the change of the shape of the crystal growth interface (6), wherein the first temperature monitoring point (1), the second temperature monitoring point (2) and the triple point (3) are distributed at equal intervals along the crystal pulling direction.
2. The method for monitoring the shape of the long grain boundary surface in the czochralski crystal growing furnace in an online manner according to claim 1, wherein the distance between the first temperature monitoring point (1) and the third phase point (3) and the second temperature monitoring point (2) is 2cm-20 cm.
3. The method for on-line monitoring the shape of the long grain boundary surface in the czochralski crystal growing furnace according to claim 1, wherein the positions of the first temperature monitoring point (1) and the second temperature monitoring point (2) are kept unchanged during the crystal pulling process.
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| CN108950679B true CN108950679B (en) | 2020-04-28 |
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| JPH05148080A (en) * | 1991-11-28 | 1993-06-15 | Kyushu Electron Metal Co Ltd | Method for growing single crystal |
| CN1320724A (en) * | 2000-04-26 | 2001-11-07 | 三菱麻铁里亚尔硅材料株式会社 | Single crystal and melt solid-liquid interface shape and single crystal point defect distribution simulation method |
| JP2004018324A (en) * | 2002-06-18 | 2004-01-22 | Sumitomo Mitsubishi Silicon Corp | Method of predicting pulling condition of pure silicon single crystal |
| CN1721586A (en) * | 2005-05-13 | 2006-01-18 | 中国科学院上海硅酸盐研究所 | A kind of fuse-elements crystal real-time viewing system |
| CN1737216A (en) * | 2004-06-07 | 2006-02-22 | Memc电子材料有限公司 | Method and apparatus for growing silicon crystal by controlling melt-solid interface shape |
| CN101037794A (en) * | 2005-12-30 | 2007-09-19 | 斯尔瑞恩公司 | Method for producing high quality silicon single crystal and silicon single crystal wafer made by using the same |
| CN101445954A (en) * | 2007-11-26 | 2009-06-03 | 北京有色金属研究总院 | Method for controlling temperature gradient and thermal history of a crystal-melt interface in growth process of czochralski silicon monocrystal |
| CN105401212A (en) * | 2015-12-02 | 2016-03-16 | 上海超硅半导体有限公司 | Single crystal silicon growth control method |
| CN107109687A (en) * | 2014-12-30 | 2017-08-29 | Lg矽得荣株式会社 | The crystal growth system and method for ingot interface shape can be controlled |
| CN107955965A (en) * | 2017-11-22 | 2018-04-24 | 邢台晶龙电子材料有限公司 | A kind of method that vertical pulling method prepares monocrystalline silicon |
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2018
- 2018-06-28 CN CN201810690392.7A patent/CN108950679B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05148080A (en) * | 1991-11-28 | 1993-06-15 | Kyushu Electron Metal Co Ltd | Method for growing single crystal |
| CN1320724A (en) * | 2000-04-26 | 2001-11-07 | 三菱麻铁里亚尔硅材料株式会社 | Single crystal and melt solid-liquid interface shape and single crystal point defect distribution simulation method |
| JP2004018324A (en) * | 2002-06-18 | 2004-01-22 | Sumitomo Mitsubishi Silicon Corp | Method of predicting pulling condition of pure silicon single crystal |
| CN1737216A (en) * | 2004-06-07 | 2006-02-22 | Memc电子材料有限公司 | Method and apparatus for growing silicon crystal by controlling melt-solid interface shape |
| CN1721586A (en) * | 2005-05-13 | 2006-01-18 | 中国科学院上海硅酸盐研究所 | A kind of fuse-elements crystal real-time viewing system |
| CN101037794A (en) * | 2005-12-30 | 2007-09-19 | 斯尔瑞恩公司 | Method for producing high quality silicon single crystal and silicon single crystal wafer made by using the same |
| CN101445954A (en) * | 2007-11-26 | 2009-06-03 | 北京有色金属研究总院 | Method for controlling temperature gradient and thermal history of a crystal-melt interface in growth process of czochralski silicon monocrystal |
| CN107109687A (en) * | 2014-12-30 | 2017-08-29 | Lg矽得荣株式会社 | The crystal growth system and method for ingot interface shape can be controlled |
| CN105401212A (en) * | 2015-12-02 | 2016-03-16 | 上海超硅半导体有限公司 | Single crystal silicon growth control method |
| CN107955965A (en) * | 2017-11-22 | 2018-04-24 | 邢台晶龙电子材料有限公司 | A kind of method that vertical pulling method prepares monocrystalline silicon |
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Effective date of registration: 20210508 Address after: No.1000 Yunshui Road, Nicheng Town, Pudong New Area, Shanghai, 201306 Patentee after: ZING SEMICONDUCTOR Corp. Address before: Beilin District Xianning West Road 710049, Shaanxi city of Xi'an province No. 28 Patentee before: XI'AN JIAOTONG University |