CN108352403B - 一种提高抗单粒子烧毁能力的槽栅mos器件 - Google Patents

一种提高抗单粒子烧毁能力的槽栅mos器件 Download PDF

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CN108352403B
CN108352403B CN201680057865.9A CN201680057865A CN108352403B CN 108352403 B CN108352403 B CN 108352403B CN 201680057865 A CN201680057865 A CN 201680057865A CN 108352403 B CN108352403 B CN 108352403B
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任敏
林育赐
谢驰
苏志恒
李泽宏
张金平
高巍
张波
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University of Electronic Science and Technology of China
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Abstract

一种应用于半导体领域的提高抗单粒子烧毁能力的槽栅MOS器件，该器件在外延层(3)中设置与源极(10)相连的第二导电类型半导体柱(11)和第二导电类型的电流引导区(13)，藉此改变单粒子效应诱发的电子空穴对径迹，避免发生寄生晶体管开启造成的单粒子烧毁现象，提高槽栅MOS器件的抗单粒子烧毁能力。

Description

一种提高抗单粒子烧毁能力的槽栅MOS器件
技术领域
本发明属于半导体技术领域，涉及一种提高抗单粒子烧毁能力的槽栅MOS器件。
背景技术
随着电力电子技术向高频大功率应用领域的快速发展，VDMOS成为电力电子领域中的不可替代的重要器件之一。该结构器件通常采用二次扩散或离子注入技术形成，是多元胞器件，易于集成，功率密度大，且多子导电，频率特性好。但由于功率VDMOS中存在较大的栅源电容，限制了器件的开关速率。同时，由于VDMOS器件内部存在结型场效应晶体管(JFET)，JFET电阻限制了器件内部饱和电流密度。在低压低功耗MOS器件领域，槽栅MOS器件得到迅速发展。槽栅MOS器件结构与VDMOS相比的优点是沟道密度更大，功耗更低，元胞的尺寸可以做的更小。而且，槽栅MOS没有JFET电阻，使得槽栅MOS的单元密度可以随着工艺特征尺寸的降低而迅速提高。
半导体器件的辐照效应是一个复杂的问题，因为不同类型的辐照，对半导体器件的影响是不同的。主要有四种类型的辐照能够对半导体器件产生辐照效应，它们分别是质子、电子、中子和γ射线。对微电子器件产生重要影响且研究最多的因素主要有γ总剂量辐射、γ剂量率辐射、中子辐射及单粒子效应。
槽栅MOS的单粒子效应主要为单粒子烧毁(SEB)。槽栅MOS的N+源、Pbody区和轻掺杂的N-漂移区之间，存在着一个寄生晶体管结构，它们分别构成寄生晶体管的发射区、基区和集电区。一般情况下，寄生晶体管的发射极和基极通过源极金属实现短路，从而对器件的外部特性不产生影响。在辐照环境下，入射粒子沿着入射径迹在槽栅MOS器件内产生大量电子空穴对，在漂移场和扩散双重作用下，形成瞬发电流。关断时，漏极加正电压，源极接地，空穴电流经由Pbody区流向源极，在基区的寄生电阻上产生压降。当压降增大到一定值时，寄生晶体管导通。当MOS晶体管的漏源电压大于击穿电压时，流过晶体管的电流可以进一步反馈，使得耗尽区的电流密度逐渐上升，造成漏-源间二次击穿，如果结温超过允许值，则引起源-漏结的烧毁。因而减小槽栅MOS器件N+源区下方的电阻，即增大P体区浓度是提高器件抗单粒子烧毁的有效方法。考虑对器件阈值的影响，Pbody区浓度不能太大，对减小VDMOS器件N+源区下方的电阻无明显作用，因此传统结构的抗单粒子烧毁能力很差。
发明内容
本发明所要解决的，就是针对上述问题，提出一种提高抗单粒子烧毁能力的槽栅MOS器件。
本发明的技术方案是：一种提高抗单粒子烧毁能力的槽栅MOS器件，其元胞结构包括从下至上依次层叠设置的漏极金属电极1、第一导电类型半导体衬底2、第一导电类型半导体外延层3和源极金属电极10；所述第一导电类型半导体外延层3的上层具有第二导电类型半导体体区6、第一导电类型半导体源区7、第二导电类型半导体体接触区8和槽栅；所述第二导电类型半导体体接触区8位于第一导电类型半导体源区7之间，且第一导电类型半导体源区7和第二导电类型半导体体接触区8的上表面与源极金属电极10连接；所述第二导电类型半导体体区6位于第一导电类型半导体源区7和第二导电类型半导体体接触区8的正下方，第二导电类型半导体体区6的上表面与第一导电类型半导体源区7和第二导电类型半导体体接触区8的下表面连接；所述槽栅位于第二导电类型半导体体区6和第一导电类型半导体源区7的侧面，所述槽栅由栅介质层5和位于栅介质层5中的栅极导电材料4构成；所述栅极导电材料4的上表面与源极金属电极10之间具有隔离介质9；所述隔离介质9的侧面与第一导电类型半导体源区7的侧面连接，所述栅介质层5的侧面与第二导电类型半导体体区6和第一导电类型半导体源区7的侧面连接；所述栅介质层5的结深大于第二导电类型半导体体区6的结深；其特征在于，所述第一导电类型半导体外延层3中还具有第二导电类型半导体柱11和第二导电类型半导体的电流引导区13，所述第二导电类型半导体柱11的上表面与源极金属电极10的下表面连接，第二导电类型半导体柱11的侧面与栅介质层5连接；所述第二导电类型半导体柱11中还具有金属电极12，所述金属电极12与源极金属电极10的下表面连接；所述第二导电类型电流引导区13的侧面与第二导电类型半导体柱11连接，第二导电类型电流引导区13的上表面与栅介质层5的下表面连接，且第二导电类型电流引导区13的横向宽度大于栅介质层5的横向宽度，第二导电类型电流引导区13超出栅介质层5下表面的部分的横向宽度还大于第一导电类型半导体源区7的横向宽度，同时第二导电类型电流引导区13超出栅介质层5下表面的部分向靠近第二导电类型半导体体区6的方向延伸；所述第二导电类型半导体柱11中含有复合中心以降低载流子寿命。
进一步的，所述第一导电类型半导体外延层3中还具有多个电流引导区，所述电流引导区位于槽栅的下方，且电流引导区的侧面与第二导电类型半导体柱11连接。
本发明的有益效果为，相对于传统结构，本发明极大地提高了槽栅MOS的抗单粒子烧毁能力。
附图说明
图1是实施例1所提供的提高抗单粒子烧毁能力的槽栅MOS的剖面结构示意图；
图2是本发明的槽栅MOS和常规槽栅MOS在单粒子入射在位置a时的电子和空穴流向图；(a)为本发明的结构，(b)为常规结构；
图3是本发明的槽栅MOS和常规槽栅MOS在单粒子入射在位置b时的电子和空穴流向图；(a)为本发明的结构，(b)为常规结构；
图4是本发明的槽栅MOS在单粒子入射在位置c时的电子和空穴流向图；
图5是本发明的槽栅MOS在单粒子入射在位置d时的电子和空穴流向图；
图6是实施例2所提供的提高抗单粒子烧毁能力的槽栅MOS的剖面结构示意图；
图7是实施例3所提供的提高抗单粒子烧毁能力的槽栅MOS的剖面结构示意图；
图8是实施例4所提供的提高抗单粒子烧毁能力的槽栅MOS的剖面结构示意图。
具体实施方式
下面结合附图和实施例，详细描述本发明的技术方案：
实施例1
如图1所示，本例的一种提高抗单粒子烧毁能力的槽栅MOS器件，其元胞结构包括从下至上依次层叠设置的漏极金属电极1、第一导电类型半导体衬底2、第一导电类型半导体外延层3和源极金属电极10；所述第一导电类型半导体外延层3的上层具有第二导电类型半导体体区6、第一导电类型半导体源区7、第二导电类型半导体体接触区8和槽栅；所述第二导电类型半导体体接触区8位于第一导电类型半导体源区7之间，且第一导电类型半导体源区7和第二导电类型半导体体接触区8的上表面与源极金属电极10连接；所述第二导电类型半导体体区6位于第一导电类型半导体源区7和第二导电类型半导体体接触区8的正下方，第二导电类型半导体体区6的上表面与第一导电类型半导体源区7和第二导电类型半导体体接触区8的下表面连接；所述槽栅位于第二导电类型半导体体区6和第一导电类型半导体源区7的侧面，所述槽栅由栅介质层5和位于栅介质层5中的栅极导电材料4构成；所述栅极导电材料4的上表面与源极金属电极10之间具有隔离介质9；所述隔离介质9的侧面与第一导电类型半导体源区7的侧面连接，所述栅介质层5的侧面与第二导电类型半导体体区6和第一导电类型半导体源区7的侧面连接；所述栅介质层5的结深大于第二导电类型半导体体区6的结深；其特征在于，所述第一导电类型半导体外延层3中还具有第二导电类型半导体柱11和第二导电类型半导体的电流引导区13，所述第二导电类型半导体柱11的上表面与源极金属电极10的下表面连接，第二导电类型半导体柱11的侧面与栅介质层5连接；所述第二导电类型半导体柱11中还具有金属电极12，所述金属电极12与源极金属电极10的下表面连接；所述第二导电类型电流引导区13的侧面与第二导电类型半导体柱11连接，第二导电类型电流引导区13的上表面与栅介质层5的下表面连接，且第二导电类型电流引导区13的横向宽度大于栅介质层5的横向宽度，第二导电类型电流引导区13超出栅介质层5下表面的部分的横向宽度还大于第一导电类型半导体源区7的横向宽度，同时第二导电类型电流引导区13超出栅介质层5下表面的部分向靠近第二导电类型半导体体区6的方向延伸；所述第二导电类型半导体柱11中含有复合中心以降低载流子寿命。本例中第一导电类型半导体为N型半导体。
本例的工作原理为：
如图2(b)所示，当单粒子入射在常规槽栅MOS的a位置时，沿着粒子径迹激发出电子空穴对，其中空穴只能通过pbody区流到源极，因此易造成寄生三极管的开启，发生单粒子烧毁。如图2(a)所示，当单粒子入射在本例器件的a位置时，由于与源极相连接的高掺杂的P柱11和空穴电流引导区13的引入，高能粒子激发产生电子-空穴对后，电子被漏极接收，只有少部分的空穴通过P+体区到达源极，大部分空穴在空穴电流引导区13的作用下向低电阻的P柱11移动，由于低电阻的P柱11内具有与源电极10相连的金属电极12，且低电阻的P柱11的载流子寿命较低，因此空穴在P柱11内很快被接收；由于P柱11内不存在n型结构，因此不存在寄生三极管，从而有效避免了寄生三极管的开启。
如图3(b)所示，当单粒子入射在常规槽栅MOS的b位置时，沿着粒子径迹激发出电子空穴对，其中空穴同样只能通过n+源区下的pbody区流到源极，因此易造成寄生三极管的开启，发生单粒子烧毁。如图3(a)所示，当单粒子入射在本例器件的b位置时，由于与源极相连接的高掺杂的P柱11和空穴电流引导区13的引入，高能粒子激发产生电子-空穴对后，电子被漏极接收，几乎所有空穴在空穴电流引导区13的作用下向低电阻的P柱11移动，由于低电阻的P柱11内具有与源电极10相连的金属电极12，且低电阻的P柱11的载流子寿命较低，因此空穴在P柱11内很快被接收；由于P柱11内不存在n型结构，因此不存在寄生三极管，从而有效避免了寄生三极管的开启。
如图4所示当单粒子入射在本例的槽栅MOS的c位置时，几乎全部的空穴都通过空穴电流引导区13和P柱11到达源极，有效的提升了抗单粒子烧毁能力。
如图5所示当单粒子入射在本例的槽栅MOS的d位置时，几乎全部的空穴都通过P柱11到达源极，有效的提升了抗单粒子烧毁能力。
实施例2
如图6所示，本例的结构为在实施例1的基础上，在低电阻的第二导电类型半导体柱11的侧面增加了一条或多条第二导电类型电流引导区，可以进一步提升抗单粒子烧毁能力。
实施例3
如图7所示，本例的结构为在实施例1的基础上，用高掺杂的第二导电类型半导体区和含有大量复合中心的第二导电类型半导体区替换第二导电类型半导体柱11和金属电极12。
实施例4
如图8所示，本例的结构为在实施例1的基础上，用高掺杂的第二导电类型半导体区和位于其中的含有大量复合中心的第二导电类型半导体区替换第二导电类型半导体柱11和金属电极12。

Claims (2)

1.一种提高抗单粒子烧毁能力的槽栅MOS器件，其元胞结构包括从下至上依次层叠设置的漏极金属电极(1)、第一导电类型半导体衬底(2)、第一导电类型半导体外延层(3)和源极金属电极(10)；所述第一导电类型半导体外延层(3)的上层具有第二导电类型半导体体区(6)、第一导电类型半导体源区(7)、第二导电类型半导体体接触区(8)和槽栅；所述第二导电类型半导体体接触区(8)位于第一导电类型半导体源区(7)之间，且第一导电类型半导体源区(7)和第二导电类型半导体体接触区(8)的上表面与源极金属电极(10)连接；所述第二导电类型半导体体区(6)位于第一导电类型半导体源区(7)和第二导电类型半导体体接触区(8)的正下方，第二导电类型半导体体区(6)的上表面与第一导电类型半导体源区(7)和第二导电类型半导体体接触区(8)的下表面连接；所述槽栅位于第二导电类型半导体体区(6)和第一导电类型半导体源区(7)的侧面，所述槽栅由栅介质层(5)和位于栅介质层(5)中的栅极导电材料(4)构成；所述栅极导电材料(4)的上表面与源极金属电极(10)之间具有隔离介质(9)；所述隔离介质(9)的侧面与第一导电类型半导体源区(7)的侧面连接，所述栅介质层(5)的侧面与第二导电类型半导体体区(6)和第一导电类型半导体源区(7)的侧面连接；所述栅介质层(5)的结深大于第二导电类型半导体体区(6)的结深；其特征在于，所述第一导电类型半导体外延层(3)中还具有第二导电类型半导体柱(11)和第二导电类型电流引导区(13)，所述第二导电类型半导体柱(11)的上表面与源极金属电极(10)的下表面连接，第二导电类型半导体柱(11)的侧面与栅介质层(5)连接；所述第二导电类型半导体柱(11)中还具有金属电极(12)，所述金属电极(12)与源极金属电极(10)的下表面连接；所述第二导电类型电流引导区(13)的侧面与第二导电类型半导体柱(11)连接，第二导电类型电流引导区(13)的上表面与栅介质层(5)的下表面连接，且第二导电类型电流引导区(13)的横向宽度大于栅介质层(5)的横向宽度，第二导电类型电流引导区(13)超出栅介质层(5)下表面的部分的横向宽度还大于第一导电类型半导体源区(7)的横向宽度，同时第二导电类型电流引导区(13)超出栅介质层(5)下表面的部分向靠近第二导电类型半导体体区(6)的方向延伸；所述第二导电类型半导体柱(11)中含有复合中心以降低载流子寿命。
2.根据权利要求1所述的一种提高抗单粒子烧毁能力的槽栅MOS器件，其特征在于，所述第一导电类型半导体外延层(3)中还具有多个第二导电类型电流引导区，所述第二导电类型电流引导区位于槽栅的下方，且第二导电类型电流引导区的侧面与第二导电类型半导体柱(11)连接。
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