CN103361739B - A kind of crystal silicon solar batteries implements the method for back of the body polishing in producing - Google Patents
A kind of crystal silicon solar batteries implements the method for back of the body polishing in producing Download PDFInfo
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- CN103361739B CN103361739B CN201310282762.0A CN201310282762A CN103361739B CN 103361739 B CN103361739 B CN 103361739B CN 201310282762 A CN201310282762 A CN 201310282762A CN 103361739 B CN103361739 B CN 103361739B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention discloses during a kind of crystal silicon solar batteries is produced the method implementing back of the body polishing, it adopts a kind of alkali groove structure of wet etching, described alkali groove is divided into two independently parts, be respectively soak zone and spray district, there is independently cell body have independently controlling functions in two regions, described controlling functions comprise control alkali lye concentration, temperature and moisturizing and interpolation liquid function; Adopt the mode of " Overwater-floating " in the soak zone of described alkali groove, etch back of the body polishing by alkali lye, adopt the mode of spray in the spray district of described alkali groove, the front surface of silicon chip and the back side are sprayed, removes the porous silicon of silicon chip surface.The present invention when not affecting front side of silicon wafer, can realize the target of carrying on the back polishing in manufacture of solar cells, simple to operate, excellent result.
Description
Technical field
The invention belongs to crystal silicon solar energy battery and manufacture field, particularly relate to a kind of method realizing one side back of the body polishing in silicon solar cell production on wet-method etching equipment.
Background technology
During conventional crystalline silicon solar cell is produced, understand in cell piece back up aluminium back surface field, to reach the effect of passivation and raising dorsal light reflex rate.If carry out polished finish to silicon chip back side before the printing of aluminium back surface field, just can form smooth back surface, be conducive to being formed evenly back surface field and improve luminous reflectance factor, thus reduce the compound of back surface and increase spectral response, improving the efficiency of conversion of solar cell.
At present in silicon solar cell, realizing back of the body polishing by wet etching operation is a well selection.For kuttler etching apparatus, main flow and the object of employing chain type wet-method etching are: (1) silicon chip removes the phosphorosilicate glass of front and back through HF, makes the effect that silicon chip reaches hydrophobic.(2) silicon chip swims in HF/HNO
3the aqueous solution on, realize the removal of edge and back side PN junction, reach the effect of certain back of the body polishing simultaneously; (3) KOH or NaOH solution remove the porous silicon of silicon chip surface, and in and acid solution on silicon chip; (4) zone of oxidation of silicon chip is removed in HF acid.
Although current this wet etching can play certain back of the body polishing action, the effect of its polishing still needs further raising, therefore, need invent a kind of new technique and make the back of the body polishing effect of current wet etching perfect further.
Summary of the invention
The present invention is on the basis based on current wet etching, provides a kind of in silicon solar cell is produced, realizes the method for back of the body polishing, the method can when not affecting front side of silicon wafer, realize the target of carrying on the back polishing in manufacture of solar cells, simple to operate, excellent result.
The technical scheme that technical solution problem of the present invention adopts is: a kind of crystal silicon solar batteries implements the method for back of the body polishing in producing, it adopts a kind of alkali groove structure of wet etching, described alkali groove is divided into two independently parts, be respectively soak zone and spray district, there is independently cell body have independently controlling functions in two regions, described controlling functions comprise control alkali lye concentration, temperature and moisturizing and interpolation liquid function; Adopt the mode of " Overwater-floating " in the soak zone of described alkali groove, etch back of the body polishing by alkali lye, adopt the mode of spray in the spray district of described alkali groove, the front surface of silicon chip and the back side are sprayed, removes the porous silicon of silicon chip surface.
Preferred as one, the cell body length of described alkali groove soak zone is 0.5m ~ 1.5m, and the cell body length in described alkali groove spray district is 0.2m ~ 1.0m.
Preferred as one, controlling described alkali groove soak zone temperature is 20 DEG C ~ 60 DEG C, and concentration is 5% ~ 40%; Controlling described alkali groove spray district temperature is 20 DEG C ~ 40 DEG C, and concentration is 2% ~ 10%.
The invention provides a kind of design of alkali groove of wet-method etching equipment, thus achieve the target utilizing alkali groove to carry out carrying on the back polishing.On the one hand, alkali groove is divided into soak zone and spray two, district independently part by this invention cleverly, can control temperature and the concentration of alkali lye respectively, and moisturizing and interpolation liquid.On the other hand, at soak zone silicon chip by the mode of " Overwater-floating ", under the effect of the alkali lye of comparatively high temps and concentration, realize the polishing of the one side back of the body; Spray district then controls relatively low temperature and concentration, more fully removes porous silicon to the upper and lower surface spray of silicon chip.
Embodiment
A kind of method utilizing wet etching to realize back of the body polishing, for kuttler equipment, specific implementation method is: (1) alkali groove to etching apparatus carries out new design, alkali groove is divided into soak zone and spray two, district independently part, independently can control concentration, the temperature of alkali lye, and other relevant moisturizings and add liquid.Wherein, the cell body length of soak zone is 0.6m, and the cell body length in spray district is 0.2m.(2) two cell bodies of alkali groove are undertaken joining groove by certain concentration: soak zone concentration of lye 30%, and spray district concentration of lye is 5%; Soak zone temperature controls at 50 DEG C, and spray district temperature is 20 DEG C.(3) silicon chip is through washing bath after the etching groove of etching apparatus, then through air knife drying, enters the soak zone of alkali groove, and silicon chip adopts the mode of " Overwater-floating " to pass through in soak zone, alkali lye carries out back of the body polishing to silicon chip.Behind soak zone, the alkali lye of silicon chip back side is blown off in cell body by air knife.After back of the body polishing process completes, silicon chip enters spray district and mainly carries out cleaning removal porous silicon to front side of silicon wafer.(4) zone of oxidation of silicon chip is removed with HF acid.
Claims (2)
1. a crystal silicon solar batteries implements the method for back of the body polishing in producing, it is characterized in that, adopt a kind of alkali groove structure of wet etching, described alkali groove is divided into two independently parts, be respectively soak zone and spray district, there is independently cell body have independently controlling functions in two regions, described controlling functions comprise control alkali lye concentration, temperature and moisturizing and interpolation liquid function; Controlling described alkali groove soak zone temperature is 20 DEG C ~ 60 DEG C, and concentration is 5% ~ 40%; Controlling described alkali groove spray district temperature is 20 DEG C ~ 40 DEG C, and concentration is 2% ~ 10%; Adopt the mode of " Overwater-floating " in the soak zone of described alkali groove, etch back of the body polishing by alkali lye, adopt the mode of spray in the spray district of described alkali groove, the front surface of silicon chip and the back side are sprayed, removes the porous silicon of silicon chip surface.
2. a kind of crystal silicon solar batteries according to claims 1 implements the method for back of the body polishing in producing, it is characterized in that, the cell body length of described alkali groove soak zone is 0.5m ~ 1.5m, and the cell body length in described alkali groove spray district is 0.2m ~ 1.0m.
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| CN201310282762.0A CN103361739B (en) | 2013-07-08 | 2013-07-08 | A kind of crystal silicon solar batteries implements the method for back of the body polishing in producing |
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| CN201310282762.0A CN103361739B (en) | 2013-07-08 | 2013-07-08 | A kind of crystal silicon solar batteries implements the method for back of the body polishing in producing |
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| CN103361739A CN103361739A (en) | 2013-10-23 |
| CN103361739B true CN103361739B (en) | 2016-01-20 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505431A (en) * | 2014-12-11 | 2015-04-08 | 东方日升新能源股份有限公司 | Process method for reducing use level of solar battery cell etching acid |
| CN108054093A (en) * | 2017-12-07 | 2018-05-18 | 苏州润阳光伏科技有限公司 | Monocrystalline silicon piece etches polishing method |
| CN109119338A (en) * | 2018-08-06 | 2019-01-01 | 横店集团东磁股份有限公司 | A kind of highback polishing and efficient single crystal process |
| CN110534408A (en) * | 2019-07-30 | 2019-12-03 | 苏州昊建自动化***有限公司 | A kind of crystal-silicon battery slice chain type alkali polishing production line and chain type alkali polishing method |
| CN112466774B (en) * | 2019-09-06 | 2023-11-17 | 泰州隆基乐叶光伏科技有限公司 | Etching equipment |
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| US5963821A (en) * | 1996-10-29 | 1999-10-05 | Komatsu Electronic Metal Co., Ltd. | Method of making semiconductor wafers |
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| CN102108557A (en) * | 2011-01-27 | 2011-06-29 | 巨力新能源股份有限公司 | Method for preparing monocrystalline silicon suede |
| CN102185011A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Texturing method for solar cell |
| CN102569499A (en) * | 2010-12-23 | 2012-07-11 | 无锡尚德太阳能电力有限公司 | Etching system and etching method |
| CN102703989A (en) * | 2012-05-28 | 2012-10-03 | 天威新能源控股有限公司 | Monocrystal-like solar battery texturing process |
| CN102969392A (en) * | 2012-10-17 | 2013-03-13 | 横店集团东磁股份有限公司 | Single-side polishing process of solar monocrystalline silicon battery |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4103304B2 (en) * | 2000-05-31 | 2008-06-18 | 株式会社Ｓｕｍｃｏ | Silicon wafer manufacturing method |
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5963821A (en) * | 1996-10-29 | 1999-10-05 | Komatsu Electronic Metal Co., Ltd. | Method of making semiconductor wafers |
| DE20321702U1 (en) * | 2003-05-07 | 2008-12-24 | Universität Konstanz | Device for texturing surfaces of silicon wafers |
| CN102185011A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Texturing method for solar cell |
| CN102569499A (en) * | 2010-12-23 | 2012-07-11 | 无锡尚德太阳能电力有限公司 | Etching system and etching method |
| CN102108557A (en) * | 2011-01-27 | 2011-06-29 | 巨力新能源股份有限公司 | Method for preparing monocrystalline silicon suede |
| CN102703989A (en) * | 2012-05-28 | 2012-10-03 | 天威新能源控股有限公司 | Monocrystal-like solar battery texturing process |
| CN102969392A (en) * | 2012-10-17 | 2013-03-13 | 横店集团东磁股份有限公司 | Single-side polishing process of solar monocrystalline silicon battery |
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