JPS61270060A - Polishing method for wafer - Google Patents
Polishing method for waferInfo
- Publication number
- JPS61270060A JPS61270060A JP11227585A JP11227585A JPS61270060A JP S61270060 A JPS61270060 A JP S61270060A JP 11227585 A JP11227585 A JP 11227585A JP 11227585 A JP11227585 A JP 11227585A JP S61270060 A JPS61270060 A JP S61270060A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- polishing
- abrasive plate
- chemical solution
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はウェハを鏡面研摩する研摩方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a polishing method for mirror polishing a wafer.
ウェハの鏡面研摩に従来用いられている方法には、ウェ
ハを例えば二酸化シリコン５ｉｎ２をアルカリの化学液
に懸濁した研摩液で、ポリウレタン等の高分子材料を主
成分とする研摩板に押しつけて、研摩板とウェハとの相
対運動により、ウェハを加工する方法がある。この従来
の方法では加工速度を上げるためにはウェハの研摩板へ
の押しつけ力を大きくしなければならない。しかし、研
摩板はポリウレタン等の粘弾性体で構成されているため
、ウェハの端面に大きな圧力が作用し、端面がだれる結
果、平面度が悪化する欠点がある。Conventionally used methods for mirror polishing wafers include pressing the wafer against a polishing plate whose main component is a polymeric material such as polyurethane using a polishing solution containing, for example, 5 in 2 silicon dioxide suspended in an alkaline chemical solution. There is a method of processing a wafer by relative movement between a polishing plate and a wafer. In this conventional method, in order to increase the processing speed, it is necessary to increase the force with which the wafer is pressed against the polishing plate. However, since the polishing plate is made of a viscoelastic material such as polyurethane, a large pressure is applied to the end face of the wafer, causing the end face to sag and resulting in poor flatness.
また、化学液中でウェハを研摩する化学研摩の方法があ
るが、化学液のエツチング速度の結晶方位による選択性
のため、表面あらさが大きくなる欠点がある。There is also a chemical polishing method in which a wafer is polished in a chemical solution, but this method has the drawback of increasing surface roughness due to the selectivity of the etching rate of the chemical solution depending on the crystal orientation.
本発明の目的は、これらの欠点を除去せしめて、加工能
率良くウェハ表面を鏡面にすることのできる研摩方法を
得ることにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a polishing method that eliminates these drawbacks and makes the wafer surface mirror-finished with high processing efficiency.
本発明は、ウェハを鏡面研摩するにあたり、ウェハと、
光を通す窓を設けた研摩板とを化学液を介して対向する
ように配置し、前記窓を通して化学液およびウェハに光
を照射しながら、ウェハと研摩板とを化学液を介して相
対運動させることにより、ウェハを鏡面研摩することを
特徴としている。In the present invention, when mirror polishing a wafer, the wafer and
A polishing plate provided with a window through which light is placed is placed so as to face each other with a chemical liquid interposed therebetween, and while the chemical liquid and the wafer are irradiated with light through the window, the wafer and the polishing plate are moved relative to each other through the chemical liquid. The feature is that the wafer is mirror-polished by doing this.
本発明はウェハおよび化学液に光を照射することにより
、ウェハ表面およびまたは化学液を光学的または熱的に
励起することによりウェハと化学液との反応速度を促進
し、かつ化学液を介して研摩板とウェハとを相対運動さ
せることにより、ウェハ表面を機械的に滑らかに鏡面に
できるという考えに基づいてなしたものである。The present invention accelerates the reaction rate between the wafer and the chemical liquid by optically or thermally exciting the wafer surface and/or the chemical liquid by irradiating the wafer and the chemical liquid with light. This is based on the idea that the surface of the wafer can be mechanically smoothed into a mirror surface by moving the polishing plate and the wafer relative to each other.
ウェハ表面の励起についてさらに詳しく述べると、波長
λ、の光が例えばシリコンのバンド間エネルギー１．０
８ ｅ Ｖより小さなエネルギを有するときは低濃度８
１基板は熱的に加熱されにくいが、高濃度Ｓｉ基板に対
しては自由キャリアによる吸収が大きくなるので熱的に
励起され、活性状態にすることができる。To explain the excitation of the wafer surface in more detail, light with a wavelength λ has an interband energy of 1.0 for silicon, for example.
Low concentration 8 when it has energy smaller than 8 e V
One substrate is difficult to heat thermally, but a high-concentration Si substrate can be thermally excited and put into an active state because absorption by free carriers is large.
また、波長λ２の光が例えばＳｉのバンド間エネルギ１
．０８−ｅ Ｖより大きなエネルギを有するときは、Ｓ
ｉ基板は熱的に加熱されるだけでなく、固体的電子を励
起し活性化できるので、高濃度、低濃度Ｓｉ基板に限ら
ず、励起活性状態となる。Also, light with wavelength λ2 has interband energy 1 of Si, for example.
．． 08-e When the energy is greater than V, S
Since the i-substrate is not only thermally heated but also can excite and activate solid-state electrons, it is not limited to high-concentration and low-concentration Si substrates and is brought into an excited active state.
さらに波長λ３の光がＳｉのＦバンドの遷移エネルギ３
．４ｅＶより大きなエネルギを有するときは、Ｓｉ基板
の固体的電子のみならず、波長λ３の光（紫外光）のＳ
ｉに対する吸収係数（α）が１０’／ａｍオーダ以上に
なり極めて表面付近の電子だけを励起活性化することが
できる。Furthermore, the light with wavelength λ3 has a transition energy of 3 in the F band of Si.
．． When the energy is greater than 4eV, not only the solid electrons of the Si substrate but also the S of light (ultraviolet light) with wavelength λ3
The absorption coefficient (α) for i is on the order of 10'/am or more, making it possible to excite and activate only the electrons extremely close to the surface.
以上のように、ウェハを照射する光のエネルギによりウ
ェハ表面を光学的または熱的に励起させ、研摩加工の反
応速度を促進させることが可能となる。As described above, it is possible to optically or thermally excite the wafer surface by the energy of the light that irradiates the wafer, thereby accelerating the reaction rate of polishing.
図面に基づき本発明の研摩方法の実施例について説明す
る。An embodiment of the polishing method of the present invention will be described based on the drawings.
第１図は本発明の一実施例を説明するための図であり、
ウェハとして単結晶シリコン基板を用い 。FIG. 1 is a diagram for explaining one embodiment of the present invention,
A single crystal silicon substrate was used as the wafer.
た場合について述べる。Let's discuss the case.
回転可能な支持基板１に接着したウェハ２と水銀ランプ
の光源３との間に、部分的に光を通す窓４を有する研摩
板５を設ける。この研摩板には、窓４として直径３ ｍ
ｍの穴が２鮒間隔で多数設けられているポリウレタン不
織布を石英ガラス板にはりつけたものを用いる。研摩板
５は、透明な材料よりなる槽６内に回転可能な支柱７に
支持されており、槽６内には化学液８としてフッ化ナト
リウム１モル溶液を、ウェハ２の加工面と研摩板５とが
浸るように入れる。A polishing plate 5 having a window 4 that partially transmits light is provided between a wafer 2 adhered to a rotatable support substrate 1 and a light source 3 of a mercury lamp. This polishing plate has a window 4 with a diameter of 3 m.
A polyurethane nonwoven fabric having a large number of m-sized holes at intervals of 2 mm is used, which is attached to a quartz glass plate. The polishing plate 5 is supported by a rotatable support 7 in a tank 6 made of a transparent material, and in the tank 6, a 1 molar solution of sodium fluoride is applied as a chemical liquid 8 to the processed surface of the wafer 2 and the polishing plate. 5. Add so that it is submerged.
ウェハ２を圧力１０ ｇ ／ ｃｔｌで研摩板５に押し
つけ、研摩板の窓４を通してウェハ２の加工面に光源３
から紫外光９を照射しながら槽６に保持された化学液８
を介して、ウェハ２と研摩板５とを図示矢印の方向に回
転することにより、ウェハ２と研摩板５とが相対運動を
おこし、ウェハ２が研摩される。紫外光９を照射するこ
とにより、ウェハ２およびまたは化学液８が励起活性状
態になり、反応しやすくなるため反応速度が上がり、さ
らに研摩板５によりウェハ２の表面を摩擦するため表面
が滑らかに機械的に加工され、ウェハを鏡面にしながら
加工速度を増加することができる。The wafer 2 is pressed against the polishing plate 5 with a pressure of 10 g/ctl, and the light source 3 is applied to the processing surface of the wafer 2 through the window 4 of the polishing plate.
A chemical liquid 8 held in a tank 6 while being irradiated with ultraviolet light 9 from
By rotating the wafer 2 and the polishing plate 5 in the direction of the arrow shown in the figure, the wafer 2 and the polishing plate 5 cause relative movement, and the wafer 2 is polished. By irradiating the ultraviolet light 9, the wafer 2 and/or the chemical liquid 8 become excited and active, making them more likely to react, increasing the reaction rate, and furthermore, the polishing plate 5 rubs the surface of the wafer 2, making the surface smooth. It is mechanically processed and can increase the processing speed while making the wafer a mirror surface.
本実施例によれば、光源を使用しない場合に比べて、加
工速度を５倍に上げることができ、表面あらさも良好な
鏡面が得られた。According to this example, the processing speed could be increased five times compared to the case where no light source was used, and a mirror surface with good surface roughness was obtained.
以上の実施例では、ウェハを研摩板に押しつけて研摩し
たが、化学液の流体潤滑作用を利用して、研摩板に接触
することなくウェハ表面を滑らかにする方法を用いても
よい。In the above embodiments, the wafer was polished by pressing it against the polishing plate, but it is also possible to use a method of smoothing the wafer surface without contacting the polishing plate by utilizing the fluid lubrication effect of the chemical liquid.
また、以上の実施例では、シリコンウェハについて述べ
たが、他の半導体単結晶基盤例えばＧａＡｓ、ＩｎＰに
ついても本発明の方法を用いることができる。Further, in the above embodiments, silicon wafers have been described, but the method of the present invention can also be used for other semiconductor single crystal substrates such as GaAs and InP.
さらに本発明は以上の実施例に限定されるものではなく
、光源の種類、研摩板の材料等についても適宜選択し得
ることは勿論である。Further, the present invention is not limited to the above embodiments, and it goes without saying that the type of light source, the material of the polishing plate, etc. can be selected as appropriate.
従来の方法では、例えばポリウレタン等の高分子材料か
らなる粘弾性体の研摩板に研摩液を介して、高圧で押し
つけてウェハを研摩するために、ウェハ端面のだれも大
きく平面度が悪化していたのに対し、本発明の方法によ
れば圧力を大きくすることなく光エネルギによってウェ
ハ表面およびまたは化学液を励起、活性化し、反応速度
を増加させることにより加工速度を増し、かつウェハ表
面を摩擦することにより表面を鏡面にしていくことがで
きるので、平面度の優れたウェハを効率良く得ることが
できる。In conventional methods, the wafer is polished by pressing the wafer against a viscoelastic polishing plate made of a polymeric material such as polyurethane at high pressure through a polishing liquid, which greatly deteriorates the flatness of the wafer edge. On the other hand, the method of the present invention uses light energy to excite and activate the wafer surface and/or the chemical liquid without increasing the pressure, increases the reaction rate, increases the processing speed, and frictionally rubs the wafer surface. By doing so, the surface can be made mirror-like, and wafers with excellent flatness can be efficiently obtained.
第１図は本発明の研摩方法による研摩状態を示す図であ
る。
■・・・・・・支持基盤
２・・・・・・ウェハ
３・・・・・・光源
４・・・・・・窓
５・・・・・・研摩板
６・・・・・・槽
７・・・・・・支柱
８−・・・化学液
９・・・・・・光
代理人 弁理士 岩 佐 義 幸
第１図FIG. 1 is a diagram showing a polishing state by the polishing method of the present invention. ■... Support base 2... Wafer 3... Light source 4... Window 5... Polishing plate 6... Tank 7... Pillar 8-... Chemical liquid 9... Hikari agent Patent attorney Yoshiyuki Iwasa Figure 1
Claims (1)
通す窓を設けた研摩板とを化学液を介して対向するよう
に配置し、前記窓を通して化学液およびウェハに光を照
射しながら、ウェハと研摩板とを化学液を介して相対運
動させることにより、ウェハを鏡面研摩することを特徴
とするウェハの研摩方法。(1) When mirror polishing a wafer, the wafer and a polishing plate provided with a window through which light is placed are placed so as to face each other with a chemical liquid interposed therebetween, and while irradiating the chemical liquid and the wafer with light through the window, A wafer polishing method characterized by mirror polishing a wafer by moving the wafer and a polishing plate relative to each other via a chemical liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11227585A JPS61270060A (en) | 1985-05-27 | 1985-05-27 | Polishing method for wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11227585A JPS61270060A (en) | 1985-05-27 | 1985-05-27 | Polishing method for wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61270060A true JPS61270060A (en) | 1986-11-29 |
Family
ID=14582619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11227585A Pending JPS61270060A (en) | 1985-05-27 | 1985-05-27 | Polishing method for wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61270060A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6277236B1 (en) * | 1999-06-17 | 2001-08-21 | National Semiconductor Corporation | Light sensitive chemical-mechanical polishing apparatus and method |
| US6537134B2 (en) | 2000-10-06 | 2003-03-25 | Cabot Microelectronics Corporation | Polishing pad comprising a filled translucent region |
| JP2003318139A (en) * | 2002-04-22 | 2003-11-07 | Tokai Univ | Method for polishing silicon wafer |
| US6876454B1 (en) | 1995-03-28 | 2005-04-05 | Applied Materials, Inc. | Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations |
| US6875078B2 (en) | 1995-03-28 | 2005-04-05 | Applied Materials, Inc. | Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations |
| US7169015B2 (en) | 1995-05-23 | 2007-01-30 | Nova Measuring Instruments Ltd. | Apparatus for optical inspection of wafers during processing |
| JP4956754B2 (en) * | 2005-11-11 | 2012-06-20 | 国立大学法人九州工業大学 | Polishing processing method and apparatus |
| CN107877352A (en) * | 2017-10-23 | 2018-04-06 | 大连理工大学 | Semiconductor wafer optical electro-chemistry mechanical polishing apparatus |
-
1985
- 1985-05-27 JP JP11227585A patent/JPS61270060A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6876454B1 (en) | 1995-03-28 | 2005-04-05 | Applied Materials, Inc. | Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations |
| US6875078B2 (en) | 1995-03-28 | 2005-04-05 | Applied Materials, Inc. | Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations |
| US7775852B2 (en) | 1995-03-28 | 2010-08-17 | Applied Materials, Inc. | Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations |
| US7169015B2 (en) | 1995-05-23 | 2007-01-30 | Nova Measuring Instruments Ltd. | Apparatus for optical inspection of wafers during processing |
| US6277236B1 (en) * | 1999-06-17 | 2001-08-21 | National Semiconductor Corporation | Light sensitive chemical-mechanical polishing apparatus and method |
| US6458291B2 (en) | 1999-06-17 | 2002-10-01 | National Semiconductor Corporation | Light sensitive chemical-mechanical polishing aggregate |
| US6458704B2 (en) | 1999-06-17 | 2002-10-01 | National Semiconductor Corporation | Light sensitive chemical-mechanical polishing method |
| US6537134B2 (en) | 2000-10-06 | 2003-03-25 | Cabot Microelectronics Corporation | Polishing pad comprising a filled translucent region |
| JP2003318139A (en) * | 2002-04-22 | 2003-11-07 | Tokai Univ | Method for polishing silicon wafer |
| JP4956754B2 (en) * | 2005-11-11 | 2012-06-20 | 国立大学法人九州工業大学 | Polishing processing method and apparatus |
| CN107877352A (en) * | 2017-10-23 | 2018-04-06 | 大连理工大学 | Semiconductor wafer optical electro-chemistry mechanical polishing apparatus |
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