TWI499766B - Detection system with high sensitivity surface plasmon resonance detection and its application - Google Patents
Detection system with high sensitivity surface plasmon resonance detection and its application Download PDFInfo
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本發明係與表面電漿共振技術有關，特別是指一種具有高靈敏度之表面電漿共振偵測方法及其應用之偵測系統。The invention relates to surface plasma resonance technology, in particular to a surface acoustic resonance detection method with high sensitivity and a detection system thereof.
表面電漿是一種發生於金屬及介電質之間的介面，由自由電子的同調振盪，引致表面電漿波(surface plasmon wave，SPW)之方式；可藉由一入射光波入射一金屬介面，在入射光波與金屬介面之電子振盪相位匹配或共振的條件下，該入射光波之能量使自由電子集體之振盪耦合至金屬表面之現象，稱為表面電漿共振(surface plasmon resonance，SPR)，此時，沿金屬介面傳遞之電磁波即為表面電漿波，藉由觀察反射光波之能量衰減光譜可測得由該入射光波之能量轉移產生出之表面電漿波。由於表面電漿共振對於與金屬鄰接之介電環境亦即介電質折射率變化有極高靈敏度，因而此技術已廣泛運用於物理、化學、生物醫學等之表面檢測技術；尤其生物醫學之感測應用，當生物體內之介質折射率稍有改變時，則藉由表面電漿共振之靈敏度偵測反應。Surface plasma is a kind of interface between metal and dielectric, which is caused by coherent oscillation of free electrons, causing surface plasmon wave (SPW); it can be incident on a metal interface by an incident light wave. Under the condition that the incident light wave and the electronic oscillation of the metal interface are phase matched or resonated, the energy of the incident light wave causes the oscillation of the free electrons to couple to the metal surface, which is called surface plasmon resonance (SPR). When the electromagnetic wave transmitted along the metal interface is a surface plasma wave, the surface plasma wave generated by the energy transfer of the incident light wave can be measured by observing the energy attenuation spectrum of the reflected light wave. Since surface plasma resonance has extremely high sensitivity to dielectric environment adjacent to metal, that is, dielectric refractive index change, this technology has been widely used in surface detection technology of physics, chemistry, biomedicine, etc.; In the measurement application, when the refractive index of the medium in the living body is slightly changed, the reaction is detected by the sensitivity of the surface plasma resonance.
前述入射光波之能量轉移現象可如D.C. Cullen等人於1987-1988年Biosensor所發表之「Detecton of immune-complex formation via surface Plasmon resonance on gold-coated diffraction gratings」，提出藉由稜鏡耦合或光柵耦合技術激發表面電漿波。如第一圖所示一種Kretschmann組態之衰逝全反射式稜鏡耦合技術，將該入射光通過稜鏡-金屬-介電質所製成之光耦合器1，達成產生表面電漿共振之耦合條件；其中，利用偵測稜鏡10與金屬層12介面之反射光強度或反射電場相位變化，即可於介電質14之折射率有變化時獲得表面電漿波之共振現象，尤其相位變化偵測方式藉由入射光之橫向電場模態(transverse-electric mode，TE mode)(橫電模或S偏振波)與橫向磁場模態(transverse-magnetic mode，TM mode)(橫磁模或P偏振波)之共光程外差式干涉現象，於橫向磁場模態滿足表面電漿波共振條件而發生明顯相位改變時，可測得因兩者相差變化所反應干涉現象之明顯變異。The energy transfer phenomenon of the incident light wave can be as described in "Detecton of immune-complex formation via surface Plasmon resonance on gold-coated diffraction grating" published by DC Cullen et al., Biosensor, 1987-1988, by 稜鏡 coupling or grating coupling. Technology stimulates surface plasma waves. As shown in the first figure, a Kretschmann configuration evanescent total reflection 稜鏡 coupling technique is used to pass the incident light through the iridium-metal-dielectric photocoupler 1 to achieve surface plasmon resonance. The coupling condition; wherein, by detecting the reflected light intensity or the phase change of the reflected electric field between the interface of the germanium 10 and the metal layer 12, the resonance phenomenon of the surface plasma wave can be obtained when the refractive index of the dielectric 14 changes, especially the phase The change detection method is based on the transverse-electric mode (TE mode) (transverse mode or S-polarized wave) and the transverse-magnetic mode (TM mode) of the incident light (transverse magnetic mode or The common optical path heterodyne interference phenomenon of P-polarized wave can detect the obvious variation of the interference phenomenon due to the change of the phase difference when the transverse magnetic field mode satisfies the surface plasma wave resonance condition and the phase changes obviously.
由於影響表面電漿共振的主要因素中，入射光之入射角及金屬層12厚度，皆為於偵測組態中可調變的控制因子；一般之靈敏度測定實驗中，係以改變金屬層12厚度，觀察如第二圖所示，橫電模與橫磁模之反射干涉相位差對應入射光於稜鏡10與金屬層12介面之入射角θ改變之關係，當固定於表面電漿波共振發生所對應之特定之入射角θ，即可取得如第三圖所示不同金屬層12厚度之相位差變化斜率，進一步可於最大相位差變化時得最佳表面電漿波共振條件所需之金屬層12厚度。然而，為了取得表面電漿波共振的最佳靈敏度條件，實驗上縱可以薄膜製程方式逐次的改變金屬層12厚度；但實際上在生物醫學之感測應用時，不同生物體其體內之介質折射率亦不同，故需直接於生物體上調變表面電漿波共振結構以改變金屬層12至最佳靈敏度條件的厚度，致使難以精確的控制此調變因子，對偵測結果往往具有較大的誤差。Among the main factors affecting the surface plasma resonance, the incident angle of the incident light and the thickness of the metal layer 12 are all control factors that can be adjusted in the detection configuration; in the general sensitivity measurement experiment, the metal layer is changed 12 Thickness, as shown in the second figure, the phase difference of the reflection interference between the transverse electric mode and the transverse magnetic mode corresponds to the relationship between the incident angle θ of the incident light on the interface between the crucible 10 and the metal layer 12, and is fixed to the surface plasma wave resonance. When the specific incident angle θ occurs, the phase difference variation slope of the thickness of the different metal layers 12 as shown in the third figure can be obtained, and the optimum surface plasma wave resonance condition can be obtained when the maximum phase difference is changed. Metal layer 12 thickness. However, in order to obtain the optimal sensitivity condition of surface plasma wave resonance, the thickness of the metal layer 12 can be changed successively in the film process mode; but in fact, in the biomedical sensing application, the medium refraction of different organisms in the body The rate is also different, so it is necessary to adjust the surface plasma wave resonance structure directly on the living body to change the thickness of the metal layer 12 to the optimum sensitivity condition, so that it is difficult to accurately control the modulation factor, and the detection result often has a large error.
有鑑於此，本案發明人致力於改善表面電漿共振之偵測靈敏度，期能讓廣泛的光電研究者能方便進行實驗，有效應用在表面探測技術。In view of this, the inventor of the present invention is working to improve the detection sensitivity of the surface plasma resonance, so that a wide range of photoelectric researchers can easily carry out experiments and effectively apply the surface detection technology.
本發明之主要目的在於提供一種具有高靈敏度之表面電漿共振偵測方法及其應用之偵測系統，係以有效控制的調變因子提高所應用之表面探測技術的偵測靈敏度。The main object of the present invention is to provide a surface acoustic resonance detection method with high sensitivity and a detection system thereof, which improves the detection sensitivity of the applied surface detection technology with an effectively controlled modulation factor.
為達成上述目的，本發明所提供一種表面電漿共振偵測方法，用以感測入射光源經一光耦合器產生之表面電漿波，該光耦合器具有一稜鏡及設於該稜鏡一第一表面之一金屬層，所述偵測方法包含有以下步驟：In order to achieve the above object, the present invention provides a surface plasma resonance detecting method for sensing a surface plasma wave generated by an incident light source via an optical coupler, wherein the optical coupler has a chirp and is disposed on the first a metal layer of the first surface, the detecting method comprising the following steps:
a. 將該光耦合器設於一旋轉台上，使該稜鏡之第一表面垂直該旋轉台；a. The optical coupler is disposed on a rotating table such that the first surface of the crucible is perpendicular to the rotating table;
b. 提供電場振動方向相互垂直之一第一及一第二電磁波，同時入射該稜鏡之一第二表面，該第一或第二電磁波其中之一者之電場振動方向平行該第一表面，該第一及第二電磁波於該稜鏡內係以一入射角入射於該第一表面，並自該稜鏡之一第三表面分別以一第一及一第二反射波出射，該第二及第三表面垂直該旋轉台；b. providing one of the first and second electromagnetic waves perpendicular to each other in the direction of the electric field vibration, and simultaneously entering one of the second surfaces of the crucible, wherein the electric field vibration direction of one of the first or second electromagnetic waves is parallel to the first surface, The first and second electromagnetic waves are incident on the first surface at an incident angle in the crucible, and are emitted from a third surface of the crucible by a first and a second reflected wave, respectively. And the third surface is perpendicular to the rotating table;
c. 使該第一及第二反射波經過一分析器，該分析器具有與該旋轉台之平面夾特定偏振角度之一干涉光軸，該第一及第二反射波通過該分析器之干涉光軸後分別形成具有相同電場振動方向之一第一及一第二干涉光；c. passing the first and second reflected waves through an analyzer, the analyzer having an interference optical axis with one of a specific polarization angle of the plane of the rotating table, and interference of the first and second reflected waves through the analyzer Forming a first and a second interference light having the same electric field vibration direction respectively after the optical axis;
d. 旋轉該旋轉台以逐次改變該稜鏡之入射角，檢測該第一及第二干涉光所產生之干涉訊號之變化，以得該第一及第二干涉光之相位差之變化，形成該第一及第二干涉光之相位差對應於不同入射角的一相位差曲線；以及，d. rotating the rotating table to sequentially change the incident angle of the cymbal, detecting the change of the interference signal generated by the first and second interference lights, to obtain a change in the phase difference between the first and second interference lights, forming a phase difference between the first and second interference lights corresponds to a phase difference curve of different incident angles; and
e. 改變該分析器之干涉光軸於不同偏振角度，並記錄該等偏振角度下分別對應之各該相位差曲線之變化率，其中最大變化率所對應之偏振角度及入射角分別為一最佳干涉角及一共振角，可使上述入射光源產生具有最佳靈敏度之表面電漿共振效應。e. changing the interference optical axis of the analyzer to different polarization angles, and recording the rate of change of each of the phase difference curves corresponding to the polarization angles, wherein the polarization angle and the incident angle corresponding to the maximum rate of change are respectively the highest A good interference angle and a resonance angle allow the incident light source to produce a surface plasma resonance effect with optimum sensitivity.
上述偵測方法更可於步驟b中，提供一電光晶體，具有一第一及一第二偏振軸，所述入射光源通過該電光晶體產生電場振動方向分別位於該第一及第二偏振軸之該第一及第二電磁波，步驟d中，提供該電光晶體一交流電壓訊號，使該第一及第二電磁波之相位差具有與該交流電壓訊號相同之時變頻率。更可於步驟c中，以一光偵測器接收該第一及第二干涉光，以一鎖相放大器電性連接該光偵測器，步驟d中，自該鎖相放大器輸出與該交流電壓訊號具有相同之時變頻率之干涉訊號。更可於步驟b中，使所述入射光源通過該電光晶體之前其電場振動方向位於與該電光晶體之第一及第二偏振軸相同之平面上，並於通過該電光晶體後形成相同強度之該第一及第二電磁波。The detecting method further includes an electro-optic crystal having a first and a second polarization axis, wherein the incident light source generates an electric field vibration direction through the electro-optic crystal, respectively, at the first and second polarization axes. In the first and second electromagnetic waves, in step d, the electro-optic crystal is provided with an alternating current voltage signal, so that the phase difference between the first and second electromagnetic waves has the same time-varying frequency as the alternating current voltage signal. In step c, the first and second interference lights are received by a photodetector, and the phase detector is electrically connected to the photodetector. In step d, the phase-locked amplifier outputs the AC. The voltage signal has the same time-varying frequency interference signal. In step b, the incident light source is placed on the same plane as the first and second polarization axes of the electro-optic crystal before passing through the electro-optic crystal, and the same intensity is formed after passing through the electro-optic crystal. The first and second electromagnetic waves.
且，更可於步驟d中，於該第一及第二干涉光所產生之干涉訊號具有最小強度時判斷該稜鏡之入射角形成所述共振角之條件。更可於步驟e中，於該共振角條件下，擷取不同之偏振角度時該相位差曲線之最大變化率所對應之偏振角度為所述最佳干涉角。Moreover, in step d, when the interference signal generated by the first and second interference lights has a minimum intensity, the condition that the incident angle of the pupil forms the resonance angle is determined. Further, in step e, under the condition of the resonance angle, the polarization angle corresponding to the maximum rate of change of the phase difference curve when the polarization angle is different is the optimal interference angle.
且，更可於步驟d中，於該相位差曲線之最大變化率所對應之該入射角為所述共振角。更可於步驟e中，於該共振角條件下，擷取該分析器不同之偏振角度時該相位差曲線之最大變化率所對應之偏振角度為所述最佳干涉角。Moreover, in step d, the incident angle corresponding to the maximum rate of change of the phase difference curve is the resonance angle. Further, in step e, under the condition of the resonance angle, the polarization angle corresponding to the maximum rate of change of the phase difference curve when the polarization angle of the analyzer is different is the optimal interference angle.
且，更可於步驟b中，使該第一及第二電磁波以共光程入射該稜鏡，步驟d中，提供該第一或第二電磁波一交流電壓訊號，使該第一及第二電磁波之相位差具有與該交流電壓訊號相同之時變頻率。更可於步驟c中，以一光偵測器接收該第一及第二干涉光，以一鎖相放大器電性連接該光偵測器，步驟d中，自該鎖相放大器輸出與該交流電壓訊號具有相同之時變頻率之干涉訊號。Moreover, in step b, the first and second electromagnetic waves are incident on the crucible with a common optical path, and in step d, the first or second electromagnetic wave-AC voltage signal is provided to make the first and second The phase difference of the electromagnetic wave has the same time varying frequency as the alternating voltage signal. In step c, the first and second interference lights are received by a photodetector, and the phase detector is electrically connected to the photodetector. In step d, the phase-locked amplifier outputs the AC. The voltage signal has the same time-varying frequency interference signal.
為達成上述偵測方法所應用之偵測系統，本發明提供一種表面電漿共振偵測系統，包含有：一耦合裝置，具有一光耦合器及一旋轉台，該光耦合器具有一稜鏡及設於該稜鏡一第一表面之一金屬層，旋轉台用以設置該稜鏡並使該稜鏡之第一表面、一第二表面以及一第三表面垂直該旋轉台；一控制單元，用以控制電場振動方向相互垂直之一第一及一第二電磁波以不同之傳遞頻率入射該稜鏡之第二表面，該第一及第二電磁波於該稜鏡內以一入射角入射該第一表面，並自該稜鏡之第三表面分別以一第一及一第二反射波出射，該第一或第二電磁波其中之一者之電場振動方向平行該第一表面，另一者係於該入射角之條件為一共振角時產生表面電漿共振效應；以及一偵測單元，具有一分析器，係與該旋轉台之平面夾特定偏振角度之一干涉光軸，使該第一及第二反射波通過該分析器後分別形成具有相同電場振動方向之一第一及一第二干涉光；該偵測單元係依據該第一或第二電磁波之傳遞頻率以偵測該第一及第二干涉光之相位差變化，並擷取對應於不同入射角的相位差變化率，該分析器之干涉光軸於一最佳干涉角條件下所述相位差變化率具有最大值，使上述表面電漿共振偵測系統產生之表面電漿共振效應具有最佳靈敏度。In order to achieve the detection system applied by the above detection method, the present invention provides a surface plasma resonance detection system, comprising: a coupling device having an optical coupler and a rotary table, the optical coupler having a a metal layer disposed on the first surface of the first surface, the rotating table is configured to set the crucible and the first surface, a second surface and a third surface of the crucible are perpendicular to the rotating table; a control unit, The first and second electromagnetic waves are incident on the second surface of the crucible at different transmission frequencies, and the first and second electromagnetic waves are incident on the crucible at an incident angle. a surface, and the first surface and the second reflected wave are emitted from the third surface of the crucible, and the electric field vibration direction of one of the first or second electromagnetic waves is parallel to the first surface, and the other is Generating a surface plasma resonance effect when the incident angle is a resonance angle; and a detecting unit having an analyzer that interferes with the optical axis by one of a specific polarization angle of the plane of the rotating table, so that the first Second counter The wave passes through the analyzer to form a first and a second interference light having the same electric field vibration direction respectively; the detecting unit detects the first and second interference according to the transmission frequency of the first or second electromagnetic wave The phase difference of light changes, and the phase difference change rate corresponding to different incident angles is obtained, and the interference optical axis of the analyzer has a maximum value of the phase difference change rate under an optimal interference angle condition, so that the surface plasma is The surface plasma resonance effect produced by the resonance detection system has the best sensitivity.
上述偵測系統更可有一電光晶體，具有一第一及一第二偏振軸，該電光晶體用以產生電場振動方向分別與該第一及第二偏振軸相互平行之該第一及第二電磁波。該控制單元更可具有一信號產生器提供該電光晶體一交流電壓訊號，該偵測單元具有一鎖相放大器電性連接該信號產生器，使該偵測單元所偵測之該第一及第二干涉光之相位差具有與該交流電壓訊號相同之時變頻率。更可有一偏振器，用以產生一偏振光使該偏振光之電場振動方向位於與該電光晶體之第一及第二偏振軸相同之平面上，該偏振光通過該電光晶體形成相同強度之該第一及第二電磁波。該偏振器更可具有一線性偏振光軸，係與該電光晶體之第一及第二偏振軸相交45度夾角。The detection system may further include an electro-optic crystal having a first and a second polarization axis, wherein the electro-optical crystal is configured to generate the first and second electromagnetic waves whose electric field vibration directions are parallel to the first and second polarization axes, respectively. . The control unit further includes a signal generator for providing the electro-optic crystal-AC voltage signal, the detecting unit having a lock-in amplifier electrically connected to the signal generator, so that the detecting unit detects the first and the first The phase difference of the two interfering lights has the same time varying frequency as the alternating voltage signal. Further, a polarizer is configured to generate a polarized light such that the direction of the electric field vibration of the polarized light is on a same plane as the first and second polarization axes of the electro-optic crystal, and the polarized light forms the same intensity through the electro-optic crystal. First and second electromagnetic waves. The polarizer may further have a linearly polarized optical axis that intersects the first and second polarization axes of the electro-optic crystal at an angle of 45 degrees.
且，更可使該第一及第二電磁波為共光程入射該稜鏡，且其中之一者受一交流電壓訊號控制形成與該交流電壓訊號具有相同之時變頻率。該控制單元更可具有一信號產生器提供該交流電壓訊號，該偵測單元具有一鎖相放大器電性連接該信號產生器，使該偵測單元所偵測之該第一及第二干涉光之相位差具有與該交流電壓訊號相同之時變頻率。Moreover, the first and second electromagnetic waves are incident on the chirp in a common optical path, and one of them is controlled by an alternating current voltage signal to form a time-varying frequency having the same frequency as the alternating current voltage signal. The control unit may further include a signal generator for providing the AC voltage signal, the detecting unit having a lock-in amplifier electrically connected to the signal generator, and the first and second interference lights detected by the detecting unit The phase difference has the same time varying frequency as the alternating voltage signal.
為了詳細說明本發明之結構、特徵及功效所在，茲舉以下較佳實施例並配合圖式說明如後，其中：第四圖為本發明所提供最佳實施例之裝置示意圖；第五圖為上述最佳實施例所提供耦合裝置之上視圖；第六圖為上述最佳實施例所提供偵測單元於分析器不同偏振角度下，控制單元之輸出裝置所測得干涉訊號之相位差曲線，表示干涉訊號之相位差對應於耦合裝置之稜鏡入射角的關係；第七圖為上述最佳實施例所提供偵測單元之分析器於不同偏振角度下，控制單元之輸出裝置所測得干涉訊號之訊號強度變化，表示干涉訊號與入射光源之光功率比對應於耦合裝置之稜鏡入射角的關係；第八圖為上述最佳實施例所提供耦合裝置於表面電漿共振發生之共振角條件下，控制單元之輸出裝置所測得干涉訊號之相位差變化率，表示相位差曲線變化率對應於分析器之偏振角度的關係；第九圖為上述最佳實施例所提供偵測單元於分析器不同偏振角度下，控制單元之輸出裝置所測得耦合裝置之表面電漿共振現象，表示當耦合裝置之環境介質發生改變之偵測時間點對應於干涉訊號之相位差的變化關係。In order to explain the structure, features and advantages of the present invention in detail, the following description of the preferred embodiments and the accompanying drawings in which: FIG. The above preferred embodiment provides a top view of the coupling device; the sixth figure is the phase difference curve of the interfering signal measured by the output unit of the control unit at different polarization angles of the analyzer provided by the above preferred embodiment. The phase difference indicating the interference signal corresponds to the relationship of the incident angle of the coupling device; the seventh figure is the interference measured by the output device of the control unit at different polarization angles of the analyzer provided by the above preferred embodiment. The change of the signal intensity of the signal indicates that the optical power ratio of the interference signal to the incident light source corresponds to the incident angle of the coupling device; the eighth figure shows the resonance angle of the coupling device provided by the preferred embodiment in the surface plasma resonance. Under the condition, the phase difference change rate of the interference signal measured by the output device of the control unit indicates that the phase difference curve change rate corresponds to the analyzer bias The relationship between the angles; the ninth figure is the surface plasma resonance phenomenon of the coupling device measured by the output unit of the control unit under the different polarization angles of the analyzer provided by the above preferred embodiment, indicating the environmental medium of the coupling device The detection time point at which the change occurs corresponds to the change in the phase difference of the interference signal.
請參閱如第四圖所示，為本發明最佳實施例所提供一表面電漿偵測系統2，該偵測系統包括有一光學組件20、一耦合裝置30、一偵測單元40及一控制單元50，其中：Referring to the fourth embodiment, a surface plasma detecting system 2 is provided for the preferred embodiment of the present invention. The detecting system includes an optical component 20, a coupling device 30, a detecting unit 40, and a control unit. Unit 50, wherein:
該光學組件20具有一入射光源22、一偏光器24及一電光晶體26，該入射光源22為具有良好指向性的光源，可利用如本實施例所提供之偏光器24使改變為具有特定極化電場方向之偏振光，再入射至該電光晶體26；該電光晶體26具有光學異向性，可依其光軸方向改變入射電磁波之極化電場為相互垂直且相位相異之尋常光及非尋常光，以本實施例所提供具有雙折射(birefringence)之單軸(uniaxial)晶體特性者，當入射電磁波之行進方向異於該電光晶體26之光軸時，入射電磁波通過電光晶體26後則形成極化電場為與該電光晶體26之二偏振軸分別同向之一第一及一第二電磁波，其中該二偏振軸之慢軸及快軸分別對應產生之尋常光及非尋常光即為該第一及第二電磁波。該電光晶體26電性連接該控制單元50，可接收一交流電壓訊號AC，使該電光晶體16產生感應電場，只要感應電場於該電光晶體16之任一該偏振軸方向上有其電場分量，則尋常光或非尋常光所對應第一或第二電磁波之極化電場可隨交流訊號之時序變化而改變。The optical component 20 has an incident light source 22, a polarizer 24, and an electro-optic crystal 26. The incident light source 22 is a light source having good directivity, and can be changed to have a specific pole by using the polarizer 24 as provided in this embodiment. The polarized light in the direction of the electric field is incident on the electro-optic crystal 26; the electro-optic crystal 26 has an optical anisotropy, and the polarized electric field of the incident electromagnetic wave can be changed according to the direction of the optical axis to be ordinary light and phase which are different from each other and have different phases. Ordinary light, in the case of the uniaxial crystal characteristic having birefringence provided in this embodiment, when the traveling direction of the incident electromagnetic wave is different from the optical axis of the electro-optical crystal 26, the incident electromagnetic wave passes through the electro-optic crystal 26 Forming a polarization electric field is one of the first and second electromagnetic waves respectively in the same direction as the two polarization axes of the electro-optical crystal 26, wherein the slow axis and the fast axis of the two polarization axes respectively generate the ordinary light and the extraordinary light The first and second electromagnetic waves. The electro-optical crystal 26 is electrically connected to the control unit 50, and receives an alternating voltage signal AC, so that the electro-optic crystal 16 generates an induced electric field, as long as the induced electric field has an electric field component in the direction of any one of the polarization axes of the electro-optical crystal 16. The polarized electric field of the first or second electromagnetic wave corresponding to the ordinary light or the extraordinary light may change according to the timing of the alternating signal.
本發明所提供該光學組件20之特徵在使該第一及第二電磁波通過該耦合裝置30發生共光程外差式干涉現象，故使兩者具有相當之強度以滿足可觀測的干涉條件為主，因此該入射光源22及偏光器24之設計在使入射至該電光晶體26之電磁波可於該二偏振軸之分量上具有相當之強度，並不限定該偏光器24所產生之偏振光形式；舉例而言，若該偏光器24產生以線性偏振光或圓偏振光入射至該電光晶體26，使該偏振光之電場振動方向位於與該電光晶體26之二偏振軸相同之平面上，其中為線性偏振光者與該二偏振軸相交同樣的45度夾角，則該偏振光通過該電光晶體便可形成相同強度之該第一及第二電磁波。至於若該入射光源22本身(如雷射光)即為具有圓偏振光或特定偏振方向的線偏振光，本發明當然可直接省略偏光器24之設置；因而以本實施例所例舉之入射光源22或入射光源22與偏光器24之組合，僅需有產生特定極化電場方向之光學元件即可，並不在此限。當然，該電光晶體26之設置主要為使入射該耦合裝置30之第一及第二電磁波共光程，且可由該控制單元50之交流電壓訊號AC控制第一或第二電磁波之時序變化，任何可產生此光學特性之第一及第二電磁波之光學組件皆為本發明所涵蓋之技術範疇，因而不在此限。The optical component 20 provided by the present invention is characterized in that the first and second electromagnetic waves pass through the coupling device 30 to cause a common optical path heterodyne interference phenomenon, so that the two have considerable strength to satisfy the observable interference condition. Therefore, the incident light source 22 and the polarizer 24 are designed such that the electromagnetic wave incident on the electro-optic crystal 26 can have a considerable intensity on the components of the two polarization axes, and the polarized light form generated by the polarizer 24 is not limited. For example, if the polarizer 24 generates linearly polarized light or circularly polarized light to be incident on the electro-optic crystal 26, the electric field vibration direction of the polarized light is located on the same plane as the two polarization axes of the electro-optic crystal 26, wherein When the linearly polarized light intersects the two polarization axes at the same angle of 45 degrees, the polarized light passes through the electro-optic crystal to form the first and second electromagnetic waves of the same intensity. As for the incident light source 22 itself (such as laser light), which is linearly polarized light having a circularly polarized light or a specific polarization direction, the present invention can of course directly omit the arrangement of the polarizer 24; thus, the incident light source exemplified in the embodiment 22 or a combination of the incident light source 22 and the polarizer 24, it is only necessary to have an optical element that generates a specific polarization electric field direction, and is not limited thereto. Of course, the electro-optical crystal 26 is disposed mainly to make the first and second electromagnetic waves incident on the coupling device 30 common optical path, and the alternating voltage signal AC of the control unit 50 can control the timing change of the first or second electromagnetic wave, any The optical components of the first and second electromagnetic waves that can produce such optical characteristics are all within the technical scope covered by the present invention, and thus are not limited thereto.
該耦合裝置30具有由一稜鏡32及一金屬層34所構成之一光耦合器36，以及用以旋轉並擺置該光耦合器36之一旋轉台38；配合第五圖參照，其中該金屬層34設於該稜鏡32之一第一表面322，且該稜鏡32之一第二表面324、一第三表面326以及該第一表面322皆垂直該旋轉台38，使該稜鏡32之第一表面322可繞該旋轉台38之軸向旋轉。因此該耦合裝置30係供自該光學組件20形成之第一及第二電磁波入射該稜鏡32之第二表面324，且於該稜鏡32內以可變化之一入射角θ入射該第一表面322，再由該第三表面326分別以一第一及一第二反射波出射。尤其，本實施例所提供該光學組件20藉由設計該電光晶體26之二偏振軸為分別垂直及平行該旋轉台38，故任一該第一或第二電磁波之電場方向係垂直或平行該旋轉台38；因而第一及第二電磁波入射該稜鏡32後電場方向垂直該旋轉台38者即以橫向電場模態入射該第一表面322，另一者以橫向磁場模態入射該第一表面322，並可於該入射角θ之條件為一共振角時產生表面電漿共振效應，此條件下由該第三表面326出射者幾乎為未參與表面電漿共振的橫電模，而參與表面電漿共振的橫磁模之反射波光程相較於橫電模產生位移，故第一及第二反射波之間有明顯的相位差改變，且自該第三表面326出射時原本第一及第二反射波之間的共光程干涉也有明顯的衰減現象。The coupling device 30 has an optical coupler 36 formed by a stack 32 and a metal layer 34, and a rotating table 38 for rotating and arranging the optical coupler 36; The metal layer 34 is disposed on one of the first surfaces 322 of the crucible 32, and the second surface 324, the third surface 326, and the first surface 322 of the crucible 32 are perpendicular to the rotating table 38, so that the crucible The first surface 322 of the 32 is rotatable about the axis of the rotary table 38. Therefore, the coupling device 30 is configured to receive the first and second electromagnetic waves formed from the optical component 20 into the second surface 324 of the crucible 32, and enter the first in the crucible 32 at a changeable incident angle θ. The surface 322 is further emitted by the third surface 326 by a first and a second reflected wave. In particular, the optical component 20 of the present embodiment provides that the two polarization axes of the electro-optic crystal 26 are perpendicular and parallel to the rotating table 38, respectively, so that the electric field direction of any of the first or second electromagnetic waves is vertical or parallel. Rotating table 38; thus, when the first and second electromagnetic waves are incident on the crucible 32, the electric field direction is perpendicular to the rotating table 38, that is, the first surface 322 is incident in a transverse electric field mode, and the other is incident on the first surface in a transverse magnetic field mode. The surface 322 can generate a surface plasma resonance effect when the condition of the incident angle θ is a resonance angle. Under this condition, the third surface 326 is emitted by the third surface 326, which is almost a transverse electric mode that does not participate in the surface plasma resonance. The reflected wave path of the transverse magnetic mode of the surface plasma resonance is displaced compared to the transverse electric mode, so that there is a significant phase difference change between the first and second reflected waves, and the first time is emitted from the third surface 326. The common optical path interference between the second reflected wave also has a significant attenuation phenomenon.
該偵測單元40具有一分析器42、一光偵測器44及一鎖相放大器46，該分析器42具有與該旋轉台之平面夾特定偏振角度α之一干涉光軸，可供電磁波以單一電場振動方向通過，該光偵測器44用以接收通過該分析器42的電磁波；故由該耦合裝置30之稜鏡32第三表面326出射的第一及第二反射波可於通過該分析器42後形成具有相同電場振動方向之共光程的第一及第二干涉光，並由該光偵測器44輸出兩者於干涉條件下對應產生之干涉訊號。該鎖相放大器46電性連接該光偵測器44及該控制單元50，由於該控制單元50所產生之交流電壓訊號AC使第一或第二電磁波之極化電場可隨交流電壓訊號AC之時序變化而改變，使自該光偵測器44輸出者亦為隨時間改變之干涉訊號；因此該鎖相放大器46可依據該控制單元50提供該電光晶體26之交流電壓訊號AC，將該光偵測器44所產生之干涉訊號取出對應頻率之鎖相信號。The detecting unit 40 has an analyzer 42, a photodetector 44 and a lock-in amplifier 46. The analyzer 42 has an interference optical axis with a plane of a specific polarization angle α of the plane of the rotating table, and is available for electromagnetic waves. a single electric field vibrating direction passes, the photodetector 44 is configured to receive electromagnetic waves passing through the analyzer 42; therefore, the first and second reflected waves emitted by the third surface 326 of the 稜鏡32 of the coupling device 30 can pass through the After the analyzer 42 forms the first and second interference lights having the common optical path of the same electric field vibration direction, and the photodetector 44 outputs the interference signals correspondingly generated by the two under the interference condition. The lock-in amplifier 46 is electrically connected to the photodetector 44 and the control unit 50. The AC voltage generated by the control unit 50 causes the polarization electric field of the first or second electromagnetic wave to follow the AC voltage signal AC. The output of the photodetector 44 is also an interfering signal that changes with time; therefore, the lock-in amplifier 46 can provide the AC voltage signal AC of the electro-optic crystal 26 according to the control unit 50. The interference signal generated by the detector 44 takes out the phase-locked signal of the corresponding frequency.
該控制單元50具有一信號產生器52及一輸出裝置54，信號產生器52電性連接該電光晶體26及該鎖相放大器46，用以輸出上述交流電壓訊號AC，於該電光晶體16內部產生隨時變之感應電場，影響對應於該電光晶體26光軸之光學特性，因而間接影響第一或第二電磁波之極化電場。該輸出裝置54電性連接該鎖相放大器46，用以讀取上述鎖相信號，當中包含有對應干涉訊號之強度或第一及第二干涉光之相位差；且當耦合裝置30或偵測單元40於不同條件因素下，如旋轉該旋轉台36以改變該稜鏡32之入射角θ，或旋轉該分析器42之干涉光軸於不同偏振角度α，則該輸出裝置54可產生如第六或第七圖所示於該等條件因素改變下所對應鎖相信號之變化；其中，第六圖所示為分析器42於不同偏振角度α下，第一及第二干涉光之相位差φ對應於該稜鏡32入射角θ變化的一相位差曲線，第七圖所示為分析器42於不同偏振角度α下，干涉訊號與入射光源22之光功率比R對應於該稜鏡32入射角θ之變化。The control unit 50 has a signal generator 52 and an output device 54. The signal generator 52 is electrically connected to the electro-optical crystal 26 and the lock-in amplifier 46 for outputting the AC voltage signal AC, and is generated inside the electro-optic crystal 16 . The induced electric field changes at any time, affecting the optical characteristics corresponding to the optical axis of the electro-optic crystal 26, thereby indirectly affecting the polarization electric field of the first or second electromagnetic wave. The output device 54 is electrically connected to the lock-in amplifier 46 for reading the phase-locked signal, which includes the intensity of the corresponding interference signal or the phase difference between the first and second interference lights; and when the coupling device 30 or the detection The output device 54 can generate the same as the unit 40 under different conditions, such as rotating the rotating table 36 to change the incident angle θ of the crucible 32, or rotating the interference optical axis of the analyzer 42 to different polarization angles α. The change of the phase-locked signal corresponding to the change of the condition factors is shown in FIG. 6 or FIG. 7; wherein the sixth figure shows the phase difference between the first and second interference lights of the analyzer 42 at different polarization angles α. φ corresponds to a phase difference curve of the change angle θ of the 稜鏡32, and the seventh figure shows that the optical power ratio R of the interference signal and the incident light source 22 corresponds to the 稜鏡32 under different polarization angles α of the analyzer 42. The change in the incident angle θ.
值得一提的是，該控制單元50可以全自動或半自動方式，藉由輸出裝置54之結果控制該表面電漿偵測系統2之條件因素。以本實施例所提供者，可將該鎖相放大器46透過GPIB連結至如波形顯示器之輸出裝置54，並配合如Labview之軟體控制程式讀取當改變該等條件因素下該鎖相放大器46所輸出鎖相信號之變化；然後，可依據鎖相信號之變化進一步以半自動之人工方式調變該等條件因素，或可藉由如資料擷取卡等轉換器將之轉換成調變訊號，透過自動控制方式連結該耦合裝置30或偵測單元40以精確調變該等條件因素，再由所調變之條件因素對應形成之另一鎖相信號回饋Labview，以反覆進行控制，使鎖相信號鎖定在最佳條件因素之輸出結果。It is worth mentioning that the control unit 50 can control the condition of the surface plasma detecting system 2 by the result of the output device 54 in a fully automatic or semi-automatic manner. In the embodiment, the lock-in amplifier 46 can be connected to the output device 54 such as a waveform display through the GPIB, and can be read by a software control program such as Labview. The lock-in amplifier 46 is changed when the conditions are changed. The change of the phase-locked signal is output; then, the conditional factors may be further modified in a semi-automatic manner according to the change of the phase-locked signal, or may be converted into a modulated signal by a converter such as a data capture card. The automatic control mode is connected to the coupling device 30 or the detecting unit 40 to precisely modulate the condition factors, and then the other phase-locked signal corresponding to the condition factor determined by the modulation is fed back to the Labview to repeatedly control the phase-locked signal. Lock the output of the best condition factor.
綜合上述可知，當光學組件20形成之第一及第二電磁波入射該耦合裝置30時，該控制單元50之信號產生器52先送出交流電壓訊號AC，使透過該電光晶體26改變任一尋常光或非尋常光所對應第一或第二電磁波之時變相位，故該偵測單元40所輸出之鎖相信號即為對應有時變相位差之干涉訊號，由該控制單元50之輸出裝置54可得如第六圖之干涉訊號的相位差φ曲線，或如第七圖之干涉訊號強度相較於入射光源22強度之光功率比R；因此，明顯可求得表面電漿共振條件下對應於第六圖之相位差φ曲線最大變化之現象發生時或第七圖之最小光功率比R之現象發生時；以本發明所例舉者，更可藉由取得第七圖之最小光功率比R所對應之稜鏡32入射角θ於表面電漿共振發生之共振角θr條件，於第六圖求得該共振角θr時不同偏振角度α對應之相位差φ曲線的斜率，產生如第八圖所示於不同分析器42偏振角度α對應之相位差φ變化率(dφ/dθ)，由該相位差φ變化率(dφ/dθ)具有不連續改變發生之偏振角度α時，亦即相位差φ曲線之最大變化率所對應之偏振角度α，則為該偵測單元40之分析器42於最佳干涉角之條件。In summary, when the first and second electromagnetic waves formed by the optical component 20 are incident on the coupling device 30, the signal generator 52 of the control unit 50 first sends an AC voltage signal AC to change any ordinary light through the electro-optic crystal 26. Or the time-varying phase of the first or second electromagnetic wave corresponding to the extraordinary light, so that the phase-locked signal output by the detecting unit 40 is an interference signal corresponding to the time-varying difference, and the output device 54 of the control unit 50 The phase difference φ curve of the interference signal as shown in the sixth figure, or the optical power ratio R of the intensity of the interference signal as compared with the intensity of the incident light source 22 as in the seventh figure; therefore, it is apparent that the surface plasma resonance condition can be obtained. When the phenomenon of the maximum change of the phase difference φ curve in the sixth figure occurs or the phenomenon of the minimum optical power ratio R of the seventh figure occurs, as exemplified by the present invention, the minimum optical power of the seventh figure can be obtained. The angle of incidence θr of the 稜鏡32 incident angle θ corresponding to R is the resonance angle θr of the surface plasma resonance, and the slope of the phase difference φ curve corresponding to the different polarization angle α when the resonance angle θr is obtained in the sixth figure is generated as described above. Eight maps The phase difference φ change rate (dφ/dθ) corresponding to the polarization angle α of the different analyzers 42 is a phase difference φ curve when the phase difference φ change rate (dφ/dθ) has a polarization angle α at which discontinuous change occurs. The polarization angle α corresponding to the maximum rate of change is the condition of the analyzer 42 of the detecting unit 40 at the optimal interference angle.
因此，本發明所提供該表面電漿偵測系統2可將該耦合裝置30之金屬層34接觸待測物，在鎖定該分析器42之偏振角度α於上述最佳干涉角下，即可維持該表面電漿偵測系統2具有可產生表面電漿波共振之最佳靈敏度；請參閱如第九圖所示，當表面電漿偵測系統2於特定偵測時間改變待測物之介電條件時，例如將接觸該金屬層34之環境介質由空氣改為氦氣，上述鎖定之最佳干涉角條件即可在該特定偵測時間對應發生最明顯的相位差φ變化。以下提供本發明之表面電漿偵測系統2所應用之表面電漿共振偵測方法：Therefore, the surface plasma detecting system 2 of the present invention can contact the metal layer 34 of the coupling device 30 to the object to be tested, and can maintain the polarization angle α of the analyzer 42 at the optimal interference angle. The surface plasma detecting system 2 has the best sensitivity for generating surface plasma wave resonance; see, as shown in FIG. 9 , when the surface plasma detecting system 2 changes the dielectric of the object to be tested at a specific detecting time. In the condition, for example, the environmental medium contacting the metal layer 34 is changed from air to helium, and the optimal interference angle condition of the lock can be changed correspondingly to the most significant phase difference φ at the specific detection time. The surface plasma resonance detecting method applied to the surface plasma detecting system 2 of the present invention is provided below:
a. 將耦合裝置30之光耦合器36設於旋轉台38上，使該稜鏡32之第一表面322垂直該旋轉台38；a. The optical coupler 36 of the coupling device 30 is disposed on the rotating table 38 such that the first surface 322 of the crucible 32 is perpendicular to the rotating table 38;
b. 提供入射光源22並改變為電場振動方向相互垂直之第一及第二電磁波，使第一及第二電磁波入射該稜鏡32之第二表面324，且於該稜鏡32內以入射角θ入射於該第一表面322，並自該稜鏡32之第三表面326分別以第一及第二反射波出射；b. providing the incident light source 22 and changing the first and second electromagnetic waves perpendicular to each other in the direction of the electric field vibration, such that the first and second electromagnetic waves are incident on the second surface 324 of the crucible 32, and the incident angle is within the crucible 32 θ is incident on the first surface 322 and exits from the third surface 326 of the crucible 32 with the first and second reflected waves, respectively;
c. 使該第一及第二反射波經過偵測單元40之分析器42，該分析器42之干涉光軸與該旋轉台38之平面夾特定偏振角度α，該第一及第二反射波通過該分析器42之干涉光軸後分別形成具有相同電場振動方向之第一及第二干涉光；c. passing the first and second reflected waves through the analyzer 42 of the detecting unit 40, the interference optical axis of the analyzer 42 and the plane of the rotating table 38 are sandwiched by a specific polarization angle α, the first and second reflected waves The first and second interference lights having the same electric field vibration direction are respectively formed by the interference optical axes of the analyzer 42;
d. 旋轉該旋轉台38以逐次改變該稜鏡32之入射角θ，提供交流電壓訊號AC以控制該第一及第二電磁波之相位差具有與該交流電壓訊號AC相同之時變頻率，藉由鎖相放大器46檢測該第一及第二干涉光所產生之干涉訊號之變化，可得干涉訊號強度相較於入射光源22強度之光功率比R，或該第一及第二干涉光之相位差φ之變化，並形成該第一及第二干涉光之相位差φ對應於不同入射角θ的相位差φ曲線；以及，d. rotating the rotating table 38 to sequentially change the incident angle θ of the crucible 32, and providing an alternating voltage signal AC to control the phase difference between the first and second electromagnetic waves to have the same time-varying frequency as the alternating current voltage AC. Detecting the change of the interference signal generated by the first and second interference lights by the lock-in amplifier 46, and obtaining the optical power ratio R of the intensity of the interference signal compared to the intensity of the incident light source 22, or the first and second interference light a change in the phase difference φ, and forming a phase difference φ curve of the phase difference φ of the first and second interference lights corresponding to different incident angles θ;
e. 改變該分析器42之干涉光軸於不同偏振角度α，並記錄該等偏振角度α下各該相位差φ曲線之變化率(dφ/dθ)，其中最大變化率所對應之偏振角度α及入射角θ分別為上述最佳干涉角及共振角θr，且所述共振角θr之條件可同時對應該第一及第二干涉光所產生之干涉訊號為最小強度，所述最佳干涉角條件可使該表面電漿偵測系統2產生具有最佳靈敏度之表面電漿共振效應。e. changing the interference optical axis of the analyzer 42 to different polarization angles α, and recording the rate of change (dφ/dθ) of the phase difference φ curve under the polarization angle α, wherein the polarization angle α corresponding to the maximum change rate And the incident angle θ is respectively the optimal interference angle and the resonance angle θr, and the condition of the resonance angle θr can simultaneously correspond to the interference signal generated by the first and second interference lights as the minimum intensity, the optimal interference angle Conditions allow the surface plasma detection system 2 to produce a surface plasma resonance effect with optimum sensitivity.
綜上所陳，本發明的表面電漿共振偵測方法及其應用之偵測系統，係以有效控制的調變因子提高表面電漿共振之偵測靈敏度，能讓廣泛的光電研究者方便進行實驗，有效應用在表面探測技術。In summary, the surface plasma resonance detecting method and the detecting system thereof are improved by the effective control of the modulation factor to improve the detection sensitivity of the surface plasma resonance, which is convenient for a wide range of photoelectric researchers. Experiments are effectively applied to surface detection techniques.
2．．．表面電漿偵測系統2. . . Surface plasma detection system
20．．．光學組件20. . . Optical component
22．．．入射光源twenty two. . . Incident light source
24．．．偏光器twenty four. . . Polarizer
26．．．電光晶體26. . . Electro-optic crystal
30．．．耦合裝置30. . . Coupling device
32．．．稜鏡32. . .稜鏡
322．．．第一表面322. . . First surface
324．．．第二表面324. . . Second surface
326．．．第三表面326. . . Third surface
34．．．金屬層34. . . Metal layer
36．．．光耦合器36. . . Optocoupler
38．．．旋轉台38. . . Rotary table
40．．．偵測單元40. . . Detection unit
42．．．分析器42. . . Analyzer
44．．．光偵測器44. . . Light detector
46．．．鎖相放大器46. . . Lock-in amplifier
50．．．控制單元50. . . control unit
52．．．信號產生器52. . . Signal generator
54．．．輸出裝置54. . . Output device
AC．．．交流電壓訊號AC. . . AC voltage signal
α．．．偏振角度α. . . Polarization angle
θ．．．入射角θ. . . Incident angle
θr．．．共振角Θr. . . Resonance angle
φ．．．相位差Φ. . . Phase difference
dφ/dθ．．．相位差變化率Dφ/dθ. . . Phase difference rate
R．．．光功率比R. . . Optical power ratio
第一圖為習用表面電漿共振探測技術之光耦合器；The first picture shows the optical coupler of the conventional surface plasma resonance detection technology;
第二圖為上述習用探測技術之靈敏度測定實驗，表示探測介面於不同金屬層厚度下干涉訊號之相位差對應於耦合裝置之稜鏡入射角的關係；The second figure is the sensitivity measurement experiment of the above conventional detection technology, which shows that the phase difference of the interference signal of the detection interface at different metal layer thicknesses corresponds to the incident angle of the coupling device;
第三圖為上述習用探測技術於表面電漿共振發生之共振角條件下所測得干涉訊號之相位差變化率，表示相位差曲線變化率對應於探測介面之不同金屬層厚度的關係；The third figure shows the phase difference change rate of the interference signal measured by the conventional detection technique under the resonance angle condition of the surface plasma resonance, and indicates that the phase difference curve change rate corresponds to the relationship of the thickness of different metal layers of the detection interface;
第四圖為本發明所提供最佳實施例之裝置示意圖；Figure 4 is a schematic view of the apparatus of the preferred embodiment of the present invention;
第五圖為上述最佳實施例所提供耦合裝置之上視圖；Figure 5 is a top plan view of the coupling device provided by the above preferred embodiment;
第六圖為上述最佳實施例所提供偵測單元於分析器不同偏振角度下，控制單元之輸出裝置所測得干涉訊號之相位差曲線，表示干涉訊號之相位差對應於耦合裝置之稜鏡入射角的關係；The sixth figure is the phase difference curve of the interfering signal measured by the output unit of the control unit under the different polarization angles of the analyzer according to the preferred embodiment, and the phase difference of the interfering signal corresponds to the coupling device. Relationship of incident angles;
第七圖為上述最佳實施例所提供偵測單元之分析器於不同偏振角度下，控制單元之輸出裝置所測得干涉訊號之訊號強度變化，表示干涉訊號與入射光源之光功率比對應於耦合裝置之稜鏡入射角的關係；The seventh figure is the signal intensity change of the interference signal measured by the output device of the control unit at different polarization angles of the analyzer of the detection unit provided by the above preferred embodiment, indicating that the optical power ratio of the interference signal to the incident light source corresponds to The relationship between the incident angles of the coupling devices;
第八圖為上述最佳實施例所提供耦合裝置於表面電漿共振發生之共振角條件下，控制單元之輸出裝置所測得干涉訊號之相位差變化率，表示相位差曲線變化率對應於分析器之偏振角度的關係；The eighth figure shows the phase difference change rate of the interference signal measured by the output device of the control unit under the resonance angle condition of the surface plasma resonance generated by the coupling device provided by the above preferred embodiment, indicating that the phase difference curve change rate corresponds to the analysis. The relationship of the polarization angle of the device;
第九圖為上述最佳實施例所提供偵測單元於分析器不同偏振角度下，控制單元之輸出裝置所測得耦合裝置之表面電漿共振現象，表示當耦合裝置之環境介質發生改變之偵測時間點對應於干涉訊號之相位差的變化關係。The ninth figure shows the surface plasma resonance phenomenon of the coupling device measured by the output unit of the control unit under the different polarization angles of the analyzer according to the above preferred embodiment, indicating that the environmental medium of the coupling device changes. The measurement time point corresponds to the change relationship of the phase difference of the interference signal.
2．．．表面電漿偵測系統2. . . Surface plasma detection system
20．．．光學組件20. . . Optical component
22．．．入射光源twenty two. . . Incident light source
24．．．偏光器twenty four. . . Polarizer
26．．．電光晶體26. . . Electro-optic crystal
30．．．耦合裝置30. . . Coupling device
32．．．稜鏡32. . .稜鏡
34．．．金屬層34. . . Metal layer
36．．．光耦合器36. . . Optocoupler
38．．．旋轉台38. . . Rotary table
40．．．偵測單元40. . . Detection unit
42．．．分析器42. . . Analyzer
44．．．光偵測器44. . . Light detector
46．．．鎖相放大器46. . . Lock-in amplifier
50．．．控制單元50. . . control unit
52．．．信號產生器52. . . Signal generator
54．．．輸出裝置54. . . Output device
AC．．．交流電壓訊號AC. . . AC voltage signal
α．．．偏振角度α. . . Polarization angle
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