CN107877352A - Semiconductor wafer optical electro-chemistry mechanical polishing apparatus - Google Patents
Semiconductor wafer optical electro-chemistry mechanical polishing apparatus Download PDFInfo
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- CN107877352A CN107877352A CN201710994803.7A CN201710994803A CN107877352A CN 107877352 A CN107877352 A CN 107877352A CN 201710994803 A CN201710994803 A CN 201710994803A CN 107877352 A CN107877352 A CN 107877352A
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- Prior art keywords
- liquid pool
- polishing
- semiconductor wafer
- rubbing head
- fixed
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses semiconductor wafer optical electro-chemistry mechanical polishing apparatus, including rubbing head, for being in contact and being pressurizeed with wafer surface；Liquid pool is polished, for fixed wafer and contains chemical polishing solution；First driving driving section, connection polishing liquid pool, for driving the dead axle revolution of polishing liquid pool；Second driving driving section, connects rubbing head, for driving rubbing head dead axle to turn round；Rubbing head is positioned at the top of polishing liquid pool；Ultraviolet source, positioned at the top of polishing liquid pool, downward radiation chip；Supporting part, for supporting and fixing the rubbing head, polishing liquid pool.Irradiate wafer surface mode online present invention employs ultraviolet light; irradiate wafer surface all the time in polishing process; can efficiently oxidation modification chip, then oxidation modification layer, and then the removal rate in the whole polishing process of raising are mechanically removed by polishing pad and abrasive particle.
Description
Technical field
The present invention relates to burnishing device, especially semiconductor wafer optical electro-chemistry mechanical polishing apparatus.
Background technology
Third generation semi-conducting material such as gallium nitride (GaN), carborundum (SiC), there is excellent electrically and thermally performance, wrap
Broad stopband, high breakdown electric field, high saturation drift velocity, high heat conductance are included, these characteristics can cause GaN, SiC device to be operated in
High temperature, high-power specific condition.When GaN, SiC material as device in use, requiring that material has high surface integrity
(surface such as such as low surface roughness, no marking, micro-crack, dislocation and residual stress/sub-surface damage), thus GaN,
, it is necessary to undergo surface grinding and polishing process in SiC material preparation process, the table of material can be produced in the process of lapping of chip
Face/sub-surface damage is, it is necessary to carry out chemically mechanical polishing processing to chip to remove surface/sub-surface damage of chip and acquisition
Ultra-smooth surface.GaN, SiC crystal material bond energy are big, are hardly chemically reacted under normal temperature with any acid-base reagent, category
In typical hard crisp difficult-to-machine material, two kinds of materials are all low in the presence of processing clearance in process is chemically-mechanicapolish polished, and enter
And cause long processing time, the high a series of problems of cost.Document report (HAida.etc.Current Applied
Physics,2012,12(9):S41-S46 the chemically mechanical polishing clearance that GaN is assumed in) is about 50nm/h, chip after grinding
There are about 1.5 μm of sub-surface damage depth, to completely remove, it is necessary to the chemically mechanical polishing time be 30h.
In the CMP process of GaN wafer, it is believed that the oxidation efficiency of chip is that chip chemically mechanical polishing removes
The rate determining step of rate, therefore the speed of the removal in polishing process can be improved by improving oxidation efficiency of the chip in polishing process
Rate.GaN, SiC crystal can be promoted in crystal as semi-conducting material by the way of ultraviolet light directly irradiation to wafer surface
The separation of electron hole, wafer surface oxidation efficiency can be effectively improved using the hole of separation.
Existing chemical mechanical polishing apparatus is typically using chip upper, and polishing pad is under, and chip passes through loading during polishing
Pressure is pressed on polishing pad, is rotated further around respective gyroaxis and is produced chip with polishing pad relative motion mode to chip progress chemistry
Mechanical polishing, such a polishing mode can not imitate ultraviolet light effective irradiation to wafer surface to improve the oxidation in polishing process
Rate.Reported literature (S Sadakuni.etc.Materials Science Forum, 2010,645-648:795-798) use
Chip is pressed on printing opacity quartz plate and GaN wafer is polished, and obtains about 60nm/h clearances, such a polishing mode is in light
During strong increase, clearance is oxidized the limitation of thing dissolution velocity, can not further obtain bigger clearance.
The content of the invention
The present invention is directed to the proposition of background above technical problem and research and design goes out semiconductor wafer optical electro-chemistry machinery and thrown
Electro-optical device.Optical electro-chemistry mechanical polishing of the present invention, refer on existing chemically mechanical polishing basis, introduce ultraviolet
Line directly irradiation is polished semiconductor workpiece, and it is modified mechanical that semiconductor workpiece produces optical electro-chemistry under the auxiliary of ultraviolet
Polish a kind of processing mode removed.
Technical solution of the present invention is semiconductor wafer optical electro-chemistry mechanical polishing apparatus, including rubbing head, is used for and chip
Surface is in contact and pressurizeed；Liquid pool is polished, for fixed wafer and contains chemical polishing solution；First driving driving section, even
Polishing liquid pool is connect, for driving the dead axle revolution of polishing liquid pool；First driving transmission parts can drive polishing liquid pool and chip dead axle
Revolution；Second driving driving section, connects rubbing head, for driving rubbing head dead axle to turn round；Rubbing head is upper positioned at polishing liquid pool
Side；Ultraviolet source, positioned at the top of polishing liquid pool, downward radiation chip；Supporting part, for support and fix the rubbing head,
Polish liquid pool.
As preferable technical scheme, the rubbing head is the buff spindle that surface mount has polishing pad.
Further, polishing pad is bonded on the end face of buff spindle, and buff spindle passes sequentially through single-iris shaft coupling, step
Axle, shaft coupling are connected with motor, and motor can drive buff spindle to be turned round around dead axle.
As preferable technical scheme, described device also includes wafer fixing board, and the chip is bonded in crystalline substance by paraffin
In piece fixed plate, the wafer fixing board is fixed on inside polishing liquid pool.Chip is set to be moved with polishing liquid pool.
Further, wafer fixing board is fixed on inside polishing liquid pool by screw.
Further, polishing liquid pool is fixed on Step Shaft I, then is connected by shaft coupling with motor, driving electricity
Machine can drive polishing liquid pool wraparound rotating shaft rotation, and then drive the chip being fixed in polishing liquid pool to be turned round around dead axle.
Further, relative velocity can be produced both when polishing pad each turns round with chip.
As preferable technical scheme, a shallow slot close with wafer diameter is machined with the wafer fixing board, will
Chip is placed wherein, and chip is played the role of positioning.
As preferable technical scheme, described device also includes linear module I, and linear module I includes bottom plate I, sliding surface
Plate I and guide rail I, guide rail I are fixed on bottom plate I, and slidable panels I in the vertical directions do linear slide along guide rail I；The polishing
Head and the second driving driving section are arranged on slidable panels I.Whole part can linear slide be polishing on linear module guide rail
During polish pressure is provided.
Further, spring is provided between slidable panels I and bottom plate I, can be by adjusting spring and demarcating diverse location
The tonnage that pressure is come in quantitative adjusting polishing process, can be extra when the deadweight of whole part is all unsatisfactory for polish pressure
Increase counterweight realizes the loading of larger polish pressure.
As preferable technical scheme, described device also includes linear module II, and linear module II includes bottom plate II, motor
Fixed seat II, shaft coupling II, slidable panels II, guide rail II, screw mandrel II and stepper motor II；Bottom plate II is fixed on the support
Portion；Guide rail II is fixed on bottom plate II, and slidable panels II does linear slide along guide rail II in the horizontal direction；Motor fixing seat II
It is fixed on bottom plate II；Stepper motor II is fixed on motor fixing seat II；Stepper motor II drives screw mandrel II to turn by shaft coupling II
Dynamic and then driving slidable panels II is moved back and forth；The bottom plate I is fixed on slidable panels II.
As preferable technical scheme, the diameter of the polishing pad is less than the diameter of chip.Crystalline substance is not completely covered for polishing pad
Piece surface, ultraviolet light can be irradiated in the wafer surface blocked to non-polished pad, processed online in polishing process
The irradiation for the part that is not blocked to chip is remained in journey.
As preferable technical scheme, the polishing pad is one kind in polyurethane, non-woven fabrics, flannelette polishing pad.Enter one
Step ground, the polishing pad itself of polyurethane type have abrasive particle.
As preferable technical scheme, the polishing pad contains cerium oxide or/and silica abrasive particle.
As preferable technical scheme, the ultraviolet source is low pressure mercury lamp, high-pressure sodium lamp, LED mercury lamps, deuterium lamp, xenon lamp
In one or more.
During polishing, the buff spindle for being pasted with polishing pad drives revolution and by linear module II stepping by motor
Motor II driving alternating translationals are allowed to produce relative motion with chip, and polish pressure can be by installed in linear module I sliding surfaces
Part loading on plate I, is adjusted by the spring for changing different stiffness factors between bottom plate I and slidable panels I, in polishing process
Required solution is directly contained in polishing liquid pool；Ultraviolet source can be irradiated onto chip online in whole polishing process.
Compared with prior art：The present invention has advantages below：
1st, it is high to polish removal efficiency
Irradiate wafer surface mode online present invention employs ultraviolet light, irradiate wafer surface all the time in polishing process,
Can efficiently oxidation modification chip, then oxidation modification layer is mechanically removed by polishing pad and abrasive particle, and then improve whole
Removal rate in polishing process.
2nd, device is simple to operate
Polish pressure, wafer rotation, polishing pad rotating speed, solution type and the technological parameter such as concentration, ultraviolet source intensity are equal
It can be adjusted according to the workpiece type of reality.
Brief description of the drawings
Fig. 1 is the left view of semiconductor wafer optical electro-chemistry mechanical polishing apparatus of the present invention；
Fig. 2 is partially schematic for pressure controlled spring in semiconductor wafer optical electro-chemistry mechanical polishing apparatus of the present invention
Figure；
Fig. 3 is the front view of semiconductor wafer optical electro-chemistry mechanical polishing apparatus of the present invention；
Fig. 4 is the right view of semiconductor wafer optical electro-chemistry mechanical polishing apparatus of the present invention；
Fig. 5 is buff spindle, chip, the wafer fixing board of semiconductor wafer optical electro-chemistry mechanical polishing apparatus of the present invention, is thrown
The top view of light liquid pool；
Fig. 6 is buff spindle, chip, the wafer fixing board of semiconductor wafer optical electro-chemistry mechanical polishing apparatus of the present invention, is thrown
The sectional view of light liquid pool；
Fig. 7 is the axonometric drawing of semiconductor wafer optical electro-chemistry mechanical polishing apparatus of the present invention.
Embodiment
With reference to specific drawings and examples, the present invention is described in detail.
Embodiment 1
Referring to Fig. 1, bottom plate 2 is supported by 4 levelling bolts 1, and right angle fixed plate 21 is fixed on bottom plate 2, connecting plate 22
It is fixed on the vertical plane of right angle fixed plate 21, electric machine support 4a and pole bracket 6a are separately fixed at connecting plate 22 from bottom to up
Vertical plane on, motor 3a is arranged on electric machine support 4a lower section, and angular contact ball bearing support base 7a is arranged on pole bracket 6a
Top, Step Shaft I 8 is arranged on angular contact ball bearing support base 7a top, and supports fixed polishing liquid pool 9.Step Shaft I
Polish pressure in 8 carrying polishing process, the connection shaft couplings of Step Shaft I 8 5a rotate axis connection, driving torque with motor 3a again
To polishing liquid pool 9.
Referring to Fig. 1, Fig. 2, Fig. 3, two supporting rods 20 of Fig. 4 are fixed on a base plate 2, and billet clamp 19 passes through tightening screw
It is fixedly clamped on supporting rod 20, vertical support plate 18 is mounted and fixed on the vertical plane of billet clamp 19.Linear module II bags
Bottom plate II35, slidable panels II28, guide rail II, screw mandrel II23 and stepper motor II26 are included, bottom plate II35 is mounted and fixed on vertical
On support plate 18.Linear module I includes bottom plate I15, slidable panels I16, and guide rail I17, bottom plate I15 are mounted and fixed on slidable panels
On II28.Screw 29 is installed on slidable panels I16, a screw 30 is installed on bottom plate I15, pacified between screw 29 and screw 30
A spring 14 is filled, pressure when can adjust polishing by changing spring 14, when needing extra on-load pressure, in motor 3b
The upper counterweight for placing certain mass can be achieved.Linear module slidable panels 16 can slide on guide rail 17.Electric machine support 4b
It is mounted and fixed on respectively from top to bottom on slidable panels I16 vertical planes with pole bracket 6b.Motor 3b is arranged on electric machine support
4b top, angular contact ball bearing support base 7b are arranged on pole bracket 6b lower section, and shaft coupling 5b connects with motor 3b rotary shafts
Connect, Step Shaft II 13 is arranged on shaft coupling 5b one end, and Step Shaft II13 is connected on single-iris shaft coupling 12.Buff spindle 10
On single-iris shaft coupling 12, single-iris shaft coupling can be when loaded polish pressure be little, adaptive adjustment polishing
Head posture, make the polishing pad that rubbing head bottom end face is pasted keep adaptively contacting with chip all the time, avoid rubbing head rigidly
With axis connection, chip contacts uneven with polishing pad when causing to polish.
The driving of buff spindle 10 and running part are consistent with the driving running part structure for polishing liquid pool 9.
It is arranged on referring to Fig. 3, Fig. 4, motor fixing seat II24 on bottom plate II35, stepper motor II26 fixes installed in motor
On seat II24, stepper motor II26 drives leading screw II23 to rotate to drive slidable panels II28 to move by shaft coupling 25.Step
Stepper motor II26 can drive slidable panels II28 to move back and forth by the controlling cycle forward and reverse rotation of host computer.Gear
Plate II27 is arranged on bottom plate II35, and when slidable panels II28 movements are excessive, baffle plate II27 can prevent slidable panels II28
Come off from guide rail.
Referring to Fig. 1, Fig. 5, Fig. 6, chip 32 is bonded on wafer fixing board 31 by the paraffin of heating, and fixing screws 34 will
Wafer fixing board 31 is fixed on polishing liquid pool 9, and motor 3a polishes liquid pool 9 and crystalline substance by shaft coupling 5a, Step Shaft I 8, driving
Piece 32 is around axial revolution, and the buff spindle 10 for being pasted with polishing pad 33 is driven around axial revolution by motor 3b, and polish pressure passes through throwing
The driving of optical axis 10 and coupling part (slidable panels I16, motor 3b, electric machine support 4b, shaft coupling 5b, Step Shaft II13, cantilever
Support 6b, angular contact ball bearing support base 7b, single-iris shaft coupling 12) deadweight loaded.Polish liquid pool 9, buff spindle 10
All can around itself, axially revolution produces relative motion, in polishing processing, ultraviolet source can irradiate all the time chip 32 not by
The surface that polishing pad covers, exciting wafer 32 produces electron hole pair, and then wafer surface is aoxidized, then the machine of polished pad 33
Tool effect removes.Ultraviolet light irradiation chip 32 is carried out ultraviolet assistant chemical mechanical polishing processing by ultraviolet source 11 online.
The foregoing is only a preferred embodiment of the present invention, but protection scope of the present invention be not limited thereto,
Any one skilled in the art the invention discloses technical scope in, technique according to the invention scheme and its
Inventive concept is subject to equivalent substitution or change, should all be included within the scope of the present invention.
Claims (10)
1. semiconductor wafer optical electro-chemistry mechanical polishing apparatus, including
Rubbing head, for being in contact and being pressurizeed with wafer surface；
Liquid pool is polished, for fixed wafer and contains polishing fluid；
First driving driving section, connection polishing liquid pool, for driving the dead axle revolution of polishing liquid pool；
Second driving driving section, connects rubbing head, for driving rubbing head dead axle to turn round；
Rubbing head is positioned at the top of polishing liquid pool；
Ultraviolet source, positioned at the top of polishing liquid pool, downward radiation chip；
And supporting part, for supporting and fixing the rubbing head, polishing liquid pool.
2. semiconductor wafer optical electro-chemistry mechanical polishing apparatus according to claim 1, it is characterised in that the rubbing head
There is the buff spindle of polishing pad for surface mount.
3. semiconductor wafer optical electro-chemistry mechanical polishing apparatus according to claim 1, it is characterised in that described device is also
Including wafer fixing board, the chip is bonded on wafer fixing board by paraffin, and the wafer fixing board is fixed on polishing fluid
Inside pond.
4. semiconductor wafer optical electro-chemistry mechanical polishing apparatus according to claim 1, it is characterised in that the chip is consolidated
A shallow slot close with wafer diameter is machined with fixed board, chip is placed in shallow slot.
5. semiconductor wafer optical electro-chemistry mechanical polishing apparatus according to claim 1, it is characterised in that described device is also
Including linear module I, linear module I includes bottom plate I, slidable panels I and guide rail I, and guide rail I is fixed on bottom plate I, slidable panels
I in the vertical directions do linear slide along guide rail I；The rubbing head and the second driving driving section are arranged on slidable panels I.
6. semiconductor wafer optical electro-chemistry mechanical polishing apparatus according to claim 1, it is characterised in that described device is also
Including linear module II, linear module II include bottom plate II, motor fixing seat II, shaft coupling II, slidable panels II, guide rail II,
Screw mandrel II and stepper motor II；Bottom plate II is fixed on the supporting part；Guide rail II is fixed on bottom plate II, and slidable panels II is in water
Square do linear slide along guide rail II upwards；Motor fixing seat II is fixed on bottom plate II；Stepper motor II, which is fixed on motor, to be fixed
Seat II；Stepper motor II drives screw mandrel II to rotate to drive slidable panels II to move back and forth by shaft coupling II；The bottom plate I
It is fixed on slidable panels II.
7. semiconductor wafer optical electro-chemistry mechanical polishing apparatus according to claim 2, it is characterised in that the polishing pad
Diameter be less than chip diameter.
8. semiconductor wafer optical electro-chemistry mechanical polishing apparatus according to claim 2, it is characterised in that：The polishing pad
For one kind in polyurethane, non-woven fabrics, flannelette polishing pad.
9. semiconductor wafer optical electro-chemistry mechanical polishing apparatus according to claim 2, it is characterised in that：The polishing pad
Contain cerium oxide or/and silica abrasive particle.
10. semiconductor wafer optical electro-chemistry mechanical polishing apparatus according to claim 1, it is characterised in that：It is described ultraviolet
Light source is low pressure mercury lamp, high-pressure sodium lamp, LED mercury lamps, deuterium lamp, the one or more in xenon lamp.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710994803.7A CN107877352A (en) | 2017-10-23 | 2017-10-23 | Semiconductor wafer optical electro-chemistry mechanical polishing apparatus |
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| CN201710994803.7A CN107877352A (en) | 2017-10-23 | 2017-10-23 | Semiconductor wafer optical electro-chemistry mechanical polishing apparatus |
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| CN107877352A true CN107877352A (en) | 2018-04-06 |
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| CN201710994803.7A Pending CN107877352A (en) | 2017-10-23 | 2017-10-23 | Semiconductor wafer optical electro-chemistry mechanical polishing apparatus |
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Cited By (11)
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|---|---|---|---|---|
| CN108857841A (en) * | 2018-07-25 | 2018-11-23 | 浙江工业大学 | A kind of the photochemistry processing platform and its processing method of adjustable light source |
| CN109465739A (en) * | 2018-12-14 | 2019-03-15 | 大连理工大学 | A kind of semiconductor wafer optical electro-chemistry mechanical polishing processing unit (plant) |
| CN109616412A (en) * | 2018-12-14 | 2019-04-12 | 大连理工大学 | A kind of semiconductor wafer processing method that photochemistry is combined with mechanical polishing |
| CN109648463A (en) * | 2018-12-14 | 2019-04-19 | 厦门大学 | A kind of semiconductor wafer optical electro-chemistry mechanical polishing processing method |
| CN109848840A (en) * | 2018-12-14 | 2019-06-07 | 厦门大学 | A kind of semiconductor wafer processing device that photochemistry is combined with mechanical polishing |
| CN109866084A (en) * | 2019-04-08 | 2019-06-11 | 北京建筑大学 | A kind of UV photocatalysis assistant chemical mechanical polishing apparatus and polishing method |
| WO2020119779A1 (en) * | 2018-12-14 | 2020-06-18 | 大连理工大学 | Semiconductor wafer photoelectrochemical mechanical polishing processing device and processing method |
| CN112192411A (en) * | 2020-10-12 | 2021-01-08 | 李静雯 | Steel structure polishing and derusting device utilizing thermal expansion effect |
| CN112692720A (en) * | 2020-12-09 | 2021-04-23 | 苏州斯尔特微电子有限公司 | Motion control device of wafer grinding machine |
| CN113334242A (en) * | 2021-06-24 | 2021-09-03 | 大连理工大学 | Processing device and process for diamond wafer ultraviolet light assisted chemical mechanical polishing |
| CN114939803A (en) * | 2022-05-25 | 2022-08-26 | 西南交通大学 | Device and method applied to precision machining of 3D printing stainless steel runner |
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| CN108857841B (en) * | 2018-07-25 | 2023-09-29 | 浙江工业大学 | Photochemical processing platform capable of adjusting light source and processing method thereof |
| JP7281226B2 (en) | 2018-12-14 | 2023-05-25 | 大連理工大学 | Photoelectrochemical mechanical polishing processing apparatus and processing method for semiconductor wafer |
| CN109465739A (en) * | 2018-12-14 | 2019-03-15 | 大连理工大学 | A kind of semiconductor wafer optical electro-chemistry mechanical polishing processing unit (plant) |
| CN109616412A (en) * | 2018-12-14 | 2019-04-12 | 大连理工大学 | A kind of semiconductor wafer processing method that photochemistry is combined with mechanical polishing |
| CN109648463A (en) * | 2018-12-14 | 2019-04-19 | 厦门大学 | A kind of semiconductor wafer optical electro-chemistry mechanical polishing processing method |
| CN109848840A (en) * | 2018-12-14 | 2019-06-07 | 厦门大学 | A kind of semiconductor wafer processing device that photochemistry is combined with mechanical polishing |
| WO2020119779A1 (en) * | 2018-12-14 | 2020-06-18 | 大连理工大学 | Semiconductor wafer photoelectrochemical mechanical polishing processing device and processing method |
| CN109465739B (en) * | 2018-12-14 | 2021-07-13 | 大连理工大学 | Semiconductor wafer photoelectrochemistry mechanical polishing processingequipment |
| JP2022512421A (en) * | 2018-12-14 | 2022-02-03 | 大連理工大学 | Photoelectrochemical mechanical polishing processing equipment and processing method for semiconductor wafers |
| CN109866084A (en) * | 2019-04-08 | 2019-06-11 | 北京建筑大学 | A kind of UV photocatalysis assistant chemical mechanical polishing apparatus and polishing method |
| CN112192411A (en) * | 2020-10-12 | 2021-01-08 | 李静雯 | Steel structure polishing and derusting device utilizing thermal expansion effect |
| CN112692720A (en) * | 2020-12-09 | 2021-04-23 | 苏州斯尔特微电子有限公司 | Motion control device of wafer grinding machine |
| CN113334242B (en) * | 2021-06-24 | 2022-11-04 | 大连理工大学 | Processing device and process for diamond wafer ultraviolet light assisted chemical mechanical polishing |
| CN113334242A (en) * | 2021-06-24 | 2021-09-03 | 大连理工大学 | Processing device and process for diamond wafer ultraviolet light assisted chemical mechanical polishing |
| CN114939803B (en) * | 2022-05-25 | 2023-01-03 | 西南交通大学 | Device and method applied to precision machining of 3D printing stainless steel runner |
| CN114939803A (en) * | 2022-05-25 | 2022-08-26 | 西南交通大学 | Device and method applied to precision machining of 3D printing stainless steel runner |
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