CN107872082B - 半导体集成电路 - Google Patents
半导体集成电路 Download PDFInfo
- Publication number
- CN107872082B CN107872082B CN201710891129.XA CN201710891129A CN107872082B CN 107872082 B CN107872082 B CN 107872082B CN 201710891129 A CN201710891129 A CN 201710891129A CN 107872082 B CN107872082 B CN 107872082B
- Authority
- CN
- China
- Prior art keywords
- circuit
- operation mode
- setting
- semiconductor integrated
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000009966 trimming Methods 0.000 claims abstract description 25
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims abstract description 19
- 238000001514 detection method Methods 0.000 description 95
- 238000007689 inspection Methods 0.000 description 26
- 238000000034 method Methods 0.000 description 9
- 238000012544 monitoring process Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000006870 function Effects 0.000 description 5
- 239000000523 sample Substances 0.000 description 4
- 238000007599 discharging Methods 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
-
- H02J7/0021—
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/32—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/023—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in clock generator or timing circuitry
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
- H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
-
- H02J7/0026—
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
- H02J7/0031—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using battery or load disconnect circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/037—Bistable circuits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016-190349 | 2016-09-28 | ||
JP2016190349A JP6390683B2 (ja) | 2016-09-28 | 2016-09-28 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107872082A CN107872082A (zh) | 2018-04-03 |
CN107872082B true CN107872082B (zh) | 2020-11-13 |
Family
ID=61686521
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710891129.XA Active CN107872082B (zh) | 2016-09-28 | 2017-09-27 | 半导体集成电路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10204687B2 (ja) |
JP (1) | JP6390683B2 (ja) |
KR (1) | KR101944739B1 (ja) |
CN (1) | CN107872082B (ja) |
TW (1) | TWI636461B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10297558B1 (en) * | 2017-12-12 | 2019-05-21 | Novatek Microelectronics Corp. | Trimming method, trimming circuity, and trimming system for integrated circuit with memory usage reduction |
US11036581B2 (en) * | 2019-08-08 | 2021-06-15 | Apple Inc. | Non-volatile memory control circuit with parallel error detection and correction |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1405889A (zh) * | 2001-09-18 | 2003-03-26 | 株式会社东芝 | 同步型半导体存储装置 |
JP2004110902A (ja) * | 2002-09-17 | 2004-04-08 | Fujitsu Ltd | パルス計数回路及び不揮発性半導体記憶装置 |
CN101039108A (zh) * | 2006-03-13 | 2007-09-19 | 株式会社瑞萨科技 | 延迟同步电路及半导体集成电路器件 |
CN102369668A (zh) * | 2009-03-30 | 2012-03-07 | 太阳诱电株式会社 | 半导体装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0563090A (ja) * | 1991-09-02 | 1993-03-12 | Seiko Instr Inc | ヒユーズトリミング回路の調整方法 |
JP2001210092A (ja) * | 2000-01-24 | 2001-08-03 | Nec Corp | 半導体記憶装置 |
US6882130B2 (en) * | 2001-04-17 | 2005-04-19 | Matsushita Electric Industrial Co., Ltd. | Battery-driven electronic device and mobile communication apparatus |
JP4256305B2 (ja) * | 2004-06-09 | 2009-04-22 | 株式会社東芝 | 半導体記憶装置 |
JP4098279B2 (ja) * | 2004-07-05 | 2008-06-11 | セイコーインスツル株式会社 | バッテリー保護回路 |
DE102005061719B3 (de) * | 2005-12-22 | 2007-05-16 | Infineon Technologies Ag | Speichervorrichtung mit Fuse-Speicherelementen |
JP2007265557A (ja) * | 2006-03-29 | 2007-10-11 | Toshiba Corp | 半導体記憶装置 |
JP4810499B2 (ja) * | 2007-05-18 | 2011-11-09 | 株式会社日立超エル・エス・アイ・システムズ | 半導体集積回路装置および二次電池監視用半導体集積回路装置 |
JP2010171369A (ja) * | 2008-12-22 | 2010-08-05 | Elpida Memory Inc | 半導体装置 |
JP5208011B2 (ja) * | 2009-02-13 | 2013-06-12 | セイコーインスツル株式会社 | メモリ回路装置 |
JP5133926B2 (ja) * | 2009-03-26 | 2013-01-30 | 株式会社日立製作所 | 車両用電池システム |
EP2485293A4 (en) * | 2009-09-28 | 2014-01-08 | Hitachi Vehicle Energy Ltd | BATTERY SYSTEM |
JP5888387B1 (ja) * | 2014-10-22 | 2016-03-22 | ミツミ電機株式会社 | 電池保護回路及び電池保護装置、並びに電池パック |
JP5900598B1 (ja) * | 2014-12-26 | 2016-04-06 | ミツミ電機株式会社 | 二次電池保護回路、二次電池保護装置及び電池パック、並びにデータ書き込み方法 |
-
2016
- 2016-09-28 JP JP2016190349A patent/JP6390683B2/ja active Active
-
2017
- 2017-08-01 KR KR1020170097692A patent/KR101944739B1/ko active IP Right Grant
- 2017-09-13 US US15/703,368 patent/US10204687B2/en active Active
- 2017-09-20 TW TW106132277A patent/TWI636461B/zh active
- 2017-09-27 CN CN201710891129.XA patent/CN107872082B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1405889A (zh) * | 2001-09-18 | 2003-03-26 | 株式会社东芝 | 同步型半导体存储装置 |
JP2004110902A (ja) * | 2002-09-17 | 2004-04-08 | Fujitsu Ltd | パルス計数回路及び不揮発性半導体記憶装置 |
CN101039108A (zh) * | 2006-03-13 | 2007-09-19 | 株式会社瑞萨科技 | 延迟同步电路及半导体集成电路器件 |
CN102369668A (zh) * | 2009-03-30 | 2012-03-07 | 太阳诱电株式会社 | 半导体装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20180035120A (ko) | 2018-04-05 |
CN107872082A (zh) | 2018-04-03 |
KR101944739B1 (ko) | 2019-02-01 |
TWI636461B (zh) | 2018-09-21 |
TW201814718A (zh) | 2018-04-16 |
JP6390683B2 (ja) | 2018-09-19 |
US10204687B2 (en) | 2019-02-12 |
US20180090214A1 (en) | 2018-03-29 |
JP2018056322A (ja) | 2018-04-05 |
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