CN111696876B - Bonding device and bonding method - Google Patents

Bonding device and bonding method Download PDF

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Publication number
CN111696876B
CN111696876B CN202010135241.2A CN202010135241A CN111696876B CN 111696876 B CN111696876 B CN 111696876B CN 202010135241 A CN202010135241 A CN 202010135241A CN 111696876 B CN111696876 B CN 111696876B
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bonding
substrate
plasma
die
tip
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CN111696876A (en
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高定奭
李恒林
金旼永
金度延
朴志焄
张秀逸
金光燮
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Semes Co Ltd
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Semes Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H—ELECTRICITY
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    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/808—Bonding techniques
    • H01L2224/80893—Anodic bonding, i.e. bonding by applying a voltage across the interface in order to induce ions migration leading to an irreversible chemical bond

Abstract

The invention discloses a bonding device and a bonding method, which can effectively bond a substrate and a bonding object (a tube core or a substrate) through anodic bonding while avoiding the gas trapping phenomenon of a bonding interface between the substrate and the bonding object. According to an embodiment of the present invention, a bonding method for bonding a bonding object including a die or a second substrate on a first substrate includes: hydrophilizing a bonding region on the first substrate to be bonded by generating plasma in the bonding region from respective plasma tips of one or more plasma devices; disposing the bonding object on the hydrophilized bonding region on the first substrate, and bringing the plasma tip into contact with an upper face of the bonding object; and bonding the bonding object on the first substrate by an anodic bonding heat treatment of applying a voltage between a first electrode in surface contact with a lower portion of the first substrate and a second electrode provided at the plasma tip.

Description

Bonding device and bonding method
Technical Field
The present invention relates to a bonding apparatus and a bonding method, and more particularly, to a bonding apparatus and a bonding method that can bond a die to a substrate or bond a substrate to a substrate without using a bonding medium including an adhesive film and a solder bump.
Background
In recent years, as the integration level of semiconductor devices increases, 3D packaging technology of three-dimensional stacked semiconductor devices has attracted attention. Representatively, techniques for commercializing 3D integrated circuits using through silicon vias (TSVs; through Silicon Via) are being studied. The 3D semiconductor may be manufactured through a die bonding process of stacking bonded TSV die.
Fig. 1 to 3 are diagrams showing a conventional die bonding process. Referring to fig. 1, in order to bond the TSV die (die) 3 to the main wafer (master wafer) 1, the lower bonding surface of the TSV chip 3a is provided with an adhesive film (adhesion film) 3b and a solder bump (solder bump) 3c as bonding media. The TSV die 3 provided with the adhesive film 3b and the solder bump 3c is transferred to the upper portion of the main wafer 1 by the bonding head 4, and after being aligned to the bonding position, is placed on the upper face of the main wafer 1 or the upper face of the TSV die (2) bonded to the main wafer 1.
The bonding process of the TSV die 3 includes a pre-bonding (pre-bonding) process and a post bonding (post-bonding) process. Referring to fig. 2, TSV die 3 is first bonded to main wafer 1 by a pre-bonding process that pressurizes and warms TSV die 3 on main wafer 1 by bond head 4. For pre-bonding of the TSV die 3, the bond head 4 has a tool for pressurizing and warming the TSV die 3 on the main wafer 1. If the TSV die 3 is pre-bonded to the main wafer 1, a main bonding process is performed, which thermally processes and pressurizes the TSV die 3 at a high temperature to cure the adhesive film 3b and the solder bump 3c, and bonds the TSV die 3 to the main wafer 1 entirely by thermal pressing, which takes the adhesive film 3b and the solder bump 3c as a medium.
Referring to fig. 3, tsv die 2, 3, 4 are sequentially stacked, pre-bonded, and primary bonded one by one to primary wafer 1. The conventional die bonding method must undergo a main bonding process in which the die is pressurized and heated using the bonding head 4 each time the die is bonded one by one, and the die is heat-sealed by a high-temperature heat treatment. Therefore, the time required for the main bonding process increases in proportion to the number of dies bonded to the main wafer 1.
In addition, as the pitch between TSVs, i.e., I/O pitch (pitch), tapers, when high temperature/high load bonding is performed to fully bond the stacked TSV die, defects may occur, the solder bumps of which are swept (sweep) and connect with surrounding solder bumps resulting in shorts. Thus, it is difficult to use a bonding medium. To avoid this, the size of the solder bump needs to be made smaller because of physical limitations, which cannot be a complete countermeasure. In addition, in the conventional die bonding method, as the main wafer and the TSV chip are thinner, damage such as cracks may occur on the TSV chip and the main wafer during the main bonding process at high temperature/high load.
In the main bonding process of the die, a high temperature annealing (annealing) method, an anodic bonding (anodic bonding) method, and the like may be applied. The anodic bonding method is a method of performing main bonding by applying a voltage to a bonding object (die or substrate) while applying pressure using an electrode having a 2-dimensional planar shape. In the anodic bonding method, first, an edge portion of a bonding object in a bonding interface between a substrate and the bonding object is sealed, thereby generating a gas trapping (gas-trapping) phenomenon in which gas is trapped at the bonding interface of the substrate and the bonding object. This gas trapping phenomenon reduces the binding force of the bonding interface and may become a cause of semiconductor failure. In addition, when the anodic bonding process is performed under normal pressure, a serious gas trapping phenomenon occurs, and therefore, it is necessary to perform the anodic bonding process under vacuum (or low pressure) conditions, and for this reason, it is necessary to prepare a limitation such as a vacuum chamber.
Disclosure of Invention
Problems to be solved by the invention
The invention provides a bonding device and a bonding method, which can effectively bond a substrate and a bonding object (a tube core or a substrate) through anodic bonding while avoiding the gas trapping phenomenon of a bonding interface between the substrate and the bonding object.
The present invention also provides a bonding apparatus and a bonding method capable of performing anodic bonding of a substrate and a bonding target using a plasma tip at normal temperature and pressure without using a vacuum chamber in a non-contact manner.
In addition, the present invention provides a bonding apparatus and a bonding method capable of bonding a die to a substrate or bonding the substrate with a uniform bonding force without using a bonding medium such as an adhesive film (adhesive film) and a solder bump (solder).
In addition, the invention provides a bonding device and a bonding method, which can be used as a plasma tip in a pre-bonding process for hydrophilizing a substrate and/or a bonding object and a main bonding process by anodic bonding after pre-bonding.
The present invention also provides a bonding apparatus and a bonding method capable of efficiently performing die bonding by anodic bonding by a plasma tip, and also efficiently anodic bonding a large-area substrate while moving the plasma tip along a moving path.
Solution for solving the problem
A bonding method according to an aspect of the present invention, which bonds a bonding object including a die or a second substrate on a first substrate, includes: disposing the bonding object on the first substrate; and bonding the bonding object on the first substrate by anodic bonding that forms a voltage between the first substrate and the bonding object. Bonding the bonding object, comprising: placing a plasma tip of a plasma device capable of performing plasma discharge on an upper portion of the bonding object; and
an electric potential for anodic bonding is applied to the plasma tip to anodically bond the bonding object to the first substrate. The bonding method according to the embodiment of the invention can further comprise the following steps: hydrophilizing at least one of a bonding region on the first substrate and a bonding surface of the bonding object by plasma treatment before the bonding object is arranged on the first substrate; and
before the bonding object is arranged on the first substrate, a water film is formed by spraying liquid on at least one of a bonding region on the first substrate and a bonding surface of the bonding object.
The disposing the bonding object on the first substrate may include: the bonding object is pre-bonded on the first substrate by a bonding force of a water film formed between the first substrate and the bonding object.
The hydrophilizing comprises: and generating plasma through the plasma tip, and hydrophilizing at least one of a bonding area on the first substrate and a bonding surface of the bonding object.
Bonding the bonding object may include: the potential is formed at the plasma tip in a state where the plasma tip is spaced apart from an upper surface of the bonding object by a predetermined distance, and a voltage for anodic bonding is applied between the bonding object and the first substrate in a non-bonding manner. The prescribed distance is greater than 0mm and less than 1cm.
Applying a voltage for the anodic bonding may include: a potential difference for the anodic bonding is formed between a first electrode in contact with a lower surface of the first substrate and a second electrode provided at the plasma tip. The anodic bonding may be performed at normal temperature and normal pressure, and the potential difference may be 100V or more.
The bonding method according to the embodiment of the invention can further comprise the following steps: the bonding object supported on the support unit is picked up by a bonding head and transferred to an upper region of the first substrate supported on the bonding stage. The hydrophilizing may be performed by performing plasma treatment on the bonding surface of the bonding object through the plasma tip during transfer of the bonding object.
Bonding the bonding object may include: the anodic bonding is performed while moving the plasma tip along an X-axis parallel to a bonding surface of the bonding object and a Y-axis perpendicular to the X-axis, and one or more of the bonding objects are bonded on the first substrate provided as a large-area substrate or on the first substrate provided as a large-area substrate.
According to another aspect of the present invention, there is provided a bonding apparatus for bonding a bonding object including a die or a second substrate on a first substrate, comprising: a plasma device provided with a plasma tip capable of performing plasma discharge; and
a voltage forming section for forming a voltage for anodic bonding between the first substrate and the bonding object disposed on the first substrate,
The voltage forming section is configured to apply a potential for the anodic bonding to the plasma tip located at an upper portion of the bonding object.
The voltage forming portion may form a potential difference for anodic bonding between a first electrode in contact with a lower surface of the first substrate and a second electrode provided at the plasma tip.
The bonding device according to the embodiment of the invention may further include: and a driving unit for moving the plasma device in the horizontal direction and the vertical direction. According to the bonding apparatus of the embodiment of the present invention, the anode bonding is performed while the plasma is moved in the horizontal direction and the up-down direction of the tip by the driving section, and the bonding object provided for a large-area substrate is bonded on the first substrate or the bonding object is bonded on the first substrate provided for a large-area substrate.
The bonding device according to the embodiment of the invention may further include: a plasma processing unit configured to hydrophilize at least one of a bonding region on the first substrate and a bonding surface of the bonding target by plasma processing; and a wetting device that sprays a liquid to at least one of the bonding region on the first substrate and the bonding surface of the bonding target to form a water film.
The plasma processing unit generates plasma by the plasma tip, and hydrophilizes at least one of a bonding region on the first substrate and a bonding surface of the bonding target.
The plasma device is configured to apply a voltage for anodic bonding between the bonding object and the first substrate in a non-bonding manner by forming the potential at the plasma tip in a state in which the plasma tip is spaced apart from an upper face of the bonding object by a prescribed distance.
The bonding device according to the embodiment of the invention may further include: a bonding stage supporting the first substrate; and a bonding head picking up the bonding object supported on the supporting unit and transferring the bonding object to an upper region of the first substrate supported on the bonding stage. The plasma device is configured to perform plasma treatment on a bonding surface of the bonding object through the plasma tip to perform hydrophilization during transfer of the bonding object.
According to still another aspect of the present invention, there is provided a bonding apparatus for bonding a bonding object including a die or a second substrate on a first substrate, characterized by comprising: a plasma device provided with a plasma tip capable of performing plasma discharge, the plasma tip being provided with an electrode for forming a voltage for anodic bonding between the first substrate and the bonding object, configured to form a voltage for anodic bonding between the first substrate and the bonding object by applying a potential to the electrode, the bonding object being bonded on the first substrate.
Effects of the invention
According to the bonding device and the bonding method provided by the embodiment of the invention, when the substrate and the bonding object (the tube core or the substrate) are bonded, the bonding of the substrate and the bonding object is effectively realized through anodic bonding while the gas trapping phenomenon of the bonding interface between the substrate and the bonding object is avoided.
In addition, according to the embodiment of the present invention, the substrate and the bonding object can be anodically bonded using the plasma tip at normal temperature and pressure in a non-contact manner without using a vacuum chamber.
In addition, according to the embodiment of the present invention, the die can be bonded to the substrate or the bonded substrate with a uniform bonding force without using a bonding medium such as an adhesive film and a solder bump.
In addition, according to the embodiment of the present invention, the plasma tip can be used as both a pre-bonding process for hydrophilizing a substrate and/or a bonding object and a main bonding process by anodic bonding after the pre-bonding.
In addition, according to the embodiment of the present invention, it is possible to efficiently anodically bond a large-area substrate while efficiently performing die bonding by anodic bonding of a plasma tip, with the plasma tip being moved along a moving path.
The effects of the present invention are not limited to the effects described above. Those of ordinary skill in the art will appreciate the effects not mentioned in the sweep through the present invention and the accompanying drawings.
Drawings
Fig. 1 to 3 are diagrams showing a conventional die bonding process.
Fig. 4 is a flow chart of a die bonding method according to an embodiment of the present invention.
Fig. 5 is a side view schematically illustrating a die bonding apparatus according to an embodiment of the present invention.
Fig. 6 is a plan view schematically illustrating a die bonding apparatus according to an embodiment of the present invention.
Fig. 7 is a plan view schematically showing a supporting unit constituting a die bonding apparatus according to an embodiment of the present invention, and an arrangement of an atmospheric pressure plasma apparatus and a bonding stage.
Fig. 8 is a perspective view schematically showing an atmospheric pressure plasma device constituting a die bonding device according to an embodiment of the present invention.
Fig. 9 is a sectional view schematically showing an atmospheric pressure plasma device constituting a die bonding device according to an embodiment of the present invention.
Fig. 10 is a drawing for describing the operation of an atmospheric pressure plasma device constituting a die bonding device according to an embodiment of the present invention.
Fig. 11 to 13 are drawings for describing an operation of a wetting device constituting a die bonding device according to an embodiment of the present invention.
Fig. 14 is a diagram illustrating pre-bonding a plurality of dies to a substrate, according to an embodiment of the invention.
Fig. 15 is a diagram showing a plasma device constituting a die bonding device according to an embodiment of the present invention.
Fig. 16 is a diagram illustrating an operation of the plasma apparatus shown in fig. 15.
Fig. 17 is a flowchart of a bonding method according to another embodiment of the present invention.
Fig. 18 is a conceptual diagram for describing a bonding method according to an embodiment of the present invention.
Fig. 19 is a schematic view of the plasma processing section shown in fig. 18.
Fig. 20 is a conceptual diagram for describing a bonding method according to another embodiment of the present invention.
Fig. 21 is a schematic view of a second plasma apparatus constituting the plasma processing section shown in fig. 20.
Fig. 22 to 26 are conceptual diagrams for describing a die bonding method according to an embodiment of the present invention.
Fig. 27 is a schematic side view of a die bonding apparatus according to another embodiment of the present invention.
Fig. 28 is a diagram for describing the operation of the die bonding apparatus according to the embodiment of fig. 27.
Fig. 29 is a schematic side view of a die bonding apparatus according to yet another embodiment of the present invention.
Fig. 30 is a side view of a plasma processing portion constituting a die bonding apparatus according to still another embodiment of the present invention.
Fig. 31 and 32 are diagrams showing an operation of the plasma processing section according to the embodiment of fig. 30.
Fig. 33 is a side view of a plasma processing portion constituting a die bonding apparatus according to still another embodiment of the present invention.
Fig. 34 is a diagram showing an operation of the plasma processing section according to the embodiment of fig. 33.
Reference numerals illustrate:
100: and a die bonding device.
110: and a supporting unit.
120: and a bonding stage.
130: and a frame.
132: and (5) transferring the rail.
134: a supporting part.
136: a channel.
140: and a bonding head.
142: and a carriage.
144: a ground plate.
150: and an inspection unit.
160: and a cleaning unit.
170: a plasma device.
170a: a first plasma device.
170b: and a second plasma device.
180: a wetting device.
190: an alignment checking part.
200: a track.
210: and a transfer device.
220. 241, 251: a plasma device. 221. 260: a first plasma device. 221a, 222a: a plasma tip.
222. 290: and a second plasma device.
230: and a heat treatment unit.
231: a heat treatment chamber.
232. 270: a first electrode.
233. 280, 300: and a second electrode.
234. 282, 302: and a voltage forming section.
235: and a lifting part.
240. 250: and a plasma processing unit.
241a, 251a, 262, 292: a plasma tip.
W: a semiconductor wafer.
D: a die.
MW: a substrate.
BA: and a bonding region.
P: a plasma region.
P2: plasma processing section.
Detailed Description
Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiment of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. Embodiments of the present invention are provided to more fully describe the present invention to those skilled in the art. Accordingly, the shapes of elements in the drawings are exaggerated to emphasize more explicit description.
The bonding method according to the embodiment of the present invention is a bonding method of bonding a bonding object (die or second substrate) on a first substrate by anodic bonding, in which a plasma tip is placed on top of the bonding object, and a potential for anodic bonding is applied to the plasma tip to anodically bond the bonding object on the first substrate. Since the cross-sectional area of the plasma tip is smaller than that of the electrode in the form of a 2-dimensional plane, a gas trapping phenomenon in which gas is trapped in the bonding interface of the first substrate and the bonding object can be avoided. In addition, when the plasma tip is separated from the upper surface of the bonding object by a few mm, a voltage for anodic bonding is formed to anodically bond the first substrate and the bonding object in a non-contact manner, so that the main bonding process is performed without applying pressure to the bonding object, thereby improving the bonding force between the first substrate and the bonding object while avoiding the gas trapping phenomenon.
In addition, according to the embodiment of the invention, considering the gas trapping problem, the limitation condition that the anode bonding is required to be performed in a vacuum chamber and a low-pressure chamber can be overcome, and the anode bonding is performed at normal temperature and normal pressure, so that the equipment cost and the process cost can be reduced. In addition, according to an embodiment of the present invention, at the time of the pre-bonding process, plasma is generated from the plasma tip to the first substrate and/or the bonding object, so that the substrate is bonded with the bonding object with a uniform bonding force without using a bonding medium such as an adhesive film (adhesion film) and a solder bump (solder bump), and the plasma tip is used for both the pre-bonding process and the anodic bonding main bonding process after the pre-bonding. Accordingly, when manufacturing a semiconductor of a fine I/O pitch, defects of sweep (sweep), short circuit, and the like of a solder bump can be avoided, and a main bonding process can be performed on a substrate without performing the main bonding process every time a die is bonded, thereby reducing the time required for the bonding process.
Hereinafter, it is noted that although the bonding method and the bonding apparatus according to the embodiments of the present invention are described taking as an example the die bonding method and the die bonding apparatus for bonding a die (e.g., a semiconductor chip or the like) on a substrate (e.g., a semiconductor substrate or a glass substrate or the like), the bonding apparatus and the bonding method of the present invention are not limited to the method for bonding a die on a substrate (first substrate) but also include the method for bonding a substrate (first substrate and second substrate).
In the specification of the present invention, bonding an object on a substrate includes bonding not only an object directly on an upper face of a substrate but also bonding another object on an upper face of an object to be bonded pre-bonded on a substrate or bonding a new object on an upper face of an object to be bonded stacked on an uppermost layer among pre-bonded objects stacked in a plurality of layers on a substrate.
Fig. 4 is a flow chart of a die bonding method according to an embodiment of the present invention. Referring to fig. 4, steps S10 and S20 are performed, which are performed by performing plasma treatment on the substrate and the die, respectively, to perform hydrophilization. That is, hydrophilization S10 is performed by plasma-treating a bonding region on a substrate to which a die is to be bonded, and hydrophilization S20 is performed by plasma-treating a bonding surface of the die to be bonded on the bonding region on the substrate.
When the dicing (dicing) process of separating the dies made on the semiconductor wafer supported on the support unit is completed, the dies are sequentially picked up by a bonding head (bonding head), and transferred to a bonding stage (bonding stage) side where a substrate (e.g., a main wafer) is supported. In an embodiment, the plasma of the die may be processed as the die is moved toward the bonding station by the bonding head. As another example, the die may be transferred to a separate plasma processing chamber for plasma processing.
The plasma treatment of the substrate may be performed while the substrate is supported on the bonding stage, and the substrate may be moved onto the bonding stage by the substrate carrying device after the plasma treatment in a separate plasma treatment chamber. The plasma treatment of the substrate and the plasma treatment of the die may be performed simultaneously by a plurality of plasma devices, or may be performed sequentially by one plasma device.
The plasma treatment of the substrate and/or die may be performed by an atmospheric pressure (normal pressure) plasma device or a vacuum (low pressure) plasma device. Hydrophilization of the substrate and/or die may be performed by a single plasma treatment, or may be performed by sequential plasma treatments such as reactive ion etching (ReactiveIon Etching) plasma treatment followed by surface activation (Surface Activation) plasma treatment.
After plasma treatment of the substrate and die, the substrate and/or die may be rinsed as needed S30. That is, a water film (liquid film) may be formed by spraying a liquid including water onto the hydrophilized bonding regions on the substrate (first substrate) and/or the hydrophilized bonding surfaces of the die. The liquid supplied to the substrate or die for forming the Water film is, for example, deionized Water (DIW). When a sufficient bonding force can be obtained only by plasma treatment or when a desired bonding force is obtained by anodic bonding heat treatment at a plasma tip by plasma treatment, a rinse treatment and/or a hydrophilization treatment may be omitted, depending on bonding interface substances (semiconductor, metal, glass, etc.), a plasma treatment type, a main bonding process method, etc. of the first substrate and the bonding object (die or second substrate).
After the bonding head picking up the die moves to the upper region of the bonding stage, the die is lowered so that the bonding face of the die is in contact with the bonding region on the substrate. When the bonding surface of the die is arranged in contact with the bonding region on the substrate, the die S40 may be pre-bonded (pre-bonded) on the substrate by a bonding force (hydrogen bonding force) between the hydrophilized bonding surface of the die and the liquid film even if the die is not pressurized or warmed. At this time, the die may be pressurized and heated on the substrate under an appropriate pressure (for example, 1 to 2 bar) as needed.
The bond head returns to the diced semiconductor wafer side again, picking up a new die to be bonded later, and the process repeats steps S10 through S40 as described above. When the die is pre-bonded to the substrate, the die-pre-bonded substrate may be subjected to an anodic bonding heat treatment (Anodic bonding annealing) while the die S50 is primary bonded (post bonding) in substrate units.
In an embodiment, the anodic bonding heat treatment may be performed at normal temperature or at a temperature of 200 ℃ or less. For the anodic bonding heat treatment, a voltage of 100V to 1kV, or a voltage greater than 1kV, may be applied between the substrate and the die. The anodic bonding heat treatment for the primary bonding may be performed by a heat treatment unit on a bonding stage supporting the substrate, or may be performed by a heat treatment unit provided in a separate heat treatment chamber.
Fig. 5 is a side view schematically illustrating a die bonding apparatus according to an embodiment of the present invention. Fig. 6 is a plan view schematically illustrating a die bonding apparatus according to an embodiment of the present invention. Referring to fig. 5 and 6, the die bonding apparatus 100 according to an embodiment of the present invention includes a support unit 110, a bonding stage 120, a bonding head 140, a plasma processing part 170, a wetting device 180, and a plasma device 220.
The support unit 110 supports the semiconductor wafer W whose die are diced. The bonding stage 120 supports a substrate MW. The support unit 110 and the bonding stage 120 may include a chuck (e.g., an electrostatic chuck) for supporting the semiconductor wafer W and the substrate MW. The bonding head 140 is used to pick up the die supported on the supporting unit 110 and transfer to the bonding region on the substrate MW.
The bonding head 140 may reciprocate between an upper region of the support unit 110 and an upper region of the bonding stage 120 along the transfer rail 132. The transfer rail 132 may be provided on the frame 130 supported by the support 134. In the following description, a direction from the support unit 110 toward the bonding stage 120 is referred to as a first direction X, a direction perpendicular to the first direction Y on a plane parallel to the semiconductor wafer W and the substrate MW is referred to as a second direction Y, and an up-down direction perpendicular to the first direction X and the second direction Y is referred to as a third direction Z.
The transfer rails 132 are arranged along the first direction X. The bond head 140 is movable in a first direction X by a carriage 142, the carriage 142 being movably coupled to the transfer rail 132. The frame 130 has a passage 136 formed therein for transferring the bond head 140. The bonding head 140 is supported by a pair of transfer rails 132 provided at both sides of the passage 136 formed on the frame 130, and can be stably moved in the first direction X.
The bonding head 140 may be driven to be lifted in the third direction Z by a lifting unit 140a mounted on the carriage 142. The lower end of the bond head 140 is provided with a ground plate 144. The bond head 140 may pick up dies on the semiconductor wafer W by vacuum suction or the like. When the bonding head 140 picks up the die, the inspection portion 150 provided to the frame 130 performs a position inspection of the die picked up by the bonding head 140. The inspection part 150 may inspect the position of the die based on vision (vision).
The cleaning unit 160 provided to the frame 130 cleans a lower face (bonding face) of the die picked up by the bonding head 140. The cleaning unit 160 may be disposed between the support unit 110 and the plasma device 170. The cleaning unit 160 may be a cleaning device coupled with an air spraying unit, a vacuum pumping unit, and an ionizer. To increase the process speed, the cleaning unit 160 performs a cleaning process while the die picked up by the bond head 140 is moving.
Fig. 7 is a plan view schematically showing a supporting unit constituting a die bonding apparatus according to an embodiment of the present invention, and a plasma device and a bonding stage arranged. Fig. 8 is a perspective view schematically showing an atmospheric pressure plasma device constituting a die bonding device according to an embodiment of the present invention. Fig. 9 is a sectional view schematically showing an atmospheric pressure plasma device constituting a die bonding device according to an embodiment of the present invention.
Referring to fig. 7 to 9, the plasma processing part 170 may be disposed between the support unit 110 and the bonding stage 120 on the transfer path DP of the die D. The plasma processing unit 170 is configured to perform hydrophilization by performing plasma processing on the die, and may perform hydrophilization by performing plasma processing on the bonding surface of the die being transferred through the bonding head 140.
According to an embodiment of the present invention, when the die D is transferred to the bonding stage 120 by the bonding head 140, the lower surface (bonding surface) of the die D may be hydrophilized by performing atmospheric pressure plasma treatment in a fly-away type, and the transfer speed of the die D may be reduced without hydrophilizing the die D, so that the pre-bonding process time may be shortened.
In an embodiment, the plasma processing section 170 may be an atmospheric pressure (normal pressure) plasma device. Accordingly, the plasma device 170 may also be a vacuum plasma device. A plasma region P including a hydrophilic group is formed at an upper portion of the plasma device 170. The plasma region P may be formed to overlap with the transfer path DP of the die D.
The bonding surface of die D may be hydrophilized by hydrophilic groups formed by plasma device 170 while being transferred to the bonding stage 120 side. The hydrophilic group may include hydrogen or hydroxyl groups. The plasma device 170 may be, for example, an atmospheric oxygen/argon plasma device, an atmospheric water vapor plasma device.
The plasma apparatus 170 may include: a main body 172; a gas supply part 174 for introducing a process gas into the main body 172; and an RF power applying part 176 for forming plasma by exciting the process gas. A transfer passage 172a for transferring the process gas supplied from the gas supply part 174 to the upper part is formed in the main body 172. RF power supplied from the RF power supply section 176b is applied to the electrode 176a insulated by the insulator 178 through the RF power application section 176.
An opening 172b for forming a plasma gas excited by RF power in the plasma region P is formed at an upper portion of the body 172. An opening 172b formed at an upper portion of the body 172 corresponds to a plasma tip. The length of the opening 172b may be the same or greater than the width in the second direction Y of the die D, so that the hydrophilization treatment is performed over the entire width in the second direction Y of the die D. The plasma device 170 may control the operation state through the sensing part 178a and the control part 178 b.
Fig. 10 is a diagram for describing an operation of a plasma device constituting a die bonding apparatus according to an embodiment of the present invention. Referring to fig. 7 to 10, the sensing part 178a senses whether the die D is located within the plasma processing section P2 of the plasma apparatus 170. The control part 178b stops the operation of the plasma device 170 when the die D is located in the section P1 before entering the plasma processing section P2 or the section P3 passing through the plasma processing section P2, and may generate plasma by starting the RF power supply part 176b and the gas supply part 174 of the plasma device 170 when the die D is located in the plasma processing section P2.
When the die D enters the plasma start position P21 of the plasma processing section P2, the plasma device 170 may be activated by the control unit 178b to form a plasma region P on the transfer path of the die D. When the die D passes the plasma end position P22 of the plasma processing section P2, the operation of the plasma apparatus 170 is stopped.
In order to pass the lower face (bonding face) of the die D through the plasma region P, the transfer height of the die D and the position (upper face height) of the plasma device 170 may be determined such that the up-down gap G between the die D and the plasma device 170 is smaller than the thickness T of the plasma region P exposed to the upper portion of the plasma device 170. The plasma region P may be formed to be several mm thick, in which case the up-down gap G between the die D and the plasma device 170 may be designed to be a distance of several mm less than the thickness of the plasma region P.
The plasma start position P21 and the plasma end position P22 can be set so that the bonding surface of the die D is completely hydrophilic without arc discharge to the bonding head 140 by plasma. If the plasma processing section P2 is set too wide, the risk of arcing on the bond head 140 increases, and the start-up time of the plasma device 170 is too long, thereby increasing the process cost. In addition, when the plasma processing section P2 is set too narrow, the portions of the front and rear end edge portions of the bonding surface of the die D are not hydrophilized, and the hydrophilized state of the bonding surface of the die D may become uneven in the first direction X.
In an embodiment, the plasma start position P21 and the plasma end position P22 may be set to be a position where the front end portion of the ground plate 144 starts to enter the plasma region P and a position where the rear end portion of the ground plate 144 starts to leave the plasma region P, respectively. The transfer speed of the die D in the plasma processing section P2 may be set to be equal to or slower than the transfer speed of the die D before and after the plasma processing section P2.
When hydrophilization of the bonding surface of the die D is sufficiently performed even without lowering the transfer speed of the die D in the plasma processing section P2, the die D can be transferred without changing the speed in the plasma processing section P2 in order to improve productivity. When the transfer speed of the die D is not reduced in the plasma processing section P2, if the hydrophilic effect cannot be obtained from the bonding surface of the die D, the transfer speed of the bonding head 140 may be reduced in the plasma processing section P2. In the case of reducing the transfer speed of the die D, it is also possible to reduce the transfer speed of the bond head 140 to a set distance in advance before the die D enters the plasma processing section P2 by controlling the transfer speed of the bond head 140 in synchronization with the plasma processing section P2.
Fig. 11 to 13 are drawings for describing an operation of a wetting device constituting a die bonding device according to an embodiment of the present invention. Fig. 11 shows a state in which the wetting device 180 is located in the retreated area, and fig. 12 shows a state in which the wetting device 180 is located in an upper area of the bonding area BA for performing a wetting process in the bonding area BA on the substrate MW.
Referring to fig. 5, 6, and 11 to 13, the wetting device 180 moves from the retracted position to the upper region of the bonding stage 120, supplies a liquid DIW including water to the die D on the substrate MW supported on the bonding stage 120 and the bonding region BA to be bonded, and forms a liquid film (water film) on the bonding region BA. In the present specification, forming a liquid film by spraying a liquid such as deionized water onto a "substrate" includes forming the liquid film directly on an upper surface of the substrate or forming the liquid film on an upper surface of a die stacked on one or more layers of the substrate.
The wetting device 180 may be transferred along the transfer rail 132 between an upper region of the bonding stage 120 and a retreating region distant from the bonding stage 120. The wetting device 180 may be moved in the first direction X by a moving unit 182 movably coupled on the transfer rail 132. The wetting apparatus 180 may be driven to rise and fall in the third direction Z by a rising and falling portion 180a mounted on the moving unit 182.
In an embodiment, the wetting device 180 may be a patterning device of a spray (jetting) type adapted to a piezoelectric (piezo) type for forming a liquid film at the bonding area BA by spraying deionized water. When the die D is transferred from the support unit 110 to the bonding stage 120, the wetting device 180 may perform a wetting process of locally forming a water film in the bonding area BA on the substrate MW.
When a liquid film DL is formed on the bonding region on the substrate MW by the wetting device 180 during the transfer of the die D to the bonding stage 120, as shown in fig. 13, the wetting device 180 moves from the upper region of the bonding stage 120 and retreats to the standby position (retreated position) so that the bonding head 140 enters the bonding region on the substrate MW.
After the bond head 140 moves to the upper portion of the substrate MW as the wetting device 180 moves toward the back-off region, the die D is lowered so as to contact the bonding region BA on the substrate MW. In the case where the bonding surface of the die D is in contact with the bonding area BA, if the bonding head 140 releases the picked-up state of the die D, the die D is stacked on the substrate MW, and the die D is pre-bonded by a bonding force (hydrogen bonding force) between the hydrophilized bonding surface of the die D and the liquid film DL.
As another example, wetting apparatus 180 may spray deionized water onto the bonding surface of die D. For example, the wetting apparatus 180 may spray deionized water upward through a nozzle provided in such a way as to face upward. Since the bonding surface of the die D is hydrophilized by the plasma treatment, deionized water may be formed on the hydrophilized bonding surface of the die D to form a water film. In addition, a water film may be formed on the bonding area on the substrate MW and the bonding surface of the die D, respectively, by using one or more wetting devices 180.
The rinsing process may be omitted if sufficient pre-bonding force can be obtained by plasma treatment of the substrate MW and die D alone. When the rinsing process is omitted, die D is pre-bonded on substrate MW by bonding forces between the hydrophilized bonding surface of die D and the hydrophilized bonding regions on substrate MW.
Referring again to fig. 5 and 6, the alignment checking part 190 recognizes the positions of the die D and the substrate MW based on vision (vision) for aligning the die D and the substrate MW, and determines a bonding region on the substrate MW. The alignment checking part 190 may be movable in the first direction X along the transfer rail 132, and fixedly provided on the frame 130. Based on the positions of die D and substrate MW, the placement of die D and substrate MW and the deionized water application position of wetting apparatus 180 may be controlled. The bonding stage 120 may be movable along a guide rail 122, the guide rail 122 being arranged along the second direction Y. The position of the substrate MW can be adjusted in the left-right direction (second direction) by the bonding stage 120.
Fig. 14 is a diagram illustrating pre-bonding a plurality of dies to a substrate, according to an embodiment of the invention. When the plurality of dies D are pre-bonded onto the substrate MW by sequentially repeating the process as described above for the plurality of dies D, a voltage is applied between the substrate MW and the dies D, and the dies D are primarily bonded onto the substrate MW by an anodic bonding heat treatment. The anodic bonding heat treatment may be performed by transferring the substrate MW to a heat treatment unit (not shown) by a substrate carrying device (not shown), or may be performed on the bonding stage 120.
Fig. 15 is a diagram showing a plasma device constituting a die bonding device according to an embodiment of the present invention. Fig. 16 is a diagram illustrating an operation of the plasma apparatus shown in fig. 15. Referring to fig. 15 and 16, the plasma device 220 may be hydrophilized by sequentially performing plasma treatment on the bonding region of the substrate MW. The plasma device 220 may include a first plasma device 221 and a second plasma device 222.
The first plasma device 221 may be a reactive ion etching plasma device. The first plasma device 221 may generate plasma using the plasma tip 221a to etch the bonding region of the smooth substrate MW by a high frequency (RF) RIE plasma process, remove contaminants, and oxidize the surface. The second plasma device 222 may be a surface-activated plasma device that attaches hydrophilic radicals to the bonding region of the substrate MW to improve chemical reactivity and pre-bonding force.
The first plasma device 221 and the second plasma device 222 can be moved in the first direction X, the second direction Y, and the third direction Z by the driving units 223 to 228. In the embodiment, the first plasma device 221 and the second plasma device 222 may be moved in the first direction X by the moving body 227 coupled to the transfer rail 228, and may be coupled to the upper body 225 driven by the first driving unit 226 of the moving body 227 and moved in the second direction Y. The first plasma device 221 and the second plasma device 222 are coupled to a lower body 223 driven by a second driving unit 224 of an upper body 225, and are lifted and lowered in the third direction Z.
The first plasma device 221 and the second plasma device 222 may be arranged side by side at a lower portion of the lower body 223. As shown in fig. 16, the first plasma device 221 and the second plasma device 222 may sequentially perform plasma processing on the upper surface of the substrate MW while moving in the planar direction of the substrate MW. The substrate MW may be first subjected to RIE plasma processing by the first plasma apparatus 221 and then subjected to surface activation plasma processing by the second plasma apparatus 222.
In the main bonding step, the first plasma device 221 and/or the second plasma device 222 moves the plasma tips 221a and 222a in the X-axis and Y-axis directions parallel to the bonding surface between the substrate MW and the bonding object (die or substrate) by the driving section, and the anodic bonding heat treatment is performed, and the present invention is also applicable to a substrate MW provided as a large-area substrate having a very wide area than the plasma tips 221a and 222a or a bonding object (large-area die or substrate) provided as a large-area substrate. By the anodic bonding heat treatment, the bonding interface between the substrate MW and the die D is heated and cured, so that the die D is primarily bonded to the substrate MW. The anodic bonding heat treatment may be performed at normal temperature to 300 ℃. For the anodic bonding heat treatment, a voltage of 100V to several kV (direct current or alternating current voltage) may be applied between the electrode of the substrate MW and the electrodes of the plasma tips 221a, 222 a.
Since the cross-sectional area of the plasma tip is smaller than that of the electrode in the form of a 2-dimensional plane, a gas trapping phenomenon in which gas is trapped in the bonding interface of the first substrate and the bonding object can be avoided. In addition, when the plasma tips 221a and 222a are spaced apart from the upper surface of the bonding object by several mm, a voltage for anodic bonding is formed to anodically bond the first substrate and the bonding object in a non-contact manner, so that the main bonding process is performed without applying pressure to the bonding object, and the bonding force between the first substrate and the bonding object can be improved while avoiding the gas trapping phenomenon. In addition, since the anodic bonding process is performed in a non-contact manner, it is possible to prevent the surface of the bonding object from being contaminated or attaching impurities or foreign substances due to the contact of the anodic bonding electrode, and thus it is possible to improve the quality of the semiconductor.
In addition, according to the embodiment of the invention, considering the gas trapping problem, the limitation condition that the anode bonding is required to be performed in a vacuum chamber and a low-pressure chamber can be overcome, and the anode bonding is performed at normal temperature and normal pressure, so that the equipment cost and the process cost can be reduced. In addition, according to the embodiment of the invention, in the pre-bonding process, plasma is generated from the plasma tip to the first substrate and/or the bonding object, and in the post-pre-bonding main bonding process, the plasma tip is used for performing the anode bonding, so that the plasma tip is used in both the pre-bonding process and the anode bonding main bonding process, and the utilization rate of the plasma device can be improved.
Fig. 17 is a flowchart of a bonding method according to an embodiment of the present invention. Referring to fig. 17, the bonding method may include: transferring a bonding object (die or second substrate) onto a substrate (first substrate) S100; sequentially performing plasma processing on the substrate and the bonding object using a plasma tip (plasma tip) S200; performing a rinsing process on at least one of the substrate and the bonding object S300; pressurizing/heating the bonding object onto the substrate S500; and main bonding, applying voltage to the plasma tip, and performing anodic bonding heat treatment on the substrate and the bonding object.
Fig. 18 is a conceptual diagram for describing a bonding method according to an embodiment of the present invention. Fig. 19 is a schematic view of the plasma processing section shown in fig. 18. Referring to fig. 18 and 19, the plasma processing section is configured to sequentially perform plasma processing by one plasma device 260.
The plasma device 260 may include: a main body 261; a plasma tip 262 for locally applying plasma formed in the body 261 to a bonding region of the substrate and/or a bonding surface of the bonding object; gas supply sections 263, 264 for introducing a process gas (e.g., nitrogen/argon) into the main body 261; and an RF power applying part 265 for applying RF power of several GHz for forming plasma by exciting the process gas. Reference numerals 124, 266, 267 denote a heater for controlling the temperature of the substrate, a glass plate for controlling the distribution of RF power, and an ion trap plate for forming a uniform plasma, respectively.
The substrate MW is disposed on the first electrode 270, and the bonding object W is disposed on the substrate MW. In the primary bonding process, a first electrode (positive electrode) 270 for anodic bonding heat treatment may be disposed on the bonding stage 120. During the primary bonding process, a plasma device 260, a second electrode (negative electrode) 280 for anodic bonding heat treatment is formed at a lower edge portion of the plasma tip 262. The second electrode 280 may be narrower in cross-sectional area as it goes toward the lower portion. The diameter (width) of the lower end portion of the second electrode 280 may be several mm to several cm. The second electrode 280 may be directly coupled to the body 261, or may be coupled by using an insulator or the like as a medium.
During the primary bonding process, the voltage forming part 282 may apply a voltage for the anodic bonding heat treatment to the second electrode 280. In the case of using the plasma device 260 for hydrophilization of the substrate MW and/or the bonding object W during the pre-bonding process, the voltage forming portion 282 may apply a ground power to the second electrode 280 during the pre-bonding process and may apply a potential for forming an anodic bonding voltage to the second electrode 280 during the main bonding process.
The plasma device 260 may be movable in up-down, front-back, left-right (horizontal) directions by a driving part (not shown). Mainly during the bonding process, the plasma device 260 is lowered toward the substrate MW and the bonding object W by the driving part. When the second electrode 280 formed at the lower peripheral portion of the plasma tip 262 is located at a prescribed distance D1 from the upper surface of the bonding object W by the descent of the plasma device 260, the voltage forming part 282 may form a voltage for anodic bonding heat treatment between the first electrode 270 and the second electrode 280.
The separation distance D1 between the plasma tip 262 and the bonding object W is preferably less than 1cm (several mm) so that an anodic bonding voltage is formed between the substrate MW and the bonding object W. Accordingly, the bonding object W can be primarily bonded to the substrate MW by performing the anodic bonding heat treatment in a state where the plasma tip 262 is released from the bonding object W. In order to perform the anodic bonding heat treatment on the entire area of the substrate and the bonding object during the main bonding process, the anodic bonding heat treatment may be performed in a case where the position of the bonding object W of the apparatus 260 is changed by moving the plasma in the horizontal direction.
According to the embodiment of the present invention, RF power supplied as the plasma device 260, the type of process gas, etc. are sequentially controlled, and RIE plasma processing, surface activation plasma processing, etc. can be sequentially performed by one plasma device 260. In addition, by using the second electrode 280 provided to the plasma device 260 as a negative electrode for anodic bonding heat treatment in the main bonding process, the plasma device 260 may also be used in the main bonding process to reduce the bonding process cost.
Fig. 20 is a conceptual diagram for describing a bonding method according to another embodiment of the present invention. Fig. 21 is a schematic view of a second plasma apparatus constituting the plasma processing section shown in fig. 20. Referring to fig. 20 and 21, the plasma processing section is configured to sequentially perform plasma processing by two or more plasma devices 260, 290.
The first plasma device 260 may be of a structure as shown in fig. 19. The second plasma device 290 may include: a body 291; a plasma tip 292 for locally applying plasma and gas supplies 293, 294 formed in the body 291 to a bonding region of the substrate and/or a bonding surface of a bonding object for introducing a process gas (e.g., oxygen/argon) into the body 291. Undescribed reference numeral 297 designates an ion trap plate.
The first and second plasma devices 260, 290 may be used in a primary bonding process. In the plasma device 290, a second electrode (negative electrode) 300 for anodic bonding heat treatment is formed at a lower edge portion of the plasma tip 292. The voltage forming section 302 applies a voltage for the anodic bonding heat treatment to the second electrode 300.
Similar to the first plasma device 260, the second plasma device 290 may be moved in up-down, front-back, left-right directions (horizontal directions) by a driving part (not shown). In the main bonding process, the second plasma device 290 is lowered toward the substrate MW and the bonding object W by the driving part, similarly to the first plasma device 260. When the second electrode 300 formed at the lower peripheral portion of the plasma tip 292 is located at a prescribed distance D1 from the upper face of the bonding object W by the descent of the second plasma device 290, the voltage forming part 302 may form a voltage for anodic bonding heat treatment between the first electrode 270 and the second electrode 300.
According to an embodiment of the present invention, the second electrode (negative electrode) 280 for anodic bonding heat treatment is formed at the plasma tip 262, 292 portion of the first and second plasma devices 260, 290 for sequential plasma treatment, and the plasma tip 262, 292 portion of the first and second plasma devices 260, 290 is used as the negative electrode for anodic bonding heat treatment in the main bonding process, so that it is possible to secure strong bonding force in response to various material types, interface characteristics, and bonding interface size variations of the substrate and the bonding object, and to reduce the bonding process cost by using the plasma devices 260, 290 in the main bonding process.
Fig. 22 to 26 are conceptual diagrams for describing a die bonding method according to an embodiment of the present invention. Referring first to fig. 22, a plasma region P is formed on an upper surface of a substrate MW to form the upper surface of the substrate MW as a hydrophilic surface PS1. By the plasma treatment, the substrate MW having the hydrophilic surface PS is transferred to the bonding stage 120 by a substrate carrying unit (not shown). In the embodiment, the through electrode 16 is formed on the silicon base 14 for the substrate MW, and the substrate MW may be a TSV substrate having insulating films 12 and 18 on the upper surface and the lower surface except for the through electrode 16.
Referring to fig. 23, a wetting process of supplying a liquid such as deionized water is performed on an upper portion of a bonding region of a substrate MW subjected to a hydrophilization process by plasma to form a liquid film DL. Referring to fig. 24, a die D having a lower surface formed as a hydrophilic surface PS2 is stacked on a bonding region of a substrate MW by a plasma device. The die D may be a TSV die having a through electrode 26 formed on a silicon substrate 24 and insulating films 22 and 28 on the upper and lower surfaces except for the through electrode 26.
Referring to fig. 22 to 25, when the anodic bonding heat treatment is performed after the die D is pre-bonded on the upper portion of the substrate MW, the hydrophilic surface PS1, the liquid film DL, and the hydrophilic surface PS2 formed at the interface of the substrate MW and the die D are heated and cured, and the die D is completely bonded on the substrate MW through the bonding interface BL.
Fig. 26 is a diagram illustrating pre-bonding multiple dies to a substrate, according to an embodiment of the invention. Referring to fig. 26, after a plurality of dies D are sequentially stacked and pre-bonded on a substrate MW, a bonding interface between the substrate MW and the dies D or between the dies D is effectively cured by an anodic bonding heat treatment to primarily bond the substrate MW and the plurality of dies D at one time, thereby manufacturing a 3D semiconductor.
According to embodiments of the present invention, TSV die may be bonded without using a separate bonding medium like adhesive film live solder bumps by a pre-bonding process by plasma treatment and a main bonding process by anodic bonding heat treatment. As a result, since the problems such as short circuit and poor power supply due to the sweep of the solder bump and the connection with the surrounding solder bump do not occur, the quality of the semiconductor can be improved, and the TSV die can be bonded regardless of the miniaturization of the I/O pitch. In addition, while hydrophilization can be performed by performing plasma treatment on the bonding surface of the die without interrupting the transfer of the die, a wetting treatment that drops deionized water into the bonding region on the substrate can be performed during the transfer of the die, so that the pre-bonding process can be rapidly handled.
Fig. 27 is a schematic side view of a die bonding apparatus according to another embodiment of the present invention. Fig. 28 is a diagram for describing the operation of the die bonding apparatus according to the embodiment of fig. 27. Referring to fig. 27 and 28, the die bonding apparatus 100 may further include a transfer device 210 that moves the plasma device 170 along a rail 200 arranged in a transfer direction (first direction, X) of the die D.
The transfer device 210 may move the plasma device 170 at the same transfer speed (or the moving speed of the bonding head) as the die D or at a lower transfer speed V1 than the die D when the die D moves between the plasma processing sections. When the moving speed V1 of the bonding head 140 is equal to the moving speed V2 of the plasma device 170, the relative speed of the die D and the plasma device 170 becomes 0, and when the die D moves toward the bonding stage 120, the same high hydrophilic effect as when the die D is stationary for treating the plasma can be obtained.
In the case of moving the plasma device 170 at a lower speed than the transfer speed V1 of the die D, a hydrophilic effect can be obtained in which the die D passes through the plasma region P of the plasma device 170 at a speed (V1-V2) slower than the actual transfer speed V1 while rapidly moving the die D. Therefore, according to the embodiments of fig. 27 and 28, an effect can be obtained in which the bonding surface of the die D is sufficiently hydrophilized by the plasma device 170 while the die D is being transferred at a high speed.
Various driving tools such as a driving motor, a hydraulic cylinder, a pneumatic cylinder, and the like can be used as driving sources of the bonding stage 120, the bonding head 140, the wetting device 180, the alignment inspection section 190, the transfer device 210, and the like. In addition, the driving method is not limited to the illustrated one, and various driving mechanisms such as a transfer belt, a rack and pinion, and a screw lamp may be used.
Fig. 29 is a schematic side view of a die bonding apparatus according to yet another embodiment of the present invention. Referring to fig. 29, the plasma processing part may be a plurality of plasma devices 170 including a first plasma device 170a and a second plasma device 170b. The first plasma device 170a may be a reactive ion etching (RIE; reactiveIon Etching) plasma-treated RIE plasma device for the bonding surface of the die D. The second plasma device 170b may be a hydrophilization plasma device that performs surface activation (Surface Activation) plasma treatment on the bonding surface of the die D.
In order to sequentially perform the reactive ion etching plasma process and the surface activation plasma process on the bonding surface of the die D during the transfer of the die D, the first plasma device 170a and the second plasma device 170b may be sequentially arranged along a transfer path on a straight line of the die D between the support unit 110 and the bonding stage 120.
The die D is hydrophilized by the surface-activated plasma treatment while passing through the upper portion of the second plasma device 170b after performing the reactive ion etching treatment while passing through the upper portion of the first plasma device 170a by the bonding head 140. The first plasma device 170a etches the bonding surface of the smooth die D by high frequency (RF) RIE plasma treatment and removes contaminants and oxidizes the surface. The second plasma device 170b may attach hydrophilic radicals to the bonding surface of the die D, so that chemical reactivity and pre-bonding force may be improved.
In an embodiment, the first plasma device 170a may be an oxygen RIE plasma device operated at low temperature, low pressure (e.g., normal temperature, 60 to 100 Pa) at 50 to 300W power. The second plasma device 170b may be a nitrogen radical plasma device operated at 2000 to 300W power at low temperature and low pressure (e.g., normal temperature, 60 to 100 Pa).
According to the embodiment of the invention, through the sequential plasma treatment, the bonding surface of the die D is hydrophilized, so that the cavity (cavity) is prevented from being formed at the interface between the substrate MW and the die D when the substrate MW and the die D are pre-bonded, and the bonding force, semiconductor characteristic change, structural deformation and the like caused by the gas formed in the cavity can be prevented from being reduced. In addition, after the die and the substrate are sequentially plasma-treated, an anodic bonding heat treatment is performed in a main bonding process, so that a high bonding force can be obtained regardless of the type of the die and the substrate (semiconductor, glass, non-conductor, etc.) or the type of bonding interface substance (Si, ge, C, glass, polymer material, etc.).
Fig. 30 is a side view of a plasma processing portion constituting a die bonding apparatus according to still another embodiment of the present invention. Fig. 31 and 32 are diagrams showing an operation of the plasma processing section according to the embodiment of fig. 30. Referring to fig. 30 and 32, the plasma processing unit 240 includes a plasma device 241, a main body 242, a lift driving unit 243, a moving body 244, and a transfer rail 245. The plasma device 241 generates plasma through the plasma tip 241a to hydrophilize the substrate MW.
The plasma device 241 is coupled to the body 242 driven by the elevation driving unit 243 of the moving body 244, and can be moved in the third direction Z by the elevation driving unit 243 and can be moved in the first direction X by the moving body 244. The plasma device 241 may be moved in the second direction Y. According to the embodiment of fig. 30 and 32, substrate MW is sequentially plasma treated on die D for hydrophilization by using one plasma device 241.
First, as shown in fig. 30, the plasma device 241 generates a plasma bonding region at a bonding region on the substrate MW to perform hydrophilization. The plasma can be concentrated on the bonding surface of the die D by the plasma tip 241a, so that the plasma treatment can be effectively performed and the plasma treatment cost can be reduced. As die D moves toward bonding stage 120, a plasma process may be performed on substrate MW.
When the plasma processing on the substrate MW is completed, the plasma device 241 is moved upward, and then, as shown in fig. 31, the plasma device 241 is moved toward the bonding head 140. Meanwhile, when the bonding head 140 rotates 180 ° about the carriage 142, the bonding surface of the die D may be located under the plasma tip 241a of the plasma device 241.
The plasma device 241 generates plasma on the bonding surface of the die D through the plasma tip 241a to hydrophilize the bonding surface of the die D. At this time, plasma can be concentrated on the bonding surface of the die D by the plasma tip 241a, so that plasma treatment can be effectively performed and plasma treatment cost can be reduced. The plasma treatment to the plasma device 241 may be performed in the movement of the bonding head 140. At this time, in order to increase the contact time of the plasma generated at the plasma tip 241a, the bonding surface of the die D may be plasma-treated while the plasma device 241 is moved in the moving direction of the bonding head 140.
When the bonding surface of the die D is subjected to plasma treatment by the plasma device 241, if the bonding region on the substrate MW is subjected to a rinse treatment (water film formation) by the wetting device 180, the pre-bonding process time is further reduced. Upon completion of the plasma treatment of the bonding surface of the die D, as shown in fig. 32, the wetting device 180 is retracted, the bonding head 140 is rotated downward again by 180 ° and then the bonding head 140 is lowered to pre-bond the die D on the upper portion of the substrate MW.
An atmospheric pressure (normal pressure) plasma device may be provided, or a sequential plasma device may be provided as the plasma device 241. According to the present embodiment, the plasma processing of the substrate MW and the die D is performed at one time using the plasma device 241, so that the process cost for the plasma processing can be reduced and the pre-bonding process time can also be reduced.
Fig. 33 is a side view of a plasma processing portion constituting a die bonding apparatus according to still another embodiment of the present invention. Fig. 34 is a diagram showing an operation of the plasma processing section according to the embodiment of fig. 33. Referring to fig. 33 and 34, the plasma processing section 250 includes a plasma device 251, a main body 252, a lift driving section 253, a moving body 254, and a transfer rail 255.
The plasma device 251 generates plasma through the plasma tip 251a to hydrophilize the substrate MW. The plasma device 251 is coupled to the main body 252 driven by the elevation driving unit 253 of the moving body 254, and can be moved in the third direction Z by the elevation driving unit 253 and can be moved in the first direction X by the moving body 254. The plasma device 251 may be moved in the second direction Y.
The plasma device 251 may be rotated in the up-down direction by a rotating part (not shown) provided at the main body 252. According to the embodiment of fig. 33 and 34, the substrate MW is sequentially plasma treated on the die D for hydrophilization by using one plasma device 251.
First, as shown in fig. 33, the plasma device 251 generates a plasma bonding region at the bonding region on the substrate MW to perform hydrophilization. The plasma device 251 may concentrate plasma at a bonding region on the substrate MW through the plasma tip 251 a. Therefore, plasma treatment can be efficiently performed, and plasma treatment cost can be reduced. As die D moves toward bonding stage 120, a plasma process may be performed on substrate MW.
When the plasma processing of the substrate MW is completed, as shown in fig. 34, the plasma device 251 is moved toward the bonding head 140, and the main body 252 is moved downward, and then the plasma device 251 is rotated upward by 180 ° about the main body 252, so that the plasma tip 251a of the plasma device 251 is positioned below the bonding surface of the die D. The plasma device 251 generates plasma on the bonding surface of the die D through the plasma tip 251a to hydrophilize the bonding surface of the die D.
The plasma treatment to the plasma device 251 may be performed in the movement of the bond head 140. At this time, in order to increase the contact time of the plasma generated at the plasma tip 251a, the bonding surface of the die D may be plasma-treated while the plasma device 251 is moved in the moving direction of the bonding head 140. If the plasma treatment of the bonding face of die D is completed, then it is arranged on substrate MW by bonding heads 140, jiang Guanxin D to pre-bond. An atmospheric pressure (normal pressure) plasma device may be provided, or a sequential plasma device may be provided as the plasma device 251. According to the present embodiment, plasma processing of the substrate MW and the die D is sequentially performed using the plasma device 251, so that the process cost for the plasma processing can be reduced and the pre-bonding process time can also be reduced.
The foregoing detailed description illustrates the invention. The foregoing description of the preferred embodiments of the present invention has been presented for purposes of illustration, but the present invention is applicable to various other combinations, modifications, and environments. That is, variations or modifications may be made within the scope of the inventive concepts disclosed in the present specification, within the scope equivalent to the disclosure and/or within the skill or indication of the field of technology. The embodiments described are for describing the best mode for carrying out the technical idea of the present invention, and various modifications required in the detailed application fields and uses of the present invention are possible. Therefore, the detailed description of the invention is not intended to limit the invention to the embodiments disclosed. Moreover, the scope of the appended claims should also be construed to include other embodiments.

Claims (15)

1. A bonding method of bonding a bonding object including a die or a second substrate on a first substrate, comprising:
disposing the bonding object on the first substrate; and
bonding the bonding object on the first substrate by anodic bonding forming a voltage between the first substrate and the bonding object,
wherein bonding the bonding object includes:
Placing a plasma tip of a plasma device capable of performing plasma discharge on an upper portion of the bonding object; and
forming a potential at the plasma tip in a state where the plasma tip is spaced apart from an upper surface of the bonding object by a predetermined distance, applying a voltage for anodic bonding between the bonding object and the first substrate in a non-bonding manner to anodically bond the bonding object to the first substrate; and is also provided with
Wherein bonding the bonding object further comprises:
the anodic bonding is performed while moving the plasma tip along an X-axis parallel to a bonding surface of the bonding object and a Y-axis perpendicular to the X-axis, and one or more of the bonding objects are bonded on the first substrate provided as a large-area substrate or on the first substrate provided as a large-area substrate.
2. The bonding method according to claim 1, further comprising:
hydrophilizing at least one of a bonding region on the first substrate and a bonding surface of the bonding object by plasma treatment before the bonding object is arranged on the first substrate; and
Before the bonding object is arranged on the first substrate, a water film is formed by spraying liquid on at least one of a bonding region on the first substrate and a bonding surface of the bonding object.
3. The bonding method according to claim 2, wherein,
disposing the bonding object on the first substrate includes:
the bonding object is pre-bonded on the first substrate by a bonding force of a water film formed between the first substrate and the bonding object.
4. The bonding method according to claim 2, wherein,
the hydrophilizing comprises:
and generating plasma through the plasma tip, and hydrophilizing at least one of a bonding area on the first substrate and a bonding surface of the bonding object.
5. The bonding method according to claim 1, wherein,
the prescribed distance is greater than 0mm and less than 1cm.
6. The bonding method according to claim 1, wherein,
applying a voltage for the anodic bonding, comprising:
a potential difference for the anodic bonding is formed between a first electrode in contact with a lower surface of the first substrate and a second electrode provided at the plasma tip.
7. The bonding method according to claim 6, wherein,
the anodic bonding is performed at normal temperature and normal pressure, and the potential difference is 100V or more.
8. The bonding method according to claim 2, further comprising:
picking up the bonding object supported on the supporting unit with a bonding head, transferring to an upper region of the first substrate supported on the bonding stage,
the hydrophilization is performed by performing plasma treatment on the bonding surface of the bonding object through the plasma tip during transfer of the bonding object.
9. A bonding apparatus for bonding a bonding object including a die or a second substrate on a first substrate, comprising:
a plasma device provided with a plasma tip capable of performing plasma discharge;
a voltage forming portion configured to apply a potential for anodic bonding to the plasma tip located at an upper portion of the bonding object, the voltage forming portion forming a voltage for anodic bonding between the first substrate and the bonding object disposed on the first substrate; and
and a driving unit configured to move the plasma device in a horizontal direction and a vertical direction, wherein the anode bonding is performed while the plasma device is moved in the horizontal direction and the vertical direction by the driving unit, and the bonding target provided for a large-area substrate is bonded to the first substrate or the bonding target is bonded to the first substrate provided for a large-area substrate.
10. The bonding apparatus according to claim 9, wherein the bonding apparatus comprises a plurality of bonding pads,
the voltage forming portion forms a potential difference for anodic bonding between a first electrode in contact with a lower surface of the first substrate and a second electrode provided at the plasma tip.
11. The bonding apparatus of claim 9, further comprising:
a plasma processing unit configured to hydrophilize at least one of a bonding region on the first substrate and a bonding surface of the bonding target by plasma processing; and
and a wetting device configured to spray a liquid onto at least one of a bonding region on the first substrate and a bonding surface of the bonding target to form a water film.
12. The bonding apparatus according to claim 11, wherein the bonding apparatus comprises a plurality of bonding pads,
the plasma processing unit generates plasma by the plasma tip, and hydrophilizes at least one of a bonding region on the first substrate and a bonding surface of the bonding target.
13. The bonding apparatus according to claim 9, wherein the bonding apparatus comprises a plurality of bonding pads,
the plasma device is configured to apply a voltage for anodic bonding between the bonding object and the first substrate in a non-bonding manner by forming the potential at the plasma tip in a state in which the plasma tip is spaced apart from an upper face of the bonding object by a prescribed distance.
14. The bonding apparatus of claim 9, further comprising:
a bonding stage supporting the first substrate; and
a bonding head picking up the bonding object supported on the supporting unit, transferring the bonding object to an upper region of the first substrate supported on the bonding stage,
the plasma device is configured to perform plasma treatment on a bonding surface of the bonding object through the plasma tip to perform hydrophilization during transfer of the bonding object.
15. A bonding apparatus for bonding a bonding object including a die or a second substrate on a first substrate, comprising:
a plasma device provided with a plasma tip capable of performing plasma discharge,
the plasma tip is provided with an electrode for forming a voltage for anodic bonding between the first substrate and the bonding object,
is configured to bond the bonding object on the first substrate by forming a voltage for anodic bonding between the first substrate and the bonding object by a potential applied to the electrode; and
and a driving unit configured to move the plasma device in a horizontal direction and a vertical direction, wherein the anode bonding is performed while the plasma device is moved in the horizontal direction and the vertical direction by the driving unit, and the bonding target provided for a large-area substrate is bonded to the first substrate or the bonding target is bonded to the first substrate provided for a large-area substrate.
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