CN107747133A - 一种电池单晶硅片的制绒方法 - Google Patents
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000005530 etching Methods 0.000 title claims abstract description 18
- 210000002268 wool Anatomy 0.000 claims abstract description 32
- 235000008216 herbs Nutrition 0.000 claims abstract description 31
- 239000000654 additive Substances 0.000 claims abstract description 18
- 230000000996 additive effect Effects 0.000 claims abstract description 18
- 229920001577 copolymer Polymers 0.000 claims abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 13
- -1 paratoluenesulfonic acid sodium salt Chemical class 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 claims abstract description 7
- 235000010234 sodium benzoate Nutrition 0.000 claims abstract description 6
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229960001484 edetic acid Drugs 0.000 claims abstract description 5
- 229920001223 polyethylene glycol Polymers 0.000 claims abstract description 5
- 239000004299 sodium benzoate Substances 0.000 claims abstract description 5
- DBBAUITUQRZERI-UHFFFAOYSA-N 2-ethenyl-1h-imidazole;1-ethenylpyrrolidin-2-one Chemical compound C=CC1=NC=CN1.C=CN1CCCC1=O DBBAUITUQRZERI-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims abstract description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 235000011121 sodium hydroxide Nutrition 0.000 claims description 16
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 239000001294 propane Substances 0.000 claims description 2
- 239000003513 alkali Substances 0.000 abstract description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 3
- 229920001451 polypropylene glycol Polymers 0.000 abstract 1
- 239000003643 water by type Substances 0.000 description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 5
- 229910052708 sodium Inorganic materials 0.000 description 5
- 239000011734 sodium Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- 229920002554 vinyl polymer Polymers 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- FRTNIYVUDIHXPG-UHFFFAOYSA-N acetic acid;ethane-1,2-diamine Chemical class CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCN FRTNIYVUDIHXPG-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229920000463 Poly(ethylene glycol)-block-poly(propylene glycol)-block-poly(ethylene glycol) Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- MZSDGDXXBZSFTG-UHFFFAOYSA-M sodium;benzenesulfonate Chemical compound [Na+].[O-]S(=O)(=O)C1=CC=CC=C1 MZSDGDXXBZSFTG-UHFFFAOYSA-M 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
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Abstract
本发明提供一种电池单晶硅片的制绒方法，该制绒方法包括如下步骤：将乙烯基吡咯烷酮‑乙烯基咪唑的共聚物，聚乙二醇‑聚丙二醇‑聚乙二醇共聚物，乙二胺四乙酸，单乙醇胺，苯甲酸钠，对甲苯磺酸钠溶解到余量的水中；将步骤1）制得的制绒添加剂加到碱溶液中，混合均匀；将单晶硅片置入步骤2）制得的制绒液中进行制绒，该方法在对单晶硅片进行制绒时，将本发明中的制绒添加剂按照一定比例加入到碱液中，即可实现快速制绒效果。
Description
技术领域
本发明涉及太阳光伏电池技术领，尤其涉及一种电池单晶硅片的制绒方法。
背景技术
碱液对单晶硅片的[100]晶面蚀刻较快，而对[111]晶面的蚀刻较慢。由此而产生的蚀刻速率差将会导致在使用碱液对硅片进行蚀刻的过程中单晶硅片表面会形成金字塔结构。该结构能有效减少硅片对光的反射。在太阳能电池片的制备过程中，硅片对光的反射越低，硅片对光的吸收越多，太阳能电池转换效率也越高。通过上述碱液蚀刻的方法对单晶硅片表面进行织构化处理是常用的增加晶体硅对光的吸收的有效途径之一。现有的单晶硅制绒工艺通常需要600 s-900 s的制绒时间，效率较低，如果能缩短制绒时间，将能有效提高生产效率。本专利的制绒添加剂可极大的缩短制绒时间，且制绒后单晶硅表面的金字塔的尺寸大小和分布与常规工艺接近。
发明内容
本发明提供一种电池单晶硅片的制绒方法；该制绒方法包括如下步骤：1）制绒添加剂的配置：依次将乙烯基吡咯烷酮-乙烯基咪唑的共聚物1.5份，聚乙二醇-聚丙二醇-聚乙二醇共聚物1.5份，乙二胺四乙酸0.3份，单乙醇胺2份，苯甲酸钠0.2份，对甲苯磺酸钠0.5份溶解到100份水中，混合均匀；2）制绒液的配置：将步骤1）制得的制绒添加剂加到氢氧化钠水溶液中，混合均匀；所述的制绒添加剂与碱溶液的质量比为0.2:100，所述的氢氧化钠水溶液的质量分数为3%；3）将单晶硅片置入步骤2）制得的制绒液中进行制绒，制绒温度为75~88 oC，制绒时间为300~420 s。
与现有技术相比，本发明具有以下有益效果：
本发明提供的单晶硅片制绒方法可快速对单晶硅片进行表面制绒，制绒时间较常规工艺缩短50%以上；且在制绒过程中无需补加制绒添加剂，在提高制绒效率的同时降低成本。同时，本专利的制绒添加剂无毒性、无腐蚀性，对人体和环境无危害。
本发明的优点还在于：快速制绒后得到的绒面金字塔的尺寸较小，分布较窄，对光的反射率低，经组装得到的太阳能电池片的光电转换效率高。该添加剂成本较低，效率较高，效果显著，具有极佳的实用价值。
附图说明
图1为本发明提供的制绒方法得到的单晶硅表面的金字塔1；
图2为本发明提供的制绒方法得到的单晶硅表面的金字塔2。
具体实施方式
实施例1
工艺步骤如下：
1. 配置制绒添加剂：将0.5 g乙烯基吡咯烷酮-乙烯基咪唑的共聚物（数均分子量为），1 g聚乙二醇-聚丙二醇-聚乙二醇共聚物，0.5 g乙二胺四乙酸，2 g单乙醇胺，0.1 g苯甲酸钠和0.25 g对甲苯磺酸钠依次溶解到100 ml去离子水中。
2. 配置碱液：将10 g氢氧化钠溶于990 g去离子水中，得到质量分数为1%的氢氧化钠水溶液。
3. 配置碱性制绒液：将步骤1所得的制绒添加剂和步骤2得到的碱液以质量比为0.5:100混合均匀。
4. 制绒工艺：将太阳能电池用单晶硅片浸没入步骤3制备的碱性制绒液进行表面制绒，制绒温度为85 oC，制绒时间为300 s。
实施例2
工艺步骤如下：
1. 配置制绒添加剂：将1 g乙烯基吡咯烷酮-乙烯基咪唑的共聚物，2 g聚乙二醇-聚丙二醇-聚乙二醇共聚物，0.1 g乙二胺四乙酸，0.5 g单乙醇胺，0.05 g苯甲酸钠和0.5 g对甲苯磺酸钠依次溶解到100 ml去离子水中。
2. 配置碱液：将15 g氢氧化钾溶于985 g去离子水中，得到质量分数为1.5%的氢氧化钾水溶液。
3. 配置碱性制绒液：将步骤1所得的制绒添加剂和步骤2得到的碱液以质量比为1:100混合均匀。
4. 制绒工艺：将太阳能电池用单晶硅片浸没入步骤3制备的碱性制绒液进行表面制绒，制绒温度为75 oC，制绒时间为420 s。
实施例3
工艺步骤如下：
1. 配置制绒添加剂：将2 g乙烯基吡咯烷酮-乙烯基咪唑的共聚物，1 g聚乙二醇-聚丙二醇-聚乙二醇共聚物，乙二胺四乙酸0.5，单乙醇胺3，苯甲酸钠 0.1，对甲苯磺酸钠 0.5g依次溶解到100 ml去离子水中。
2. 配置碱液：将20 g氢氧化钠溶于980 g去离子水中，得到质量分数为2%的氢氧化钠水溶液。
3. 配置碱性制绒液：将步骤1所得的制绒添加剂和步骤2得到的碱液以质量比为0.1:100混合均匀。
4. 制绒工艺：将太阳能电池用单晶硅片浸没入步骤3制备的碱性制绒液进行表面制绒，制绒温度为88 oC，制绒时间为300 s。
实施例4
工艺步骤如下：
1. 配置制绒添加剂：将1.5 g乙烯基吡咯烷酮-乙烯基咪唑的共聚物，1.5 g聚乙二醇-聚丙二醇-聚乙二醇共聚物，乙二胺四乙酸0.3，单乙醇胺2，苯甲酸钠 0.2，对甲苯磺酸钠0.5依次溶解到100 ml去离子水中。
2. 配置碱液：将30 g氢氧化钠溶于970 g去离子水中，得到质量分数为3%的氢氧化钠水溶液。
3. 配置碱性制绒液：将步骤1所得的制绒添加剂和步骤2得到的碱液以质量比为0.2:100混合均匀。
4. 制绒工艺：将太阳能电池用单晶硅片浸没入步骤3制备的碱性制绒液进行表面制绒，制绒温度为83 oC，制绒时间为400 s。
采用本实施例提供的技术方案可快速获得细小、均匀的绒面金字塔。如图1和图2所示，得到的尺寸达到10um；该法成本较低，效率较高，效果显著，具有极佳的实用价值。
Claims (1)
1.一种电池单晶硅片的制绒方法，其特征在于：该制绒方法包括如下步骤：1）制绒添加剂的配置：依次将乙烯基吡咯烷酮-乙烯基咪唑的共聚物1.5份，聚乙二醇-聚丙二醇-聚乙二醇共聚物1.5份，乙二胺四乙酸0.3份，单乙醇胺2份，苯甲酸钠0.2份，对甲苯磺酸钠 0.5份溶解到100份水中，混合均匀；
2）制绒液的配置：将步骤1）制得的制绒添加剂加到氢氧化钠水溶液中，混合均匀；所述的制绒添加剂与碱溶液的质量比为0.2:100，所述的氢氧化钠水溶液的质量分数为3%；
3）将单晶硅片置入步骤2）制得的制绒液中进行制绒，制绒温度为75~88 oC，制绒时间为300~420 s。
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101935884A (zh) * | 2009-07-02 | 2011-01-05 | 比亚迪股份有限公司 | 一种制备绒面多晶硅片的方法 |
| CN102479698A (zh) * | 2010-11-24 | 2012-05-30 | 气体产品与化学公司 | 用于硅片制绒的组合物和方法 |
| CN106835288A (zh) * | 2016-12-30 | 2017-06-13 | 德清丽晶能源科技有限公司 | 一种单晶硅片的制绒方法 |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101935884A (zh) * | 2009-07-02 | 2011-01-05 | 比亚迪股份有限公司 | 一种制备绒面多晶硅片的方法 |
| CN102479698A (zh) * | 2010-11-24 | 2012-05-30 | 气体产品与化学公司 | 用于硅片制绒的组合物和方法 |
| EP2458622A3 (en) * | 2010-11-24 | 2013-05-22 | Air Products and Chemicals, Inc. | Compositions and methods for texturing of silicon wafers |
| CN106835288A (zh) * | 2016-12-30 | 2017-06-13 | 德清丽晶能源科技有限公司 | 一种单晶硅片的制绒方法 |
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