CN108654668A - A kind of thin layer g-C3N4Preparation method - Google Patents

A kind of thin layer g-C3N4Preparation method Download PDF

Info

Publication number
CN108654668A
CN108654668A CN201810377550.3A CN201810377550A CN108654668A CN 108654668 A CN108654668 A CN 108654668A CN 201810377550 A CN201810377550 A CN 201810377550A CN 108654668 A CN108654668 A CN 108654668A
Authority
CN
China
Prior art keywords
thin layer
temperature
preparation
filter residue
solid powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810377550.3A
Other languages
Chinese (zh)
Inventor
江林
苏菲静
文鹏
梁志强
孙迎辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou University
Original Assignee
Suzhou University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou University filed Critical Suzhou University
Priority to CN201810377550.3A priority Critical patent/CN108654668A/en
Publication of CN108654668A publication Critical patent/CN108654668A/en
Pending legal-status Critical Current

Links

Classifications

    • B01J35/39
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J27/00Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
    • B01J27/24Nitrogen compounds
    • B01J35/61
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/08Heat treatment
    • B01J37/082Decomposition and pyrolysis
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/08Heat treatment
    • B01J37/10Heat treatment in the presence of water, e.g. steam

Abstract

The present invention relates to a kind of thin layer g C3N4Preparation method, it includes the following steps:(a) it is calcined at a temperature of nitrogenous precursor being placed in 400~650 DEG C, grinds to obtain solid powder;(b) solid powder, alkali piece and water are added into container, is transferred in reaction kettle, is reacted at a temperature of being placed in 80~150 DEG C, centrifuging and taking filter residue after ultrasound;The alkali piece is NaOH or KOH;(c) filter residue and water are added into another container, is transferred in reaction kettle, is reacted at a temperature of being placed in 80~150 DEG C, centrifuging and taking filter residue is freeze-dried after ultrasound.The thin layer g C that surface area is high, pattern is single can be obtained in this way3N4;And this method hydrothermal temperature is low, it is short to take, and effective approach is provided for photochemical catalyst.

Description

A kind of thin layer g-C3N4Preparation method
Technical field
The invention belongs to catalyst fields, are related to a kind of photochemical catalyst, and in particular to a kind of thin layer g-C3N4Preparation side Method.
Background technology
Sentence talk about " the furthest distance in the world it is not raw with it is dead, I leads your hand at Beijing crossing and but sees Less than your face ", the use of fossil energy not only brings the convenient prosperity with life to us, following also environment Pollution, and fossil energy belongs to the not renewable sources of energy, us is thus forced to seek the more clean energy.
Combustion of hydrogen releases a large amount of energy, and water, cleanliness without any pollution are generated after burning.The mode of production hydrogen mainly has at present Three kinds, respectively:The recombination of fossil energy regenerates, electro-catalysis and photocatalysis.But the recombination of fossil energy regeneration still can produce Raw CO2Equal gases do not solve air problem, and electro-catalysis can consume a large amount of energy, and photocatalysis is due to being to utilize sunlight And it attracts attention.Efficiency of selection is high, low energy consumption, and photochemical catalyst simple to operate then becomes people's urgent problem to be solved.
Since the electrode decomposing potential of water is 1.23eV, simultaneously because the presence of overpotential, the position of energy band of photochemical catalyst It should be greater than 1.8eV or more.g-C3N4It is the structure of a type graphite, is combined between layers with the effect of molecular force.In recent years g-C3N4Since it belongs to nonmetallic materials, energy gap is relatively low (2.7eV), can absorb the sunlight spectrum of wider range, And due to g-C3N4There is different degrees of defect on surface, which can be as the trap center of electrons and holes, to make electronics Compound the advantages that abundant active site is provided simultaneously is not easy to after being detached with hole and rather well received.
g-C3N4It is generally synthesized by heating polycondensation by cyanamide, melamine etc., as shown in Figure 1;But heating condensation polymerization At mostly be bulk g-C3N4(accumulate g-C3N4), the g-C of body phase3N4It is the g-C by single layer3N4It accumulates, due to Its is intermolecular to cause its surface area relatively low there are more serious sedimentation, only about 10m2/g;In fully decentralized state The g-C of lower single layer3N4Specific surface area be up to 2500m2/ g, it is clear that by bulk g-C3N4Stripping is the state tool of single layer or thin layer There is the meaning of reality.Current lift-off technology mainly has ultrasound stripping, the stripping of alkali metal ion intercalation and soda acid etching stripping The methods of, these method and steps are complicated, condition is harsh and cause with high costs.
Invention content
A kind of utilization thin layer g-C is provided the invention aims to overcome the deficiencies in the prior art3N4Preparation method.
In order to achieve the above objectives, the technical solution adopted by the present invention is:A kind of thin layer g-C3N4Preparation method, it includes Following steps:
(a) it is calcined at a temperature of nitrogenous precursor being placed in 400~650 DEG C, grinds to obtain solid powder;
(b) solid powder, alkali piece and water are added into container, is transferred in reaction kettle after ultrasound, is placed in 80~120 It is reacted at a temperature of DEG C, centrifuging and taking filter residue;The alkali piece is NaOH or KOH;
(c) filter residue and water are added into another container, is transferred in reaction kettle after ultrasound, is placed in 160~300 DEG C At a temperature of reacted, centrifuging and taking filter residue is freeze-dried.
Optimally, in step (a), the nitrogenous precursor is selected from cyanamide, dicyandiamide, melamine, thiocarbamide and urea The mixture of one or more compositions in element.
Optimally, in step (b), the mass ratio of the solid powder and the NaOH are 4~5:1.
Optimally, in step (b), residue washing to neutrality is then dried in vacuo.
Optimally, it in step (c), will be freeze-dried after residue washing to neutrality.
Since above-mentioned technical proposal is used, the present invention has following advantages compared with prior art:Thin layer g-C of the present invention3N4 Preparation method, by the way that the solid powder of nitrogenous precursor calcining gained is first pre-processed with alkali piece, then using hydro-thermal method It is removed, the thin layer g-C that surface area is high, pattern is single can be obtained in this way3N4;And this method hydrothermal temperature is low, time-consuming It is short, provide effective approach for photochemical catalyst.
Description of the drawings
Fig. 1 is that existing heating polycondensation synthesizes g-C3N4Flow chart;
Fig. 2 is the SEM figures of yellow solid in embodiment 1;
Fig. 3 is the SEM figures of step (b) product in embodiment 1;
Fig. 4 is thin layer g-C in embodiment 13N4SEM figure.
Fig. 5 is thin layer g-C in embodiment 13N4With bulk g-C3N4Catalytic performance comparison diagram.
Specific implementation mode
Thin layer g-C of the present invention3N4Preparation method, it includes the following steps:(a) nitrogenous precursor is placed in 400~650 It is calcined at a temperature of DEG C, grinds to obtain solid powder;(b) solid powder, alkali piece and water are added into container, after ultrasonic It is transferred in reaction kettle, is reacted at a temperature of being placed in 80~120 DEG C, centrifuging and taking filter residue;The alkali piece is NaOH or KOH; (c) be added the filter residue and water into another container, be transferred in reaction kettle after ultrasound, at a temperature of being placed in 160~300 DEG C into Row reaction, centrifuging and taking filter residue are freeze-dried.Solid powder elder generation as obtained by calcining nitrogenous precursor and alkali piece It is pre-processed, then is removed using hydro-thermal method, the thin layer g-C that surface area is high, pattern is single can be obtained in this way3N4;And This method hydrothermal temperature is low, it is short to take, and effective approach is provided for photochemical catalyst.
Above-mentioned nitrogenous precursor is one or more groups in cyanamide, dicyandiamide, melamine, thiocarbamide and urea element At mixture.In step (b), the mass ratio of the solid powder and the NaOH are 4~5:1.In step (b), by filter residue Washing is then dried in vacuo to neutrality.In step (c), it will be freeze-dried after residue washing to neutrality.
Below in conjunction with embodiment, invention is further explained.
Embodiment 1
The present embodiment provides a kind of thin layer g-C3N4Preparation method, it includes the following steps:
(a) poly cyanamid is put into the crucible of wash clean, is then put into (together with crucible) in Muffle furnace and carries out 550 DEG C of calcinings 3 hours (calcining in air, heating rate and rate of temperature fall are 3 DEG C/min);It is cooled to room temperature rear crucible, is ground with agate Alms bowl is fully ground, and obtained yellow solid (is bulk g-C3N4), the SEM figures of yellow solid are as shown in Figure 2;
(b) it is separately added into 0.5g yellow solids and 0.12gNaOH into the polyvinyl fluoride bottle of 50mL, 30mL deionizations are added Water is transferred in the reaction kettle of 50mL after ultrasonic 30min, is subsequently placed into baking oven and is heated 20h (temperature is 100 DEG C);It is to be heated After, it is centrifuged and sample (i.e. filter residue) is washed with deionized to neutrality, then do sample progress vacuum Dry (vacuum drying temperature is 40 DEG C), the sample (SEM figures are as shown in Figure 3) after drying are ground;
(c) product of 0.1g steps (b) is added into the polyvinyl fluoride bottle of 50mL, 30mL deionized waters, ultrasound is added It is transferred in the reaction kettle of 50mL after 30min, is subsequently placed into baking oven and heats 6h (temperature is 200 DEG C);After to be heated, into Row centrifuges and sample (i.e. filter residue) is washed with deionized to neutrality, then carries out the sample (SEM schemes as shown in Figure 4) Freeze-drying.Bulk g-C as can be seen from Figure 23N4Surface is more coarse, and presentation is blocky and thicker, therefore can influence Extinction causes performance bad;Fig. 3 schemes for pretreated SEM, and pattern has no too big difference with before pretreatment;Fig. 4 is G-C after being removed3N4SEM figure, the g-C after as can be seen from the figure being removed3N4Surface roughness becomes smaller, and is thin Layer compares bulk g-C3N4Specific surface area obviously greatly, therefore to participate in that light-catalysed area is also bigger, and performance is just also better; Fig. 5 is catalytic performance comparison diagram, it is known from figures that bulk g-C3N4H2-producing capacity be 280 μm of ol/g/h, after stripping g-C3N4For 750 μm of ol/g/h.G-C after stripping3N4Obviously than bulk g-C3N4Nearly three times are higher by, this is because after stripping g-C3N4Photo absorption performance enhances, and participates in the increased reason of specific surface area of production hydrogen, matches with the SEM of the foregoing description.
Embodiment 2
The present embodiment provides a kind of thin layer g-C3N4Preparation method, it with it is almost the same in embodiment 1, unlike: In step (b), the temperature of baking oven is 80 DEG C;In step (c), the temperature of baking oven is 160 DEG C.
Embodiment 3
The present embodiment provides a kind of thin layer g-C3N4Preparation method, it with it is almost the same in embodiment 1, unlike: In step (b), the temperature of baking oven is 120 DEG C;In step (c), the temperature of baking oven is 300 DEG C.
Embodiment 4
The present embodiment provides a kind of thin layer g-C3N4Preparation method, it with it is almost the same in embodiment 1, unlike: In step (b), the mass ratio of yellow solid and NaOH are 4:1.
Embodiment 5
The present embodiment provides a kind of thin layer g-C3N4Preparation method, it with it is almost the same in embodiment 1, unlike: In step (b), the mass ratio of yellow solid and NaOH are 5:1.
Comparative example 1
The present embodiment provides a kind of thin layer g-C3N4Preparation method, it with it is almost the same in embodiment 1, unlike, Step (b) is not carried out.
Comparative example 2
The present embodiment provides a kind of thin layer g-C3N4Preparation method, it with it is almost the same in embodiment 1, unlike: In step (b), NaOH 0.5g are excessive.
It is mainly that temperature is different, and temperature is than in embodiment 1 in embodiment 2 in embodiment 1, embodiment 2 and embodiment 3 Low, temperature is relatively low to cause pretreatment to be not enough with stripping, cause the specific area of g-C3N4 relatively low, light-catalysed to make Activity reduces;And temperature drift can cause the structure of g-C3N4 that it is bad to also result in photocatalysis performance by destruction.Embodiment 1, it is mainly that base amount is different, and the base amount in embodiment 4 is than big in embodiment 1, alkali in embodiment 4 and embodiment 5 Dosage can excessively cause g-C3N4 to be destroyed to the structure of g-C3N4 in stripping, therefore can also influence light-catalysed performance. Base amount in embodiment 5 is on the low side, and the reduction of base amount can lead to g-C3N4It removes not complete enough, participates in the area meeting of reaction It reduces, to which photocatalysis performance is bad.It is not pre-processed in comparative example 1, leads to g-C3N4Molecular force between layers compared with Greatly, must almost arrive thin layer g-C3N4;Base amount in comparative example 2 is excessive, destroys g-C3N4Structure, lead to photocatalysis Performance drastically decline and requirement be not achieved.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all according to the present invention Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.

Claims (5)

1. a kind of thin layer g-C3N4Preparation method, which is characterized in that it includes the following steps:
(a) it is calcined at a temperature of nitrogenous precursor being placed in 400~650 DEG C, grinds to obtain solid powder;
(b) solid powder, alkali piece and water are added into container, is transferred in reaction kettle after ultrasound, is placed in 80~120 DEG C At a temperature of reacted, centrifuging and taking filter residue;The alkali piece is NaOH or KOH;
(c) filter residue and water are added into another container, is transferred in reaction kettle after ultrasound, is placed in 160~300 DEG C of temperature Under reacted, centrifuging and taking filter residue is freeze-dried.
2. the preparation method of thin layer g-C3N4 according to claim 1, it is characterised in that:In step (a), it is described it is nitrogenous before Drive the mixture that body is one or more compositions in cyanamide, dicyandiamide, melamine, thiocarbamide and urea element.
3. the preparation method of thin layer g-C3N4 according to claim 1, it is characterised in that:In step (b), the solid powder The mass ratio of the last and described NaOH is 4~5:1.
4. the preparation method of thin layer g-C3N4 according to claim 1, it is characterised in that:In step (b), by residue washing To neutrality, then it is dried in vacuo.
5. the preparation method of thin layer g-C3N4 according to claim 1, it is characterised in that:In step (c), by residue washing It is freeze-dried after to neutrality.
CN201810377550.3A 2018-04-25 2018-04-25 A kind of thin layer g-C3N4Preparation method Pending CN108654668A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810377550.3A CN108654668A (en) 2018-04-25 2018-04-25 A kind of thin layer g-C3N4Preparation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810377550.3A CN108654668A (en) 2018-04-25 2018-04-25 A kind of thin layer g-C3N4Preparation method

Publications (1)

Publication Number Publication Date
CN108654668A true CN108654668A (en) 2018-10-16

Family

ID=63780986

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810377550.3A Pending CN108654668A (en) 2018-04-25 2018-04-25 A kind of thin layer g-C3N4Preparation method

Country Status (1)

Country Link
CN (1) CN108654668A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110980665A (en) * 2019-11-29 2020-04-10 平顶山学院 Preparation method of two-dimensional thin-layer structure carbon nitride

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104944392A (en) * 2014-03-25 2015-09-30 中国科学院大连化学物理研究所 Mass preparation method of graphite-phase carbon nitride nanosheets
CN105692573A (en) * 2016-03-29 2016-06-22 中国人民解放军国防科学技术大学 Preparation method of nano-structure carbon nitride

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104944392A (en) * 2014-03-25 2015-09-30 中国科学院大连化学物理研究所 Mass preparation method of graphite-phase carbon nitride nanosheets
CN105692573A (en) * 2016-03-29 2016-06-22 中国人民解放军国防科学技术大学 Preparation method of nano-structure carbon nitride

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GENGNAN LI等: "Alkali-assisted mild aqueous exfoliation for single-layered and structure-preserved graphitic carbon nitride nanosheets", 《JOURNAL OF COLLOID AND INTERFACE SCIENCE》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110980665A (en) * 2019-11-29 2020-04-10 平顶山学院 Preparation method of two-dimensional thin-layer structure carbon nitride

Similar Documents

Publication Publication Date Title
CN103785434A (en) g-C3N4 nanosheet/CdS composite visible-light-driven photocatalyst
CN106076365B (en) A kind of composite photo-catalyst promoting photodissociation aquatic products hydrogen
CN109261194B (en) Large-area Z-shaped heterojunction porous carbon nitride/cadmium selenide composite photocatalyst and preparation method thereof
CN109985666B (en) Surface modified MoS2Application of catalyst in piezoelectric catalytic hydrogen production
CN107185580B (en) g-C3N4/ZnO nanosheet multilevel heterostructure photocatalyst
CN110124723A (en) ZnO/g-C3N4Composite photo-catalyst and its preparation method and application
CN111040254A (en) Cellulose-based photothermal conversion gel material and preparation method thereof
CN103861618A (en) Preparation method for SnO2-based composite visible light photocatalyst
CN113293014A (en) Negative carbon emission biomass pyrolytic carbon hydrogen-electricity poly-generation method and device
CN106582663A (en) Method for in situ catalytic removal of tar in biomass pyrolysis process
CN110433847B (en) Two-dimensional composite photocatalyst h-BN/Ti3C2/TiO2And preparation method and application thereof
CN110422843A (en) A kind of environment-friendly preparation method thereof of the biomass-based active carbon material of nitrogen boron codope and its application
CN102386383B (en) Lithium battery hard carbon microsphere cathode material with core-shell structure and preparation method thereof
CN104277219A (en) Photocatalytic material polyimide, as well as preparation method and applications thereof
CN108557892A (en) A kind of oxide preparation method and application for the manganese that object is mutually controllable
CN112420402A (en) Nitrogen-doped biochar, preparation method and application thereof, electrode and preparation method
CN109078648A (en) A kind of preparation method of three-dimensional grapheme/nickel/graphite phase carbon nitride composite photocatalyst material
CN115414955A (en) Black phosphorus/high-crystallinity carbon nitride composite photocatalyst, and preparation method and application thereof
CN113042071A (en) Monoatomic Pd modified CdS nano-catalyst and preparation method thereof
CN109225265A (en) A kind of preparation method of all solid state Z-type heterojunction photocatalyst
CN112316969A (en) N-doped TiO2Hollow microsphere-BiOBr photocatalytic degradation material and preparation method thereof
CN110813347B (en) Molecular doping modified graphite phase carbon nitride photocatalyst with three-dimensional loose structure and preparation method and application thereof
CN108654668A (en) A kind of thin layer g-C3N4Preparation method
CN103730668A (en) Pt/C catalyst of fuel cell and preparation technology thereof
CN115007208A (en) Preparation method and application of graphene/cellulose aerogel-based composite photocatalyst

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20181016

RJ01 Rejection of invention patent application after publication