CN107408584A - Photovoltaic solar cell - Google Patents
Photovoltaic solar cell Download PDFInfo
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- CN107408584A CN107408584A CN201680014291.7A CN201680014291A CN107408584A CN 107408584 A CN107408584 A CN 107408584A CN 201680014291 A CN201680014291 A CN 201680014291A CN 107408584 A CN107408584 A CN 107408584A
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- fingertip
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- fingertips
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- 239000004065 semiconductor Substances 0.000 claims abstract description 79
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 230000004888 barrier function Effects 0.000 claims abstract description 35
- 238000009413 insulation Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 17
- 230000008719 thickening Effects 0.000 claims description 6
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 5
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 5
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 5
- 238000007373 indentation Methods 0.000 claims description 4
- 230000005670 electromagnetic radiation Effects 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 55
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The present invention relates to photovoltaic solar cell, it has at least one semiconductor layer, the contacting structure of the insulating barrier of at least one electric insulation and at least one metal, wherein the insulating barrier is arranged between semiconductor layer and the contacting structure, and the insulating barrier has multiple contacting breach, the contacting structure forms electrical contact in contacting breach and semiconductor layer in contacting area, at least in contacting area respectively by forming a doped region to semiconductor layer doped metal wherein in the semiconductor layer, the contacting structure is at least partly made up of the metal.It is a feature of the present invention that the contacting structure has multiple fingertips, each fingertip extends in multiple contacting areas and/or along multiple contacting areas, and wherein the fingertip has local cross section increase in contacting area.
Description
The present invention relates to the photovoltaic solar cell of preamble according to claim 1.
Photovoltaic solar cell is used to incident photon energy being converted to electric energy.Therefore, typical solar cell has
The insulating barrier and hard contact engaging structure of semiconductor layer, electric insulation.
Absorbed photon produces carrier pair in semiconductor layer, and it is separated at pn-junction.Hard contact connects knot
Structure is connected with p doped regions or n doped regions, thus carrier can be output.By another hard contact engaging structure or
By the back side metal structure in whole face, the carrier with the semiconductor structure region of opposite doping type is accordingly exported.
The insulating barrier is arranged between semiconductor layer and contacting structure, especially to reduce because minority carrier is in gold
Loss and thus caused loss caused by restructuring at category/interface.Insulating barrier has multiple contacting breach, should
Contacting structure forms electrical contact in the contacting indentation, there and semiconductor layer in contacting area.
Also it is aware of, is carried to reduce a small number of of the remaining interface between the metal in semiconductor layer and semiconductor
Stream restructuring, in contacting area respectively by being provided with doped region to semiconductor layer doped metal, the metal is that contact connects
The constituent of logical structure.
It is possible thereby to the gold of the hard contact engaging structure is used in solar cell manufacturing process by plain mode
Category forms so-called high local concentrations doped region come the contacting area in semiconductor layer, thus described in a manner of inexpensive
Reach the reduction of above-mentioned minority carrier restructuring in region.
Although succeeded in terms of reducing the manufacturing cost of photovoltaic solar cell and/or improving its efficiency, in city
Still there is high cost pressure on field.The occasion in addition, photovoltaic solar cell now has a wide range of applications, thus can not total security
Demonstrate,prove the optimal placement for the irradiation bomb such as sun.
Therefore, the present invention is based on following task, improves the photovoltaic with insulating barrier and contacting structure as described above
Solar cell, so as to improve efficiency because realizing loss to reduce.
The task is completed by photovoltaic solar cell according to claim 1.According to the photovoltaic solar of the present invention
The Advantageous embodiments of battery can be found in claim 2-15.
The present invention based on the recognition that, especially as previously described have contacting structure solar cell in, touch
Loss in point engaging structure confirms it is in contacting gap regions：
As it was previously stated, the metal of contacting structure is used to form part in contacting indentation, there in the semiconductor layer
Doped region.But semiconductor layer part doping metals are thus not only carried out, the contact that semi-conducting material is typically also added to metal connects
In logical structure.Thus one, the electric conductivity of the contacting structure in this region reduces.
Research shows, especially when forming contacting structure in the case of using fingertip known per se, fingertip
Line resistance is in above-mentioned solar battery structure by adding the semi-conducting material in fingertip in contacting gap regions
And increase as follows：Because line resistance increases and corresponding Ohmic power loses and the aobvious of photovoltaic solar cell gross efficiency occurs
Writing reduces.
The loss can be avoided or at least mitigate according to the photovoltaic solar cell of the present invention：
There is the insulating barrier of at least one semiconductor layer, at least one electric insulation according to the photovoltaic solar cell of the present invention
With at least one hard contact engaging structure.The insulating barrier is arranged between semiconductor layer and the contacting structure.
In order to form the electrical conductive communication of semiconductor layer using contacting structure, there are the insulating barrier multiple contactings to lack
Mouthful, in the contacting indentation, there, the contacting structure forms electrical contact with semiconductor layer in contacting area.
It is also as described above, in the semiconductor layer at least contacting area respectively by semiconductor layer doped metal and
Doped region is formed, the metal is all or part of constituent of hard contact engaging structure.Thus one, can mitigate by
Carrier in the semiconductor layer is in the loss as described above caused by the restructuring of the surface in contacting area.
Importantly, the contacting structure has multiple fingertips, each fingertip extends past multiple contactings
Area and/or along multiple contacting areas extend, wherein, the fingertip has partial cross-section increase in contacting area.
The embodiment is based on the recognition that, it is necessary to such contacting structure, it covers part as described above and mixed
Miscellaneous area, the contacting structure are not whole face metallization structure example whole face back face metalization structures as the aforementioned.It is also required to so
Contacting structure, it by the covering of metal level whole face because at least partly do not allow incident photon to pass through.By so
The contacting structure with multiple fingertips, therefore can realize and apply such contacting structure in solar-electricity
Towards the solar battery front side of light source in the use of pond.It is also feasible to apply in rear surface of solar cell, such as to be formed such as
Lower two-sided photovoltaic solar cell be described in detail.
Here, research shows, metallized different from whole face, contacting structure has been designed to that multiple fingertips are brought
The danger of Ohmic power loss is stated, because the local increase of the line resistance in fingertip.
The present invention photovoltaic solar cell in, these fingertips accordingly multiple contacting areas scope extension and/or
Extend along multiple contacting areas, wherein, there is the fingertip partial cross-section increase and/or the fingertip to touch in contacting area
Point, which connects area, has the conducting structure for not covering contacting area electrically in parallel.
Therefore, partial cross-section increase may compensate or at least mitigate line resistance rate of the fingertip in contacting breach
Local increase.As a result, avoided or extremely by being designed to have in contacting area partial cross-section increase by fingertip to realize
Foregoing Ohmic power loss is reduced less.
These fingertips preferably have parallel to surface of insulating layer and perpendicular to fingertip longitudinal extension in contacting area
Those widened sections.
Thus, thus by it is simple and especially technology it is uncomplicated realize in a manner of by fingertip in contacting area extremely
Few local widening increases to obtain partial cross-section.
Now particularly advantageously, fingertip is overlappingly formed in contacting area with insulating barrier.It is derived from reducing foregoing
The double effectses of Ohmic power loss：
On the one hand, by realizing that cross section increases in widening for contacting area, so as to compared to not having cross section increase
Fingertip, the transmission resistance in fingertip reduces because cross section increases.In addition, do not have in the fingertip region overlapping with insulating barrier
There is addition or only add semi-conducting material on a small quantity, because the region is not in contact with semiconductor layer or at least without directly manufacturing
Semiconductor layer is contacted in journey.As a result, the line resistance rate in the fingertip region overlapping with insulating barrier is thus less than (because a small amount of
Add semi-conducting material) contacting face or region directly above contacting face are next to (because adding more half
Conductor material).Therefore in the receiver-mode (rx) filter configuration it is considered that the fingertip region of higher electric resistivity and the fingertip area of low resistivity
Domain is connected in parallel, so as to due to the addition of semi-conducting material, generally without or only slight fingertip line resistance increase,
Therefore associated power loss is avoided or at least reduced.
In an especially advantageous embodiment, now these fingertips should in the covering in the region in contacting area
Insulating barrier.Thus one, on the one hand strengthen foregoing effect in parallel.In addition, relatively low add is needed when solar cell manufactures
Work precision, because referring to around contacting face in the presence of metallization to the overlapping of the insulating barrier, thus obtain on adjusting accuracy
Higher acceptable tolerance.
Also following the completing the present invention of the task：Fingertip has metal conduction structure electrically in parallel in contacting area, its
Contacting area is not covered.Therefore, electrically the metal conduction structure of parallel connection does not have or only had the semiconductor material added on a small quantity
Material, because they do not cover contacting area.Because cover fingertip region and the aforesaid conductive metal conduction knot in contacting area
Structure is in parallel, therefore passes through the metal conduction structure compensation of electric parallel connection or at least reduce because semi-conducting material addition is and caused by
Line resistance increases.Now in the scope of the invention, or define partial cross-section increase or metal electrically in parallel biography
Guide structure.Also in the scope of the invention, both increased provided with partial cross-section, and also be provided with the metal conduction knot of electric parallel connection
Structure.
Electrically metal conduction structure in parallel is preferably formed in the form of parallel " pair refers to " of part.It is " finger " that these pairs, which refer to,
Part, but compartment of terrain extends parallel to fingertip trunk and therewith in the region in contacting area.Contacting area it
Preceding and/or afterwards, preferably before it and afterwards, pair refers to be conductively connected with fingertip trunk, preferably with material juncture.
Now it is particularly advantageous that the trunk does not cover contacting area, therefore simply pair refers to and covers contacting area.
Thus advantages below, i.e., the shadow that the electric current flowing in trunk is not affected by or only slightly added by semi-conducting material are on the one hand obtained
Ring.In addition, these pairs refer in the region in contacting area with trunk interval, even if so as in fingertip as manufacture, quilt
The material that the semi-conducting material that pair refers in metal also or will not only enter fingertip trunk on a small quantity is added, because between having space
Every.
These contacting breach preferably arrange in pairs, wherein, belong to a pair of contacting breach and be arranged in fingertip
Opposite sides thereof.
In this Advantageous embodiments, the main line or trunk of fingertip at this to being extended past between contacting breach, its
In, the fingertip has those widened sections in the region of contacting breach, so as to which it at least covers the contacting breach.
Therefore, the fingertip has trunk, and the trunk extends through between two paired contacting breach.Fingertip master
Do with the those widened sections in side shoot form or with side joint widening portion in contacting gap regions, it at least covers the contact
Connect breach.
Therefore, the trunk of fingertip extends and thus not had in this region on the insulating layer between contacting breach
Or only there is the smaller semi-conducting material added on a small quantity, do not have correspondingly or only there is the increase of less line resistance rate.Cause
For the covering of contacting breach, thus carrier is laterally led to fingertip trunk.It is but total in the case of laterally leading
Current density ratio is relatively low, because carrier only need to be transported to fingertip trunk from each corresponding contacting breach in the region.
And the carrier of adjacent pairs of contacting breach flows through fingertip trunk, its as previously described not by or only slightly by half
The influence that conductor material adds.
As the replacement and/or supplement of the design structure that partial cross-section increase is caused by fingertip local widening, this is touched
Refer to has partial thickening in contacting area.In the case, in the case of constant width, only can be obtained by thickening
Partial cross-section increases, to reduce Ohmic power loss as previously mentioned.
Increase and accordingly compare significantly it is also possible to obtain bigger cross section by the combination widened and thickened
Reduce transmission resistance.
Contacting structure preferably includes multiple fingertips and at least one bus, wherein, the fingertip is preferably engaged with material
Mode be conductively connected with bus.
Bus is the regional area of contacting structure herein, and it collects the carrier of multiple fingertips and transfers to joint
Part, such as battery unit connector or the weld pad for being connected with external circuit or battery unit connector.
The bus does not cover contacting area preferably, i.e. bus only by the fingertip and by fingertip cover contact surface with
The semiconductor structure is conductively connected.Thus obtain advantages below, the electric conductivity in bus not because of the addition of semi-conducting material and
Reduce.
Fingertip and bus can have the structure of contacting grid known per se, especially comb shape or double comb shape contacts
Grid.Fingertip preferably extends in parallel, and bus extends perpendicular to fingertip.Thus, it is possible thereby on bus and fingertip (or on
Bus and fingertip trunk in a foregoing preferred embodiment) substantially employ geometry and system known per se
Make method.
In another preferred embodiment, contacting structure includes multiple fingertips, wherein, the fingertip does not have each other
There is metallic conduction connection.Therefore fingertip is conductively connected at most by semiconductor layer or by existing by external circuit afterwards, or
Person for example manufactured in solar module and by solar cell with multiple adjacent solar cell wiring when by additional
Part is present.
Thus there is low cost manufacture, because not forming the bus as solar cell composition part, the bus connects
Contact refers to.
At least one of contacting face, it is particularly preferred that whole contacting faces preferably has a Longitudinal extending chi
Very little, herein, contacting face is set perpendicular to the longitudinal extension of fingertip.In this Advantageous embodiments, fingertip is therefore
Can be considered as being made up of a trunk, in the laterally disposed contacting face of the trunk, contacting face preferably substantially perpendicular to
Fingertip trunk extends.Herein, the fingertip also at least covers contacting face, preferably also insulation of the covering around contacting face
Layer region.On conductive path, therefore the contacting face because of its longitudinal extension and can cover touching for contacting face
Refer to region and be considered as " micro- finger ", carrier is supplied fingertip trunk by it.
Thus the advantages of obtaining as already identified above, i.e. do not have in fingertip trunk or only slight line resistance is because of half
Conductor material is inserted and increased.In addition, to provide semiconductor layer good by contacting face for the longitudinal extension in contacting face
The possibility covered well, it is extra whereby to reduce because the line resistance in semiconductor layer is the so-called series resistance losses in semiconductor layer
Caused by loss because the flow path of the majority carrier in semiconductor layer is shorter.
In the case, entering for the loss of the Ohmic power in contacting structure is obtained in another preferred embodiment
One step reduces, here, fingertip in the contacting face with longitudinal extension with along the longitudinal extension towards fingertip
The cross-sectional area of increase, especially preferably there is the width of increase.Above-mentioned micro- finger is therefore according to the shape known per se of " taper refers to "
Form.To be considered in the case, on whole contacting face, carrier enters the metal in covering contacting face
Change structure, thus total current increases along the electric current main flow direction in the contacting structure along contacting face.Therefore, edge
Principal current direction and be herein the continuous of fingertip trunk direction or classification the incremental cross section of nearly singular integral with regard to this result in
Lower optimization, i.e. one side current density because increase cross section without or only slightly increase, on the other hand, can keep to the greatest extent
Small solar cell surface is measured to be blocked by contacting structure.
As it was previously stated, the manufacture method of localized metallic doping is carried out in contacting face in this contacting structure
Also result in semi-conducting material to be added into metallization structure in the contacting face region, wherein the metal is metallization
The unique or part of structure forms.Therefore the fingertip can include the semi-conducting material of the semiconductor layer in contacting area.
Foregoing contacting structure, which is particularly suitable for use in, is placed in rear surface of solar cell.Thus, it is possible to keep known per se
And preferable local contacting structure (by the local breach in insulating barrier to form contacting face) and in semiconductor layer
In high local concentrations doping in the region of contacting face, while form double-sided solar battery：
Because contacting structure has been designed to multiple fingertips, therefore the whole face metallization at the back side need not be provided.Overleaf
The region not covered by contacting structure, photon, which can thus enter, semiconductor layer and contribute to carrier to produce.This hair
Therefore bright photovoltaic solar cell is preferably formed in the form of double-sided solar battery, therefore from front and from the photograph of the back side
The photon of solar cell can aid in electric current generation.
The contacting structure is advantageously used for contacting p doped regions：For forming the typical case of contacting structure
Metal is, for example, aluminium.As described above, it can realize that the high local concentrations in the p doped regions of solar cell are mixed by the metal
It is miscellaneous, but be not in doped region in contrast i.e. in n doped regions.
There is these actual solar cells manufactured n to adulterate emitter stage, and accordingly have p impure bases.Therefore, this is touched
Point engaging structure is advantageously used for the base stage of contacting solar cell.
But the solar cell with n impure bases is increasingly paid close attention to because of the improvement of material property.At this
In the solar cell of sample, contacting structure is advantageously accordingly used for contacting p doping emitter stages, such as when use is borrowed
When helping the p of aluminium to adulterate emitter stage.
Photovoltaic solar cell is especially advantageously formed in the form of PERC solar cells.The base of such solar cell
This structure Blakers et al. (1989) " 22.8% high-efficiency silicon solar cell " (Applied Physics journal, 55 (13),
Page 1363, DOI:10.1063/1.101596) in be described.
Partial cross-section increase is preferably so designed that, compared on principal current direction with contacting section every fingertip
The cross-sectional area in region, cross-sectional area in the region in contacting area with least multiple 1.2, preferably with least multiple 1.5,
Especially increased with least multiple 2.
Partial cross-section increase is preferably so designed that, compared on principal current direction with contacting section every fingertip
The cross-sectional area in region, cross-sectional area in the region in contacting area with maximum multiple 10, it is preferably maximum with multiple 7, it is outstanding
Its maximum is increased with multiple 5.
On the principal current direction of fingertip or fingertip trunk, the partial cross-section increases best maximum and extends in principal current side
One times of the double length of upward contact surface length, preferably at most extension contact surface length, especially preferably maximum extension contact
The half of face length.
Typically, at least one trunk of the fingertip or fingertip has a longitudinal extension.In the case, principal current side
Extend to generally along the longitudinal extension.
As it was previously stated, avoid the adverse effect caused by semi-conducting material is added in fingertip by the present invention.One
As, the fingertip in the region of contacting face have semi-conducting material according to more than 20wt% (percentage by weight), especially greater than
The partial accession of 12.6wt% concentration, this concentration in fingertip occur especially in doped region and especially preferably connect by contact
The metal of logical structure is in the extension oriented growth on the semiconductor for the liquid mixed phase being made up of metal and semiconductor.
It is spaced that fingertip extends these contacting areas thereon and/or extended along.Between contacting area
Distance preferably at least 100 μm, especially at least 200pm, with mitigate because the recombination in contact zone and caused by negatively affect.
Series resistance act on and recombination between optimization be generally present in a preferred embodiment contacting offset from
In the case of in the range of 100 μm of -4mm, especially in the range of 200 μm of -3mm.
Especially in the p doped semiconductor materials especially contacting structure of p impure bases is connected, determined by technical process
Surely there is adverse effect of the addition to electrical conduction quality of semi-conducting material.Therefore, the contacting structure is preferably designed
P doped regions and especially base stage for contacting solar cell.In particular it is preferred that the contacting structure setting exists
Back to the rear surface of solar cell of irradiation bomb during use.
Present invention is particularly suitable for the design of the contacting structure with multiple fingertips known per se.Therefore,
The preferably extension and/or along multiple phases in the multiple contacting areas being spaced respectively of whole fingertips of the contacting structure
The contacting area extension being mutually spaced, wherein, there is the fingertip partial cross-section increase and/or the fingertip to exist in contacting area
Contacting area has the metal conduction structure for not covering contacting area electrically in parallel.
Hereinafter, other preferred features and embodiment are described with accompanying drawing in conjunction with the embodiments, wherein：
Fig. 1 is illustrated according to the present invention in first of the photovoltaic solar cell in the form of PERC solar cells by solid
Embodiment,
Fig. 2 shows the contacting structure according to Fig. 1 solar cell,
Fig. 3 shows the optional contacting structure of the replacement including micro- finger according to second embodiment,
Fig. 4 shows another alternate embodiments of the contacting structure without bus according to 3rd embodiment,
Fig. 5 illustrates fourth embodiment with section view, and wherein section plane extends past fingertip, and
Fig. 6 shows the 5th embodiment, wherein, the fingertip does not cover contacting in contacting area with electrically parallel connection
The conducting structure in area.
All figures show the explanatory view of chi not in scale.Identical reference in figs. 1-5 represents phase
Same or effect identical parts.
Fig. 1 shows the first embodiment of the photovoltaic solar cell with PERC structures according to the present invention：
Solar cell has the semiconductor layer 1 in p doped silicon wafer forms.In Fig. 1 view, solar cell
The back side lower is illustrated in upper and solar cell front.
N doping emitter stages 2 are formed on the front of solar cell.In order to optical property improve it is (reduce reflection) and blunt
Change, anti-reflecting layer 3 also is set in front, what it was formed in the form of dielectric layer and was therefore still electrically insulated.Set on anti-reflecting layer 3
There is (not shown) metal front contact known per se to connect grid, it is in partial penetration anti-reflecting layer 3 so as to according to known per se
Mode is formed to be conductively connected with emitter stage 2.
The insulating barrier 4 of electric insulation is set in rear surface of solar cell, it is herein in the form of silicon nitride layer.
Contacting structure 5 is provided with insulating barrier 4, therefore it is touched according to the metal back side of Fig. 1 solar cell
Point engaging structure.Insulating barrier 3 has multiple contacting breach (such as contacting breach 6).These contacting breach are for example
Produced by the local laser ablation of insulating barrier.At contacting breach 6, contacting structure 5 penetrate insulating barrier 4 and with
Semiconductor layer 1 forms conductive contact so as to the p impure bases of contacting photovoltaic solar cell.
In the fabrication process, in so-called " contact red heat (Kontaktfeuern) ", the semiconductor material of semiconductor layer 1
Material is dissolved to molten metal in the region of contacting breach 6.In the cooling procedure of contact red heat, dissolved semiconductor material
Material recrystallizes on semiconductor layer 1, thus by the metal and is that aluminium is doped herein, as a result, the on the one hand contacting knot
The metal of structure 5 is present in semiconductor layer 1 as dopant, thus forms local doped region 7.But then, now partly lead
Body material also migrates into contacting structure in contacting gap regions.
Contacting structure is made up of aluminium herein, thus 7 corresponding adulterated al of doped region and be therefore p doping doped region.
The doping in the region is higher than the basic doping of the base stage of semiconductor layer 1, therefore doped region 7 is that local p high-concentration dopants area (is also referred to as
For p++)。
Hereinafter, reference picture 2 is described in detail the design of the contacting structure 5：
Fig. 2-4 and Fig. 6 illustrates the part of variant contacting structure with vertical view respectively.Fig. 2 is shown in which basis
The contacting structure 5 of Fig. 1 solar cell.
In addition, the partial enlargement of the partial cross-section increase of contacting structure is shown respectively in Fig. 2-Fig. 4 and Fig. 6
Figure.
Contacting structure 5 as shown in Figure 2 has a bus 8 and multiple fingertips, wherein here it is shown that three fingertips
9。
Each fingertip extends past multiple spaced contacting areas 10 with a distance (being 500 μm herein)：
As shown in partial enlarged drawing, in the contacting breach 6 of insulating barrier 4, fingertip 9 penetrates insulating barrier 4 and therefore existed
This region forms the electrical contact with semiconductor layer 1.Therefore there is contacting face 11 in contacting area 10, in the contacting face
On 11, contacting structure 5 and semiconductor layer 1 are immediately adjacent to each other and form electrical contact.
It is important that fingertip 9 has local cross section increase in contacting area 10 respectively：
As shown in the top view according to Fig. 2, fingertip 9 has parallel to the surface of insulating barrier 4 respectively in contacting area 10
Local widening portion.Therefore, partial cross-section increase be fingertip 9 in the region of contacting face 11 relative in contacting
The cross section increase of fingertip cross section in extension before and after face 11.Here, the cross section is in contacting face area
In domain (region A1) compared to the cross section before and after contacting face (position A2 " and A3 ") be about 1.7 multiple
Increase.It is preferably present the cross section increase according to the multiple in the range of 1.10-3, especially in the range of 1.2-2.Here, these
Referring to outside contact surface has about 300 μm of width in the region of (increase is outer in cross section), the width preferably substantially (100 μm-
500 μm) in the range of.(increase in the region of contacting face in cross section in region), these refer to herein with about 500 μm
Width.Cross section increase is preferably substantially limited to contacting face region.Equally, cross section increase can be in contacting face
Before and after further slightly extend, but the more preferably less than half of contacting face length.Term " length " is related to contact and connect
Logical extension size of the face on principal current direction.
Because those widened sections are designed to the width more than contacting face 11, therefore fingertip 9 is in contacting area 10 and insulation
Layer 4 is overlappingly formed.Especially, fingertip is being overlapped in insulating barrier 4 in the region in contacting face 11 respectively, i.e., herein
In the top view being seen from above, the contacting face 11 be overlapped in the region surround ring of fingertip 9 of the insulating barrier 4 around.Therefore, touch
Refer to 9 covering contacting areas 10 and and then also cover contact surface 11.
When using a solar cell, the electric current in contacting structure 5 flows up in the side of bus 8, and the electric current is for example
It is connected when forming solar module by battery unit connector with adjacent solar cell conductive.
Therefore, in fingertip 9, flowed from right to left according to Fig. 2 electric current.In contacting area, the line resistance of fingertip 9
Rate increases, because the semi-conducting material of the semiconductor layer 1 is added into fingertip in the region.But because cross section increases
And be herein because fingertip in contacting area is widened, therefore the increase of conductor resistance rate is compensated.In addition, fingertip 9 encloses
Do not have or only has the semi-conducting material of low concentration around the marginal zone in contacting area 10, so as to correspondingly be not present or only yet
The slightly increase of line resistance be present.
As a result, the line resistance of contacting structure 5 is come from because the efficiency damage that semi-conducting material adds and locally increases
Mistake is avoided or is at least significantly reduced.
Fig. 3 shows the optional embodiment of replacement of the contacting structure 5' according to second embodiment, and it accordingly has
The alternate design and arrangement of contacting breach and contacting face 11'.Can be in contact according to Fig. 3 contacting structure 5'
The contacting structure 5 replaced in Fig. 1 is connected in the case of breach 6 accordingly adjusts, i.e. contacting structure 5' can also be advantageously
It is used as the back contact engaging structure of the PERC solar cells of two-sided shape.
Trunk 12 is had according to Fig. 3 contacting structure 5' fingertip 9', it is multiple it is micro- refer to 13 and extend from trunk, just as
As being shown in partial enlarged drawing.Micro- finger 13 extends perpendicular to longitudinal principal spread direction of fingertip 9' trunk 12.
Correspondingly, contacting face 11' also has the longitudinal direction of longitudinal extension and the trunk 12 perpendicular to fingertip 9'
Extend size arrangement.Micro- finger 13 is completely covered and is overlapped in contacting face 11'.In addition, insulating barrier surrounds contacting face
11'。
In the contacting structure 5' according to Fig. 3, when solar cell using when in fingertip 9' also have electric current basic
On flowed up in bus 5' side, i.e., in fingertip 9' trunk 12 in the view according to Fig. 3 always from right to left.
In micro- finger, electric current flows perpendicular to trunk 12 and towards the ground of trunk 12.
Therefore, fingertip 9' has partial cross-section increase respectively in contacting face 11', and it is here by 13 Hes of micro- finger
And then it is made up of local widening (on the direction of trunk 12).Here, cross section is increased by a pair of micro- refer to according to about 3 multiple
Greatly.In this embodiment, cross section increase is preferably carried out according to the multiple in the range of 2-5.
In addition, trunk 12 does not cover contacting face 11', therefore add in the no addition of trunk 12 or only low concentration and partly lead
Body material, thus the electric current towards bus 5' in trunk 12 is uninfluenced or only by caused by being added because of semi-conducting material
The minimal effect of line resistance increase.
Fig. 4 shows to be used for contacting structure 5 " another embodiment, the contacting structure can also be similar to that Fig. 1's
View is used for back contact and connects solar cell.The size setting of partial cross-section increase can be similar to according to figure herein
3 embodiment is carried out.
Contacting structure 5 " has the characteristics that solar cell, which does not have, is used for some individually fingertips 9 that are connected to each other "
Electric conductor：
Contacting structure 5 " has multiple fingertips 9 ", and they " prolong along multiple contacting faces 11 with the trunk of finger respectively
Stretch.Contacting face 11 " also like arranging in pairs like that in figure 3, wherein, the contacting face for belonging to a pair (correspondingly also has
Corresponding contacting breach in insulating barrier) in each fingertip 9 " the opposite sides thereof of trunk formed.Partial enlargement shows there is one
To contacting face 11 " fingertip 9 ", " trunk 12 " is oppositely arranged with fingertip 9 for they.Also it is within the scope of the invention that, one
Contacting face is formed respectively as contacting face is coherent, it extends under fingertip trunk in the case thus also.
Contacting structure 5 " also has micro- finger 13'：
Also such as see in enlarged cross sectional views, be respectively equipped with by the side of fingertip 9 " trunk 12 " and micro- refer to 13 ", they
Contacting face 11 is completely covered ".In addition, micro- finger 13' is formed in " taper refers to " shape, way is micro- finger 13' width towards master
Dry 12 " increase.
When using a solar cell, the electric current in micro- finger 13' is in trunk 12, and " side is increased up, because continuously through touching
Point " the input current of connection face 11.In order to avoid or at least reduce because of the power loss brought of electric current increase, micro- finger 13' width
" the corresponding increase towards trunk 12.
When solar cell is in a solar module wiring, fingertip 9 " is mutually conductively connected by exterior part
And/or " it is conductively connected with the fingertip 9 of adjacent solar battery.Therefore (and because lacking bus structure), according to Fig. 4 fingertip
9 " bus is also sometimes referred to as herein.
Figure 5 illustrates another embodiment, here, partial cross-section increase is obtained by partial thickening：
In principle, can be based on the solar battery structure according to Fig. 1 and also based on according to figure according to Fig. 5 embodiment
The contacting structure of 2 top view is formed.According to Fig. 5 view show it is perpendicular to insulating barrier 4 and along fingertip 9 " '
And " the section of ' middle extension is substantially centered in fingertip 9.Thus, the fingertip 9 " ' partial cross-section increase not only pass through herein
Obtained according to Fig. 2 local widening, increased also by according to Fig. 5 local thickness to obtain.In an alternative embodiment,
The partial cross-section increase is only obtained by the partial thickening according to Fig. 5.Herein, thickness is locally such as with multiple 2
Increase.Partial thickening is preferably carried out with the multiple in the range of 1.2-4.
Fig. 6 shows the 5th embodiment, here, fingertip is formed with electric metal conduction structure in parallel：
Contacting structure as shown in Fig. 6 partial view can also be used for contacting according to Fig. 1 PERC too
Positive energy battery.
Herein, multiple fingertips 9 " " are also from a bus 8 " ' stretch out.Different from previous embodiment, it is so-called that fingertip 9 " " has
Pair refer to：Shown in partial enlarged drawing as shown on the right, the trunk 12 of the fingertip in contacting area is not covered " ' be centrally located.
Trunk 12 " ' side by, refer to 14a, 14b provided with multiple pairs parallel to trunk, these pairs refer in the region in contacting area 10
" ' the interval, i.e. be not present and be conductively connected in this region with trunk 12.Only between contacting area, pair refers to 14a, 14b and master
Dry 12 " ' connected by metal bridge piece conductive phase.Exemplarily two such bridge is indicated in partial enlarged drawing with reference 15
Piece.
Thus advantages below is obtained, although semi-conducting material is in contacting area in contacting structure as manufacture
10 diffusion access points connect areas 10 region in metal in, but because with trunk 12 " ' have space interval without reach trunk.
Along trunk 12 " ' to bus 8 " ' electric current it is therefore uninfluenced or only slightly added and influenceed by semi-conducting material.
The width that pair refers to is about the 75% of trunk width herein.Here, the width of trunk is about 200 μm.
Claims (15)
1. a kind of photovoltaic solar cell, it has the insulating barrier (4) of at least one semiconductor layer (1), at least one electric insulation
With the contacting structure of at least one metal (5,5', 5 "),
Wherein, the insulating barrier is arranged between the semiconductor layer and the contacting structure, and the insulating barrier (4) is with multiple
Spaced contacting breach (6), (5,5', 5 ") are in the contacting indentation, there and the semiconductor for the contacting structure
Floor (1) forms electrical contact in contacting area (10), and
Wherein, in the semiconductor layer (1) at least the contacting area respectively by the semiconductor layer doped metal and shape
Into doped region, the contacting structure (5,5', 5 ") are at least partly made up of the metal,
It is characterized in that
The contacting structure (5,5', 5 ") have multiple fingertips, the fingertip (9,9', 9 ", 9 " ') each extend over mutual
Every multiple contacting areas on and/or extend along spaced multiple contacting areas, wherein, these fingertips (9,9',
9 ", 9 " ') increase in the contacting area with partial cross-section and/or these fingertips have in the contacting area it is electric
The gas metal conduction structure for not covering the contacting area in parallel.
2. solar cell according to claim 1, it is characterized in that, these fingertips (9,9', 9 ", 9 " ') in the contact
Connecting area has parallel to insulating barrier (4) surface and perpendicular to the widening portion of the fingertip longitudinal extension.
3. solar cell according to claim 2, it is characterized in that, these fingertips (9,9', 9 ", 9 " ') in the contact
Connect area to be formed in the way of the insulating barrier (4) is covered, especially these fingertips (9,9', 9 ", 9' ") are around the contact
Connect and the insulating barrier (4) is covered in the region in area.
4. according to the solar cell of one of preceding claims, it is characterized in that, these contacting breach are arranged in pairs,
This, belongs to the opposite sides thereof that a pair of contacting breach is arranged in the trunk of the fingertip.
5. according to the solar cell of one of preceding claims, it is characterized in that, these fingertips (9,9', 9 ", 9 " ') touched described
Point, which connects area, has partial thickening.
6. according to the solar cell of one of preceding claims, it is characterized in that, (5,5', 5 ") have extremely the contacting structure
Few multiple fingertips, wherein, these fingertips (9,9', 9 ", 9 " ') preferably be arranged in parallel.
7. according to the solar cell of one of preceding claims, it is characterized in that, (5,5', 5 ") include the contacting structure
Multiple fingertips and at least one bus (8,8', 8 "), wherein, these fingertips (9,9', 9 ", 9 " ') are engaged with material and conduction
Mode is connected with the bus, be preferably such that the fingertip (9,9', 9 ", 9 " ') extend in parallel and the bus (8,8', 8 ") perpendicular to
The fingertip extends.
8. according to the solar cell of one of preceding claims, it is characterized in that, the contacting structure includes multiple fingertips, its
In, these fingertips (9 ") connect without metallic conduction each other.
9. according to the solar cell of one of preceding claims, it is characterized in that, at least one of contacting face, it is preferably
Whole contacting faces has longitudinal extension and the longitudinal extension perpendicular to fingertip is arranged, especially causes described touch
Refer to (9,9', 9 ", 9 " ') on the contacting face with longitudinal extension have along the longitudinal extension towards this
Fingertip (9,9', 9 ", 9 " ') increase cross section, it is particularly preferred that increase width.
10. according to the solar cell of one of preceding claims, it is characterized in that, electrically metal conduction structure in parallel is with part
Parallel secondary finger version form, the pair refers to the trunk interval with the fingertip in the region in contacting area, especially causes
The pair refers to the covering contacting area and the trunk does not cover the contacting area.
11. according to the solar cell of one of preceding claims, it is characterized in that, these fingertips (9,9', 9 ", 9 " ') in contact
Connect the semi-conducting material that area (10) include the semiconductor layer (1).
12. according to the solar cell of one of preceding claims, it is characterized in that, the solar cell is as follows with two-sided
The form of solar cell is formed：Electromagnetic radiation is at least partly allowed to form the table with passing through at the back side of solar cell
(with back contact engaging structure, (5,5', 5 ") forms form and are arranged on this 5,5', 5 ") for face, especially the contacting structure
On the back side of solar cell.
13. according to the solar cell of one of preceding claims, it is characterized in that, the contacting structure (5,5', 5 ") by with
In the p doped regions of the contacting semiconductor layer (1).
14. according to the solar cell of one of preceding claims, it is characterized in that, contacting structure (5,5', the 5 ") conducts
Back contact engaging structure (5,5', 5 ") form and are arranged on the back side of the solar cell, and the solar cell
Contacts connectors area of the back side in the semiconductor layer (1) is formed with high local concentrations doped region.
15. according to the solar cell of one of preceding claims, it is characterized in that, the fingertip has in all contacting areas
Partial cross-section increases and/or parallel conducting structure, and/or the solar cell is formed as PERC solar cells.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102015104236.3 | 2015-03-20 | ||
| DE102015104236.3A DE102015104236B4 (en) | 2015-03-20 | 2015-03-20 | Photovoltaic solar cell |
| PCT/EP2016/056044 WO2016150878A1 (en) | 2015-03-20 | 2016-03-18 | Photovoltaic solar cell |
Publications (2)
| Publication Number | Publication Date |
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| CN107408584A true CN107408584A (en) | 2017-11-28 |
| CN107408584B CN107408584B (en) | 2021-04-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201680014291.7A Active CN107408584B (en) | 2015-03-20 | 2016-03-18 | Photovoltaic solar cell |
Country Status (4)
| Country | Link |
|---|---|
| CN (1) | CN107408584B (en) |
| DE (1) | DE102015104236B4 (en) |
| HR (1) | HRP20171417B8 (en) |
| WO (1) | WO2016150878A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108054221A (en) * | 2017-12-18 | 2018-05-18 | 湖南红太阳光电科技有限公司 | The back side grid line structure of two-sided PERC batteries, two-sided PERC batteries and preparation method thereof |
| CN108735829A (en) * | 2018-07-12 | 2018-11-02 | 浙江爱旭太阳能科技有限公司 | The p-type PERC double-sided solar batteries and preparation method thereof of back side photoelectric conversion efficiency can be promoted |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107425080B (en) * | 2017-03-03 | 2019-11-15 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar battery and its component, system and preparation method |
| CN106952972B (en) * | 2017-03-03 | 2019-04-19 | 广东爱旭科技股份有限公司 | P-type PERC double-sided solar battery and its component, system and preparation method |
| CN106876496B (en) * | 2017-03-03 | 2019-07-05 | 广东爱旭科技股份有限公司 | P-type PERC double-sided solar battery and its component, system and preparation method |
| CN106887475B (en) * | 2017-03-03 | 2019-07-05 | 广东爱旭科技股份有限公司 | P-type PERC double-sided solar battery and its component, system and preparation method |
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| CN1726598A (en) * | 2002-10-23 | 2006-01-25 | 金色力量有限公司 | Formation of contacts on semiconductor substrates |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2016150878A1 (en) | 2016-09-29 |
| CN107408584B (en) | 2021-04-09 |
| HRP20171417B1 (en) | 2021-04-02 |
| DE102015104236A1 (en) | 2016-09-22 |
| HRP20171417B8 (en) | 2021-12-24 |
| HRP20171417A2 (en) | 2018-03-09 |
| DE102015104236B4 (en) | 2021-11-18 |
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