CN107378231A - The method for preparing metal structure in transparent material surface using metal nano prepared Chinese ink - Google Patents
The method for preparing metal structure in transparent material surface using metal nano prepared Chinese ink Download PDFInfo
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- CN107378231A CN107378231A CN201710718692.7A CN201710718692A CN107378231A CN 107378231 A CN107378231 A CN 107378231A CN 201710718692 A CN201710718692 A CN 201710718692A CN 107378231 A CN107378231 A CN 107378231A
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- metal
- chinese ink
- prepared chinese
- transparency carrier
- metal nano
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/355—Texturing
Abstract
The invention discloses a kind of method for preparing metal structure in transparent material surface using metal nano prepared Chinese ink, transparency carrier is placed in metal nano prepared Chinese ink, substrate is irradiated using laser, by controlling the parameter of laser, the material of prepared Chinese ink and concentration, so that the metal material in metal nano prepared Chinese ink is optionally separated out at the laser spot of substrate surface, metal micro-nanostructure finally is made on transparency carrier surface.This preparation method is directly prepared in the liquid phase, laser can go directly transparency carrier surface, and the metallic particles in metal nano prepared Chinese ink is sintered to the metal level of stable conduction, simplify preparation process, metal oxygenation efficiency is low in preparation process, and the controllable metal level of size is only formed selectively at Laser Focusing, the problem of preventing substrate surface integrally to deposit adsorbing metal particle, save raw material, reduce energy consumption, and then production cost is reduced, there is great market prospects and economic value.
Description
Technical field
The invention belongs to field of laser processing, is related to a kind of laser printing processes, specifically, is related to one kind and utilizes metal
The method that nanometer prepared Chinese ink carries out laser printing to transparent material surface.
Background technology
At present, using the device that transparent material is base material in optics, consumer electronics, biomedical and micro-optoelectronic mechanical system
Etc. being more and more widely applied in technical field.It is a kind of relatively conventional change to prepare metal structure in transparent material surface
Property means, the method for use mainly have：(1) Common deposition method and (2) laser deposition prepare method.In the surface micro-nano of transparent material
In prepared by structure, laser directly writing has the advantage of uniqueness, such as does not need vacuum, can reduce cost and simplification is processed
Journey.
The method that directly or indirectly prepared by laser solid phase at present mainly has following several：Laser transfer method (laser
induced forward transfer)：Laser beam 1 passes through transparency carrier, is radiated at the metal foil of source substrate 2 (transparent material)
On film 3, laser is interacted with thin-film material, and metallic film is transferred to because the effect of laser is peeled off from source substrate 2
In the target base plate 4 close with source substrate, the source film shifted deposits in target base plate, forms surface metal figure
Shape 5, as shown in Figure 1；Laser direct sintering (laser induced annealing):With laser direct sintering transparency carrier 6
The metallic solution film 7 of the drying of upper setting, using laser energy local irradiation, the metallic solution film 7 of transparency carrier 6 or drying
In metalloform-selective absorb energy, laser can activate substrate surface, or metal ion is quickly restored
Source substrate surface is deposited on, forms surface metal figure 5, as shown in Figure 2.Both the above method is required for preparing " precursor ",
In method prepared by laser liquid phase, pregnant solution is exactly the precursor of metal level.But in existing two methods, laser turns
It is complex preparation process to be present in shifting method, the problem of low production efficiency, conventional laser direct sintering then exist oxygenation efficiency it is high,
The step of needing increase to dry, so as to cause, raw material loss is big, energy consumption is big, cost is high.
The content of the invention
Therefore, the present invention is exactly to solve above-mentioned technical problem, so as to propose a kind of production efficiency is high, spillage of material is low,
The method that energy consumption is low, economy easily carries out laser printing using metal nano prepared Chinese ink to transparent material surface.
In order to solve the above technical problems, the technical scheme is that：
The present invention provides a kind of method for preparing metal structure in transparent material surface using metal nano prepared Chinese ink, the side
Method comprises the following steps：
A, metal nano prepared Chinese ink is taken；
B, transparency carrier is taken, is placed in metal nano prepared Chinese ink；
Laser processing parameter and focal position are set, laser beam is irradiated to institute's transparency carrier surface c,；
D, metal prepared Chinese ink separates out under laser action at laser spot and selective sintering is in substrate surface；
E, laser parameter is controlled to obtain required metal micro-nanostructure in substrate surface.
Preferably, the solute of the metal nano prepared Chinese ink is the nano particle of metal or alloy, said metal nano-ink
The solvent of juice is water or alcohol organic solvent, and the mass concentration of the metal nano prepared Chinese ink is 10-90%.
Preferably, in the step c, the parameter of Laser Processing is：Optical maser wavelength is 355nm, 532nm, 1064nm；Work(
Rate is 0.1-100W；Frequency is 1Hz-1MHz.
Preferably, in the step b, the transparency carrier is immersed in the metal nano prepared Chinese ink or floated on metal
Nanometer prepared Chinese ink surface.
Preferably, when the transparency carrier is immersed in the metal nano prepared Chinese ink, control laser parameter makes laser
Beam is irradiated in transparency carrier top surface through the metal nano prepared Chinese ink at the top of transparency carrier, and metal nano prepared Chinese ink is in transparency carrier top surface
Laser spot at Selective separation-out, be made metal micro-nanostructure；Or control laser parameter makes laser beam pass through transparency carrier
The metal nano prepared Chinese ink and transparency carrier at top, irradiate in transparency carrier bottom surface, metal nano prepared Chinese ink is in transparency carrier bottom surface
Selective separation-out at laser spot, metal micro-nanostructure is made.
Preferably, when the transparency carrier floats on the metal nano prepared Chinese ink surface, control laser parameter makes laser
Beam passes through the transparency carrier, irradiates in transparency carrier bottom surface, metal nano prepared Chinese ink is at the laser spot of transparency carrier bottom surface
Selective separation-out, metal micro-nanostructure is made.
Preferably, the metal micro-nanostructure is three-dimensional structure, its size is micron, Nano grade.
Preferably, the transparency carrier is low melting point polymer transparency carrier, glass substrate, sapphire substrate or compound
Substrate.
Preferably, the metal is aluminium, copper, gold or silver.
The above-mentioned technical proposal of the present invention has advantages below compared with prior art：
(1) method of the present invention for preparing metal structure in transparent material surface using metal nano prepared Chinese ink, will be saturating
Bright substrate is placed in metal nano prepared Chinese ink, substrate is irradiated using laser, by controlling the parameter of laser, the material of prepared Chinese ink and dense
Degree, so that the metal material in metal nano prepared Chinese ink is optionally separated out at the laser spot of substrate surface, so as to saturating
Metal micro-nanostructure is made in bright substrate surface.This preparation method is directly prepared in the liquid phase, and laser can go directly transparency carrier table
Face, and the metallic particles in metal nano prepared Chinese ink is sintered to the metal level of stable conduction, technique is simple, simplifies and prepared
Journey, because process is carried out in metal nano prepared Chinese ink, so metal oxygenation efficiency is low in preparation process, and only in laser
The controllable metal level of size is formed selectively at focusing, it is therefore prevented that substrate surface integrally deposits asking for adsorbing metal particle
Topic, saves raw material, reduces energy consumption, and then reduces production cost, has great market prospects and economic value.
(2) method of the present invention for preparing metal structure in transparent material surface using metal nano prepared Chinese ink, can root
According to the power to laser absorption of metal nano prepared Chinese ink, transparency carrier is immersed in inside metal nano prepared Chinese ink or makes transparent base
Plate floats on metal nano prepared Chinese ink surface, by adjusting laser parameter, laser beam is penetrated metal nano prepared Chinese ink solution and irradiates in saturating
Bright substrate top surface makes that laser beam penetrates prepared Chinese ink at the top of transparency carrier and transparency carrier is irradiated in substrate bottom surface, or makes laser
Beam is irradiated in transparency carrier bottom surface through transparency carrier, passes through this set and regulation so that this method is a variety of available for processing
Metalloid prepared Chinese ink, make the application of this method wider, for preparing different metal nano micro-nano structures, by using this two
The different processing mode of kind, without changing process equipment, reduce further production cost.
Brief description of the drawings
In order that present disclosure is more likely to be clearly understood, specific embodiment and combination below according to the present invention
Accompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1 is the preparation process schematic diagram of laser transfer method in the prior art；
Fig. 2 is the preparation process schematic diagram of laser direct sintering in the prior art；
Fig. 3 is the schematic diagram of the method described in the embodiment of the present invention 1；
Fig. 4 is the schematic diagram of the method described in the embodiment of the present invention 2；
Fig. 5 is the schematic diagram of the method described in the embodiment of the present invention 3.
Reference is expressed as in figure：1- laser beams；2- sources substrate；3- metallic films；4- target base plates, 5- surface metals
Figure；6- transparency carriers；7- metallic solution films；8- metal nano prepared Chinese ink；9- metal micro-nanostructures.
Embodiment
Embodiment 1
A kind of method for preparing metal structure in transparent material surface using metal nano prepared Chinese ink is present embodiments provided, such as
Shown in Fig. 3, methods described comprises the following steps：
A, metal nano prepared Chinese ink 8 is taken, the solute of the metal nano prepared Chinese ink 8 is metal silver nano-grain, and solvent is alcohols
Organic solvent, it is ethanol in the present embodiment, the mass concentration of the metal nano prepared Chinese ink is 70%.
B, transparency carrier 6 is taken, the transparency carrier 6 is low melting point transparent polymer substrate, is placed on metal nano
In prepared Chinese ink 8, and metal nano prepared Chinese ink 8 is set to submerge the transparency carrier 6；
Laser processing parameter and focal position are set, laser beam 1 is penetrated the metal nano prepared Chinese ink at the top of transparency carrier 6 c,
8 are irradiated to the top surface of institute's transparency carrier 6, and laser described in the present embodiment is the short-pulse laser that wavelength is 355nm, and its power is
0.1W, frequency 1Hz；
D, analysis metal nanoparticle goes out metal nano prepared Chinese ink at laser spot under laser action and selective sintering exists
The upper surface of transparency carrier 6；
E, metal micro-nanostructure 9 (metal film) layer of size required for control laser parameter obtains on the surface of transparency carrier 6,
The metal micro-nanostructure 9 is that size is micro-nano rank, such as diameter 800nm, high 1 μm of cylindrical structural.
Embodiment 2
A kind of method for preparing metal structure in transparent material surface using metal nano prepared Chinese ink is present embodiments provided, such as
Shown in Fig. 4, methods described comprises the following steps：
A, metal nano prepared Chinese ink 8 is taken, the solute of the metal nano prepared Chinese ink 8 is magnesium alloy nano particle, and solvent is water, institute
The mass concentration for stating metal nano prepared Chinese ink 8 is 50%；
B, transparency carrier 6 is taken, the transparency carrier 6 is glass substrate, is placed in metal nano prepared Chinese ink 8, and make
Transparency carrier 6 floats on the surface of metal nano prepared Chinese ink 8；
Laser processing parameter and focal position are set, laser beam 1 is penetrated transparency carrier 6, be irradiated to institute's transparency carrier 6 c,
Bottom surface, the power of the laser is 1W, frequency 1MHz, and laser described in the present embodiment is that wavelength is the ultrashort of 532nm
Pulse laser；
D, metal nano prepared Chinese ink 8 is analysed under laser action at laser spot and selective sintering is under transparency carrier 6
Surface；
E, the metal micro-nanostructure 9 of size, the metal are micro- required for control laser parameter obtains on the surface of transparency carrier 6
Micro-nano structure 9 is the cube structure that size is 200*500*1000nm.
Embodiment 3
A kind of method for preparing metal structure in transparent material surface using metal nano prepared Chinese ink is present embodiments provided, such as
Shown in Fig. 4, methods described comprises the following steps：
A, metal nano prepared Chinese ink 8 is taken, the solute of the metal nano prepared Chinese ink 8 is metal aluminum nanoparticles, and solvent is alcohols
Organic solution, it is ethylene glycol in the present embodiment, the concentration of the metal nano prepared Chinese ink 8 is 15%；
B, transparency carrier 6 is taken, the transparency carrier 6 is sapphire substrate, is placed in metal nano prepared Chinese ink 8, and
Metal nano prepared Chinese ink 8 is set to submerge the transparency carrier 6；
Laser processing parameter and focal position are set, laser beam 1 is penetrated the metal prepared Chinese ink irradiation of the top of transparency carrier 6 c,
To the upper surface of institute's transparency carrier 6, laser described in the present embodiment is the continuous laser that wavelength is 1064nm, and its power is 5W,
Frequency is 500Hz；
D, metal nano prepared Chinese ink 8 separates out under laser action at laser spot and selective sintering is in transparency carrier 6
Upper surface；
E, the metal micro-nanostructure 9 of size, the gold required for control laser parameter obtains in the lower surface of transparency carrier 6
Category micro-nano structure 9 is the metal film that thickness is 2 μm.
Obviously, above-described embodiment is only intended to clearly illustrate example, and is not the restriction to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or
Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or
Among changing still in the protection domain of the invention.
Claims (9)
- A kind of 1. method for preparing metal structure in transparent material surface using metal nano prepared Chinese ink, it is characterised in that the side Method comprises the following steps：A, metal nano prepared Chinese ink is taken；B, transparency carrier is taken, is placed in metal nano prepared Chinese ink；Laser processing parameter and focal position are set, laser beam is irradiated to institute's transparency carrier surface c,；D, metal prepared Chinese ink separates out under laser action at laser spot and selective sintering is in substrate surface；E, laser parameter is controlled to obtain required metal micro-nanostructure in substrate surface.
- 2. the method according to claim 1 for preparing metal structure in transparent material surface using metal nano prepared Chinese ink, its It is characterised by, the solute of the metal nano prepared Chinese ink is the nano particle of metal or alloy, the solvent of said metal nanometer prepared Chinese ink For water or alcohol organic solvent, the mass concentration of the metal nano prepared Chinese ink is 10-90%.
- 3. the method according to claim 2 for preparing metal structure in transparent material surface using metal nano prepared Chinese ink, its It is characterised by, in the step c, the parameter of Laser Processing is：Optical maser wavelength is 355nm, 532nm, 1064nm；Power is 0.1- 100W；Frequency is 1Hz-1MHz.
- 4. the method according to claim 3 for preparing metal structure in transparent material surface using metal nano prepared Chinese ink, its It is characterised by, in the step b, the transparency carrier is immersed in the metal nano prepared Chinese ink or floated on metal nano prepared Chinese ink Surface.
- 5. the method according to claim 4 for preparing metal structure in transparent material surface using metal nano prepared Chinese ink, its It is characterised by, when the transparency carrier is immersed in the metal nano prepared Chinese ink, control laser parameter makes laser beam through thoroughly Metal nano prepared Chinese ink at the top of bright substrate irradiates burnt in the laser of transparency carrier top surface in transparency carrier top surface, metal nano prepared Chinese ink Selective separation-out at point, metal micro-nanostructure is made；Or control laser parameter makes laser beam through the gold at the top of transparency carrier Belong to nanometer prepared Chinese ink and transparency carrier, irradiate in transparency carrier bottom surface, laser spot of the metal nano prepared Chinese ink in transparency carrier bottom surface Locate Selective separation-out, metal micro-nanostructure is made.
- 6. the method according to claim 4 for preparing metal structure in transparent material surface using metal nano prepared Chinese ink, its It is characterised by, when the transparency carrier floats on the metal nano prepared Chinese ink surface, control laser parameter makes laser beam pass through institute Transparency carrier is stated, is irradiated in transparency carrier bottom surface, the selectivity analysis at the laser spot of transparency carrier bottom surface of metal nano prepared Chinese ink Go out, metal micro-nanostructure is made.
- 7. the method for preparing metal structure in transparent material surface using metal nano prepared Chinese ink according to claim 5 or 6, Characterized in that, the metal micro-nanostructure is three-dimensional structure, its size is micron, Nano grade.
- 8. the method according to claim 7 for preparing metal structure in transparent material surface using metal nano prepared Chinese ink, its It is characterised by, the transparency carrier is low melting point polymer transparency carrier, glass substrate, sapphire substrate or composite base plate.
- 9. the method according to claim 8 for preparing metal structure in transparent material surface using metal nano prepared Chinese ink, its It is characterised by, the metal is aluminium, copper, gold or silver.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710718692.7A CN107378231B (en) | 2017-08-21 | 2017-08-21 | The method for preparing metal structure in transparent material surface using metal nano prepared Chinese ink |
| PCT/CN2017/106249 WO2019037213A1 (en) | 2017-08-21 | 2017-10-16 | Method for preparing metal structure on surface of transparent material by using metal nanoparticle ink |
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| CN201710718692.7A CN107378231B (en) | 2017-08-21 | 2017-08-21 | The method for preparing metal structure in transparent material surface using metal nano prepared Chinese ink |
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| CN107378231B CN107378231B (en) | 2019-06-07 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112024877A (en) * | 2020-09-08 | 2020-12-04 | 常州英诺激光科技有限公司 | Method for improving surface quality of 3D printing micro-channel part |
| CN113005433A (en) * | 2019-12-20 | 2021-06-22 | 香港中文大学 | Method for depositing a photo-induced material and corresponding device |
| CN114160975A (en) * | 2021-12-30 | 2022-03-11 | 中南大学 | Large-area high-strength laser welding method and device for dissimilar materials |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013001108A (en) * | 2011-06-13 | 2013-01-07 | Dynic Corp | Copy protection laminated material |
| CN103407296A (en) * | 2013-07-29 | 2013-11-27 | 南京鼎科纳米技术研究所有限公司 | Method for achieving high-melting-point material 3D printing through nanometer ink together with laser melting |
| CN103455179A (en) * | 2012-05-28 | 2013-12-18 | 东元奈米应材股份有限公司 | High-resolution laser etching method for transparent conducting layer of touch panel |
| CN103996454A (en) * | 2014-04-30 | 2014-08-20 | 天津宝兴威科技有限公司 | Manufacturing method for nanometal grid transparent conductive substrate |
| CN104750311A (en) * | 2015-03-16 | 2015-07-01 | 深圳市宇顺电子股份有限公司 | Manufacturing method of metal mesh conducting film, metal mesh conducting film and touch panel |
| CN106328252A (en) * | 2016-10-24 | 2017-01-11 | 昆山峰实电子科技有限公司 | Silver nanowire conducting transparent film and manufacture method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007037079A1 (en) * | 2006-10-25 | 2008-04-30 | Bayer Materialscience Ag | Formulation for use in generation of electrical conductive or optical coatings, comprises silver metal particles, solvent, dispersion agent and additives |
| TWI505894B (en) * | 2011-11-24 | 2015-11-01 | Mitsuboshi Diamond Ind Co Ltd | Laser process method and laser process device |
| CN102787333B (en) * | 2012-08-22 | 2015-02-04 | 江苏大学 | Manufacturing method and device for fibre laser and electrochemical complex nanosecond pulse deposition |
| US9499909B2 (en) * | 2013-03-15 | 2016-11-22 | Applied Materials, Inc. | Methods for photo-excitation of precursors in epitaxial processes using a rotary scanning unit |
| CN204078424U (en) * | 2014-09-12 | 2015-01-07 | 广西容县风采印业有限公司 | A kind of plastic flexible package goods using laser index carving printing ink layer |
| JP6956489B2 (en) * | 2016-02-05 | 2021-11-02 | 一般財団法人ファインセラミックスセンター | Sintering method and manufacturing method of sintered product |
-
2017
- 2017-08-21 CN CN201710718692.7A patent/CN107378231B/en active Active
- 2017-10-16 WO PCT/CN2017/106249 patent/WO2019037213A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013001108A (en) * | 2011-06-13 | 2013-01-07 | Dynic Corp | Copy protection laminated material |
| CN103455179A (en) * | 2012-05-28 | 2013-12-18 | 东元奈米应材股份有限公司 | High-resolution laser etching method for transparent conducting layer of touch panel |
| CN103407296A (en) * | 2013-07-29 | 2013-11-27 | 南京鼎科纳米技术研究所有限公司 | Method for achieving high-melting-point material 3D printing through nanometer ink together with laser melting |
| CN103996454A (en) * | 2014-04-30 | 2014-08-20 | 天津宝兴威科技有限公司 | Manufacturing method for nanometal grid transparent conductive substrate |
| CN104750311A (en) * | 2015-03-16 | 2015-07-01 | 深圳市宇顺电子股份有限公司 | Manufacturing method of metal mesh conducting film, metal mesh conducting film and touch panel |
| CN106328252A (en) * | 2016-10-24 | 2017-01-11 | 昆山峰实电子科技有限公司 | Silver nanowire conducting transparent film and manufacture method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113005433A (en) * | 2019-12-20 | 2021-06-22 | 香港中文大学 | Method for depositing a photo-induced material and corresponding device |
| CN113005433B (en) * | 2019-12-20 | 2024-02-13 | 香港中文大学 | Method for depositing a photo-induced material and corresponding device |
| CN112024877A (en) * | 2020-09-08 | 2020-12-04 | 常州英诺激光科技有限公司 | Method for improving surface quality of 3D printing micro-channel part |
| CN112024877B (en) * | 2020-09-08 | 2022-05-03 | 常州英诺激光科技有限公司 | Method for improving surface quality of 3D printing micro-channel part |
| CN114160975A (en) * | 2021-12-30 | 2022-03-11 | 中南大学 | Large-area high-strength laser welding method and device for dissimilar materials |
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| Publication number | Publication date |
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| WO2019037213A1 (en) | 2019-02-28 |
| CN107378231B (en) | 2019-06-07 |
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