WO2020258979A1 - Display panel, manufacturing method thereof, and motherboard - Google Patents
Display panel, manufacturing method thereof, and motherboard Download PDFInfo
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- WO2020258979A1 WO2020258979A1 PCT/CN2020/083535 CN2020083535W WO2020258979A1 WO 2020258979 A1 WO2020258979 A1 WO 2020258979A1 CN 2020083535 W CN2020083535 W CN 2020083535W WO 2020258979 A1 WO2020258979 A1 WO 2020258979A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Definitions
- the embodiments of the present disclosure relate to a display panel, a manufacturing method thereof, and a motherboard.
- Micro-LED display has the advantages of fast response time, high image quality, high contrast, high color gamut, long life, and low power consumption.
- Micro-LED technology has developed into one of the hot spots of display technology in the future.
- Micro LED technology faces considerable technical challenges.
- the embodiments of the present disclosure provide a display panel, a manufacturing method thereof, and a motherboard.
- a motherboard including: a base substrate, a plurality of target areas on the base substrate, a piezoelectric film and an acoustic wave excitation structure; wherein the acoustic wave excitation structure is located In areas other than the multiple target areas and in contact with the piezoelectric film, the acoustic wave excitation structure is used to generate surface acoustic waves under the control of a driving signal;
- each of the target areas includes: located on the base substrate On the insulating layer, and a plurality of grooves for accommodating micro light-emitting diodes on the side of the insulating layer away from the base substrate; and the piezoelectric film is located in the grooves other than each of the grooves Area, each of the grooves has a driving electrode and a first magnetic structure.
- the plurality of target regions are arranged in an array;
- the acoustic wave excitation structure includes: a plurality of first interdigital electrodes extending in a column direction and arranged in a row direction; two first interdigital electrodes adjacent in the row direction There is at least one of the plurality of target regions between the electrodes.
- L 1 m*(a 1 +b 1 ); where a 1 is the first a fork finger width of the interdigital electrode, b 1 means an electrode finger pitch of the first fork, m is an integer greater than zero.
- the plurality of target regions are arranged in an array;
- the acoustic wave excitation structure includes: a plurality of first interdigital electrodes extending in a column direction and arranged in a row direction, and a plurality of first interdigital electrodes extending in a row direction and arranged in a column direction.
- Second interdigital electrodes wherein there is at least one target area between two adjacent first interdigital electrodes in the row direction, and at least one second interdigital electrode is provided between two adjacent second interdigital electrodes in the column direction One of the target areas.
- the first interdigital electrode includes: at least two first sub-interdigital electrodes extending in the column direction and arranged in the column direction; and/or, the second interdigital electrode includes: extending in the row direction and extending along the At least two second sub-interdigital electrodes arranged in a row direction.
- the first magnetic structure is located on the side of the drive electrode away from the base substrate; and the orthographic projection of the first magnetic structure on the base substrate is located on the drive electrode in the same groove In the range of the orthographic projection on the base substrate.
- the motherboard further includes: a micro light emitting diode located in the groove;
- the micro light emitting diode includes: a first extraction electrode on the same side and a second magnetic structure that is magnetically opposite to the first magnetic structure , And a second extraction electrode on the other side opposite to the first extraction electrode; wherein, the first extraction electrode of the micro light-emitting diode and the driving electrode located in the same groove Electric connection.
- At least one embodiment of the present disclosure also provides a display panel, including: a base substrate, an insulating layer on the base substrate, and a piezoelectric film on a side of the insulating layer away from the base substrate;
- the insulating layer has a plurality of grooves on one side away from the base substrate; each of the grooves has a driving electrode and a first magnetic structure, and is located one side away from the base substrate.
- the micro light-emitting diode includes: a first extraction electrode on the same side and a second magnetic structure that is magnetically opposite to the first magnetic structure, and a first extraction electrode on the other side Oppositely arranged second lead electrodes; wherein, the first lead electrodes of the micro light emitting diode are electrically connected to the driving electrodes in the same groove.
- the first extraction electrode of the micro light-emitting diode and the driving electrode are bonded and connected by a contact material.
- At least one embodiment of the present disclosure further provides a manufacturing method of a display panel, including: providing a suspension in which a plurality of micro-light-emitting diodes are suspended; each of the micro-light-emitting diodes includes: two extraction electrodes on two sides, respectively, And a second magnetic structure on one side that is magnetically opposite to the first magnetic structure; immersing the mother board according to any one of claims 1 to 7 in the suspension; applying a drive signal to the acoustic wave excitation structure To generate surface acoustic waves, so that the plurality of micro light-emitting diodes respectively fall into the plurality of grooves in the plurality of target regions;
- a contact material for the binding process is formed in each groove in the mother board; and each of the micro light-emitting diodes is heated Binding with the driving electrode in the corresponding groove.
- the mother board is placed in a closed space, and nitrogen gas is introduced to keep the air pressure in the closed space at least 3 standard atmospheres.
- the suspension includes the plurality of micro light-emitting diodes suspended in an ultrapure water stage.
- FIG. 1 is a schematic top view of an example of a motherboard provided by an embodiment of the disclosure
- FIG. 2 is a schematic cross-sectional view of an example of a motherboard provided by an embodiment of the disclosure
- FIG. 3 is a schematic diagram of parallel surface acoustic wave control microparticles generated by two parallel first interdigital electrodes in an embodiment of the disclosure
- Figure 4 is a schematic cross-sectional view corresponding to Figure 3;
- FIG. 5 is a schematic diagram of vertical surface acoustic wave control microparticles generated by a first interdigital electrode and a second interdigital electrode that are perpendicular to each other in an embodiment of the disclosure;
- FIG. 6 is a schematic top view of another example of a motherboard provided by an embodiment of the disclosure.
- FIG. 7 is a schematic top view of another example of a motherboard provided by an embodiment of the disclosure.
- FIG. 8 is a schematic top view of another example of a motherboard provided by an embodiment of the disclosure.
- FIG. 9 is a schematic cross-sectional view of another example of a motherboard provided by an embodiment of the disclosure.
- FIG. 10 is a schematic cross-sectional view of a display panel provided by an embodiment of the disclosure.
- FIG. 11 is a flowchart of a manufacturing method of a display panel provided by an embodiment of the disclosure.
- the technical difficulty in the Micro LED process is: After the photolithography step of the Micro LED, the LED bare chip particles need to be directly removed from the substrate (for example, The sapphire substrate) is transferred to the target substrate, and the lead electrode on the LED needs to be connected to the target substrate, and the transfer amount is very large each time, which requires very high stability and accuracy of the transfer process.
- the mainstream mass transfer technologies mainly include chip-level welding, epitaxial level welding, thin-film transfer, and thin-film transfer technologies.
- related technical solutions that directly or indirectly realize mass transfer are complex and costly.
- With LED crystal The further reduction of particles makes it difficult to meet the requirements for stability and accuracy of the transfer process.
- the embodiments of the present disclosure provide a display panel, a manufacturing method thereof, and a motherboard.
- the embodiment of the present disclosure provides a motherboard, as shown in Figs. 1 and 2, wherein Fig. 1 is a schematic structural diagram of the motherboard provided by an embodiment of the present disclosure, and Fig. 2 is a schematic cross-sectional view at the line segment AB in Fig. 1 .
- the mother board includes: a base substrate 101, a plurality of target regions 102 on the base substrate 101, a piezoelectric film 107 and an acoustic wave excitation structure 100.
- the acoustic wave excitation structure 100 is located in an area other than the plurality of target areas 102 and is in contact with the piezoelectric film 107.
- the acoustic wave excitation structure 100 is used to generate surface acoustic waves under the control of a driving signal.
- Each target area 102 includes an insulating layer 106 located on the base substrate 101, and a plurality of grooves 103 located on the side of the insulating layer 106 away from the base substrate 101 for accommodating micro light-emitting diodes.
- the piezoelectric film 107 is located in an area other than the plurality of grooves 103, and each groove 103 has a driving electrode 108 and a first magnetic structure 109.
- the acoustic wave excitation structure generates surface acoustic waves under the control of the drive signal, and the generated surface acoustic waves can be controlled to accurately fall into the grooves through the standing wave effect of the generated surface acoustic waves in the fluid.
- the motherboard provided by the embodiment of the present disclosure can realize the massive transfer of micro light-emitting diodes, the manufacturing process is simple and efficient, and the process cost can be effectively reduced.
- the acoustic wave excitation structure 100 is provided in areas other than the target area 102.
- the surface acoustic wave emitted by the acoustic wave excitation structure 100 is a kind of surface acoustic wave along the base substrate.
- the elastic acoustic wave propagating on the surface can concentrate energy on the surface of the base substrate, and can effectively realize the operation of driving and separating the fluid on the surface of the base substrate and the particles in the fluid.
- the array arrangement of the micro light emitting diodes in the target area 102 can be controlled, and grooves 103 can be arranged at the corresponding positions of the micro light emitting diode array arrangement.
- the size of can be set slightly larger than the micro light emitting diode to be transferred, and the micro light emitting diode can be controlled to accurately fall into each groove 103.
- the shape of the groove 103 can be selected according to needs. In the figure, a circle is taken as an example for description, but it is not limited to the above-mentioned shape of the groove 103, and may be other shapes.
- FIG. 2 is a schematic diagram of placing the master plate in the suspension.
- each groove 103 has a driving electrode 108 and a first magnetic structure 109.
- a second magnetic structure that is magnetically opposite to the first magnetic structure can be provided on the micro light-emitting diode to be transferred, so that during the transfer process, the magnetic attraction between the first magnetic structure 109 and the second magnetic structure can be used to control
- the micro light emitting diode is attached to the driving electrode in the groove with the side with the second magnetic structure to prevent the micro light emitting diode from being flipped.
- FIG. 2 only uses two of the grooves 103 as an example for schematic illustration, and the number of grooves 103 may be multiple.
- Micro LED technology is to reduce the length of ordinary light-emitting diodes (LEDs) to only 50um in length, which is about 1% of the size of ordinary LEDs.
- micro-level Micro LEDs can be moved to the base substrate.
- red (R), green (G), and blue (B) micro light-emitting diodes can be transferred to the base substrate to form an RGB full-color display, or only blue-emitting micro light-emitting diodes can be transferred.
- the light-emitting diodes will be subsequently realized in full color through quantum dots and fluorescent technology.
- surface acoustic waves can propagate from solid to liquid.
- the superposition of two rows of surface acoustic waves that propagate in opposite directions and the same frequency can form a surface acoustic wave standing wave.
- a pressure potential well is formed in the liquid and can be used to control microparticles.
- the force received by the microparticles is mainly composed of the primary radiation force and the secondary radiation force.
- the primary radiation force is the force of the standing wave field itself on the microparticles, and the secondary radiation force is generated by the scattering of sound waves between the microparticles. Among them, the secondary radiation force is small and negligible.
- the main radiation force can be decomposed into an axial component and a transverse component.
- the transverse component is perpendicular to the direction of sound wave propagation, and the axial component is along the direction of sound wave propagation.
- the force is greater than the lateral force.
- the axial force pushes the micro-particles to the node of the standing wave.
- the lateral force gathers the micro-particles and restricts their position.
- the axial radiation force formula shows the acoustic force
- the size is proportional to the square of the amplitude of the sound wave and the volume of the particle.
- the relational expression of the axial component force F r is as follows:
- P 0 is the acoustic wave amplitude
- V c is the volume of the microparticle
- ⁇ is the acoustic contrast factor
- ⁇ c is the particle density
- ⁇ c is the compressibility coefficient of the particle
- ⁇ w is related to ⁇ w
- the wave number k is 2 ⁇ / ⁇
- x is the distance between the microparticle and the node.
- the acoustic contrast factor may change significantly with changes in density and compressibility, thereby affecting the direction of acoustic force, that is, whether the microparticles are pushed toward the node or the antinode.
- the acoustic wave excitation structure 100 includes a plurality of interdigital electrodes.
- FIG. 3 two first interdigital electrodes 104 extending in the column direction and arranged in the row direction included in the acoustic wave excitation structure 100 are taken as an example for schematic illustration.
- FIG. 4 shows the mother board shown in FIG. 3 being placed in the suspension 204
- the cross-sectional schematic diagram in Figure 4 the curve on the surface of the mother board in Figure 4 represents the acoustic waveform generated by the acoustic excitation structure, and the intersection of the acoustic waveform represents the node of the standing wave.
- the piezoelectric film When AC driving signals are applied to the two bus lines of the first interdigital electrode 104, the piezoelectric film will produce periodic strain due to the piezoelectric effect, although the surface acoustic wave generated by each pair of interdigital electrodes in the first interdigital electrode 104 is excited It is weak, but when the period of the first interdigital electrode 104 is an integer multiple of the wavelength of the surface acoustic wave, the mutual superposition and enhancement of the acoustic waves can be generated, and at this time, a stronger surface acoustic wave can be excited.
- the process accuracy can generate surface acoustic waves with a wavelength of several micrometers to hundreds of micrometers through the excitation of the interdigital structure, and by coupling the surface acoustic waves in different propagation directions with each other, different types of performance acoustic waves can also be obtained.
- the interdigital width is a 1
- the interdigital distance is b 1
- the surface acoustic wave wavelength ⁇ 1 generated by the acoustic wave excitation structure 100 can be determined according to the following relationship:
- ⁇ 1 2*(a 1 +b 1 );
- the parallel surface acoustic waves generated by the two first interdigital structures 104 are coupled to generate a surface acoustic wave standing wave.
- the surface acoustic wave standing wave can generate a pressure potential well in the liquid, so that the micro particles in the liquid can be manipulated.
- the surface acoustic wave standing waves generated by the two first interdigital structures 104 can make the microparticles P Gathered at each node position and arranged in sequence along the column direction, the distance d 1 between adjacent microparticles P in the row direction is ⁇ 1 /2, that is, a 1 +b 1 , the microparticle P at the edge position
- grooves can be provided at the positions of each node, so that the microparticles P fall into the corresponding grooves, and grooves can be provided at the position where each microparticle P in FIG. 3 is located.
- the micro particles P are micro light emitting diodes, and the position of each groove can be determined according to the pixel distribution on the display panel to which the micro light emitting diode is to be transferred. For example, in a display panel, if the distance between two adjacent pixels in the row direction is ⁇ 1 /2, the distance between two adjacent pixels in the column direction is twice the diameter of the microparticle P in FIG. 3, Then, grooves are provided at the microparticles P in each odd row in FIG. 3.
- the distance between adjacent nodes can also be adjusted by adjusting the interdigital width and interdigital distance in the first interdigital electrode 104 to adjust the distance between adjacent grooves in the row direction.
- FIG. 5 takes two perpendicular first interdigital electrodes 104 and second interdigital electrodes 105 included in the acoustic wave excitation structure 100 as an example for illustration, so as to excite two rows of perpendicular surface acoustic waves. After the two rows of mutually perpendicular surface acoustic waves are coupled, a standing wave node with lattice distribution is formed.
- the mother board shown in FIG. 5 is placed in the suspension, and under the action of the surface acoustic wave, the microparticles will form an array-like distribution at each standing wave node, as shown in each microparticle P in FIG. 5.
- the width of the interdigital fingers is a 1
- the distance between the fingers is b 1.
- the microparticles P are arrayed in the standing wave field. Distributed at each node position, the distance d 1 between two adjacent micro particles in the row direction is ⁇ 1 /2, and the distance d 2 between two adjacent micro particles in the column direction is ⁇ 2 /2, and the edge is slightly smaller.
- the distance between the particles and the center of the first interdigital electrode 104 is n ⁇ 1 /2, and the distance between the edge micro particles and the center of the second interdigital electrode 105 is n ⁇ 2 /2, where ⁇ 1 and ⁇ 2 satisfy the following relationship:
- grooves can also be provided at the microparticles P shown in FIG. 5, so that the microparticles P fall into the corresponding grooves.
- Each microparticle P in FIG. 5 can be provided at the location where Groove.
- the micro particles P are micro light emitting diodes, and the position of each groove can be determined according to the pixel distribution on the display panel to which the micro light emitting diode is to be transferred. For example, in a display panel, if the distance between two adjacent pixels in the row direction is ⁇ 1 /2, and the distance between two adjacent pixels in the column direction is ⁇ 2 /2, it can be shown in Figure 5 A groove is provided at each microparticle P shown.
- the distance between adjacent nodes in the row direction can be adjusted by adjusting the interdigital width and the interdigital distance of the first interdigital electrode 104, so as to adjust the distance between adjacent grooves in the row direction.
- the width of the fingers of the finger electrode 105 and the finger pitch are used to adjust the distance between adjacent nodes in the column direction to adjust the distance between adjacent grooves in the column direction.
- the acoustic wave excitation structure 100 may include a plurality of interdigital electrodes 104, 105.
- a plurality of target areas 102 are arranged in an array
- the acoustic wave excitation structure 100 includes: a plurality of first interdigital electrodes 104 extending in the column direction and arranged in the row direction;
- the superimposition of the surface acoustic waves generated by the two adjacent first interdigital electrodes 104 in the row direction can enhance the energy of the surface acoustic wave, improve the ability to control the movement of the micro light emitting diode, and ensure that the micro light emitting diode can fall into the corresponding groove.
- the distance L 1 between two adjacent grooves 103 in the row direction in the target area 102 satisfies the following relationship:
- L 1 m*(a 1 +b 1 );
- a 1 is the interdigital width of the first interdigital electrode
- b 1 is the interdigital distance of the first interdigital electrode
- m is an integer greater than zero.
- the distance between two adjacent grooves 103 in the row direction in FIG. 1 is an integer multiple of the distance between two adjacent microparticles P in the row direction in FIG. 3, so as to ensure that the micro light emitting diode can fall during the transfer process.
- the distance between two adjacent grooves 103 in the row direction in FIG. 1 is an integer multiple of the distance between two adjacent microparticles P in the row direction in FIG. 3, so as to ensure that the micro light emitting diode can fall during the transfer process.
- the distance between two adjacent grooves 103 in the row direction in FIG. 1 is an integer multiple of the distance between two adjacent microparticles P in the row direction in FIG. 3, so as to ensure that the micro light emitting diode can fall during the transfer process.
- a plurality of target areas 102 are arranged in an array
- the acoustic wave excitation structure 100 includes: a plurality of first interdigital electrodes 104 extending in a column direction and arranged in a row direction, and a plurality of second interdigital electrodes 105 extending in a row direction and arranged in a column direction;
- the surface acoustic wave obtained by electrical signal excitation has standing wave nodes distributed in a lattice, and each first interdigital electrode 104 and each second interdigital electrode 104
- the superposition of the surface acoustic wave generated by the interdigital electrode 105 can enhance the energy of the surface acoustic wave and improve the ability to control the movement of the micro-light-emitting diode, so that more micro-light-emitting diodes can be moved, and the process of batch transfer of the micro-light-emitting diodes for multiple display panels is realized.
- each first interdigital electrode 104 may include: at least two first sub-interdigital electrodes 1041 extending in the column direction and arranged in the column direction. .
- the length of the target area 102 in the column direction can be made longer, so that a display panel with a larger area can be manufactured.
- the second interdigital electrode 105 includes: at least two second sub-interdigital electrodes 1051 extending in the row direction and arranged in the row direction. In this way, under the same process accuracy, the length of the target area 102 in the row direction can be made longer, so that a display panel with a larger area can be manufactured.
- At least two first sub-interdigital electrodes 1041 and at least two second sub-interdigital electrodes 1051 may also be included in both the row and column directions.
- the number of first sub-interdigital electrodes 1041 in the first interdigital electrode 104 and the number of second sub-interdigital electrodes 1051 in the second interdigital electrode 105 can be set according to the size of the target area required. That is to say, the number of the first interdigital electrode 1041 and the second interdigital electrode 1051 is not limited to the two exemplified above, and the first interdigital electrode and the second interdigital electrode may also include other numbers of sub-interdigital electrodes, respectively. Refers to the electrode.
- the distance L 1 between two adjacent grooves in the row direction in the target area 102, and the two adjacent grooves in the column direction satisfies the following relationship:
- L 1 m*(a 1 +b 1 );
- L 2 n*(a 2 +b 2 );
- a 1 is the interdigital width of the first interdigital electrode
- b 1 is the interdigital distance of the first interdigital electrode
- a 2 is the interdigital width of the second interdigital electrode
- b 2 is the finger of the second interdigital electrode. Spacing, m and n are integers greater than zero.
- the distance d 1 of two adjacent micro particles P in the row direction is determined by the interdigital width a 1 and the interdigital distance b 1 of the first interdigital electrode 104.
- each groove 103 corresponds to the position of the microparticle P in Fig. 5, one of the two adjacent grooves 103 in the row direction
- the distance between L 1 is an integer multiple of d 1 , so L 1 is m*(a 1 +b 1 ).
- the distance L 2 between two adjacent grooves 103 in the column direction is d 2 Is an integer multiple of, so L 2 is n*(a 2 +b 2 ).
- the interdigital width is in the range of 50-100 ⁇ m, and the acoustic wave wavelength is in the range of 200-400 ⁇ m.
- the number N of interdigital pairs determines the bandwidth of the acoustic wave excitation structure and the excitation intensity of the surface acoustic wave.
- the number of interdigital pairs may be 30, but the embodiment of the present disclosure is not limited thereto.
- the width of the first interdigital structure in the column direction or the width of the second interdigital structure in the row direction can be expressed as the delay line distance L, and the delay line distance L cannot be too long.
- L may be about 500 ⁇ , and the attenuation of surface acoustic wave energy is reduced by the arrayed arrangement of interdigital electrodes.
- the target area 102 is approximately a L*L square area.
- the acoustic aperture of the first interdigital electrode 104 is A 1
- the acoustic aperture of the second interdigital electrode 105 is A 2
- the acoustic aperture responds to the length of the interdigital electrode and can affect the excitation intensity of the interdigital electrode.
- the acoustic aperture can be set to (L- ⁇ )/n.
- the first magnetic structure 109 is located on the side of the driving electrode 108 away from the base substrate 101.
- the orthographic projection of the first magnetic structure 109 on the base substrate 101 is located within the range of the orthographic projection of the drive electrodes 108 in the same groove 103 on the base substrate 101.
- the size of the first magnetic structure 109 is smaller than the size of the drive electrode 108 in the same groove 103, and the drive electrode 108 will not be blocked by the first magnetic structure 109, so that the drive electrode 108 can be connected to the micro drive electrode 108 through the contact material 110 later.
- the light-emitting diode 20 is bonded and connected.
- the first magnetic structure 109 with conductivity may also be used.
- the piezoelectric film 107 can be made of aluminum nitride piezoelectric film material.
- the piezoelectric film 107 has better acid and alkali resistance, which improves the reliability of the display panel.
- the piezoelectric film 107 can be prepared by magnetron sputtering or chemical vapor deposition, and the thickness of the piezoelectric film 107 is about 10 ⁇ m.
- each driving electrode 108 is formed on the base substrate 101 at a position corresponding to each groove 103 to be formed, and then an insulating layer 106 is formed on the film layer where the driving electrode 108 is located, and the insulating layer 106 is patterned, for example An etching process can be used to form each groove 103 penetrating the insulating layer 106, so that the driving electrode 108 is located at the bottom of the corresponding groove 103, and then a pattern of the piezoelectric film 107 is formed on the insulating layer 106; or, An insulating layer 106 and a piezoelectric film 107 are sequentially formed on the film layer where the driving electrode 108 is located, and then an etching process is used to form grooves 103 penetrating the insulating layer 106 and the piezoelectric film 107.
- FIG. 9 is a schematic diagram of the structure after the mother board is taken out of the suspension after the micro-light emitting diode is transferred.
- the motherboard further includes a micro light emitting diode 20 located in the groove 103.
- the micro light-emitting diode 20 includes: a first extraction electrode 201 on the same side, a second magnetic structure 202 that is magnetically opposite to the first magnetic structure 109, and a second extraction electrode on the other side opposite to the first extraction electrode 201 203; the first lead electrode 201 of the micro light emitting diode 20 is electrically connected to the driving electrode 108 located in the same groove 103.
- the mother board in the embodiment of the present disclosure can be used to transfer micro light emitting diode chips with lead electrodes located on both sides.
- the magnetic structure of a magnetic structure 109 is opposite to that of the second magnetic structure 202.
- the first lead electrode 201 of the micro light emitting diode 20 can be electrically connected with the driving electrode 108 in the groove by magnetic attraction, and the micro light emitting diode 20 can be accurately controlled. It is electrically connected with the corresponding driving electrode 108 to prevent the micro light-emitting diode 20 from flipping.
- the size of the second magnetic structure 202 can be set to be smaller than the size of the first extraction electrode 201, so that the first extraction electrode 201 will not be blocked by the second magnetic structure 202, and the contact material 110 can be used later.
- the micro light emitting diode 20 and the driving electrode 108 are bonded and connected.
- the second magnetic structure 202 with electrical conductivity may also be used.
- the embodiments of the present disclosure also provide a display panel, which can be applied to any products or components with display functions such as mobile phones, tablet computers, televisions, displays, notebook computers, digital photo frames, navigators, etc. Since the principle of solving the problem of the display panel is similar to the above-mentioned motherboard, the implementation of the display panel can refer to the implementation of the above-mentioned motherboard, and the repetition will not be repeated.
- a display panel provided by an embodiment of the present disclosure includes: a base substrate 101, an upper insulating layer 106 located on the base substrate 101, and a piezoelectric element located on the side of the insulating layer 106 away from the base substrate 101 ⁇ 107 ⁇ Film 107.
- the insulating layer 106 has a plurality of grooves 103 on the side away from the base substrate 101.
- Each groove 103 has a driving electrode 108 and a first magnetic structure 109, and a micro light emitting diode 20 located on the side of the first magnetic structure 109 away from the base substrate 101; the micro light emitting diode 20 includes: first lead wires located on the same side The electrode 201 and the second magnetic structure 202 magnetically opposite to the first magnetic structure 109, and the second extraction electrode 203 disposed opposite to the first extraction electrode 201 on the other side.
- the first lead electrode 201 of the micro light emitting diode 20 is electrically connected to the driving electrode 108 located in the same groove 103.
- the base substrate may be, for example, a glass substrate, a quartz substrate, a plastic substrate, etc., but the disclosed embodiments of the board are not limited thereto.
- the display panel in the embodiment of the present disclosure is obtained by cutting the mother board after transferring the micro light emitting diode.
- the display panel shown in FIG. 10 can be obtained by cutting along the edge of the target area 102 in the motherboard.
- the resulting display panel does not have an acoustic wave excitation structure, thereby avoiding the acoustic wave excitation structure Occupying the frame area of the display panel is conducive to narrowing the frame of the display panel.
- cutting can also be performed in a certain area inside the target area 102, and the size of the area to be cut can be determined according to the required size of the display panel.
- the first lead electrode 201 of the micro light emitting diode 20 and the driving electrode 108 are bonded and connected by the contact material 110.
- materials such as tin or silver can be used as the contact material and bonded by welding, or alloy materials such as AuSn can also be used as the contact material and bonded by the eutectic method.
- the embodiment of the present disclosure also provides a manufacturing method of the display panel. As shown in FIG. 11, the method includes:
- each micro-light-emitting diode includes: two extraction electrodes respectively located on two sides, and a second magnetic structure located on one side and magnetically opposite to the first magnetic structure;
- S303 Apply a driving signal to the acoustic wave excitation structure to generate surface acoustic waves, so that a plurality of micro light-emitting diodes respectively fall into the grooves in the target area of the motherboard;
- the suspension may be ultrapure water, or a surfactant may be added to the ultrapure water. Except for water molecules, ultrapure water has almost no impurities, no bacteria, viruses and other substances. It will not react with inorganic substances such as silicon and metals, and will not corrode the extraction electrode and the second magnetic material in the micro-light emitting diode, and it can also maintain The micro light-emitting diode suspended in the suspension has a stable surface specificity.
- step S302 as shown in FIG. 2 and FIG. 9, the mother board without the micro light emitting diode in the groove is immersed in the suspension.
- a drive signal is applied to the acoustic wave excitation structure to generate surface acoustic waves.
- the micro light emitting diode 20 is moved to the node position of the surface acoustic wave under the control of the surface acoustic wave.
- the grooves 103 are respectively located at the node positions, and under the action of the magnetic attraction between the first magnetic structure 109 and the second magnetic structure 202, the side of the micro light emitting diode 20 with the first extraction electrode 201 can be made to face the liner.
- the base substrate 101 falls into the groove 103.
- step S304 the micro light-emitting diodes in the groove are fixed, and the first lead electrode of the micro light-emitting diode can be fixedly connected with the driving electrode in the groove by binding.
- micro light emitting diodes can also be used in the subsequent transfer process to avoid wasting micro light emitting diodes and save manufacturing costs .
- the mother board is cut to obtain multiple display panels, thereby realizing the batch transfer of the micro light-emitting diodes from the multiple display panels, and the manufacturing efficiency is high.
- the edge of the target area in the mother board or part of the target area can be cut, so that the cut display panel does not have an acoustic wave excitation structure, which is beneficial to narrow the frame of the display panel.
- step S302 it may further include:
- the foregoing step S305 may include:
- micro light-emitting diodes are bound to the driving electrodes in the corresponding grooves by heating.
- a contact material for the bonding process is formed in each groove.
- the contact material can be tin, silver, or AuSn alloy, etc., so that the micro light-emitting diode and the driving electrode can be subsequently bonded.
- the micro light emitting diode falls into the corresponding groove. At this time, the micro light emitting diode is only fixed in the groove by magnetic attraction, and the first lead electrode and the driving electrode in the micro light emitting diode are not fixedly connected .
- step S305 the mother board is placed in a closed space, and nitrogen or other inert gas is introduced to keep the chamber pressure at least 3 standard atmospheric pressures to prevent the suspension from boiling during welding, resulting in micro-light emitting diodes in the groove The location of has moved.
- step S305 the mother board is removed from the suspension, which can avoid the movement of the micro light-emitting diodes in the groove due to the flow of the suspension during the removal.
- the acoustic wave excitation structure generates surface acoustic waves under the control of the driving signal, and the standing wave effect of the generated surface acoustic waves in the fluid can control the accurate landing of the micro light emitting diodes.
- the motherboard provided by the embodiments of the present disclosure can realize the massive transfer of micro light-emitting diodes, the manufacturing process is simple and efficient, and the process cost can be effectively reduced.
- the massive transfer of micro-light-emitting diodes can be realized only by depositing piezoelectric films and acoustic wave excitation devices. The process is simple and effective, and the process cost can be effectively reduced.
- the motherboard provided by the embodiments of the present disclosure can adjust the surface acoustic wave simply by adjusting the interval and period of the interdigital electrodes, and then adjust the position of the micro light emitting diode on the motherboard. And the spacing, the massive transfer of higher precision micro light emitting diodes is realized, and the process cost is low.
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Abstract
Description
Claims (15)
- 一种母板,包括:A motherboard, including:衬底基板,位于所述衬底基板之上的多个目标区域,以及压电薄膜和声波激励结构;其中,A base substrate, a plurality of target areas located on the base substrate, a piezoelectric film and an acoustic wave excitation structure; wherein,所述声波激励结构位于除所述多个目标区域以外的区域,并与所述压电薄膜接触,所述声波激励结构用于在驱动信号的控制下产生表面声波;The acoustic wave excitation structure is located in an area other than the multiple target areas and is in contact with the piezoelectric film, and the acoustic wave excitation structure is used to generate surface acoustic waves under the control of a driving signal;每个所述目标区域包括:位于所述衬底基板上的绝缘层,以及位于所述绝缘层远离所述衬底基板一侧的用于容置微发光二极管的多个凹槽;以及Each of the target areas includes: an insulating layer on the base substrate, and a plurality of grooves for accommodating micro light-emitting diodes on the side of the insulating layer away from the base substrate; and所述压电薄膜位于除各所述所述凹槽以外的区域,每一个所述凹槽内具有驱动电极和第一磁性结构。The piezoelectric film is located in an area other than each of the grooves, and each of the grooves has a driving electrode and a first magnetic structure.
- 如权利要求1所述的母板,其中,所述多个目标区域呈阵列排布;3. The motherboard of claim 1, wherein the plurality of target areas are arranged in an array;所述声波激励结构包括:沿列方向延伸且沿行方向排列的多个第一叉指电极;The acoustic wave excitation structure includes: a plurality of first interdigital electrodes extending in a column direction and arranged in a row direction;在行方向相邻的两个第一叉指电极之间具有所述多个目标区域中的至少一个。At least one of the plurality of target regions is provided between two adjacent first interdigital electrodes in the row direction.
- 如权利要求1或2所述的母板,其中,所述多个目标区域中在行方向上相邻的两个凹槽之间的距离L 1满足以下关系: 3. The motherboard of claim 1 or 2, wherein the distance L 1 between two adjacent grooves in the row direction in the plurality of target regions satisfies the following relationship:L 1=m*(a 1+b 1); L 1 =m*(a 1 +b 1 );其中,a 1为所述第一叉指电极的叉指宽度,b 1为所述第一叉指电极的指间距,m为大于零的整数。 Wherein, a 1 is the interdigital width of the first interdigital electrode, b 1 is the interdigital distance of the first interdigital electrode, and m is an integer greater than zero.
- 如权利要求1-3任一项所述的母板,其中,所述多个目标区域呈阵列排布;3. The motherboard of any one of claims 1-3, wherein the multiple target areas are arranged in an array;所述声波激励结构包括:沿列方向延伸且沿行方向排列的多个第一叉指电极,以及沿行方向延伸且沿列方向排列的多个第二叉指电极;The acoustic wave excitation structure includes: a plurality of first interdigital electrodes extending in a column direction and arranged in a row direction, and a plurality of second interdigital electrodes extending in a row direction and arranged in a column direction;其中,在行方向相邻的两个第一叉指电极之间具有至少一个所述目标区 域,以及在列方向相邻的两个第二叉指电极之间具有至少一个所述目标区域。Wherein, there is at least one target area between two adjacent first interdigital electrodes in the row direction, and at least one said target area between two adjacent second interdigital electrodes in the column direction.
- 如权利要求4所述的母板,其中,所述第一叉指电极包括:沿列方向延伸且沿列方向排列的至少两个第一子叉指电极;和/或,8. The motherboard of claim 4, wherein the first interdigital electrode comprises: at least two first sub-interdigital electrodes extending in the column direction and arranged in the column direction; and/or,所述第二叉指电极包括:沿行方向延伸且沿行方向排列的至少两个第二子叉指电极。The second interdigital electrode includes: at least two second sub-interdigital electrodes extending in the row direction and arranged in the row direction.
- 如权利要求4或5所述的母板,其中,每个目标区域中在行方向上相邻的两个凹槽之间的距离L 1,以及列方向上相邻的两个凹槽之间的距离L 2满足以下关系: The motherboard according to claim 4 or 5, wherein the distance L 1 between two adjacent grooves in the row direction in each target area, and the distance between two adjacent grooves in the column direction The distance L 2 satisfies the following relationship:L 1=m*(a 1+b 1);L 2=n*(a 2+b 2); L 1 =m*(a 1 +b 1 ); L 2 =n*(a 2 +b 2 );其中,a 1为所述第一叉指电极的叉指宽度,b 1为所述第一叉指电极的指间距;a 2为所述第二叉指电极的叉指宽度,以及b 2为所述第二叉指电极的指间距,m和n为大于零的整数。 Where a 1 is the interdigital width of the first interdigital electrode, b 1 is the interdigital distance of the first interdigital electrode; a 2 is the interdigital width of the second interdigital electrode, and b 2 is For the finger spacing of the second interdigital electrode, m and n are integers greater than zero.
- 如权利要求1~6任一项所述的母板,其中,所述第一磁性结构位于所述驱动电极背离衬底基板的一侧;以及8. The motherboard of any one of claims 1 to 6, wherein the first magnetic structure is located on a side of the driving electrode away from the base substrate; and所述第一磁性结构在所述衬底基板上的正投影位于同一所述凹槽内的所述驱动电极在所述衬底基板上的正投影的范围内。The orthographic projection of the first magnetic structure on the base substrate is located within the range of the orthographic projection of the drive electrodes in the same groove on the base substrate.
- 如权利要求1~6任一项所述的母板,还包括:位于所述凹槽内的微发光二极管;8. The motherboard according to any one of claims 1 to 6, further comprising: a micro light emitting diode located in the groove;所述微发光二极管包括:位于同一侧的第一引出电极和与所述第一磁性结构磁性相反的第二磁性结构,以及位于另一侧的与所述第一引出电极相对设置的第二引出电极;The micro-light emitting diode includes: a first extraction electrode on the same side and a second magnetic structure opposite to the first magnetic structure, and a second extraction electrode on the other side opposite to the first extraction electrode. electrode;其中,所述微发光二极管的所述第一引出电极与位于同一个所述凹槽内的所述驱动电极电连接。Wherein, the first lead electrode of the micro light emitting diode is electrically connected to the driving electrode located in the same groove.
- 一种显示面板,包括:衬底基板,位于所述衬底基板上的绝缘层,以及位于所述绝缘层远离所述衬底基板一侧的压电薄膜;A display panel includes: a base substrate, an insulating layer on the base substrate, and a piezoelectric film on the side of the insulating layer away from the base substrate;其中,所述绝缘层远离所述衬底基板的一侧具有多个凹槽;每一个所述凹槽内具有驱动电极和第一磁性结构,以及位于所述第一磁性结构远离衬底基板一侧的微发光二极管;Wherein, the insulating layer has a plurality of grooves on one side away from the base substrate; each of the grooves has a driving electrode and a first magnetic structure, and is located one side away from the base substrate. Micro LED on the side;所述微发光二极管包括:位于同一侧的第一引出电极和与所述第一磁性结构磁性相反的第二磁性结构,以及位于另一侧的与所述第一引出电极相对设置的第二引出电极;The micro-light emitting diode includes: a first extraction electrode on the same side and a second magnetic structure opposite to the first magnetic structure, and a second extraction electrode on the other side opposite to the first extraction electrode. electrode;其中,所述微发光二极管的所述第一引出电极位于同一个所述凹槽内的所述驱动电极电连接。Wherein, the first lead-out electrode of the micro light-emitting diode is electrically connected to the driving electrode in the same groove.
- 如权利要求9所述的显示面板,其中,所述微发光二极管的所述第一引出电极与所述驱动电极通过接触材料绑定连接。9. The display panel of claim 9, wherein the first lead-out electrode of the micro light-emitting diode and the driving electrode are bonded and connected by a contact material.
- 一种显示面板的制作方法,包括:A manufacturing method of a display panel includes:提供悬浮有多个微发光二极管的悬浮液;每个所述微发光二极管包括:分别位于两侧的两个引出电极,以及位于一侧的且与第一磁性结构磁性相反的第二磁性结构;Providing a suspension in which a plurality of micro-light-emitting diodes are suspended; each of the micro-light-emitting diodes includes: two extraction electrodes on two sides, and a second magnetic structure on one side that is magnetically opposite to the first magnetic structure;将权利要求1~7任一项所述的母板浸泡在所述悬浮液中;Immersing the mother board according to any one of claims 1 to 7 in the suspension;向所述声波激励结构施加驱动信号以产生表面声波,以使多个所述微发光二极管分别落入到所述多个目标区域中的多个凹槽内;Applying a driving signal to the acoustic wave excitation structure to generate a surface acoustic wave, so that the plurality of micro light-emitting diodes respectively fall into the plurality of grooves in the plurality of target regions;对每个凹槽内的所述微发光二极管进行固定;以及Fixing the micro light emitting diode in each groove; and对所述母板进行切割,以得到多个显示面板。The motherboard is cut to obtain multiple display panels.
- 如权利要求11所述的制作方法,还包括:将所述母板浸泡在所述悬浮液中之前,11. The manufacturing method of claim 11, further comprising: before immersing the mother board in the suspension,在所述母板中的每个凹槽内形成用于绑定工艺的接触材料;以及Forming a contact material for the bonding process in each groove in the motherboard; and采用加热的方式将各所述微发光二极管与对应的凹槽内的驱动电极进行绑定。The micro light-emitting diodes are bound to the driving electrodes in the corresponding grooves by heating.
- 根据权利要求12所述的方法,还包括:向所述声波激励结构施加驱动信号以产生表面声波,使所述微发光二极管在表面声波的控制下移动到表 面声波的波节位置处,其中,所述母板上的所述多个凹槽分别位于各波节的位置,并且在所述第一磁性结构和所述第二磁性结构之间的磁性引力的作用下,使所述微发光二极管的第一引出电极的一侧朝向所述衬底基板落入到所述凹槽中。The method according to claim 12, further comprising: applying a driving signal to the acoustic wave excitation structure to generate a surface acoustic wave, so that the micro light-emitting diode moves to a node position of the surface acoustic wave under the control of the surface acoustic wave, wherein, The plurality of grooves on the motherboard are respectively located at the positions of each node, and under the action of the magnetic attraction between the first magnetic structure and the second magnetic structure, the micro light emitting diode One side of the first extraction electrode faces the base substrate and falls into the groove.
- 根据权利要求13所述的方法,还包括:将所述母板置于密闭空间,通入氮气,使所述密闭空间的气压至少保持3个标准大气压以上。The method according to claim 13, further comprising: placing the mother board in a confined space and venting nitrogen gas so that the air pressure in the confined space is maintained at least 3 standard atmospheres.
- 根据权利要求10-14任一项所述的方法,所述悬浮液包括超纯水,以及其中悬浮的所述多个微发光二极管。The method according to any one of claims 10-14, the suspension comprises ultrapure water, and the plurality of micro light emitting diodes suspended therein.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114242864A (en) * | 2021-12-15 | 2022-03-25 | 厦门天马微电子有限公司 | Micro light-emitting diode, display substrate, manufacturing method of display substrate and display device |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110265424B (en) * | 2019-06-25 | 2022-06-10 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and mother board |
CN110518098B (en) | 2019-09-26 | 2020-12-29 | 京东方科技集团股份有限公司 | Mass transfer method and system for micro light-emitting diode chip |
CN110660712B (en) * | 2019-10-08 | 2021-12-28 | 深圳市思坦科技有限公司 | LED transfer method and device and chip magnetic end forming method |
CN110660337B (en) * | 2019-10-15 | 2021-11-23 | 京东方科技集团股份有限公司 | Backboard, display panel and method for processing bad points of micro light-emitting diodes |
CN110690247A (en) * | 2019-10-16 | 2020-01-14 | 南方科技大学 | Display device and massive transfer method of LED chips |
CN110911437A (en) * | 2019-12-06 | 2020-03-24 | 业成科技(成都)有限公司 | Micro light-emitting diode driving backboard and display panel |
CN111128808B (en) * | 2019-12-30 | 2023-07-21 | 广安市嘉乐电子科技有限公司 | Turnover tool for axial diode packaging process |
CN111725123B (en) * | 2020-05-22 | 2022-12-20 | 深圳市隆利科技股份有限公司 | Method for manufacturing micro light-emitting diode display device |
CN112993134B (en) * | 2020-06-03 | 2022-04-29 | 重庆康佳光电技术研究院有限公司 | Binding method of micro LED, display back plate and display device |
CN111755378B (en) * | 2020-06-30 | 2023-06-27 | 上海天马微电子有限公司 | Transfer substrate, display panel and transfer method |
CN112002792B (en) * | 2020-07-06 | 2022-02-22 | 深圳市隆利科技股份有限公司 | Method for preparing LED display by electrophoretic assembly |
CN112366154A (en) * | 2020-11-06 | 2021-02-12 | 深圳市Tcl高新技术开发有限公司 | Chip transfer method |
CN113488499A (en) * | 2021-06-30 | 2021-10-08 | 上海天马微电子有限公司 | Array substrate and display panel |
CN116312280B (en) * | 2023-05-24 | 2023-08-25 | 惠科股份有限公司 | Lamp panel, manufacturing method of lamp panel and display device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080218299A1 (en) * | 2005-11-28 | 2008-09-11 | David Patrick Arnold | Method and Structure for Magnetically-Directed, Self-Assembly of Three-Dimensional Structures |
CN107425101A (en) * | 2017-07-11 | 2017-12-01 | 华灿光电(浙江)有限公司 | A kind of method of micro-led chip flood tide transfer |
CN108461438A (en) * | 2018-04-03 | 2018-08-28 | 泉州市盛维电子科技有限公司 | A kind of micro-led flood tide transfer device and transfer method |
CN108682312A (en) * | 2018-05-12 | 2018-10-19 | 汕头超声显示器技术有限公司 | A kind of manufacturing method of LED array device |
CN109638122A (en) * | 2018-12-20 | 2019-04-16 | 广东工业大学 | A method of using ultrasonic standing wave manipulation Micro-LED flood tide transfer |
CN110265424A (en) * | 2019-06-25 | 2019-09-20 | 京东方科技集团股份有限公司 | A kind of display panel, its production method and motherboard |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105679929B (en) * | 2016-01-12 | 2017-11-24 | 浙江大学 | The manufacture method and device of cladding piezoelectric unit film based on ultrasonic standing wave field |
-
2019
- 2019-06-25 CN CN201910555373.8A patent/CN110265424B/en active Active
-
2020
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080218299A1 (en) * | 2005-11-28 | 2008-09-11 | David Patrick Arnold | Method and Structure for Magnetically-Directed, Self-Assembly of Three-Dimensional Structures |
CN107425101A (en) * | 2017-07-11 | 2017-12-01 | 华灿光电(浙江)有限公司 | A kind of method of micro-led chip flood tide transfer |
CN108461438A (en) * | 2018-04-03 | 2018-08-28 | 泉州市盛维电子科技有限公司 | A kind of micro-led flood tide transfer device and transfer method |
CN108682312A (en) * | 2018-05-12 | 2018-10-19 | 汕头超声显示器技术有限公司 | A kind of manufacturing method of LED array device |
CN109638122A (en) * | 2018-12-20 | 2019-04-16 | 广东工业大学 | A method of using ultrasonic standing wave manipulation Micro-LED flood tide transfer |
CN110265424A (en) * | 2019-06-25 | 2019-09-20 | 京东方科技集团股份有限公司 | A kind of display panel, its production method and motherboard |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114242864A (en) * | 2021-12-15 | 2022-03-25 | 厦门天马微电子有限公司 | Micro light-emitting diode, display substrate, manufacturing method of display substrate and display device |
CN114242864B (en) * | 2021-12-15 | 2023-11-24 | 厦门天马微电子有限公司 | Micro light emitting diode, display substrate, manufacturing method of display substrate and display device |
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