CN108540048A - Thermoelectricity optoelectronic integration nano energy collector in self energizing wireless sensing node - Google Patents
Thermoelectricity optoelectronic integration nano energy collector in self energizing wireless sensing node Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/10—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power including a supplementary source of electric power, e.g. hybrid diesel-PV energy systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/82—Connection of interconnections
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- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
- H10N19/101—Multiple thermocouples connected in a cascade arrangement
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
Abstract
Thermoelectricity optoelectronic integration nano energy collector in the self energizing wireless sensing node of the present invention, substrate is N-type silicon chip, being made on photronic light-receiving surface has suede structure, the first silicon nitride film and back of the body electric field structure, N-type nanometer injection region and p-type nanometer injection region are staggered, nanometer deposited layer of silicon dioxide layer passivation layer on injection region, and open a series of electrode contact hole；In the top of photocell interdigital electrode, many thermocouples are connected into thermoelectric pile, and each thermocouple is made of N-type polycrystalline silicon nano wire thermocouple arm and p-type polysilicon nano wire thermocouple arm, includes multiple row polysilicon nanowire on thermocouple arm, using nanometer wire-braced structures as connection；In the top of thermoelectric pile, the cavity structure produced is discharged by sacrificial layer, the top of cavity is separated with third silicon nitride film between metallic plate, with thermoelectric pile.
Description
Technical field
The present invention proposes the thermoelectricity optoelectronic integration nano energy collector in a kind of self energizing wireless sensing node, belongs to
In the technical field of microelectromechanical systems (MEMS).
Background technology
With the rise and development of technology of Internet of things, it to be used for the super low-power consumption radio-frequency receiving-transmitting component of radio sensing network node
At one of the hot spot of research, by optimizing circuit structure and adjustment working method, the power consumption of radio-frequency receiving-transmitting component can control
In microwatt magnitude.In order to avoid periodic replacement battery, researches and develops high performance energy harvester and radio sensing network node is carried out
Power supply has a very important significance.With the development of material science, the appearance of nano material opens thermoelectricity and photoelectricity research
New direction, in heat source or the occasion of illumination abundance, thermoelectric (al) type energy harvester and photo-electric based on nano material and technique
Energy harvester is the ideal power source of wireless network sensing node.
Invention content
Technical problem:The object of the present invention is to provide the thermoelectricity optoelectronic integrations in a kind of self energizing wireless sensing node to receive
Nanometric PN junctions and polysilicon nanometer cable architecture are respectively adopted with thermoelectric (al) type energy harvester in rice energy harvester, photocell, to
Improve output power, and be integrated in on a piece of substrate, can simultaneously in environment thermal energy and luminous energy be collected, in complicated week
Under collarette border, two kinds of collection modes can be complementary to one another, collaboration power supply.
Technical solution：In order to solve the above technical problems, the present invention proposes the heat in a kind of self energizing wireless sensing node
Electric optoelectronic integration nano energy collector.Its structure includes mainly photocell and thermoelectric (al) type energy harvester, and two parts are made
Make in on a piece of silicon chip, realizing the single-chip integration of thermoelectricity and photoelectricity, and the electrode of photocell and thermoelectric (al) type energy harvester
Positioned at the same side of silicon chip, convenient for the encapsulation in practical application, the insulation knot using the second silicon nitride film as two parts
Structure avoids electrical short.
Photronic substrate selects the N-type silicon chip of long carrier lifetime, light-receiving surface to use textured inverted pyramid matte
Structure, effect are to reduce the reflection of incident light；The antireflection silicon nitride film of a layer specific thickness is coated on suede structure,
Reduce bluk recombination and the surface recombination of battery using hydrogen passivation and fixed charge effect；It is made using ion injection method
One N-N+ height is tied, and be otherwise known as back of the body electric field structure, for reducing surface recombination；Using alumina formwork as ion implanting
Mask forms the N-type nanometer injection region being interspersed and P type nanometers injection region；One layer of dioxy is covered above nanometer injection region
SiClx layer passivation layer, and electrode contact hole has been opened, the surface recombination for reducing upper surface, photocell interdigital electrode is covered in electricity
On the contact hole of pole.
Thermoelectric (al) type energy harvester is mainly made of horizontal positioned thermoelectric pile and heat-dissipating metal sheet；Wherein thermoelectric pile be by
Many thermocouples are connected in series, and each thermocouple is by N-type polycrystalline silicon nano wire thermocouple arm and p-type polysilicon nano wire heat
Galvanic couple arm is constituted, and is included multiple row polysilicon nanowire on thermocouple arm, is used as and is connected using nanometer wire-braced structures between different lines
It connects, improves the Stability and dependability of structure；Metal is interconnected as thermoelectric pile using golden (Au) between two semiconductor arms, because
Heat is all transmitted to cold end by the hot junction of thermoelectric pile, so thermocouple is in parallel on thermal conduction study, it is electrically in series；In order to facilitate survey
Try and avoid partial deviations that the failure of entire device, thermoelectric (al) type energy harvester is caused to make multiple output electrodes；In thermoelectricity
The top of heap discharges the cavity structure produced by sacrificial layer, further enhances being thermally isolated between cold and hot both ends；Thermoelectricity
The cold end of formula energy harvester has effectively achieved heat dissipation by one piece of metallic plate, increases the thermal coupling of thermoelectric pile and ambient enviroment
It closes, metallic sheet material is aluminium (Al), and silicon nitride film is separated between thermoelectric pile to realize insulation；Due to heat flow path perpendicular to
Chip surface is convenient for the encapsulation of device in the application.
Photronic operation principle is as follows：When the photon with appropriate energy is incident in photronic PN junction, photon with
It constitutes semi-conducting material interaction and generates electrons and holes, under the electric field action in PN junction region, electronics expands to N-type semiconductor
It dissipates, hole is spread to P-type semiconductor, is gathered in two electrode sections respectively, generates certain potential difference output power simultaneously；Electricity
When the output power of pole, other than photogenerated current, due to output voltage, there is also a knot " dark electricity opposite with photogenerated current
Stream " is output to the difference of the electric current of load actually photogenerated current and dark current.
The operation principle of thermoelectric (al) type energy harvester is as follows：When applying certain temperature difference in device hot and cold side, heat can be from
Hot junction face is injected, and after thermoelectric pile, is finally discharged from cold end face, and certain temperature is formed on thermoelectric (al) type energy harvester
Distribution；Since there are certain thermal resistances for thermoelectric pile, the corresponding temperature difference is will produce between the cold and hot node of thermoelectric pile, based on plug shellfish
The both ends of gram effect thermoelectric pile can export the potential directly proportional to the temperature difference, and power output can be achieved after connection load.
In practical applications, photronic light is face-up for the miniature energy collector, the light being used in environment of accepting,
Due to illumination heat, while as the hot junction face of device, another surface of covered metal plate is affixed on radiator, as device
Cold end；After the energy that photocell and thermoelectric (al) type energy harvester are collected is by DC-DC conversion modules, it is stored in battery, it can
To be arranged in the various wireless sensing nodes power supply on power amplifier periphery.
Advantageous effect：The present invention has the following advantages relative to existing energy harvester：
1. being had using ripe CMOS technology and MEMS technology manufacture, advantage in the miniature energy collector technique of the present invention
It is small, at low cost, can batch micro operations, and can with microelectronic circuit realize single-chip integration；
2. the single-chip integration of two kinds of collection of energy modes of thermoelectricity-photoelectricity is realized, under complicated ambient enviroment, two kinds of collections
Mode can be complementary to one another, collaboration power supply；
3. photocell uses all back-contact electrodes structure, opposite Traditional photovoltaic pool structure to be hindered with no shading loss, low electrode string
With the advantage interconnected convenient for device；
4. incident light can carry out Multiple Scattering in nanometric PN junctions, formed so-called " sunken luminous effect ", to increase light
The absorbed probability of son, and nano wire, to the polarization direction of incident light, incident angle, incident wavelength is also insensitive, causes to receive
There is very strong capture ability in rice injection region to incident light, to improve photronic transfer efficiency.
5. thermoelectric (al) type energy harvester uses hybrid architecture, i.e. heat flow path is perpendicular to chip surface, and current path
It is parallel to chip surface, the encapsulation of energy harvester is simplified perpendicular to the heat flow path of chip surface, and is located at chip plane
Interior thermoelectric pile can be used the making of IC compatible technologies, have higher integration density and larger output voltage density；
6. the thermocouple of thermoelectric (al) type energy harvester uses polysilicon nanowire, because of quantum confinement and phonon scattering effect,
The thermal conductivity of polysilicon nanowire is far below conventional bulk, improves the conversion efficiency of thermoelectric of device；
7. photocell and thermoelectric (al) type energy harvester are solid state energy converter, without movable member, reliability is high, makes
With long lifespan, Maintenance free, when work, not will produce noise；
8. the complexity that all electrodes of miniature energy collector in same plane, avoid similar via is electrically connected.
Description of the drawings
Fig. 1 is that the application of the thermoelectricity optoelectronic integration nano energy collector in self energizing wireless sensing node of the present invention is shown
It is intended to；
Fig. 2 is the polysilicon of the thermoelectricity optoelectronic integration nano energy collector in self energizing wireless sensing node of the present invention
Nano wire thermocouple arm configuration schematic diagram；
Fig. 3 is the vertical view knot of the thermoelectricity optoelectronic integration nano energy collector in self energizing wireless sensing node of the present invention
Structure schematic diagram；
Fig. 4 is the overlooking structure diagram after the completion of prepared by thermoelectric (al) type energy harvester electrode of the present invention；
Fig. 5 is the overlooking structure diagram after the completion of prepared by photocell electrode of the present invention；
Fig. 6 be self energizing wireless sensing node of the present invention in thermoelectricity optoelectronic integration nano energy collector A-A ' to
Sectional view.
Figure includes：Photocell 1, thermoelectric (al) type energy harvester 2, light-receiving surface 3, radiator 4, DC-DC conversion modules 5, electricity
Pond 6, wireless sensing node 7, polysilicon nanowire 8, nanometer wire-braced structures 9,
Silicon chip 10, suede structure 11 carry on the back electric field structure 12, and the first silicon nitride is thin by 13, N-type nanometer injection zone 14, p-type
Nanometer injection zone 15, photocell interdigital electrode 16, silicon dioxide layer passivation layer 17, N-type polycrystalline silicon nano wire thermocouple arm 18,
P-type polysilicon nano wire thermocouple arm 19, the second silicon nitride film 20, thermoelectric pile interconnection metal 21, third silicon nitride film 22,
Metallic plate 23, thermoelectric pile output electrode 24.
Specific implementation mode
The following further describes the specific embodiments of the present invention with reference to the drawings.
Referring to Fig. 1-6, the present invention proposes the thermoelectricity optoelectronic integration nanometer energy in a kind of self energizing wireless sensing node
Measure collector.Its structure includes mainly photocell 1 and thermoelectric (al) type energy harvester 2, and two parts are made in a piece of silicon chip 10
On, the single-chip integration of thermoelectricity and photoelectricity is realized, and the electrode of photocell 1 and thermoelectric (al) type energy harvester 2 is located at the same of silicon chip
Side, convenient for the encapsulation in practical application, the insulation system using the second silicon nitride film 20 as two parts avoids electricity
Short circuit.
The substrate of photocell 1 selects the N-type silicon chip 10 of long carrier lifetime, light-receiving surface 3 to use textured inverted pyramid
Suede structure 11, effect are to reduce the reflection of incident light；The antireflection of a layer specific thickness is coated on suede structure 11
One silicon nitride is thin by 13, reduces bluk recombination and the surface recombination of battery using hydrogen passivation and fixed charge effect；It is noted using ion
Enter method and made a N-N+ height knot, be otherwise known as back of the body electric field structure 12, for reducing surface recombination；Using oxidation aluminum dipping form
Plate forms the N-type nanometer injection region 14 being interspersed and p-type nanometer injection region 15, alumina formwork as ion implantation mask
Upper nanometer opening diameter is 1-100nm, since incident light can carry out Multiple Scattering in nanostructure, is formed " sunken luminous effect ",
To increase the absorbed probability of photon, and nano wire is to the polarization direction of incident light, incident angle and incident wavelength
It is insensitive, cause nanometer injection region to have very strong capture ability to incident light, to improve the transfer efficiency of photocell 1；
Covering layer of silicon dioxide layer passivation layer 17 above nanometer injection region, and a series of electrode contact hole has been opened, for reducing
The surface recombination on surface, photocell interdigital electrode 16 are covered on electrode contact hole, are connected with nanometer injection region, compared to traditional
The electrode width of photocell structure, upper surface is very big, on the one hand reduces the backside reflection of battery, on the other hand reduces battery
Dead resistance, be conducive to improve output performance.
Thermoelectric (al) type energy harvester 2 is mainly made of horizontal positioned thermoelectric pile and heat-dissipating metal sheet 23；Thermoelectric pile be by
Many thermocouples are connected in series, and each thermocouple is by N-type polycrystalline silicon nano wire thermocouple arm 18 and P type polysilicon nanometers
Line thermocouple arm 19 is constituted, and includes multiple row polysilicon nanowire 8 on thermocouple arm, the width of nano wire is 1-100nm, and length is
1-10 μm, the spacing between same row polysilicon nanowire 8 is 1-100 nm, and nanometer wire-braced structures 9 are used between different lines
As connection, the Stability and dependability of structure is improved；Because of quantum confinement and phonon scattering effect, the heat of polysilicon nanowire 8
Conductance is far below conventional bulk, improves the conversion efficiency of thermoelectric of thermoelectric (al) type energy harvester 2；It is adopted between two semiconductor arms
Au is used to interconnect metal 21 as thermoelectric pile, because heat is all transmitted to cold end by the hot junction of thermoelectric pile, thermocouple is conducting heat
It is in parallel on, it is electrically in series；In order to facilitate the failure for testing and avoiding partial deviations to lead to entire device, thermoelectric (al) type energy is received
Storage 2 has made multiple thermoelectric pile output electrodes 24；In the top of thermoelectric pile, the cavity knot produced is discharged by sacrificial layer
Structure further enhances being thermally isolated between cold and hot both ends；Thermoelectric pile cold end is had effectively achieved scattered by one piece of metallic plate 23
Heat, increases the thermal coupling of thermoelectric pile and ambient enviroment, and 23 material of metallic plate is separated with third silicon nitride between Al, with thermoelectric pile
Film 22 is to realize insulation；Since heat flow path is perpendicular to chip surface, it is convenient for the encapsulation of device in the application.
The operation principle of photocell 1 is as follows：When the photon with appropriate energy is incident in the PN junction of photocell 1, photon
Electrons and holes are generated with semi-conducting material interaction is constituted, under the electric field action in PN junction region, electronics is to N-type semiconductor
Diffusion, hole are spread to P-type semiconductor, are gathered in two electrode sections respectively, generate certain potential difference output power simultaneously；
When electrode output power, other than photogenerated current, due to output voltage, there is also a knot " dark electricity opposite with photogenerated current
Stream " is output to the difference of the electric current of load actually photogenerated current and dark current.
The operation principle of thermoelectric (al) type energy harvester 2 is as follows：When applying certain temperature difference in device hot and cold side, heat can be from
Hot junction face is injected, and after thermoelectric pile, is finally discharged from cold end face, and certain temperature is formed on thermoelectric (al) type energy harvester 2
Degree distribution；Since there are certain thermal resistances for thermoelectric pile, the corresponding temperature difference is will produce between the cold and hot node of thermoelectric pile, based on plug
The both ends of Bake effect thermoelectric pile can export the potential directly proportional to the temperature difference, and power output can be achieved after connection load.
The miniature energy collector in practical applications, as shown in Fig. 1, the light-receiving surface 3 of photocell 1 upward, for connecing
Light in by environment, due to illumination heat, while as the hot junction face of device, another surface of covered metal plate 23 is affixed on
On radiator 4, the cold end as device；The energy that photocell 1 and thermoelectric (al) type energy harvester 2 are collected passes through DC-DC moduluss of conversion
It after block 5, is stored in battery 6, can be the power supply of various wireless sensing nodes 7 for being arranged in power amplifier periphery.
The preparation method of thermoelectricity optoelectronic integration nano energy collector in the self energizing wireless sensing node of the present invention
It is as follows：
1) the N-type fused silicon chip 10 for selecting 4 inches is substrate, and thickness is 350 μm, and crystal orientation is<100>, resistivity 10
Ω cm, minority carrier life time are more than 500 μ s；
2) suede structure 11 at the back side is prepared, n-type doping forms back of the body electric field structure 12, then low-pressure chemical vapor phase deposition
(LPCVD) one layer of silicon nitride is thin, as optic anti-reflective layer；
3) nano modification technique is used to carry out the modification cleaning of surface microcell, nano modification technique (is contained to contain organic base
Amount is 0.1~10%) and the alkaline aqueous solution processing diffusion of size (content be less than 0.1%) after silicon chip, removal silicon chip table
The microdefect and objectionable impurities in face, treatment temperature are 25~85 DEG C, and the time is 30~15 minutes；
4) porous anodic alumina template is prepared using two step anodic oxidation electrochemical processes, is used for photocell nano-array knot
The doping of structure；
5) by the pattern transfer to silicon substrate of porous anodic alumina template, N-type phosphonium ion doping is carried out to silicon chip, is obtained
To the N-type nanometer injection region 14 of photocell nano array structure；
6) by the pattern transfer to silicon substrate of porous anodic alumina template, p-type boron ion doping is carried out to silicon chip, is obtained
To the p-type nanometer injection region 15 of photocell nano array structure；
7) using plasma enhancing chemical vapor deposition (PECVD) technique deposits the silica and light of one layer of 100nm
It is carved into type, as silicon dioxide layer passivation layer 17, and exposes electrode contact region；
8) aluminium layer and the photoetching for evaporating one layer of 2 μ m-thick, form photocell interdigital electrode 16；
9) pecvd process is used to deposit the second silicon nitride film 20, as electrical insulator layer；
10) low-pressure chemical vapor phase deposition (LPCDV) technique is used to grow a layer thickness for 1 μm of polysilicon membrane；
11) electron beam lithography or extreme ultraviolet lithography is used to form polysilicon nanowire 8；
12) doping of N-type phosphonium ion is carried out to 8 corresponding region of polysilicon nanowire respectively and p-type boron ion is adulterated, respectively shape
At N-type polycrystalline silicon nano wire thermocouple arm 18 and p-type polysilicon nano wire thermocouple arm 19；
13) layer gold that evaporation a layer thickness is 0.2 μm, stripping method molding form thermoelectric pile interconnection metal 21 and thermoelectric pile
Output electrode 24；
14) pecvd process is used to grow one layer of silicon nitride film, thickness is 0.1 μm, as dielectric insulation layer and protection
Layer；
15) polyimides that spin coating a layer thickness is 3 μm, and photoetching is molded, as sacrificial layer；
16) metallic aluminium that plating a layer thickness is 1 μm, photoetching are molded the heat-dissipating metal sheet 23 as device；
17) after being cleaned by ultrasonic, silicon chip is put into acetone 10 minutes, then is immediately placed in ethyl alcohol 10 minutes, and release polyimides is sacrificial
Domestic animal layer, finally washes by water and dries.
Distinguish whether be the structure standard it is as follows：
Thermoelectricity optoelectronic integration nano energy collector in the self energizing wireless sensing node of the present invention, substrate are N types
Silicon chip 10, making on light-receiving surface 3 has suede structure 11, the first silicon nitride film 13 and back of the body electric field structure 12, using oxidation aluminum dipping form
Plate forms N-type nanometer injection region 14 and p-type nanometer injection region 15, the incident light meeting in nanometric PN junctions as ion implantation mask
Multiple Scattering is carried out, is formed so-called " sunken luminous effect ", to increase the absorbed probability of photon, and nano wire is to incidence
The polarization direction of light, incident angle, incident wavelength is also insensitive, and nanometer injection region is caused to have very strong capture energy to incident light
Power, to improve photronic transfer efficiency；Nanometer deposited layer of silicon dioxide layer passivation layer 17 on injection region, and open
A series of electrode contact hole is connected with photronic photocell interdigital electrode 16；Thermoelectric (al) type energy harvester 2 and photocell it
Between be separated with the second silicon nitride film 20, critical piece thermoelectric pile is connected in series by many thermocouples, and each thermocouple
It is made of N type polysilicon nanowire thermocouples arm 18 and p-type polysilicon nano wire thermocouple arm 19, comprising more on thermocouple arm
Row polysilicon nanowire 8, using nanometer wire-braced structures 9 as connection between different lines, improve the stability of structure with it is reliable
Property, because of quantum confinement and phonon scattering effect, the thermal conductivity of polysilicon nanowire is far below conventional bulk, improves device
Conversion efficiency of thermoelectric；Metal 21 is interconnected as thermoelectric pile using Au between two semiconductor arms, while having made multiple thermoelectric piles
Output electrode 21；In the top of thermoelectric pile, the cavity structure produced is discharged by sacrificial layer, the top of cavity is metallic plate
Third silicon nitride film 22 is separated between 23, with thermoelectric pile.
Meet conditions above structure be considered as the present invention self energizing wireless sensing node in thermoelectricity optoelectronic integration
Nano energy collector.
Claims (3)
1. the thermoelectricity optoelectronic integration nano energy collector in a kind of self energizing wireless sensing node, it is characterized in that：This is miniature
Energy harvester is by (2) two part structures of photocell (1) and thermoelectric (al) type energy harvester for being made in same N-type silicon chip (10)
At centre is separated with the second silicon nitride film (20), and being made on silicon chip (10) light-receiving surface (3) has suede structure (11), the first nitridation
Silicon thin film (13) and back of the body electric field structure (12)；N-type nanometer injection region (14) and p-type nanometer injection region (15) are alternately distributed, with light
Battery interdigital electrode (16) is connected, and layer of silicon dioxide layer passivation layer (17) is deposited on nanometer injection region；Thermoelectric (al) type energy is received
The critical piece of storage (2) is thermoelectric pile, and thermoelectric pile one end is located at the top of photocell interdigital electrode (16), and the other end is located at light
The gap location of battery interdigital electrode (16), is connected in series by many thermocouples, and thermoelectric pile surrounding has made multiple thermoelectric pile outputs
Electrode (24)；In the top of thermoelectric pile, the cavity structure produced is discharged by sacrificial layer, the top of cavity is metallic plate
(23), third silicon nitride film (22) is separated between thermoelectric pile；N-type nanometer injection region (12) and p-type nanometer injection region (13)
Using alumina formwork as ion implantation mask, nanometer opening diameter is 1-100nm on alumina formwork, since incident light exists
Multiple Scattering can be carried out in nanostructure, formed " sunken luminous effect ", to increase the absorbed probability of photon, and nano wire
It is also insensitive to the polarization direction of incident light, incident angle and incident wavelength, lead to N-type nanometer injection region (12) and p-type nanometer
There is very strong capture ability in injection region (13) to incident light, to improve the transfer efficiency of photocell (1)；Miniature energy is collected
The thermoelectric pile of device (2) is by N-type polycrystalline silicon nano wire thermocouple arm (18) and p-type polysilicon nano wire thermocouple arm (19) structure
At comprising multiple row polysilicon nanowire (8) on thermocouple arm, the width of polysilicon nanowire (8) is 1-100nm, length 1-
10 μm, the spacing between same row polysilicon nanowire (8) is 1-100nm, and nanometer wire-braced structures (9) are used between different lines
As connection, because of quantum confinement and phonon scattering effect, the thermal conductivity of polysilicon nanowire (8) is far below conventional bulk, carries
The high conversion efficiency of thermoelectric of device.
2. a kind of micro generation based on vertical-type nanometer thermoelectric even summation superlattices photoconductive structure according to claim 1
Machine, it is characterized in that：N-type polycrystalline silicon nano wire thermocouple arm (18) and p-type polysilicon nano wire thermocouple arm (19) are made using Au
Metal (21) is interconnected for thermoelectric pile.
3. a kind of micro generation based on vertical-type nanometer thermoelectric even summation superlattices photoconductive structure according to claim 1
Machine, it is characterized in that：Photocell interdigital electrode (16) and metallic plate (23) material are Al.
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