CN108520873B - Serial L ED chip assembly and assembling method thereof - Google Patents
Serial L ED chip assembly and assembling method thereof Download PDFInfo
- Publication number
- CN108520873B CN108520873B CN201810405446.0A CN201810405446A CN108520873B CN 108520873 B CN108520873 B CN 108520873B CN 201810405446 A CN201810405446 A CN 201810405446A CN 108520873 B CN108520873 B CN 108520873B
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- substrate
- light emitters
- colloid
- chip assembly
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims description 38
- 239000000084 colloidal system Substances 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000000465 moulding Methods 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a tandem L ED chip component and an assembly method thereof, belonging to the field of photoelectric technology and solving the problem of poor stability in the prior art.
Description
Technical Field
The invention belongs to the technical field of photoelectricity, and relates to a serial L ED chip assembly and an assembly method thereof.
Background
L ED chip is an important part of L ED lamp, in order to improve the luminous effect, several L ED chips are connected in series.
The conventional L ED lamp is usually formed by connecting L ED chips on a slotted ceramic substrate, and connecting grooves for connecting L ED chips are required on the ceramic substrate, which results in high cost and poor heat dissipation.
Disclosure of Invention
A first object of the present invention is to provide a serial L ED chip module with a compact structure and a good heat dissipation effect.
The second objective of the present invention is to provide an assembling method of the above tandem type L ED chip assembly.
The first object of the present invention can be achieved by the following technical solutions:
a serial L ED chip module comprises a substrate and L ED light emitters, wherein the substrate is made of metal material, a plurality of L ED light emitters are fixed on the substrate, and a plurality of L ED light emitters are connected in series.
The metal substrate can improve the heat dissipation effect of the whole assembly, and meanwhile, the L ED light emitters connected in series effectively improve the lighting effect of the assembly.
In the serial L ED chip module, the substrate is made of copper.
In the above tandem L ED chip assembly, the substrate is made of aluminum alloy.
In the serial L ED chip module, one side of the L ED light emitter is a planar connection surface, and the other side of the L ED light emitter is a P-N junction, and the connection surface is fixedly connected to the substrate.
The second purpose of the invention is realized by the following technical scheme:
a method of assembling a serial L ED chip assembly, the method comprising the steps of:
A. preparing, namely storing L ED light emitters to be assembled for later use, selecting high-temperature films corresponding to the number of positioning holes, and selecting a metal substrate for later use;
B. initially installing, namely embedding P-N junctions of spare L ED light emitters into positioning holes of a high-temperature film, and connecting positive electrodes and negative electrodes of two adjacent L ED light emitters;
C. coating, namely uniformly coating the L ED light emitter with the colloid, and coating the L ED light emitter connection surface with the colloid;
D. connecting, namely attaching a standby substrate to the high-temperature film, and connecting the substrate with the connection surfaces of all L ED light emitters through the colloid;
E. and molding, namely after the colloid is dried, detaching the substrate from the high-temperature film, and connecting a plurality of L ED light emitters in series on the substrate stably through the dried colloid.
The colloid in the molten state has a relatively high temperature, and is stably supported by the high-temperature film.
And after the colloid is dried, the L ED light emitter is stably connected on the substrate under the action of the colloid, and the finished series L ED chip component is obtained.
Of course, the finished tandem L ED chip assembly can be separated from the high temperature film by applying external force.
In the assembly method of the tandem type L ED chip assembly, the high temperature film in the step A is a polyimide film.
The membrane made of the material has good insulating property and high temperature resistance.
In the assembly method of the serial L ED chip assembly, the positioning holes of the substrate are matched with the L ED light emitter P-N junctions in the step B.
Such a structure can stably position the L ED light emitter at the corresponding positioning hole.
In the above method for assembling serial L ED chip assemblies, two adjacent L ED light emitters are connected in series by wires in step B.
In the assembly method of the serial L ED chip assembly, in the step C, the colloid is coated on the connecting surface and the edge of the L ED light emitter.
In the method for assembling the tandem type L ED chip assembly, the thickness of the colloid in the step C is 150-230 μm.
Compared with the prior art, the series L ED chip module has compact structure and good heat dissipation effect because the L ED light emitters are connected in series and connected on the substrate made of metal material.
Meanwhile, the assembly method of the serial L ED chip component adopts the high-temperature film which has two functions, namely, one is used for blocking the colloid, and the other is used for positioning the L ED illuminator, so that the L ED illuminator can be stably connected on the substrate, and the process is easy to implement and simple.
Drawings
FIG. 1 is a schematic cross-sectional view of the present series L ED chip assembly.
FIG. 2 is a schematic diagram of the structure of a tandem L ED chip module in which a high temperature film is connected to a tandem L ED chip module.
In the figure, 1, a substrate, 2, L ED light emitters, 2a, a connecting surface, 2b, a P-N junction, 3, a colloid, 4, a high-temperature film, 4a and a positioning hole are arranged.
Detailed Description
As shown in fig. 1, the serial L ED chip module includes a substrate made of metal material and L ED light emitters, wherein the L ED light emitters are several and are all fixed on the substrate, and the L ED light emitters are connected in series.
The substrate is made of copper material.
The substrate is made of aluminum alloy material.
One side of the L ED light emitter is a planar connection surface, the other side of the L ED light emitter is a P-N junction, and the connection surface is fixedly connected with the substrate.
As shown in fig. 2, the assembly method of the serial L ED chip assembly includes the following steps:
A. preparing, namely storing L ED light emitters to be assembled for later use, selecting high-temperature films corresponding to the number of positioning holes, and selecting a metal substrate for later use;
in this embodiment, the high temperature film is a polyimide film.
B. Initially installing, namely embedding P-N junctions of spare L ED light emitters into positioning holes of a high-temperature film, and connecting positive electrodes and negative electrodes of two adjacent L ED light emitters;
in this embodiment, the positioning holes of the substrate are matched with the P-N junctions of the L ED emitters, and two adjacent L ED emitters are connected in series by a wire.
C. Coating, namely uniformly coating the L ED light emitter with the colloid, and coating the L ED light emitter connection surface with the colloid;
in this embodiment, the adhesive is coated on the connection surface and the edge of the L ED light emitter, and the adhesive is an insulating adhesive, such as a polybutadiene material.
The thickness of the colloid is 150-230 μm.
D. Connecting, namely attaching a standby substrate to the high-temperature film, and connecting the substrate with the connection surfaces of all L ED light emitters through the colloid;
E. and molding, namely after the colloid is dried, detaching the substrate from the high-temperature film, and connecting a plurality of L ED light emitters in series on the substrate stably through the dried colloid.
The metal substrate can improve the heat dissipation effect of the whole assembly, and meanwhile, the L ED light emitters connected in series effectively improve the lighting effect of the assembly.
Specifically, the colloid in a molten state has a relatively high temperature, and is stably supported by the high-temperature film.
And after the colloid is dried, the L ED light emitter is stably connected on the substrate under the action of the colloid, and the finished series L ED chip component is obtained.
Of course, the finished tandem L ED chip assembly can be separated from the high temperature film by applying external force.
Claims (6)
1. A method of assembling a serial L ED chip assembly, the method comprising the steps of:
A. preparing, namely storing L ED light emitters to be assembled for later use, selecting high-temperature films corresponding to the number of positioning holes, and selecting a metal substrate for later use;
B. initially installing, namely embedding P-N junctions of spare L ED light emitters into positioning holes of a high-temperature film, and connecting positive electrodes and negative electrodes of two adjacent L ED light emitters;
C. coating, namely uniformly coating the L ED light emitter with the colloid, and coating the L ED light emitter connection surface with the colloid;
D. connecting, namely attaching a standby substrate to the high-temperature film, and connecting the substrate with the connection surfaces of all L ED light emitters through the colloid;
E. and molding, namely after the colloid is dried, detaching the substrate from the high-temperature film, and connecting a plurality of L ED light emitters in series on the substrate stably through the dried colloid.
2. The method of assembling a tandem L ED chip assembly according to claim 1, wherein the high temperature film in step A is a polyimide film.
3. The method of assembling a tandem L ED chip assembly according to claim 1, wherein the positioning holes of the substrate in step B are matched to L ED light emitter P-N junctions.
4. The method of assembling a serial L ED chip assembly of claim 1, wherein two adjacent L ED light emitters are connected in series by a wire in step B.
5. The method of assembling a serial L ED chip assembly as claimed in claim 1, wherein the step C glue is coated on the connecting surface and edges of L ED light emitters.
6. The method of assembling a tandem L ED chip assembly according to claim 1, wherein the gel in step C has a thickness of 150-230 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810405446.0A CN108520873B (en) | 2018-04-29 | 2018-04-29 | Serial L ED chip assembly and assembling method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810405446.0A CN108520873B (en) | 2018-04-29 | 2018-04-29 | Serial L ED chip assembly and assembling method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108520873A CN108520873A (en) | 2018-09-11 |
| CN108520873B true CN108520873B (en) | 2020-07-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810405446.0A Active CN108520873B (en) | 2018-04-29 | 2018-04-29 | Serial L ED chip assembly and assembling method thereof |
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| Country | Link |
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| CN (1) | CN108520873B (en) |
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|---|---|---|---|---|
| JP2004335629A (en) * | 2003-05-06 | 2004-11-25 | Sony Corp | Chip-like electronic component and manufacturing method thereof, pseudo wafer used for manufacturing the same, and manufacturing method thereof |
| CN103515368A (en) * | 2012-06-29 | 2014-01-15 | 展晶科技(深圳)有限公司 | Encapsulating method of light emitting diode |
| TW201447167A (en) * | 2013-06-11 | 2014-12-16 | Epistar Corp | Light emitting device |
| CN104752583A (en) * | 2013-12-31 | 2015-07-01 | 展晶科技(深圳)有限公司 | Light emitting diode packaging method |
| CN105895785A (en) * | 2016-04-25 | 2016-08-24 | 湘能华磊光电股份有限公司 | Optical source assembly structure of flip LED chip integrated package and manufacturing method thereof |
| CN106449939A (en) * | 2016-10-18 | 2017-02-22 | 湘能华磊光电股份有限公司 | Structure of CSP chip with simplified upside-down-mounted LED structure and production method thereof |
| CN106688115A (en) * | 2014-09-12 | 2017-05-17 | 世迈克琉明有限公司 | Method for manufacturing semiconductor light-emitting device |
| CN106960821A (en) * | 2017-03-14 | 2017-07-18 | 华进半导体封装先导技术研发中心有限公司 | A kind of LED component and preparation method thereof |
-
2018
- 2018-04-29 CN CN201810405446.0A patent/CN108520873B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004335629A (en) * | 2003-05-06 | 2004-11-25 | Sony Corp | Chip-like electronic component and manufacturing method thereof, pseudo wafer used for manufacturing the same, and manufacturing method thereof |
| CN103515368A (en) * | 2012-06-29 | 2014-01-15 | 展晶科技(深圳)有限公司 | Encapsulating method of light emitting diode |
| TW201447167A (en) * | 2013-06-11 | 2014-12-16 | Epistar Corp | Light emitting device |
| CN104752583A (en) * | 2013-12-31 | 2015-07-01 | 展晶科技(深圳)有限公司 | Light emitting diode packaging method |
| CN106688115A (en) * | 2014-09-12 | 2017-05-17 | 世迈克琉明有限公司 | Method for manufacturing semiconductor light-emitting device |
| CN105895785A (en) * | 2016-04-25 | 2016-08-24 | 湘能华磊光电股份有限公司 | Optical source assembly structure of flip LED chip integrated package and manufacturing method thereof |
| CN106449939A (en) * | 2016-10-18 | 2017-02-22 | 湘能华磊光电股份有限公司 | Structure of CSP chip with simplified upside-down-mounted LED structure and production method thereof |
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| Publication number | Publication date |
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| CN108520873A (en) | 2018-09-11 |
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