CN108511591A - Polysilicon nanowire rectangular array and superlattices photoconductive structure miniature energy collector - Google Patents
Polysilicon nanowire rectangular array and superlattices photoconductive structure miniature energy collector Download PDFInfo
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- CN108511591A CN108511591A CN201810208203.8A CN201810208203A CN108511591A CN 108511591 A CN108511591 A CN 108511591A CN 201810208203 A CN201810208203 A CN 201810208203A CN 108511591 A CN108511591 A CN 108511591A
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
- H10N19/101—Multiple thermocouples connected in a cascade arrangement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/30—Thermophotovoltaic systems
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The miniature energy collector based on polysilicon nanowire rectangular array and superlattices photoconductive structure of the present invention, is made of photocell and thermoelectric energy collector.Photocell uses superlattice structure, thermoelectric energy collector is formed by nano wire rectangular element rectangular array, nano wire rectangular element obtains nanometer thermoelectric idol using deep ultraviolet light carving technology, have the characteristics that compared with traditional thermoelectricity photovoltaic energy collection device small, there is higher thermoelectricity electricity conversion simultaneously, electric appliance interconnection is carried out between nanometer thermoelectric couple, between nano wire rectangular element by gold thread line, the energy that photocell and thermoelectric energy collector are collected exports pad and photoelectric yield pad by thermoelectricity and exported.Collected energy is ultimately stored in rechargeable battery, and the electric energy in rechargeable battery may be implemented to the power supply of wireless sensing node.
Description
Technical field
The present invention proposes a kind of based on the miniature energy of polysilicon nanowire rectangular array and superlattices photoconductive structure receipts
Storage belongs to the technical field of microelectromechanical systems (MEMS).
Background technology
With the rapid development of MEMS, wireless communication, wearable device and low-power-consumption embedded technology, these
The power supply supply of network node depends on battery in the past, but the replacement of battery and the maintenance of system are relatively difficult and of high cost
It is high.The energy acquisition technology that can realize sustainable power supply has carried out solution for locally supplied power source's supply belt.Thermoelectric energy is adopted
Storage is small with its, light-weight, long lifespan, without mechanical moving element and it is environmentally protective the advantages that, obtained industry and academic
The attention on boundary.The fast development of MEMS technology and application, the energy supply of temperature management and passive device to microcell propose
Requirements at the higher level, this makes the miniaturization technologies of thermo-electric device become one of the important topic of thermo-electric device research.
On the one hand, develop towards low-power consumption miniaturization with electronic device, minisize thermoelectric energy collecting device has extensively
General application market；On the other hand, the research and preparation of high figure of merit thermoelectric material make minisize thermoelectric energy collecting device
Output performance is expected to further increase.The application study of minisize thermoelectric energy collecting device is important using having to sustainable energy
Strategic importance.Using polysilicon nanowire rectangular array and superlattices photoconductive structure as the miniature energy collector of generating element,
Compared with traditional thermoelectricity photovoltaic energy collection device, polysilicon nanowire thermal conductivity is far below conventional bulk, has higher
Thermoelectric conversion efficiency.
Invention content
Technical problem:The object of the present invention is to provide one kind being based on polysilicon nanowire rectangular array and superlattices photoelectricity
The miniature energy collector of structure, including thermoelectric energy collector and photocell, be respectively adopted polysilicon nanometer rectangular array with
Superlattices photoconductive structure to improve output power, and is integrated in on a piece of substrate, can simultaneously in environment thermal energy and
Luminous energy is collected, and under complicated ambient enviroment, two kinds of collection modes can be complementary to one another, and collected energy will convert into electricity
It can store for powering to wireless sensing node, finally realize green communications.
Technical solution：In order to solve the above technical problems, the present invention, which proposes one kind, being based on polysilicon nanowire rectangular array
With the miniature energy collector of superlattices photoconductive structure.The structure includes mainly photocell and thermoelectric energy collector, the two system
For in same substrate, the single-chip integration of photoelectricity-thermoelectricity is realized.
Miniature energy collector based on polysilicon nanowire rectangular array and superlattices photoconductive structure is produced on long current-carrying
On the N-type silicon chip substrate in sub- service life, mainly formed by photocell and thermoelectric energy collector are integrated.Photocell is served as a contrast by N-type silicon chip
Bottom, matte, plating aluminium oxide film layer, superlattice structure PN junction, silicon nitride layer, photocell optoelectronic pole and photocell export pad structures
At.Thermoelectric energy collector is made of polysilicon nanowire rectangular element, passes through metal between polysilicon nanowire rectangular element
Line carries out electric appliance interconnection, and polysilicon nanowire rectangular element includes nanometer thermoelectric heap, silicon dioxide layer of protection, polyimides
Layer and metallic heat radiating plate.Wherein nanometer thermoelectric heap includes N-type polycrystalline silicon nano line cluster, p-type polysilicon nano line cluster, metal company
Line, polymethyl methacrylate and thermoelectricity export pad.Photocell and thermoelectric energy collector are separated by by silicon dioxide layer of protection
From.
Photronic substrate selects the N-type silicon chip of long carrier lifetime, and the lower surface of substrate is as light-receiving surface, using knitting
The inverted pyramid suede structure of structure, effect are to reduce the reflection of incident light；A layer specific thickness is coated on suede structure
Plating aluminium oxide film layer, reduce bluk recombination and the surface recombination of battery using hydrogen passivation and fixed charge effect；In lower surface
A N-N+ height is made using ion injection method to tie, be otherwise known as back of the body electric field structure, for reducing surface recombination；
The upper surface of battery, non-crystalline silicon and nanometer silicon carbide film are alternately arranged composition superlattice structure, in the top of superlattice structure
The monocrystalline silicon thin film of one layer of extension is covered, is partly P-doped zone, is partly n-type doping as photronic emitter region
Area covers layer of silicon dioxide layer passivation layer, and in specific for forming Ohmic contact with base electrode on monocrystalline silicon thin film
Region opened a series of electrode contact hole, the surface recombination for reducing upper surface, interdigitated photocell electrode includes base
Region electrode and transmitting region electrode, are made of metal interconnection layer, compare traditional photocell structure, the electrode width of upper surface
It is very big, on the one hand reduce the backside reflection of battery, on the other hand reduce the dead resistance of battery, is conducive to improve output
Performance.
Thermoelectric energy collector is made of polysilicon nanowire rectangular element rectangular array, polysilicon nanowire rectangle list
The horizontal nano thermoelectric pile of member is connected in series by multipair horizontal nano thermocouple, and horizontal nano thermocouple is then by being horizontally arranged
N-type polycrystalline silicon nano line cluster and p-type polysilicon nano line cluster constitute, polysilicon nanowire cluster directly utilize metal contact wires
Electric appliance interconnection is carried out, on a silicon substrate in four mode structural arrangement of level, nanometer thermoelectric heap center covers metallic heat radiating plate, has
Heat dissipation is realized to effect, increases the thermal coupling of nanometer thermoelectric heap and ambient enviroment, the surrounding of nanometer thermoelectric heap covers one layer
Polyimide layer is isolated as thermal insulation layer, realization with the calorifics in nanometer thermoelectric heap hot junction；In order to increase thermoelectric energy collector knot
The stability of structure is filled with polymethyl methacrylate between nanometer thermoelectric idol；Also one layer of silicon nitride makees on nanometer thermoelectric heap
For electrical apparatus insulation layer.There is silicon dioxide layer between thermoelectric energy collector and photocell, as electrical apparatus insulation layer.
Photronic operation principle is as follows：When the photon with appropriate energy is incident in photronic PN junction, photon with
It constitutes semi-conducting material interaction and generates electrons and holes, under the electric field action in PN junction region, electronics is to N-type semiconductor
Diffusion, hole are spread to P-type semiconductor, are gathered in two electrode sections respectively, and it is defeated in photoelectricity simultaneously to generate certain potential difference
Go out pad output powers.When output power, other than photogenerated current, due to output voltage, there is also one and photogenerated current phase
Anti- knot " dark current " is output to the difference of the electric current of load actually photogenerated current and dark current.
The operation principle of thermoelectric energy collector is as follows：When based on polysilicon nanowire rectangular array and superlattices light
Apply certain temperature difference on the heat sink of the miniature energy collector of electric structure, heat can be injected from hot junction face, by nanometer heat
After pile, finally it is discharged from cold end face, and certain Temperature Distribution is formed in thermoelectric energy collector.Due to nanometer thermoelectric
There are certain thermal resistances for heap, will produce the corresponding temperature difference between the cold and hot node of nanometer thermoelectric heap, are received based on Seebeck effect
The thermoelectricity output pad at rice thermoelectric pile both ends can export the potential directly proportional to the temperature difference, and power output can be achieved after connection load.
The miniature energy collector based on polysilicon nanowire rectangular array and superlattices photoconductive structure is received for radio frequency
It sends out in component, by the heat sink based on polysilicon nanowire rectangular array and the miniature energy collector of superlattices photoconductive structure
It is attached to above the power amplifier of radio-frequency receiving-transmitting component, the thermal energy to dissipate in working power amplifier is collected, and can be subtracted
The waste of few energy, improves efficiency of energy utilization；Photronic light is face-up, for the light in environment of accepting, to luminous energy
It is captured, after the energy of collection is by DC-DC conversion modules, is stored in battery, can be to be arranged in power amplifier week
The various wireless sensing nodes on side are powered, and finally realize green communications.
Advantageous effect：The present invention has the following advantages relative to existing generator：
1. the present invention the miniature energy collector based on polysilicon nanowire rectangular array and superlattices photoconductive structure with
Polysilicon nanowire rectangular array and superlattices photoconductive structure are as generating element, with traditional thermoelectricity photovoltaic energy collection device
It compares, polysilicon nanowire thermal conductivity is far below conventional bulk, has higher thermoelectric conversion efficiency；
2. using ripe CMOS technology and MEMS technology manufacture in technique, advantage have it is small, at low cost, can batch
Manufacture, and can realize single-chip integration with microelectronic circuit；
3. the single-chip integration of two kinds of collection of energy modes of thermoelectricity-photoelectricity is realized, under complicated ambient enviroment, two kinds of receipts
Mode set can be complementary to one another, collaboration power supply；
4. photocell uses all back-contact electrodes structure, opposite Traditional photovoltaic pool structure, with no shading loss, low electrode string
Resistance and the advantage interconnected convenient for device；
5. the thermoelectric energy of the miniature energy collector based on polysilicon nanowire rectangular array and superlattices photoconductive structure
Collector uses horizontal type structure, i.e. heat flow path to be parallel to chip surface, and current path is parallel to chip surface so that receives
The both ends of rice thermoelectric pile have quite larger temperature difference, while the nanometer thermoelectric heap in chip plane, and it is simultaneous that IC can be used
Hold technique to make, there is higher integration density and larger output voltage density；
6. photocell is solid state energy converter with thermoelectricity photovoltaic energy collection device, without movable member, reliability is high,
Service life is long, Maintenance free, and when work not will produce noise；
7. all electrodes of the miniature energy collector based on polysilicon nanowire rectangular array and superlattices photoconductive structure
In same plane, the complexity for avoiding similar via is electrically connected.
Description of the drawings
Fig. 1 is that the present invention is based on the miniature energy collectors of polysilicon nanowire rectangular array and superlattices photoconductive structure
Application schematic diagram in radio-frequency receiving-transmitting component；
Fig. 2 is that the present invention is based on the miniature energy collectors of polysilicon nanowire rectangular array and superlattices photoconductive structure
Photronic overlooking structure diagram；
Fig. 3 is that the present invention is based on the miniature energy collectors of polysilicon nanowire rectangular array and superlattices photoconductive structure
Photocell Fig. 2 in A-A ' to sectional view；
Fig. 4 is that the present invention is based on the miniature energy collectors of polysilicon nanowire rectangular array and superlattices photoconductive structure
Thermoelectric power measuring device in nano wire rectangular element nanometer thermoelectric heap vertical view；
Fig. 5 is that the present invention is based on the miniature energy collectors of polysilicon nanowire rectangular array and superlattices photoconductive structure
Thermoelectric power measuring device in nano wire rectangular element nanometer thermoelectric heap (including lower layer's photocell) Fig. 4 in B-B ' to sectional view；
Fig. 6 is that the present invention is based on the miniature energy collectors of polysilicon nanowire rectangular array and superlattices photoconductive structure
Thermoelectric power measuring device in nano wire rectangular element vertical view；
Fig. 7 is based on polysilicon nanowire rectangle for the present invention made of four nano wire rectangular element rectangular arrays
The vertical view of the thermoelectric pile of the miniature energy collector of array and superlattices photoconductive structure；
Fig. 8 is based on polysilicon nanowire rectangle for the present invention made of four nano wire rectangular element rectangular arrays
The final vertical view of the miniature energy collector of array and superlattices photoconductive structure；
Fig. 9 is based on polysilicon nanowire rectangle for the present invention made of four nano wire rectangular element rectangular arrays
C-C ' in Fig. 8 of the miniature energy collector of array and superlattices photoconductive structure is to sectional view；
Figure includes：Radio-frequency receiving-transmitting component amplifiers 1, follow-up signal processing module 2, four mode nanometer thermoelectric energy of connecting
Amount collects 3, DC-DC conversion modules 4, wireless sensing node 5, and rechargeable battery 6 based on polysilicon nanowire rectangular array and surpasses
The miniature energy collector 3 of lattice photoconductive structure includes photocell and thermoelectric energy collector, and photocell includes N-type silicon substrate
7, suede structure 8, silicon nitride film 9 carries on the back electric field structure 10, superlattice structure 11, epitaxy single-crystal silicon thin film 12, base electrode
13, P-doped zone 14 emits region electrode 15, silicon dioxide layer passivation layer 16, photoelectric yield pad 17, thermoelectric energy collector
It is formed by polysilicon nanowire rectangular element array, polysilicon nanowire rectangular element includes nanometer thermoelectric heap, the second dioxy
SiClx layer 18, polyimide layer 19, metallic heat radiating plate 20, nanometer thermoelectric heap include N-type polycrystalline silicon nano line cluster 21, p-type polycrystalline
Silicon nanowires cluster 22, metal connecting line 23, polymethyl methacrylate 24 and thermoelectricity export pad 25, polysilicon nanowire rectangle
Electric appliance interconnection is carried out by carrying out line 23 between unit, photocell and thermoelectric energy collector are protected by the first silica
Layer 26 carries out electric isolation.
Specific implementation mode
The following further describes the specific embodiments of the present invention with reference to the drawings.
Referring to Fig. 1, the present invention proposes a kind of micro- based on polysilicon nanowire rectangular array and superlattices photoconductive structure
Type energy harvester, major function are that the luminous energy in the thermal energy and environment for collect radio-frequency receiving-transmitting component amplifiers 1 is passed to wireless
Feel node 5 to power.By the gold based on polysilicon nanowire rectangular array and the miniature energy collector 3 of superlattices photoconductive structure
Belong to the surface that heat sink 12 is attached to radio-frequency receiving-transmitting component amplifiers 1, the follow-up letter of output termination of radio-frequency receiving-transmitting component amplifiers 1
Number processing module 2, the miniature energy collector 3 based on polysilicon nanowire rectangular array and superlattices photoconductive structure will be collected
The thermal energy of radio-frequency receiving-transmitting component amplifiers 1 is converted into electric energy by Seebeck effect, and the luminous energy being collected simultaneously in environment is converted into
Then the electric energy of collection is converted into DC signal by DC-DC conversion modules 4, is ultimately stored on rechargeable battery 6 by electric energy
In.Electricity in rechargeable battery 6 may be implemented to the power supply of wireless sensing node 5.
Fig. 2 is photronic vertical view, Fig. 3 be in Fig. 2 photronic A-A ' to sectional view.Photronic substrate is selected
The N-type silicon substrate 7 of long carrier lifetime, the lower surface of substrate is as light-receiving surface, using textured inverted pyramid suede structure
8, effect is to reduce the reflection of incident light；The antireflection silicon nitride film 9 of a layer specific thickness is coated on suede structure 8,
Reduce bluk recombination and the surface recombination of battery using hydrogen passivation and fixed charge effect；Ion implanting side is used in lower surface
Method has made a N-N+ height and has tied, and be otherwise known as back of the body electric field structure 10, for reducing surface recombination；In the upper surface of battery,
Non-crystalline silicon and nanometer silicon carbide film, which are alternately arranged, constitutes superlattice structure 11, per layer thickness in 2-10nm, in superlattice structure
11 top covers one layer of epitaxy single-crystal silicon thin film 12, n-type doping is carried out to extension monocrystalline silicon thin film 12, as photocell
Emitter region, periodical p-type doping then carried out to N-type epitaxy single-crystal silicon thin film 12, forms P-doped zone 14, n-type doping
Epitaxy single-crystal silicon thin film 12, P-doped zone 14 and superlattice structure 11 constitute the photoelectric PN junction of a superlattice structure,
Base electrode 13 and transmitting region electrode 15 are made respectively on extension monocrystalline silicon thin film 12 and P-doped zone 14, in epitaxy single-crystal
Layer of silicon dioxide layer passivation layer 16 is covered on silicon thin film 12, and has opened a series of electrode contact hole in specific region, is used
In the surface recombination for reducing upper surface, traditional photocell structure is compared, the electrode width of upper surface is very big, on the one hand reduces
The backside reflection of battery, on the other hand reduces the dead resistance of battery, is conducive to improve output performance.Final photocell
It is exported by photoelectric yield pad 17.
Referring to Fig. 4, the nano wire rectangular element of thermoelectric energy collector is produced in the first silicon dioxide layer 26, i.e., hot
It is isolated by the first silicon dioxide layer 26 between electric flux collector and photocell, is opened in the first silicon dioxide layer 26
Hole goes out photronic photoelectric yield pad 17.The nanometer of nano wire rectangular element is made first in the first silicon dioxide layer 26
Thermoelectric pile, nanometer thermoelectric heap include N-type polycrystalline silicon nano line cluster 21, P type polysilicon nanowires cluster 22, metal connecting line 23, poly- first
Base methyl acrylate 24 and thermoelectricity export pad 25.Its B-B ' is as shown in Figure 5 to sectional view.Then it forms sediment on nanometer thermoelectric heap
One layer of second silicon dioxide layer 18 of product, protects nanometer thermoelectric heap, and one piece of metallic plate is covered among nanometer thermoelectric heap and is dissipated
Hot plate 20 has effectively achieved heat dissipation, increases the thermal coupling of nanometer thermoelectric heap and ambient enviroment, the surrounding of nanometer thermoelectric heap
It covers a strata imide layer 19 and plays heat-insulated effect so that there are one temperature differences for the hot junction of thermocouple and cold end, such as
Shown in Fig. 6.Nano wire rectangular element is attached by metal connecting line 23 finally, while utilizing metal connecting line 23 by thermoelectricity
Gesture is exported from thermoelectricity output pad 25.By taking the thermoelectric energy collector that 4 nano wire rectangular element rectangular arrays are constituted as an example,
Its final nanometer thermoelectric heap arrangement figure is as shown in fig. 7, whole cover the second silicon dioxide layer 18, metallic heat radiating plate 20 and gather
Vertical view after imide layer 19 is as shown in figure 8, the C-C ' of Fig. 8 is as shown in Figure 9 to sectional view.
Miniature energy collector 3 based on polysilicon nanowire rectangular array and superlattices photoconductive structure is by nano wire square
Shape unit rectangular array forms, and electric appliance interconnection, nano wire rectangle list are carried out by metal connection 23 between nano wire rectangular element
Nanometer thermoelectric couple in member is constituted the half of thermocouple by N-type polycrystalline silicon nano line cluster 21 and p-type polysilicon nano line cluster 22
Conductor arm, the number of nanowires that polysilicon nanowire cluster contains are 50-200, a diameter of 1-100nm of polysilicon nanowire, height
For 2-10um, connected with metal connecting line 23 between N-type polycrystalline silicon nano line cluster 21 and P type polysilicon nanowires cluster 22；In order to increase
Add the stability of 3 structure of miniature energy collector based on polysilicon nanowire rectangular array and superlattices photoconductive structure, thermoelectricity
Polymethyl methacrylate 24 is filled between idol；In the surface of nanometer thermoelectric heap, it is covered with the second silicon dioxide layer 18 and rises
To the effect of protection and electric isolation, nanometer thermoelectric is occasionally arranged in four modes, and one block of metal is covered among nanometer thermoelectric heap
Plate heat sink 20 has effectively achieved heat dissipation, increases the thermal coupling of nanometer thermoelectric heap and ambient enviroment, nanometer thermoelectric heap
Surrounding covers a strata imide layer 19 and plays heat-insulated effect so that there are one temperature for the hot junction of nanometer thermoelectric idol and cold end
Degree is poor, and being based ultimately upon Seebeck effect has thermoelectrical potential to be exported from thermoelectricity output pad 25.
The operation principle of miniature energy collector based on polysilicon nanowire rectangular array and superlattices photoconductive structure is such as
Under：When will be based on the metallic heat radiating plate of the miniature energy collector of polysilicon nanowire rectangular array and superlattices photoconductive structure
20 when being attached to the surface of radio-frequency receiving-transmitting component 1, and heat can be from based on polysilicon nanowire rectangular array and superlattices photoconductive structure
The metallic heat radiating plate 20 of miniature energy collector inject, after nanometer thermoelectric heap, be finally discharged from cold end face, and in base
In forming certain Temperature Distribution on the miniature energy collector of polysilicon nanowire rectangular array and superlattices photoconductive structure.
Since there are certain thermal resistances for nanometer thermoelectric heap, the corresponding temperature difference is will produce between the cold and hot node of nanometer thermoelectric heap, is based on
The thermoelectricity output pad 25 at Seebeck effect nanometer thermoelectric heap both ends can export the potential directly proportional to the temperature difference；Simultaneously based on more
The photocell of the miniature energy collector of crystal silicon nano wire rectangular array and superlattices photoconductive structure can collect the luminous energy in environment
And it is converted to electric energy, exporting pad 17 by photo-electric is exported.The electric signal of output is passed through into DC-DC conversion modules 4
It is converted into direct current signal to be stored in rechargeable battery 6, for powering to wireless sensing node 5, finally realizes green communications.
The system of the miniature energy collector based on polysilicon nanowire rectangular array and superlattices photoconductive structure of the present invention
Preparation Method is as follows：
1) select N-type silicon chip 7 as substrate, the doping concentration of phosphorus is 1 × 1015cm-3, resistivity is about 5 Ω cm, is made
Preceding carry out twin polishing, and impregnate in a solution of hydrofluoric acid, remove the impurity such as metallic particles；
2) using plasma enhancing chemical vapor deposition (PECDV) technique making non-crystal silicon carbon SiClx is received on substrate
Rice superlattice structure 11, non-crystalline silicon and carborundum films are alternately arranged, and thickness is respectively 2nm and 4nm；
3) in one layer of monocrystalline silicon thin film 12 of the upper surface extension of silicon chip, boron ion diffusing, doping, doping concentration 1 are carried out
×1020cm-3, the areas P+ are formed, as photoelectric PN junction emitter；
4) it uses pecvd process to deposit one layer of silicon nitride, thickness about 200nm, and photoetching to be molded, here using buffering
Hydrofluoric acid removes the silicon nitride of specific region, the window as the injection of P ion below；
5) P ion is injected and is annealed, and the silicon nitride of remaining area is removed with hydrofluoric acid；
6) it uses pecvd process to deposit silica and the photoetching molding of one layer of 100nm, is passivated as silicon dioxide layer
Layer 16, and expose electrode contact region；
7) suede structure 8 is made at 7 back side of N-type silicon chip, then carries out P ion injection, form back of the body electric field structure 10, then
Optic anti-reflective layer is used as using pecvd process deposition silicon nitride film 9；
8) aluminium layer and the photoetching for evaporating one layer of 2 μ m-thick form photronic interdigital electrode, including base electrode 13 and hair
Penetrate region electrode 15；
9) pecvd process is used to deposit the first silicon dioxide layer 26, the electricity as photocell and thermoelectric energy collector
Insulating layer；
10) low-pressure chemical vapor phase deposition (LPCDV) technique is used to grow a layer thickness for 2 μm of polysilicon；
11) it uses LPCVD techniques growth layer of silicon dioxide as mask layer, deep-UV lithography, shape is carried out to polysilicon
At polysilicon nanometer cable architecture；
12) doping of N-type phosphonium ion is carried out to the corresponding region of polysilicon nanowire respectively and p-type boron ion is adulterated, respectively
Form N-type polycrystalline silicon nano line cluster 21 and p-type polysilicon nano line cluster 22；
13) gap between one strata methyl methacrylate 24 of spin coating filling thermocouple, improves the steady of electric generator structure
It is qualitative；
14) layer gold that evaporation a layer thickness is 0.3 μm, stripping method molding, as metal contact wires on nanometer thermoelectric heap
23；
15) two silicon dioxide layer 18 of pecvd process growth regulation is used, thickness is 0.1 μm, as dielectric insulation layer；
16) metallic aluminium that plating a layer thickness is 1 μm, the metallic heat radiating plate 20 as device.
17) polyimide layer 19 that deposit a layer thickness is 1 μm, the nanometer thermoelectric idol outer insulative layer as device.
Distinguish whether be the structure standard it is as follows：
The present invention the miniature energy collector based on polysilicon nanowire rectangular array and superlattices photoconductive structure include
Photocell and thermoelectric energy collector, photocell include N-type silicon substrate 7, suede structure 8, silicon nitride film 9, back of the body electric field structure
10, superlattice structure 11, epitaxy single-crystal silicon thin film 12, base electrode 13, P types doped region 14, transmitting region electrode 15, titanium dioxide
Silicon layer passivation layer 16, photoelectric yield pad 17, thermoelectric energy collector are formed by nano wire rectangular element by rectangular array,
Nano wire rectangular element includes nanometer thermoelectric heap, the second silicon dioxide layer 18, polyimide layer 19, metallic heat radiating plate 20, nanometer
Thermoelectric pile includes N-type polycrystalline silicon nano wire 21, p-type polysilicon nano line cluster 22, metal connecting line 23, polymethyl methacrylate
24 and thermoelectricity export pad 25, photocell and thermoelectric energy collector by the first silicon dioxide layer of protection 26 carry out electricity every
From.Nanometer thermoelectric is occasionally connected in series, and thermoelectrical potential is exported by thermoelectricity output pad 25, and nanometer thermoelectric heap is arranged in four modes,
The centre of nanometer thermoelectric heap covers hot junction heat-conducting layer of the one layer of metallic heat radiating plate 20 as nanometer thermoelectric heap, nanometer thermoelectric heap
Surrounding cover cold end thermal insulation layer of the strata imide layer 19 as nanometer thermoelectric heap.Polymethyl methacrylate 24 is used
The stability of energy harvester structure is improved in gap between filling nanometer thermoelectric idol.Based on polysilicon nanowire rectangle battle array
The miniature energy collector of row and superlattices photoconductive structure using polysilicon nanowire rectangular array and superlattices photoconductive structure as
Generating element, compared with traditional thermoelectricity photovoltaic energy collection device, polysilicon nanowire thermal conductivity is far below conventional bulk,
With higher thermoelectric conversion efficiency, the electric energy of collection is converted into direct current by the energy of collection by DC-DC conversion modules 4
Signal is ultimately stored in rechargeable battery 6.Electricity in rechargeable battery 6 may be implemented to the power supply of wireless sensing node 5, most
Green communications are realized eventually.
Meet conditions above structure be considered as the present invention based on polysilicon nanowire rectangular array and superlattices photoelectricity
The miniature energy collector of structure.
Claims (3)
1. a kind of miniature energy collector based on polysilicon nanowire rectangular array and superlattices photoconductive structure, feature exist
In：The miniature energy collector based on polysilicon nanowire rectangular array and superlattices photoconductive structure include photocell and
Thermoelectric energy collector；Photocell includes N-type silicon substrate (7), suede structure (8), silicon nitride film (9), back of the body electric field structure
(10), superlattice structure (11), epitaxy single-crystal silicon thin film (12), base electrode (13), P-doped zone (14) emit region electrode
(15), silicon dioxide layer passivation layer (16), photoelectric yield pad (17)；Thermoelectric energy collector is by nano wire rectangular element rectangle
Array is constituted, and nano wire rectangular element includes nanometer thermoelectric heap, the second silicon dioxide layer (18), polyimide layer (19), metal
Heat sink (20), nanometer thermoelectric heap include N-type polycrystalline silicon nano line cluster (21), p-type polysilicon nano line cluster (22), metal connecting line
(23), polymethyl methacrylate (24) and thermoelectricity output pad (25)；Photocell and thermoelectric energy collector are by the first titanium dioxide
Silicon protective layer (26) carries out electric isolation, passes through metal connecting line (23) progress electric appliance interconnection between nano wire rectangular element；It collects
Energy by the thermoelectricity of photronic photoelectric yield pad (17) and thermoelectric energy collector export pad (25) connect to DC-DC
Conversion module (4)；The energy harvester major function is the light in the thermal energy and environment for collect radio-frequency receiving-transmitting component amplifiers (1)
It can power to wireless sensing node (5)；It is received based on the miniature energy of polysilicon nanowire rectangular array and superlattices photoconductive structure
The electric energy of collection is converted into DC signal by the energy of collection by storage (3) by DC-DC conversion modules (4), final to store
In rechargeable battery (6), the electricity in rechargeable battery (6) may be implemented to the power supply of wireless sensing node (5)；N-type polycrystalline silicon is received
The number of nanowires that rice noodles cluster (21) and p-type polysilicon nano line cluster (22) contain is 50-200, N-type polycrystalline silicon nano line cluster
(21) it is formed by deep-UV lithography with the polysilicon nanowire of p-type polysilicon nano line cluster (22), a diameter of 1-100nm, height
For 2-10um；Between N-type polycrystalline silicon nano line cluster (21) and p-type polysilicon nano line cluster (22) using metal contact wires (23) into
Row connection.
2. a kind of miniature energy based on polysilicon nanowire rectangular array and superlattices photoconductive structure according to claim 1
Measure collector, it is characterised in that：Filled with poly- between N-type polycrystalline silicon nano line cluster (21) and p-type polysilicon nano line cluster (22)
Methyl methacrylate (24) plays the high stability of energy harvester structure.
3. a kind of miniature energy based on polysilicon nanowire rectangular array and superlattices photoconductive structure according to claim 1
Measure collector, it is characterised in that：The miniature energy based on polysilicon nanowire rectangular array and superlattices photoconductive structure
The photocell of collector is alternately arranged using non-crystalline silicon and nanometer silicon carbide film constitutes superlattice structure (11), photoelectric conversion effect
Rate is higher.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110690846A (en) * | 2019-09-29 | 2020-01-14 | 西南大学 | Photo-thermal-electric conversion device based on inclined silicon nanowires |
| CN116581182A (en) * | 2023-07-12 | 2023-08-11 | 长春理工大学 | Tin oxide cadmium oxide superlattice solar blind detector structure and preparation method thereof |
-
2018
- 2018-03-14 CN CN201810208203.8A patent/CN108511591A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110690846A (en) * | 2019-09-29 | 2020-01-14 | 西南大学 | Photo-thermal-electric conversion device based on inclined silicon nanowires |
| CN116581182A (en) * | 2023-07-12 | 2023-08-11 | 长春理工大学 | Tin oxide cadmium oxide superlattice solar blind detector structure and preparation method thereof |
| CN116581182B (en) * | 2023-07-12 | 2023-09-29 | 长春理工大学 | Tin oxide cadmium oxide superlattice solar blind detector structure and preparation method thereof |
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Application publication date: 20180907 |