CN107964684A - A kind of etching method of monocrystalline silicon piece used for solar batteries - Google Patents
A kind of etching method of monocrystalline silicon piece used for solar batteries Download PDFInfo
- Publication number
- CN107964684A CN107964684A CN201711023978.XA CN201711023978A CN107964684A CN 107964684 A CN107964684 A CN 107964684A CN 201711023978 A CN201711023978 A CN 201711023978A CN 107964684 A CN107964684 A CN 107964684A
- Authority
- CN
- China
- Prior art keywords
- wool
- monocrystalline silicon
- making herbs
- silicon piece
- making
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000005530 etching Methods 0.000 title claims abstract description 16
- 210000002268 wool Anatomy 0.000 claims abstract description 33
- 235000008216 herbs Nutrition 0.000 claims abstract description 32
- 239000000654 additive Substances 0.000 claims abstract description 21
- 230000000996 additive effect Effects 0.000 claims abstract description 21
- 239000007788 liquid Substances 0.000 claims abstract description 13
- 229920001577 copolymer Polymers 0.000 claims abstract description 12
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims abstract description 7
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 claims abstract description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229920001223 polyethylene glycol Polymers 0.000 claims abstract description 6
- 235000010234 sodium benzoate Nutrition 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229960001484 edetic acid Drugs 0.000 claims abstract description 5
- 239000004299 sodium benzoate Substances 0.000 claims abstract description 5
- 239000002202 Polyethylene glycol Substances 0.000 claims abstract description 4
- DBBAUITUQRZERI-UHFFFAOYSA-N 2-ethenyl-1h-imidazole;1-ethenylpyrrolidin-2-one Chemical compound C=CC1=NC=CN1.C=CN1CCCC1=O DBBAUITUQRZERI-UHFFFAOYSA-N 0.000 claims abstract 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 23
- 235000011121 sodium hydroxide Nutrition 0.000 claims description 19
- 239000007864 aqueous solution Substances 0.000 claims description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 claims 1
- -1 paratoluenesulfonic acid sodium salt Chemical class 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 4
- 229920001451 polypropylene glycol Polymers 0.000 abstract 1
- 239000003643 water by type Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- 229920002554 vinyl polymer Polymers 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- FRTNIYVUDIHXPG-UHFFFAOYSA-N acetic acid;ethane-1,2-diamine Chemical class CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCN FRTNIYVUDIHXPG-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- MZSDGDXXBZSFTG-UHFFFAOYSA-M sodium;benzenesulfonate Chemical compound [Na+].[O-]S(=O)(=O)C1=CC=CC=C1 MZSDGDXXBZSFTG-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of etching method of monocrystalline silicon piece used for solar batteries, which includes the following steps：The copolymer of vinyl pyrrolidone vinyl imidazole, polyethylene glycol polypropylene glycol ethylene glycol copolymer, ethylenediamine tetra-acetic acid, monoethanolamine, sodium benzoate, paratoluenesulfonic acid sodium salt are dissolved into the water of surplus；By step 1）Obtained flocking additive is added in aqueous slkali, is uniformly mixed；Monocrystalline silicon piece is inserted into step 2）Making herbs into wool is carried out in obtained Woolen-making liquid, the flocking additive in the present invention is added in lye, you can realize quick making herbs into wool effect by this method according to a certain percentage when carrying out making herbs into wool to monocrystalline silicon piece.
Description
Technical field
The present invention relates to solar cell technology neck, more particularly to a kind of making herbs into wool side of monocrystalline silicon piece used for solar batteries
Method.
Background technology
Lye is very fast to [100] etched-facet of monocrystalline silicon piece, and the etching to [111] crystal face is slower.Produce therefrom
Etching rate difference the monocrystalline silicon sheet surface during being etched using lye to silicon chip will be caused to form pyramid
Structure.The structure can effectively reduce reflection of the silicon chip to light.In the preparation process of solar battery sheet, reflection of the silicon chip to light
Lower, absorption of the silicon chip to light is more, and conversion efficiency of solar cell is also higher.The method etched by above-mentioned lye is to monocrystalline
Silicon chip surface progress texturing processing is common increase crystalline silicon to one of effective way of absorption of light.Existing monocrystalline silicon
Process for etching usually requires the making herbs into wool time of 600 s-900 s, less efficient, if can shorten the making herbs into wool time, can effectively carry
High efficiency.The flocking additive of this patent can greatly shorten the making herbs into wool time, and after making herbs into wool monocrystalline silicon surface pyramid
Size and distribution approached with common process.
The content of the invention
The present invention provides a kind of etching method of monocrystalline silicon piece used for solar batteries, and this method is to monocrystalline silicon piece system
During suede, the flocking additive in this patent is added in lye according to a certain percentage, you can realize quick making herbs into wool effect, making herbs into wool
Time is 300s-420s.The etching method includes the following steps：1）The configuration of flocking additive：Successively by ethenyl pyrrolidone
0.5 part of the copolymer of ketone-vinyl imidazole, 1 part of polyethylene glycol-polypropylene glycol-polyethylene glycol copolymer, ethylenediamine tetra-acetic acid
0.5 part, 2 parts of monoethanolamine, 0.1 part of sodium benzoate, 0.25 part of paratoluenesulfonic acid sodium salt is dissolved into 100 parts of water, uniformly mixed；
2）The configuration of Woolen-making liquid：By step 1）Obtained flocking additive is added in sodium hydrate aqueous solution, is uniformly mixed；It is described
Flocking additive and aqueous slkali mass ratio be 0.5:100, the mass fraction of the sodium hydrate aqueous solution is 1%；
3）Monocrystalline silicon piece is inserted into step 2）Making herbs into wool is carried out in obtained Woolen-making liquid, making herbs into wool temperature is 75 ~ 88oC, making herbs into wool time
For 300 ~ 420 s.
Compared with prior art, the invention has the advantages that：
Fine-hair maring using monocrystalline silicon slice method provided by the invention quickly can carry out surface wool manufacturing, making herbs into wool time more conventional work to monocrystalline silicon piece
Skill shortens more than 50%；And flocking additive need not be added during making herbs into wool, reduce cost while making herbs into wool efficiency is improved.
Meanwhile the flocking additive of this patent is non-toxic, non-corrosiveness, to human body and environment non-hazardous.
It is also an advantage of the present invention that：The pyramidal size of matte obtained after quick making herbs into wool is smaller, narrow distribution, to light
Reflectivity it is low, the photoelectric conversion efficiency of assembled obtained solar battery sheet is high.The additive cost is relatively low, efficiency compared with
Height, significant effect, has splendid practical value.
Brief description of the drawings
Fig. 1 is the pyramid 1 for the monocrystalline silicon surface that etching method provided by the invention obtains；
Fig. 2 is the pyramid 2 for the monocrystalline silicon surface that etching method provided by the invention obtains.
Embodiment
Embodiment 1
Processing step is as follows：
1. configure flocking additive：By the copolymer of 0.5 g vinyl pyrrolidones-vinyl imidazole（Number-average molecular weight is）,
1 g polyethylene glycol-polypropylene glycol-polyethylene glycol copolymer, 0.5 g ethylenediamine tetra-acetic acids, 2 g monoethanolamine, 0.1 g benzoic acid
Sodium and 0.25 g paratoluenesulfonic acid sodium salts are dissolved into 100 ml deionized waters successively.
2. configure lye：10 g sodium hydroxides are dissolved in 990 g deionized waters, obtain the hydrogen-oxygen that mass fraction is 1%
Change sodium water solution.
3. the alkaline Woolen-making liquid of configuration：By the lye that the flocking additive obtained by step 1 and step 2 obtain using mass ratio as
0.5:100 are uniformly mixed.
4. process for etching：Monocrystalline silicon piece used for solar batteries is submerged into alkaline Woolen-making liquid prepared by step 3 and carries out surface
Making herbs into wool, making herbs into wool temperature are 85oC, making herbs into wool time are 300 s.
Embodiment 2
Processing step is as follows：
1. configure flocking additive：By the copolymer of 1 g vinyl pyrrolidones-vinyl imidazole, 2 g polyethylene glycols third
Glycol-ethylene glycol copolymer, 0.1 g ethylenediamine tetra-acetic acids, 0.5 g monoethanolamine, 0.05 g sodium benzoates and 0.5 g are to first
Benzene sulfonic acid sodium salt is dissolved into 100 ml deionized waters successively.
2. configure lye：15 g potassium hydroxide are dissolved in 985 g deionized waters, obtain the hydrogen that mass fraction is 1.5%
Aoxidize aqueous solutions of potassium.
3. the alkaline Woolen-making liquid of configuration：By the lye that the flocking additive obtained by step 1 and step 2 obtain using mass ratio as
1:100 are uniformly mixed.
4. process for etching：Monocrystalline silicon piece used for solar batteries is submerged into alkaline Woolen-making liquid prepared by step 3 and carries out surface
Making herbs into wool, making herbs into wool temperature are 75oC, making herbs into wool time are 420 s.
Embodiment 3
Processing step is as follows：
1. configure flocking additive：By the copolymer of 2 g vinyl pyrrolidones-vinyl imidazole, 1 g polyethylene glycols third
Glycol-ethylene glycol copolymer, ethylenediamine tetra-acetic acid 0.5, monoethanolamine 3, sodium benzoate 0.1, paratoluenesulfonic acid sodium salt 0.5g
It is dissolved into successively in 100 ml deionized waters.
2. configure lye：20 g sodium hydroxides are dissolved in 980 g deionized waters, obtain the hydrogen-oxygen that mass fraction is 2%
Change sodium water solution.
3. the alkaline Woolen-making liquid of configuration：By the lye that the flocking additive obtained by step 1 and step 2 obtain using mass ratio as
0.1:100 are uniformly mixed.
4. process for etching：Monocrystalline silicon piece used for solar batteries is submerged into alkaline Woolen-making liquid prepared by step 3 and carries out surface
Making herbs into wool, making herbs into wool temperature are 88oC, making herbs into wool time are 300 s.
Embodiment 4
Processing step is as follows：
1. configure flocking additive：By the copolymer of 1.5 g vinyl pyrrolidones-vinyl imidazole, 1.5 g polyethylene glycol-
Polypropylene glycol-ethylene glycol copolymer, ethylenediamine tetra-acetic acid 0.3, monoethanolamine 2, sodium benzoate 0.2, paratoluenesulfonic acid sodium salt
0.5 is dissolved into 100 ml deionized waters successively.
2. configure lye：30 g sodium hydroxides are dissolved in 970 g deionized waters, obtain the hydrogen-oxygen that mass fraction is 3%
Change sodium water solution.
3. the alkaline Woolen-making liquid of configuration：By the lye that the flocking additive obtained by step 1 and step 2 obtain using mass ratio as
0.2:100 are uniformly mixed.
4. process for etching：Monocrystalline silicon piece used for solar batteries is submerged into alkaline Woolen-making liquid prepared by step 3 and carries out surface
Making herbs into wool, making herbs into wool temperature are 83oC, making herbs into wool time are 400 s.
Tiny, uniform matte pyramid can quickly be obtained using technical solution provided in this embodiment.Such as Fig. 1 and Fig. 2
Shown, obtained size reaches 10um；The method cost is relatively low, and efficiency is higher, significant effect, has splendid practical value.
Claims (1)
- A kind of 1. etching method of monocrystalline silicon piece used for solar batteries, it is characterised in that：The etching method includes the following steps：1） The configuration of flocking additive：Successively by 0.5 part of the copolymer of vinyl pyrrolidone-vinyl imidazole, polyethylene glycol the third two 1 part of alcohol-ethylene glycol copolymer, 0.5 part of ethylenediamine tetra-acetic acid, 2 parts of monoethanolamine, 0.1 part of sodium benzoate, p-methyl benzenesulfonic acid 0.25 part of sodium is dissolved into 100 parts of water, is uniformly mixed；2）The configuration of Woolen-making liquid：By step 1）Obtained flocking additive is added in sodium hydrate aqueous solution, is uniformly mixed；It is described Flocking additive and aqueous slkali mass ratio be 0.5:100, the mass fraction of the sodium hydrate aqueous solution is 1%；3）Monocrystalline silicon piece is inserted into step 2）Making herbs into wool is carried out in obtained Woolen-making liquid, making herbs into wool temperature is 75 ~ 88oC, making herbs into wool time is 300~420 s。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711023978.XA CN107964684A (en) | 2017-10-27 | 2017-10-27 | A kind of etching method of monocrystalline silicon piece used for solar batteries |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711023978.XA CN107964684A (en) | 2017-10-27 | 2017-10-27 | A kind of etching method of monocrystalline silicon piece used for solar batteries |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107964684A true CN107964684A (en) | 2018-04-27 |
Family
ID=62000597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711023978.XA Pending CN107964684A (en) | 2017-10-27 | 2017-10-27 | A kind of etching method of monocrystalline silicon piece used for solar batteries |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107964684A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1902292A (en) * | 2003-11-14 | 2007-01-24 | 昭和电工株式会社 | Polishing composition and polishing method |
| CN102017176A (en) * | 2008-03-25 | 2011-04-13 | 应用材料股份有限公司 | Surface cleaning and texturing process for crystalline solar cells |
| CN102312294A (en) * | 2011-09-08 | 2012-01-11 | 浙江向日葵光能科技股份有限公司 | Additive used for monocrystalline silicon wafer alkaline flocking and application method thereof |
| US20130295712A1 (en) * | 2012-05-03 | 2013-11-07 | Advanced Technology Materials, Inc. | Methods of texturing surfaces for controlled reflection |
| CN103451739A (en) * | 2013-09-04 | 2013-12-18 | 常州时创能源科技有限公司 | Monocrystalline silicon wafer texturizing additive and using method thereof |
| CN106206774A (en) * | 2016-06-30 | 2016-12-07 | 常州时创能源科技有限公司 | Silicon chip is prepared the method that uniform micro-nano is combined matte |
| CN106222756A (en) * | 2016-09-30 | 2016-12-14 | 杭州飞鹿新能源科技有限公司 | Additive and application process thereof for diamond wire cutting fine-hair maring using monocrystalline silicon slice |
| CN106521636A (en) * | 2016-12-30 | 2017-03-22 | 德清丽晶能源科技有限公司 | Single crystal wafer texturing additive |
| CN106835288A (en) * | 2016-12-30 | 2017-06-13 | 德清丽晶能源科技有限公司 | A kind of etching method of monocrystalline silicon piece |
-
2017
- 2017-10-27 CN CN201711023978.XA patent/CN107964684A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1902292A (en) * | 2003-11-14 | 2007-01-24 | 昭和电工株式会社 | Polishing composition and polishing method |
| CN102017176A (en) * | 2008-03-25 | 2011-04-13 | 应用材料股份有限公司 | Surface cleaning and texturing process for crystalline solar cells |
| CN102312294A (en) * | 2011-09-08 | 2012-01-11 | 浙江向日葵光能科技股份有限公司 | Additive used for monocrystalline silicon wafer alkaline flocking and application method thereof |
| US20130295712A1 (en) * | 2012-05-03 | 2013-11-07 | Advanced Technology Materials, Inc. | Methods of texturing surfaces for controlled reflection |
| CN103451739A (en) * | 2013-09-04 | 2013-12-18 | 常州时创能源科技有限公司 | Monocrystalline silicon wafer texturizing additive and using method thereof |
| CN106206774A (en) * | 2016-06-30 | 2016-12-07 | 常州时创能源科技有限公司 | Silicon chip is prepared the method that uniform micro-nano is combined matte |
| CN106222756A (en) * | 2016-09-30 | 2016-12-14 | 杭州飞鹿新能源科技有限公司 | Additive and application process thereof for diamond wire cutting fine-hair maring using monocrystalline silicon slice |
| CN106521636A (en) * | 2016-12-30 | 2017-03-22 | 德清丽晶能源科技有限公司 | Single crystal wafer texturing additive |
| CN106835288A (en) * | 2016-12-30 | 2017-06-13 | 德清丽晶能源科技有限公司 | A kind of etching method of monocrystalline silicon piece |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108054224B (en) | Textured structure of crystalline silicon solar cell and preparation method thereof | |
| CN104576831B (en) | A kind of monocrystalline silicon piece is without alcohol process for etching and flocking additive thereof | |
| CN102181935B (en) | Method and corrosive liquid for making texture surface of monocrystalline silicon | |
| CN103614778A (en) | Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell | |
| CN107338480A (en) | A kind of monocrystalline silicon silicon wafer fine hair making method and its flocking additive | |
| CN104362221B (en) | A kind of preparation method of the polycrystalline silicon solar cell of RIE making herbs into wool | |
| TW201801338A (en) | Method for producing a textured structure of a crystalline silicon solar cell | |
| CN106206774A (en) | Silicon chip is prepared the method that uniform micro-nano is combined matte | |
| CN106098810B (en) | A kind of preparation method of crystal silicon solar energy battery suede structure | |
| CN110416359A (en) | A kind of preparation method of TOPCon structure battery | |
| CN107675263A (en) | The optimization method of monocrystalline silicon pyramid structure matte | |
| CN101818348A (en) | Method for preparing texture of monocrystalline-silicon solar cell by one-step process | |
| CN107919275A (en) | A kind of silicon chip that room temperature etching method and its making herbs into wool form, solar battery sheet and preparation method thereof | |
| CN102703903A (en) | Alkali texture making technology | |
| CN103981575B (en) | Annealing and wool-making method for monocrystalline silicon wafer | |
| CN105405755A (en) | Acidic texturing liquid for silicon wafer pyramid texturing, texturing method and silicon wafer formed in texturing manner through adoption of texturing method | |
| CN102728573B (en) | Process for cleaning damage layer of reactive ion etching (RIE) flocking surface of crystalline silicon | |
| CN102034900A (en) | Texture etching method for quasi-monocrystalline silicon wafer | |
| CN104562211A (en) | Texture surface making method capable of improving conversion efficiency of monocrystal cell | |
| CN106601862A (en) | Texturing method for reducing reflectivity of monocrystalline silicon heterojunction solar cell | |
| CN107964685A (en) | A kind of etching method of monocrystalline silicon piece | |
| CN1983644A (en) | Production of monocrystalline silicon solar battery suede | |
| CN103361739B (en) | A kind of crystal silicon solar batteries implements the method for back of the body polishing in producing | |
| KR101213147B1 (en) | Texturing agent compositions of single crystalline silicon wafers for solar cell and texturing method using the same | |
| CN107964684A (en) | A kind of etching method of monocrystalline silicon piece used for solar batteries |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180427 |