CN108950679A - A kind of method of long brilliant interface shape in on-line monitoring czochralski crystal growing furnace - Google Patents
A kind of method of long brilliant interface shape in on-line monitoring czochralski crystal growing furnace Download PDFInfo
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- CN108950679A CN108950679A CN201810690392.7A CN201810690392A CN108950679A CN 108950679 A CN108950679 A CN 108950679A CN 201810690392 A CN201810690392 A CN 201810690392A CN 108950679 A CN108950679 A CN 108950679A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of methods of long brilliant interface shape in on-line monitoring czochralski crystal growing furnace, two temperature monitoring points are arranged in crystal side wall, two temperature monitoring points and three phase point predict the variation of long brilliant interface shape in conjunction with the temperature of three phase point to equidistantly distributed along long chip.The present invention measures the temperature of two monitoring points of crystal side wall by temperature measuring equipment, conveniently can accurately predict the variation of long brilliant interface shape during crystal pulling, provide guidance for the adjustment of crystal growing technology, the semiconductor monocrystal of final acquisition high quality.
Description
Technical field
The invention belongs to vertical pulling method field of single crystal growth, and in particular to long crystal boundary face in a kind of on-line monitoring czochralski crystal growing furnace
The method of shape.
Background technique
Vertical pulling method is a kind of growth single-crystal techniques proposed by scientist in Poland JanCzochraski in 1918.It is this
Method is applied to growth monocrystalline germanium first, is applied to growth monocrystalline silicon later.Growth major diameter, nothing are easy since it has
The advantage of dislocation, Low Point Defects concentration monocrystalline is widely used growing large-size semiconductor grade monocrystalline silicon field at present.
In crystal growing process, the quality that the shape in long crystal boundary face is final to crystal is had a very big impact.In crystal
Portion vacancy and interstitial atom point defect generate near long crystal boundary face, and long crystalline substance interface shape can significantly affect crystals point
The type of defect.Meanwhile unreasonable long brilliant interface shape will lead to that crystals thermal stress is excessive, and then cause the production of dislocation
It is raw.In addition, dopant and the radially-arranged uniformity of impurity are also influenced by long brilliant interface shape in crystal.
During crystal pulling, long crystal boundary face is covered by melt and crystal, it is difficult to directly be observed.
Summary of the invention
The purpose of the present invention is to provide a kind of methods of long brilliant interface shape in on-line monitoring czochralski crystal growing furnace, to solve
The shape in long crystal boundary face is difficult to the technical issues of observing during crystal pulling.
The present invention adopts the following technical scheme that realize:
A kind of method of long brilliant interface shape in on-line monitoring czochralski crystal growing furnace, this method comprises: in high temperature crystal side wall
It arranges two temperature monitoring points, respectively the first temperature monitoring point and second temperature monitoring point, and combines the temperature of three phase point, in advance
The variation of long brilliant interface shape of the location between high temperature crystal and melt.
A further improvement of the present invention lies in that the first temperature monitoring point and second temperature monitoring point and three phase point are along crystal pulling side
To equidistantly distributed.
A further improvement of the present invention lies in that the spacing of the first temperature monitoring point and second temperature monitoring point and three phase point is
2cm-20cm。
A further improvement of the present invention lies in that the position of the first temperature monitoring point and second temperature monitoring point is in crystal pulling process
In remain unchanged.
A further improvement of the present invention lies in that according to the temperature T of the first temperature monitoring point1With the temperature of second temperature monitoring point
Spend T2And the temperature T of three phase point3, due toApparent strong linear relationship is presented with the convexity h in long crystal boundary face, therefore logical
It crossesThe variation of the long brilliant interface shape of prediction.
The present invention has following beneficial technical effect:
The method of long brilliant interface shape in a kind of on-line monitoring czochralski crystal growing furnace provided by the invention, during crystal pulling,
By monitoring the temperature of two monitoring points of crystal side wall, and the temperature of three phase point is combined, conveniently can accurately predict crystal pulling
The variation of long crystalline substance interface shape, provides guidance for the adjustment of crystal growing technology in journey, the final semiconductor monocrystal for obtaining high quality.
Detailed description of the invention
Fig. 1 is the schematic diagram of temperature monitoring point of the present invention arrangement.
Fig. 2 is the schematic diagram of long brilliant interface shape.
Fig. 3 illustrates intention for the relational result of the long brilliant interface shape of the present invention and φ.
In figure: 1- the first temperature monitoring point；2- second temperature monitoring point；3- three phase point；4- high temperature crystal；5- melt；6-
Long crystal boundary face.
Specific embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings.
As shown in Figure 1, a kind of method for monitoring long brilliant interface shape in czochralski crystal growing furnace on-line provided by the invention, the party
Method includes: to arrange two temperature monitoring points, respectively the first temperature monitoring point 1 and second temperature monitoring in 4 side wall of high temperature crystal
Point 2.Particularly, spacing H is equal between the first temperature monitoring point 1 and second temperature monitoring point 2 and three phase point 3, is 2-20cm.?
During entire crystal pulling, the position of the first temperature monitoring point 1 and second temperature monitoring point 2 is remained unchanged.The shape in long crystal boundary face
It is generally described by the convexity h in long crystal boundary face, as shown in Figure 2.
During crystal pulling, according to the temperature T of the first temperature monitoring point 11With the temperature T of second temperature monitoring point 22And
The temperature T of three phase point 33, pass throughPredict the variation of long 6 shape of crystal boundary face.
For the feasibility and validity for illustrating this programme, numerical simulation is carried out to long brilliant situations different during crystal pulling,
Analog result is as shown in Figure 3, it is found thatApparent strong linear relationship is presented with the convexity h in long crystal boundary face, i.e., it is logical
It crossesIt can accurately predict the variation of long brilliant interface shape.
The acquisition of temperature measuring point temperature of the invention, can there is many modes, such as contact thermography or non-contact temperature measuring.Ability
All deformations that the technical staff in domain directly can export or associate from present disclosure, are considered as the present invention
Protection scope.
Claims (5)
1. a kind of method of long brilliant interface shape in on-line monitoring czochralski crystal growing furnace, which is characterized in that this method comprises: in high temperature
Crystal (4) side wall arranges two temperature monitoring points, respectively the first temperature monitoring point (1) and second temperature monitoring point (2), and ties
The temperature of three phase point (3) is closed, predicts the variation of long crystal boundary face (6) shape between high temperature crystal (4) and melt (5).
2. the method for long brilliant interface shape, feature exist in a kind of on-line monitoring czochralski crystal growing furnace according to claim 1
In the first temperature monitoring point (1) and second temperature monitoring point (2) and three phase point (3) are along crystal pulling direction equidistantly distributed.
3. the method for long brilliant interface shape, feature exist in a kind of on-line monitoring czochralski crystal growing furnace according to claim 2
In the spacing of the first temperature monitoring point (1) and second temperature monitoring point (2) and three phase point (3) is 2cm-20cm.
4. the method for long brilliant interface shape, feature exist in a kind of on-line monitoring czochralski crystal growing furnace according to claim 1
In the position of the first temperature monitoring point (1) and second temperature monitoring point (2) remains unchanged during crystal pulling.
5. the method for long brilliant interface shape, feature exist in a kind of on-line monitoring czochralski crystal growing furnace according to claim 1
According to the temperature T of the first temperature monitoring point (1)1With the temperature T of second temperature monitoring point (2)2And the temperature of three phase point (3)
T3, due toThere is strong linear relationship with the convexity h in long crystal boundary face, therefore pass throughPredict long crystal boundary face (6) shape
The variation of shape.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810690392.7A CN108950679B (en) | 2018-06-28 | 2018-06-28 | Method for on-line monitoring shape of long grain boundary surface in czochralski crystal growing furnace |
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| CN201810690392.7A CN108950679B (en) | 2018-06-28 | 2018-06-28 | Method for on-line monitoring shape of long grain boundary surface in czochralski crystal growing furnace |
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| CN108950679A true CN108950679A (en) | 2018-12-07 |
| CN108950679B CN108950679B (en) | 2020-04-28 |
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Citations (10)
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|---|---|---|---|---|
| JPH05148080A (en) * | 1991-11-28 | 1993-06-15 | Kyushu Electron Metal Co Ltd | Method for growing single crystal |
| CN1320724A (en) * | 2000-04-26 | 2001-11-07 | 三菱麻铁里亚尔硅材料株式会社 | Single crystal and melt solid-liquid interface shape and single crystal point defect distribution simulation method |
| JP2004018324A (en) * | 2002-06-18 | 2004-01-22 | Sumitomo Mitsubishi Silicon Corp | Method of predicting pulling condition of pure silicon single crystal |
| CN1721586A (en) * | 2005-05-13 | 2006-01-18 | 中国科学院上海硅酸盐研究所 | A kind of fuse-elements crystal real-time viewing system |
| CN1737216A (en) * | 2004-06-07 | 2006-02-22 | Memc电子材料有限公司 | Method and apparatus for growing silicon crystal by controlling melt-solid interface shape |
| CN101037794A (en) * | 2005-12-30 | 2007-09-19 | 斯尔瑞恩公司 | Method for producing high quality silicon single crystal and silicon single crystal wafer made by using the same |
| CN101445954A (en) * | 2007-11-26 | 2009-06-03 | 北京有色金属研究总院 | Method for controlling temperature gradient and thermal history of a crystal-melt interface in growth process of czochralski silicon monocrystal |
| CN105401212A (en) * | 2015-12-02 | 2016-03-16 | 上海超硅半导体有限公司 | Single crystal silicon growth control method |
| CN107109687A (en) * | 2014-12-30 | 2017-08-29 | Lg矽得荣株式会社 | The crystal growth system and method for ingot interface shape can be controlled |
| CN107955965A (en) * | 2017-11-22 | 2018-04-24 | 邢台晶龙电子材料有限公司 | A kind of method that vertical pulling method prepares monocrystalline silicon |
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2018
- 2018-06-28 CN CN201810690392.7A patent/CN108950679B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05148080A (en) * | 1991-11-28 | 1993-06-15 | Kyushu Electron Metal Co Ltd | Method for growing single crystal |
| CN1320724A (en) * | 2000-04-26 | 2001-11-07 | 三菱麻铁里亚尔硅材料株式会社 | Single crystal and melt solid-liquid interface shape and single crystal point defect distribution simulation method |
| JP2004018324A (en) * | 2002-06-18 | 2004-01-22 | Sumitomo Mitsubishi Silicon Corp | Method of predicting pulling condition of pure silicon single crystal |
| CN1737216A (en) * | 2004-06-07 | 2006-02-22 | Memc电子材料有限公司 | Method and apparatus for growing silicon crystal by controlling melt-solid interface shape |
| CN1721586A (en) * | 2005-05-13 | 2006-01-18 | 中国科学院上海硅酸盐研究所 | A kind of fuse-elements crystal real-time viewing system |
| CN101037794A (en) * | 2005-12-30 | 2007-09-19 | 斯尔瑞恩公司 | Method for producing high quality silicon single crystal and silicon single crystal wafer made by using the same |
| CN101445954A (en) * | 2007-11-26 | 2009-06-03 | 北京有色金属研究总院 | Method for controlling temperature gradient and thermal history of a crystal-melt interface in growth process of czochralski silicon monocrystal |
| CN107109687A (en) * | 2014-12-30 | 2017-08-29 | Lg矽得荣株式会社 | The crystal growth system and method for ingot interface shape can be controlled |
| CN105401212A (en) * | 2015-12-02 | 2016-03-16 | 上海超硅半导体有限公司 | Single crystal silicon growth control method |
| CN107955965A (en) * | 2017-11-22 | 2018-04-24 | 邢台晶龙电子材料有限公司 | A kind of method that vertical pulling method prepares monocrystalline silicon |
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Effective date of registration: 20210508 Address after: No.1000 Yunshui Road, Nicheng Town, Pudong New Area, Shanghai, 201306 Patentee after: ZING SEMICONDUCTOR Corp. Address before: Beilin District Xianning West Road 710049, Shaanxi city of Xi'an province No. 28 Patentee before: XI'AN JIAOTONG University |