CN107872082B - 半导体集成电路 - Google Patents

半导体集成电路 Download PDF

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Publication number
CN107872082B
CN107872082B CN201710891129.XA CN201710891129A CN107872082B CN 107872082 B CN107872082 B CN 107872082B CN 201710891129 A CN201710891129 A CN 201710891129A CN 107872082 B CN107872082 B CN 107872082B
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CN
China
Prior art keywords
circuit
operation mode
setting
semiconductor integrated
signal
Prior art date
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Active
Application number
CN201710891129.XA
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English (en)
Chinese (zh)
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CN107872082A (zh
Inventor
山口刚史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsumi Electric Co Ltd
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Mitsumi Electric Co Ltd
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Filing date
Publication date
Application filed by Mitsumi Electric Co Ltd filed Critical Mitsumi Electric Co Ltd
Publication of CN107872082A publication Critical patent/CN107872082A/zh
Application granted granted Critical
Publication of CN107872082B publication Critical patent/CN107872082B/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H02J7/0021—
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/023—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in clock generator or timing circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • H02J7/0026—
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/0031—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using battery or load disconnect circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/037—Bistable circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
CN201710891129.XA 2016-09-28 2017-09-27 半导体集成电路 Active CN107872082B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-190349 2016-09-28
JP2016190349A JP6390683B2 (ja) 2016-09-28 2016-09-28 半導体集積回路

Publications (2)

Publication Number Publication Date
CN107872082A CN107872082A (zh) 2018-04-03
CN107872082B true CN107872082B (zh) 2020-11-13

Family

ID=61686521

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710891129.XA Active CN107872082B (zh) 2016-09-28 2017-09-27 半导体集成电路

Country Status (5)

Country Link
US (1) US10204687B2 (ja)
JP (1) JP6390683B2 (ja)
KR (1) KR101944739B1 (ja)
CN (1) CN107872082B (ja)
TW (1) TWI636461B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10297558B1 (en) * 2017-12-12 2019-05-21 Novatek Microelectronics Corp. Trimming method, trimming circuity, and trimming system for integrated circuit with memory usage reduction
US11036581B2 (en) * 2019-08-08 2021-06-15 Apple Inc. Non-volatile memory control circuit with parallel error detection and correction

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1405889A (zh) * 2001-09-18 2003-03-26 株式会社东芝 同步型半导体存储装置
JP2004110902A (ja) * 2002-09-17 2004-04-08 Fujitsu Ltd パルス計数回路及び不揮発性半導体記憶装置
CN101039108A (zh) * 2006-03-13 2007-09-19 株式会社瑞萨科技 延迟同步电路及半导体集成电路器件
CN102369668A (zh) * 2009-03-30 2012-03-07 太阳诱电株式会社 半导体装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0563090A (ja) * 1991-09-02 1993-03-12 Seiko Instr Inc ヒユーズトリミング回路の調整方法
JP2001210092A (ja) * 2000-01-24 2001-08-03 Nec Corp 半導体記憶装置
US6882130B2 (en) * 2001-04-17 2005-04-19 Matsushita Electric Industrial Co., Ltd. Battery-driven electronic device and mobile communication apparatus
JP4256305B2 (ja) * 2004-06-09 2009-04-22 株式会社東芝 半導体記憶装置
JP4098279B2 (ja) * 2004-07-05 2008-06-11 セイコーインスツル株式会社 バッテリー保護回路
DE102005061719B3 (de) * 2005-12-22 2007-05-16 Infineon Technologies Ag Speichervorrichtung mit Fuse-Speicherelementen
JP2007265557A (ja) * 2006-03-29 2007-10-11 Toshiba Corp 半導体記憶装置
JP4810499B2 (ja) * 2007-05-18 2011-11-09 株式会社日立超エル・エス・アイ・システムズ 半導体集積回路装置および二次電池監視用半導体集積回路装置
JP2010171369A (ja) * 2008-12-22 2010-08-05 Elpida Memory Inc 半導体装置
JP5208011B2 (ja) * 2009-02-13 2013-06-12 セイコーインスツル株式会社 メモリ回路装置
JP5133926B2 (ja) * 2009-03-26 2013-01-30 株式会社日立製作所 車両用電池システム
EP2485293A4 (en) * 2009-09-28 2014-01-08 Hitachi Vehicle Energy Ltd BATTERY SYSTEM
JP5888387B1 (ja) * 2014-10-22 2016-03-22 ミツミ電機株式会社 電池保護回路及び電池保護装置、並びに電池パック
JP5900598B1 (ja) * 2014-12-26 2016-04-06 ミツミ電機株式会社 二次電池保護回路、二次電池保護装置及び電池パック、並びにデータ書き込み方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1405889A (zh) * 2001-09-18 2003-03-26 株式会社东芝 同步型半导体存储装置
JP2004110902A (ja) * 2002-09-17 2004-04-08 Fujitsu Ltd パルス計数回路及び不揮発性半導体記憶装置
CN101039108A (zh) * 2006-03-13 2007-09-19 株式会社瑞萨科技 延迟同步电路及半导体集成电路器件
CN102369668A (zh) * 2009-03-30 2012-03-07 太阳诱电株式会社 半导体装置

Also Published As

Publication number Publication date
KR20180035120A (ko) 2018-04-05
CN107872082A (zh) 2018-04-03
KR101944739B1 (ko) 2019-02-01
TWI636461B (zh) 2018-09-21
TW201814718A (zh) 2018-04-16
JP6390683B2 (ja) 2018-09-19
US10204687B2 (en) 2019-02-12
US20180090214A1 (en) 2018-03-29
JP2018056322A (ja) 2018-04-05

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