CN108493283A - Miniature energy collector based on polysilicon nanometer thin film thermocouple and nanometric PN junctions - Google Patents
Miniature energy collector based on polysilicon nanometer thin film thermocouple and nanometric PN junctions Download PDFInfo
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- CN108493283A CN108493283A CN201810208172.6A CN201810208172A CN108493283A CN 108493283 A CN108493283 A CN 108493283A CN 201810208172 A CN201810208172 A CN 201810208172A CN 108493283 A CN108493283 A CN 108493283A
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The miniature energy collector based on polysilicon nanometer thin film thermocouple and nanometric PN junctions of the present invention, substrate is N-type silicon chip, being made on photronic light-receiving surface has suede structure, the first silicon nitride film and back of the body electric field structure, N-type nanometer injection region and p-type nanometer injection region are alternately arranged, top deposited layer of silicon dioxide layer passivation layer, and open a series of electrode contact hole；The critical piece thermoelectric pile of thermoelectric (al) type energy harvester is to be connected in series by many thermocouples, and each thermocouple is made of N-type polycrystalline silicon nano thin-film and p-type polysilicon nano thin-film；Metal is interconnected as thermoelectric pile using Au between two semiconductor arms, while having made multiple thermoelectric pile output electrodes；In the top of thermoelectric pile, the cavity structure produced is discharged by sacrificial layer, the top of cavity is separated with third silicon nitride film between metallic plate, with thermoelectric pile.
Description
Technical field
The present invention proposes a kind of miniature energy collector based on polysilicon nanometer thin film thermocouple and nanometric PN junctions, belongs to
In the technical field of microelectromechanical systems (MEMS).
Background technology
Solid-state converter part can be used with thermal energy collecting in light energy collection, and without movable member, reliability is high, service life
Long, Maintenance free, when work, not will produce noise, can be respectively used to the occasion of heat source and illumination abundance, be that wireless network senses
The low-power electronic devices such as node and the ideal power source of circuit.Nano material is since there is quantum confinements and phon scattering effect
It answers, the output performance of thermoelectricity photoelectricity can be promoted, extend the application space of device.In addition, multiple kinds of energy collection mode is carried out
Integrated is following development trend, can overcome single collection of energy mode output power deficiency and be easy by environmental disturbances
The drawbacks of.
Invention content
Technical problem:The object of the present invention is to provide a kind of micro- based on polysilicon nanometer thin film thermocouple and nanometric PN junctions
Type energy harvester, nanometric PN junctions and nano thin-film structure are respectively adopted with thermoelectric (al) type energy harvester in photocell, to improve
Output power, and being integrated in on a piece of substrate, can simultaneously in environment thermal energy and luminous energy be collected, the ring around complexity
Under border, two kinds of collection modes can be complementary to one another, collaboration power supply.
Technical solution：In order to solve the above technical problems, the present invention, which proposes one kind, being based on polysilicon nanometer thin film thermocouple
With the miniature energy collector of nanometric PN junctions.Its structure includes mainly photocell and thermoelectric (al) type energy harvester, and two parts are made
Make in on a piece of silicon chip, realizing the single-chip integration of thermoelectricity and photoelectricity, and the electrode of photocell and thermoelectric (al) type energy harvester
Positioned at the same side of silicon chip, convenient for the encapsulation in practical application, the insulation knot using the second silicon nitride film as two parts
Structure avoids electrical short.
Photronic substrate selects the N-type silicon chip of long carrier lifetime, light-receiving surface to use textured inverted pyramid matte
Structure, effect are to reduce the reflection of incident light；The first silicon nitride of antireflection of a layer specific thickness is coated on suede structure
It is thin, reduce bluk recombination and the surface recombination of battery using hydrogen passivation and fixed charge effect；It is made of ion injection method
One N-N+ height is tied, and be otherwise known as back of the body electric field structure, for reducing surface recombination；It is noted as ion using alumina formwork
Enter mask, forms the N-type nanometer injection region being interspersed and p-type nanometer injection region；One layer two is covered above nanometer injection region
Silicon oxide layer passivation layer, and a series of electrode contact hole has been opened, the surface recombination for reducing upper surface, the interdigital electricity of photocell
Pole is covered on electrode contact hole.
Thermoelectric (al) type energy harvester is mainly made of horizontal positioned thermoelectric pile and heat-dissipating metal sheet；Wherein thermoelectric pile be by
Many thermocouples are connected in series, and each thermocouple is made of N-type polycrystalline silicon nano thin-film and p-type polysilicon nano thin-film,
The thickness of polysilicon nanometer thin film is 1-100nm；Metal is interconnected as thermoelectric pile using golden (Au) between two semiconductor arms, because
Cold end is all transmitted to by the hot junction of thermoelectric pile for heat, so thermocouple is in parallel on thermal conduction study, it is electrically in series；For convenience
It tests and avoids partial deviations to lead to the failure of entire device, made multiple thermoelectric pile output electrodes；In the top of thermoelectric pile,
The cavity structure produced is discharged by sacrificial layer, further enhances being thermally isolated between cold and hot both ends；Miniature energy is collected
The cold end of device has effectively achieved heat dissipation by one piece of metallic plate 21, increases the thermal coupling of thermoelectric pile and ambient enviroment, metal
Plate material is aluminium (Al), and third silicon nitride film is separated between thermoelectric pile to realize insulation；Since heat flow path is perpendicular to core
The encapsulation of device in the application is convenient on piece surface.
Photronic operation principle is as follows：When the photon with appropriate energy is incident in photronic PN junction, photon with
It constitutes semi-conducting material interaction and generates electrons and holes, under the electric field action in PN junction region, electronics expands to N-type semiconductor
It dissipates, hole is spread to P-type semiconductor, is gathered in two electrode sections respectively, generates certain potential difference output power simultaneously.Electricity
When the output power of pole, other than photogenerated current, due to output voltage, there is also a knot " dark electricity opposite with photogenerated current
Stream " is output to the difference of the electric current of load actually photogenerated current and dark current.
The operation principle of thermoelectric (al) type energy harvester is as follows：When applying certain temperature difference in energy harvester hot and cold side, heat
Amount can be injected from hot junction face, after thermoelectric pile, be finally discharged from cold end face, and formed centainly on thermoelectric (al) type energy harvester
Temperature Distribution.Since there are certain thermal resistances for thermoelectric pile, the corresponding temperature difference, base will produce between the cold and hot node of thermoelectric pile
The potential directly proportional to the temperature difference can be exported in the both ends of Seebeck effect thermoelectric pile, and power output can be achieved after connection load.
In practical applications, photronic light is face-up for the miniature energy collector, the light being used in environment of accepting,
Due to illumination heat, while as the hot junction face of device, another surface of covered metal plate is affixed on radiator, as device
Cold end；After the energy that photocell and thermoelectric (al) type energy harvester are collected is by DC-DC conversion modules, it is stored in battery, it can
To be arranged in the various wireless sensing nodes power supply on power amplifier periphery.
Advantageous effect：The present invention has the following advantages relative to existing energy harvester：
1. being had using ripe CMOS technology and MEMS technology manufacture, advantage in the miniature energy collector technique of the present invention
It is small, at low cost, can batch micro operations, and can with microelectronic circuit realize single-chip integration；
2. the single-chip integration of two kinds of collection of energy modes of thermoelectricity-photoelectricity is realized, under complicated ambient enviroment, two kinds of collections
Mode can be complementary to one another, collaboration power supply；
3. photocell uses all back-contact electrodes structure, opposite Traditional photovoltaic pool structure to be hindered with no shading loss, low electrode string
With the advantage interconnected convenient for device；
4. incident light can carry out Multiple Scattering in nanometric PN junctions, formed so-called " sunken luminous effect ", to increase light
The absorbed probability of son, and nano wire, to the polarization direction of incident light, incident angle, incident wavelength is also insensitive, causes to receive
There is very strong capture ability in rice injection region to incident light, to improve photronic transfer efficiency；
5. thermoelectric (al) type energy harvester uses hybrid architecture, i.e. heat flow path is perpendicular to chip surface, and current path
It is parallel to chip surface, the encapsulation of energy harvester is simplified perpendicular to the heat flow path of chip surface, and is located at chip plane
Interior thermoelectric pile can be used the making of IC compatible technologies, have higher integration density and larger output voltage density；
6. because of quantum confinement and phonon scattering effect, the thermal conductivity of polysilicon nanometer thin film is far below conventional bulk, carries
The high transfer efficiency of thermoelectric (al) type energy harvester；
7. photocell and thermoelectric (al) type energy harvester are solid state energy converter, without movable member, reliability is high, makes
With long lifespan, Maintenance free, when work, not will produce noise；
8. the complexity that all electrodes of miniature energy collector in same plane, avoid similar via is electrically connected.
Description of the drawings
Fig. 1 is that the present invention is based on the applications of polysilicon nanometer thin film thermocouple and the miniature energy collector of nanometric PN junctions to show
It is intended to；
Fig. 2 is that the present invention is based on the vertical view knots of polysilicon nanometer thin film thermocouple and the miniature energy collector of nanometric PN junctions
Structure schematic diagram；
Fig. 3 is the overlooking structure diagram after the completion of prepared by photocell electrode of the present invention；
Fig. 4 is the overlooking structure diagram after the completion of prepared by thermoelectric (al) type energy harvester electrode of the present invention；
Fig. 5 is that the present invention is based on polysilicon nanometer thin film thermocouple and the miniature energy collector A-A ' of nanometric PN junctions to cuing open
View.
Figure includes：Figure includes：Photocell 1, thermoelectric (al) type energy harvester 2, radiator 3, light-receiving surface 4, DC-DC conversions
Module 5, battery 6, wireless sensing node 7, silicon chip 8, suede structure 9 carry on the back electric field structure 10, and the first silicon nitride is thin by 11, N-type nanometer
Injection zone 12, p-type nanometer injection zone 13, silicon dioxide layer passivation layer 14, photocell interdigital electrode 15, the second silicon nitride are thin
Film 16, N-type polycrystalline silicon nano thin-film 17, p-type polysilicon nano thin-film 18, thermoelectric pile interconnect metal 19, third silicon nitride film
20, metallic plate 21, thermoelectric pile output electrode 22.
Specific implementation mode
The following further describes the specific embodiments of the present invention with reference to the drawings.
Referring to Fig. 1-5, the present invention proposes a kind of miniature energy based on polysilicon nanometer thin film thermocouple and nanometric PN junctions
Measure collector.Its structure includes mainly photocell 1 and thermoelectric (al) type energy harvester 2, and two parts are made in a piece of silicon chip 8
On, the single-chip integration of thermoelectricity and photoelectricity is realized, and the electrode of photocell 1 and thermoelectric (al) type energy harvester 2 is located at the same of silicon chip
Side, convenient for the encapsulation in practical application, the insulation system using the second silicon nitride film 16 as two parts avoids electricity
Short circuit.
The substrate of photocell 1 selects the N-type silicon chip 8 of long carrier lifetime, light-receiving surface 4 to use textured inverted pyramid suede
Face structure 9, effect are to reduce the reflection of incident light；The first nitrogen of antireflection of a layer specific thickness is coated on suede structure 9
SiClx is thin by 11, reduces bluk recombination and the surface recombination of battery using hydrogen passivation and fixed charge effect；Using ion implanting side
Method has made a N-N+ height and has tied, and be otherwise known as back of the body electric field structure 10, for reducing surface recombination；Made using alumina formwork
For ion implantation mask, the N-type nanometer injection region 12 being interspersed and p-type nanometer injection region 13 are formed, is received on alumina formwork
Rice opening diameter is 1-100nm, since incident light can carry out Multiple Scattering in nanostructure, is formed " sunken luminous effect ", to
The absorbed probability of photon is increased, and nano wire is also unwise to the polarization direction of incident light, incident angle and incident wavelength
Sense, causes nanometer injection region to have very strong capture ability to incident light, improves the transfer efficiency of photocell 1；It is injected in nanometer
Covering layer of silicon dioxide floor passivation layer 14 above area, and opened a series of electrode contact hole, the table for reducing upper surface
Face is compound, and photocell interdigital electrode 15 is covered on electrode contact hole, is connected with nanometer injection region, compares traditional photocell knot
The electrode width of structure, upper surface is very big, on the one hand reduces the backside reflection of battery, on the other hand reduces the parasitism electricity of battery
Resistance is conducive to improve output performance.
Thermoelectric (al) type energy harvester 2 is mainly made of horizontal positioned thermoelectric pile and heat-dissipating metal sheet 13；Wherein thermoelectric pile
It is to be connected in series by many thermocouples, and each thermocouple is by N-type polycrystalline silicon nano thin-film 17 and p-type polysilicon nano thin-film
18 are constituted, and the thickness of polysilicon nanometer thin film is 1-100nm, because of quantum confinement and phonon scattering effect, polysilicon nanometer thin film
Thermal conductivity be far below conventional bulk, improve the transfer efficiency of thermoelectric (al) type energy harvester；It is adopted between two semiconductor arms
Au is used to interconnect metal 19 as thermoelectric pile, because heat is all transmitted to cold end by the hot junction of thermoelectric pile, thermocouple is conducting heat
It is in parallel on, it is electrically in series；In order to facilitate the failure for testing and avoiding partial deviations to lead to entire device, multiple heat have been made
Pile output electrode 22；In the top of thermoelectric pile, the cavity structure produced is discharged by sacrificial layer, is further enhanced cold and hot
Being thermally isolated between both ends；The cold end of miniature energy collector 2 has effectively achieved heat dissipation by one piece of metallic plate 21, increases
The thermal coupling of thermoelectric pile and ambient enviroment, 21 material of metallic plate be separated between Al, with thermoelectric pile third silicon nitride film 20 with
Realize insulation；Since heat flow path is perpendicular to chip surface, it is convenient for the encapsulation of device in the application.
The operation principle of photocell 1 is as follows：When the photon with appropriate energy is incident in the PN junction of photocell 1, photon
Electrons and holes are generated with semi-conducting material interaction is constituted, under the electric field action in PN junction region, electronics is to N-type semiconductor
Diffusion, hole are spread to P-type semiconductor, are gathered in two electrode sections respectively, generate certain potential difference output power simultaneously.
When electrode output power, other than photogenerated current, due to output voltage, there is also a knot " dark electricity opposite with photogenerated current
Stream " is output to the difference of the electric current of load actually photogenerated current and dark current.
The operation principle of thermoelectric (al) type energy harvester 2 is as follows：When applying certain temperature difference in energy harvester hot and cold side, heat
Amount can be injected from hot junction face, after thermoelectric pile, be finally discharged from cold end face, and form one on thermoelectric (al) type energy harvester 2
Fixed Temperature Distribution.Since there are certain thermal resistances for thermoelectric pile, the corresponding temperature difference is will produce between the cold and hot node of thermoelectric pile,
Both ends based on Seebeck effect thermoelectric pile can export the potential directly proportional to the temperature difference, and power output can be achieved after connection load.
The miniature energy collector in practical applications, as shown in Fig. 1, the light-receiving surface 4 of photocell 1 upward, for connecing
Light in by environment, due to illumination heat, while as the hot junction face of device, another surface of covered metal plate 21 is affixed on scattered
On hot device 3, the cold end as device；The energy that photocell 1 and thermoelectric (al) type energy harvester 2 are collected passes through DC-DC conversion modules 5
Afterwards, it is stored in battery 6, can be the power supply of various wireless sensing nodes 7 for being arranged in power amplifier periphery.
The preparation method of the miniature energy collector based on polysilicon nanometer thin film thermocouple and nanometric PN junctions of the present invention
It is as follows：
1) the N-type fused silicon chip 8 for selecting 4 inches is substrate, and thickness is 350 μm, and crystal orientation is<100>, resistivity isMinority carrier life time is more than 500 μ s；
2) suede structure 9 at the back side is prepared, n-type doping forms and carries on the back electric field structure 10, then mono- layer of silicon nitride of LPCVD is thin, makees
For optic anti-reflective layer；
3) nano modification technique is used to carry out the modification cleaning of surface microcell, nano modification technique (is contained to contain organic base
Amount is 0.1~10%) and the alkaline aqueous solution processing diffusion of size (content be less than 0.1%) after silicon chip, removal silicon chip table
The microdefect and objectionable impurities in face, treatment temperature are 25~85 DEG C, and the time is 30~15 minutes；
4) porous anodic alumina template is prepared using two step anodic oxidation electrochemical processes, is used for photocell nano-array knot
The doping of structure；
5) by the pattern transfer to silicon substrate of porous anodic alumina template, N-type phosphonium ion doping is carried out to silicon chip, is obtained
To the N-type nanometer injection region 12 of photocell nano array structure；
6) by the pattern transfer to silicon substrate of porous anodic alumina template, p-type boron ion doping is carried out to silicon chip, is obtained
To the p-type nanometer injection region 13 of photocell nano array structure；
7) pecvd process is used to deposit silica and the photoetching molding of one layer of 100nm, as silicon dioxide layer passivation layer
14, and expose electrode contact region；
8) aluminium layer and the photoetching for evaporating one layer of 2 μ m-thick, form photocell interdigital electrode 15；
9) using plasma enhancing chemical vapor deposition (PECVD) technique deposits the second silicon nitride film 16, as electricity
Learn insulating layer；
10) low-pressure chemical vapor phase deposition (LPCDV) technique is used to grow a layer thickness thin for the polysilicon nanometer of 1-100nm
Film；
11) doping of N-type phosphonium ion is carried out to polysilicon nanometer thin film corresponding region respectively and p-type boron ion is adulterated, then
Photoetching is carried out, dry etching is carried out using thick photoresist as mask plate, N-type polycrystalline silicon nano thin-film 17 is respectively formed and p-type is more
Crystal silicon nano thin-film 18；
12) layer gold that evaporation a layer thickness is 0.2 μm, stripping method molding form thermoelectric pile interconnection metal 19 and thermoelectric pile
Output electrode 22；
13) three silicon nitride film 20 of pecvd process growth regulation is used, thickness is 0.1 μm, as dielectric insulation layer and protection
Layer；
14) polyimides that spin coating a layer thickness is 3 μm, and photoetching is molded, as sacrificial layer；
15) aluminium that plating a layer thickness is 1 μm, photoetching molding, the heat-dissipating metal sheet 21 as device；
16) after being cleaned by ultrasonic, silicon chip is put into acetone 10 minutes, then is immediately placed in ethyl alcohol 10 minutes, and release polyimides is sacrificial
Domestic animal layer, finally washes by water and dries.
Distinguish whether be the structure standard it is as follows：
The miniature energy collector based on polysilicon nanometer thin film thermocouple and nanometric PN junctions of the present invention, substrate is N-type
Silicon chip 8, making on photronic light-receiving surface 4 has suede structure 9, the first silicon nitride film 11 and back of the body electric field structure 10, using oxygen
Change aluminum alloy pattern plate as ion implantation mask, forms N-type nanometer injection region 12 and p-type nanometer injection region 13, enter in nanometric PN junctions
Multiple Scattering can be carried out by penetrating light, be formed so-called " sunken luminous effect ", to increase the absorbed probability of photon, and nano wire
To the polarization direction of incident light, incident angle, incident wavelength is also insensitive, and nanometer injection region is caused to have very strong catch to incident light
Capacitation power, to improve photronic transfer efficiency；Nanometer deposited layer of silicon dioxide layer passivation layer 16 on injection region, and
A series of electrode contact hole has been opened, has been connected with photronic photocell interdigital electrode 15；Thermoelectric (al) type energy harvester 2 and photoelectricity
It is separated with the second silicon nitride film 16 between pond, critical piece thermoelectric pile is connected in series by many thermocouples, and each thermoelectricity
Even to be made of again N-type polycrystalline silicon nano thin-film 17 and p-type polysilicon nano thin-film 18, the thickness of polysilicon nanometer thin film is 1-
100nm, because of quantum confinement and phonon scattering effect, the thermal conductivity of polysilicon nanometer thin film is far below conventional bulk, improves
The transfer efficiency of thermoelectric (al) type energy harvester；Metal 19 is interconnected as thermoelectric pile using Au between two semiconductor arms, is made simultaneously
Multiple thermoelectric pile output electrodes 22 are made；In the top of thermoelectric pile, the cavity structure produced is discharged by sacrificial layer, cavity
Top is metallic plate 21, and third silicon nitride film 20 is separated between thermoelectric pile.
Meet conditions above structure be considered as the present invention based on polysilicon nanometer thin film thermocouple and nanometric PN junctions
Miniature energy collector.
Claims (2)
1. a kind of miniature energy collector based on polysilicon nanometer thin film thermocouple and nanometric PN junctions, it is characterized in that：This is miniature
Energy harvester is by (2) two part structures of photocell (11) and thermoelectric (al) type energy harvester for being made in same N-type silicon chip (8)
It is separated with the second silicon nitride film (16) at, centre, on the light-receiving surface (4) of silicon chip (8), making has suede structure (9), the first nitridation
Silicon thin film (11) and back of the body electric field structure (10)；N-type nanometer injection region (12) and p-type nanometer injection region (13) are alternately distributed, nanometer
It deposited layer of silicon dioxide layer passivation layer (14), the electrode contact hole on silicon dioxide layer passivation layer (14) and light on injection region
The photocell interdigital electrode (15) of battery is connected；The critical piece of thermoelectric (al) type energy harvester (2) is thermoelectric pile, thermoelectric pile one end
Top positioned at photocell interdigital electrode (15), the other end is located at the gap location of photocell interdigital electrode (15), by many thermoelectricity
It is occasionally connected in series, thermoelectric pile surrounding has made multiple thermoelectric pile output electrodes (22)；In the top of thermoelectric pile, released by sacrificial layer
The cavity structure produced is put, the top of cavity is metallic plate (21), and third silicon nitride film (20) is separated between thermoelectric pile；
N-type nanometer injection region (12) and p-type nanometer injection region (13) use alumina formwork as ion implantation mask, alumina formwork
Upper nanometer opening diameter is 1-100nm, and nanometer size effect makes photocell (1) possess excellent light sensitivity, photoelectric characteristic, high electricity
Conductance, the high absorption coefficient of light and high optical band gap, and photoconduction decay under illumination condition it is smaller, to improve photocell
(1) efficiency；The thermoelectric pile of thermoelectric (al) type energy harvester (2) is by N-type polycrystalline silicon nano thin-film (17) and p-type polysilicon nanometer
Film (18) is connected in series, and N-type polycrystalline silicon nano thin-film (17) and p-type polysilicon nano thin-film (18) are grown by epitaxy technology
It forms, thickness 1-100nm, because of quantum confinement and phonon scattering effect, N-type polycrystalline silicon nano thin-film (17) and p-type polysilicon
The thermal conductivity of nano thin-film (18) is far below conventional bulk, improves the transfer efficiency of thermoelectric (al) type energy harvester (2).
2. according to claim 1 a kind of based on polysilicon nanometer thin film thermocouple and the collection of the miniature energy of nanometric PN junctions
Device, it is characterized in that：Photocell interdigital electrode (15) and metallic plate (21) material are Al, N-type polycrystalline silicon nano thin-film (17) and p-type
Polysilicon nanometer thin film (18) is using Au as thermoelectric pile interconnection metal (19).
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115078290A (en) * | 2022-07-21 | 2022-09-20 | 无锡芯感智半导体有限公司 | Gas sensor chip suitable for NDIR principle and preparation method thereof |
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2018
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115078290A (en) * | 2022-07-21 | 2022-09-20 | 无锡芯感智半导体有限公司 | Gas sensor chip suitable for NDIR principle and preparation method thereof |
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