CN109616412A - A kind of semiconductor wafer processing method that photochemistry is combined with mechanical polishing - Google Patents
A kind of semiconductor wafer processing method that photochemistry is combined with mechanical polishing Download PDFInfo
- Publication number
- CN109616412A CN109616412A CN201811535751.8A CN201811535751A CN109616412A CN 109616412 A CN109616412 A CN 109616412A CN 201811535751 A CN201811535751 A CN 201811535751A CN 109616412 A CN109616412 A CN 109616412A
- Authority
- CN
- China
- Prior art keywords
- polishing
- hole
- chip
- disk
- polishing pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 267
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000003672 processing method Methods 0.000 title claims abstract description 13
- 239000012530 fluid Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims description 37
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 18
- 239000006061 abrasive grain Substances 0.000 claims description 17
- 238000007517 polishing process Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 12
- 239000007800 oxidant agent Substances 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 230000007246 mechanism Effects 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000035699 permeability Effects 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 2
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical group [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 2
- 235000019394 potassium persulphate Nutrition 0.000 claims description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims 2
- IWZKICVEHNUQTL-UHFFFAOYSA-M potassium hydrogen phthalate Chemical compound [K+].OC(=O)C1=CC=CC=C1C([O-])=O IWZKICVEHNUQTL-UHFFFAOYSA-M 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 28
- 238000013461 design Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 51
- 230000000694 effects Effects 0.000 description 23
- 239000007921 spray Substances 0.000 description 10
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 230000003746 surface roughness Effects 0.000 description 8
- 229910003460 diamond Inorganic materials 0.000 description 7
- 239000010432 diamond Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000012188 paraffin wax Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000002178 crystalline material Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000478345 Afer Species 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003902 lesion Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920006306 polyurethane fiber Polymers 0.000 description 1
- HDMGAZBPFLDBCX-UHFFFAOYSA-M potassium;sulfooxy sulfate Chemical compound [K+].OS(=O)(=O)OOS([O-])(=O)=O HDMGAZBPFLDBCX-UHFFFAOYSA-M 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a kind of semiconductor wafer photochemistry to mechanically polish processing method, chip is fixed on rubbing head, polishing pad is pasted onto polishing pan bottom and is machined with through-hole with polishing disk corresponding position, and the ultraviolet light that ultraviolet source issues can be irradiated to wafer surface through through-hole；Polishing fluid enters the contact zone of chip and polishing pad by through-hole.Photochemistry that the present invention designs mechanical polishing processing unit (plant) can preferably realize processing method involved in the present invention, and processing unit (plant) has easy to operate, realize and be easy, technological parameter can flexible modulation the advantages of.
Description
Technical field
The present invention relates to polishing technical field, the photochemistry of more specifically a kind of semiconductor wafer is mechanically polished
Processing method.
Background technique
There is thermal conductivity by the third generation semiconductor crystalline material of representative of gallium nitride (GaN), silicon carbide (SiC) and diamond
The excellent performances such as rate is good, breakdown electric field is high, electron saturation velocities are big, with second generation semiconductor material (such as: GaAs) phase
Than more suitable for being used as high temperature, high frequency, high-power component.
When using the semiconductor transistor elements such as GaN, SiC manufacture device, it is desirable that the necessary surface quality with higher of wafer, packet
Include: otherwise ultra-smooth surface will affect device without any scratch, micro-crack and residual stress, and without surface/sub-surface damage
The final performance of part.However, the chemical bond energy of GaN, SiC semiconductor crystalline material is big, chemical property extremely inertia, at normal temperature
It is hardly chemically reacted with any acid-base reagent, belongs to typical hard crisp unmanageable semiconductor crystalline material.Therefore, mesh
It is preceding process these wafers main method be: use superhard diamond abrasive grain to be ground it first, grind with acquisition compared with
Good surface smoothness, then use traditional chemical Mechanical Polishing Technique (chemical mechanical polishing
(CMP)) polishing.Since diamond abrasive grain hardness is big, surface/sub-surface damage inevitably is caused to chip.Though
So, Hideo Aida et al. (Applied Surface Science 292 (2014) 531-536) discovery reduces GaN grinding and adds
Diamond partial size in work can reduce the lesion depths of GaN wafer, such as: using the diamond abrasive grain of 500nm and 50nm partial size,
0.26 μm can be down to from 1.6 μm to table caused by GaN wafer/sub-surface damage depth, still, in order to completely remove diamond
Table/sub-surface damage caused by attrition process, it is subsequent to use softer SiO2Abrasive grain carries out CMP processing.Although soft
SiO2Abrasive grain will not introduce surface/sub-surface damage to chip during CMP, but extremely inert to these chemical property
Semiconductor material, though can remove surface/sub-surface damage using traditional CMP processing, processing efficiency is extremely low, and process time is logical
It is often up to 35 to 135 hours, this makes a series of problems, such as high there are cost using traditional CMP method.
Summary of the invention
The present invention for background above technical problem proposition and researching and designing goes out the photochemistry machine of semiconductor wafer a kind of
Tool polishing processing method simultaneously designs a set of processing unit (plant) for this method, photochemistry mechanical polishing method of the present invention,
Refer on existing chemically mechanical polishing basis, introducing ultraviolet light, which directly irradiates, is polished semiconductor workpiece, semiconductor work
Part generates a kind of processing method that removal is finished mechanically after photochemical modification under the auxiliary of ultraviolet light.
The technical scheme is that a kind of method of semiconductor wafer photochemistry mechanical polishing, using with through-hole
Polishing disk drives the polishing pad with through-hole, mechanically polishes to semiconductor wafer；UV light permeability polishes in polishing process
The through-hole of disk and polishing pad irradiates the chip, and chemical polishing solution is dripped through the through-hole of polishing disk and polishing pad in chip table
Face；It include abrasive grain and oxidant in the chemical polishing solution.
It the described method comprises the following steps as a preferred technical solution:
(1), by the fixed rubbing head of chip, through driving, chip is with rubbing head axial-rotation；
(2) polishing pad is fixed on polishing disk, through driving, polishing pad and wafer surface contact, and generate relative motion；
(3) in polishing process, the through-hole of UV light permeability polishing disk and polishing pad irradiates the chip；Polishing fluid is polished
The contact zone of the through-hole of disk and polishing pad dipping chip and polishing pad.
The layout of through-hole of through-hole and polishing pad of the polishing disk is consistent as a preferred technical solution,.
The area ratio of the photochemistry of the method and mechanism is 1:12~1:1 as a preferred technical solution,.
The area ratio of photochemistry and mechanism of the present invention refers to: according to the through-hole diameter of polishing pad and polishing disk
And quantity, the via area with contact wafers is calculated, i.e., the area exposed in wafer surface by through-hole is (by ultraviolet light part
Wafer surface occur photochemical oxidation effect) with polished pad remaining in wafer surface covering area (thrown the part
Light pad carries out mechanical polishing effect) ratio be denoted as the area ratio of photochemistry and mechanism.
The polishing disk and polishing pad are located at the top of semiconductor wafer, ultraviolet source position as a preferred technical solution,
In the top of polishing disk and polishing pad.
It as a preferred technical solution, include oxidant in the polishing fluid, the oxidant is potassium peroxydisulfate, over cure
Sour sodium, potassium hydrogen persulfate, hydrogen persulfate sodium；It is preferred that the oxidant concentration is 0.05-0.2mol/L.
It as a preferred technical solution, include abrasive grain, the preferred cerium oxide of abrasive grain, silica in the polishing fluid；It is preferred that institute
The partial size for stating abrasive grain is 6nm-100nm；It is preferred that the concentration of the abrasive grain is 0.05-10wt%.
The supply flow rate of the polishing fluid is 50mL/min~100mL/min as a preferred technical solution,.
The wafer rotation 100-250rpm, polishing disk rotating speed 60-150rpm as a preferred technical solution, polishing pressure
Power 4-6.5psi, 50~175mWcm of ultraviolet light intensity-2；It is preferred that the revolving speed 250rpm of chip, polishing disk rotating speed 150rpm, polishing
Pressure 6.5psi, ultraviolet light intensity 175mWcm-2, polish the preferred 1-2h of duration.
The semiconductor wafer is gallium nitride wafer as a preferred technical solution,.
The ultraviolet source is low pressure mercury lamp, high-pressure sodium lamp, LED mercury lamp, deuterium lamp, xenon lamp as a preferred technical solution,
One or more of, ultraviolet source wavelength < 400nm.
Correspondingly, in order to realize that above-mentioned photochemistry mechanically polishes processing method, another aspect of the present invention, researching and designing goes out
Photochemistry mechanically polishes processing unit (plant).Chip is fixed on rubbing head, polishing pad be pasted onto polishing pan bottom and with polishing disk pair
Position is answered to be machined with through-hole, the ultraviolet light that ultraviolet source issues can be irradiated to wafer surface through through-hole；Polishing fluid passes through logical
Hole enters the contact zone of chip and polishing pad.The photochemistry mechanical polishing processing unit (plant) that the present invention designs can preferably realize this hair
Processing method involved in bright, processing unit (plant) have it is easy to operate, realize be easy, technological parameter can flexible modulation the advantages of.
Semiconductor wafer photochemistry mechanical polishing apparatus, including the polishing pad with through-hole；Polishing disk with through-hole is used
Wafer surface is mechanically polished in drive polishing pad；
Polishing fluid source, for supplying polishing fluid, polishing fluid is dripped through the through-hole of polishing disk and polishing pad in wafer surface；With
Ultraviolet source, for supplying ultraviolet light, the through-hole emissive wafer of UV light permeability polishing disk and polishing pad.
The polishing fluid preferred chemical polishing solution preferably includes abrasive grain and oxidant in chemical polishing solution.
The polishing disk and polishing pad are located at the top of chip as a preferred technical solution, and ultraviolet source is located at polishing
The top of disk and polishing pad.
The polishing fluid source is polishing fluid spray head as a preferred technical solution, and polishing fluid spray head is located at the polishing disk
Top.
The through-hole of the polishing disk is in the radial layout from center outside week.It is preferred that through-hole is radially in polishing disk
Periodic distribution；It is preferred that the central part of polishing disk does not set through-hole, only set in the peripheral part of polishing disk and the position of contact wafers
Through-hole.
Through-hole only is processed on a circle annulus of polishing pad and wafer contact areas as a preferred technical solution, preferably
The annular width is size of wafer diameter.
Distribution of the through-hole on polishing pad can be from polishing pad center of circle shape point radially outward as a preferred technical solution,
Cloth on the circumference of different-diameter, can not also according to it is radial but on the circumference of different-diameter certain amount uniformly point
Cloth.
The layout of through-hole of through-hole and polishing pad of the polishing disk is consistent as a preferred technical solution,.
The polishing pad is polyurethane polishing pad, non-woven fabrics polishing pad, flannelette polishing pad as a preferred technical solution,
One of.
The area of the polishing pad is greater than the area of chip as a preferred technical solution,.
Described device further includes polishing fluid collecting tank, the rubbing head and polishing disk setting as a preferred technical solution,
In in polishing fluid collecting tank.
The area ratio of the photochemistry of described device and mechanism is 1:12~1:1 as a preferred technical solution,.
The radius of the polishing pad is greater than the diameter of chip as a preferred technical solution,.
The radius of the polishing disk is greater than the diameter of chip as a preferred technical solution,.
The through-hole of the polishing pad is set to the position with contact wafers as a preferred technical solution,.
Compared with prior art: photochemistry mechanical polishing method and its burnishing device of the present invention have following excellent
Point:
(1) polishing removal efficiency is high
Present invention employs ultraviolet lights in such a way that through-hole is irradiated to wafer surface, in conjunction with suitable oxidant, efficiently
Ground oxidation modification chip, then oxidation modification layer is removed mechanically by polishing pad and abrasive grain, in process, chip and polishing
Each spinning of disk generates relative motion, while the feeding of ultraviolet irradiation and polishing fluid is so that photochemical modification effect and machinery
Polishing action alternately, can carry out photochemistry machining to chip.Photochemical modification effect replaces with mechanical polishing effect
Carry out, this method using photochemical modification with mechanically polish and combined by the way of, it is fast to obtain polish removal rate, polishing
The low advantage of chip roughness afterwards.Removal rate in entire polishing process can significantly improve.
(2) photochemical modification effect and mechanical polishing effect ratio are adjustable
Polishing disk and the arrangement of through-hole diameter and through-hole on polishing disk on the polishing pad of bottom can be according to techniques
It is required that layout is optimized, so that photochemical modification effect and mechanical polishing of the chip in photochemistry mechanical polishing process
Effect ratio (i.e. the area ratio of photochemistry and mechanism) can arbitrarily adjust optimization.
(3) processing unit (plant) is simple, and processing method, which is realized, to be easy
Machined parameters in this processing unit (plant) are such as: polish pressure, wafer rotation, polishing pad revolving speed, solution type and concentration,
Ultraviolet source intensity can be adjusted according to actual workpiece type to reach preferable processing effect.
(4) effective processing effect is obtained, removal rate more higher than traditional CMP is obtained.
Detailed description of the invention
In Fig. 1, (a) is photochemistry mechanical polishing schematic diagram of the present invention；
In Fig. 1, (b) be polishing pad Yu chip relative motion schematic diagram；
Fig. 2 is polishing disk structural schematic diagram；
Fig. 3 is photochemistry mechanical polishing apparatus schematic diagram of the present invention；
Fig. 4 is photochemistry mechanical polishing processing unit (plant) top view of the present invention；
Fig. 5 is photochemistry mechanical polishing processing unit (plant) axonometric drawing of the present invention.
Fig. 6 is GaN wafer surface primary morphology, and surface roughness value Ra is 1.2nm.
Fig. 7 is the GaN wafer surface topography map under 7 processing conditions of embodiment, after photochemistry mechanical polishing processing, chip table
Surface roughness value Ra is 0.21nm；
Fig. 8 is under 7 processing conditions of embodiment, and after photochemistry mechanical polishing processing, there are part crystal whisker-shapeds on GaN wafer surface
Protrusion closes ultraviolet source, continues to use the surface topography map after the device carries out chip polishing 1.5 hours, chip
Surface roughness value Ra is 0.1nm；
In figure: polishing liquid bath 1, polishing pad 2, polishing disk 3, through-hole 4, polishing fluid spray head 5, ultraviolet source 6, chip 7, polishing
First 8, F is polish pressure, ± wpFor polishing disk velocity of rotation, ± wwFor rubbing head velocity of rotation；Levelling bolt 9, right angle fixed plate
I 10, pinboard I 11, L shape support plate 12a (12b), ring flange 13, bearing with spherical outside surface 14, right angle motor 15, electric machine support I
16, yielding coupling I 17, crossed roller bearing 18a (18b), Step Shaft I 19, Step Shaft II 20, yielding coupling II
21, electric machine support II 22, motor 23, pinboard II 24, mould group panel 25, spring 26, guide rail 27, sliding block 28, mould group bottom plate
29, it stands supporting plate 30a (30b), bracket fixing plate II 31, bottom plate 32.
Specific embodiment
Photochemistry mechanical polishing method, comprising the following steps:
(1), by the fixed rubbing head of chip, through driving, chip is with rubbing head axial-rotation；
(2) polishing pad is fixed on polishing disk, through driving, polishing pad and wafer surface contact, and generate relative motion；
(3) through-hole is machined on polishing disk, and polishing pad (being preferably pasted onto polishing pan bottom) is also accordingly machined with through-hole；
In polishing process, polishing process middle-ultraviolet lamp is located above polishing disk, and ultraviolet light can pass through polishing disk and the through-hole of polishing pad is straight
It connects and is radiated at the wafer surface；The through-hole of the polished disk of polishing fluid and polishing pad impregnates wafer surface.The semiconductor wafer
Preferably gallium nitride wafer
Photochemistry mechanical polishing method of the present invention refers on existing chemically mechanical polishing basis, ultraviolet
Line can directly be irradiated by the through-hole on polishing disk and be polished semiconductor workpiece, and workpiece issues the third contact of a total solar or lunar eclipse in ultraviolet irradiation
It learns and is modified, and then modified layer polished pad mechanically polishes a kind of processing method of removal.
Photochemistry mechanical polishing method device includes: rubbing head, is used for fixed wafer；Polishing disk is located at the rubbing head
Top, for being in contact and pressurizeing with wafer surface；The polishing disk is equipped with through-hole；
Polishing fluid spray head is located above the polishing disk, is used for jet polishing liquid；The polishing fluid of supply can pass through through-hole
Enter polishing area；First driving driving section, connects polishing disk, for driving polishing disk dead axle to turn round；Second driving transmission
Portion connects rubbing head, for driving rubbing head and then driving the revolution of chip dead axle；Ultraviolet source, positioned at the top of polishing disk, phase
It is located above chip with answering, the ultraviolet light of sending can be irradiated downwards by the through-hole of the polishing disk to wafer surface；Support
Portion is used to support and fixes first driving driving section, the second driving driving section, rubbing head, polishing disk, polishing fluid spray head.
The one side of polishing disk and wafer surface contact is equipped with polishing pad, and the polishing pad is equipped with through-hole, the preferably described polishing
Pad is pasted on polishing pan bottom, and is accordingly machined with through-hole with polishing disk.
Through-hole is all machined on the polishing pad that polishing disk and bottom are pasted, chip during processing, is located at polishing disk
The ultraviolet light of top can reach wafer surface by through-hole during the polishing process, carry out photochemical oxidation effect to chip, make
It obtains and is modified by the workpiece of ultraviolet light irradiation part.
Polishing disk is sequentially connected Step Shaft, and yielding coupling is connect with driving motor, and driving motor can drive buff spindle
It is turned round around dead axle.
Polish pressure can be loaded by polishing disk in polishing process.
Described device further includes rubbing head, and the chip is bonded on rubbing head by (heating) paraffin.Rubbing head can
Drive afer rotates.
Rubbing head is mounted on Step Shaft by screw, and Step Shaft passes through bearing with spherical outside surface and connect with yielding coupling, bullet
The property shaft coupling other end is driving motor, and driving motor can drive rubbing head to rotate.
It can produce relative velocity both when polishing pad and chip respectively turn round.
A shallow slot close with wafer diameter is machined on the rubbing head as a preferred technical solution, to chip
It plays the role of positioning.
Described device further includes linear mould group I, and linear mould group I includes bottom plate I, slidable panels I and guide rail I, and guide rail I is fixed
On bottom plate I, slidable panels I does linear slide along guide rail I in the vertical direction；The polishing disk and the first driving driving section peace
On slidable panels I.
Preferably, device further includes linear mould group, linear mould group includes mould group panel, guide rail, guide rail slide block, mould group bottom
Plate, guide rail are fixed on mould group bottom plate, and sliding block is fixed with mould group panel, can on guide rail linear slide.Motor and pinboard with
And the self weight of linear mould group part can be used as the tonnage source of photochemistry mechanical polishing.
Further, it is equipped with spring between mould group panel and mould group bottom plate, the spring of the different stiffness factors of replacement can be passed through
Carry out the tonnage in quantitative adjusting polishing process, when the self weight of entire part is all unsatisfactory for polish pressure, can additionally increase
Counterweight realizes the load of larger polish pressure.
Preferably, the position of polishing disk and through-hole on polishing pad can be optimized with size；
When polishing, chip and polishing pad are driven by it motor driven respectively, and the two generates relative motion, polishing disk and
The self weight of its driving device provides tonnage, and ultraviolet light can be irradiated to wafer surface by through-hole, and photochemistry mechanical polishing adds
In work, photochemical modification effect constantly alternately carries out polishing to chip with mechanical polishing effect.
The polish pressure is loaded by polishing disk.
A shallow slot close with wafer diameter is machined on the rubbing head.
Described device further includes linear mould group I, and linear mould group I includes bottom plate I, slidable panels I and guide rail I, and guide rail I is fixed
On bottom plate I, slidable panels I does linear slide along guide rail I in the vertical direction；The polishing disk and the first driving driving section peace
On slidable panels I.It is described in detail in the following with reference to the drawings and specific embodiments to for method and apparatus.
The photochemistry mechanical polishing method of 1 semiconductor wafer of embodiment
Method drives the polishing pad with through-hole using the polishing disk with through-hole, carries out mechanical throwing to semiconductor wafer
Light；The through-hole of UV light permeability polishing disk and polishing pad irradiates the chip, and the polished disk of polishing fluid and throwing in polishing process
The through-hole of light pad impregnates wafer surface, to realize the photochemistry mechanical polishing of semiconductor wafer.
(a), Fig. 1 (b) and Fig. 2 referring to Fig.1, polishing pad 2 are fixed on 3 bottom of polishing disk, and polishing pad 2 and polishing disk 3 all add
Work has through-hole 4；Chip 7 is fixed on rubbing head 8, with 8 rotary motion of rubbing head；The ultraviolet light that ultraviolet source 6 issues can be with
It is irradiated to 7 surface of chip by through-hole 4, while the polishing fluid that polishing fluid spray head 5 sprays can also enter chip 7 by through-hole 4
With the contact area of polishing pad 2.
The size and distributing position of through-hole on polishing pad and polishing disk can optimize, by changing through-hole
Size and location (area ratio for changing photochemistry and mechanism) can make in process, and chip is by ultraviolet light spoke
It is adjustable according to part and mechanical polishing area ratio.As shown in Fig. 2, on different-diameter concentric circles on polishing disk, uniformly
Ground is dispersed with through-hole, concentric radius of circle (D corresponding to each ring through hole1Or Dn) can optimize, each ring through hole institute
Concentric circles between distance can also be with optimization design, while the diameter (d of each through-hole1), the number of through-hole is equal
It can optimize.
The process of polishing processing method is as follows: polishing pad 2 is pasted onto 3 bottom of polishing disk, and rotation, chip 7 is driven by motor
It is adhesively fixed by the paraffin of heating and melting onto rubbing head 8, rotation, the rotation of polishing pad 2 is driven by motor with rubbing head 8
Turn the rotation with chip 7 and generates relative motion.The ultraviolet light issued by the through-hole on polishing disk 3, ultraviolet source 6, is irradiated to
7 surface of chip, the polishing that polishing fluid spray head 5 sprays enter chip 7 and 2 contact zone of polishing pad, and ultraviolet light irradiation can produce chip 7
The effect of third contact of a total solar or lunar eclipse chemical modification.Polish pressure F can be loaded into chip and polishing pad contact zone by polishing disk 3.After on-load pressure,
The relative motion of chip 7 and polishing pad 2 can carry out mechanical polishing effect, photochemical effect and mechanical polishing effect to chip 7
Alternately can to chip 7 carry out photochemistry mechanical polishing processing.
The photochemistry mechanical polishing apparatus of 2 semiconductor wafer of embodiment
As shown in Fig. 1 (a), Fig. 1 (b) and Fig. 2, polishing pad 2 is pasted onto 3 bottom of polishing disk, and polishing disk 3 and polishing pad 2 are equal
It is machined with a certain number of through-holes (through-hole of polishing disk 3 is illustrated by Fig. 4 top view).Ultraviolet source 6 is located on polishing disk 3
Side, the ultraviolet light of sending can be irradiated to the chip 7 of bottom by through-hole, polishing fluid can also be reached through through-hole chip 7 with
The contact zone of polishing pad 2.Polishing liquid bath 1 is schematically shown, and polishing liquid bath accommodates polishing fluid waste liquid.
As shown in figure 3, four levelling bolts 9 support bottom plate 32, right angle fixed plate I 10 is mounted on bottom plate by screw
On 32, rubbing head 8 and its driving running part are supported.Pinboard I 11 is fixed by screws on right angle support plate I 10, electricity
Machine support I 16 is mounted on pinboard I 11 by screw, and right angle motor 15 is mounted on electric machine support I 16.L shape support plate
12a is fixed by screws on pinboard I 11, and the outer ring of crossed roller bearing 18a is fixed by screws in L shape support plate 12a
On, ring flange 13 is mounted on the inner ring of crossed roller bearing 18a by screw, and bearing with spherical outside surface 14 is fixed by screws in method
On blue disk 13, a shaft shoulder of Step Shaft I 19 is withstood on the bearing inner race of bearing with spherical outside surface 14, and rubbing head 8 is installed by screw
On Step Shaft I 19, chip 7 is bonded on rubbing head 8 by the paraffin heated.Bearing with spherical outside surface 14 can carry a certain amount of
Axial load, and there is aligning effect appropriate, when chip 7 and polishing pad 2 can be allowed to contact, due to installation error or chip 7
When smaller with face type error existing for rubbing head 8, by bearing with spherical outside surface 14, suitably aligning effect makes chip 7 and polishing pad
2 can preferably be bonded contact in parallel.
19 shaft shoulder of Step Shaft I is withstood on the bearing inner race of bearing with spherical outside surface 14, and sequentially passing through ring flange 13, (diameter of axle is less than
Ring flange aperture), (diameter of axle is less than L shape branch by crossed roller bearing 18a (diameter of axle is less than bearing inner race aperture) and L shape support plate 12a
Fagging aperture) by the motor axis connection of yielding coupling and right angle motor 15, Step Shaft I 19 play transmitting driving torque with
Support the effect of rubbing head 8.
As shown in Figure 4 and Figure 5, polishing disk 3 is fixed on Step Shaft II 20, and the shaft shoulder of Step Shaft II 20 withstands on intersection rolling
On the inner ring of sub- bearing 18b, Step Shaft II 20 passes through L shape support plate 12b and connect with yielding coupling 21, yielding coupling 21
The other end connection motor 23 motor shaft.Motor 23 is mounted on electric machine support 22, and electric machine support 22 is fixed by screws in
On pinboard II 24, pinboard II 24 is mounted on mould group panel 25 by screw, and mould group panel 25 and multiple sliding blocks 28 connect
It connects, sliding block 28 can move along a straight line on guide rail 27, and guide rail 27 is mounted on mould group bottom plate 29.Mould group panel 25 and mould group bottom plate 29
Between be serially connected with a spring 26.Polishing pad 2, polishing disk 3, Step Shaft II 20, crossed roller bearing 18b, yielding coupling II
21, electric machine support II 22, motor 23, pinboard II 24, mould group panel 25, spring 26, the self weight of these parts of sliding block 28 can be with
Polish pressure source when as polishing can pass through the stiffness system of change spring 26 if necessary to change polish pressure
Number is to realize.Mould group bottom plate 29 is fixed on vertical supporting plate 30a, and vertical supporting plate 30a is fixed on vertical supporting plate 30b, and vertical supporting plate 30b passes through
Screw is fixed in right angle support plate 31, and right angle support plate 31 is fixed on bottom plate 32.
Embodiment 3- embodiment 10
Technical effect of the invention is illustrated with specific embodiment below with reference to table 1.
S is denoted as using chip area in the embodiment of table 1w, polished when chip is contacted with polishing pad in process
Through-hole is machined on pad, due to the through-hole diameter size (d on polishing pad1), quantity can be adjusted.Embodiment 3- is real
The GaN wafer used in example 10 is applied as the GaN self-supporting chip grown by HVPE method, chip pattern is using atomic force microscopy
Mirror (Atomic force microscopy (AFM)) measures, and the initial pattern of chip is as shown in Figure 6.In Fig. 6, self-supporting
GaN wafer is after the grinding of diamond abrasive grain, and surface roughness Ra 1.2nm is brilliant although surface roughness value is lower
There are a large amount of scratches on piece surface, while cannot function as device there is also a large amount of damage in chip sub-surface and directly using, needing
Scratch and sub-surface damage are removed.
Chip removal rate weighs the quality of processing front and back using precision balance, calculates the ropy mode in processing front and back and carries out
Conversion.Before weighing, successively use acetone, alcohol, deionized water cleans GaN wafer, remove in wafer surface the dust that adheres to or
Error caused by the burs such as paraffin weigh wafer quality.
(1) GaN wafer paraffin is bonded on rubbing head, rubbing head is mounted on Step Shaft；Polishing pad is polyurethane
Fiber polishing pad (SUBA 800).
(2) ultraviolet source is located at right above polishing disk, and after opening light source, the ultraviolet light that ultraviolet source issues can be penetrated
The through-hole of polishing disk and polishing pad is irradiated to wafer surface；
(3) polishing fluid is sent into chip and polishing pad contact zone by through-hole by polishing fluid spray head, and polishing fluid supply flow rate is
80mL/min, the specific ingredient of polishing fluid are as shown in table 1；
(4) GaN wafer revolving speed 250rpm, polishing disk rotating speed 150rpm, polish pressure 6.5psi, ultraviolet light intensity 175mW
cm-2, polish duration 1h.
(5) heating and melting paraffin removes chip and successively uses acetone, alcohol, with being dried with nitrogen crystalline substance after deionized water cleaning
Piece weighs quality, the surface roughness after measurement polishing.
1. embodiment condition of table and polishing effect
Chip after the processing of Example 7, measures its surface quality, measurement result is as shown in Figure 7.Fig. 7 is shown
Chip pattern after photochemistry mechanical polishing processing, compares the pattern (Fig. 6) of raw wafers, it is possible to find table after chip is processed
Face improves obviously, and surface roughness value is reduced to 0.21nm from 1.2nm, but photochemistry mechanically polishes the chip after processing, by
In wafer material itself there are dislocation defects, dislocation defects lead to effective hole at this as photo-generate electron-hole complex centre
Quantity is lower than the effective number of cavities of surrounding, so removal rate is slower than adjacent material, therefore chip table after processing at dislocation defects
Face has crystal whisker-shaped raised.For this situation, after processing is completed, ultraviolet light is closed, be about 1.5 hours without purple carrying out duration
Outside line polishing, test wafer topography is as shown in figure 8, the largely disappearance, and surface roughness value of discovery crystal whisker-shaped protrusion
It is further reduced to 0.1nm, and wafer surface is more smooth, in original wafer surface shape characteristic: scratch and some convex
The pattern risen disappears.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Anyone skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of processing method of semiconductor wafer photochemistry mechanical polishing, which is characterized in that using the polishing disk with through-hole
The polishing pad with through-hole is driven, semiconductor wafer is mechanically polished；UV light permeability polishing disk and throwing in polishing process
The through-hole of light pad irradiates the chip, and chemical polishing solution is dripped through the through-hole of polishing disk and polishing pad in wafer surface；It is described
It include abrasive grain and oxidant in chemical polishing solution.
2. the method according to claim 1, wherein the following steps are included:
(1), by the fixed rubbing head of chip, through driving, chip is with rubbing head axial-rotation；
(2) polishing pad is fixed on polishing disk, through driving, polishing pad and wafer surface contact, and generate relative motion；
(3) in polishing process, the through-hole of UV light permeability polishing disk and polishing pad irradiates the chip；The polished disk of polishing fluid and
The contact zone of through-hole the dipping chip and polishing pad of polishing pad.
3. the method according to claim 1, wherein the layout of the through-hole of the through-hole and polishing pad of the polishing disk
Unanimously.
4. the method according to claim 1, wherein the photochemistry of the method and the area ratio of mechanism are
1:12~1:1.
5. the method according to claim 1, wherein the polishing disk and polishing pad are located at the upper of semiconductor wafer
Side, ultraviolet source are located at the top of polishing disk and polishing pad.
6. the method according to claim 1, wherein the oxidant is potassium peroxydisulfate, sodium peroxydisulfate, over cure
Potassium hydrogen phthalate, hydrogen persulfate sodium；It is preferred that the oxidant concentration is 0.05-0.2mol/L.
7. the method according to claim 1, wherein the abrasive grain is cerium oxide or silica；It is preferred that described
The partial size of abrasive grain is 6nm-100nm；It is preferred that the concentration of the abrasive grain is 0.05-10wt%.
8. the method according to claim 1, wherein the supply flow rate of the polishing fluid be 50mL/min~
100mL/min。
9. the method according to claim 1, wherein the wafer rotation 100-250rpm, polishing disk rotating speed 60-
150rpm, polish pressure 4-6.5psi, 50~175mWcm of ultraviolet light intensity-2。
10. the method according to claim 1, wherein the semiconductor wafer is gallium nitride wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811535751.8A CN109616412A (en) | 2018-12-14 | 2018-12-14 | A kind of semiconductor wafer processing method that photochemistry is combined with mechanical polishing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811535751.8A CN109616412A (en) | 2018-12-14 | 2018-12-14 | A kind of semiconductor wafer processing method that photochemistry is combined with mechanical polishing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109616412A true CN109616412A (en) | 2019-04-12 |
Family
ID=66010064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811535751.8A Pending CN109616412A (en) | 2018-12-14 | 2018-12-14 | A kind of semiconductor wafer processing method that photochemistry is combined with mechanical polishing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109616412A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110197789A (en) * | 2019-05-31 | 2019-09-03 | 西安理工大学 | The ultrasonic wave added electrochemical mechanical polishing processing unit (plant) and method of SiC single crystal piece |
Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0215625A (en) * | 1988-07-04 | 1990-01-19 | Mitsubishi Electric Corp | Microscopic processing for hard carbon film |
| JPH09277160A (en) * | 1996-02-15 | 1997-10-28 | Tadahiro Omi | Chemical machinery polishing device and method thereof |
| US20020104269A1 (en) * | 2001-01-26 | 2002-08-08 | Applied Materials, Inc. | Photochemically enhanced chemical polish |
| US20030139122A1 (en) * | 2002-01-24 | 2003-07-24 | Lawing Andrew Scott | Polishing pad for a chemical mechanical planarization or polishing (CMP) system |
| WO2006042010A1 (en) * | 2004-10-06 | 2006-04-20 | Rajeev Bajaj | Method and apparatus for improved chemical mechanical planarization |
| WO2007091439A1 (en) * | 2006-02-06 | 2007-08-16 | Toray Industries, Inc. | Abrasive pad and abrasion device |
| CN101301735A (en) * | 2008-07-03 | 2008-11-12 | 大连理工大学 | Ultraprecise and low-damage method for polishing large size diamond wafer and device thereof |
| WO2011074691A1 (en) * | 2009-12-15 | 2011-06-23 | Osaka University | Polishing method, polishing apparatus and polishing tool |
| JP2012240153A (en) * | 2011-05-19 | 2012-12-10 | Crystal Kogaku:Kk | Polishing device |
| CN102990503A (en) * | 2012-11-09 | 2013-03-27 | 中国电子科技集团公司第四十六研究所 | Polishing method applied to CdS wafer |
| CN104085195A (en) * | 2013-09-27 | 2014-10-08 | 大连理工大学 | Liquid ejection head manufacturing method, liquid ejection head and printing device |
| CN105563341A (en) * | 2016-02-25 | 2016-05-11 | 清华大学 | Ultraviolet catalyst method for CMP polishing liquid |
| CN106141900A (en) * | 2015-04-16 | 2016-11-23 | 东莞市中镓半导体科技有限公司 | A kind of method of high efficiency grinding and polishing GaN wafer |
| CN106189872A (en) * | 2016-07-13 | 2016-12-07 | 清华大学 | A kind of polishing composition and preparation, finishing method |
| CN107641835A (en) * | 2017-10-23 | 2018-01-30 | 大连理工大学 | A kind of method of semiconductor wafer optical electro-chemistry mechanical polishing |
| CN107652900A (en) * | 2017-10-23 | 2018-02-02 | 大连理工大学 | A kind of gallium nitride wafer optical electro-chemistry machine polishing liquor and polishing method |
| CN107877352A (en) * | 2017-10-23 | 2018-04-06 | 大连理工大学 | Semiconductor wafer optical electro-chemistry mechanical polishing apparatus |
-
2018
- 2018-12-14 CN CN201811535751.8A patent/CN109616412A/en active Pending
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0215625A (en) * | 1988-07-04 | 1990-01-19 | Mitsubishi Electric Corp | Microscopic processing for hard carbon film |
| JPH09277160A (en) * | 1996-02-15 | 1997-10-28 | Tadahiro Omi | Chemical machinery polishing device and method thereof |
| US20020104269A1 (en) * | 2001-01-26 | 2002-08-08 | Applied Materials, Inc. | Photochemically enhanced chemical polish |
| US20030139122A1 (en) * | 2002-01-24 | 2003-07-24 | Lawing Andrew Scott | Polishing pad for a chemical mechanical planarization or polishing (CMP) system |
| WO2006042010A1 (en) * | 2004-10-06 | 2006-04-20 | Rajeev Bajaj | Method and apparatus for improved chemical mechanical planarization |
| WO2007091439A1 (en) * | 2006-02-06 | 2007-08-16 | Toray Industries, Inc. | Abrasive pad and abrasion device |
| CN101301735A (en) * | 2008-07-03 | 2008-11-12 | 大连理工大学 | Ultraprecise and low-damage method for polishing large size diamond wafer and device thereof |
| WO2011074691A1 (en) * | 2009-12-15 | 2011-06-23 | Osaka University | Polishing method, polishing apparatus and polishing tool |
| JP2012240153A (en) * | 2011-05-19 | 2012-12-10 | Crystal Kogaku:Kk | Polishing device |
| CN102990503A (en) * | 2012-11-09 | 2013-03-27 | 中国电子科技集团公司第四十六研究所 | Polishing method applied to CdS wafer |
| CN104085195A (en) * | 2013-09-27 | 2014-10-08 | 大连理工大学 | Liquid ejection head manufacturing method, liquid ejection head and printing device |
| CN106141900A (en) * | 2015-04-16 | 2016-11-23 | 东莞市中镓半导体科技有限公司 | A kind of method of high efficiency grinding and polishing GaN wafer |
| CN105563341A (en) * | 2016-02-25 | 2016-05-11 | 清华大学 | Ultraviolet catalyst method for CMP polishing liquid |
| CN106189872A (en) * | 2016-07-13 | 2016-12-07 | 清华大学 | A kind of polishing composition and preparation, finishing method |
| CN107641835A (en) * | 2017-10-23 | 2018-01-30 | 大连理工大学 | A kind of method of semiconductor wafer optical electro-chemistry mechanical polishing |
| CN107652900A (en) * | 2017-10-23 | 2018-02-02 | 大连理工大学 | A kind of gallium nitride wafer optical electro-chemistry machine polishing liquor and polishing method |
| CN107877352A (en) * | 2017-10-23 | 2018-04-06 | 大连理工大学 | Semiconductor wafer optical electro-chemistry mechanical polishing apparatus |
Non-Patent Citations (1)
| Title |
|---|
| 熊朋等: "氮化镓晶片的CMP技术现状与趋势", 《电子工业专用设备》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110197789A (en) * | 2019-05-31 | 2019-09-03 | 西安理工大学 | The ultrasonic wave added electrochemical mechanical polishing processing unit (plant) and method of SiC single crystal piece |
| CN110197789B (en) * | 2019-05-31 | 2021-04-06 | 西安理工大学 | Ultrasonic-assisted electrochemical mechanical polishing device and method for SiC single crystal wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109648463A (en) | A kind of semiconductor wafer optical electro-chemistry mechanical polishing processing method | |
| CN109465739A (en) | A kind of semiconductor wafer optical electro-chemistry mechanical polishing processing unit (plant) | |
| CN101121247A (en) | Device for cleaning grinding head | |
| US8348720B1 (en) | Ultra-flat, high throughput wafer lapping process | |
| CN102554760A (en) | Multifunctional substrate polishing and burnishing device and polishing and burnishing method thereof | |
| CN109848840A (en) | A kind of semiconductor wafer processing device that photochemistry is combined with mechanical polishing | |
| CN100493846C (en) | Finishing controlled ultra-precise polisher | |
| KR20050108394A (en) | Wafer-retaining carrier, double side-grinding device using the same, and double side-grinding method for wafer | |
| CN108381376A (en) | A kind of processing unit (plant) of ultrasonic grinding sapphire eyeglass | |
| CN110871385A (en) | Double-side polishing machine and polishing method | |
| CN109616412A (en) | A kind of semiconductor wafer processing method that photochemistry is combined with mechanical polishing | |
| JP2011165994A (en) | Flattening processing device of semiconductor substrate | |
| CN201115929Y (en) | Dressing controllable type ultraprecise polishing machine | |
| CN1422728A (en) | Grinder and method for grinding workpiece | |
| CN114523340B (en) | Complete grinding and polishing equipment and grinding and polishing method | |
| CN114932500B (en) | Grinding and polishing integrated device and operation method thereof | |
| CN213438865U (en) | Peripheral surface polishing equipment for processing quartz ring | |
| JP7281226B2 (en) | Photoelectrochemical mechanical polishing processing apparatus and processing method for semiconductor wafer | |
| CN110116340A (en) | A kind of polishing process of cadmium zinc telluride crystal wafer | |
| CN204772029U (en) | Polycrystal piece grinder | |
| CN102729133A (en) | Wafer grinding device and wafer grinding method | |
| CN207415037U (en) | A kind of horizontal circumferential weld belt grinder | |
| US6506099B1 (en) | Driving a carrier head in a wafer polishing system | |
| KR100899637B1 (en) | Wafer doubleside polishing device | |
| KR101151000B1 (en) | Apparatus for polishing wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |