CN104576831B - A kind of monocrystalline silicon piece is without alcohol process for etching and flocking additive thereof - Google Patents
A kind of monocrystalline silicon piece is without alcohol process for etching and flocking additive thereof Download PDFInfo
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- CN104576831B CN104576831B CN201410850205.9A CN201410850205A CN104576831B CN 104576831 B CN104576831 B CN 104576831B CN 201410850205 A CN201410850205 A CN 201410850205A CN 104576831 B CN104576831 B CN 104576831B
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- 239000000654 additive Substances 0.000 title claims abstract description 30
- 230000000996 additive effect Effects 0.000 title claims abstract description 30
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000005530 etching Methods 0.000 title claims abstract description 14
- 235000008216 herbs Nutrition 0.000 claims abstract description 37
- 210000002268 wool Anatomy 0.000 claims abstract description 37
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000007788 liquid Substances 0.000 claims abstract description 22
- 239000008367 deionised water Substances 0.000 claims abstract description 17
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 17
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 14
- 239000012530 fluid Substances 0.000 claims abstract description 13
- 238000002360 preparation method Methods 0.000 claims description 17
- YDEXUEFDPVHGHE-GGMCWBHBSA-L disodium;(2r)-3-(2-hydroxy-3-methoxyphenyl)-2-[2-methoxy-4-(3-sulfonatopropyl)phenoxy]propane-1-sulfonate Chemical compound [Na+].[Na+].COC1=CC=CC(C[C@H](CS([O-])(=O)=O)OC=2C(=CC(CCCS([O-])(=O)=O)=CC=2)OC)=C1O YDEXUEFDPVHGHE-GGMCWBHBSA-L 0.000 claims description 12
- 229940059574 pentaerithrityl Drugs 0.000 claims description 12
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 claims description 12
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims description 4
- 239000007800 oxidant agent Substances 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 4
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 3
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 2
- ZZVUWRFHKOJYTH-UHFFFAOYSA-N diphenhydramine Chemical compound C=1C=CC=CC=1C(OCCN(C)C)C1=CC=CC=C1 ZZVUWRFHKOJYTH-UHFFFAOYSA-N 0.000 claims description 2
- 150000007530 organic bases Chemical class 0.000 claims description 2
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 claims 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 abstract description 14
- 206010025421 Macule Diseases 0.000 abstract description 3
- 238000003912 environmental pollution Methods 0.000 abstract description 2
- 239000003795 chemical substances by application Substances 0.000 description 6
- 208000020442 loss of weight Diseases 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 241000628997 Flos Species 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007781 pre-processing Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229920000141 poly(maleic anhydride) Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 description 1
- 239000004299 sodium benzoate Substances 0.000 description 1
- 235000010234 sodium benzoate Nutrition 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Or Physical Treatment Of Fibers (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
The present invention relates to a kind of monocrystalline silicon piece without alcohol process for etching and flocking additive, first silicon chip is joined in pretreatment fluid, silicon chip is carried out pretreatment, pretreatment time 60s 300s, is then added in Woolen-making liquid carry out making herbs into wool；Monocrystal silicon process for etching is: deionized water is heated to 70 DEG C 90 DEG C, adds sodium hydroxide or potassium hydroxide, obtains monocrystal silicon making herbs into wool corrosive liquid.When using this flocking additive making herbs into wool, it is not necessary to isopropanol or ethanol etc., it is possible to obtain tiny, uniform, intensive pyramid matte, reduce making herbs into wool cost, it is to avoid environmental pollution；Adding pretreating process before making herbs into wool, after can making making herbs into wool, silicon chip is cleaner, reduces white macula fingerprint etc. and does over again, has certain practical value.
Description
Technical field
The present invention relates to area of solar cell, especially a kind of monocrystalline silicon piece is without alcohol process for etching and making herbs into wool thereof
Additive.
Background technology
In solaode preparation process, in order to improve solar battery efficiency, need at monocrystalline silicon piece table
Face makes matte, effective suede structure so that incident sunlight silicon chip surface formed secondary reflection or
Multiple reflections, increases the utilization rate of light so that more photon is absorbed product in the region near pn-junction
Raw photo-generated carrier, these photo-generated carriers are easier to be collected, and therefore add the collection of photo-generated carrier
Efficiency.
Conventional process for etching typically uses sodium hydroxide or potassium hydroxide, adds suitable isopropanol and sodium silicate
Mixed solution carry out making herbs into wool.Its shortcoming is: making herbs into wool pyramid is uneven, original silicon chip apparent condition
The volatile quantities such as asking high, chemical cost is bigger, and it is relatively big that process for etching controls difficulty, isopropanol are big, need
Constantly adjusting liquid, operation easier is high, thus brings making herbs into wool outward appearance rework rate the highest, and cell piece conversion ratio is relatively low
Problem.
One is disclosed at application number (201310394735.2) " fine-hair maring using monocrystalline silicon slice additive and using method thereof "
Kind of additive component is: Polyethylene Glycol, sodium benzoate, citric acid, hydrolytic polymaleic anhydride, sodium acetate and
The water of surplus.Additionally provide the etching method of a kind of monocrystalline silicon piece simultaneously, utilize above-mentioned Woolen-making liquid to monocrystal silicon
Sheet carries out making herbs into wool.This additive need not use substantial amounts of isopropanol or ethanol, substantially reduces Woolen-making liquid
COD, reduces making herbs into wool cost, reduces environmental pollution." a kind of at application number (201210474010.X)
Low cost fine-hair maring using monocrystalline silicon slice additive " disclose a kind of monocrystalline flocking additive, its component is: chelating agent,
Mel, perfluorinated surfactant and deionized water composition.This additive need not add add during making herbs into wool
Add agent and have wider technological operation scope and higher solution shelf life.Although both the above additive is the most not
Need to add isopropanol, reduce the COD of making herbs into wool waste liquid, reduce making herbs into wool cost, but after all there is making herbs into wool
Matte white macula white point, finger-marks equal proportion are higher, the more sordid problem of matte outward appearance.
Summary of the invention
The technical problem to be solved in the present invention is: proposes a kind of monocrystalline silicon piece and adds without alcohol process for etching and making herbs into wool thereof
Adding agent, it is possible to chemical reaction is uniformly carried out, matte outward appearance is cleaner, and rework rate is lower.
The technical solution adopted in the present invention is: a kind of monocrystalline silicon piece, without alcohol process for etching, comprises the following steps:
1) preparation pretreatment fluid: by the oxidant that mass ratio is 0.1wt%～10wt%, mass ratio is 0.1wt%～5
The alkali of wt%, joins in the water of surplus, and mix homogeneously is heated to 60 DEG C-80 DEG C；
2) preparation flocking additive: by the tetramethylolmethane of 0.05wt%～5wt%, three second of 0.1wt%～5wt%
Hydramine, the sodium lignin sulfonate of 0.01wt%～5wt%, join in the water of surplus, be uniformly mixed preparation
Become additive；
3) preparation Woolen-making liquid: by step 2) additive prepared joins in aqueous slkali, and mix homogeneously is prepared
Becoming Woolen-making liquid, flocking additive is 0.1～5:100 with the mass ratio of aqueous slkali；
4) silicon chip is immersed in step 1) in preparation making herbs into wool pretreatment fluid in, pretreatment fluid temperature is 60
DEG C-80 DEG C, pretreatment time 60s～300s；Silicon chip is immersed in deionized water after completing by pretreatment, water temperature
For room temperature, washing time is 60s-300s；Step 3 is joined after having washed) in the Woolen-making liquid prepared, system
Floss temperature is 70 DEG C-90 DEG C, making herbs into wool time 600s～1500s.
Further, step 1 of the present invention) in, oxidant is sodium hypochlorite, hypochlorous acid and peroxide
Change one or more in hydrogen；Described alkali is dilute sodium hydroxide, dilute potassium hydroxide, sodium carbonate, bicarbonate
Sodium, ammonia and organic base etc. therein one or more.
Further say, step 3 of the present invention) in, described aqueous slkali is that mass fraction is
The sodium hydroxide of 0.1%-5% or potassium hydroxide solution.
The component of flocking additive of the present invention includes: sodium lignin sulfonate, tetramethylolmethane, triethanolamine and
Deionized water；Each constituent mass degree is: tetramethylolmethane 0.05wt%-5wt%, triethanolamine
0.1wt%-5wt%, sodium lignin sulfonate 0.01wt%-5wt%, surplus is deionized water.This additive is used to enter
Row fine-hair maring using monocrystalline silicon slice, it is not necessary to add isopropanol and ethanol, decrease the COD of Woolen-making liquid, reduce making herbs into wool
Cost.
The invention has the beneficial effects as follows: silicon chip is carried out pretreatment, the organic washing agent that silicon chip surface is remained
Remove clean, the white macula white point ratio of silicon chip outward appearance after making herbs into wool can be reduced, reduce matte rework rate, favorably
In the process stabilizing of crystal silicon solar energy battery, there is good practical value；And the floss at monocrystalline silicon piece
When face makes, it is not necessary to use substantial amounts of isopropanol or ethanol, substantially reduce Woolen-making liquid COD, and can obtain
Uniformly, tiny, intensive matte pyramid.
Detailed description of the invention
Presently in connection with embodiment, the present invention is further detailed explanation.
Embodiment one
Use tetramethylolmethane, sodium lignin sulfonate, triethanolamine and deionized water to be configured to monocrystalline making herbs into wool to add
Agent, wherein the concentration of tetramethylolmethane is 0.2wt%, and the concentration of sodium lignin sulfonate is 0.1%, triethanolamine
Concentration is 0.5wt%, and the sodium hydroxide that then flocking additive of preparation joins mass fraction 1wt% is water-soluble
In liquid, the mass ratio without alcohol monocrystalline flocking additive Yu deionized water is 1:100, is then added by this Woolen-making liquid
Heat is to 75 DEG C.Using hydrogen peroxide, ammonia and deionized water preparation pretreatment fluid, wherein hydrogen peroxide is dense
Degree is 1wt%, and the concentration of ammonia is 0.5wt%, and this pretreatment fluid is heated to 60 DEG C.By area it is first
The monocrystalline silicon piece of 156mm × 156mm, thickness about 200um is put in preprocessing solution, carries out pretreatment,
Pretreatment time is 150s, then by silicon chip extracting, washes 30s, then is put into by silicon chip in Woolen-making liquid, carry out
Making herbs into wool, making herbs into wool time 1080s, after making herbs into wool completes, cleans, dries, weigh loss of weight, and be observed reflection
Rate and matte pattern.Gained silicon chip loss of weight 0.55g-0.75g, reflectance about 11%,.Obtained matte gold
Word tower microscope size is uniform, tiny, intensive, and pyramid size is at 2um-5um.
Embodiment two
Use tetramethylolmethane, sodium lignin sulfonate, triethanolamine and deionized water to be configured to monocrystalline making herbs into wool to add
Agent, wherein the concentration of tetramethylolmethane is 0.4wt%, and the concentration of sodium lignin sulfonate is 0.3%, triethanolamine
Concentration is 0.5wt%, and then the flocking additive of preparation joins the sodium hydroxide water of mass fraction 1.5wt%
In solution, the mass ratio without alcohol monocrystalline flocking additive Yu deionized water is 1.5:100, then by this Woolen-making liquid
It is heated to 80 DEG C.Use sodium hypochlorite, sodium hydroxide and deionized water preparation pretreatment fluid, wherein hypochlorous acid
The concentration of sodium is 1wt%, and the concentration of sodium hydroxide is 0.5wt%, and this pretreatment fluid is heated to 70 DEG C.First
The monocrystalline silicon piece that area is 156mm × 156mm, thickness about 200um is put in preprocessing solution, enters
Row pretreatment, pretreatment time is 120s, then by silicon chip extracting, washes 60s, then silicon chip is put into making herbs into wool
In liquid, carry out making herbs into wool, making herbs into wool time 1080s, after making herbs into wool completes, clean, dry, weigh loss of weight, go forward side by side
Row observation reflectance and matte pattern.Gained silicon chip loss of weight 0.55g-0.75g, reflectance about 11%, gold word
Tower matte size is at 2um-5um.
Embodiment three
Use tetramethylolmethane, sodium lignin sulfonate, triethanolamine and deionized water to be configured to monocrystalline making herbs into wool to add
Agent, wherein the concentration of tetramethylolmethane is 0.6wt%, and the concentration of sodium lignin sulfonate is 0.5%, triethanolamine
Concentration is 1wt%, and the sodium hydroxide that then flocking additive of preparation joins mass fraction 2wt% is water-soluble
In liquid, the mass ratio without alcohol monocrystalline flocking additive Yu deionized water is 2:100, is then heated by this Woolen-making liquid
To 75 DEG C.Using hypochlorous acid, sodium carbonate and deionized water preparation pretreatment fluid, the most hypochlorous concentration is
1wt%, the concentration of sodium carbonate is 0.5wt%, and this pretreatment fluid is heated to 70 DEG C.It is first 156mm by area
The monocrystalline silicon piece of × 156mm, thickness about 200um is put in preprocessing solution, carries out pretreatment, locates in advance
The reason time is 150s, then by silicon chip extracting, washes 60s, then is put into by silicon chip in Woolen-making liquid, carry out making herbs into wool,
Making herbs into wool time 1200s, after making herbs into wool completes, cleans, dries, weigh loss of weight, and be observed reflectance and floss
Face pattern.Gained silicon chip loss of weight 0.55g-0.75g, reflectance about 10.8%, pyramid matte size exists
1.5um-5um。
The detailed description of the invention of the simply present invention described in description above, various illustrations are not to this
Bright flesh and blood is construed as limiting, and person of an ordinary skill in the technical field is permissible after having read description
The most described detailed description of the invention is made an amendment or deformed, without departing from the spirit and scope of the invention.
Claims (4)
1. a monocrystalline silicon piece is without alcohol process for etching, it is characterised in that comprise the following steps:
1) preparation pretreatment fluid: by the oxidant that mass ratio is 0.1wt%～10wt%, mass ratio is 0.1wt%～5
The alkali of wt%, joins in the water of surplus, and mix homogeneously is heated to 60 DEG C-80 DEG C；
2) preparation flocking additive: by the tetramethylolmethane of 0.05wt%～5wt%, three second of 0.1wt%～5wt%
Hydramine, the sodium lignin sulfonate of 0.01wt%～5wt%, join in the water of surplus, be uniformly mixed preparation
Become additive；
3) preparation Woolen-making liquid: by step 2) additive prepared joins in aqueous slkali, and mix homogeneously is prepared
Becoming Woolen-making liquid, flocking additive is 0.1～5:100 with the mass ratio of aqueous slkali；
4) silicon chip is immersed in step 1) in preparation making herbs into wool pretreatment fluid in, pretreatment fluid temperature is 60 DEG C
-80 DEG C, pretreatment time 60s～300s；Silicon chip is immersed in deionized water after completing by pretreatment, and water temperature is
Room temperature, washing time is 60s-300s；Step 3 is joined after having washed) in the Woolen-making liquid prepared, making herbs into wool
Temperature is 70 DEG C-90 DEG C, making herbs into wool time 600s～1500s.
2. a kind of monocrystalline silicon piece as claimed in claim 1 is without alcohol process for etching, it is characterised in that: described
Step 1) in, oxidant is one or more in sodium hypochlorite, hypochlorous acid and hydrogen peroxide；Described alkali
Be dilute sodium hydroxide, dilute potassium hydroxide, sodium carbonate, sodium bicarbonate, ammonia and organic base one therein or
Several.
3. a kind of monocrystalline silicon piece as claimed in claim 1 is without alcohol process for etching, it is characterised in that: described
Step 3) in, described aqueous slkali be mass fraction be sodium hydroxide or the potassium hydroxide solution of 0.1%-5%.
4. monocrystalline silicon piece as claimed in claim 1 is without the flocking additive used in alcohol process for etching,
It is characterized in that: the component of flocking additive includes: sodium lignin sulfonate, tetramethylolmethane, triethanolamine with
And deionized water；Each constituent mass degree is: tetramethylolmethane 0.05wt%-5wt%, triethanolamine
0.1wt%-5wt%, sodium lignin sulfonate 0.01wt%-5wt%, surplus is deionized water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410850205.9A CN104576831B (en) | 2014-12-31 | 2014-12-31 | A kind of monocrystalline silicon piece is without alcohol process for etching and flocking additive thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410850205.9A CN104576831B (en) | 2014-12-31 | 2014-12-31 | A kind of monocrystalline silicon piece is without alcohol process for etching and flocking additive thereof |
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| Publication Number | Publication Date |
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| CN104576831A CN104576831A (en) | 2015-04-29 |
| CN104576831B true CN104576831B (en) | 2016-10-12 |
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| CN107287597A (en) * | 2016-03-30 | 2017-10-24 | 杭州聚力氢能科技有限公司 | Wool-making agent of monocrystalline silicon surface processing and preparation method thereof and application method |
| CN107523880A (en) * | 2016-06-20 | 2017-12-29 | 杭州聚力氢能科技有限公司 | For the processing method of bad after Wool-making agent of bad processing and preparation method thereof after monocrystalline silicon making herbs into wool and monocrystalline silicon making herbs into wool |
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| CN110846721A (en) * | 2019-10-12 | 2020-02-28 | 湖南理工学院 | Monocrystalline silicon texturing additive formula containing polyalcohol and PEG |
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| US20120295447A1 (en) * | 2010-11-24 | 2012-11-22 | Air Products And Chemicals, Inc. | Compositions and Methods for Texturing of Silicon Wafers |
| CN102140697A (en) * | 2010-12-28 | 2011-08-03 | 中国科学院微电子研究所 | Method for preparing porous pyramid structure on monocrystalline silicon substrate |
| CN103290484A (en) * | 2012-02-28 | 2013-09-11 | 靖江市精益化学品有限公司 | Fourth generation alcohol-free additive not additionally added in suede preparation of monocrystalline silicon |
| CN103938276A (en) * | 2013-01-23 | 2014-07-23 | 尚德太阳能电力有限公司 | Monocrystalline silicon wafer texturing additive, texturing solution and corresponding texturing method |
| CN103451739B (en) * | 2013-09-04 | 2016-01-20 | 常州时创能源科技有限公司 | Fine-hair maring using monocrystalline silicon slice additive and using method thereof |
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