CN108680879A - Nano-structure magnetic measurement method - Google Patents
Nano-structure magnetic measurement method Download PDFInfo
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- CN108680879A CN108680879A CN201810429273.6A CN201810429273A CN108680879A CN 108680879 A CN108680879 A CN 108680879A CN 201810429273 A CN201810429273 A CN 201810429273A CN 108680879 A CN108680879 A CN 108680879A
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract
The invention relates to the technical field of physical measurement, in particular to a method for measuring the magnetism of a nanostructure, wherein a measuring device comprises a laser, a beam splitter, a convex lens I, a photoelectric detector, a phase-locked amplifier, a prism polarizer, a convex lens II, a polarization-maintaining optical fiber I, an electro-optic modulator, a polarization-maintaining optical fiber II, a convex lens III, a wave plate I, a lens table, an atomic force microscope, a probe, a sample, a magnet, a sample table, a signal generator, an oscilloscope, a wave plate II, a convex lens IV and a plane mirror, wherein the magnetization information on the surface of the sample is obtained by adopting a method of interference of two orthogonal polarization components of the same light, the two polarization components share one light path, the separation and the reunion of the light beams are avoided, the two light beams can be relatively easily ensured to be transmitted in the same light path, optical elements in the light path are reduced, so that the signal is less influenced by the movement, the signal-to-noise ratio is improved, and the longitudinal component, the transverse component and the polar component of the Kerr effect are measured by adopting the obliquely incident light beam.
Description
Technical field
It is especially a kind of single come research material surface using beam interference method the present invention relates to physical measurement techniques field
A kind of nanostructure strip magnetic measurement method of a nanostructure magneto-optical kerr signal.
Background technology
Kerr magnetooptical effect measuring device is a kind of important means in material surface magnetism research, and operation principle is base
Kerr magnetooptical effect caused by interaction, can not only carry out monoatomic layer thickness material between Yu Youguang and magnetized medium
The magnetic detection of material, and can realize non-contact measurement, in the magnetic order, magnetic anisotropy, layer coupling of magnetic ultrathin film
There is important application in research with the transformation behavior of magnetic ultrathin film etc..Kerr magnetooptical effect measuring device is mainly
Light intensity variation caused by by detecting polarization state variation of a branch of linearly polarized light after material surface reflection carries out sample surfaces
Magnetization observation.Prior art defect one：Traditional microscopical spatial resolutions of focusing Ke Er are determined by optical diffraction limit
Fixed, the effect of imaging is highly prone to optical element limitation, therefore is unable to get the magnetization behavioral characteristics of nanoscale.It is existing
Technological deficiency two：Certain by measuring in the method for magnetization information of interference of the two-beam in sample surfaces to obtain sample,
The light path of two-beam is separately controlled, and needs to reconsolidate before detection, it is therefore desirable to more optical element,
Therefore the noise of the signal obtained is relatively low, prior art defect three：The kerr rotation of the interferometry sample of the prior art
In device, pole can only be measured to Kerr effect, a kind of nanostructure strip magnetic measurement method can solve the problems, such as.
Invention content
To solve the above-mentioned problems, the present invention is obtained using the method for two orthogonal polarization components interference with light beam
Two orthogonal polarization components of the magnetization information of sample surfaces, light share a light path, reduce the optical element in light path, carry
High signal-to-noise ratio, the present invention by using the light beam of oblique incidence can measure Kerr effect longitudinally, laterally with pole to three points
Amount；In addition, the present invention uses the atomic force microscope probe with through-hole, sample surfaces nano-scale structures can be obtained
Magnetize behavioral characteristics.
The technical solution adopted in the present invention is：
Measuring device includes mainly laser, beam splitter, convex lens I, photodetector, lock-in amplifier, prism polarization
Device, convex lens II, polarization maintaining optical fibre I, electrooptic modulator, polarization maintaining optical fibre II, convex lens III, wave plate I, lens platform, atomic force are aobvious
Micro mirror, probe, sample, magnet, sample stage, signal generator, oscillograph, wave plate II, convex lens IV, plane mirror, laser
Wavelength is adjustable to 800 nanometer ranges at 400 nanometers, and xyz is rectangular coordinate system in space, x/y plane is horizontal plane, zx planes and water
Plane is vertical, and atomic force microscope is located at below lens platform, and probe is located at below atomic force microscope, and the probe is atom
Force microscope probe and be truncated conical shape, the upper bottom surface of the round platform is 3 microns a diameter of, a diameter of 1.5 microns of bottom surface, institute
State round platform axis direction and horizontal plane, sample, magnet and sample stage are sequentially located at the underface of probe, in the probe
With through-hole I and through-hole II, the axis of the through-hole I, the axis of through-hole II and probe round platform are respectively positioned in zx planes, described
The axis of through-hole I and through-hole II are located at the both sides of probe round platform axis and with the probe round platform axis at 45 degree
Angle, photodetector and lock-in amplifier cable connection, signal generator, oscillograph distinguish cable connection sample stage, polarization-maintaining light
Fine I has slow axis and fast axle, and the axis of homology of prism polarizers is parallel with the slow axis of polarization maintaining optical fibre I, the slow axis position of polarization maintaining optical fibre I
Between the horizontal magnetic axis and transverse electric axis of electrooptic modulator on the angular bisector of angle, horizontal magnetic axis and the polarization-maintaining light of electrooptic modulator
The slow axis of fine II is parallel, and the diameter of through-hole I and through-hole II in the probe are 200 nanometers, the polarization maintaining optical fibre I length
It it is 2 meters, the polarization maintaining optical fibre II length is 9 meters, and wave plate I is half-wave plate, and wave plate II is quarter wave plate.
The light that laser is sent out is successively after beam splitter, prism polarizers, convex lens II, polarization maintaining optical fibre I, into electricity
Optical modulator, it is to be polarized outside in-plane polarization knead dough, and each divide that light forms two orthogonal polarized components in electrooptic modulator
Amount adds phase (t)=φ0The phase time difference of cos (ω t), two light components are τ, and light beam comes out from electrooptic modulator
Enter polarization maintaining optical fibre II afterwards, two orthogonal polarized components of light are transmitted along the fast axle and slow axis of polarization maintaining optical fibre II respectively, light from
After opening polarization maintaining optical fibre II, passes sequentially through convex lens III, wave plate I, lens platform, atomic force microscope, through-hole I and reach sample table
Face, and reflected for the first time, first reflection light passes through through-hole II, atomic force microscope, lens platform, wave plate II, convex lens successively
Mirror IV reaches plane mirror, and second is reflected, and second of reflected light passes through convex lens IV, wave plate II, lens platform, original successively
Sub- force microscope, through-hole II reach sample surfaces, and third time is reflected by sample surfaces, and third time reflected light is successively by logical
Hole I, atomic force microscope, lens platform, wave plate I, convex lens III, polarization maintaining optical fibre II, electrooptic modulator, polarization maintaining optical fibre I, convex lens
Mirror II, prism polarizers, then after being deflected by beam splitter enter photodetector by convex lens I, and the two of third time reflected light
A polarized component interferes at photodetector, respectively along two of the light of the slow axis and fast axle of polarization maintaining optical fibre II transmission
Orthogonal polarization components are expressed as from corresponding Jones matrix after polarization maintaining optical fibre II outputsWith
After wave plate I, the corresponding Jones matrix of two orthogonal polarization components of the light is changed intoWithWherein For phase angle, definitionTo indicate light beam by sample surfaces
The Jones matrix of electrooptic modulator whole process, two cross-polarizations point of the light obtained in photodetector are returned to after two secondary reflections
The phase meter of amount is shown as
Component of the phase difference in x, y, z direction is respectively αx、αy、αz, Fourier point is carried out to the photoelectric current obtained in photodetector
Analysis, lock-in amplifier obtain an order harmonic component of photoelectric current：And second order
Harmonic component：
Consider symmetry, αKIt is reduced toWherein ω is the angle of the time dependent phase (t) of electrooptic modulator
Frequency, IincBe laser transmitting light light intensity, γ be light beam twice pass through following optical element beam splitter, prism polarizers,
Convex lens II, polarization maintaining optical fibre I, electrooptic modulator, polarization maintaining optical fibre II, convex lens III, convex lens IV, and reflected by sample surfaces
The remaining proportion of light intensity, J after twice1And J2It is single order respectively and second order is Bessel equation, αKIt is the line of sample magnetization component
Property equation, the sample magnetization component m in x, y, z directionx、my、mzTo αKContribution depend on Sample
Optical element etc. in the reflectance factors of product, light path.
Pole corresponds to the component in the magnetized directions z to Kerr effect, and longitudinal Kerr effect corresponds to point in the magnetized directions y
Amount, transverse Kerr effect correspond to the component in the magnetized directions x, since sample magnetization component is under different Crystals in Symmetry operations
Transformation it is different, it should select suitable P1And P2And the optical element in light path so that pole to or vertical or horizontal magneto-optic
The contribution of Kerr effect accounts for major part.
A kind of nanostructure strip magnetic measurement method includes the method for measuring longitudinal Kerr effect, measures pole to Ke Er effects
Induction method measures transverse Kerr effect method.
A kind of the step of nanostructure strip magnetic measurement method, is distinguished as follows：
The method for measuring longitudinal Kerr effect：
For the fast axle of one, adjustment wave plates I with the directions y at 22.5 degree, the fast axle of adjustment wave plate II is consistent with the directions y so that
After wave plate I, the corresponding Jones matrix of two orthogonal polarization components of incident light is
Two, make probe approach sample surfaces by atomic force microscope, and probe is enabled to be scanned in two micron ranges, scanning
2 nm/sec of speed determines sample edge position by the sample surface profiles obtained in scanning；
Three, probes bounce back 50 nanometers of distance upwards, and close the scanning feedback of atomic force microscope；
Four, adjust the position of laser so that the laser beam that laser is sent out enters the through-hole I of probe, and laser beam is in sample
The through-hole II, wave plate II, convex lens IV that the first reflection light formed after product surface reflection passes sequentially through probe reach plane mirror,
And second of reflected light is reflected to form by plane mirror；
Five, adjust convex lens IV and mirror position so that second of reflected light is mapped to sample by the through-hole II of probe
Surface, and form third time reflected light；
Six, third times reflected lights pass through through-hole I, atomic force microscope, lens platform, wave plate I, the convex lens of probe successively
It is deflected by beam splitter after III, polarization maintaining optical fibre II, electrooptic modulator, polarization maintaining optical fibre I, convex lens II, prism polarizers, through excess convexity
Lens I enters photodetector, and two polarized components of light beam interfere at photodetector；
Seven, photodetector output signals obtain differential phase after carrying out Fourier analysis to lock-in amplifier, in this condition
Under, one order harmonic component of light intensityLongitudinal kerr rotation
rpAnd rsThe respectively reflectivity of P polarization light and S-polarization light in sample surfaces；
Eight, are by formulaKerr rotation is calculated.
Pole is measured to Kerr effect method：
For the fast axle of one, adjustment wave plates I with the directions y at 22.5 degree, the fast axle of adjustment wave plate II is consistent with the directions y so that
After wave plate I, the corresponding Jones matrix of two orthogonal polarization components of incident light is
Two, make probe approach sample surfaces by atomic force microscope, and probe is enabled to be scanned in two micron ranges, scanning
2 nm/sec of speed determines sample edge position by the sample surface profiles obtained in scanning；
Three, probes bounce back 50 nanometers of distance upwards, and close the scanning feedback of atomic force microscope；
Four, adjust the position of laser so that the laser beam that laser is sent out enters the through-hole I of probe, and laser beam is in sample
The through-hole II, wave plate II, convex lens IV that the first reflection light formed after product surface reflection passes sequentially through probe reach plane mirror,
And second of reflected light is reflected to form by plane mirror；
Five, adjust convex lens IV and mirror position so that second of reflected light is mapped to sample by the through-hole II of probe
Surface, and form third time reflected light；
Six, third times reflected lights pass through through-hole I, atomic force microscope, lens platform, wave plate I, the convex lens of probe successively
It is deflected by beam splitter after III, polarization maintaining optical fibre II, electrooptic modulator, polarization maintaining optical fibre I, convex lens II, prism polarizers, through excess convexity
Lens I enters photodetector, and two polarized components of light beam interfere at photodetector；
Seven, photodetector output signals obtain differential phase after carrying out Fourier analysis to lock-in amplifier, in this condition
Under, one order harmonic component of light intensityPole is to kerr rotation
rpAnd rsRespectively P polarization light and S-polarization light sample surfaces reflectivity,
Eight, are by formulaKerr rotation is calculated.
Measure transverse Kerr effect method：
One, removes wave plate I, and the fast axle of adjustment wave plate II is with the directions y at 45 degree so that after wave plate I, incident light
The corresponding Jones matrix of two orthogonal polarization components beWith
Two, make probe approach sample surfaces by atomic force microscope, and probe is enabled to be scanned in two micron ranges, scanning
2 nm/sec of speed determines sample edge position by the sample surface profiles obtained in scanning；
Three, probes bounce back 50 nanometers of distance upwards, and close the scanning feedback of atomic force microscope；
Four, adjust the position of laser so that the laser beam that laser is sent out enters the through-hole I of probe, and laser beam is in sample
The through-hole II, wave plate II, convex lens IV that the first reflection light formed after product surface reflection passes sequentially through probe reach plane mirror,
And second of reflected light is reflected to form by plane mirror；
Five, adjust convex lens IV and mirror position so that second of reflected light is mapped to sample by the through-hole II of probe
Surface, and form third time reflected light；
Six, third times reflected lights pass through through-hole I, atomic force microscope, lens platform, wave plate I, the convex lens of probe successively
It is deflected by beam splitter after III, polarization maintaining optical fibre II, electrooptic modulator, polarization maintaining optical fibre I, convex lens II, prism polarizers, through excess convexity
Lens I enters photodetector, and two polarized components of light beam interfere at photodetector；
Seven, photodetector output signals obtain differential phase after carrying out Fourier analysis to lock-in amplifier, at this
Under the conditions of, one order harmonic component of light intensityLateral kerr rotation
rpAnd rsThe respectively reflectivity of P polarization light and S-polarization light in sample surfaces；
Eight, are by formulaKerr rotation is calculated.
The beneficial effects of the invention are as follows：
In the kerr rotation of the interferometry sample of the prior art, the interferometric loop of light path has certain area, the present invention
Interferometry is carried out instead of two independent light beams by two orthogonal polarized components of the same light beam, advantage is：Pass through
Avoid light beam separation and collect again relatively easy where to ensure two light beams with same paths so that signal compared with
Less in by sample and interferometric loop optical element moving influence.
Description of the drawings
It is further illustrated with reference to the figure of the present invention：
Fig. 1 is schematic diagram of the present invention.
In figure, 1. lasers, 2. beam splitters, 3. convex lens I, 4. photodetectors, 5. lock-in amplifiers, 6. prisms are inclined
Shake device, 7. convex lens II, 8. polarization maintaining optical fibre I, 9. electrooptic modulators, 10. polarization maintaining optical fibre II, 11. convex lens III, 12. wave plates
I, 13. lens platforms, 14. atomic force microscope, 15. probes, 16. samples, 17. magnet, 18. sample stages, 19. signal generators,
20. oscillograph, 21. wave plate II, 22. convex lens IV, 23. plane mirrors.
Specific implementation mode
If Fig. 1 is schematic diagram of the present invention, the lower left corner has xyz three-dimensional marks, and xyz is rectangular coordinate system in space, xy is flat
Face is horizontal plane, zx planes and horizontal plane, and measuring device includes mainly laser 1, beam splitter 2, convex lens I3, photoelectricity
Detector 4, lock-in amplifier 5, prism polarizers 6, convex lens II7, polarization maintaining optical fibre I8, electrooptic modulator 9, polarization maintaining optical fibre
II10, convex lens III11, wave plate I12, lens platform 13, atomic force microscope 14, probe 15, sample 16, magnet 17, sample stage
18, signal generator 19, oscillograph 20, wave plate II21, convex lens IV22, plane mirror 23, the wavelength of laser 1 is at 400 nanometers
Adjustable to 800 nanometer ranges, atomic force microscope 14 is located at 13 lower section of lens platform, and probe 15 is located under atomic force microscope 14
Side, the probe 15 be atomic force microscope probe and is truncated conical shape, and the upper bottom surface of the round platform is 3 microns a diameter of, goes to the bottom
A diameter of 1.5 microns of face, the round platform axis direction and horizontal plane, sample 16, magnet 17 and sample stage 18 are sequentially located at
The underface of probe 15 has through-hole I and through-hole II, the through-hole I, the axis of through-hole II and probe 15 in the probe 15
The axis of round platform is respectively positioned in zx planes, and the axis of the through-hole I and through-hole II are located at the two of 15 round platform axis of probe
Side and with 15 round platform axis of the probe at 45 degree of angles, photodetector 4 and 5 cable connection of lock-in amplifier, signal hair
Raw device 19, oscillograph 20 distinguish cable connection sample stage 18, and polarization maintaining optical fibre I8 has slow axis and a fast axle, prism polarizers 6 it is saturating
Penetrate that axis is parallel with the slow axis of polarization maintaining optical fibre I8, the slow axis of polarization maintaining optical fibre I8 be located at electrooptic modulator 9 horizontal magnetic axis and transverse electric axis it
Between angle angular bisector on, the horizontal magnetic axis of electrooptic modulator 9 is parallel with the slow axis of polarization maintaining optical fibre II10, in the probe 15
Through-hole I and the diameter of through-hole II be 200 nanometers, the polarization maintaining optical fibre I8 length is 2 meters, the polarization maintaining optical fibre II10 long
Degree is 9 meters, and wave plate I12 is half-wave plate, and wave plate II21 is quarter wave plate.
The light that laser 1 is sent out successively after beam splitter 2, prism polarizers 6, convex lens II7, polarization maintaining optical fibre I8, into
Entering electrooptic modulator 9, light forms two orthogonal polarized components to be polarized outside in-plane polarization knead dough in electrooptic modulator 9, and
Each component adds phase (t)=φ0Cos (ω t), the phase time differences of two light components are τ, and light beam is from electrooptic modulator
9 out after enter polarization maintaining optical fibre II10, two orthogonal polarized components of light are respectively along the fast axle and slow axis of polarization maintaining optical fibre II10
Transmission, after light leaves polarization maintaining optical fibre II10, passes sequentially through convex lens III11, wave plate I12, lens platform 13, atomic force microscope
14, through-hole I reaches 16 surface of sample, and is reflected for the first time, and first reflection light passes through through-hole II, atomic force microscopy successively
Mirror 14, lens platform 13, wave plate II21, convex lens IV22 reach plane mirror 23, and second is reflected, second of reflected light according to
It is secondary to reach sample surfaces, and third by convex lens IV22, wave plate II21, lens platform 13, atomic force microscope 14, through-hole II
It is secondary by 16 surface reflection of sample, third time reflected light passes through through-hole I, atomic force microscope 14, lens platform 13, wave plate successively
I12, convex lens III11, polarization maintaining optical fibre II10, electrooptic modulator 9, polarization maintaining optical fibre I8, convex lens II7, prism polarizers 6, then
After being deflected by beam splitter 2, enter photodetector 4 by convex lens I3, two polarized components of third time reflected light are in photoelectricity
It is interfered at detector 4, two orthogonal polarization components of the light transmitted respectively along the slow axis and fast axle of polarization maintaining optical fibre II10,
It is expressed as from corresponding Jones matrix after polarization maintaining optical fibre II10 outputsWithPassing through wave plate I12
Afterwards, the corresponding Jones matrix of two orthogonal polarization components of the light is changed intoWithWherein For phase angle, definitionTo indicate that light beam returns after two secondary reflections by sample surfaces
To the Jones matrix of the whole process of electrooptic modulator 9, the phase of two orthogonal polarization components of the light obtained in photodetector 4
Potential difference is expressed as
Component of the phase difference in x, y, z direction is respectively αx、αy、αz, Fourier point is carried out to the photoelectric current obtained in photodetector 4
Analysis, lock-in amplifier 5 obtain an order harmonic component of photoelectric current：It is humorous with second order
Wave component：
Consider symmetry, αKIt is reduced toWherein ω is the time dependent phase (t) of electrooptic modulator 9
Angular frequency, IincIt is the light intensity of the light of laser transmitting, γ is that light beam is polarized by following optical element beam splitter 2, prism twice
Device 6, convex lens II7, polarization maintaining optical fibre I8, electrooptic modulator 9, polarization maintaining optical fibre II10, convex lens III11, convex lens IV22, and
By 16 surface reflection of sample twice after light intensity remaining proportion, J1And J2It is single order respectively and second order is Bessel equation, αKIt is sample
The linear equation of product magnetization component, the sample magnetization component m in x, y, z directionx、my、mzTo αKContribution depend onOptical element etc. in the reflectance factor of sample, light path.
Pole corresponds to the component in the magnetized directions z to Kerr effect, and longitudinal Kerr effect corresponds to point in the magnetized directions y
Amount, transverse Kerr effect correspond to the component in the magnetized directions x, since sample magnetization component is under different Crystals in Symmetry operations
Transformation it is different, it should select suitable P1And P2And the optical element in light path so that pole to or vertical or horizontal magneto-optic
The contribution of Kerr effect accounts for major part.
A kind of nanostructure strip magnetic measurement method includes the method for measuring longitudinal Kerr effect, measures pole to Ke Er effects
Induction method measures transverse Kerr effect method.
A kind of the step of nanostructure strip magnetic measurement method, is as follows：
The method for measuring longitudinal Kerr effect：
For the fast axle of one, adjustment wave plates I12 with the directions y at 22.5 degree, the fast axle of adjustment wave plate II21 is consistent with the directions y so that
After wave plate I12, the corresponding Jones matrix of two orthogonal polarization components of incident light is
Two, make probe 15 approach 16 surface of sample by atomic force microscope 14, enable probe 15 in two micron ranges
Scanning, 2 nm/sec of sweep speed determine sample edge position by the sample surface profiles obtained in scanning；
Three, probes, 15 upward 50 nanometers of distance of retraction, and close the scanning feedback of atomic force microscope 14；
Four, adjust the position of laser 1 so that the laser beam that laser 1 is sent out enters the through-hole I of probe 15, laser beam
The first reflection light formed after 16 surface reflection of sample passes sequentially through the through-hole II, wave plate II21, convex lens of probe 15
IV22 reaches plane mirror 23, and reflects to form second of reflected light by plane mirror 23；
Five, adjust convex lens IV22 and 23 position of plane mirror so that second of reflected light is penetrated by the through-hole II of probe 15
To 16 surface of sample, and form third time reflected light；
Six, third times reflected lights pass through through-hole I, atomic force microscope 14, lens platform 13, the wave plate of probe 15 successively
After I12, convex lens III11, polarization maintaining optical fibre II10, electrooptic modulator 9, polarization maintaining optical fibre I8, convex lens II7, prism polarizers 6
It is deflected by beam splitter 2, enters photodetector 4 by convex lens I3, two polarized components of light beam are at photodetector 4
It interferes；
Seven, photodetectors 4 output signal to after lock-in amplifier 5 carries out Fourier analysis and obtain differential phase, in this condition
Under, one order harmonic component of light intensityLongitudinal kerr rotation
rpAnd rsThe respectively reflectivity of P polarization light and S-polarization light in sample surfaces；
Eight, are by formulaKerr rotation is calculated.
Pole is measured to Kerr effect method：
For the fast axle of one, adjustment wave plates I12 with the directions y at 22.5 degree, the fast axle of adjustment wave plate II21 is consistent with the directions y, makes
After wave plate I12, the corresponding Jones matrix of two orthogonal polarization components of incident light is
Two, make probe 15 approach 16 surface of sample by atomic force microscope 14, enable probe 15 in two micron ranges
Scanning, 2 nm/sec of sweep speed determine sample edge position by the sample surface profiles obtained in scanning；
Three, probes, 15 upward 50 nanometers of distance of retraction, and close the scanning feedback of atomic force microscope 14；
Four, adjust the position of laser 1 so that the laser beam that laser 1 is sent out enters the through-hole I of probe 15, laser beam
The first reflection light formed after 16 surface reflection of sample passes sequentially through the through-hole II, wave plate II21, convex lens of probe 15
IV22 reaches plane mirror 23, and reflects to form second of reflected light by plane mirror 23；
Five, adjust convex lens IV22 and 23 position of plane mirror so that second of reflected light is penetrated by the through-hole II of probe 15
To 16 surface of sample, and form third time reflected light；
Six, third times reflected lights pass through through-hole I, atomic force microscope 14, lens platform 13, the wave plate of probe 15 successively
After I12, convex lens III11, polarization maintaining optical fibre II10, electrooptic modulator 9, polarization maintaining optical fibre I8, convex lens II7, prism polarizers 6
It is deflected by beam splitter 2, enters photodetector 4 by convex lens I3, two polarized components of light beam are at photodetector 4
It interferes；
Seven, photodetectors 4 output signal to after lock-in amplifier 5 carries out Fourier analysis and obtain differential phase, at this
Under part, one order harmonic component of light intensityPole is to kerr rotation
rpAnd rsRespectively p-polarization light and s polarised lights sample surfaces reflectivity,
Eight, are by formulaKerr rotation is calculated.
Measure transverse Kerr effect method：
One, removes wave plate I12, and the fast axle of adjustment wave plate II21 is with the directions y at 45 degree so that after wave plate I12,
The corresponding Jones matrix of two orthogonal polarization components of incident light isWith
Two, make probe 15 approach 16 surface of sample by atomic force microscope 14, enable probe 15 in two micron ranges
Scanning, 2 nm/sec of sweep speed determine sample edge position by the sample surface profiles obtained in scanning；
Three, probes, 15 upward 50 nanometers of distance of retraction, and close the scanning feedback of atomic force microscope 14；
Four, adjust the position of laser 1 so that the laser beam that laser 1 is sent out enters the through-hole I of probe 15, laser beam
The first reflection light formed after 16 surface reflection of sample passes sequentially through the through-hole II, wave plate II21, convex lens of probe 15
IV22 reaches plane mirror 23, and reflects to form second of reflected light by plane mirror 23；
Five, adjust convex lens IV22 and 23 position of plane mirror so that second of reflected light is penetrated by the through-hole II of probe 15
To 16 surface of sample, and form third time reflected light；
Six, third times reflected lights pass through through-hole I, atomic force microscope 14, lens platform 13, the wave plate of probe 15 successively
After I12, convex lens III11, polarization maintaining optical fibre II10, electrooptic modulator 9, polarization maintaining optical fibre I8, convex lens II7, prism polarizers 6
It is deflected by beam splitter 2, enters photodetector 4 by convex lens I3, two polarized components of light beam are at photodetector 4
It interferes；
Seven, photodetectors 4 output signal to after lock-in amplifier 5 carries out Fourier analysis and obtain differential phase, at this
Under the conditions of a, one order harmonic component of light intensityLateral kerr rotation
rpAnd rsThe respectively reflectivity of p-polarization light and s polarised lights in sample surfaces；
Eight, are by formulaKerr rotation is calculated.
The present invention uses the atomic force microscope probe with through-hole, can obtain the magnetic of sample surfaces nano-scale structures
Change information, secondly, the present invention obtains the magnetic of sample surfaces using the method that two orthogonal polarization components with light beam are interfered
Change information, two polarized light components share a light path, avoid light beam separation and collect again, can relatively easy where protect
Two light beams are demonstrate,proved with same paths, and reduce the optical element in light path so that signal less by sample and is done
The moving influence for relating to optical element in loop, improves signal-to-noise ratio, in addition, by using the light beam of oblique incidence, can realize
In the case of making larger change to light path in device, measure Kerr effect longitudinally, laterally with pole to three components.
Claims (1)
1. a kind of nanostructure strip magnetic measurement method, measuring device includes mainly laser, beam splitter, convex lens I, photodetection
Device, lock-in amplifier, prism polarizers, convex lens II, polarization maintaining optical fibre I, electrooptic modulator, polarization maintaining optical fibre II, convex lens III,
Wave plate I, lens platform, atomic force microscope, probe, sample, magnet, sample stage, signal generator, oscillograph, wave plate II, convex lens
The wavelength of mirror IV, plane mirror, laser is adjustable to 800 nanometer ranges at 400 nanometers, and xyz is rectangular coordinate system in space, x/y plane
For horizontal plane, zx planes and horizontal plane, atomic force microscope are located at below lens platform, and probe is located under atomic force microscope
Side, the probe is atomic force microscope probe and is truncated conical shape, and the upper bottom surface of the round platform is 3 microns a diameter of, bottom surface
A diameter of 1.5 microns, the round platform axis direction and horizontal plane, sample, magnet and sample stage are being sequentially located at probe just
Lower section there is through-hole I and through-hole II, the axis of the through-hole I, the axis of through-hole II and probe round platform to be respectively positioned in the probe
In zx planes, the axis of the through-hole I and through-hole II be located at the both sides of probe round platform axis and with the probe round platform
Axis distinguishes cable connection sample at 45 degree of angles, photodetector and lock-in amplifier cable connection, signal generator, oscillograph
Platform, polarization maintaining optical fibre I have slow axis and fast axle, and the axis of homology of prism polarizers is parallel with the slow axis of polarization maintaining optical fibre I, polarization maintaining optical fibre I
Slow axis be located between the horizontal magnetic axis and transverse electric axis of electrooptic modulator on the angular bisector of angle, the horizontal magnetic axis of electrooptic modulator with
The slow axis of polarization maintaining optical fibre II is parallel, and the diameter of through-hole I and through-hole II in the probe are 200 nanometers, the polarization maintaining optical fibre I
Length is 2 meters, and the polarization maintaining optical fibre II length is 9 meters, and wave plate I is half-wave plate, and wave plate II is quarter wave plate, what laser was sent out
Light is successively after beam splitter, prism polarizers, convex lens II, polarization maintaining optical fibre I, and into electrooptic modulator, light is in Electro-optical Modulation
It is to be polarized outside in-plane polarization knead dough, and each component adds phase (t)=φ that two orthogonal polarized components are formed in device0The phase time difference of cos (ω t), two light components are τ, and light beam enters polarization maintaining optical fibre II after being come out from electrooptic modulator, light
Two orthogonal polarized components are transmitted along the fast axle and slow axis of polarization maintaining optical fibre II respectively, after light leaves polarization maintaining optical fibre II, are led to successively
It crosses convex lens III, wave plate I, lens platform, atomic force microscope, through-hole I and reaches sample surfaces, and reflected for the first time, for the first time
Reflected light passes through through-hole II, atomic force microscope, lens platform, wave plate II, convex lens IV and reaches plane mirror, and second of quilt successively
Reflection, second of reflected light pass through convex lens IV, wave plate II, lens platform, atomic force microscope, through-hole II and reach sample table successively
Face, and third time is reflected by sample surfaces, third time reflected light passes through through-hole I, atomic force microscope, lens platform, wave plate successively
I, convex lens III, polarization maintaining optical fibre II, electrooptic modulator, polarization maintaining optical fibre I, convex lens II, prism polarizers, then it is inclined by beam splitter
After turning, enter photodetector by convex lens I, two polarized components of third time reflected light occur to do at photodetector
It relates to, respectively along two orthogonal polarization components of the light of the slow axis and fast axle of polarization maintaining optical fibre II transmission, after polarization maintaining optical fibre II outputs
Corresponding Jones matrix is expressed asAfter wave plate I, two cross-polarizations of the light
The corresponding Jones matrix of component is changed intoWhereinIt is fixed for phase angle
JusticeTo indicate that light beam returns to electrooptic modulator whole process after two secondary reflections by sample surfaces
The phase meter of Jones matrix, two orthogonal polarization components of the light obtained in photodetector is shown asPhase difference exists
The component in x, y, z direction is respectively αx、αy、αz, Fourier analysis is carried out to the photoelectric current obtained in photodetector, locking phase is put
Big device obtains an order harmonic component of photoelectric current：
With the second harmonic component：
Consider symmetry, αKIt is reduced toWherein ω is the angle of the time dependent phase (t) of electrooptic modulator
Frequency, IincBe laser transmitting light light intensity, γ be light beam twice pass through following optical element beam splitter, prism polarizers,
Convex lens II, polarization maintaining optical fibre I, electrooptic modulator, polarization maintaining optical fibre II, convex lens III, convex lens IV, and reflected by sample surfaces
The remaining proportion of light intensity, J after twice1And J2It is single order respectively and second order is Bessel equation, αKIt is the linear of sample magnetization component
Equation, the sample magnetization component m in x, y, z directionx、my、mzTo αKContribution depend on Sample
Reflectance factor, the optical element in light path,
It is characterized in that a kind of the step of nanostructure strip magnetic measurement method distinguish it is as follows：
The method for measuring longitudinal Kerr effect：
For the fast axle of one, adjustment wave plates I with the directions y at 22.5 degree, the fast axle of adjustment wave plate II is consistent with the directions y so that is passing through
After wave plate I, the corresponding Jones matrix of two orthogonal polarization components of incident light is
Two, make probe approach sample surfaces by atomic force microscope, enable probe be scanned in two micron ranges, sweep speed
2 nm/secs determine sample edge position by the sample surface profiles obtained in scanning；
Three, probes bounce back 50 nanometers of distance upwards, and close the scanning feedback of atomic force microscope；
Four, adjust the position of laser so that the laser beam that laser is sent out enters the through-hole I of probe, and laser beam is in sample table
The first reflection light that is formed passes sequentially through the through-hole II, wave plate II, convex lens IV of probe and reaches plane mirror after the reflection of face, and by
Plane mirror reflects to form second of reflected light；
Five, adjust convex lens IV and mirror position so that and second of reflected light is mapped to sample surfaces by the through-hole II of probe,
And form third time reflected light；
Six, third times reflected lights are passed through the through-hole I of probe, atomic force microscope, lens platform, wave plate I, convex lens III, are protected successively
Deflected by beam splitter after polarisation fibre II, electrooptic modulator, polarization maintaining optical fibre I, convex lens II, prism polarizers, by convex lens I into
Enter photodetector, two polarized components of light beam interfere at photodetector；
Seven, photodetector output signals obtain differential phase after carrying out Fourier analysis to lock-in amplifier, in this condition
Under, one order harmonic component of light intensity
Longitudinal kerr rotationrpAnd rsRespectively P polarization light and S-polarization light is in sample
The reflectivity on product surface；
Eight, are by formulaKerr rotation is calculated；
Pole is measured to Kerr effect method：
For the fast axle of one, adjustment wave plates I with the directions y at 22.5 degree, the fast axle of adjustment wave plate II is consistent with the directions y so that is passing through
After wave plate I, the corresponding Jones matrix of two orthogonal polarization components of incident light is
Two, make probe approach sample surfaces by atomic force microscope, enable probe be scanned in two micron ranges, sweep speed
2 nm/secs determine sample edge position by the sample surface profiles obtained in scanning；
Three, probes bounce back 50 nanometers of distance upwards, and close the scanning feedback of atomic force microscope；
Four, adjust the position of laser so that the laser beam that laser is sent out enters the through-hole I of probe, and laser beam is in sample table
The first reflection light that is formed passes sequentially through the through-hole II, wave plate II, convex lens IV of probe and reaches plane mirror after the reflection of face, and by
Plane mirror reflects to form second of reflected light；
Five, adjust convex lens IV and mirror position so that and second of reflected light is mapped to sample surfaces by the through-hole II of probe,
And form third time reflected light；
Six, third times reflected lights are passed through the through-hole I of probe, atomic force microscope, lens platform, wave plate I, convex lens III, are protected successively
Deflected by beam splitter after polarisation fibre II, electrooptic modulator, polarization maintaining optical fibre I, convex lens II, prism polarizers, by convex lens I into
Enter photodetector, two polarized components of light beam interfere at photodetector；
Seven, photodetector output signals obtain differential phase after carrying out Fourier analysis to lock-in amplifier, in this condition
Under, one order harmonic component of light intensity
Pole is to kerr rotationrpAnd rsRespectively P polarization light and S-polarization light is in sample
The reflectivity on product surface,
Eight, are by formulaKerr rotation is calculated；
Measure transverse Kerr effect method：
One, removes wave plate I, and the fast axle of adjustment wave plate II is with the directions y at 45 degree so that after wave plate I, two of incident light
The corresponding Jones matrix of orthogonal polarization components isWith
Two, make probe approach sample surfaces by atomic force microscope, enable probe be scanned in two micron ranges, sweep speed
2 nm/secs determine sample edge position by the sample surface profiles obtained in scanning；
Three, probes bounce back 50 nanometers of distance upwards, and close the scanning feedback of atomic force microscope；
Four, adjust the position of laser so that the laser beam that laser is sent out enters the through-hole I of probe, and laser beam is in sample table
The first reflection light that is formed passes sequentially through the through-hole II, wave plate II, convex lens IV of probe and reaches plane mirror after the reflection of face, and by
Plane mirror reflects to form second of reflected light；
Five, adjust convex lens IV and mirror position so that and second of reflected light is mapped to sample surfaces by the through-hole II of probe,
And form third time reflected light；
Six, third times reflected lights are passed through the through-hole I of probe, atomic force microscope, lens platform, wave plate I, convex lens III, are protected successively
Deflected by beam splitter after polarisation fibre II, electrooptic modulator, polarization maintaining optical fibre I, convex lens II, prism polarizers, by convex lens I into
Enter photodetector, two polarized components of light beam interfere at photodetector；
Seven, photodetector output signals obtain differential phase after carrying out Fourier analysis to lock-in amplifier, in this condition
Under, one order harmonic component of light intensityLateral kerr rotationrp
And rsThe respectively reflectivity of P polarization light and S-polarization light in sample surfaces；
Eight, are by formulaKerr rotation is calculated.
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