CN108807550A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
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- CN108807550A CN108807550A CN201810601974.3A CN201810601974A CN108807550A CN 108807550 A CN108807550 A CN 108807550A CN 201810601974 A CN201810601974 A CN 201810601974A CN 108807550 A CN108807550 A CN 108807550A
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- pattern layer
- copper
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- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 93
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 title description 3
- 239000010949 copper Substances 0.000 claims abstract description 269
- 229910052802 copper Inorganic materials 0.000 claims abstract description 227
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 200
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000010409 thin film Substances 0.000 claims abstract description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 181
- 239000000463 material Substances 0.000 claims description 159
- 229910052757 nitrogen Inorganic materials 0.000 claims description 90
- 230000003647 oxidation Effects 0.000 claims description 87
- 238000007254 oxidation reaction Methods 0.000 claims description 87
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 43
- 229910052750 molybdenum Inorganic materials 0.000 claims description 43
- 239000011733 molybdenum Substances 0.000 claims description 43
- -1 copper nitride Chemical class 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- 238000005240 physical vapour deposition Methods 0.000 claims description 12
- 239000001272 nitrous oxide Substances 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 22
- 230000000052 comparative effect Effects 0.000 description 8
- 101000606064 Cupiennius salei Cupiennin-1a Proteins 0.000 description 7
- 101000761027 Cupiennius salei Cupiennin-1c Proteins 0.000 description 7
- 101000760666 Cupiennius salei Cupiennin-2a Proteins 0.000 description 7
- 101000760654 Cupiennius salei Cupiennin-2c Proteins 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 101000760656 Cupiennius salei Cupiennin-2b Proteins 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 description 4
- 229910000906 Bronze Inorganic materials 0.000 description 3
- 101000606068 Cupiennius salei Cupiennin-1b Proteins 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000010974 bronze Substances 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000009545 invasion Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- YSRUGFMGLKANGO-UHFFFAOYSA-N zinc hafnium(4+) indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[In+3].[Hf+4] YSRUGFMGLKANGO-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910016547 CuNx Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XYQGTTDSDCKKFV-UHFFFAOYSA-N [O].[N].[Cu] Chemical compound [O].[N].[Cu] XYQGTTDSDCKKFV-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
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- H01L23/53204—Conductive materials
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- H01L23/53204—Conductive materials
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- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
一种半导体装置及其制造方法,该半导体装置包括第一基板以设置于第一基板上的薄膜晶体管。薄膜晶体包括栅极、半导体图案、第一绝缘层、源极以及漏极。第一绝缘层设置于栅极与半导体图案之间。源极与漏极彼此分离且各自与半导体图案对应设置。源极与漏极的至少一者具有第一铜图案层与第一氮氧化铜图案层。第一氮氧化铜图案层覆盖第一铜图案层。第一铜图案层设置于第一氮氧化铜图案层与第一基板之间。本发明的半导体装置中,外界水气不易入侵源极与漏极的至少一者的铜图案层,因此本发明的半导体装置的信赖性佳。
Description
技术领域
本发明是有关于一种电子装置及其制造方法,且特别是有关于一种半导体装置及其制造方法。
背景技术
铜(copper;Cu)具有高导电率、低电阻及低成本的优势,因此,铜常作为薄膜晶体管的源极与漏极的材料之一。然而,铜与其上的膜层的附着(adhesion)不佳时,铜易受外界水气的影响而劣化,进而影响薄膜晶体管的电性。举例而言,源极与漏极的铜层劣化时,薄膜晶体管的漏极电流(ID)与栅极电压(VGS)的关系曲线(I-V curve)会偏移,而造成漏电流。此时,若显示面板采用上述薄膜晶体管作为像素开关,薄膜晶体管无法正常地关闭像素,而会出现显示异常的问题(例如:黑白棋盘格画面的黑格泛白)。
发明内容
本发明提供一种半导体装置,不易产生漏电流的问题,信赖性佳。
本发明提供一种半导体装置的制作方法,能实现不易产生漏电流问题且信赖性佳的半导体装置。
本发明的一实施例的半导体装置包括第一基板以及薄膜晶体管。薄膜晶体管设置于第一基板上。薄膜晶体包括栅极、半导体图案、第一绝缘层、源极以及漏极。第一绝缘层设置于栅极与半导体图案之间。源极与漏极彼此分离且各自与半导体图案对应设置。源极与漏极的至少一者具有第一铜图案层与第一氮氧化铜图案层。第一氮氧化铜图案层覆盖第一铜图案层。第一铜图案层设置于第一氮氧化铜图案层与第一基板之间。在本发明的一实施例中,上述的第一铜图案层具有第一顶面、第一底面以及连接于第一底面与第一顶面之间的第一侧壁,而第一氮氧化铜图案层覆盖第一顶面及第一侧壁。
在本发明的一实施例中,上述的源极与漏极的至少一者更具有第一钼图案层,第一铜图案层设置于第一氮氧化铜图案层与第一钼图案层之间。
在本发明的一实施例中,上述的半导体装置更包括数据线,与薄膜晶体管的源极电性连接。数据线具有第二铜图案层与第二氮氧化铜图案层。第二氮氧化铜图案层覆盖第二铜图案层。第二铜图案层设置于第二氮氧化铜图案层与第一基板之间。
在本发明的一实施例中,上述的第二铜图案层具有第二顶面、第二底面以及连接于第二底面与第二顶面之间的第二侧壁,而第二氮氧化铜图案层覆盖第二顶面及第二侧壁。
在本发明的一实施例中,上述的数据线更具有第二钼图案层。第二铜图案层设置于第二氮氧化铜图案层与第二钼图案层之间。
在本发明的一实施例中,上述的第一氮氧化铜图案层直接与第一铜图案层接触。
在本发明的一实施例中,上述的半导体装置更包括氧化硅层,覆盖第一氮氧化铜图案层且与第一氮氧化铜图案层接触。
在本发明的一实施例中,上述的半导体装置更包括像素电极,与漏极电性连接。
本发明的一实施例提供一种半导体装置的制造方法包括下列步骤:提供第一基板;于第一基板上形成栅极、第一绝缘层以及半导体图案,其中第一绝缘层设置于栅极与半导体图案之间;利用物理气相沉积在第一基板上形成铜材料层;通入氮气,以在铜材料层上形成氮化铜材料层;图案化铜材料层与氮化铜材料层,以形成第一铜材料层与一第一氮化铜材料层;以及通入一氧化二氮,以形成第一氮氧化铜图案层与第一铜图案层,该第一氮氧化铜图案层覆盖该第一铜图案,其中第一铜图案层以及第一氮氧化铜图案层构成源极与漏极,而源极与漏极彼此分离且各自与半导体图案对应设置。
在本发明的一实施例中,上述的半导体装置的制造方法更包括:在形成第一氮氧化铜图案层之后,通入硅烷,硅烷与一氧化二氮反应,以形成氧化硅层,其中氧化硅层覆盖源极与漏极。
基于上述,在本发明的实施例的半导体装置及其制造方法中,源极与漏极的至少一者的表面分别具有氮氧化铜图案层,以及/或数据线的表面具有氮氧化铜图案层,因氮氧化铜图案层具有致密的材料特性,及/或氮氧化铜图案层与氧化硅层的附着佳。由此,外界水气不易入侵源极与漏极的至少一者的铜图案层,而本发明的实施例的半导体装置的信赖性佳。
附图说明
图1A至图1F是依照本发明的实施例的半导体装置的制造流程剖面示意图。
图2为本发明的实施例的半导体装置的上视示意图。
图3是依照比较例的半导体装置的剖面示意图。
图4是依照比较例的半导体装置于电子显微镜下的局部剖面影像。
图5是依照本发明的实施例的半导体装置于电子显微镜下的局部剖面影像。
其中,附图标记:
100、200:半导体装置
110:第一基板
120:薄膜晶体管
122:栅极
124:第一绝缘层
126:半导体图案
128a、128a’:源极
128b、128b’:漏极
130:氧化硅层
140:像素电极
A-A’:剖线’
Cu:铜材料层
Cu’:铜图案层
Cu-t:顶面区域
Cu-1:第一铜图案层
Cu-1a:第一顶面
Cu-1b:第一底面
Cu-1c:第一侧壁
Cu’-1:第一铜材料层
Cu’-2:第二铜材料层
Cu’-1e、Cu’-2e:侧壁区域
Cu-2:第二铜图案层
Cu-2a:第二顶面
Cu-2b:第二底面
Cu-2c:第二侧壁
CuN:氮化铜材料层
CuN’-1:第一氮化铜材料层
CuN’-2:第二氮化铜材料层
CuN-1:第一氮化铜图案层
CuN-2:第二氮化铜图案层
CuNO’-1:第一氮氧化铜材料层
CuNO’-2:第二氮氧化铜材料层
CuNO-1:第一氮氧化铜图案层
CuNO-2:第二氮氧化铜图案层
DL:数据线
H:接触窗
Mo:钼材料层
Mo’:钼图案层
Mo’-1:第一钼材料层
Mo’-2:第二钼材料层
Mo-1:第一钼图案层
Mo-2:第二钼图案层
SL:扫描线
R1、R2:局部
具体实施方式
在附图中,为了清楚起见,放大了层、膜、面板、区域等的厚度。在整个说明书中,相同的附图标记表示相同的元件。应当理解,当诸如层、膜、区域或基板的元件被称为在另一元件“上”或“连接到”另一元件时,其可以直接在另一元件上或与另一元件连接,或者中间元件可以也存在。相反,当元件被称为“直接在另一元件上”或“直接连接到”另一元件时,不存在中间元件。如本文所使用的,“连接”可以指物理及/或电性连接。再者,“电性连接”或“耦合”可为二元件间存在其它元件。
本文使用的“约”、“近似”、或“实质上”包括所述值和在本领域普通技术人员确定的特定值的可接受的偏差范围内的平均值,考虑到所讨论的测量和与测量相关的误差的特定数量(即,测量***的限制)。例如,“约”可以表示在所述值的一个或多个标准偏差内,或±30%、±20%、±10%、±5%内。再者,本文使用的“约”、“近似”或“实质上”可依光学性质、蚀刻性质或其它性质,来选择较可接受的偏差范围或标准偏差,而可不用一个标准偏差适用全部性质。
除非另有定义,本文使用的所有术语(包括技术和科学术语)具有与本发明所属领域的普通技术人员通常理解的相同的含义。将进一步理解的是,诸如在通常使用的字典中定义的那些术语应当被解释为具有与它们在相关技术和本发明的上下文中的含义一致的含义,并且将不被解释为理想化的或过度正式的意义,除非本文中明确地这样定义。
本文参考作为理想化实施方式的示意图的截面图来描述示例性实施方式。因此,可以预期到作为例如制造技术及/或公差的结果的图示的形状变化。因此,本文所述的实施方式不应被解释为限于如本文所示的区域的特定形状,而是包括例如由制造导致的形状偏差。例如,示出或描述为平坦的区域通常可以具有粗糙及/或非线性特征。此外,所示的锐角可以是圆的。因此,图中所示的区域本质上是示意性的,并且它们的形状不是旨在示出区域的精确形状,并且不是旨在限制权利要求的范围。
现将详细地参考本发明的示范性实施例,示范性实施例的实例说明于所附图式中。只要有可能,相同元件符号在图式和描述中用来表示相同或相似部分。
图1A至图1F是依照本发明的实施例的半导体装置的制造流程剖面示意图。图2为本发明的实施例的半导体装置的上视示意图。具体而言,图1F的剖面是对应于图2的的剖线A-A’。
请参考图1A,本实施例中,首先,提供第一基板110。接着,在第一基板110上依序形成栅极122、第一绝缘层124以及半导体图案126。第一绝缘层124覆盖栅极122。半导体图案126设置于第一绝缘层124上。第一绝缘层124设置于栅极122与半导体图案126之间。在本实施例中,于形成栅极122时,可选择性地一起形成扫描线SL(标示于图2),但本发明不以此为限。
举例而言,在本实施例中,可利用物理气相沉积(Physical Vapor Deposition;PVD)形成栅极122与扫描线SL。栅极122的材料可为铜、铬(chromiun;Cr)、钨(tungsten;W)、钛(titanium;Ti)、钽(tantalum;Ta)、钼(Molybdenum;Mo)、其它适当的导电材料或上述至少两种材料的组合,但本发明不以此为限。
举例而言,在本实施例中,可利用化学气相沉积(Chemical Vapor Deposition;CVD)形成第一绝缘层124,但本发明不以此为限。第一绝缘层124的材料可为二氧化硅(silicon dioxide;SiO2)、氮化硅(silicon nitride;Si3N4)、二氧化铪(hafniumdioxide;HfO2)、或上述至少两种材料的组合。然而,本发明不以此为限,在其他实施例中,第一绝缘层124也可为其他高介电常数(high dielectric constant)材料,以有效地电性隔离栅极122与半导体层126。
举例而言,在本实施例中,可利用物理气相沉积形成半导体材料层(未绘示);然后,再图案化半导体材料层,进而形成半导体图案126。在本实施例中,半导体图案126例如是多个膜层的堆叠结构,所述多个膜层可包括半导体材料(未绘示)及欧姆接触层(Ohmiccontact layer;未绘示)。半导体图案126的半导体材料可选择性地采用氧化铟镓锌(Indium Gallium Zinc Oxide;IGZO)、氧化铪铟锌(Hafnium Indium Zinc Oxide;HIZO)、氧化铟锌(Indium Zinc Oxide;IZO)或其他金属氧化物,以使后续形成的薄膜晶体管120(标示于图1D)在采用小面积的半导体图案126的情况下仍具有高电子迁移率。然而,本发明不限于此,在其它实施例中,半导体图案126的半导体材料也可采用其它适当种类的半导体。此外,本发明也不限制半导体图案126一定要包括欧姆接触层。
请参考图1A,接着,在本实施例中,可选择性地于第一基板110上依序形成钼材料层Mo及铜材料层Cu,其中钼材料层Mo覆盖半导体图案126,铜材料层Cu配置于钼材料层Mo上。举例而言,在本实施例中,可利用物理气相沉积(例如:溅射)形成钼材料层Mo及铜材料层Cu,但本发明不以此为限。
请参考图1B,接着,通入氮气(nitrogen gas;N2),以在铜材料层Cu上形成氮化铜材料层CuN。请参照图1A及图1B,详细而言,在形成具有预定膜厚的铜材料层Cu后(如图1A所示),通入氮气以使氮气与铜材料层Cu的顶面区域Cu-t(标示于图1A)反应,而形成氮化铜材料层CuN(如图1B所示)。氮化铜材料层CuN可以化学式CuNm表示,其中m可为正整数。
请参照图1B及图1C,接着,图案化氮化铜材料层CuN、铜材料层Cu及钼材料层Mo,以使氮化铜材料层CuN形成第一氮化铜材料层CuN’-1及第二氮化铜材料层CuN’-2,使铜材料层Cu形成第一铜材料层Cu’-1及第二铜材料层Cu’-2,且使钼材料层Mo形成第一钼材料层Mo’-1及第二钼材料层Mo’-2。在本实施例中,可使用同一图案化光阻(patternedphotoresist;未绘示)为掩膜,图案化氮化铜材料层CuN、铜材料层Cu及钼材料层Mo,以形成第一氮化铜材料层CuN’-1、第二氮化铜材料层CuN’-2、第一铜材料层Cu’-1、第二铜材料层Cu’-2、第一钼材料层Mo’-1及第二钼材料层Mo’-2,其中第一氮化铜材料层CuN’-1、第一铜材料层Cu’-1及第一钼材料层Mo’-1互相重合,第二氮化铜材料层CuN’-2、第二铜材料层Cu’-2及第二钼材料层Mo’-2互相重合。
举例而言,在本实施例中,可在所述图案化光阻(未绘示)遮蔽氮化铜材料层CuN、铜材料层Cu及钼材料层Mo的情况下,使用在同一种蚀刻液,同时去除氮化铜材料层CuN、铜材料层Cu及钼材料层Mo中未被所述图案化光阻遮蔽的部分,以形成第一氮化铜材料层CuN’-1、第二氮化铜材料层CuN’-2、第一铜材料层Cu’-1、第二铜材料层Cu’-2、第一钼材料层Mo’-1及第二钼材料层Mo’-2。然而,本发明不以此为限,在其他实施例中,也可在图案化光阻(未绘示)遮蔽氮化铜材料层CuN、铜材料层Cu及钼材料层Mo的情况下,使用在多种不同的蚀刻液,分次去除氮化铜材料层CuN、铜材料层Cu及钼材料层Mo中未被图案化光阻遮蔽的部分。
请参照图1C及图1D,接着,通入一氧化二氮(nitrous oxide;N2O),一氧化二氮至少与第一氮化铜材料层CuN’-1及第一铜材料层Cu’-1的侧壁区域Cu’-1e反应,以形成第一氮氧化铜图案层CuNO-1;其中,未暴露于一氧化二氮中的部分的第一铜材料层Cu’-1(亦即,侧壁区域Cu’-1e以外的第一铜材料层Cu’-1的其它区域)则形成第一铜图案层Cu-1。一氧化二氮与第二氮化铜材料层CuN’-2及第二铜材料层Cu’-2的侧壁区域Cu’-1e、Cu’-2e反应,以形成第二氮氧化铜图案层CuNO-2,其中,未暴露于一氧化二氮中的部分的第二铜材料层Cu’-2(亦即,侧壁区域Cu’-1e、Cu’-2e以外的第二铜材料层Cu’-2的其它区域)则形成第二铜图案层Cu-2。第一氮氧化铜图案层CuNO-1与第二氮氧化铜图案层CuNO-2可以化学式CuNxOy表示,其中x与y为正整数。
请参照图1D,在本实施例中,第一氮氧化铜图案层CuNO-1覆盖第一铜图案层Cu-1。详言之,第一铜图案层Cu-1具有第一顶面Cu-1a、第一底面Cu-1b以及连接于第一底面Cu-1b与第一顶面Cu-1a之间的第一侧壁Cu-1c,而第一氮氧化铜图案层CuNO-1覆盖第一顶面Cu-1a及第一侧壁Cu-1c。第一铜图案层Cu-1设置于第一氮氧化铜图案层CuNO-1与第一钼图案层Mo-1之间。第一氮氧化铜图案层CuNO-1与第一铜图案层Cu-1可直接接触。第一铜图案层Cu-1与第一钼图案层Mo-1可直接接触。类似地,第二铜图案层Cu-2具有第二顶面Cu-2a、第二底面Cu-2b以及连接于第二底面Cu-2b与第二顶面Cu-2a之间的第二侧壁Cu-2c,而第二氮氧化铜图案层CuNO-2覆盖第二顶面Cu-2a与第二侧壁Cu-2c。第二铜图案层Cu-2设置于第二氮氧化铜图案层CuNO-2与第二钼图案层Mo-2之间。第二氮氧化铜图案层CuNO-2与第二铜图案层Cu-2可直接接触。第二铜图案层Cu-2与第二钼图案层Mo-2可直接接触。
在本实施例中,部分的第一钼图案层Mo-1、部分的第一铜图案层Cu-1以及部分的第一氮氧化铜图案层CuNO-1可构成源极128a。另一部分的第一钼图案层Mo-1、另一部分的第一铜图案层Cu-1以及另一部分的第一氮氧化铜图案层CuNO-1可构成漏极128b。源极128a与漏极128b结构上彼此分离且各自与半导体图案126对应设置。在本实施例中,第二钼图案层Mo-2、第二铜图案层Cu-2以及第二氮氧化铜图案层CuNO-2可构成数据线DL,其中数据线DL与源极128a电性连接。栅极122、第一绝缘层124、半导体图案126、源极128a以及漏极128b可构成薄膜晶体管120。在本实施例中,薄膜晶体管120是以底部栅极型薄膜晶体管(bottomgate TFT)为示例。然而,本发明不限于此,在其它实施例中,薄膜晶体管120也可为顶部栅极型薄膜晶体管(top gate TFT)或其它适当型式的薄膜晶体管。
在本实施例中,由于在第一顶面Cu-1a上的部分第一氮氧化铜图案层CuNO-1与在第一侧面Cu-1c上的部分第一氮氧化铜图案层CuNO-1的形成过程不同,在第二顶面Cu-2b上的部分第二氮氧化铜图案层CuNO-2与在第二侧面Cu-2c上的部分第二氮氧化铜图案层CuNO-2的形成过程不同,因此在第一顶面Cu-1a上的部分第一氮氧化铜图案层CuNO-1的膜厚T1与在第一侧面Cu-1c上的部分第一氮氧化铜图案层CuNO-1的膜厚t1可能略有不同,在第二顶面Cu-2a上的部分第二氮氧化铜图案层CuNO-2的膜厚T2与在第二侧面Cu-2c上的部分第二氮氧化铜图案层CuNO-2的膜厚t2可能略有不同。举例而言,在本实施例中,在第一顶面Cu-1a上的部分第一氮氧化铜图案层CuNO-1的膜厚T1可略微大于在第一侧面Cu-1c上的部分第一氮氧化铜图案层CuNO-1的膜厚t1,在第二顶面Cu-2a上的部分第二氮氧化铜图案层CuNO-2的膜厚T2可略微大于在第二侧面Cu-2c上的部分第二氮氧化铜图案层CuNO-2的膜厚t2。举例而言, 而然而,本发明不限于此,在其它实施例中,在第一顶面Cu-1a上的部分第一氮氧化铜图案层CuNO-1的膜厚T1也可能实质上等于在第一侧面Cu-1c上的部分第一氮氧化铜图案层CuNO-1的膜厚t1,在第二顶面Cu-2a上的部分第二氮氧化铜图案层CuNO-2的膜厚T2也可能实质上等于在第二侧面Cu-2c上的部分第二氮氧化铜图案层CuNO-2的膜厚t2。
请参考图1E,在本实施例中,接着,通入硅烷(silane;SiH4),硅烷与上述的一氧化二氮反应,以形成氧化硅层130。氧化硅层130覆盖源极128a与漏极128b。氧化硅层130覆盖第一氮氧化铜图案层CuNO-1及第二氮氧化铜图案层CuNO-2,且与第一氮氧化铜图案层CuNO-1及第二氮氧化铜图案层CuNO-2接触。氧化硅层130=更覆盖源极128a与漏极128b未覆盖的部分的半导体图案126。
请参考图1F,接着,可在氧化硅层130中形成接触窗H,以暴露出部分的漏极128b。然后,在氧化硅层130上形成像素电极140,像素电极140透过接触窗H与漏极128b电性连接。于此,便完成了本实施例的半导体装置100。
请参考图1F及图2,在本实施例中,扫描线SL与数据线DL交叉设置。由图2可知,扫描线SL与栅极122属同一第一导电层,源极128、漏极128b以及数据线DL属同一第二导电层。数据线DL的表面具有第二氮氧化铜图案层CuNO-2。源极128的表面与漏极128b的表面具有第一氮氧化铜图案层CuNO-1。值得一提的是,在本实施例中,由于源极128a与漏极128b的第一氮氧化铜图案层CuNO-1及数据线DL的第二氮氧化铜图案层CuNO-2具有致密的材料结构,源极128a与漏极128b的第一氮氧化铜图案层CuNO-1覆盖源极128a与漏极128b的第一铜图案层Cu-1,数据线DL的第二氮氧化铜图案层CuNO-2覆盖数据线DL的第二铜图案层Cu-2。由此,源极128a与漏极128b的第一铜图案层Cu-1及数据线DL的第二铜图案层Cu-2不易受到外界水气入侵而降低产生劣化的情形。以下通过图3、图4及图5举例说明。
图3是依照比较例的半导体装置的剖面示意图。请参照图1F及图3,比较例的半导体装置200与图1F的本发明的实施例的半导体装置100类似,两者的差异在于:比较例的半导体装置200的源极128a’与漏极128b’由钼图案层Mo’与铜图案层Cu’堆叠成,比较例的铜图案层Cu’上未覆盖有氮氧化铜图案层。图4是依照比较例的半导体装置的局部于电子显微镜下的剖面影像。图4的半导体装置的局部剖面影像对应图3的半导体装置200的局部R2的剖面。
请参见图4,其示出比较例的半导体装置200尚未进行高温高湿测试前半导体装置200的局部R2的剖面影像(如图4的0小时的字段)及已进行高温高湿测试1000小时后半导体装置200的局部R2的剖面影像(如图4的1000小时的字段)。如图4所示,由于铜图案层Cu’与氧化硅层130的附着(adhesion)差,因此半导体装置200经过1000小时的高温高湿测试后,铜图案层Cu’受到水气入侵而向四周膨胀,进而造成薄膜晶体管120产生漏电流的问题。
图5是依照本发明的实施例的半导体装置于电子显微镜下的局部剖面影像。图5的半导体装置的局部剖面影像对应图1F的半导体装置100的局部R1的剖面。请参见图5,其示出尚未进行高温高湿测试前本发明的实施例的半导体装置100的局部R1的剖面影像(如图5的0小时的字段)及已进行高温高湿测试1000小时后半导体装置100的局部R1的剖面影像(如图5的1000小时的字段)。如图5所示,由于氮氧化铜图案层(包括第一氮氧化铜图案层CuNO-1与第二氮氧化铜图案层CuNO-2)与氧化硅层130的附着(adhesion)佳,因此半导体装置100经过1000小时的高温高湿测试后,铜图案层(包括第一铜图案层Cu-1及第二铜图案层Cu-2)不易受到水气入侵,而薄膜晶体管120不易产生漏电流的问题,本实施例的半导体装置100的信赖性佳。
综上所述,在本发明的实施例的半导体装置及其制造方法中,源极与漏极的至少一者的表面分别具有氮氧化铜图案层,以及/或数据线的表面具有氮氧化铜图案层,因氮氧化铜图案层具有致密的材料特性,及/或氮氧化铜图案层与氧化硅层的附着佳。由此,外界水气不易入侵源极与漏极的至少一者的铜图案层,而本发明的实施例的半导体装置的信赖性佳。
当然,本发明还可有其它多种实施例,在不背离本发明精神及其实质的情况下,熟悉本领域的技术人员可根据本发明作出各种相应的改变和变形,但这些相应的改变和变形都应属于本发明权利要求的保护范围。
Claims (11)
1.一种半导体装置,其特征在于,该半导体装置包括:
一第一基板;以及
一薄膜晶体管,设置于该第一基板上,其中该薄膜晶体管包括:
一栅极;
一半导体图案;
一第一绝缘层,设置于该栅极与该半导体图案之间;
一源极以及一漏极,彼此分离且各自与该半导体图案对应设置;
其中,该源极与该漏极的至少一者具有一第一铜图案层与一第一氮氧化铜图案层,该第一氮氧化铜图案层覆盖该第一铜图案层,且该第一铜图案层设置于该第一氮氧化铜图案层与该第一基板之间。
2.如权利要求1所述的半导体装置,其特征在于,该第一铜图案层具有一第一顶面、一第一底面以及连接于该第一底面与该第一顶面之间的一第一侧壁,而该第一氮氧化铜图案层覆盖该第一顶面及该第一侧壁。
3.如权利要求1所述的半导体装置,其特征在于,该源极与该漏极的该至少一者更具有一第一钼图案层,该第一铜图案层设置于该第一氮氧化铜图案层与该第一钼图案层之间。
4.如权利要求1所述的半导体装置,其特征在于,该半导体装置更包括:
一数据线,与该薄膜晶体管的该源极电性连接,其中该数据线具有一第二铜图案层与一第二氮氧化铜图案层,该第二氮氧化铜图案层覆盖该第二铜图案层,且该第二铜图案层设置于该第二氮氧化铜图案层与该第一基板之间。
5.如权利要求4所述的半导体装置,其特征在于,该第二铜图案层具有一第二顶面、一第二底面以及连接于该第二底面与该第二顶面之间的一第二侧壁,而该第二氮氧化铜图案层覆盖该第二顶面及该第二侧壁。
6.如权利要求4所述的半导体装置,其特征在于,该数据线更具有一第二钼图案层,该第二铜图案层设置于该第二氮氧化铜图案层与该第二钼图案层之间。
7.如权利要求1所述的半导体装置,其特征在于,该第一氮氧化铜图案层直接与该第一铜图案层接触。
8.如权利要求1所述的半导体装置,其特征在于,该半导体装置更包括:
一氧化硅层,覆盖该第一氮氧化铜图案层,且与该第一氮氧化铜图案层接触。
9.如权利要求1所述的半导体装置,其特征在于,该半导体装置更包括:
一像素电极,与该漏极电性连接。
10.一种半导体装置的制造方法,其特征在于,该制造方法包括:
提供一第一基板;
于该第一基板上形成一栅极、一第一绝缘层以及一半导体图案,其中该第一绝缘层设置于该栅极与该半导体图案之间;
利用一物理气相沉积在该第一基板上形成一铜材料层;
通入氮气,以在该铜材料层上形成一氮化铜材料层;
图案化该铜材料层与该氮化铜材料层,以形成一第一铜材料层与一第一氮化铜材料层;以及
通入一氧化二氮,以形成一第一氮氧化铜图案层与一第一铜图案层,该第一氮氧化铜图案层覆盖该第一铜图案层,其中该第一铜图案层以及该第一氮氧化铜图案层构成一源极与一漏极,而该源极与该漏极彼此分离且各自与该半导体图案对应设置。
11.如权利要求10所述的半导体装置的制造方法,其特征在于,该制造方法更包括:
在形成该第一氮氧化铜图案层之后,通入硅烷,该硅烷与该一氧化二氮反应,以形成一氧化硅层,其中该氧化硅层覆盖该源极与该漏极。
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