CN108597730A - Chip electronic component and its manufacturing method - Google Patents
Chip electronic component and its manufacturing method Download PDFInfo
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- CN108597730A CN108597730A CN201810343474.4A CN201810343474A CN108597730A CN 108597730 A CN108597730 A CN 108597730A CN 201810343474 A CN201810343474 A CN 201810343474A CN 108597730 A CN108597730 A CN 108597730A
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- Prior art keywords
- insulating film
- conductive pattern
- electronic component
- coil conductive
- chip electronic
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000009413 insulation Methods 0.000 claims description 34
- 229920000642 polymer Polymers 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 230000003746 surface roughness Effects 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000003486 chemical etching Methods 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000000696 magnetic material Substances 0.000 abstract description 21
- 230000007547 defect Effects 0.000 abstract description 18
- 239000010408 film Substances 0.000 description 135
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 229910000859 α-Fe Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 239000010949 copper Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001802 infusion Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 241000345998 Calamus manan Species 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000013034 phenoxy resin Substances 0.000 description 2
- 229920006287 phenoxy resin Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920002492 poly(sulfone) Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- 235000012950 rattan cane Nutrition 0.000 description 2
- 239000011378 shotcrete Substances 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910018605 Ni—Zn Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910007565 Zn—Cu Inorganic materials 0.000 description 1
- 239000011469 building brick Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
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- 239000005300 metallic glass Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
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- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0013—Printed inductances with stacked layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2866—Combination of wires and sheets
Abstract
It provides a kind of chip electronic component and its manufacturing method, the chip electronic component includes：Magnetic body has the coil conductive pattern being embedded；Oxide insulating film is formed on the surface of coil conductive pattern.Even if the insulating film be formed as than insulating film is thin according to prior art in the case of, be exposed prevented also from coil conductive pattern, thus magnetic material and coil conductive pattern can not contact each other.It is therefore possible to prevent waveform defect in high frequency.
Description
The application be the applying date be on October 22nd, 2014, application No. is 201410566473.8, entitled " chips
The divisional application of the application for a patent for invention of electronic building brick and its manufacturing method ".
Technical field
This disclosure relates to a kind of chip electronic component and a kind of method manufacturing the chip electronic component.
Background technology
Inductor as chip electronic component is to be formed together with resistors and capacitors electronic circuit to remove noise
Representative passive element.
By being formed coil conductive pattern by plating technic and being stacked, suppress and harden by the mixed of Magnaglo and resin
The magnetic material sheets being that object is formed is closed to manufacture thin film inductor.
Here, the contact between coil conductive pattern and magnetic material in order to prevent, in the table of coil conductive pattern
Insulating film is formed on face.
Invention content
Exemplary embodiment can provide including it is thinner than insulating film according to prior art and can be effectively prevented with it is magnetic
The chip electronic component and its manufacturing method of the insulating film of the contact of material.
A kind of chip electronic component is provided according to an exemplary embodiment of the present disclosure, and the chip electronic component includes：Magnetic
Property main body, wherein being embedded with coil conductive pattern；Oxide insulating film is arranged on the surface of coil conductive pattern；With
And polymer insulation film, coat oxide insulating film, wherein oxide insulating film is thick with about 0.6 μm to about 0.8 μm of surface
Rugosity Ra, and wherein, oxide insulating film has about 0.5 μm to about 2.5 μm of thickness.
A kind of chip electronic component is provided according to an exemplary embodiment of the present disclosure, and the chip electronic component includes：Magnetic
Property main body, including insulating substrate；Coil conductive pattern is arranged at least one surface of insulating substrate；First insulating film,
It is arranged on the surface of coil conductive pattern；And second insulating film, coat the first insulating film, wherein the first insulating film has
There is about 0.6 μm to about 0.8 μm of surface roughness Ra, and wherein, the first insulating film has about 0.5 μm to about 2.5 μm of thickness
Degree.
Accoding to exemplary embodiment, it is possible to provide there is the oxide insulating film being formed on the surface of coil conductive pattern
Chip electronic component, wherein oxide insulating film is by including the metal of at least one metal for forming coil conductive pattern
Oxide is formed.
Description of the drawings
In terms of the above and other of the disclosure by the detailed description carried out below in conjunction with the accompanying drawings, will be more clearly understood,
Feature and advantage, in the accompanying drawings：
Fig. 1 is the perspective illustration of the chip electronic component with coil conductive pattern accoding to exemplary embodiment；
Fig. 2 is the sectional view of the line I-I' interceptions along Fig. 1；
Fig. 3 is the exemplary enlarged diagram of the part A of Fig. 2；
Fig. 4 is sectional view of the chip electronic component on the direction length-thickness (L-T) accoding to exemplary embodiment；
Fig. 5 is the exemplary enlarged diagram of the part B of Fig. 4；
Fig. 6 is the exemplary enlarged diagram of the part C of Fig. 5；
Fig. 7 is the exemplary enlarged diagram of the part A of Fig. 2；
Fig. 8 is the exemplary enlarged diagram of the part B of Fig. 4；
Fig. 9 is the coil conductive pattern for being formed with insulating film thereon in chip electronic component accoding to exemplary embodiment
Magnified sweep electron microscope (SEM) photo of the part in portion；And
Figure 10 is the flow chart for the method for showing manufacture chip electronic component accoding to exemplary embodiment.
Specific implementation mode
Exemplary embodiment is described in detail now with reference to attached drawing.
However, the disclosure can be illustrated and be should not be construed as being limited to herein in many different forms
The specific embodiment illustrated.On the contrary, these embodiments are provided so that the disclosure will be thorough and complete, and will be to ability
Field technique personnel fully communicate the scope of the present disclosure.
In the accompanying drawings, for the sake of clarity, the shape and size of element can be exaggerated, and identical reference numeral will always
It is used to indicate same or analogous element.
Hereinafter, the chip electronic component of description accoding to exemplary embodiment specifically will be described thin film inductor.So
And the invention is not limited thereto.
Fig. 1 is the perspective illustration of the chip electronic component with coil conductive pattern accoding to exemplary embodiment；
Fig. 2 is the sectional view of the line I-I' interceptions along Fig. 1.
Referring to Figures 1 and 2, it as the example of chip electronic component, discloses and uses in the power cord of power circuit
Thin film inductor 100.
Thin film inductor 100 accoding to exemplary embodiment may include the line in magnetic body 50, embedded magnetic body 50
It encloses conductive pattern portion 42 and 44 and is formed on the outer surface of magnetic body 50 and is connected to coil conductive pattern 42 and 44
External electrode 80.
Magnetic body 50 can form the appearance of thin film inductor 100 and can be formed by showing magnetic any material.Example
Such as, magnetic body 50 can be formed by filling ferrite or metal-based soft magnetic material.
Ferrite may include such as Mn-Zn based ferrites, Ni-Zn based ferrites, Ni-Zn-Cu based ferrites, Mn-Mg bases
The ferrite known in the art of ferrite, Ba based ferrites, Li based ferrites etc..
Metal-based soft magnetic material can be to include at least one conjunction selected from the group being made of Fe, Si, Cr, Al and Ni
Gold.For example, metal-based soft magnetic material may include Fe-Si-B-Cr base amorphous metal particles, but not limited to this.
Metal-based soft magnetic material may have about 0.1 μm to about 30 μm of particle size, and be dispersed in such as epoxy
In the polymer of resin, polyimides etc..
Magnetic body 50 can have hexahedral shape.In order to clearly define exemplary embodiments, it will define hexahedral
Direction.L, W and T shown in FIG. 1 indicate respectively length direction, width direction and thickness direction.
The insulating substrate 23 being formed in magnetic body 50 can be such as polypropylene glycol (PPG) substrate, ferrite substrate, gold
Belong to base soft magnetism substrate etc..
Insulating substrate 23 can be with the through-hole in center portion formed therein point, wherein such as ferrite, metal can be used in the hole
The same material of base soft magnetic materials etc. is to form core 55.It can increase inductance L with the core 55 of same material.
Insulating substrate 23 can have 42 He of coil conductive pattern being respectively formed in one surface and another surface
44, wherein coil conductive pattern 42 and 44 has the pattern of coil shape.
Coil conductive pattern 42 and 44 may include thering is spiral coil pattern, be respectively formed at insulating substrate 23
Coil conductive pattern 42 and 44 on one surface and another surface can pass through electrode by being formed in insulating substrate 23
46 are electrically connected to each other.
It coil conductive pattern 42 and 44 and can be formed by the metal with excellent conductivity by electrode 46, for example,
It can be formed by silver-colored (Ag), palladium (pd), aluminium (Al), nickel (Ni), titanium (Ti), golden (Au), copper (Cu), platinum (Pt) or their alloy.
Fig. 3 is the exemplary enlarged diagram of the part A of Fig. 2.
With reference to Fig. 3, coil conductive pattern 42 and 44 can have the oxide insulating film 31 formed on the surface thereof.
The surface usable polymers material of coil conductive pattern is applied coated with formation insulating film.However, reducing institute as above
There can be limitation in terms of the thickness of the insulating film formed with stating.For example, reducing the thickness of insulating film to form thin insulating film
In the case of, coil conductive pattern can be partially exposed.When coil conductive pattern is exposed, leakage current will produce.
Therefore, although inductance is normal at 1MHz, inductance can quickly reduce in high frequency, lead to waveform defect.
Therefore, in the exemplary embodiment, the oxide insulating film 31 formed by metal oxide may be formed at coil and lead
On the surface in electrical pattern portion 42 and 44, it may be not present to being formed uniformly thin insulating film and do not form the portion of insulating film
Point.
Oxide insulating film 31 can be by with the gold included at least one of coil conductive pattern 42 and 44 metal
Belong to oxide to be formed.It can be by making coil conductive pattern 42 and 44 aoxidize or be lost by chemistry in high temperature or high humidity environment
The oxidation of coil conductive pattern 42 and 44 is set to form oxide insulating film 31 at quarter.
The surface roughness Ra of oxide insulating film 31 may be about 0.6 μm to about 0.8 μm.
When forming oxide insulating film 31 by chemical etching etc., the surface roughness Ra of oxide insulating film 31 can increase
Greatly to about 0.6 μm to about 0.8 μm.Surface area increases due to increased surface roughness Ra, and oxidation thus can be improved
Interface adhesion between object insulating film 31 and the second insulating film being formed on oxide insulating film 31 and certifiable reliability.
Oxide insulating film 31 can be with the variously-shaped of acicular texture, rattan structure etc..
Oxide insulating film 31 may be formed to have about 0.5 μm to about 2.5 μm of thickness.
In the case where the thickness of oxide insulating film 31 is less than about 0.5 μm, oxide insulating film is likely to be broken, and is led
The appearance for the waveform defect that the generation of cause leakage current and inductance reduce in high frequency.It is more than in the thickness of oxide insulating film 31
In the case of about 2.5 μm, inductance characteristic may deteriorate.
Fig. 4 is sectional view of the chip electronic component on the direction length-thickness (L-T) accoding to exemplary embodiment；Fig. 5
It is the exemplary enlarged diagram of the part B of Fig. 4.
With reference to Fig. 4 and Fig. 5, it is formed with the adjacent patterns of the coil conductive pattern 42 and 44 of oxide insulating film 31 thereon
Between region can use same material.
Due to oxide insulating film 31 can while corresponding with the shape of coil conductive pattern 42 and 44 surface shape
As apparent thin, therefore space can be formed in the region between adjacent patterns.The space can use same material, so as to
Increase the volume of magnetic material, therefore, inductance can be increased by increasing the volume of magnetic material.
Fig. 6 is the exemplary enlarged diagram of the part C of Fig. 5.
With reference to Fig. 6, it is formed in the average thickness of the oxide insulating film 31 ' on the upper surface of coil conductive pattern 42 and 44
Degree can be than the oxide insulating film 31 that is formed on the side surface of coil conductive pattern 42 and 44 " average thickness it is thick.
The upper surface of coil conductive pattern 42 and 44 can refer to the upper surface of the coil pattern based on dotted line A and B, coil
The side surface in conductive pattern portion 42 and 44 can refer to the side surface of the coil pattern based on dotted line A and B, wherein dotted line A and B from
Extend at the edge for defining the coil pattern of the width w of coil pattern.
Due to being formed in the oxide insulating film 31 ' on the upper surface of coil conductive pattern 42 and 44 in the magnetic material of compacting
With respect to easily being influenced by external force during tablet etc., therefore the thickness of oxide insulating film 31 ' is than being formed in coil conduction
Oxide insulating film 31 on the side surface of drafting department 42 and 44 " thickness it is thick, to thereby guarantee that insulation performance.
In addition, caused in order to prevent due to the increase of the thickness of oxide insulating film the area of coil pattern reduction and
The increase of direct current (DC) resistance (Rdc), be formed on the side surface of coil conductive pattern 42 and 44 with relatively little easily by outer
The oxide insulating film 31 that power influences " is formed as the oxide than being formed on the upper surface of coil conductive pattern 42 and 44
Insulating film 31 ' is thin.
That is, the average thickness ratio for the oxide insulating film 31 ' being formed on the upper surface of coil conductive pattern 42 and 44
The oxide insulating film 31 that is formed on the side surface of coil conductive pattern 42 and 44 " average thickness it is thick, therefore, it is ensured that
Excellent insulation performance and DC resistance (Rdc) can be reduced.
The thickness for the oxide insulating film 31 ' being formed on the upper surface of coil conductive pattern 42 and 44 may be about
1.8 μm to about 2.5 μm.
In the case where the thickness of oxide insulating film 31 ' is less than about 1.8 μm, oxide insulating film is likely to be broken,
Lead to the generation of leakage current and the appearance of waveform defect that inductance reduces in high frequency.It is super in the thickness of oxide insulating film 31 '
In the case of crossing about 2.5 μm, inductance characteristic may deteriorate.
The oxide insulating film 31 that is formed on the side surface of coil conductive pattern 42 and 44 " thickness may be about
0.8 μm to about 1.8 μm.
In oxide insulating film 31 " thickness in the case of be less than about 0.8 μm, it is possible to create leakage current and may go out
The waveform defect that existing inductance reduces in high frequency.In oxide insulating film 31 " thickness in the case of be more than about 1.8 μm, line
The area of circular pattern can reduce, and lead to the increase of DC resistance (Rdc).
In addition, the rough surface for the oxide insulating film 31 ' being formed on the upper surface of coil conductive pattern 42 and 44
Degree Ra, which can be more than, is formed in oxide insulating film 31 on the side surface of coil conductive pattern 42 and 44 " surface roughness.
Fig. 7 is the exemplary enlarged diagram of the part A of Fig. 2；Fig. 8 is the exemplary enlarged diagram of the part B of Fig. 4.
With reference to Fig. 7, polymer insulation film 32 is formed as coating oxide insulating film 31.
The side of silk screen print method, exposure and development, gunite, the infusion process of photoresist (PR) etc. can be passed through
Method forms polymer insulation film 32.
Polymer insulation film 32 can be formed by any material that can form thin insulating film on oxide insulating film 31,
For example, can be by formation such as epoxylite, polyimide resin, phenoxy resin, polysulfone resin, polycarbonate resins.
Polymer insulation film 32 may be formed to have about 1 μm to about 3 μm of thickness.
In the case where the thickness of polymer insulation film 32 is less than about 1 μm, polymer insulation film is likely to be broken, to
There may be leakage current and it is likely to occur the circuit defect of inductance between the reduced waveform defects or coil patterns at high frequencies.
In the case where the thickness of polymer insulation film 32 is more than about 3 μm, inductance characteristic may deteriorate.
Average thickness ratio between oxide insulating film 31 and polymer insulation film 32 may be about 1:1.2 to about 1:3.
It is above-mentioned average thick to meet by forming oxide insulating film 31 and double insulating film structures of polymer insulation film 32
Ratio is spent, the generation of leakage current can be prevented and waveform defect and circuit defect can be reduced, and by the way that insulating film is formed as thin,
It can guarantee excellent inductance characteristic.
With reference to Fig. 8, the shape on the surface of polymer insulation film 32 is formed as the table with coil conductive pattern 42 and 44
The shape in face corresponds to.
This means that polymer insulation film 32 is thinly coated on the surface of coil conductive pattern 42 and 44, such as Fig. 8
It is shown.
When the surface of polymer insulation film 32 is while corresponding with the shape of coil conductive pattern 42 and 44 surface
When being formed as thin, space can be formed in the region between coil pattern.The space can use same material, so as to increase
Therefore the volume of big magnetic material can increase inductance by increasing the volume of magnetic material.
Fig. 9 is the coil conductive pattern for being formed with insulating film thereon in chip electronic component accoding to exemplary embodiment
Magnified sweep electron microscope (SEM) photo of the part in portion.
With reference to Fig. 9, it can be appreciated that the oxide insulating film 31 as the first insulating film is by making coil conductive pattern
The surface oxidation in portion 42 and be formed on the surface of coil conductive pattern 42, the polymer insulation film 32 as the second insulating film
It is formed on oxide insulating film 31.
By forming insulating film to have double-layer structure as described above, even if in the case where insulating film is formed as thin,
Prevented also from the contact between coil conductive pattern and magnetic material 50 ' and waveform defect and circuit defect can be reduced.
The end for the coil conductive pattern 42 being formed on a surface of insulating substrate 23 can be exposed to magnetic body
50 in its longitudinal direction end surfaces, the coil conductive pattern 44 being formed on another surface of insulating substrate 23
End can be exposed to another end surfaces in its longitudinal direction of magnetic body 50.
External electrode 80 may be formed in its longitudinal direction two end surfaces of magnetic body 50, to be connected respectively to
It is exposed to the coil conductive pattern 42 and 44 of in its longitudinal direction two end surfaces of magnetic body 50.
External electrode 80 can be formed by the metal with excellent conductivity, for example, can be by nickel (Ni), copper (Cu), tin (Sn), silver
(Ag) or the formation such as their alloy.
Figure 10 is the flow chart for the method for showing manufacture chip electronic component accoding to exemplary embodiment.
Referring to Fig.1 0, coil conductive pattern 42 and 44 can be formed on insulating substrate 23.
Insulating substrate 23 is not particularly restricted, but can be such as printed circuit board (PCB), ferrite substrate, Metal Substrate
Soft magnetism substrate etc., and may have about 40 μm to about 100 μm of thickness.
The method for forming coil conductive pattern 42 and 44 can be such as galvanoplastic, but not limited to this.
Coil conductive pattern 42 and 44 can be formed by the metal with excellent conductivity, for example, can be by silver-colored (Ag), palladium
(pd), aluminium (Al), nickel (Ni), titanium (Ti), golden (Au), copper (Cu), platinum (Pt) or their alloy are formed.
Hole can be formed in a part for insulating substrate 23, and available conductive material fills the hole and passes through electrode to be formed
46, it can be by making the coil conductive pattern being respectively formed on the surface and another surface of insulating substrate 23 by electrode 46
Case portion 42 and 44 is electrically connected to each other.
Drilling, laser processing, sandblasting, punching etc. can be executed to the central part of insulating substrate 23 and penetrate insulation base to be formed
The hole of plate 23.
Then, oxide insulating film 31 can be formed on the surface of coil conductive pattern 42 and 44.
It can be exhausted to form oxide by making to aoxidize included at least one of coil conductive pattern 42 and 44 metal
Velum 31.
Do not had by the method for making the surface oxidation of coil conductive pattern 42 and 44 to form oxide insulating film 31
Body limits.For example, can be by making coil conductive pattern 42 and 44 aoxidize or be lost by chemistry in high temperature or high humidity environment
The oxidation of coil conductive pattern 42 and 44 is set to form oxide insulating film 31 at quarter.
In the case of forming oxide insulating film 31, the surface of oxide insulating film 31 can be improved by chemical etching
Roughness Ra.
The surface roughness Ra of oxide insulating film 31 may be about 0.6 μm to about 0.8 μm.
When forming oxide insulating film 31 by chemical etching etc., the surface roughness Ra of oxide insulating film 31 can increase
Greatly to about 0.6 μm to about 0.8 μm.When surface area increases due to increased surface roughness Ra, thus can be improved
Interface adhesion between oxide insulating film 31 and the second insulating film being formed on oxide insulating film 31 and can guarantee can
By property.
Oxide insulating film 31 can be with the variously-shaped of acicular texture, rattan structure etc..
The feelings of oxide insulating film 31 are being formed by making the oxidation of coil conductive pattern 42 and 44 under high temperature environment
Under condition, the cleaning effect between coil conductive pattern 42 and 44 coil pattern can be splendid.
Oxide insulating film 31 can be formed to have to about 0.5 μm to about 2.5 μm of thickness.
In the case where the thickness of oxide insulating film 31 is less than about 0.5 μm, oxide insulating film is likely to be broken, and is led
The appearance for the waveform defect that the generation of cause leakage current and inductance reduce in high frequency.It is more than big in the thickness of oxide insulating film 31
In the case of about 2.5 μm, inductance characteristic may deteriorate.
When forming oxide insulating film 31, it is next that controllable oxide layer forms concentration, oxidizing temperature, time of solution etc.
Adjust the thickness of oxide insulating film 31.
The average thickness of the oxide insulating film 31 ' on the upper surface of coil conductive pattern 42 and 44 is formed in than shape
At the oxide insulating film 31 on the side surface of coil conductive pattern 42 and 44 " average thickness it is thick.
The average thickness ratio for the oxide insulating film 31 ' being formed on the upper surface of coil conductive pattern 42 and 44 is formed
Oxide insulating film 31 on the side surface of coil conductive pattern 42 and 44 " average thickness it is thick, it is excellent to can guarantee
Insulation performance and DC resistance (Rdc) can be reduced.
The thickness for the oxide insulating film 31 ' being formed on the upper surface of coil conductive pattern 42 and 44 may be about
1.8 μm to about 2.5 μm.
In the case where the thickness of oxide insulating film 31 ' is less than about 1.8 μm, oxide insulating film is likely to be broken,
Lead to the generation of leakage current and the appearance of waveform defect that inductance reduces in high frequency.It is super in the thickness of oxide insulating film 31 '
In the case of crossing about 2.5 μm, inductance characteristic may deteriorate.
The oxide insulating film 31 that is formed on the side surface of coil conductive pattern 42 and 44 " thickness may be about
0.8 μm to about 1.8 μm.
In oxide insulating film 31 " thickness in the case of be less than about 0.8 μm, it is possible to create leakage current and may go out
The waveform defect that existing inductance reduces in high frequency.In oxide insulating film 31 " thickness in the case of be more than about 1.8 μm, line
The area of circular pattern can reduce, and lead to the increase of DC resistance (Rdc).
Then, polymer insulation film 32 can be formed as coating oxide insulating film 31.
The sheet of silk screen print method, exposure and development, gunite, the infusion process of photoresist (PR) etc. can be passed through
Method well known to field forms polymer insulation film 32.
Polymer insulation film 32 can be formed by any material that can form thin insulating film on oxide insulating film 31,
For example, can be by photoresist (PR), epoxy, polyimide resin, phenoxy resin, polysulfone resin, poly- carbonic acid
The formation such as ester resin.
Polymer insulation film 32 can be formed to have to about 1 μm to about 3 μm of thickness.
In the case where the thickness of polymer insulation film 32 is less than about 1 μm, polymer insulation film is likely to be broken, to
There may be leakage current and it is likely to occur the circuit defect of inductance between the reduced waveform defects or coil patterns at high frequencies.
In the case where the thickness of polymer insulation film 32 is more than about 3 μm, inductance characteristic may deteriorate.
It can be by the shape being shaped so as to the surface of coil conductive pattern 42 and 44 on the surface of polymer insulation film 32
Shape corresponds to.
The method for forming polymer insulation film 32 is not particularly restricted, as long as can polymer insulation film 32 be formed as film
It is corresponding with the shape on the surface of coil conductive pattern 42 and 44 simultaneously.For example, chemical vapor deposition (CVD) method can be passed through
Or form polymer insulation film 32 using the infusion process of low viscosity polymer coating solution.
When the surface of polymer insulation film 32 is while corresponding with the shape of coil conductive pattern 42 and 44 surface
When being formed as thin, space can be formed in the region between coil pattern.The same material space can be used, so as to increase
Therefore the volume of big magnetic material can increase inductance by increasing the volume of magnetic material.
By forming insulating film with double-layer structure accoding to exemplary embodiment, even if insulating film is formed as thin
In the case of, prevented also from the contact between coil conductive pattern and magnetic material and waveform defect and short circuit can be reduced lack
It falls into.
Then, it can be formed on the upper surface of insulating substrate 23 of coil conductive pattern 42 and 44 and following heap respectively
Folded magnetic material layer forms magnetic body 50.
Can on two surfaces of insulating substrate 23 stacked magnetic material layer, and pressed by laminating method or isostatic pressed preparation method
Magnetic material layer processed forms magnetic body 50.It here, can be with same material hole to form core 55.
In addition, external electrode 80 can be formed as to the coil conductive pattern for being connected to the end surfaces for being exposed to magnetic body 50
42 and 44.
External electrode 80 can be formed by the paste comprising the metal with excellent conductivity, for example, can be by including nickel (Ni), copper
(Cu), the conductive paste of tin (Sn), silver-colored (Ag) or their alloy is formed.Print process, leaching can be passed through according to the shape of external electrode 80
Stain method etc. forms external electrode 80.
It will omit and the description according to the identical feature of the feature of chip electronic component of previous exemplary embodiment.
As described above, in chip electronic component and its manufacturing method accoding to exemplary embodiment, even if will be than root
In the case of being formed in coil conductive pattern according to the thin insulating film of the insulating film of the prior art, prevented also from coil conductive pattern
Case portion is exposed so that magnetic material and coil conductive pattern will not be in contact with each other.It is therefore possible to prevent waveform in high frequency
Defect.
Although having been shown and described above exemplary embodiment, it will be apparent to those skilled in the art that,
In the case of not departing from the scope of the present invention being defined by the claims, it can modify and change.
Claims (20)
1. a kind of chip electronic component, including：
Magnetic body, wherein being embedded with coil conductive pattern；
Oxide insulating film is arranged on the surface of coil conductive pattern；And
Polymer insulation film coats oxide insulating film,
Wherein, oxide insulating film has 0.6 μm to 0.8 μm of surface roughness Ra, and
Wherein, oxide insulating film has 0.5 μm to 2.5 μm of thickness.
2. chip electronic component as described in claim 1, wherein oxide insulating film is by including formation coil conductive pattern
The metal oxide of at least one metal in portion is formed.
3. chip electronic component as described in claim 1, wherein the oxidation being formed on the upper surface of coil conductive pattern
The surface roughness Ra of object insulating film is more than the surface for being formed in the oxide insulating film on the side surface of coil conductive pattern
Roughness.
4. chip electronic component as described in claim 1, wherein the oxidation being formed on the upper surface of coil conductive pattern
The average thickness of object insulating film is more than the average thickness for being formed in the oxide insulating film on the side surface of coil conductive pattern.
5. chip electronic component as described in claim 1, wherein the oxidation being formed on the upper surface of coil conductive pattern
Object insulating film has 1.8 μm to 2.5 μm of thickness.
6. chip electronic component as described in claim 1, wherein the oxidation being formed on the side surface of coil conductive pattern
Object insulating film has 0.8 μm to 1.8 μm of thickness.
7. chip electronic component as described in claim 1, wherein the shape on the surface of polymer insulation film and coil conductive pattern
The shape on the surface in case portion corresponds to.
8. chip electronic component as described in claim 1, wherein polymer insulation film has 1 μm to 3 μm of thickness.
9. chip electronic component as described in claim 1, wherein being averaged between oxide insulating film and polymer insulation film
Thickness ratio is 1:1.2 to 1:3.
10. chip electronic component as described in claim 1, wherein the region between the adjacent patterns of coil conductive pattern
At least partially by same material.
11. chip electronic component as described in claim 1, wherein manufacture oxide by the method included the following steps
Insulating film：
Oxide insulating film is formed by making the outer oxide of coil.
12. chip electronic component as claimed in claim 11, wherein manufacture oxide by the method included the following steps
Insulating film：
By exposing coil in high temperature or high humidity environment or forming oxide insulating film by chemical etching.
13. a kind of chip electronic component, including：
Magnetic body, including insulating substrate；
Coil conductive pattern is arranged at least one surface of insulating substrate；
First insulating film is arranged on the surface of coil conductive pattern；And
Second insulating film coats the first insulating film,
Wherein, the first insulating film has 0.6 μm to 0.8 μm of surface roughness Ra, and
Wherein, the first insulating film has 0.5 μm to 2.5 μm of thickness.
14. chip electronic component as claimed in claim 13, wherein the first insulating film is included in coil conductive pattern by having
The metal oxide of at least one of case portion metal is formed.
15. chip electronic component as claimed in claim 13, wherein the second insulating film includes polymer, the second insulating film
The shape on surface is corresponding with the shape on the surface of coil conductive pattern.
16. chip electronic component as claimed in claim 13, wherein be formed on the upper surface of coil conductive pattern
The surface roughness Ra of one insulating film is thick more than the surface for the first insulating film being formed on the side surface of coil conductive pattern
Rugosity.
17. chip electronic component as claimed in claim 13, wherein be formed on the upper surface of coil conductive pattern
The average thickness of one insulating film is more than the average thickness for being formed in the first insulating film on the side surface of coil conductive pattern.
18. chip electronic component as claimed in claim 13, wherein the region between the adjacent patterns of coil conductive pattern
At least partially by same material.
19. chip electronic component as claimed in claim 13, wherein manufacture first absolutely by the method included the following steps
Velum：
The first insulating film is formed by making the outer oxide of coil.
20. chip electronic component as claimed in claim 19, wherein manufacture first absolutely by the method included the following steps
Velum：
By exposing coil in high temperature or high humidity environment or forming the first insulating film by chemical etching.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
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| KR10-2013-0126137 | 2013-10-22 | ||
| KR20130126137 | 2013-10-22 | ||
| KR1020140090841A KR101565703B1 (en) | 2013-10-22 | 2014-07-18 | Chip electronic component and manufacturing method thereof |
| KR10-2014-0090841 | 2014-07-18 | ||
| CN201410566473.8A CN104575937B (en) | 2013-10-22 | 2014-10-22 | Chip electronic component and its manufacturing method |
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| CN201410566473.8A Division CN104575937B (en) | 2013-10-22 | 2014-10-22 | Chip electronic component and its manufacturing method |
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| CN201410566473.8A Active CN104575937B (en) | 2013-10-22 | 2014-10-22 | Chip electronic component and its manufacturing method |
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| CN112908612A (en) * | 2020-09-08 | 2021-06-04 | 奇力新电子股份有限公司 | Thin film inductor and manufacturing method thereof |
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| KR20160139967A (en) * | 2015-05-29 | 2016-12-07 | 삼성전기주식회사 | Coil Electronic Component |
| KR101813322B1 (en) | 2015-05-29 | 2017-12-28 | 삼성전기주식회사 | Coil Electronic Component |
| KR101719908B1 (en) | 2015-07-01 | 2017-03-24 | 삼성전기주식회사 | Coil electronic component and manufacturing method thereof |
| KR101751117B1 (en) * | 2015-07-31 | 2017-06-26 | 삼성전기주식회사 | Coil electronic part and manufacturing method thereof |
| KR102163056B1 (en) | 2015-12-30 | 2020-10-08 | 삼성전기주식회사 | Coil electronic part and manufacturing method thereof |
| KR102380838B1 (en) | 2016-01-28 | 2022-03-31 | 삼성전기주식회사 | Coil component and manufacturing method for the same |
| JP6615024B2 (en) * | 2016-03-24 | 2019-12-04 | 太陽誘電株式会社 | Electronic components |
| KR20180054264A (en) * | 2016-11-15 | 2018-05-24 | 삼성전기주식회사 | Thin-Film Type Inductor and Method For Manufacturing The Same |
| US20180174736A1 (en) * | 2016-12-15 | 2018-06-21 | Samsung Electro-Mechanics Co., Ltd. | Inductor and manufacturing method of inductor |
| KR101983190B1 (en) | 2017-06-23 | 2019-09-10 | 삼성전기주식회사 | Thin film type inductor |
| KR102029543B1 (en) * | 2017-11-29 | 2019-10-07 | 삼성전기주식회사 | Coil electronic component |
| KR102064041B1 (en) | 2017-12-11 | 2020-01-08 | 삼성전기주식회사 | Coil component |
| KR101973448B1 (en) * | 2017-12-11 | 2019-04-29 | 삼성전기주식회사 | Coil component |
| KR102052807B1 (en) | 2017-12-26 | 2019-12-09 | 삼성전기주식회사 | Inductor and Production method of the same |
| KR20190078884A (en) * | 2017-12-27 | 2019-07-05 | 삼성전기주식회사 | Inductor |
| JP7464352B2 (en) * | 2018-03-09 | 2024-04-09 | 日東電工株式会社 | Wiring board and manufacturing method thereof |
| CN111524695B (en) * | 2019-02-01 | 2021-08-31 | 乾坤科技股份有限公司 | Magnetic device and method of manufacturing the same |
| KR102224311B1 (en) | 2019-07-29 | 2021-03-08 | 삼성전기주식회사 | Coil component |
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Also Published As
| Publication number | Publication date |
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| CN104575937B (en) | 2018-05-18 |
| KR101952859B1 (en) | 2019-02-28 |
| KR102138887B1 (en) | 2020-07-29 |
| KR20150046717A (en) | 2015-04-30 |
| KR101565703B1 (en) | 2015-11-03 |
| KR20150073900A (en) | 2015-07-01 |
| CN104575937A (en) | 2015-04-29 |
| CN108597730B (en) | 2021-02-05 |
| KR20180031653A (en) | 2018-03-28 |
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