CN109465739B - Semiconductor wafer photoelectrochemistry mechanical polishing processingequipment - Google Patents
Semiconductor wafer photoelectrochemistry mechanical polishing processingequipment Download PDFInfo
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- CN109465739B CN109465739B CN201811537196.2A CN201811537196A CN109465739B CN 109465739 B CN109465739 B CN 109465739B CN 201811537196 A CN201811537196 A CN 201811537196A CN 109465739 B CN109465739 B CN 109465739B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a semiconductor wafer photoelectrochemical mechanical polishing processing method and a processing device thereof. The polishing pad is pasted at the bottom of the counter electrode disk, the counter electrode disk is fixed at the bottom of the polishing disk and is provided with a through hole corresponding to the polishing disk, and the counter electrode disk is connected with the negative pole of an external power supply through the conducting slip ring and the inner and outer ring wires above the counter electrode disk. Ultraviolet light emitted by the ultraviolet light source can irradiate the surface of the wafer through the through hole, and polishing liquid can also be sprayed into the through hole to enter a contact area between the wafer and the polishing pad. The photoelectrochemistry mechanical polishing processing device designed by the invention can better realize the processing method related by the invention, the processing device has the advantages of simple operation, easy realization and flexible adjustment of process parameters, and the effects of high removal rate and good surface quality after processing can be obtained in the actual processing of processing the gallium nitride wafer.
Description
Technical Field
The invention relates to the technical field of polishing processing, in particular to a photoelectric chemical mechanical polishing processing device for a semiconductor wafer.
Background
The third generation semiconductor representative material represented by gallium nitride (GaN), silicon carbide (SiC) and diamond is more suitable for manufacturing high-temperature, high-frequency, high-power and radiation-resistant high-power devices than the previous generation semiconductor material due to high thermal conductivity, high breakdown electric field, high electronic saturation rate and high radiation-resistant excellent performance.
When the GaN and SiC crystal materials are used as devices, the materials are required to have higher surface quality and no surface/subsurface damage such as scratches, microcracks, lower dislocation, residual stress and the like. However, GaN and SiC crystal materials have large bond energy and strong chemical inertness, hardly undergo chemical reaction with any acid-base reagent at normal temperature, belong to typical hard and brittle materials which are difficult to process, and in the processing process of the two materials, diamond abrasive grains are usually adopted to grind and grind the materials so as to achieve better surface quality and higher flatness. But inevitably, surface/sub-surface damage is caused to the wafer due to the hardness of the diamond abrasive grains. Hideo Aida et al (Applied Surface Science 292(2014) 531-536) reduced the diamond grain size in GaN grinding process to make the damage depth of GaN wafer reduced continuously, and when the diamond grain size was reduced to 500nm and 50nm, the sub-Surface damage depth corresponding to GaN wafer reached 1.6 μm and 0.26 μm, respectively. In order to completely remove the sub-surface damage after the grinding processing of the 500nm and 50nm diamond, SiO is adopted subsequently2Chemical Mechanical Polishing (CMP) processing by abrasive particles took 150h and 35h, respectively.
Therefore, in the traditional processing process of removing the sub-surface damage by CMP, the extremely high chemical inertness of the material enables the polishing removal rate to be extremely low, and further a series of problems of long processing time, high cost and the like are caused.
Disclosure of Invention
The invention provides a photoelectric chemical mechanical polishing method of a semiconductor wafer and a set of processing device aiming at the method, aiming at the problems of the prior art, and the photoelectric chemical mechanical polishing method is a processing mode that ultraviolet rays are introduced to directly irradiate a polished semiconductor workpiece on the basis of the existing chemical mechanical polishing, and generate photoelectric chemical oxidation under the action of an external electric field in cooperation with the ultraviolet rays, so that an oxidation modified layer of the semiconductor wafer is removed by mechanical polishing.
In one aspect, the present invention provides a method for photoelectrochemical mechanical polishing of a semiconductor wafer, comprising: the semiconductor wafer photoelectrochemistry mechanical polishing processing method, carries on mechanical polishing to the wafer; mechanically polishing a polishing member having a through-hole; during polishing, ultraviolet light irradiates the wafer through the through hole; in the polishing process, polishing liquid is dripped on the surface of the wafer through the through hole, and the polishing liquid comprises abrasive particles; in the polishing process, the wafer is used as an anode and undergoes photoelectrochemical oxidation modification under an applied electric field.
As a preferred technical solution, the polishing member includes a polishing disk and a polishing pad, and the through holes of the polishing disk and the through holes of the polishing pad are in the same layout; the method uses a polishing disc as a cathode.
As a preferred technical solution, the method comprises the steps of:
(1) the wafer is fixed on the polishing head through conductive adhesive, and the wafer axially rotates along with the polishing head after being driven; the polishing head is a conductor; the polishing pad is adhered to the polishing disc, and is driven to contact with the surface of the wafer and generate relative motion;
(2) applying a positive potential to the wafer and a negative potential to the polishing pad;
(3) during polishing, ultraviolet light sequentially penetrates through the through holes of the polishing disc and the polishing pad to irradiate the wafer; the polishing liquid impregnates the contact area of the wafer and the polishing pad through the through holes of the polishing disk and the polishing pad.
According to a preferable technical scheme, the polishing piece comprises a polishing disk and a polishing pad, and a counter electrode disk with a through hole is additionally arranged between the polishing disk and the polishing pad to serve as a cathode; the polishing disk, the counter electrode disk and the polishing pad are consistent in through hole layout.
As a preferred technical solution, the method comprises the steps of:
(1) the wafer is fixed on the polishing head through conductive adhesive, and the wafer axially rotates along with the polishing head after being driven; the polishing head is a conductor; bonding a polishing pad on a counter electrode disk (the counter electrode disk refers to a disk-shaped counter electrode material), wherein the counter electrode disk is fixed on the polishing disk and is provided with a through hole, and the polishing pad is driven to be in contact with the surface of a wafer and to generate relative motion;
(2) applying a positive potential to the wafer and a negative potential to the electrode disk;
(3) in the polishing process, ultraviolet light sequentially penetrates through the polishing disk, the counter electrode disk and the through hole of the polishing pad to irradiate the wafer; the polishing solution is sequentially dipped in the contact area of the wafer and the polishing pad through the through holes of the polishing disk, the counter electrode disk and the polishing pad.
As the preferred technical scheme, the method connects the wafer with the anode of an external power supply, and connects the cathode with the cathode of an external power supply; the external power supply, the wafer and the cathode form a closed loop.
According to a preferable technical scheme, the area ratio of photoelectrochemistry to mechanical action of the method is 1: 12-1: 1.
Preferably, the polishing disk and the polishing pad are positioned above the semiconductor wafer, and the ultraviolet light source is positioned above the polishing disk.
As a preferable technical scheme, the abrasive particles are cerium oxide or silicon oxide; preferably, the abrasive particles have a particle size of 6nm to 100 nm; preferably, the concentration of the abrasive particles is 0.05 to 10 wt%; the supply flow rate of the polishing solution is 50mL/min to 100 mL/min; the rotation speed of the wafer is 100-250rpm, the rotation speed of the polishing disk is 60-150rpm, the polishing pressure is 4-6.5psi, and the ultraviolet intensity is 50-175 mW cm-2。
Preferably, the semiconductor wafer is a gallium nitride wafer.
As a preferred technical scheme, the ultraviolet light source is one or more of a low-pressure mercury lamp, a high-pressure mercury lamp, an LED mercury lamp, a deuterium lamp and a xenon lamp, and the wavelength is less than 400 nm.
The area ratio of photoelectrochemistry to mechanical action described in the present invention means: the area of the through holes in contact with the wafer, i.e., the ratio of the area of the wafer surface exposed by the through holes (the part of the wafer surface irradiated with ultraviolet light undergoes photoelectrochemical oxidation) to the area of the wafer surface remaining covered by the polishing pad (the part is subjected to mechanical polishing by the polishing pad), was calculated based on the diameter and number of the through holes of the polishing pad and the polishing disk, and was recorded as the area ratio of photoelectrochemical to mechanical action.
In order to realize the photoelectrochemistry mechanical polishing processing method, on the other hand, the photoelectrochemistry mechanical polishing processing device is researched and designed. The method and the processing device can achieve the processing effect with faster removal rate.
The invention provides a semiconductor wafer photoelectrochemical mechanical polishing device, which adopts the technical scheme that the semiconductor wafer photoelectrochemical mechanical polishing processing device comprises: a polishing pad having a through-hole; the polishing disc is provided with a through hole and is used for driving the polishing pad to carry out mechanical polishing on the surface of the wafer; a polishing liquid source for supplying polishing liquid, the polishing liquid being dropped on the surface of the wafer through the through holes of the polishing pad and the polishing disk; an ultraviolet light source for supplying ultraviolet light, which irradiates the wafer through the through-holes of the polishing pad and the polishing disk; and an external power source; the wafer is connected with the anode of an external power supply, and the polishing disc is connected with the cathode of an external power supply; the external power supply, the wafer and the polishing disk form a closed loop.
Another semiconductor wafer photoelectrochemical mechanical polishing processing device, comprising: a polishing pad having a through-hole; the polishing disc is provided with a through hole and is used for driving the polishing pad to carry out mechanical polishing on the surface of the wafer; a counter electrode disk having a through hole, between the polishing disk and the polishing pad; a polishing liquid source for supplying polishing liquid, the polishing liquid being dropped on the surface of the wafer through the through holes of the polishing pad and the polishing disk; an ultraviolet light source for supplying ultraviolet light, which irradiates the wafer through the through-holes of the polishing pad and the polishing disk; and an external power source; the wafer is connected with the anode of an external power supply, and the counter electrode disc is connected with the cathode of an external power supply; the external power supply, the wafer and the counter electrode disk form a closed loop.
According to a preferable technical scheme, the polishing solution is a chemical polishing solution, and the chemical polishing solution comprises abrasive particles.
Preferably, the polishing disk and the polishing pad are positioned above the wafer, and the ultraviolet light source is positioned above the polishing disk and the polishing pad.
As a preferred technical solution, the polishing solution source is a polishing solution nozzle, and the polishing solution nozzle is located above the polishing disk.
As a preferable technical scheme, the through holes of the polishing disc are radially distributed from the center to the periphery; preferably, the through holes are periodically distributed in the radial direction of the polishing disk; preferably, the polishing pad has no through-hole in its central portion, and only the outer peripheral portion of the polishing pad is provided with a through-hole at a position contacting the wafer.
Preferably, the through holes of the polishing disk, the counter electrode disk and the polishing pad are arranged in a uniform manner.
As a preferable technical scheme, the power supply of the external electric field is one or more of a direct current power supply, a potentiostat, an electrochemical workstation and a dry battery.
As a preferred solution, the area of the polishing pad is larger than the area of the wafer; preferably, the radius of the polishing pad is greater than the diameter of the wafer; preferably, the radius of the polishing disk is larger than the diameter of the wafer; preferably, the through-hole of the polishing pad is provided at a portion contacting the wafer.
Preferably, the area ratio of the photoelectrochemistry to the mechanical action of the device is 1: 12-1: 1.
Preferably, the through holes are formed only in a circle of the contact area of the polishing pad and the wafer, and the width of the circle is preferably the diameter of the wafer.
Preferably, the through holes are distributed on the polishing pad radially outward from the center of the polishing pad on the circumferences of different diameters, or are distributed uniformly in a certain number on the circumferences of different diameters instead of radially.
As a preferable technical scheme, the device further comprises a polishing solution collecting tank, and the polishing head and the polishing disk are arranged in the polishing solution collecting tank.
As a preferable technical scheme, the polishing pad is one of a polyurethane polishing pad, a non-woven fabric polishing pad and a flannelette polishing pad.
Compared with the prior art: the photoelectrochemistry mechanical polishing method and the polishing device thereof have the following advantages:
(1) high polishing and removing efficiency
The invention adopts the mode that ultraviolet light irradiates the surface of the wafer through the through hole, the wafer and the electrode disk are respectively applied with electric potentials (the wafer is an anode, and the electrode disk is a cathode) to combine the photoelectrochemical action, the wafer can be efficiently oxidized and modified, and then the oxidation modified layer is mechanically removed through the polishing pad and the abrasive particles. In the processing process, the wafer and the polishing disc respectively rotate to generate relative motion, simultaneously, the potential difference between the wafer and the counter electrode and the feeding of the polishing solution cause the photoelectrochemistry modification effect and the mechanical polishing effect to be alternately performed under the irradiation of ultraviolet rays, and the photoelectrochemistry mechanical processing is performed on the wafer. The photoelectrochemistry modification effect and the mechanical polishing effect are alternately carried out, and the method adopts a mode of combining photoelectrochemistry modification with mechanical polishing, so that the advantages of high polishing removal rate and low roughness of a polished wafer can be obtained.
(2) The proportion of the photoelectrochemical modification effect and the mechanical polishing effect can be adjusted
The diameters of the through holes on the polishing disk and the bottom polishing pad, the number of the through holes and the arrangement of the through holes on the polishing disk can be artificially optimized, so that the proportion of the photoelectrochemical modification action to the mechanical polishing action (namely the area ratio of the photoelectrochemical action to the mechanical action) of the wafer in the photoelectrochemical mechanical polishing process can be arbitrarily adjusted and optimized.
(3) No oxidant is required to be added in the polishing process
During the polishing process of the wafer, the electron-hole pairs excited by the ultraviolet light can be separated by the potential applied by an external electric field, and an oxidant is not additionally added into the polishing solution to capture the photo-generated electrons so as to promote the separation of the electron-hole pairs.
(4) The processing device is simple, and the processing method is easy to realize
The processing parameters in the processing device are as follows: polishing pressure, wafer rotating speed, polishing pad rotating speed, solution type and concentration, ultraviolet light source intensity, area ratio of photoelectrochemistry and mechanical action, and potential difference of the wafer and the counter electrode can be adjusted according to actual workpiece types to achieve better processing effect.
Drawings
FIG. 1 is a schematic diagram of a method of photoelectrochemical mechanical polishing of a semiconductor wafer of the present invention.
FIG. 2 is a schematic diagram of through holes on an electrode pad, a polishing pad and a polishing pad in the method for photoelectrochemical mechanical polishing of a semiconductor wafer according to the present invention.
FIG. 3 is a schematic view of an apparatus for photoelectrochemical mechanical polishing of a semiconductor wafer of the present invention.
The various identified components in FIG. 3 are: the polishing device comprises leveling screws 13, a right-angle fixing plate 14, an adapter plate 15, an L-shaped supporting plate 16a, a flange plate 17, an outer spherical bearing 18, a conductive sliding ring 2, a right-angle motor 19, a motor bracket 20, an elastic coupling 21, a crossed roller bearing 22a, a step shaft I23, a polishing head 3, a polishing pad 5, a step shaft II 24, a conductive sliding ring 11, a wafer 4, a counter electrode plate 6, a polishing disk 7, a polishing solution pool 1, an ultraviolet light source 10, an elastic coupling 25, a motor bracket 26, a motor 27, an adapter plate 28, a module panel 29, springs 30, guide rails 31, sliders 32, a module bottom plate 33, vertical supporting plates 34a and 34b, a right-angle supporting plate 35 and a bottom plate 36.
FIG. 4 is a top view of an apparatus for photoelectrochemical mechanical polishing of a semiconductor wafer of the present invention;
FIG. 5 is an axial view of an apparatus for photoelectrochemical mechanical polishing processing of a semiconductor wafer of the present invention.
FIG. 6 shows the original morphology of the GaN wafer surface, with a surface roughness value Ra of 1.16 nm.
FIG. 7 is a graph of the surface topography of a GaN wafer after photoelectrochemical mechanical polishing processing under the processing conditions of example 1, with a wafer surface roughness value Ra of 0.48 nm;
FIG. 8 is a graph of the surface topography of a GaN wafer after photoelectrochemical mechanical polishing processing in the processing conditions of example 2, with a wafer surface roughness value Ra of 0.1nm (atomic force microscope field of view of 5X 5 μm)2)；
Detailed Description
The invention will be further described with reference to the accompanying drawings.
(1) Fixing the wafer on a polishing head, and driving the wafer to axially rotate along with the polishing head; the wafer is connected and conducted through the bonding of the conductive adhesive and the metal part of the polishing head, and the polishing head is connected with the inner ring of the conductive slip ring through a lead and then connected with the outer ring of the conductive slip ring to form a passage;
(2) bonding a polishing pad on a counter electrode disk, wherein the counter electrode disk is fixed on the polishing disk, the polishing pad is in contact with the surface of a wafer and generates relative motion by driving, and the counter electrode disk can be connected with an inner ring lead of a conductive slip ring and further connected with an outer ring lead to form a passage;
(3) through holes are processed on the counter electrode disk and the polishing disk, and through holes are correspondingly processed on the polishing pad (preferably adhered to the bottom of the counter electrode disk); during the polishing process, ultraviolet rays are positioned above the polishing disk, and the ultraviolet rays can directly irradiate the surface of the wafer through the polishing disk, the counter electrode disk and the through holes of the polishing pad; the polishing liquid is impregnated into the surface of the wafer through the polishing disk and the counter electrode disk and the through-holes of the polishing pad.
(4) The external negative potential can sequentially pass through the outer ring lead of the conductive slip ring above the counter electrode disk to the inner ring lead and then is connected to the counter electrode disk, and the external positive potential can sequentially pass through the outer ring lead of the conductive slip ring below the wafer to the inner ring lead and then is connected to the wafer. The negative, positive potential applied to the electrode disk and the wafer, respectively, may form a potential difference between the two during processing.
The semiconductor wafer is preferably a gallium nitride wafer.
The photoelectrochemistry mechanical polishing method is a processing mode that on the basis of the existing chemical mechanical polishing, ultraviolet rays can directly irradiate a polished semiconductor workpiece through a through hole on a polishing disc, an external electric field can be applied to the semiconductor workpiece and an electrode disc in the polishing process, the semiconductor workpiece is subjected to photoelectrochemistry oxidation modification under the irradiation of the ultraviolet rays and the action of the external electric field, and then a modified layer is mechanically polished and removed by a polishing pad.
The photoelectrochemical mechanical polishing device includes:
the polishing head is used for fixing the wafer and communicating the wafer with an external circuit through conductive adhesive between the polishing head and the wafer;
the polishing pad is bonded on the counter electrode disc through a back glue layer of the polishing pad;
the counter electrode disk is fixed on the polishing disk through a screw, and a through hole which is the same as that of the polishing disk is processed on the counter electrode disk;
the polishing disk is connected with the counter electrode disk, the wafer is pressurized in the polishing process, and the polishing disk is provided with a through hole;
the polishing solution spray head is positioned above the polishing disc and used for spraying polishing solution; the supplied polishing liquid can enter the polishing area through the through hole.
The first driving transmission part is connected with the polishing disc and is used for driving the fixed shaft of the polishing disc to rotate;
the second driving transmission part is connected with the polishing head and is used for driving the polishing head to further drive the wafer to rotate around the fixed shaft;
the supporting part is used for supporting and fixing the first driving transmission part, the second driving transmission part, the polishing head, the polishing disk and the polishing liquid spray head;
the external negative potential is connected to the counter electrode disk after passing through the outer ring lead of the conductive slip ring above the counter electrode disk to the inner ring lead, and the external positive potential can be connected to the wafer after passing through the outer ring lead of the conductive slip ring below the wafer to the inner ring lead.
The polishing pad is arranged on one surface, in contact with the surface of the wafer, of the counter electrode disc, the polishing pad is provided with a through hole, preferably, the polishing pad is adhered to the bottom of the counter electrode disc, and the through holes are correspondingly machined in the counter electrode disc and the polishing disc.
The polishing disk, to all processing the through-hole on electrode disc and the polishing pad of bottom paste, the wafer is at the in-process of processing, and the ultraviolet ray that is located the polishing disk top can reach the wafer surface through the through-hole in the polishing process, carries out the light spot chemical oxidation effect to the wafer under the assistance of adding external electric field for the work piece by ultraviolet irradiation part takes place to modify.
Preferably, the polishing disc is sequentially connected with the connecting shaft through the elastic coupling, and the driving motor can drive the polishing shaft to rotate around the fixed shaft.
The device also comprises a polishing solution collecting tank, and the polishing head and the polishing disk are arranged in the polishing solution collecting tank.
The polishing pressure can be loaded by the polishing disk during polishing.
The polishing pad and the wafer generate relative velocity when they rotate respectively.
The device also comprises a linear module, wherein the linear module comprises a module panel, a guide rail sliding block and a module bottom plate, the guide rail is fixed on the module bottom plate, and the sliding block is fixed with the module panel and can linearly slide on the guide rail. The dead weight of the motor, the adapter plate and the linear module can be used as a processing pressure source for photoelectrochemical mechanical polishing.
Be equipped with the spring between module panel and the module bottom plate, the accessible is changed the spring of different stiffness coefficients and is come the quantitative adjustment polishing in-process machining pressure, when the dead weight of whole part all can not satisfy polishing pressure, can additionally increase the loading that the counter weight realized great polishing pressure.
The polishing disk can optimize the positions and sizes of the electrode disk and the through holes on the polishing pad;
further, the polishing pad can be optimally designed for the size and the distribution position of the through holes on the electrode disc and the polishing disc, and the time proportion of the ultraviolet light irradiated part and the mechanical polishing part of the wafer can be adjusted by changing the size and the position of the through holes in the processing process. As shown in FIG. 2, the through holes are uniformly distributed on concentric circles of different diameters on the polishing disk, and the radius (D) of the concentric circle corresponding to each circle of through holes1Or Dn) The optimal design can be carried out, the distance between the concentric circles where each circle of through holes are located can also be optimally designed, and the diameter (d) of each through hole1) And the number of the through holes can be optimally designed.
During photoelectrochemical mechanical polishing, the wafer and the polishing pad are respectively driven by the driving motor, the wafer and the polishing pad generate relative motion, the dead weight of the polishing disk and the driving device thereof provides processing pressure, ultraviolet rays can irradiate the surface of the wafer through the through hole, the potential of an external electric field can be respectively applied to the wafer and the counter electrode, and in photoelectrochemical mechanical polishing, photoelectrochemical oxidation modification and mechanical polishing continuously and alternately perform polishing processing on the wafer.
Referring to fig. 1: the polishing device comprises a polishing liquid tank 1, a conductive slip ring 2, a polishing head 3, a wafer 4, a polishing pad 5, a counter electrode disc 6, a polishing disc 7, a through hole 8, a polishing liquid spray head 9, an ultraviolet lamp 10, a conductive slip ring 11 and an external power supply 12. The wafer 4 is fixed on the polishing head 3 through conductive adhesive bonding, the inner ring lead of the conductive slip ring 2 can be connected with the wafer 4 and is communicated with the outer ring lead of the conductive slip ring 2 so as to be connected with the anode of the external power supply 12, the inner ring of the conductive slip ring 2 is tightly fixed on the shaft of the polishing head and can rotate along with the conductive slip ring, and the polishing head 3 can be driven by a motor to drive the wafer to rotate; the polishing pad 5 is adhered to the bottom of the counter electrode disk 6 through a back glue layer, the counter electrode disk 6 is fixed on the polishing disk 7 through screws, the counter electrode disk 6 is connected to an inner ring lead of the conductive slip ring 11 and then connected with an outer ring lead of the conductive slip ring 11, the outer ring lead of the conductive slip ring 11 is connected with a negative electrode of an external power supply 12, and an inner ring of the conductive slip ring 11 is tightly fixed on a step shaft of the polishing disk and can rotate along with the step shaft. The polishing pad 5, the counter electrode disk 6 and the polishing disk 7 are all provided with through holes 8; ultraviolet light emitted by the ultraviolet light source 10 can irradiate the surface of the wafer 4 through the through hole 8, meanwhile, polishing liquid sprayed by the polishing liquid spray head 9 can also enter a contact area between the wafer 4 and the polishing pad 5 through the through hole 8, the wafer 4 is connected with the anode of an external power supply 12, the counter electrode disc 6 is connected with the cathode of the external power supply 12, a conductive medium such as sulfuric acid is added into the polishing liquid, potassium sulfate is used as a supporting electrolyte, the wafer 4 and the counter electrode disc 6 can be conducted through the polishing liquid, and the wafer 4 and the counter electrode disc 6 can be provided with a potential difference by the external power supply 12 in the machining process.
The process of the photoelectrochemistry mechanical polishing processing method is as follows: the wafer 4 is fixed on the polishing head 8 through conductive adhesive bonding, and is driven by the motor to rotate along with the polishing head 8, the wafer 4 sequentially passes through the conductive adhesive, the polishing head 3, the inner ring lead of the conductive slip ring 2, and the outer ring lead of the conductive slip ring 2 to be connected with the positive pole of the external power supply 12. Ultraviolet rays emitted by an ultraviolet light source 10 can irradiate the surface of the wafer 4 through the polishing pad 5, the through holes in the counter electrode disk 6 and the polishing disk 7, the counter electrode disk 6 sequentially passes through the inner ring lead of the conductive slip ring 11, the outer ring lead of the conductive slip ring 11 and the negative pole of the external power supply 12, polishing liquid sprayed by the polishing liquid spray head 9 enters a contact area between the wafer 4 and the polishing pad 5, a conductive medium in the polishing liquid, such as sulfuric acid, potassium sulfate can be used as a supporting electrolyte to be filled between the wafer 4 and the counter electrode 6, the counter electrode disk 6 and the wafer 4 are conducted, and a potential difference between the wafer 4 and the counter electrode disk 6 is provided by the external power supply. The ultraviolet rays emitted by the ultraviolet light source 10 irradiate the surface of the wafer 4, and the action of the ultraviolet irradiation and the external electric field can generate photoelectrochemistry oxidation modification effect on the wafer 4. The polishing pad 5 is adhered to the bottom of the counter electrode disk 6, the counter electrode disk 6 is connected to the bottom of the polishing disk 7 through a screw, and the polishing disk is driven to rotate by the motor, so that the rotation of the polishing pad 5 and the rotation of the wafer 4 generate relative motion. A polishing pressure F may be applied to a contact region of the wafer 4 and the polishing pad 7 through the polishing disk 7. After the pressure is loaded, the wafer 4 can be mechanically polished by the relative movement of the wafer 4 and the polishing pad 5, an oxidation modification layer formed on the wafer 4 by photoelectrochemistry is removed, after the oxidation modification layer is mechanically removed, a new surface is exposed and is then photoelectrochemically modified, and the photoelectrochemistry action and the mechanical polishing action are alternately carried out in such a cycle that photoelectrochemistry mechanical polishing processing can be carried out on the wafer 4.
A machining apparatus designed for carrying out the machining method will now be described in detail with reference to specific embodiments:
referring to fig. 3, 4 and 5, 4 leveling screws 13 support the bottom plate 36 and the right angle fixing plate 14, and are mounted on the bottom plate 36 through screws to support the polishing head 3 and the driving transmission part thereof. The adapter plate 15 is fixed on the right-angle support plate 14 through screws, the right-angle motor 19 is installed on the motor bracket 20, and the motor bracket 20 is installed on the adapter plate 15 through screws. The wafer 4 is bonded to the polishing head 3 by a conductive adhesive, and the polishing head 3 is mounted on the step shaft 23 by screws. The contact part of the polishing head 3 and the conductive adhesive is conductive metal, the metal part on the polishing head 3 is connected to the inner ring wire of the conductive slip ring 2, the inner ring of the conductive slip ring 2 is fastened on the step shaft 23 through a screw, the inner ring wire can synchronously rotate along with the step shaft 23, and the outer ring wire of the conductive slip ring 2 is communicated with the inner ring wire so as to communicate the wafer 4. One shoulder of the step shaft 23 abuts against the bearing inner ring of the outer spherical bearing 18, the outer spherical bearing 18 can bear a certain amount of axial load, and has a proper aligning function, so that when the wafer 4 is in contact with the polishing pad 5, due to installation errors or when the surface type errors of the wafer 4 and the polishing head 3 are small, the wafer 4 and the polishing pad 5 can be in good parallel joint contact through the proper aligning function of the outer spherical bearing 18. The spherical outside bearing 18 is fixed to the flange 17 by screws, the flange 17 is mounted to the inner ring of the cross roller bearing 22a by screws, the outer ring of the cross roller bearing 22a is fixed to the L-shaped support plate 16a by screws, and the L-shaped support plate 16a is fixed to the adapter plate 15 by screws. The step shaft 23 is supported on the bearing inner ring of the outer spherical bearing 18 by a shoulder, sequentially penetrates through the flange 17 (the shaft diameter is smaller than the aperture of the flange), the crossed roller bearing 23a (the shaft diameter is smaller than the aperture of the bearing inner ring) and the L-shaped support plate 16a (the shaft diameter is smaller than the aperture of the L-shaped support plate) are connected with the motor shaft of the right-angle motor 19 through the elastic coupling 21, and the step shaft 23 plays a role in transmitting driving torque and supporting the polishing head 3. The polishing pad 5 is adhered to the counter electrode disk 6 through a back glue layer of the polishing pad, the counter electrode disk 6 is installed on the polishing disk 7 through screws, through holes are formed in the same positions of the counter electrode disk 6 and the polishing disk 7 so that ultraviolet rays emitted by the ultraviolet light source 10 and polishing liquid enter a contact area (seen from a top view 4) between the wafer 4 and the polishing pad, and the polishing liquid pool 1 collects and intensively discharges waste polishing liquid. The inner ring of the conductive slip ring 11 is tightly fixed on the step shaft II 24 and synchronously rotates along with the inner ring, the inner ring lead is connected with the counter electrode disk 6, the potential on the counter electrode disk 6 can sequentially pass through the inner ring lead of the conductive slip ring 11, and the outer ring lead is connected with the negative pole of an external power supply. The polishing disk 7 is fixed on a step shaft II 24, the shaft shoulder of the step shaft II 24 is propped against the inner ring of the crossed roller bearing 22b, the step shaft II 24 penetrates through the L-shaped supporting plate 16b to be connected with an elastic coupling 25, and the other end of the elastic coupling 25 is connected with a motor shaft of a motor 27. The motor 27 is mounted on a motor bracket 26, the motor bracket 26 is fixed on an adapter plate 28 through screws, the adapter plate 28 is mounted on a module panel 29 through screws, the module panel 29 is connected with a plurality of sliding blocks 32, the sliding blocks 32 can move linearly on a guide rail 31, and the guide rail 31 is mounted on a module bottom plate 33. A spring 30 is connected in series between the module face plate 29 and the module base plate 33. The dead weight of the polishing pad 5, the counter electrode disk 6, the polishing disk 7, the step shaft II 24, the conductive slip ring 11, the crossed roller bearing 22b, the elastic coupling 25, the motor bracket 26, the motor 27, the adapter plate 28, the module panel 29, the spring 30 and the slider 32 can be used as a polishing pressure source during photoelectrochemical mechanical polishing processing, and if the polishing pressure needs to be changed, the dead weight can be realized by changing the stiffness coefficient of the spring 30. The module bottom plate 33 is fixed to an upright support plate 34a, the upright support plate 34a is fixed to an upright support plate 34b, the upright support plate 34b is fixed to a right-angle support plate 35 by screws, and the right-angle support plate 35 is fixed to a bottom plate 36.
The technical effects of the present invention will be described below with reference to a specific example in which the processing method is implemented using the processing apparatus of the present invention.
The GaN wafer used in this example was a GaN free standing wafer grown by HVPE method with a wafer diameter of 1 inch (25.4mm) and a wafer thickness of about 350 μm, and the initial wafer surface morphology was measured using an atomic force microscope after diamond grinding, and is shown in fig. 6. In FIG. 6, the surface roughness Ra of the surface of the starting wafer after grinding with the diamond superabrasive grains was 1.16nm, and a large number of scratches were observed after grinding with diamond.
The removal rate of the wafer is converted by weighing the mass before and after processing by a precision balance and calculating the mass difference before and after processing. Before weighing, acetone, alcohol, hydrofluoric acid and deionized water are sequentially adopted to clean the GaN wafer, and errors caused by adhesion objects such as dust and the like attached to the surface of the wafer to the wafer weight are removed.
(1) Bonding a GaN wafer on a wafer clamp by using conductive adhesive, connecting the wafer clamp with the clamp by using a conductive slip ring inner ring lead, mounting the wafer clamp on a step shaft, tightly fixing a conductive slip ring inner ring on the step shaft, and taking a polishing pad as SUBA 800;
(2) the ultraviolet light source is positioned right above the polishing disc, and after the light source is started, ultraviolet rays can irradiate the surface of the wafer;
(3) the negative electrode of the external power supply is connected with the counter electrode disc, and the positive electrode of the external power supply is connected with the workpiece;
(4) the polishing solution nozzle sends the polishing solution into a contact area between the wafer and the polishing pad through the through hole, the supply flow rate of the polishing solution is 80mL/min, and SiO is2Abrasive grain mass concentration (10 wt.%), SiO2The mass grain diameter of the abrasive particles is 25nm, and the specific components of the polishing solution are shown in Table 1;
(5) the rotation speed of the GaN wafer is 250rpm, the rotation speed of the polishing disk is 150rpm, the polishing pressure is 6.5psi, and the ultraviolet intensity is 175mW cm-2Polishing time was 1 h.
(5) Heating to melt the conductive adhesive, taking down the wafer, sequentially cleaning the wafer by using acetone, alcohol, 2 wt% hydrofluoric acid and deionized water, drying the wafer by using nitrogen, weighing the mass, and measuring the surface roughness after polishing.
TABLE 1 EXAMPLES Condition and photoelectrochemical mechanical polishing Effect List
The different processing conditions in table 1 correspond to different removal rates for the photoelectrochemical mechanical polishing process of the wafer. The surface quality of the wafers processed in example 1 and example 2 was measured, and the measurement results are shown in fig. 7 and 8, respectively. The wafer surface improvement was found to be significant when compared to the original wafer topography in fig. 6. The surface roughness can be reduced by 0.48nm respectively. In FIG. 7, the wafer surface is relatively flat, clear atomic steps are visible, and the surface roughness Ra of FIG. 8 is up to 0.1 nm. The scratch damage of the original wafer surface caused by diamond grinding is removed by polishing.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (11)
1. A semiconductor wafer photoelectrochemical mechanical polishing processing device,
the method comprises the following steps:
a polishing pad having a through-hole;
the polishing disc is provided with a through hole and is used for driving the polishing pad to carry out mechanical polishing on the surface of the wafer;
a polishing liquid source for supplying polishing liquid, the polishing liquid being dropped on the surface of the wafer through the through holes of the polishing pad and the polishing disk;
an ultraviolet light source for supplying ultraviolet light, which irradiates the wafer through the through-holes of the polishing pad and the polishing disk;
and an external power source;
the wafer is connected with the anode of an external power supply, and the polishing disc is connected with the cathode of the external power supply; the external power supply, the wafer and the polishing disc form a closed loop;
the polishing disc and the polishing pad are positioned above the wafer, and the ultraviolet light source is positioned above the polishing disc and the polishing pad; the polishing solution source is a polishing solution spray head, and the polishing solution spray head is positioned above the polishing disc;
the through holes of the polishing disc are radially distributed from the center to the periphery; the wafer rotation speed is 100-250rpm, and the polishing disk rotation speed is 60-150 rpm.
2. The photoelectrochemical mechanical polishing processing device for a semiconductor wafer as recited in claim 1, wherein the through holes of the polishing pad and the through holes of the polishing disk are arranged in a uniform pattern.
3. A semiconductor wafer photoelectrochemical mechanical polishing processing device,
the method comprises the following steps:
a polishing pad having a through-hole;
the polishing disc is provided with a through hole and is used for driving the polishing pad to carry out mechanical polishing on the surface of the wafer;
a counter electrode disk having a through hole, between the polishing disk and the polishing pad;
a polishing liquid source for supplying polishing liquid, the polishing liquid being dropped on the surface of the wafer through the through holes of the polishing pad and the polishing disk;
an ultraviolet light source for supplying ultraviolet light, which irradiates the wafer through the through-holes of the polishing pad and the polishing disk;
and an external power source;
the wafer is connected with the anode of an external power supply, and the counter electrode disk is connected with the cathode of the external power supply; the external power supply, the wafer and the counter electrode disk form a closed loop;
the polishing disc and the polishing pad are positioned above the wafer, and the ultraviolet light source is positioned above the polishing disc and the polishing pad; the polishing solution source is a polishing solution spray head, and the polishing solution spray head is positioned above the polishing disc;
the through holes of the polishing disc are radially distributed from the center to the periphery; the wafer rotation speed is 100-250rpm, and the polishing disk rotation speed is 60-150 rpm.
4. The photoelectrochemical polishing processing device for a semiconductor wafer as set forth in claim 3, wherein the through holes of the polishing pad, the through holes of the counter electrode pad, and the through holes of the polishing pad are arranged in a uniform pattern.
5. The photoelectrochemical mechanical polishing processing device for semiconductor wafers as set forth in claim 1 or 3, wherein the polishing liquid is a chemical polishing liquid, and the chemical polishing liquid includes abrasive grains.
6. The photoelectrochemical mechanical polishing processing device for a semiconductor wafer as set forth in claim 1 or 3, wherein the through holes of the polishing pad are periodically distributed in a radial direction of the polishing pad.
7. The photoelectrochemical mechanical polishing processing device for a semiconductor wafer as set forth in claim 6, wherein the through hole is not provided in the central portion of the polishing pad, and the through hole is provided only in a position of the outer peripheral portion of the polishing pad which is in contact with the wafer.
8. The photoelectrochemical mechanical polishing processing device for semiconductor wafers as set forth in claim 1 or 3, wherein the external power source is one or more of a direct current power source, a potentiostat, an electrochemical workstation, and a dry cell battery.
9. The photoelectrochemical mechanical polishing processing device for a semiconductor wafer as set forth in claim 1 or 3, wherein the area of the polishing pad is larger than the area of the wafer; the through hole of the polishing pad is disposed at a portion contacting the wafer.
10. The semiconductor wafer photoelectrochemical mechanical polishing processing device of claim 9, wherein a radius of the polishing pad is larger than a diameter of the wafer; the radius of the polishing disk is larger than the diameter of the wafer.
11. The apparatus of claim 1 or 3, wherein the apparatus has an area ratio of photoelectrochemical to mechanical action of 1:12 to 1: 1.
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| PCT/CN2019/125072 WO2020119779A1 (en) | 2018-12-14 | 2019-12-13 | Semiconductor wafer photoelectrochemical mechanical polishing processing device and processing method |
| JP2021533602A JP7281226B2 (en) | 2018-12-14 | 2019-12-13 | Photoelectrochemical mechanical polishing processing apparatus and processing method for semiconductor wafer |
| US17/413,939 US20220088740A1 (en) | 2018-12-14 | 2019-12-13 | Semiconductor wafer photoelectrochemical mechanical polishing processing device and processing method |
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| CN110197789B (en) * | 2019-05-31 | 2021-04-06 | 西安理工大学 | Ultrasonic-assisted electrochemical mechanical polishing device and method for SiC single crystal wafer |
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| CN113334242B (en) * | 2021-06-24 | 2022-11-04 | 大连理工大学 | Processing device and process for diamond wafer ultraviolet light assisted chemical mechanical polishing |
| CN113814887B (en) * | 2021-10-25 | 2023-01-24 | 广东省大湾区集成电路与***应用研究院 | Chemical mechanical polishing equipment and method |
| CN115415857B (en) * | 2022-09-14 | 2023-10-20 | 大连理工大学 | Photoelectrochemical mechanical polishing device and efficient material removal and adjustment method |
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