CN107346049A - A kind of Optical Waveguide Modes spot-size converter and preparation method thereof - Google Patents
A kind of Optical Waveguide Modes spot-size converter and preparation method thereof Download PDFInfo
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- CN107346049A CN107346049A CN201710669541.7A CN201710669541A CN107346049A CN 107346049 A CN107346049 A CN 107346049A CN 201710669541 A CN201710669541 A CN 201710669541A CN 107346049 A CN107346049 A CN 107346049A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
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- Optical Integrated Circuits (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The invention discloses a kind of Optical Waveguide Modes spot-size converter and preparation method thereof, employ integrated micro process, on insulator layer in silicon base, make silicon waveguide and tapered fiber waveguide, again after tapered fiber waveguide tip, deep etching is carried out to silica buried layer and silicon substrate, redeposited silica afterwards, and chemically-mechanicapolish polished, the deposited silicon nitride layer in obtained planar base structure again, and silicon nitride layer is etched into the tapered fiber waveguide of combination, finally deposit the making that silica top covering realizes spot-size converter.The present invention can realize that silicon nano optical wave guide directly carries out end face with general single mode fiber and is connected, without using tapered lens fiber, reduce light from general single mode fiber into waveguide communication process from the radiation loss of silicon substrate, improve and single-mode fiber mode spot matching degree, the coupling efficiency of light is improved, is easy to extensive light path to integrate.
Description
Technical field
The present invention relates to optic communication and light network technical field, and in particular to a kind of Optical Waveguide Modes spot-size converter and its making
Method, for solving the interface problem of silicon based photon chip and optical fiber.
Background technology
With the fast development of the communication technology, under the background in big data epoch, data traffic sharp increase, to bandwidth
It is required that it is increasing, and traditional electrical interconnection is also more and more prominent in the limitation of bandwidth, distance, energy consumption etc., it is difficult
To meet the growth requirement of high-speed communication and high-performance microelectronics chip.In recent years, with emerging silicon based photon integrated chip
Technology constantly develops rapidly, realizes that the short distance light network such as chip and chip chamber turns into using large-scale integrated photon chip
May.
Because silicon based photon device has, big bandwidth compatible with CMOS technology, low latency, low energy
The advantages of consumption, low crosstalk etc. are notable, it is possible to achieve high-performance, low cost, small size, optical interconnection on highly integrated piece.And for
For silicon based photon chip, a urgent problem to be solved is realize optical signal outside the optical signal and piece in chip slapper efficient
It is of coupled connections.Because silicon and silica or air have very big refringence, silicon substrate fiber waveguide has very strong limitation
The ability of light field, the usual very little of size of silicon substrate fiber waveguide, its sectional dimension is less than 0.5 micron, and the core of general single mode fiber
Footpath is about 8-10 microns, and both differ greatly at size, cause serious model field unbalance, so as to cause very big coupling loss.
In order to realize the efficient coupling of the waveguide of optical fiber and small size, it would be desirable to certain moduli spot-size converter is designed on chip,
To realize that mould field matches, coupling efficiency is improved.
Spot-size converter has end coupling and grating coupling two ways.Grating coupling is by making light in silicon waveguide
Grid structure, when light incides grating coupler surface from optical fiber, because Bragg diffraction effect is realized with being put above chip
Optical fiber effectively coupled.This mode can improve the alignment tolerance of optical fiber and coupler, but coupling efficiency it is relatively low and
Wavelength sensitive, it is unfavorable for encapsulating, is used to test chip more.And end coupling causes optical signal directly in the transversal of silica-based waveguides
Face and the cross section of optical fiber are directly coupled.The advantages of end coupling device, is that coupling efficiency is higher, and can not change
It is aligned in the case of light path.
Therefore, design that a kind of packaging technology is simple, the high silicon substrate spot-size converter of coupling efficiency is extremely important and intentional
Justice.
The content of the invention
1st, goal of the invention.
The invention reside in solving to be conventionally used to the mould spot transformational structure of end coupling, solution need to use tapered lens fiber and
The problem of coupling efficiency is relatively low, there is provided a kind of Optical Waveguide Modes spot-size converter that directly can be docked with general single mode fiber, and its
Preparation method.
2nd, the technical solution adopted in the present invention.
A kind of Optical Waveguide Modes spot-size converter proposed by the present invention, including：Top covering, intermediate cladding layer, insulator layer, substrate,
First fiber waveguide and the second fiber waveguide, described insulator layer are placed on the substrate, are set gradually on described insulator layer
Intermediate cladding layer, top covering；First fiber waveguide is placed between intermediate cladding layer and the insulator layer, and second fiber waveguide is put
Between the top covering and the intermediate cladding layer；Described the first fiber waveguide and the second fiber waveguide is oppositely arranged, the first light wave
It is tapered to lead the side relative with the second fiber waveguide；The second described fiber waveguide is with the opposite side of the first fiber waveguide also to be tapered
Hold, the mould field in its sophisticated mould field and single-mode fiber matches；Described the first fiber waveguide it is opposite with the second fiber waveguide one
Side is rectangle.
Further, the described tapered tip of the first fiber waveguide is not provided with setting groove on the substrate of the first fiber waveguide, leads to
Cross after intermediate cladding layer is filled into plane and make the second fiber waveguide.
Further, the top covering thickness is between 10-25um.
Further, the first fiber waveguide thickness is in below 500nm.
Further, the intermediate cladding layer thickness is in below 500nm.
Further, the second fiber waveguide thickness is in below 600nm.
Further, the insulator layer thickness is between 1-5um.
Further, the depth of groove is between 10-15um.
Further, first fiber waveguide is silicon.
Further, second fiber waveguide is silicon nitride.
Further, the top covering is silica.
Further, the intermediate cladding layer is silica.
Further, the insulator layer is silica.
Further, the substrate is silicon.
The preparation method of above-mentioned spot-size converter, including step：
(1) in the silicon base on insulator layer, collected using beamwriter lithography or deep UV lithography and dry etching etc.
The first fiber waveguide is made into microelectronic technique；
(2) after the tip of the first fiber waveguide, collected using beamwriter lithography or deep UV lithography and dry etching etc.
Groove is made into microelectronic technique；
(3) depositing inter-layer silica is filled to groove, and uses cmp method, to whole chip
It is planarized, and controls the thickness of intermediate layer silica；
(4) one layer of silicon nitride is being deposited obtained by step (3) on chip；
(5) the integrated micro technique such as beamwriter lithography or deep UV lithography and dry etching is used, in silicon nitride layer
The second fiber waveguide of upper making；
(6) top covering silica is being deposited obtained by step (5) on chip.
3rd, technique effect caused by the present invention.
(1) present invention is by using twin-guide tapered structure so that Optical Waveguide Modes spot-size converter can be with general single mode light
It is fine directly to carry out end face connection, without using the tapered lens fiber of tradition.
(2) present invention reduces light from general single mode fiber into waveguide communication process from the radiation loss of silicon substrate, carry
It is high with single-mode fiber mode spot matching degree, improve the coupling efficiency of light, be easy to extensive light path to integrate.
Brief description of the drawings
Fig. 1 is the structural representation of Optical Waveguide Modes spot converter of the present invention.To clearly show that waveguiding structure, wrapped in omission
Layer.
Fig. 2 is preparation method step 1 gained intermediate structure front schematic view of the present invention.
Fig. 3 is preparation method step 1 gained intermediate structure schematic top plan view of the present invention.
Fig. 4 is preparation method step 2 gained intermediate structure front schematic view of the present invention.
Fig. 5 is preparation method step 2 gained intermediate structure schematic top plan view of the present invention.
Fig. 6 is preparation method step 3 gained intermediate structure front schematic view of the present invention.
Fig. 7 is preparation method step 4 gained intermediate structure front schematic view of the present invention.
Fig. 8 is preparation method step 5 gained intermediate structure front schematic view of the present invention.
Fig. 9 is preparation method step 5 gained intermediate structure schematic top plan view of the present invention.
Figure 10 is preparation method step 6 gained Optical Waveguide Modes spot-size converter front schematic view of the present invention.
When Figure 11 is that transverse electric mode light is transmitted in Optical Waveguide Modes spot-size converter of the present invention, optical field distribution top view.
When Figure 12 is that transverse electric mode light is transmitted in Optical Waveguide Modes spot-size converter of the present invention, optical field distribution side view.
When Figure 13 is that E mode light transmits in Optical Waveguide Modes spot-size converter of the present invention, optical field distribution top view.
When Figure 14 is that E mode light transmits in Optical Waveguide Modes spot-size converter of the present invention, optical field distribution side view.
Wherein, 1- top coverings, 2- intermediate cladding layers, 3- insulator layers, 4- substrates, the fiber waveguides of 5- first, the fiber waveguides of 6- second,
7- silicon nitride layers, 8- grooves.
Embodiment
Embodiment 1
Below by the description to embodiment, the shape of for example involved each component of embodiment of the invention, structure
Make, the mutual alignment between each several part and annexation, the effect of each several part and operation principle, manufacturing process and the side of operating with
Method etc., is described in further detail, completeer to help those skilled in the art to have inventive concept of the invention, technical scheme
Whole, accurate and deep understanding.
As shown in figure 1, a kind of Optical Waveguide Modes spot-size converter of the present embodiment, including top covering 1, intermediate cladding layer 2, insulator layer
3rd, substrate 4.In common silicon optical chip, for the thickness of insulator layer 3 generally between 1-5um, the thickness of the first fiber waveguide 5 is usual
In below 500nm.
In Optical Waveguide Modes spot-size converter described in the present embodiment, substrate 4 is silicon, and being made on substrate 4 has insulator layer 3.Absolutely
The surface of edge body layer 3, which makes, the first fiber waveguide 5, and the material of the first fiber waveguide 5 is silicon, includes one section of tapered fiber waveguide, the first light wave
5 are led to be positioned between intermediate cladding layer 2 and insulator layer 3.Second fiber waveguide 6 is including one section of reverse tapered fiber waveguide 6a and one section just
To tapered fiber waveguide 6b.Second fiber waveguide 6 is silicon nitride material, is placed between top covering 1 and intermediate cladding layer 2.
The present embodiment provides a kind of preparation method of above-mentioned Optical Waveguide Modes spot-size converter, comprises the following steps that：
Step 1：In silicon base on insulator layer, using beamwriter lithography or deep UV lithography and dry etching etc.
Integrated micro technique makes the first fiber waveguide.After the completion of the step, its structure is as shown in Figure 2,3.
Step 2：After the tip of the first fiber waveguide, using beamwriter lithography or deep UV lithography and dry etching etc.
Integrated micro technique makes groove.After the completion of the step, its structure is as shown in Figure 4,5.
Step 3：Depositing inter-layer silica is filled to groove, and uses cmp method, to whole
Chip is planarized, and controls the thickness of intermediate layer silica.After the completion of the step, its structure is as shown in Figure 6.
Step 4：One layer of silicon nitride is being deposited obtained by step (3) on chip.After the completion of the step, its structure is as shown in Figure 7.
Step 5：Using the integrated micro technique such as beamwriter lithography or deep UV lithography and dry etching, in silicon nitride
The second fiber waveguide is made on layer.After the completion of the step, its structure is as shown in Figure 8,9.
Step 6：Top covering silica is being deposited obtained by step (5) on chip.After the completion of the step, its structure such as Figure 10
It is shown.
When using the structure of the present invention, light is incident from left side.The mould field and list of reverse tapered fiber waveguide 6a left side tips
Mould field in mode fiber matches, and the light guide lotus root in single-mode fiber can be incorporated into the second fiber waveguide 6.General single mode fiber mould
Diameter in general 10um or so, to avoid light field from being leaked in substrate 4, it is necessary to make exhausted below reverse tapered fiber waveguide 6a
Edge layer thickness can not be too thin.The usual thickness of insulator layer 3 can not meet to require, therefore, below reverse tapered fiber waveguide 6a
Groove 8 is made, depth fills silica between 10-15um.Simultaneously to ensure the up-down symmetry of waveguiding structure, instead
Should be consistent to tapered fiber waveguide 6a upper under-clad layer, therefore the material of top covering 1 is silica in the present invention, thickness exists
Between 10-25um.Width with reverse tapered fiber waveguide 6a gradually increases, and light field is preferably limited in reverse tapered light wave
Lead in 6a, light field diameter also accordingly reduces.When reaching reversely tapered fiber waveguide 6a and positive tapered fiber waveguide 6b intersection, absolutely
The usual thickness of edge body layer 3 can ensure that light field will not be leaked in substrate 4, therefore the edge of groove 8 also is located at this.
Afterwards, positive tapered fiber waveguide 6b width is gradually reduced, while the width of the first fiber waveguide 5 gradually increases, due to coupling, light
Field is transferred in the first fiber waveguide 5.To ensure to have certain coupling strong between positive tapered fiber waveguide 6b and the first fiber waveguide 5
Degree, the thickness of intermediate cladding layer 2 is in below 500nm.The final effect of structure of the present invention is to realize light field from single-mode fiber to silicon ripple
The coupling led
In Figure 11,12, transmission situation of the transverse electric mode light in the Optical Waveguide Modes spot-size converter that the present invention realizes is carried out
Numerical simulation.Light inputs from left side, is emitted from right side silicon waveguide.Transmitting procedure intuitively demonstrates above description.
In Figure 13,14, transmission situation of the E mode light in the Optical Waveguide Modes spot-size converter that the present invention realizes is carried out
Numerical simulation.Light inputs from left side, is emitted from right side silicon waveguide.Transmitting procedure intuitively demonstrates above description.
The present invention is exemplarily described above, it is clear that present invention specific implementation is not subject to the restrictions described above,
As long as employing the improvement of the various unsubstantialities of inventive concept and technical scheme of the present invention progress, or not improved this is sent out
Bright design and technical scheme directly applies to other occasions, within protection scope of the present invention.The protection of the present invention
Scope should be determined by the scope of protection defined in the claims.
Above-described embodiment is the preferable embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any Spirit Essences without departing from the present invention with made under principle change, modification, replacement, combine, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (10)
- A kind of 1. Optical Waveguide Modes spot-size converter, it is characterised in that including：Top covering (1), intermediate cladding layer (2), insulator layer (3), Substrate (4), the first fiber waveguide (5) and the second fiber waveguide (6), described insulator layer (3) is placed on the substrate (4), described Insulator layer (3) on set gradually intermediate cladding layer (2), top covering (1)；First fiber waveguide (5) is placed in intermediate cladding layer (2) Between the insulator layer (3), second fiber waveguide (6) be placed in the top covering (1) and the intermediate cladding layer (2) it Between；Described the first fiber waveguide (5) and the second fiber waveguide (6) is oppositely arranged, the first fiber waveguide (5) and the second fiber waveguide (6) phase To side to be tapered；Described the second fiber waveguide (6) and the opposite side of the first fiber waveguide (5) are also tapered end, its tip Mould field and single-mode fiber in mould field match；Described the first fiber waveguide (5) side opposite with the second fiber waveguide (6) is Rectangle.
- 2. Optical Waveguide Modes spot-size converter according to claim 1, it is characterised in that including：Described the first fiber waveguide (5) Tapered tip is not provided with setting groove on the substrate of the first fiber waveguide, is filled into by intermediate cladding layer after plane and makes the second light wave Lead (6).
- 3. Optical Waveguide Modes spot-size converter according to claim 1, it is characterised in that the top covering is silica, thickness Between 10-25um.
- 4. Optical Waveguide Modes spot-size converter according to claim 1, it is characterised in that first fiber waveguide is silicon, and thickness exists Below 500nm.
- 5. Optical Waveguide Modes spot-size converter according to claim 1, it is characterised in that the depth of groove 10-15um it Between.
- 6. Optical Waveguide Modes spot-size converter according to claim 1, it is characterised in that the intermediate cladding layer is silica, thick Degree is in below 500nm.
- 7. Optical Waveguide Modes spot-size converter according to claim 1, it is characterised in that second fiber waveguide is silicon nitride, thick Degree is in below 600nm.
- 8. Optical Waveguide Modes spot-size converter according to claim 1, it is characterised in that the insulator layer is silica, thick Degree is between 1-5um.
- 9. Optical Waveguide Modes spot-size converter according to claim 1, it is characterised in that the substrate is silicon.
- 10. a kind of preparation method of Optical Waveguide Modes spot-size converter, including step：(1) upper first fiber waveguide is made using integrated micro technique on insulator layer (3)；(2) on the tip of the first fiber waveguide, the substrate for not laying the first fiber waveguide, made using integrated micro technique recessed Groove；(3) depositing inter-layer silica is filled to groove, and whole chip is planarized, and controls intermediate layer dioxy The thickness of SiClx；(4) one layer of silicon nitride is being deposited obtained by step (3) on chip；(5) the second fiber waveguide is made using integrated micro technique on silicon nitride layer；(6) top covering silica is being deposited obtained by step (5) on chip.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108132499A (en) * | 2018-02-02 | 2018-06-08 | 苏州易缆微光电技术有限公司 | Silicon waveguide spot converter based on multilayer polymer structure and preparation method thereof |
| CN109407215A (en) * | 2018-11-15 | 2019-03-01 | 杭州芯耘光电科技有限公司 | A kind of coupling process of silicon based opto-electronics chip and single mode optical fiber |
| CN110658586A (en) * | 2019-11-19 | 2020-01-07 | 华进半导体封装先导技术研发中心有限公司 | End face coupler and preparation method thereof |
| CN111208607A (en) * | 2020-02-09 | 2020-05-29 | 浙江大学深圳研究院 | Method for manufacturing glass-based spot-size converter by grooved hot plate temperature gradient ion diffusion |
| CN111239898A (en) * | 2020-02-09 | 2020-06-05 | 浙江大学深圳研究院 | Method for manufacturing glass-based buried type spot-size converter by grooved hot plate temperature gradient ion diffusion |
| CN112558222A (en) * | 2020-12-16 | 2021-03-26 | 联合微电子中心有限责任公司 | Method for manufacturing end-face coupler |
| CN112630886A (en) * | 2020-12-22 | 2021-04-09 | 联合微电子中心有限责任公司 | End-face coupler and manufacturing method thereof |
| WO2021108967A1 (en) * | 2019-12-02 | 2021-06-10 | 华为技术有限公司 | Spot size converter and preparation method therefor, silicon optical device and optical communication device |
| CN113359234A (en) * | 2020-03-02 | 2021-09-07 | 苏州旭创科技有限公司 | Spot transformer and silicon optical integrated chip |
| CN113640925A (en) * | 2020-04-27 | 2021-11-12 | 格芯(美国)集成电路科技有限公司 | Edge coupler with stacked layers |
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| WO2021108967A1 (en) * | 2019-12-02 | 2021-06-10 | 华为技术有限公司 | Spot size converter and preparation method therefor, silicon optical device and optical communication device |
| CN111208607A (en) * | 2020-02-09 | 2020-05-29 | 浙江大学深圳研究院 | Method for manufacturing glass-based spot-size converter by grooved hot plate temperature gradient ion diffusion |
| CN111239898A (en) * | 2020-02-09 | 2020-06-05 | 浙江大学深圳研究院 | Method for manufacturing glass-based buried type spot-size converter by grooved hot plate temperature gradient ion diffusion |
| CN113359234A (en) * | 2020-03-02 | 2021-09-07 | 苏州旭创科技有限公司 | Spot transformer and silicon optical integrated chip |
| CN113640925A (en) * | 2020-04-27 | 2021-11-12 | 格芯(美国)集成电路科技有限公司 | Edge coupler with stacked layers |
| CN113640925B (en) * | 2020-04-27 | 2023-04-14 | 格芯(美国)集成电路科技有限公司 | Edge coupler with stacked layers |
| CN112558222A (en) * | 2020-12-16 | 2021-03-26 | 联合微电子中心有限责任公司 | Method for manufacturing end-face coupler |
| WO2022135095A1 (en) * | 2020-12-22 | 2022-06-30 | 联合微电子中心有限责任公司 | End face coupler and manufacturing method therefor |
| CN112630886A (en) * | 2020-12-22 | 2021-04-09 | 联合微电子中心有限责任公司 | End-face coupler and manufacturing method thereof |
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