CN107857588A - 一种改性pzt压电陶瓷材料的制备方法 - Google Patents

一种改性pzt压电陶瓷材料的制备方法 Download PDF

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CN107857588A
CN107857588A CN201711158557.8A CN201711158557A CN107857588A CN 107857588 A CN107857588 A CN 107857588A CN 201711158557 A CN201711158557 A CN 201711158557A CN 107857588 A CN107857588 A CN 107857588A
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黄秋兰
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Foshan White Rice Ceramics Co Ltd
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Abstract

一种改性PZT压电陶瓷材料的制备方法，所述改性PZT压电陶瓷材料的化学通式为：Pb1‑a‑ bBa aSrbZr1‑xTixO3+Ywt%Sb2O3+Zwt%Pb3O4+M wt%KTiO3，其中0.04≤a≤0.16；0.04≤b≤0.12；0.44≤x≤0.46；0.5≤Y≤0.6；0.3≤Z≤0.40；0.1≤Z≤0.6；按照成分比研磨煅烧得到的PZT压电陶瓷材料具有较好的压电性能。

Description

一种改性PZT压电陶瓷材料的制备方法
技术领域
本发明涉及一种压电陶瓷的制备方法，特别是改性PZT压电陶瓷材料的制备方法。
背景技术
CN2014103410173公开了一种改性PZT压电陶瓷材料及其制备方法，通过该方法制备的压电陶瓷具有较好的压电性能。
发明内容
本发明在上述现有技术的基础上，在其中加入钙钛矿相，其压电性能相对于上述的陶瓷可提升1-3%个百分点。
本发明的具体的技术方案为：
一种改性PZT压电陶瓷材料的制备方法，所述改性PZT压电陶瓷材料的化学通式为：
Pb1-a-bBa aSrbZr1-xTixO3+Ywt%Sb2O3+Zwt %Pb3O4+M wt %KTiO3，其中0.04≤a≤0.16；0.04≤b≤0.12； 0.44≤x≤0.46；0.5≤Y≤0.6；0.3≤Z≤0.40；0.1≤Z≤0.6；
所述方法包括如下步骤：
步骤一、按照上述的化学计量配比各个Pb、Ba、Sr、Zr、Ti、K化合物的均一混合物；
步骤二、粗磨，将称量好的化合物装入所述振磨机中，按混合料：钢球=1：2，振磨直至混合物转化为均一分体；
步骤三、诱导所述均一粉体中的反应以产生混合金属氧化物；
步骤四、细磨，在破碎机中破碎成粒径小于0.2mm的粉体，再在振磨机中振磨，按混合料：钢球=1：2，振磨时间10小时左右，制得压电陶瓷粉体；
步骤五、流延，将压电陶瓷粉体和粘合剂加入到搅拌球磨机中，搅拌球磨10小时，制得流延浆料，在流延机中流延成厚度为0.03mm~0.15mm的压电陶瓷膜片；
步骤六、排胶，将压电陶瓷膜片叠成厚为12mm~20mm，在井式炉中排胶，最高温度780℃~820℃，排胶时间50小时；
步骤七、烧成，排胶好的压电陶瓷片盖上氧化铝坩埚，送进隧道窑中烧成，最高温度1150℃~1250℃，烧成时间20小时；
步骤八、施电极，将烧成的压电陶瓷片剥开，清洗，印银，在隧道窑中烧银，最高温度750℃~850℃，烧成时间3小时；
步骤九、极化，将压电陶瓷银片加直流电极化，极化温度80℃~140℃，极化时间20分钟~40分钟，极化场强1KV/MM~2KV/MM。
通过上述的技术方案增加钙钛矿相KTiO3，并适当调整各成分比例，使得陶瓷材料性能提升1-3个百分点。
具体实施方式
一种改性PZT压电陶瓷材料的制备方法，所述改性PZT压电陶瓷材料的化学通式为：
Pb1-a-bBa aSrbZr1-xTixO3+Ywt%Sb2O3+Zwt %Pb3O4+M wt %KTiO3，其中0.04≤a≤0.16；0.04≤b≤0.12； 0.44≤x≤0.46；0.5≤Y≤0.6；0.3≤Z≤0.40；0.1≤Z≤0.6；
所述方法包括如下步骤：
步骤一、按照上述的化学计量配比各个Pb、Ba、Sr、Zr、Ti、K化合物的均一混合物；
步骤二、粗磨，将称量好的化合物装入所述振磨机中，按混合料：钢球=1：2，振磨直至混合物转化为均一分体；
步骤三、诱导所述均一粉体中的反应以产生混合金属氧化物；
步骤四、细磨，在破碎机中破碎成粒径小于0.2mm的粉体，再在振磨机中振磨，按混合料：钢球=1：2，振磨时间10小时左右，制得压电陶瓷粉体；
步骤五、流延，将压电陶瓷粉体和粘合剂加入到搅拌球磨机中，搅拌球磨10小时，制得流延浆料，在流延机中流延成厚度为0.03mm~0.15mm的压电陶瓷膜片；
步骤六、排胶，将压电陶瓷膜片叠成厚为12mm~20mm，在井式炉中排胶，最高温度780℃~820℃，排胶时间50小时；
步骤七、烧成，排胶好的压电陶瓷片盖上氧化铝坩埚，送进隧道窑中烧成，最高温度1150℃~1250℃，烧成时间20小时；
步骤八、施电极，将烧成的压电陶瓷片剥开，清洗，印银，在隧道窑中烧银，最高温度750℃~850℃，烧成时间3小时；
步骤九、极化，将压电陶瓷银片加直流电极化，极化温度80℃~140℃，极化时间20分钟~40分钟，极化场强1KV/MM~2KV/MM。
通过上述的技术方案增加钙钛矿相KTiO3，并适当调整各成分比例，使得陶瓷材料性能提升1-3个百分点。

Claims (1)

1.一种改性PZT压电陶瓷材料的制备方法，所述改性PZT压电陶瓷材料的化学通式为：
Pb1-a-bBa aSrbZr1-xTixO3+Ywt%Sb2O3+Zwt %Pb3O4+M wt %KTiO3，其中0.04≤a≤0.16；0.04≤b≤0.12；
0.44≤x≤0.46；0.5≤Y≤0.6；0.3≤Z≤0.40；0.1≤Z≤0.6；
所述方法包括如下步骤：
步骤一、按照上述的化学计量配比各个Pb、Ba、Sr、Zr、Ti、K化合物的均一混合物；
步骤二、粗磨，将称量好的化合物装入所述振磨机中，按混合料：钢球=1：2，振磨直至混合物转化为均一分体；
步骤三、诱导所述均一粉体中的反应以产生混合金属氧化物；
步骤四、细磨，在破碎机中破碎成粒径小于0.2mm的粉体，再在振磨机中振磨，按混合料：钢球=1：2，振磨时间10小时左右，制得压电陶瓷粉体；
步骤五、流延，将压电陶瓷粉体和粘合剂加入到搅拌球磨机中，搅拌球磨10小时，制得流延浆料，在流延机中流延成厚度为0.03mm~0.15mm的压电陶瓷膜片；
步骤六、排胶，将压电陶瓷膜片叠成厚为12mm~20mm，在井式炉中排胶，最高温度780℃~820℃，排胶时间50小时；
步骤七、烧成，排胶好的压电陶瓷片盖上氧化铝坩埚，送进隧道窑中烧成，最高温度1150℃~1250℃，烧成时间20小时；
步骤八、施电极，将烧成的压电陶瓷片剥开，清洗，印银，在隧道窑中烧银，最高温度750℃~850℃，烧成时间3小时；
步骤九、极化，将压电陶瓷银片加直流电极化，极化温度80℃~140℃，极化时间20分钟~40分钟，极化场强1KV/MM~2KV/MM。
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CN111747740A (zh) * 2020-06-28 2020-10-09 安徽容知日新科技股份有限公司 钐离子掺杂锆钛酸铅基高性能压电陶瓷及其制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111747740A (zh) * 2020-06-28 2020-10-09 安徽容知日新科技股份有限公司 钐离子掺杂锆钛酸铅基高性能压电陶瓷及其制备方法
CN111747740B (zh) * 2020-06-28 2022-06-10 安徽容知日新科技股份有限公司 钐离子掺杂锆钛酸铅基高性能压电陶瓷及其制备方法

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