CN108417534B - 一种功率元件的保护器件及其制作方法 - Google Patents
一种功率元件的保护器件及其制作方法 Download PDFInfo
- Publication number
- CN108417534B CN108417534B CN201810257531.7A CN201810257531A CN108417534B CN 108417534 B CN108417534 B CN 108417534B CN 201810257531 A CN201810257531 A CN 201810257531A CN 108417534 B CN108417534 B CN 108417534B
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- Prior art keywords
- layer
- silicon oxide
- type epitaxial
- epitaxial layer
- forming
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 133
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000002161 passivation Methods 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 238000004806 packaging method and process Methods 0.000 abstract description 6
- 230000010354 integration Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 19
- 230000001052 transient effect Effects 0.000 description 10
- 230000003071 parasitic effect Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 230000001629 suppression Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
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CN201810257531.7A CN108417534B (zh) | 2018-03-27 | 2018-03-27 | 一种功率元件的保护器件及其制作方法 |
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CN201810257531.7A CN108417534B (zh) | 2018-03-27 | 2018-03-27 | 一种功率元件的保护器件及其制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN108417534A CN108417534A (zh) | 2018-08-17 |
CN108417534B true CN108417534B (zh) | 2020-09-04 |
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CN201810257531.7A Active CN108417534B (zh) | 2018-03-27 | 2018-03-27 | 一种功率元件的保护器件及其制作方法 |
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CN (1) | CN108417534B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108962854A (zh) * | 2018-07-23 | 2018-12-07 | 深圳市诚朗科技有限公司 | 功率器件保护芯片及其制造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101312157A (zh) * | 2007-05-24 | 2008-11-26 | 英飞凌科技股份公司 | 用来制造保护结构的方法 |
CN105261616A (zh) * | 2015-09-22 | 2016-01-20 | 矽力杰半导体技术(杭州)有限公司 | 瞬态电压抑制器及其制造方法 |
CN106206720A (zh) * | 2015-05-05 | 2016-12-07 | 北大方正集团有限公司 | 一种低栅漏电容沟槽型功率器件及其制造方法 |
CN107204361A (zh) * | 2017-05-22 | 2017-09-26 | 安徽富芯微电子有限公司 | 一种低电容双向tvs器件及其制造方法 |
CN107301994A (zh) * | 2017-07-12 | 2017-10-27 | 邓鹏飞 | 瞬态电压抑制器及其制作方法 |
CN206742245U (zh) * | 2017-03-20 | 2017-12-12 | 苏州矽航半导体有限公司 | 一种双向对称的tvs二极管 |
-
2018
- 2018-03-27 CN CN201810257531.7A patent/CN108417534B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101312157A (zh) * | 2007-05-24 | 2008-11-26 | 英飞凌科技股份公司 | 用来制造保护结构的方法 |
CN106206720A (zh) * | 2015-05-05 | 2016-12-07 | 北大方正集团有限公司 | 一种低栅漏电容沟槽型功率器件及其制造方法 |
CN105261616A (zh) * | 2015-09-22 | 2016-01-20 | 矽力杰半导体技术(杭州)有限公司 | 瞬态电压抑制器及其制造方法 |
CN206742245U (zh) * | 2017-03-20 | 2017-12-12 | 苏州矽航半导体有限公司 | 一种双向对称的tvs二极管 |
CN107204361A (zh) * | 2017-05-22 | 2017-09-26 | 安徽富芯微电子有限公司 | 一种低电容双向tvs器件及其制造方法 |
CN107301994A (zh) * | 2017-07-12 | 2017-10-27 | 邓鹏飞 | 瞬态电压抑制器及其制作方法 |
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Effective date of registration: 20200811 Address after: 211200 Dongping Market Town, Lishui District, Nanjing City, Jiangsu Province Applicant after: Nanjing Hengzhong Information Technology Co.,Ltd. Address before: 300 000 Xindu Building 1-1-505-1, southwest of the intersection of Weijin Road and Wandezhuang Street, Nankai District, Tianjin Applicant before: HUIJIAWANG (TIANJIN) TECHNOLOGY Co.,Ltd. |
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