CN107457494A - 漏光检测方法 - Google Patents
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Abstract
本发明提供漏光检测方法,能够容易地检测当照射对于晶片具有透过性的波长的激光光线而形成改质层时到达晶片的下表面的激光光线的漏光。一种漏光检测方法,该漏光检测方法包含如下的工序:涂装工序,利用油性标记对涂装晶片的下表面进行涂装;压接工序,将粘合带压接在晶片的下表面上;改质层形成工序,将对于晶片具有透过性的波长的激光光线的聚光点从晶片的上表面定位在晶片的内部而进行照射从而形成改质层;剥离工序,将所压接的粘合带剥离;以及漏光检测工序,检测涂布在下表面上的涂装因该剥离工序而被去除的区域作为存在漏光的区域。
Description
技术领域
本发明涉及漏光检测方法,当将对于晶片具有透过性的波长的激光光线的聚光点从晶片的上表面定位在晶片的内部而进行照射从而形成改质层时,检测到达晶片的下表面的激光光线的漏光。
背景技术
由分割预定线划分而在正面上形成有IC、LSI等多个器件的晶片被切割装置、激光加工装置分割成各个器件芯片,分割得到的器件芯片被应用在移动电话、个人计算机等电子设备中。
激光加工装置大致包含:卡盘工作台,其对晶片进行保持;激光照射单元,其照射对于保持在该卡盘工作台上的晶片具有透过性的波长的脉冲激光光线;以及加工进给单元,其对该卡盘工作台和激光照射单元相对地进行加工进给,该激光加工装置能够在晶片的与分割预定线对应的内部形成作为分割起点的改质层(例如,参照专利文献1。)。
并且,由于当将激光光线的聚光点从形成有器件的晶片的正面侧定位在与分割预定线对应的晶片的内部时,形成于晶片的正面的器件被激光光线的一部分照射而产生损伤以及激光光线因分割预定线上的凹凸而发生不规则反射,所以通常进行从晶片的背面侧照射激光光线而形成改质层的加工。
专利文献1:日本特许第3408805号公报
这里,根据通过上述的激光加工装置在晶片的内部形成改质层的激光加工,从背面照射的激光光线的能量基本被使用于形成改质层,但有时也会因所选择的波长或输出以及其他的加工条件而使一部分激光光线成为漏光而到达晶片的正面。在从晶片的背面侧照射的激光光线保持原状地直行并漏出到正面侧的分割预定线上的情况下,并不会特别地成为问题。但是,有时聚光点被定位在晶片的内部的激光光线因之前形成的改质层或从改质层延伸的裂纹等影响而发生折射或反射从而被引导至随机的方向上,会到达沿着分割预定线配置的器件并造成损伤。因此,在照射激光光线而在晶片的内部形成改质层时,需要预先验证出该漏光对器件造成影响的加工条件,并采取尽可能地回避该加工条件的设定。但是,以往,存在无法容易地把握上述漏光如何产生的问题。
发明内容
本发明是鉴于上述事实而完成的,其主要的技术课题在于,提供漏光的检测方法,当将对于晶片具有透过性的波长的激光光线的聚光点从晶片的上表面定位在晶片的内部而进行照射从而形成改质层时,能够容易地检测到达晶片的下表面的激光光线的漏光。
根据本发明的一个侧面,提供漏光检测方法,当将对于晶片具有透过性的波长的激光光线的聚光点从晶片的上表面定位在晶片的内部而进行照射从而形成改质层时,检测到达晶片的下表面的激光光线的漏光,其特征在于,该漏光检测方法具有如下的工序:涂装工序,对晶片的下表面涂装油性标记;压接工序,在实施了涂装工序之后,将粘合带压接在晶片的下表面上;改质层形成工序,在实施了压接工序之后,将对于晶片具有透过性的波长的激光光线的聚光点从晶片的上表面定位在晶片的内部而进行照射从而形成改质层;剥离工序,在实施了改质层形成工序之后,将所压接的粘合带剥离;以及漏光检测工序,检测涂布在下表面上的涂装因该剥离工序而被去除的区域作为存在漏光的区域。
并且,根据本发明的另一侧面,提供漏光检测方法,当将对于晶片具有透过性的波长的激光光线的聚光点从晶片的上表面定位在晶片的内部而进行照射从而形成改质层时,检测到达晶片的下表面的激光光线的漏光,其特征在于,该漏光检测方法具有如下的工序:涂装工序,对晶片的下表面涂装油性标记;改质层形成工序,在实施了涂装工序之后,将对于晶片具有透过性的波长的激光光线的聚光点从晶片的上表面定位在晶片的内部而进行照射从而形成改质层;压接工序,在实施了改质层形成工序之后,将粘合带压接在晶片的下表面上;剥离工序,将所压接的粘合带剥离;以及漏光检测工序,检测涂布在下表面上的涂装因该剥离工序而被去除的区域作为存在漏光的区域。
作为在该涂装工序中使用的油性标记,优先选择黑色。并且,在该压接工序中,优选使用粘合层因紫外线的照射而硬化的粘合带,在该剥离工序中,在对粘合带照射紫外线而使粘合层硬化之后将该粘合带剥离。
根据本发明,当将对于晶片具有透过性的波长的激光光线的聚光点从晶片的上表面定位在晶片的内部而进行照射从而形成改质层时,能够容易地检测到达晶片的下表面的激光光线的漏光,能够对产生使器件损伤的漏光的原因和用于尽量避免器件的损伤的各种激光加工条件进行研究。
附图说明
图1的(a)是仿制晶片的立体图,图1的(b)是将图1的(a)所示的仿制晶片的正面背面进行了翻转的状态的立体图。
图2是示出第一实施方式的粘合带的压接工序的立体图。
图3是示出第一实施方式的改质层形成工序的立体图。
图4是示出第一实施方式的紫外线照射工序的立体图。
图5是用于对第一、第二实施方式的剥离工序和漏光检测工序进行说明的立体图。
图6是示出第二实施方式的改质层形成工序的立体图。
图7是示出第二实施方式的粘合带的压接工序的立体图。
图8是示出第二实施方式的剥离工序的紫外线照射工序的立体图。
标号说明
10:仿制晶片;10a:上表面;10b:下表面;10c:涂装面;20:粘合带;30:激光加工装置;32:紫外线照射单元;101、102:漏光痕。
具体实施方式
以下,参照附图对本发明的漏光检测方法的第一实施方式进行详细地说明。在图1的(a)中示出了在本发明的漏光的检测方法中使用的仿制晶片10。该仿制晶片10由与在实际加工中使用的晶片相同的原材料形成,例如,可以选择硅(Si)晶片。虽然在该仿制晶片10的上表面10a和下表面10b上均未形成器件,但设想在下表面10b侧形成有器件,并对激光光线所照射的上表面10a侧实施研磨加工。另外,本发明的该仿制晶片10的原材料并不仅限于硅(Si),也可以从能够照射对于晶片具有透过性的波长的激光光线而在晶片的内部形成改质层的原材料例如蓝宝石、碳化硅(SiC)等中选择。并且,如果在通过激光加工形成改质层的设想晶片中不进行研磨加工,则不用特别地区分上表面和下表面,也可以将任意的面作为上表面,将另一个面作为下表面。
在准备了仿制晶片10之后,如图1的(b)所示,对该仿制晶片10的下表面10b实施涂装工序。更具体来说,通过油性标记来涂装该仿制晶片10的下表面10b侧并使其干燥而形成涂装面10c。作为油性标记,公知使用了将油溶性染料和树脂溶解在有机溶剂(醇类/芳香族类/脂肪族类等)中而得的速干性的油墨的油性标记和代替该油溶性染料而使用了将颜料和树脂溶解在有机溶剂中而得的油墨的油性标记,但在本实施方式中,选择使用了将油溶性染料和树脂溶解在有机溶剂中而得的速干性的油墨的油性标记来用于涂装。虽然所选择的染料的颜色并没有特别地限定,但由于当选择黑色油墨时后述的漏光的检测更容易,所以优选黑色油墨。
在对仿制晶片10实施了该涂装工序之后,实施压接工序。关于该压接工序,如图2所示,将粘合带20压接在仿制晶片10的下表面10b即形成了涂装面10c的面上。作为该粘合带20,能够使用紫外线(UV)硬化型的划片带,作为该划片带,例如,能够选择由聚乙烯(PVC)、聚烯烃(PO)制成的带。另外,在本实施方式中,使用了紫外线硬化型的划片带,但本发明未必仅限于此,也能够选择因其他外力的施加而硬化的粘合带、例如由热硬化性树脂构成的粘合带,并且,也可以使用不会因外力的施加而硬化的粘合带。但是,作为因外力的施加而硬化的粘合带,其粘合力会因外力的施加而降低,所以在作业性优异这一点上有利。
在实施了该压接工序之后,如图3所示,使用激光加工装置30(省略了整体图。)将对于仿制晶片10的原材料具有透过性的波长的激光光线的聚光点从仿制晶片10的上表面10a侧定位在仿制晶片10的内部而照射该激光光线,并使激光光线的照射位置和仿制晶片10在箭头X所示的方向上相对地移动而形成改质层P(改质层形成工序)。另外,虽然该改质层P形成在仿制晶片10的整个面上,但由于是用于漏光验证的改质层,因此将相邻的改质层P彼此的间隔设定成比为了对实际上形成有器件的晶片进行分割而实施激光加工的情况下宽。
上述的激光加工是参考所设想的晶片的实际的加工条件而确定的,例如,按照以下那样的加工条件来实施。
激光的波长:1342nm
重复频率:90kHz
平均输出:1.9W
光斑直径:1μm
加工进给速度:700mm/秒
晶片的厚度:775μm
聚光点的位置:距离晶片的上表面为700μm(距离下表面为75μm)
在实施了该改质层形成工序之后,接着实施将粘合带20剥离的剥离工序。更具体来说,如图4所示,使紫外线照射单元32进行动作而对压接有粘合带20的仿制晶片10的下表面10b侧照射紫外线(紫外线照射工序)。通过该紫外线的照射使粘合带20硬化,粘合带20对仿制晶片10的粘合力降低。然后,如图5所示,将粘合力降低了的粘合带20从仿制晶片10的下表面10b侧剥离(剥离工序)。
在图5中还一并示出了实施该剥离工序而剥离了粘合带20的仿制晶片10的下表面10b的局部放大图。在该局部放大图中示出了通过该剥离工序去除了涂装面10c的一部分之后的漏光痕101、102。直线状示出的漏光痕101是表示为了形成改质层P而照射的激光光线直行而到达仿制晶片10的下表面10b而得到的痕。检测到该漏光痕101的位置在实际的晶片中形成在分割预定线所处的位置,该漏光痕101并不会对晶片的品质造成不良影响。另一方面,关于形成在该直线状的漏光痕101的周围且没有构成为一定的形状漏光痕102,表示的是在实际的晶片中可能从分割预定线探出并到达形成有器件的区域的漏光痕。作业者为了对用于形成改质层的激光加工所引起的漏光的影响进行检测而实施该检测方法,作业者将粘合带20剥离而使漏光痕101、102露出,从而能够对漏光的影响进行检测(漏光检测工序)。另外,认为该漏光痕101、102露出的理由如下。
在通过油性标记对仿制晶片10的下表面10b实施了涂装之后,将粘合带20压接在该涂装面10c上,即使不照射激光光线而实施上述剥离工序,也不会产生该涂装面10c的剥离。这是因为所涂布的油性标记的油墨干燥从而使油墨牢固地固定粘接在仿制晶片10的下表面10b上。与此相对,当无助于改质层形成的激光光线的漏光到达下表面10b侧时,因该漏光的能量而使油性标记的油墨变质。并且,当因该漏光到达固定粘接在晶片下表面10b的涂装面10c而使该涂装面10c变质时,因漏光而发生了变质的区域成为容易从仿制晶片10的下表面10b剥离的状态,在该剥离工序中随着将粘合带20剥离,该变质区域与粘合带20一起被剥离,形成漏光痕101、102。
另外,根据本发明而构成的漏光检测方法并不仅限于上述的第一实施方式,也能够通过以下那样的第二实施方式来实施。另外,仅对与第一实施方式不同的点进行详细地说明,对其余的点进行简单地说明。
在第二实施方式中,首先,与第一实施方式同样,准备由硅(Si)构成的仿制晶片10并对下表面10b实施涂装工序,形成涂装面10c(参照图1。)。在实施了该涂装工序之后,如图6所示,在压接粘合带之前实施改质层形成工序。更具体来说,将对于仿制晶片10具有透过性的波长的激光光线的聚光点从仿制晶片10的上表面10a侧定位在仿制晶片的内部,从仿制晶片10的上表面10a侧使用激光加工装置30(省略了整体图。)照射该激光光线,并使其照射位置与仿制晶片10在箭头X所示的方向上相对地移动而形成改质层P(改质层形成工序)。另外,在与第一实施方式同样的加工条件下实施该激光加工。
在实施了该改质层形成工序之后,对仿制晶片10实施压接工序,将粘合带20压接在形成有涂装面10c的下表面10b上。进而,在实施了该压接工序之后,如图8所示,为了实施剥离工序,使紫外线照射单元32′进行动作而对压接有粘合带20的下表面10b照射紫外线(紫外线照射工序)。粘合带20因该紫外线的照射而硬化,对仿制晶片10的粘合力降低。之后,与图5所示的第一实施方式的剥离工序和漏光检测工序同样,将粘合力降低的粘合带20从仿制晶片10的下表面10b侧剥离(剥离工序)。然后,对用于形成改质层的激光加工所引起的漏光的影响进行检测的作业者能够通过将该粘合带20剥离而使漏光痕101、102露出,从而对漏光的影响进行验证(漏光检测工序)。
根据按照本发明实施的漏光检测方法,由于当将对于晶片具有透过性的波长的激光光线的聚光点从晶片的上表面定位在晶片的内部而进行照射从而形成改质层时,能够容易地检测到达晶片的下表面的激光光线的漏光的痕迹,所以在对晶片内部形成作为分割起点的改质层的激光加工中,能够容易地发现成为损伤器件的原因的激光加工条件,能够快速地研究出对策。
另外,在上述第一、第二实施方式中,在漏光检测时都使用了用于检测漏光的仿制晶片,但本发明并不仅限于此。例如,也能够在实际上形成有器件的晶片中对没有形成该器件的晶片的外周区域实施本发明的漏光检测方法。在该情况下,由于能够对实际上形成改质层而分别分割成器件的晶片本身检测漏光的影响,所以能够在更接近实际的状态下对漏光的影响进行验证,能够更合适地对激光加工的加工条件进行设定。
Claims (4)
1.一种漏光检测方法,当将对于晶片具有透过性的波长的激光光线的聚光点从晶片的上表面定位在晶片的内部而进行照射从而形成改质层时,检测到达晶片的下表面的激光光线的漏光,其特征在于,该漏光检测方法具有如下的工序:
涂装工序,对晶片的下表面涂装油性标记;
压接工序,在实施了涂装工序之后,将粘合带压接在晶片的下表面上;
改质层形成工序,在实施了压接工序之后,将对于晶片具有透过性的波长的激光光线的聚光点从晶片的上表面定位在晶片的内部而进行照射从而形成改质层;
剥离工序,在实施了改质层形成工序之后,将所压接的粘合带剥离;以及
漏光检测工序,检测涂布在下表面上的涂装因该剥离工序而被去除的区域作为存在漏光的区域。
2.一种漏光检测方法,当将对于晶片具有透过性的波长的激光光线的聚光点从晶片的上表面定位在晶片的内部而进行照射从而形成改质层时,检测到达晶片的下表面的激光光线的漏光,其特征在于,该漏光检测方法具有如下的工序:
涂装工序,对晶片的下表面涂装油性标记;
改质层形成工序,在实施了涂装工序之后,将对于晶片具有透过性的波长的激光光线的聚光点从晶片的上表面定位在晶片的内部而进行照射从而形成改质层;
压接工序,在实施了改质层形成工序之后,将粘合带压接在晶片的下表面上;
剥离工序,将所压接的粘合带剥离;以及
漏光检测工序,检测涂布在下表面上的涂装因该剥离工序而被去除的区域作为存在漏光的区域。
3.根据权利要求1或2所述的漏光检测方法,其中,
在该涂装工序中使用的油性标记是黑色的。
4.根据权利要求1或2所述的漏光检测方法,其中,
在该压接工序中,使用粘合层因紫外线的照射而硬化的粘合带,在该剥离工序中,在对粘合带照射紫外线而使粘合层硬化之后将该粘合带剥离。
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CN105479019A (zh) * | 2014-10-02 | 2016-04-13 | 株式会社迪思科 | 晶片的加工方法 |
JP2016086079A (ja) * | 2014-10-27 | 2016-05-19 | 株式会社ディスコ | レーザー加工装置 |
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CN110970317A (zh) * | 2018-10-01 | 2020-04-07 | 英飞凌科技股份有限公司 | 晶片上粘合剂残留物检测 |
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US20170352627A1 (en) | 2017-12-07 |
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