CN108807421A - Tft阵列基板的制作方法及tft阵列基板 - Google Patents
Tft阵列基板的制作方法及tft阵列基板 Download PDFInfo
- Publication number
- CN108807421A CN108807421A CN201810603588.8A CN201810603588A CN108807421A CN 108807421 A CN108807421 A CN 108807421A CN 201810603588 A CN201810603588 A CN 201810603588A CN 108807421 A CN108807421 A CN 108807421A
- Authority
- CN
- China
- Prior art keywords
- layer
- photoresist
- drain electrode
- tft array
- array substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 88
- 239000002184 metal Substances 0.000 claims abstract description 54
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 239000010410 layer Substances 0.000 claims description 195
- 239000011241 protective layer Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 238000001039 wet etching Methods 0.000 claims description 10
- 238000004380 ashing Methods 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 abstract description 12
- 239000004973 liquid crystal related substance Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L2021/775—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810603588.8A CN108807421B (zh) | 2018-06-12 | 2018-06-12 | Tft阵列基板的制作方法及tft阵列基板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810603588.8A CN108807421B (zh) | 2018-06-12 | 2018-06-12 | Tft阵列基板的制作方法及tft阵列基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108807421A true CN108807421A (zh) | 2018-11-13 |
CN108807421B CN108807421B (zh) | 2020-11-24 |
Family
ID=64085269
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810603588.8A Active CN108807421B (zh) | 2018-06-12 | 2018-06-12 | Tft阵列基板的制作方法及tft阵列基板 |
Country Status (1)
Country | Link |
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CN (1) | CN108807421B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109712993A (zh) * | 2019-01-02 | 2019-05-03 | 南京中电熊猫平板显示科技有限公司 | 阵列基板及制造方法及显示装置 |
CN110085520A (zh) * | 2019-05-09 | 2019-08-02 | 深圳市华星光电技术有限公司 | 薄膜电晶体及其制作方法 |
CN112071867A (zh) * | 2020-09-17 | 2020-12-11 | 惠科股份有限公司 | 主动开关阵列基板、薄膜晶体管阵列基板的制造方法 |
CN112786618A (zh) * | 2019-11-06 | 2021-05-11 | 群创光电股份有限公司 | 半导体装置 |
CN113540126A (zh) * | 2021-07-19 | 2021-10-22 | 昆山龙腾光电股份有限公司 | 阵列基板及制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102148259A (zh) * | 2010-10-12 | 2011-08-10 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及其制造方法和液晶显示器 |
US20140134809A1 (en) * | 2012-11-13 | 2014-05-15 | Beijing Boe Display Technology Co., Ltd. | Method for manufacturing fan-out lines on array substrate |
EP3054483A1 (en) * | 2013-09-30 | 2016-08-10 | BOE Technology Group Co., Ltd. | Array substrate, manufacturing method therefor, and display apparatus |
-
2018
- 2018-06-12 CN CN201810603588.8A patent/CN108807421B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102148259A (zh) * | 2010-10-12 | 2011-08-10 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及其制造方法和液晶显示器 |
US20140134809A1 (en) * | 2012-11-13 | 2014-05-15 | Beijing Boe Display Technology Co., Ltd. | Method for manufacturing fan-out lines on array substrate |
EP3054483A1 (en) * | 2013-09-30 | 2016-08-10 | BOE Technology Group Co., Ltd. | Array substrate, manufacturing method therefor, and display apparatus |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109712993A (zh) * | 2019-01-02 | 2019-05-03 | 南京中电熊猫平板显示科技有限公司 | 阵列基板及制造方法及显示装置 |
CN110085520A (zh) * | 2019-05-09 | 2019-08-02 | 深圳市华星光电技术有限公司 | 薄膜电晶体及其制作方法 |
CN110085520B (zh) * | 2019-05-09 | 2020-12-08 | 深圳市华星光电技术有限公司 | 薄膜电晶体及其制作方法 |
US11233138B2 (en) | 2019-05-09 | 2022-01-25 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Thin film transistor and method of manufacturing same |
CN112786618A (zh) * | 2019-11-06 | 2021-05-11 | 群创光电股份有限公司 | 半导体装置 |
CN112071867A (zh) * | 2020-09-17 | 2020-12-11 | 惠科股份有限公司 | 主动开关阵列基板、薄膜晶体管阵列基板的制造方法 |
CN113540126A (zh) * | 2021-07-19 | 2021-10-22 | 昆山龙腾光电股份有限公司 | 阵列基板及制作方法 |
CN113540126B (zh) * | 2021-07-19 | 2024-03-12 | 昆山龙腾光电股份有限公司 | 阵列基板及制作方法 |
Also Published As
Publication number | Publication date |
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CN108807421B (zh) | 2020-11-24 |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210622 Address after: No. 338, Fangzhou Road, Suzhou Industrial Park, Suzhou, Jiangsu 215000 Patentee after: Suzhou Huaxing Optoelectronic Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: TCL China Star Optoelectronics Technology Co.,Ltd. |