CN108735829A - The p-type PERC double-sided solar batteries and preparation method thereof of back side photoelectric conversion efficiency can be promoted - Google Patents
The p-type PERC double-sided solar batteries and preparation method thereof of back side photoelectric conversion efficiency can be promoted Download PDFInfo
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- CN108735829A CN108735829A CN201810761379.6A CN201810761379A CN108735829A CN 108735829 A CN108735829 A CN 108735829A CN 201810761379 A CN201810761379 A CN 201810761379A CN 108735829 A CN108735829 A CN 108735829A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 34
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 29
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 29
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 119
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 119
- 239000004411 aluminium Substances 0.000 claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 59
- 239000010703 silicon Substances 0.000 claims abstract description 59
- 229940037003 alum Drugs 0.000 claims abstract description 44
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000004332 silver Substances 0.000 claims abstract description 32
- 229910052709 silver Inorganic materials 0.000 claims abstract description 32
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 57
- 238000007639 printing Methods 0.000 claims description 13
- 238000007650 screen-printing Methods 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 230000010412 perfusion Effects 0.000 claims description 3
- 239000002003 electrode paste Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000011267 electrode slurry Substances 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000007648 laser printing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses p-type PERC double-sided solar batteries that can promote back side photoelectric conversion efficiency and preparation method thereof, the solar cell includes the back electrode set gradually from bottom to top, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type silicon, front side silicon nitride film and positive silver electrode, the back electrode is made of the silver-colored main gate line of the back of the body that material is silver and the back of the body aluminium pair grid line that material is aluminium, it carries on the back aluminium pair grid line and the silver-colored main gate line of the back of the body is perpendicular, the back of the body aluminium pair grid line is made of the different alum gate line interval of thickness, wherein, thicker alum gate line is crude aluminum grid line, thinner alum gate line is thin alum gate line, there is laser groove among the crude aluminum grid line.The solar cell can two-sided absorption sunlight, it is simple in structure, be easy industrialization, the photoelectric conversion efficiency of battery can also be improved.The present invention discloses the preparation methods of the solar cell.
Description
Technical field
The present invention relates to technical field of solar batteries, in particular to the p-type of back side photoelectric conversion efficiency can be promoted
PERC double-sided solar batteries and preparation method thereof.
Background technology
Solar cell power generation is that solar energy is converted into electric energy using solar cell, since it is green ring
Product is protected, environmental pollution will not be caused, and be renewable resource, so in the case of current energy shortage, solar-electricity
Pond is a kind of novel energy having broad based growth future.
Existing PERC single sides solar cell is equipped with the entire back of the body that full aluminum back electric field is covered in silicon chip at the back side of battery
Face, the effect of full aluminum back electric field are to improve open-circuit voltage Voc and short circuit current Jsc, force minority carrier far from surface, few
Number Carrier recombination rate reduces, to improve battery efficiency on the whole.However, since full aluminum back electric field is opaque, have
The rear surface of solar cell of full aluminum back electric field can not absorb luminous energy, positive can only absorb luminous energy, photoelectric conversion efficiency is difficult to greatly
The raising of amplitude.
In recent years, with the further investigation of scientist and technical staff, it was found that a kind of PERC solar energy of passivating back
Battery can further improve the photoelectric conversion efficiency of battery.However the pellumina of cell backside and silicon nitride film are all insulation
Electronics cannot be transferred out and by film, therefore conventional way is the silicon nitride fluting below grid line, when printing grid line, aluminium paste
It can be filled into slotted zones and form Ohmic contact with P-type silicon, to realize conducting function.
The production process of p-type PERC double-sided solar batteries includes：Making herbs into wool, diffusion, etching, annealing, backside passivation layer are heavy
Product, PECVD back side coating films, front PECVD plated films, silk-screen printing, sintering, anti-LID annealing.Solar battery sheet turns by luminous energy
During changing electric energy into, the internal photo-generated carrier generated needs the electrode by external printing to collect and draw, then
It is connect with external circuit, to come out current transmission.
Above-mentioned silkscreen process is further subdivided into the back of the body primary gate electrode printing of solar cell, the secondary gate electrode of the back of the body
Printing and positive electrode printing.Positive electrode slurry and back electrode slurry are printed on crystal silicon solar battery on the front and back, through burning
Knot, plays the role of collected current.The design of backplate figure not only determine the back of the body passivation cell passivating back effect and
Electric current collection effect also determines the complexity of scale production process to influence the photoelectric conversion efficiency of battery.
It is, therefore, desirable to provide a kind of new double-sided solar battery, it should be simple in structure, it is easy industrialization, is improved simultaneously
The photoelectric conversion efficiency of battery.
Invention content
An object of the present invention is to provide a kind of p-type PERC double-sided solars that can promote back side photoelectric conversion efficiency
Battery, the solar cell can two-sided absorption sunlight, it is simple in structure, be easy industrialization, can also improve battery photoelectricity turn
Change efficiency.
What this purpose of the present invention was realized by the following technical solutions：Back side photoelectric conversion efficiency can be promoted
P-type PERC double-sided solar batteries, including set gradually from bottom to top back electrode, back side silicon nitride, backside oxide aluminium film,
P-type silicon, N-type silicon, front side silicon nitride film and positive silver electrode, the positive silver electrode is by the positive silver-colored main gate line and material that material is silver
For the secondary grid line composition of positive silver of silver, the positive secondary grid line of silver and positive silver-colored main gate line are perpendicular, and the back electrode is by the back of the body that material is silver
Silver-colored main gate line and the back of the body aluminium pair grid line that material is aluminium form, and back of the body aluminium pair grid line and the silver-colored main gate line of the back of the body are perpendicular, the solar-electricity
Pond is overleaf further opened with open the back side silicon nitride, backside oxide aluminium film after until P-type silicon laser slotting area, laser
Printing perfusion aluminum slurry in slotted zones, forms back of the body aluminum strip, and back of the body aluminium pair grid line is integrally printed as with the back of the body aluminum strip in laser slotting area
Type, back of the body aluminium pair grid line are connected by carrying on the back aluminum strip with P-type silicon, it is characterised in that：The back of the body aluminium pair grid line is by the different alum gate of thickness
Line interval forms, wherein thicker alum gate line is crude aluminum grid line, and thinner alum gate line is thin alum gate line, the crude aluminum grid line
Centre has laser groove.
The solar cell of the present invention proposes a kind of new back electrode, and the back of the body aluminium pair grid line in back electrode is different by thickness
Alum gate line interval forms, and has laser groove among crude aluminum grid line, can both substitute full aluminium in existing single side solar battery structure
The effect for carrying on the back electric field, also has the function of current-carrying conductor, suitable for being installed in the back side conduct of p-type PERC double-sided solar batteries
Back electrode.
Using the alum gate line of the different conventional equivalent width of alum gate line substitution of thickness, it is possible to reduce the shading of cell backside
Area increases the absorption of sunlight, promotes the photoelectric conversion efficiency at the back side.The corresponding alum gate line of laser groove is set as crude aluminum grid
Line, it is ensured that the exactitude position of laser groove and alum gate line in batch production.The solar cell has two-sided absorption luminous energy
Function, and photoelectric conversion efficiency is high.
In solar cells, usually also referred to as secondary gate electrode is secondary grid line, and primary gate electrode is main gate line, and thin grid line refers to pair
Gate electrode, because secondary gate electrode is thinner, primary gate electrode is thicker.
In the present invention, the width range of the crude aluminum grid line is 100~200um, and the width range of the thin alum gate line is
30~80um, the laser groove are rectangular slot, and the length range of laser groove is 1~80mm, and width range is 10~80um.
In the present invention, the aluminium paste that the back of the body aluminium pair grid line uses, can be direct to burn type aluminium paste containing fluoride
It buys on the market.
In the present invention, the back of the body aluminium pair grid line uses symmetry figure or shift type figure.
Compared with prior art, the present invention has following remarkable result：
(1) in solar cell of the invention, the back of the body aluminium pair grid line in back electrode is by the different alum gate line interval group of thickness
At, using the alum gate line of the different conventional equivalent width of alum gate line substitution of thickness, while there is laser groove among crude aluminum grid line,
The shading-area that cell backside can be reduced increases the absorption of sunlight, promotes the photoelectric conversion efficiency of cell backside.
(2) in solar cell of the invention, the corresponding alum gate line of laser groove is set as crude aluminum grid line, it is ensured that batch
The exactitude position of laser and alum gate line in production.
(3) solar cell of the invention can save the dosage of aluminium paste, and test result shows to save 5%-20%'s
Aluminium paste reduces production cost, additionally it is possible to realize two-sided absorption luminous energy, be significantly expanded the application range of solar cell and improve light
Photoelectric transformation efficiency.
(4) in solar cell of the invention, the aluminium paste that alum gate line uses ensures for that can burn type aluminium paste in no laser
Contact of the aluminium paste with silicon is realized in the region of fluting, improves the fan-out capability of electric current.
(5) solar battery structure of the invention is simple, is easy industrialization, while the opto-electronic conversion of cell backside can be improved
Efficiency, test result show that photoelectric conversion efficiency 0.05%-0.3% can be improved.
The second object of the present invention is to provide the above-mentioned p-type PERC double-sided solars that can promote back side photoelectric conversion efficiency
The preparation method of battery, the preparation method are easily operated.
What this purpose of the present invention was realized by the following technical solutions：Back side photoelectric conversion efficiency can be promoted
The preparation method of p-type PERC double-sided solar batteries, which is characterized in that this method comprises the following steps：
(1) matte is formed in front side of silicon wafer and the back side, the silicon chip is P-type silicon；
(2) it is diffused in the front side of silicon wafer, forms N-type silicon, i.e. N-type emitter；
(3) phosphorosilicate glass and periphery P N knots that removal diffusion process is formed；
(4) silicon chip back side is polished, forms the back surface of high reflectance；
(5) backside oxide aluminium film is deposited in silicon chip back side；
(6) in the backside deposition back side silicon nitride of pellumina；
(7) in the front deposition front side silicon nitride film of N-type silicon；
(8) laser slotting is carried out to silicon chip back side, opened after back side silicon nitride, backside oxide aluminium film until silicon chip, shape
At laser slotting area；
(9) back of the body silver main gate line of back electrode is printed using silk-screen printing in the silicon chip back side, is dried；
(10) aluminum slurry is printed in laser slotting area, forms back of the body aluminum strip, and back of the body aluminum strip is integrally printed as with back of the body aluminium pair grid line
Type, back of the body aluminium pair grid line are made of the different alum gate line interval of thickness, wherein thicker alum gate line is crude aluminum grid line, thinner aluminium
Grid line is thin alum gate line, has laser groove, drying among the crude aluminum grid line；
(11) the positive silver electrode slurry of printing is etched using silk-screen printing or ink-jet mode in the front of the front side silicon nitride film
Material；
(12) high temperature sintering is carried out to silicon chip, forms back electrode and positive silver electrode；
(13) anti-LID annealings are carried out to silicon chip, p-type PERC double-sided solar batteries is made.
The temperature in high temperature sintering in the step (12) is 780 DEG C~820 DEG C.
The preparation method is easy to operate, with current production line good compatibility.
Description of the drawings
Invention is further described in detail with reference to the accompanying drawings and detailed description.
Fig. 1 is the p-type PERC double-sided solar batteries embodiment one that the present invention can promote back side photoelectric conversion efficiency
Front view；
Fig. 2 is the p-type PERC double-sided solar batteries embodiment one that the present invention can promote back side photoelectric conversion efficiency
Rearview；
Fig. 3 is the p-type PERC double-sided solar batteries embodiment one that the present invention can promote back side photoelectric conversion efficiency
Overall structure sectional view；
Fig. 4 is in the p-type PERC double-sided solar batteries embodiment one that the present invention can promote back side photoelectric conversion efficiency
Carry on the back the arrangement schematic diagram of aluminium pair grid line；
Fig. 5 is in the p-type PERC double-sided solar batteries embodiment two that the present invention can promote back side photoelectric conversion efficiency
Carry on the back the arrangement schematic diagram of aluminium pair grid line.
Reference sign
1, back electrode, 11, the silver-colored main gate line of the back of the body；12, aluminium pair grid line is carried on the back；121, crude aluminum grid line；
121a, laser groove；122, thin alum gate line；2, laser slotting area, 3, back side silicon nitride,
4, backside oxide aluminium film, 5, P-type silicon, 6, N-type silicon, 7, front side silicon nitride film,
8, positive silver electrode, 81, positive silver-colored main gate line；82, the secondary grid line of positive silver；9, aluminum strip is carried on the back.
Specific implementation mode
Embodiment one
The present invention can promote the embodiment of the p-type PERC double-sided solar batteries of back side photoelectric conversion efficiency just like Fig. 1
Shown in Fig. 4, including the back electrode 1, back side silicon nitride 3, backside oxide aluminium film 4, P-type silicon 5, the N that set gradually from bottom to top
Type silicon 6, front side silicon nitride film 7 and positive silver electrode 8, positive silver electrode 8 are silver-colored by the positive silver-colored main gate line 81 that material is silver and material
The positive secondary grid line 82 of silver forms, and the positive secondary grid line 82 of silver and positive silver-colored main gate line 81 are perpendicular, and back electrode 1 is by the back of the body silver main grid that material is silver
Line 11 and the back of the body aluminium pair grid line 12 that material is aluminium form, and back of the body aluminium pair grid line 12 and the silver-colored main gate line 11 of the back of the body are perpendicular.
Solar cell is overleaf further opened with open back side silicon nitride 3, backside oxide aluminium film 4 after until P-type silicon 5
Laser slotting area 2, the interior printing perfusion aluminum slurry in laser slotting area 2, forms back of the body aluminum strip 9, carries on the back aluminium pair grid line 12 and laser slotting area 2
Interior 9 one printing molding of back of the body aluminum strip, back of the body aluminium pair grid line 12 are connected by carrying on the back aluminum strip 9 with P-type silicon 5.
It carries on the back aluminium pair grid line 12 and uses symmetry figure, the aluminium paste used is burns type aluminium paste containing fluoride.Carry on the back aluminium
Secondary grid line 12 is made of the different alum gate line interval of thickness, wherein thicker alum gate line is crude aluminum grid line 121, crude aluminum grid line 121
Width be 150um, thinner alum gate line is thin alum gate line 122, and the width of thin alum gate line 122 is 50um, among crude aluminum grid line
It is rectangular slot with laser groove 121a, laser groove 121a, the length of laser groove 121a is 40mm, width 40um.
As the transformation of the present embodiment, the width of crude aluminum grid line 121 can also within the scope of 100~200um value, thin aluminium
The width of grid line 122 can also within the scope of 30~80um value, the length of laser groove 121a can also be within the scope of 1~80mm
Value, width can also within the scope of 10~80um value.
In the solar cell of the present embodiment, 12 line of back of the body aluminium pair grid in back electrode is by the different alum gate line interval group of thickness
At using the alum gate line of the different conventional equivalent width of alum gate line substitution of thickness, while with laser among crude aluminum grid line 121
Slot 121a, it is possible to reduce the shading-area of cell backside increases the absorption of sunlight, promotes the opto-electronic conversion effect of cell backside
Rate can also save the dosage of aluminium paste to promote the photoelectric conversion efficiency of entire solar cell.
The preparation method of the above-mentioned p-type PERC double-sided solar batteries that can promote back side photoelectric conversion efficiency, including such as
Lower step：
(1) matte is formed in front side of silicon wafer and the back side, silicon chip is P-type silicon；
(2) it is diffused in front side of silicon wafer, forms N-type silicon, i.e. N-type emitter；
(3) phosphorosilicate glass and periphery P N knots that removal diffusion process is formed；
(4) silicon chip back side is polished, forms the back surface of high reflectance；
(5) backside oxide aluminium film is deposited in silicon chip back side；
(6) in the backside deposition back side silicon nitride of pellumina；
(7) in the front deposition front side silicon nitride film of N-type silicon；
(8) laser slotting is carried out to silicon chip back side, opened after back side silicon nitride, backside oxide aluminium film until silicon chip, shape
At laser slotting area；
(9) back of the body silver main gate line of back electrode is printed using silk-screen printing in silicon chip back side, is dried；
(10) aluminum slurry is printed in laser slotting area, forms back of the body aluminum strip, and back of the body aluminum strip is integrally printed as with back of the body aluminium pair grid line
Type, back of the body aluminium pair grid line are made of the different alum gate line interval of thickness, wherein thicker alum gate line is crude aluminum grid line, thinner aluminium
Grid line is thin alum gate line, has laser groove, drying among crude aluminum grid line；
(11) the positive silver electrode paste of printing is etched using silk-screen printing or ink-jet mode in the front of front side silicon nitride film；
(12) high temperature sintering that 800 DEG C are carried out to silicon chip, forms back electrode and positive silver electrode；
(13) anti-LID annealings are carried out to silicon chip, p-type PERC double-sided solar batteries is made.
In the present embodiment, the temperature in high temperature sintering in step (12) can also take within the scope of 780 DEG C~820 DEG C
Value.
Embodiment two
The present invention can promote the embodiment two of the p-type PERC double-sided solar batteries of back side photoelectric conversion efficiency and implement
Example one the difference is that, as shown in figure 5, in embodiment two, back of the body aluminium pair grid line 12 uses shift type figure, the system of embodiment two
Preparation Method and embodiment one are identical.
The above embodiment of the present invention is not limiting the scope of the present invention, and embodiments of the present invention are not limited to
This, all this kind the above according to the present invention is not departing from this according to the ordinary technical knowledge and customary means of this field
Under the premise of inventing above-mentioned basic fundamental thought, modification, replacement or change to other diversified forms that above structure of the present invention is made
More, it should all fall within the scope and spirit of the invention.
Claims (6)
1. the p-type PERC double-sided solar batteries of back side photoelectric conversion efficiency can be promoted, including set gradually from bottom to top
Back electrode, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type silicon, front side silicon nitride film and positive silver electrode, it is described just
Silver electrode is made of the positive silver-colored secondary grid line that the positive silver-colored main gate line that material is silver and material are silver, the positive secondary grid line of silver and positive silver-colored main gate line
Perpendicular, the back electrode is made of the silver-colored main gate line of the back of the body that material is silver and the back of the body aluminium pair grid line that material is aluminium, carries on the back aluminium pair grid
Line and the silver-colored main gate line of the back of the body are perpendicular, and the solar cell, which is overleaf further opened with, opens the back side silicon nitride, back side oxygen
Up to printing perfusion aluminum slurry in the laser slotting area of P-type silicon, laser slotting area after change aluminium film, is formed and carry on the back aluminum strip, back of the body aluminium pair grid
Integrally printing is molded line with the back of the body aluminum strip in laser slotting area, and back of the body aluminium pair grid line is connected by carrying on the back aluminum strip with P-type silicon, and feature exists
In：The back of the body aluminium pair grid line is made of the different alum gate line interval of thickness, wherein thicker alum gate line is crude aluminum grid line, more carefully
Alum gate line be thin alum gate line, there is laser groove among the described crude aluminum grid line.
2. the p-type PERC double-sided solar batteries of back side photoelectric conversion efficiency, feature can be promoted as described in claim 1
It is：The width range of the crude aluminum grid line is 100~200um, and the width range of the thin alum gate line is 30~80um, described
Laser groove be rectangular slot, the length range of laser groove is 1~80mm, and width range is 10~80um.
3. the p-type PERC double-sided solar batteries of back side photoelectric conversion efficiency, feature can be promoted as described in claim 1
It is：It is described to carry on the back the aluminium paste that aluminium pair grid line uses to burn type aluminium paste containing fluoride.
4. the p-type PERC double-sided solar electricity as described in any one of claims 1 to 3 that back side photoelectric conversion efficiency can be promoted
Pond, it is characterised in that：The back of the body aluminium pair grid line uses symmetry figure or shift type figure.
5. as Claims 1-4 any one of them can promote the p-type PERC double-sided solar electricity of back side photoelectric conversion efficiency
The preparation method in pond, which is characterized in that this method comprises the following steps：
(1) matte is formed in front side of silicon wafer and the back side, the silicon chip is P-type silicon；
(2) it is diffused in the front side of silicon wafer, forms N-type silicon, i.e. N-type emitter；
(3) phosphorosilicate glass and periphery P N knots that removal diffusion process is formed；
(4) silicon chip back side is polished, forms the back surface of high reflectance；
(5) backside oxide aluminium film is deposited in silicon chip back side；
(6) in the backside deposition back side silicon nitride of pellumina；
(7) in the front deposition front side silicon nitride film of N-type silicon；
(8) laser slotting is carried out to silicon chip back side, opened after back side silicon nitride, backside oxide aluminium film until silicon chip, forms and swash
Light slotted zones；
(9) back of the body silver main gate line of back electrode is printed using silk-screen printing in the silicon chip back side, is dried；
(10) aluminum slurry is printed in laser slotting area, forms back of the body aluminum strip, integrally printing is molded back of the body aluminum strip with back of the body aluminium pair grid line, the back of the body
Aluminium pair grid line is made of the different alum gate line interval of thickness, wherein thicker alum gate line is crude aluminum grid line, and thinner alum gate line is
Thin alum gate line, the crude aluminum grid line centre have laser groove, drying；
(11) the positive silver electrode paste of printing is etched using silk-screen printing or ink-jet mode in the front of the front side silicon nitride film；
(12) high temperature sintering is carried out to silicon chip, forms back electrode and positive silver electrode；
(13) anti-LID annealings are carried out to silicon chip, p-type PERC double-sided solar batteries is made.
6. the preparation of the p-type PERC double-sided solar batteries of back side photoelectric conversion efficiency can be promoted as claimed in claim 5
Method, it is characterised in that：The temperature in high temperature sintering in the step (12) is 780 DEG C~820 DEG C.
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| CN110165010A (en) * | 2019-05-23 | 2019-08-23 | 江西展宇新能源股份有限公司 | A kind of two-sided PERC battery and preparation method thereof |
| CN110310998A (en) * | 2019-06-05 | 2019-10-08 | 国家电投集团西安太阳能电力有限公司 | A kind of electrode structure of back contact battery |
| CN110854219A (en) * | 2019-12-24 | 2020-02-28 | 浙江中晶新能源股份有限公司 | Efficient N-type battery piece and preparation method thereof |
| CN111223945A (en) * | 2020-03-24 | 2020-06-02 | 浙江爱旭太阳能科技有限公司 | PERC battery with novel front structure |
| CN111341885A (en) * | 2020-03-24 | 2020-06-26 | 浙江爱旭太阳能科技有限公司 | Preparation method of single crystal PERC battery without auxiliary grid on front surface |
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