CN108428665A - 一种叠层芯片集成封装工艺 - Google Patents
一种叠层芯片集成封装工艺 Download PDFInfo
- Publication number
- CN108428665A CN108428665A CN201810309452.6A CN201810309452A CN108428665A CN 108428665 A CN108428665 A CN 108428665A CN 201810309452 A CN201810309452 A CN 201810309452A CN 108428665 A CN108428665 A CN 108428665A
- Authority
- CN
- China
- Prior art keywords
- layer
- chip
- hole
- packaging technology
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012536 packaging technology Methods 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 239000010410 layer Substances 0.000 claims description 111
- 229920002120 photoresistant polymer Polymers 0.000 claims description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 27
- 229910052802 copper Inorganic materials 0.000 claims description 27
- 239000010949 copper Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 26
- 238000005553 drilling Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000002356 single layer Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000000608 laser ablation Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 241001074085 Scophthalmus aquosus Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810309452.6A CN108428665B (zh) | 2018-04-09 | 2018-04-09 | 一种叠层芯片集成封装工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810309452.6A CN108428665B (zh) | 2018-04-09 | 2018-04-09 | 一种叠层芯片集成封装工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108428665A true CN108428665A (zh) | 2018-08-21 |
CN108428665B CN108428665B (zh) | 2020-10-30 |
Family
ID=63160592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810309452.6A Active CN108428665B (zh) | 2018-04-09 | 2018-04-09 | 一种叠层芯片集成封装工艺 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108428665B (zh) |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080038874A1 (en) * | 2006-08-11 | 2008-02-14 | Megica Corporation | Chip package and method for fabricating the same |
CN101345231A (zh) * | 2007-07-12 | 2009-01-14 | 东部高科股份有限公司 | 半导体芯片器件及其制造方法和包括其的堆叠封装 |
CN102569173A (zh) * | 2010-12-03 | 2012-07-11 | 三星电子株式会社 | 制造半导体装置的方法 |
CN104752320A (zh) * | 2013-12-27 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
CN104835808A (zh) * | 2015-03-16 | 2015-08-12 | 苏州晶方半导体科技股份有限公司 | 芯片封装方法及芯片封装结构 |
CN105097728A (zh) * | 2015-06-30 | 2015-11-25 | 南通富士通微电子股份有限公司 | 封装结构 |
CN105140191A (zh) * | 2015-09-17 | 2015-12-09 | 中芯长电半导体(江阴)有限公司 | 一种封装结构及再分布引线层的制作方法 |
CN106206337A (zh) * | 2015-05-29 | 2016-12-07 | 株式会社东芝 | 半导体装置及半导体装置的制造方法 |
CN106469718A (zh) * | 2015-08-19 | 2017-03-01 | 台湾积体电路制造股份有限公司 | 三维集成电路结构和接合结构 |
CN106560920A (zh) * | 2015-10-02 | 2017-04-12 | 台湾积体电路制造股份有限公司 | 具有超厚金属的半导体结构和制造方法 |
TW201733041A (zh) * | 2016-03-04 | 2017-09-16 | 力成科技股份有限公司 | 具矽穿孔連續型態之晶圓級晶片尺寸封裝構造及其製造方法 |
-
2018
- 2018-04-09 CN CN201810309452.6A patent/CN108428665B/zh active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080038874A1 (en) * | 2006-08-11 | 2008-02-14 | Megica Corporation | Chip package and method for fabricating the same |
CN101345231A (zh) * | 2007-07-12 | 2009-01-14 | 东部高科股份有限公司 | 半导体芯片器件及其制造方法和包括其的堆叠封装 |
CN102569173A (zh) * | 2010-12-03 | 2012-07-11 | 三星电子株式会社 | 制造半导体装置的方法 |
CN104752320A (zh) * | 2013-12-27 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
CN104835808A (zh) * | 2015-03-16 | 2015-08-12 | 苏州晶方半导体科技股份有限公司 | 芯片封装方法及芯片封装结构 |
CN106206337A (zh) * | 2015-05-29 | 2016-12-07 | 株式会社东芝 | 半导体装置及半导体装置的制造方法 |
CN105097728A (zh) * | 2015-06-30 | 2015-11-25 | 南通富士通微电子股份有限公司 | 封装结构 |
CN106469718A (zh) * | 2015-08-19 | 2017-03-01 | 台湾积体电路制造股份有限公司 | 三维集成电路结构和接合结构 |
CN105140191A (zh) * | 2015-09-17 | 2015-12-09 | 中芯长电半导体(江阴)有限公司 | 一种封装结构及再分布引线层的制作方法 |
CN106560920A (zh) * | 2015-10-02 | 2017-04-12 | 台湾积体电路制造股份有限公司 | 具有超厚金属的半导体结构和制造方法 |
TW201733041A (zh) * | 2016-03-04 | 2017-09-16 | 力成科技股份有限公司 | 具矽穿孔連續型態之晶圓級晶片尺寸封裝構造及其製造方法 |
Also Published As
Publication number | Publication date |
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CN108428665B (zh) | 2020-10-30 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
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TA01 | Transfer of patent application right |
Effective date of registration: 20201009 Address after: 277300 south side of Keda West Road, Yicheng Development Zone, Zaozhuang City, Shandong Province Applicant after: Shandong Hanxin Technology Co.,Ltd. Address before: 262700 Weifang Institute of science and technology, 1299 golden light street, Shouguang City, Shandong, Weifang Applicant before: Sun Tiantian |
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TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A laminated chip integrated packaging process Effective date of registration: 20220214 Granted publication date: 20201030 Pledgee: Zaozhuang rural commercial bank Limited by Share Ltd. Yicheng sub branch Pledgor: Shandong Hanxin Technology Co.,Ltd. Registration number: Y2022980001543 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230201 Granted publication date: 20201030 Pledgee: Zaozhuang rural commercial bank Limited by Share Ltd. Yicheng sub branch Pledgor: Shandong Hanxin Technology Co.,Ltd. Registration number: Y2022980001543 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: An integrated packaging process for stacked chips Effective date of registration: 20230213 Granted publication date: 20201030 Pledgee: Zaozhuang rural commercial bank Limited by Share Ltd. Yicheng sub branch Pledgor: Shandong Hanxin Technology Co.,Ltd. Registration number: Y2023980032481 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20201030 Pledgee: Zaozhuang rural commercial bank Limited by Share Ltd. Yicheng sub branch Pledgor: Shandong Hanxin Technology Co.,Ltd. Registration number: Y2023980032481 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right |